CN105684142B - 半导体封装件的制造方法以及半导体封装件 - Google Patents

半导体封装件的制造方法以及半导体封装件 Download PDF

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CN105684142B
CN105684142B CN201480003328.7A CN201480003328A CN105684142B CN 105684142 B CN105684142 B CN 105684142B CN 201480003328 A CN201480003328 A CN 201480003328A CN 105684142 B CN105684142 B CN 105684142B
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semiconductor element
potting resin
bonding pad
chip bonding
area
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CN105684142A (zh
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见泽有市
长瀬健男
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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Abstract

在半导体封装件中，芯片焊盘，半导体元件，连接构件以及引线的表面通过硅烷耦合剂被进行表面处理，半导体元件的表面中接合有连接构件的半导体元件的一面含有露出有机物的第一区域，和露出无机物的第二区域，第一区域与封装树脂之间的接合强度比第二区域与封装树脂之间的接合强度弱。

Description

半导体封装件的制造方法以及半导体封装件
技术领域
本发明涉及一种半导体封装件(Package)的制造方法以及半导体封装件。
背景技术
已知一种在将半导体元件接合在芯片焊盘(Die Pad)上，且在将半导体元件与引线(Lead)通过连接构件连接的状态下，用封装树脂将半导体元件，引线，连接构件以及芯片焊盘封装的树脂封装型半导体封装件(参照专利文献一～五)。
芯片焊盘由金属形成，其与封装树脂之间的粘合力低。因此，芯片焊盘与封装树脂之间容易产生剥离。在芯片焊盘与封装树脂剥离的状态下，当进行半导体封装件的可靠性试验(温度循环(Cycle)试验，断续工作试验等的环境试验)时，芯片焊盘以及封装树脂等会由于外部热量或者半导体元件的自身热量而产生热膨胀。因此，根据芯片焊盘与封装树脂的热膨胀系数的差异，芯片焊盘与封装树脂进行相对移动，导致将半导体元件与芯片焊盘进行接合的接合构件可能产生断裂(Crack)。一旦接合构件产生断裂，便导致半导体元件与芯片焊盘之间的电阻升高。另外，半导体元件的散热性也会变差。
在专利文献一中，通过在芯片焊盘的上表面实施表面粗化处理，提升芯片焊盘与封装树脂之间的粘合力，从而抑制上述问题。在专利文献一中，在芯片焊盘的上表面实施表面粗化处理之后，将半导体元件接合在芯片焊盘的上表面。然后，在将半导体元件与引线通过连接构件连接之后，用封装树脂进行封装。在该方法中，封装树脂被充填在芯片焊盘的上表面的凹凸部中，封装树脂与凹凸部物理嵌合。因此，便能够抑制芯片焊盘与封装树脂的相对移动。
然而，在该方法中，由于芯片焊盘与封装树脂之间的粘合力是通过芯片焊盘与封装树脂嵌合这样的物理作用而产生的，因此粘合力并不足够。另外，在专利文献一中，并没有提及封装树脂与半导体元件之间的粘合力。通常，由于半导体元件的表面是由半导体的氧化膜或者电极等无机物构成，因此封装树脂与半导体元件之间的粘合力很弱。因此，当对半导体封装件进行上述可靠性试验时，根据半导体元件与封装树脂的热膨胀系数的差异，封装树脂与半导体元件进行相对移动，导致将半导体元件与芯片焊盘进行接合的接合构件可能产生断裂。
