CN105702625B - 柔性基板的剥离方法 - Google Patents
柔性基板的剥离方法 Download PDFInfo
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Abstract
本发明提供一种柔性基板的剥离方法,包括:提供一多孔金属基板;在多孔金属基板上形成缓冲层;在所述缓冲层上形成柔性基板;将柔性基板放入电解槽中,使多孔金属基板部分浸入电解液中,将多孔金属基板作为阴极,通电对电解液中的水进行电解,多孔金属基板上会释放出氢气,在氢气的作用力下将柔性基板和缓冲层从多孔金属基板上剥离,得到底部留有缓冲层的柔性基板,该方法高效、无损伤,可提高柔性基板的生产良率;剥离柔性基板的速度较快,保证柔性基板上的器件在剥离过程中不会受到影响;另外,多孔金属基板可以重复使用,从而降低生产成本。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种柔性基板的剥离方法。
背景技术
随着科技的不断更新与发展,采用柔性基板制成的可弯曲的柔性器件有望成为下一代光电子器件的主流设备,如显示器、芯片、电路、电源、传感器等柔性器件可以实现传统光电子器件所不能实现的功能,在成本和用户体验方面具有较大优势。以柔性显示为例,它是一种在柔性材料构成的基板表面制备器件的方法,如柔性有源矩阵有机发光二极体(Active-matrix organic light emitting diode,AMOLED),需要在刚性基板表面先制备或吸附柔性基板,继而进行器件制备,最后再将柔性基板从刚性基板上剥离。因此,如何将柔性基板与刚性基板有效剥离是生产柔性器件的关键技术之一。
目前主流的柔性显示器件的剥离方式是采用激光烧蚀的方式进行,即在聚合物柔性基板和刚性玻璃基板的界面施加高强度的激光,烧蚀界面层的聚合物,从而实现柔性和刚性基板的剥离。虽然这种方式可以实现量产,但是激光的扫描尺寸直接限制了量产的速率,而且产生的热能可能会对柔性显示膜造成较大的损坏,因此这种方式很难应用于大尺寸的柔性显示器的制备。值得一提的是,激光烧蚀的设备不仅操作复杂,而且设备昂贵,造成成本负担。为了提高产品的良率和降低成本,开发出温和易操作且成本低廉的方法迫在眉睫。
现阶段显示行业的多家公司和科研机构就此技术提出了不同的解决方案,如LG采用化学法腐蚀不锈钢衬底的方法实现柔性基板与刚性基板的剥离,但是腐蚀不锈钢的化学药液对柔性器件亦有腐蚀作用,导致柔性显示器的寿命大打折扣。三星则采用电阻加热感脱离技术,其使用加热的方法使基板与玻璃脱离,但是过高的温度需要增加制程对发光器件进行保护,造成良率和成本都得不到保障。TCL华星光电采用在柔性基板和刚性基板之间嵌入第二刚性基板,保证第二刚性基板的面积小于刚性基板和柔性基板,然后沿着第二刚性基板进行切割,温和有效地实现柔性基板和刚性基板的剥离,该方法虽然实现了柔性基板和刚性基板的分离,但是分离柔性基板和第二刚性基板会面临同样的剥离问题,而且容易造成柔性基板的损伤。
因此,有必要提供一种柔性基板的剥离方法,以解决上述问题。
发明内容
本发明的目的在于提供一种柔性基板的剥离方法,高效、无损伤,可提高柔性基板的生产良率,降低生产成本。
为实现上述目的,本发明提供一种柔性基板的剥离方法,包括如下步骤:
步骤1、提供一多孔金属基板,所述多孔金属基板为内部具有多个孔洞的金属板,在所述多孔金属基板上形成缓冲层;
步骤2、在所述缓冲层上形成柔性基板;
步骤3、提供一电解装置,所述电解装置包括一电解槽、及设于电解槽内的阳极;
步骤4、在所述电解装置的电解槽内加入电解液;
将所述步骤2制得的包括柔性基板、缓冲层、及多孔金属基板的多层板以多孔金属基板朝下的方式放入所述电解槽中,使多孔金属基板与电解液相接触,以所述多孔金属基板为阴极,在所述多孔金属基板与阳极之间接入电源,对电解液中的水进行电解,位于所述多孔金属基板附近以及进入所述多孔金属基板内部孔洞中的水被电解后产生氢气,所述氢气对所述缓冲层施加作用力,将所述缓冲层从所述多孔金属基板上剥离,得到底部留有缓冲层的柔性基板。