与此相对，已知一种硅烷偶联剂(Silane Coupling)，作为提升无机物(金属)与有机物(树脂)之间的粘合力的技术。硅烷交联是一种通过将金属与树脂化学接合，从而提升金属与树脂之间的粘合力的技术。在专利文献二中，在将装载有半导体封装件的树脂基板与由金属形成的散热基板进行接合时，将硅烷偶联剂涂布在散热基板的表面，提升两者的粘合力。在专利文献三～五中，公开了一种在将半导体元件安装到表面被硅烷偶联剂处理过的引线框架(Lead Frame)上后，用封装树脂对半导体元件以及引线进行封装的技术。
然而，在该方法中，为了使硅烷偶联剂不会阻碍芯片焊盘与接合构件之间的粘合力，必须在装载半导体元件的区域实施掩膜(Masking)处理。另外，虽然芯片焊盘与封装树脂之间的粘合力提升，但是封装树脂与半导体元件之间的粘合力依然还有待改善。
与此相对，对封装树脂与半导体元件之间的粘合力提升这一方法在对提升半导体封装件的电气特性方面未必会产生理想的效果。例如，当半导体元件与封装树脂牢固地粘合，在进行可靠性试验时，根据半导体元件与封装树脂的热膨胀系数的差异，在半导体元件与封装树脂的界面中会产生很大的应力。在半导体元件中，形成有用于形成电气电路的多个层，当在半导体元件与封装树脂的界面中会产生很大的应力时，在各个层中产生断裂，或者在各个层之间产生剥离，可能会对半导体元件的电气特性造成影响。
先行技术文献
专利文献
【专利文献一】日本特开2011-82389号公报
【专利文献二】日本特开2005-226096号公报
【专利文献三】日本特开2005-340474号公报
【专利文献四】日本特开2005-072306号公报
【专利文献五】日本特开平08-078561号公报
发明内容
本发明的目的是提供一种提升芯片焊盘以及半导体元件与封装树脂之间的粘合力，且半导体元件的电气特性出色的半导体封装件的制造方法以及半导体封装件。
本发明的一个形态所涉及的半导体封装件的制造方法，依次包括：将半导体元件接合在芯片焊盘的上表面的装载工序，将所述半导体元件与引线通过连接构件进行电连接的连接工序，将所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线的表面通过硅烷偶联剂进行表面处理的表面处理工序，以及将所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线用封装树脂进行封装的封装工序，在所述半导体元件的表面中接合有所述连接构件的所述半导体元件的第一表面含有露出有机物的第一区域，和露出无机物的第二区域，所述第一区域与所述封装树脂之间的接合强度比所述第二区域与所述封装树脂之间的接合强度更弱。
本发明的一个形态所涉及的半导体封装件，包括：芯片焊盘，被接合在所述芯片焊盘的上表面的半导体元件，引线，将所述半导体元件与所述引线进行连接的连接构件，将所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线进行封装的封装树脂，所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线的表面由硅烷偶联剂进行表面处理，所述半导体元件的表面中接合有所述连接构件的所述半导体元件的所述第一表面含有露出有机物的第一区域，和露出无机物的第二区域，所述第一区域与所述封装树脂之间的接合强度比所述第二区域与所述封装树脂之间的接合强度更弱。
【发明效果】
根据本发明，由于从半导体元件的安装或者引线的连接完成之后采用硅烷偶联剂进行表面处理，因此不仅能够提升芯片焊盘与封装树脂之间的接合强度，还能够提升半导体元件与封装树脂之间的接合强度。另外，在露出有机物的第一区域中，相比于露出无机物的第二区域，由于硅烷偶联剂的羟基末端难以结合，因此封装树脂与第一区域之间的接合强度比封装树脂与第二区域之间的接合强度更弱。因此，当从半导体元件外部的加热或者半导体元件自身的发热所引起的热膨胀产生时，根据半导体元件与封装树脂的热膨胀系数的差异，能够将在半导体元件的第二区域与封装树脂的界面中产生的应力在与第一区域相对应的半导体元件或者封装树脂的部分中进行缓和。因此，能够对在形成在半导体元件的第一表面侧的用于形成电气电路的各个层中产生断裂，或者在各个层之间产生剥离的情况进行抑制，且能够抑制对半导体元件的电气特性造成影响。因此，能够提供一种提升芯片焊盘以及半导体元件与封装树脂之间的粘合力，且半导体元件的电气特性出色的半导体封装件的制造方法以及半导体封装件。
【简单附图说明】
【图1】是显示第一实施方式涉及的半导体封装件的结构的俯视平面图。
【图2】是显示第一实施方式涉及的半导体封装件的结构的侧面图。
【图3】是将半导体元件从形成有第一电极以及第二电极的第一表面侧观看的俯视平面图。
【图4】是图1中A-A'的截面图。
【图5】是显示第一实施方式涉及的制造方法的流程(Flow)图。
【图6】是显示在喷雾工序中喷雾硅烷偶联剂的区域以及涂布有硅烷偶联剂的表面的图。
【图7】是显示第二实施方式涉及的半导体封装件的结构的侧面图。
发明实施方式
[第一实施方式]
(半导体封装件)
以下，将参照图1至图4，对本实施方式涉及的半导体封装件30进行说明。如图1以及图2所示，本实施方式涉及的半导体封装件30包括：芯片焊盘11，半导体元件31，引线12，悬吊引线(Suspension Lead)部15，连接构件32以及封装树脂33。
芯片焊盘11是用于装载半导体元件31平板状的构件。如图2所示，芯片焊盘11具有：第一主表面1101，第一主表面1101的相反侧第二主表面(上表面)1102。
半导体元件31是采用焊锡或者银膏(Paste)等的接合构件41与芯片焊盘11的第二主表面1102相接合。
半导体元件31包含基材部311。基材部311是平面上看呈矩形板状的半导体。基材部311例如是由硅(Silicon)形成的。在基材部311的表面形成有是无机物的半导体的氧化膜，例如是由硅氧化膜(SiO2)形成的。如图4所示，基材部311具有：第一主表面3111，第一主表面3111的相反侧第二主表面(上表面)3112。第二主表面3112与芯片焊盘11的第二主表面1102对向。
如图3以及图4所示，半导体元件31包含保护环(Guard Ring)341。保护环341被形成为环(Loop)状。保护环341例如是由铝(Aluminium)形成的。保护环341被设置在基材部311的第一主表面3111上。保护环341被设为用于保护半导体元件31以防止在进行划片(Scribing)时所产生的断裂。在保护环341的表面形成有绝缘层342。绝缘层342是例如当在保护环341的表面形成TEOS(四乙氧基硅烷(Tetraethoxy Silane))层之后，通过将有机物的层在TEOS层上进行层积从而被制备。有机物例如是聚酰亚胺(Polyimide)。绝缘层342的表面是由有机物构成的。
半导体元件31包含电极部312。电极部312被设为用于连接半导体元件31与引线12，且是板状的金属构件。电极部312被设置在基材部311的第一主表面3111中，在平面上看被设在由保护环341包围的部分中。
电极部312由金属构成。电极部312例如是由铝形成的。在电极部312的表面上形成有金属氧化物，例如是氧化铝(Al2O3)膜。电极部312例如是包含第一电极3121，第二电极3122。
以下，将在半导体元件31的表面中，接合有连接构件32的半导体31的表面称为第一表面3101。第一表面3101在半导体元件31中的第一主表面3111侧的最外层的表面。在第一表面3101中，包含基材部311的第一主表面3111，绝缘层342的表面以及电极部312的表面。基材部311的表面由半导体或者半导体的氧化膜等的无机物构成，绝缘层342的表面由含聚酰亚胺等的有机物的有机膜构成，电极部312的表面由金属或者金属氧化物等的无机物构成。因此，第一表面3101含有露出有机物的第一区域34，露出无机物的第二区域35。
第一区域34含有绝缘层342的表面。第二区域35包含电极部312的表面，基材部311的第一主表面3111。另外，在电极部312的表面存在被形成有机膜部分亦可。在该情况下，第一区域34包含被设在电极部312上的有机物的表面。电极部312的表面的至少一部分被包含在第二区域35中。
如图1及图2所示，连接构件32例如是键合线(Bonding Wire)。键合线与电极部312为相同的无机物，例如是由铝形成的。连接构件32包含第一连接构件321a，第二连接构件322a。