所述多孔金属基板的材料为铁、镍、或铜。
所述缓冲层的材料为氧化硅层、氮化硅层、或者由氧化硅层与氮化硅层叠加构成的复合层。
所述步骤1采用化学气相沉积方法形成所述缓冲层。
所述柔性基板的材料为有机聚合物。
所述有机聚合物为聚酰亚胺。
所述步骤2还包括:在所述柔性基板上制作器件。
所述电解装置的阳极的材料为碳、铂、或金。
所述步骤4中,所述多孔金属基板上远离所述柔性基板的一侧浸入电解液中,接近所述柔性基板的一侧暴露于电解液之外。
所述步骤4中,所述电解液为硫酸溶液、氢氧化钠溶液、硫酸钠溶液、硝酸钾溶液、或者水。
本发明的有益效果:本发明提供的一种柔性基板的剥离方法,包括:提供一多孔金属基板;在多孔金属基板上形成缓冲层;在所述缓冲层上形成柔性基板;将柔性基板放入电解槽中,使多孔金属基板部分浸入电解液中,将多孔金属基板作为阴极,通电对电解液中的水进行电解,多孔金属基板上会释放出氢气,在氢气的作用力下将柔性基板和缓冲层从多孔金属基板上剥离,得到底部留有缓冲层的柔性基板,该方法高效、无损伤,可提高柔性基板的生产良率;剥离柔性基板的速度较快,保证柔性基板上的器件在剥离过程中不会受到影响;另外,多孔金属基板可以重复使用,从而降低生产成本。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为本发明的柔性基板的剥离方法的示意流程图;
图2为本发明的柔性基板的剥离方法的步骤1的示意图;
图3为本发明的柔性基板的剥离方法的步骤2的示意图;
图4为本发明的柔性基板的剥离方法的步骤3的示意图;
图5-6为本发明的柔性基板的剥离方法的步骤4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1,本发明提供一种柔性基板的剥离方法,包括如下步骤:
步骤1、如图2所示,提供一多孔金属基板10,所述多孔金属基板10为内部具有多个细小孔洞的金属板,在所述多孔金属基板10上形成缓冲层20。
具体的,所述多孔金属基板10的材料可以为铁(Fe)、镍(Ni)、或铜(Cu)。
具体的,所述缓冲层20的材料为氧化硅(SiOx)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体的,所述步骤1采用化学气相沉积方法形成所述缓冲层20。
具体的,所述步骤1通过在多孔金属基板10上形成缓冲层20,可以防止后期热制程中多孔金属板10影响柔性基板底部的平整度。
步骤2、如图3所示,在所述缓冲层20上形成柔性基板30。
具体的,所述柔性基板30的材料为有机聚合物,如聚酰亚胺(PI)。
进一步的,所述步骤2还包括:在所述柔性基板30上制作器件40。
具体的,所述器件40包括常规OLED结构中的薄膜晶体管结构及发光器件结构,该发光器件结构包括电极层、发光层等,本实施例中器件40的内部结构属于现有技术范畴,这里不再具体说明。
步骤3、如图4所示,提供一电解装置50,所述电解装置50包括一电解槽51、及设于电解槽51内的阳极53。
具体的,所述阳极53的材料可以为金属氧化物、活泼性能比所述多孔金属基板10的材料差的金属、或者碳元素;优选的,所述阳极53的材料为碳(C)、铂(Pt)、或金(Au)。
步骤4、在所述电解装置50的电解槽51内加入电解液;
将所述步骤2制得的包括柔性基板30、缓冲层20、及多孔金属基板10的多层板以多孔金属基板10朝下的方式放入所述电解槽51中,使多孔金属基板10与电解液相接触,以所述多孔金属基板10为阴极,在所述多孔金属基板10与阳极53之间接入电源(未图示),对电解液中的水进行电解,位于所述多孔金属基板10附近以及进入所述多孔金属基板10内部孔洞中的水被电解后产生氢气(H2),所述氢气对所述缓冲层20施加作用力,将所述缓冲层20从所述多孔金属基板10上剥离(如图5所示),得到底部留有缓冲层20的柔性基板30(如图6所示)。