第一连接构件321a通过引线键合(Wire Bonding)被接合在被包含在第一电极3121的第二区域35部分的表面上。第二连接构件322a通过引线键合被接合在被包含在第二电极3122的第二区域35部分的表面上。
如图2以及图4所示，半导体元件31包含第三电极313。第三电极313被形成在基材部311的第二主表面3112上。半导体元件31例如是双极型晶体管(Bipolar Transistor)，第一电极3121是栅极(Gate)电极，第二电极3122是源极(Source)电极，第三电极313是漏极(Drain)电极。
引线12包含第一端部17，第二端部18。在第一端部17上连接有连接构件32。在引线12的第一端部17上例如实施镀镍(Nickel)。
引线12在平面上看到的芯片焊盘11的一端侧上配有间隔。引线12被形成为沿着芯片焊盘11的主表面1101,1102往远离芯片焊盘11的一端的方向延伸。在引线12的长度方向的两端部中，与芯片焊盘11相邻接的端部是第一端部17。远离芯片焊盘11而设置的端部是第二端部18。
回到图1，悬吊引线部15从芯片焊盘11的一端往引线12的长度方向延伸。悬吊引线部15例如是地线。悬吊引线部15经由芯片焊盘11与第三电极313电连接。
芯片焊盘11，引线12，以及悬吊引线部15通过封装树脂33被封装。引线12的第一端部17通过封装树脂33被封装。引线12的第二端部18从封装树脂33起延伸。另外，芯片焊盘11的第一主表面1101露出在封装树脂33的外部。
在封装树脂33中含有硅烷偶联剂。被包含在封装树脂33中的硅烷偶联剂例如是作为硬化封装树脂33时的硬化促进剂，或者是作为提升封装树脂33与芯片焊盘11以及半导体元件31的粘着性的粘着性增强剂发挥作用。另外，封装树脂33所含有的硅烷偶联剂例如是被用作于与后述的被用于表面处理的硅烷偶联剂不同的硅烷偶联剂，亦可是与被用于表面处理的硅烷偶联剂相同的硅烷偶联剂。
芯片焊盘11，半导体元件31，连接构件32，引线12，以及悬吊引线部15的表面在半导体元件被接合在芯片焊盘上，同时半导体元件以及引线通过连接构件被连接的状态下，通过硅烷偶联剂被进行表面处理，从而与封装树脂33之间的接合强度被提升。硅烷偶联剂的分子具有末端与有机材料化学结合的第一官能基以及末端与无机材料化学结合的第二官能基这两种官能基结合成硅原子的结构。第二官能基例如是通过水解作用将无机材料表面的羟基脱水缩合，从而与无机材料结合。因此，采用硅烷偶联剂能够使有机材料封装树脂33与无机材料芯片焊盘11等结合。能够使用公知的3-巯丙基三甲氧基硅烷(Mercaptopropyltrimethoxysilane)或者3-丙烯酰氧基丙基三甲氧基硅烷(Acryloxypropyltrimethoxysilane)。
(制造方法)
以下，将主要参照图5以及图6，对本实施方式涉及的制造方法进行说明。
在对半导体封装件30进行制造时，准备如图1所示的具有芯片焊盘11，引线12以及悬吊引线部15的引线框架。引线框架还包含将芯片焊盘11以及多个引线12一体连结的连结框架部(省略图示)。引线框架是通过例如对像铜板材那样具有导电性的板材实施冲压(Press)加工而得到的。
在本实施方式的制造方法中，将悬吊引线部15弯折，从而将芯片焊盘11在其厚度方向上相对于引线12错开。通过这样，引线12相比于芯片焊盘11的第二主表面1102位于更上方的位置(参照图2)。(装载工序S1)
如图5所示，在本实施方式的半导体封装件30的制造方法中，首先，将半导体元件31装载到芯片焊盘11的第二主表面(上表面)1102上(参照图1以及图2)。
如图1以及图2所示，在装载工序S1中，将半导体元件31装载到芯片焊盘11的第二主表面(上表面)1102上。半导体元件31被装载为基材部311的第二主表面3112与芯片焊盘11的第二主表面1102对向。将被形成在半导体元件31的第一表面3101的相反侧的面第二面3102的第三电极313，通过焊锡或者银膏等的接合构件41与芯片焊盘11的第二主表面1102相接合。采用焊锡的接合例如通过回流焊(Reflow)的方式进行。通过接合构件，第三电极313与芯片焊盘11电连接。
(连接工序S2)
接着，如图5所示，将半导体元件31与引线12通过接合构件32进行电连接。在连接工序中，将接合构件32的两端，半导体元件31以及引线12相连接(参照图1以及图2)。
在连接工序S2中，如图1以及图2所示，通过第一键合线321a，将半导体元件31与第一引线121相连接。另外，通过第二键合线322a，将半导体元件31的第二电极3122与第二引线122相连接。
(表面处理工序S3)
接着，如图5所示，将芯片焊盘11，半导体元件31，连接构件32，引线12，以及悬吊引线部15的表面通过硅烷偶联剂进行表面处理(参照图1以及图2)。在表面处理工序S3中，例如是依次包括喷雾工序S31，加热工序S32。
在喷雾工序S31中，将以乙醇(Ethanol)，甲醇(Methanol)，异丙醇(IsoprepylAlcohol)等使硅烷偶联剂稀释从而到的溶液，例如从芯片焊盘11的第二主表面1102侧起向芯片焊盘11，半导体元件31，连接构件32，引线12，以及悬吊引线部15的表面进行喷雾。如图6A中虚线所示，喷雾区域是包含被封装树脂33(参照图1)封装的面的全部区域的区域A。于是，如图6B中粗线所示，在芯片焊盘11的表面，半导体元件31的基材部311的表面以及电极部312的表面，连接构件32的上侧表面，引线12的第一端部17，以及悬吊引线部15的上侧表面涂布硅烷偶联剂。通过此方法，能够不浪费且有效地对芯片焊盘11，半导体元件31，连接构件32，以及引线12的表面进行表面处理。
在本实施方式中，基材部311是由硅形成的。因此，基材部311的表面被形成二氧化硅(SiO2)膜。另外，电极部312是由铝形成的。因此，在电极部312的表面上形成有氧化铝(Al2O3)膜。
根据本实施方式的半导体模型(Module)，能够起到与第二实施方式同样的效果。
与此相对，相比于包含基材部311或者电极部312的第二区域35，在表面露出有机物的第一区域34中，羟基的末端露出数更少。因此，在第一区域34中，硅烷偶联剂的第二官能基难以结合。因此，封装树脂33与第一区域34之间的接合强度比封装树脂33与第二区域35之间的接合强度更弱。
在进行温度循环试验，断续工作试验等的可靠性试验时，半导体元件31由外部被加热，或者自身发热。通过产生的热量，半导体元件31或者封装树脂33进行热膨胀，根据热膨胀系数的差，在包含电极部312或者基材部311的第二区域35和与第二区域35牢固结合的封装树脂33之间的界面中产生了很大的应力。
与此相对，由于封装树脂33与第一区域34之间的接合强度比封装树脂33与第二区域35之间的接合强度更弱，因此在第一区域34和封装树脂33之间的界面中不会产生很大的应力。因此，在半导体元件31的第二区域35和封装树脂33之间的界面中产生的应力在与第一区域34相对应的半导体元件或者封装树脂的部分中进行缓和。因此，能够抑制应力对第二区域35的强力作用。
以下是通过形成第一区域34，从而在半导体元件31和封装树脂33之间的界面中所产生的应力得到缓和的结构。
当半导体元件31与封装树脂33被加热，半导体元件31与封装树脂分别进行热膨胀。通过热膨胀，半导体元件31与封装树脂33分别向与所述界面平行的方向进行热膨胀。半导体元件31与封装树脂33具有不同的热膨胀系数。因此，半导体元件31与封装树脂33的膨胀长度也不同。以下，假定半导体元件31具有比封装树脂33更大的热膨胀系数。封装树脂33的热膨胀系数更大的情况也是同样。
在半导体元件31与封装树脂33之间的接合强度大的情况下，膨胀长度更短的封装树脂33随着膨胀长度更长的半导体元件31朝着与所述界面平行的方向发生位移。因此，在所述界面近旁，封装树脂33受到与封装树脂33的位移量成正比的弹性力。位移量与半导体元件31与封装树脂33的膨胀长度的差成正比。因此，在所述界面近旁会产生应力。
半导体元件31与封装树脂33的膨胀长度与加热前的半导体元件31与封装树脂33的接合面的长度成正比。因此，半导体元件31与封装树脂33的接合面的长度越长，在所述界面近旁所产生的的应力越大。
在加热前的状态下，在半导体元件31与封装树脂33的接合面的一部分中形成第一区域34。在第一区域34中，由于半导体元件31与封装树脂33之间的接合强度弱，导致封装树脂33难以随着半导体元件31进行位移。因此，半导体元件31与封装树脂33的接合面的长度实质上变短。因此，能够使在所述界面近旁所产生的的应力变小。