具体的,所述步骤4中,所述多孔金属基板10上远离所述柔性基板30的一侧浸入电解液中,接近所述柔性基板30的一侧暴露于电解液之外。
具体的,所述步骤4中,所述电解液为硫酸溶液、氢氧化钠溶液、硫酸钠溶液、硝酸钾溶液、或者水。
具体的,所述步骤4中,电解水的反应式为:2H2O=O2↑+2H2↑;
其中,阴极(即多孔金属基板10)的反应式为:2H2O+2e-=H2↑+2OH-;
阳极53的反应式为:2H2O-4e-=O2↑+4H+。
综上所述,本发明提供的一种柔性基板的剥离方法,包括:提供一多孔金属基板;在多孔金属基板上形成缓冲层;在所述缓冲层上形成柔性基板;将柔性基板放入电解槽中,使多孔金属基板部分浸入电解液中,将多孔金属基板作为阴极,通电对电解液中的水进行电解,多孔金属基板上会释放出氢气,在氢气的作用力下将柔性基板和缓冲层从多孔金属基板上剥离,得到底部留有缓冲层的柔性基板,该方法高效、无损伤,可提高柔性基板的生产良率;剥离柔性基板的速度较快,保证柔性基板上的器件在剥离过程中不会受到影响;另外,多孔金属基板可以重复使用,从而降低生产成本。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (9)
1.一种柔性基板的剥离方法,其特征在于,包括如下步骤:
步骤1、提供一多孔金属基板(10),所述多孔金属基板(10)为内部具有多个孔洞的金属板,在所述多孔金属基板(10)上形成缓冲层(20);
步骤2、在所述缓冲层(20)上形成柔性基板(30);
步骤3、提供一电解装置(50),所述电解装置(50)包括一电解槽(51)、及设于电解槽(51)内的阳极(53);
步骤4、在所述电解装置(50)的电解槽(51)内加入电解液;
将所述步骤2制得的包括柔性基板(30)、缓冲层(20)、及多孔金属基板(10)的多层板以多孔金属基板(10)朝下的方式放入所述电解槽(51)中,使多孔金属基板(10)与电解液相接触,以所述多孔金属基板(10)为阴极,在所述多孔金属基板(10)与阳极(53)之间接入电源,对电解液中的水进行电解,位于所述多孔金属基板(10)附近以及进入所述多孔金属基板(10)内部孔洞中的水被电解后产生氢气,所述氢气对所述缓冲层(20)施加作用力,将所述缓冲层(20)从所述多孔金属基板(10)上剥离,得到底部留有缓冲层(20)的柔性基板(30);
所述步骤4中,所述多孔金属基板(10)上远离所述柔性基板(30)的一侧浸入电解液中,接近所述柔性基板(30)的一侧暴露于电解液之外。
2.如权利要求1所述的柔性基板的剥离方法,其特征在于,所述多孔金属基板(10)的材料为铁、镍、或铜。
3.如权利要求1所述的柔性基板的剥离方法,其特征在于,所述缓冲层(20)的材料为氧化硅层、氮化硅层、或者由氧化硅层与氮化硅层叠加构成的复合层。
4.如权利要求3所述的柔性基板的剥离方法,其特征在于,所述步骤1采用化学气相沉积方法形成所述缓冲层(20)。
5.如权利要求1所述的柔性基板的剥离方法,其特征在于,所述柔性基板(30)的材料为有机聚合物。
6.如权利要求5所述的柔性基板的剥离方法,其特征在于,所述有机聚合物为聚酰亚胺。
7.如权利要求1所述的柔性基板的剥离方法,其特征在于,所述步骤2还包括:在所述柔性基板(30)上制作器件(40)。
8.如权利要求1所述的柔性基板的剥离方法,其特征在于,所述电解装置(50)的阳极(53)的材料为碳、铂、或金。
9.如权利要求1所述的柔性基板的剥离方法,其特征在于,所述步骤4中,所述电解液为硫酸溶液、氢氧化钠溶液、硫酸钠溶液、硝酸钾溶液、或者水。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1885111A (zh) * | 2005-06-25 | 2006-12-27 | Lg.菲利浦Lcd株式会社 | 用于转移基板的方法和使用该方法制造柔性显示器的方法 |