以上是通过形成第一区域34从而应力被缓和的结构。
另外，由于基材部311以及电极部312与封装树脂之间的结合力很强，因此基材部311与电极部312不容易全部从封装树脂33上剥离。因此，能够不使半导体元件31与封装树脂33的之间的粘合力受到太大破损，便提升半导体元件31的电气特性。
另外，第一区域34与封装树脂33的之间的接合强度比电连接部的表面与封装树脂33的之间的接合强度更弱。通过这样，便能够保护与电极部312相接合的连接构件32不被剥离。通过这样，便能够提升半导体元件31与连接构件32的连接可靠性。
另外，在本实施方式中，第一区域34被形成为环状。通过该结构，根据半导体元件31与封装树脂33的热膨胀系数的差异而产生的应力即便朝向第一表面3101的面内任一方向，也能够将产生的应力在与第一区域34相对应的半导体元件或者封装树脂的部分中进行缓和。
另外，在接合构件41中，由于相比于在表面露出无机物的第二区域35或者芯片焊盘11的上表面，羟基的末端露出数更少，因此硅烷偶联剂的羟基末端难以结合。因此，封装树脂33与接合构件41之间的接合强度比封装树脂33与第二区域35之间的接合强度或者封装树脂33与芯片焊盘11之间的接合强度更弱。因此，能够将由半导体元件31或者芯片焊盘11与封装树脂33的热膨胀系数的差所产生的半导体元件31与芯片焊盘11之间的应力在接合构件41的表面进行缓和。通过这样，能够不使半导体元件31或者芯片焊盘11与封装树脂33的之间的粘合力受到太大破损，便抑制在接合构件41产生断裂的情况。因此，便能够提升半导体元件31的电气特性。
另外，形成基材部311的材料以及形成电极部312的材料不仅限定于上述组合。可以对半导体材料以及金属材料进行适当选择，另外，还可以通过根据材料的特性进行适当的表面处理，从而控制表面的羟基个数。因此，对于各种各样的材料的组合，能够使电极部312与封装树脂33之间的接合强度比基材部311与封装树脂33之间的接合强度更弱。
在加热工序S32中，对所述溶液喷雾后的引线框架进行加热。在加热工序S32中，例如在25℃～250℃(50℃～150℃更佳)的温度下对所述溶液喷雾后的引线框架进行加热。由于加热温度较低，硅烷偶联剂的脱水缩合反应在电极部中难以进行。因此，电极部312与封装树脂33之间的粘合力过强的情况便能够被抑制。
(封装工序S4)
接着，如图5所示，用封装树脂33将芯片焊盘11，半导体元件31，连接构件32，引线12，以及悬吊引线部15进行封装。在进行封装工序时，预先准备匹配于半导体封装件30的外侧形状而制作的成型模具(省略图示)。在封装工序S4中，将芯片焊盘11，半导体元件31，连接构件32，引线12，以及悬吊引线部15设置在成型模具中。之后，使封装树脂33在成型模具中浇注硬化。
在本实施方式中，在封装树脂33中含有硅烷偶联剂。通过该结构，由于被包含在封装树脂33中的硅烷偶联剂具有作为增粘剂的功能，因此能够使封装树脂33与芯片焊盘11以及半导体元件31的粘合力增大。另外，被包含在封装树脂33中的硅烷偶联剂有时会被用来作为使封装树脂33硬化时的硬化促进剂等，并非要求要与被用在表面处理工序S3中的硅烷偶联剂所发挥的功能一致。如果被包含在封装树脂33中的硅烷偶联剂与被用在表面处理工序S3中的硅烷偶联剂不同，可以分别根据所需的功能对硅烷偶联剂进行适当地选择。
通过以上的封装工序S4，除去悬吊引线部15的芯片焊盘侧的一端的连结框架部(省略图示)，以及引线12的第二端部18被配置在封装树脂33的外侧。
在封装工序S4之后，将除去悬吊引线部15的芯片焊盘侧的一端的连结框架部切除。另外，根据需要，在各个引线12的第二端部18中实施弯折加工。通过这样，便得到了图1以及图2所示的半导体封装件30。另外，在图示例中，露出第一主表面1101地形成封装树脂33，但将引线框架以及成型模具设计为第一主表面1101埋没在封装树脂33中亦可。
以上，对本发明的第一实施方式进行了说明。在本实施方式中，由于芯片焊盘11与半导体元件31的表面通过硅烷偶联剂被实行表面处理，因此不仅是芯片焊盘11与封装树脂33之间的粘合力，半导体元件31与封装树脂33之间的粘合力也得到提升。因此，即便进行温度循环试验等，半导体元件31与封装树脂33之间也难以产生剥离，便能够抑制在连接半导体元件31与芯片焊盘11的接合构件41中产生断裂。
另外，由于第一区域34与封装树脂33之间的粘合力比基材部311或者电极部312与封装树脂33之间的粘合力更弱，因此在进行可靠性试验时，在半导体元件31的第二区域35和封装树脂33之间的界面中产生的应力能够在与第一区域34相对应的半导体元件或者封装树脂的部分中进行缓和。因此，能够抑制产生在封装树脂33内部的应力对电极部312的强力作用。与此相对，由于基材部311以及电极部312与封装树脂33之间的结合力很强，因此基材部311与电极部312不容易全部从封装树脂33上剥离。因此，能够不使半导体元件31与封装树脂33的之间的粘合力受到太大破损，便提升半导体元件31的电气特性。
因此，根据本实施方式，能够提供一种芯片焊盘11以及半导体元件31与封装树脂33之间的粘合力高，且半导体元件31的电气特性出色的半导体封装件30。
[第二实施方式]
以下，将参照图7，对本实施方式涉及的半导体封装件30b进行说明。以下，对与图1至图6中相同的结构要素，用相同的符号表示而省略说明。
如图7所示，在本实施方式中，连接构件32不是键合线，而是卡夹式(Clip)接线端子。在这一点上，与第一实施方式不同。
卡夹式接线端子是长条板状的连接构件，是将导电性板材弯曲而形成的。卡夹式接线端子的一端的面经由焊锡或者银膏等的接合构件从而与引线12的第一端部17的面相接合。卡夹式接线端子的另一端的面经由焊锡或者银膏等的接合构件从而与电极部312的面相接合。
卡夹式接线端子例如是包含第一卡夹式接线端子(省略图示)和第二卡夹式接线端子322b。第一电极3121(参照图1以及图2)与第一卡夹式接线端子相连接。第二电极3122与第二卡夹式接线端子322b相连接。
本实施方式的半导体封装件30b通过与第一实施方式相同的方式被制造。根据本实施方式，能够起到与第一实施方式同样的效果。
以上，参照附图对本发明涉及的适用的实施方式的示例例进行了说明，但本发明并不仅限定于所涉及的示例。在上述示例中所示的各个结构构件的各种形状或者组合等仅为一个示例，在不脱离本发明的主旨的范围内，可以根据设计要求进行各种变更。
【实施例】
以下，将采用实施例对本发明进行更详细地说明。
不过本发明不仅被限定于以下所示的实施例。
【实施例】
采用封装树脂(环氧(epoxy)树脂)制造半导体封装件。在制造过程汇中进行上述表面处理工序。使用3-巯丙基三甲氧基硅烷作为进行喷雾的硅烷偶联剂。
对于如上述这样制造的半导体封装件的样品(Sample)，在预处理之后进行温度循环试验。预处理为依次进行以下三步处理。
(预处理一)Ta(周围温度)＝125℃，24小时
(预处理二)Ta＝85℃，RH(相对湿度)＝85％，168小时
(预处理三)IR回流焊(260℃，循环两次)
温度循环试验在以下条件下进行。
(条件)最低保存温度＝-55℃，最高保存温度＝150℃，循环1000次
在上述条件下，对各个数量相同的样品进行温度循环试验，且对半导体封装件的热电阻特性的变动进行评价。
【比较例】
对半导体封装件不进行上述表面处理而制造。其他制造条件与实施例相同。对比较例也实行与实施例相同的温度循环试验，也对其热电阻特性的变动进行评价。
【试验结果】
在实行了表面处理的实施例中，直到完成1000次循环时都没有产生不良品。与此相对，在没有实行表面处理的比较例中，在完成300次循环时已经产生不良品，在完成1000次循环时，在比较例中产生的不良品占全部样品的77％。
如以上所示，在实行了表面处理的实施例中，不会产生不良品，而在没有实行表面处理的比较例中，产生了不良品。
从该结果可知，采用本发明，能够在提升芯片焊盘以及半导体元件与封装树脂33之间的粘合力的同时，还能够提升半导体元件与连接构件之间的连接可靠性。
符号说明
11 芯片焊盘
12 引线
31 半导体元件
32 连接构件
33 封装树脂
30 半导体封装件
312 电极部
34 第一区域
35 第二区域
41 接合构件
S1 装载工序
S2 连接工序
S3 表面处理工序
S31 喷雾工序
S32 加热工序