CN102769109A (zh) * | 2012-07-05 | 2012-11-07 | 青岛海信电器股份有限公司 | 柔性显示器的制作方法以及制作柔性显示器的基板 |
CN103325734A (zh) * | 2013-04-08 | 2013-09-25 | 友达光电股份有限公司 | 可挠性基板的分离方法与可挠性基板结构 |
CN105428312A (zh) * | 2015-11-18 | 2016-03-23 | 上海大学 | 柔性衬底的制备和分离方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4988674A (en) * | 1989-02-09 | 1991-01-29 | Eastman Kodak Company | Electrically conductive articles and processes for their fabrication |
JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
JP4884592B2 (ja) * | 2000-03-15 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法及び表示装置の作製方法 |
TWI288493B (en) * | 2005-09-13 | 2007-10-11 | Ind Tech Res Inst | Method for fabricating a device with flexible substrate and method for stripping flexible-substrate |
KR100889978B1 (ko) * | 2007-10-12 | 2009-03-25 | 전남대학교산학협력단 | 반도체 영역의 선택적 식각방법, 반도체층의 분리방법 및반도체소자를 기판으로부터 분리하는 방법 |
KR101824425B1 (ko) * | 2008-12-17 | 2018-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
CN103700662B (zh) * | 2013-12-09 | 2017-02-15 | 京东方科技集团股份有限公司 | 一种承载基板和柔性显示器件制作方法 |
CN106029596A (zh) * | 2014-01-31 | 2016-10-12 | 洛克希德马丁公司 | 采用多孔非牺牲性支撑层的二维材料形成复合结构的方法 |
JP6271454B2 (ja) * | 2015-02-16 | 2018-01-31 | 日本電信電話株式会社 | 機能性材料の転写方法 |
CN105137634A (zh) * | 2015-08-05 | 2015-12-09 | 深圳市华星光电技术有限公司 | 柔性显示面板的制作方法以及用于其制作的基板组件 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1885111A (zh) * | 2005-06-25 | 2006-12-27 | Lg.菲利浦Lcd株式会社 | 用于转移基板的方法和使用该方法制造柔性显示器的方法 |
CN102769109A (zh) * | 2012-07-05 | 2012-11-07 | 青岛海信电器股份有限公司 | 柔性显示器的制作方法以及制作柔性显示器的基板 |
CN103325734A (zh) * | 2013-04-08 | 2013-09-25 | 友达光电股份有限公司 | 可挠性基板的分离方法与可挠性基板结构 |
CN105428312A (zh) * | 2015-11-18 | 2016-03-23 | 上海大学 | 柔性衬底的制备和分离方法 |
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