S4 封装工序

Claims (11)

1.一种半导体封装件的制造方法，其特征在于，依次包括：
将半导体元件接合在芯片焊盘的上表面的装载工序，
将所述半导体元件与引线通过连接构件进行电连接的连接工序，将所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线的表面通过硅烷偶联剂进行表面处理的表面处理工序，以及
将所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线用封装树脂进行封装的封装工序，
其中，在所述半导体元件的表面中接合有所述连接构件的所述半导体元件的第一表面含有露出有机物的第一区域，和露出无机物的第二区域，
所述第一区域与所述封装树脂之间的接合强度比所述第二区域与所述封装树脂之间的接合强度更弱。
2.根据权利要求1所述的半导体封装件的制造方法，其特征在于：
其中，在所述半导体元件的所述第一表面上设有与所述连接构件电连接的电极部，
通过所述电极部与所述连接构件构成电连接部，
所述电连接部的表面由无机物构成，
所述第一区域与所述封装树脂之间的接合强度比述电连接部的表面与所述封装树脂之间的接合强度更弱。
3.根据权利要求1所述的半导体封装件的制造方法，其特征在于：
其中，在所述装载工序中，采用接合构件将所述芯片焊盘与所述半导体元件接合，
在所述表面处理工序中，通过所述过硅烷偶联剂对所述接合构件的表面进行表面处理，
所述第二区域与所述封装树脂之间的接合强度比所述接合构件与所述封装树脂之间的接合强度更强，
所述芯片焊盘的所述上表面与所述封装树脂之间的接合强度比所述接合构件与所述封装树脂之间的接合强度更强。
4.根据权利要求1～3中任意一项所述的半导体封装件的制造方法，其特征在于：
其中，所述表面处理工序依次包含：
将含有所述硅烷偶联剂的溶液向所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线的表面进行喷雾的喷雾工序，
将所述溶液进行加热的加热工序。
5.根据权利要求4所述的半导体封装件的制造方法，其特征在于：
其中，在所述加热工序中，在25℃～150℃的温度下对含有所述芯片焊盘以及所述引线的引线框架进行加热。
6.根据权利要求1～3中任意一项所述的半导体封装件的制造方法，其特征在于：
其中，在所述封装树脂中含有硅烷偶联剂。
7.一种半导体封装件，其特征在于，包括：
芯片焊盘，
被接合在所述芯片焊盘的上表面的半导体元件，
引线，
将所述半导体元件与所述引线进行连接的连接构件，以及
将所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线进行封装的封装树脂，
其中，所述芯片焊盘，所述半导体元件，所述连接构件以及所述引线的表面由硅烷偶联剂进行表面处理，
所述半导体元件的表面中接合有所述连接构件的所述半导体元件的第一表面含有露出有机物的第一区域，和露出无机物的第二区域，所述第一区域与所述封装树脂之间的接合强度比所述第二区域与所述封装树脂之间的接合强度更弱。
8.根据权利要求7所述的半导体封装件，其特征在于：
其中，在所述半导体元件的所述第一表面中，设有与所述连接构件电连接的电极部，
通过所述电极部与所述连接构件构成电连接部，
所述电连接部的表面由无机物构成，
所述第一区域与所述封装树脂之间的接合强度比所述电连接部与所述封装树脂之间的接合强度更弱。
9.根据权利要求7所述的半导体封装件，其特征在于：
其中，所述第一区域被形成为环状。
10.根据权利要求7～9中任一项所述的半导体封装件，其特征在于：
其中，所述芯片焊盘与所述半导体元件采用接合构件被接合，
所述接合构件所露出的表面由所述硅烷偶联剂进行表面处理，
所述第二区域与所述封装树脂之间的接合强度比所述接合构件与所述封装树脂之间的接合强度更强，
所述芯片焊盘的所述上表面与所述封装树脂之间的接合强度比所述接合构件与所述封装树脂之间的接合强度更强。
11.根据权利要求7～9中任一项所述的半导体封装件，其特征在于：
其中，在所述封装树脂中含有硅烷偶联剂。
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