WO2016051449A1 - 半導体パッケージの製造方法および半導体パッケージ - Google Patents
半導体パッケージの製造方法および半導体パッケージ Download PDFInfo
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- WO2016051449A1 WO2016051449A1 PCT/JP2014/075819 JP2014075819W WO2016051449A1 WO 2016051449 A1 WO2016051449 A1 WO 2016051449A1 JP 2014075819 W JP2014075819 W JP 2014075819W WO 2016051449 A1 WO2016051449 A1 WO 2016051449A1
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- sealing resin
- semiconductor element
- die pad
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- lead
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- H01L2924/201—Temperature ranges
- H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
Definitions
- the present invention relates to a semiconductor package manufacturing method and a semiconductor package.
- a resin-sealed semiconductor package in which a semiconductor element, a lead, a connecting member, and a die pad are sealed with a sealing resin in a state where the semiconductor element is bonded onto the die pad and the semiconductor element and the lead are connected by a connecting member.
- the die pad is made of metal and has low adhesion with the sealing resin. Therefore, peeling is likely to occur between the die pad and the sealing resin.
- the reliability test of semiconductor packages environmental tests such as temperature cycle test and intermittent operation test
- the die pad and the sealing resin are exposed to external heat and semiconductor elements. Thermal expansion due to self-heating. For this reason, there is a possibility that the die pad and the sealing resin move relative to each other based on the difference in thermal expansion coefficient between the die pad and the sealing resin, and a crack is generated in the bonding member that joins the semiconductor element and the die pad.
- a crack occurs in the bonding member, the electrical resistance between the semiconductor element and the die pad increases. Moreover, the heat dissipation of the semiconductor element also deteriorates.
- Patent Document 1 the above problem is suppressed by performing a roughening process on the upper surface of the die pad to increase the adhesion between the die pad and the sealing resin.
- a semiconductor element is bonded to the upper surface of the die pad.
- it seals with sealing resin.
- the sealing resin is filled in the uneven portion on the upper surface of the die pad, and the sealing resin and the uneven portion are physically engaged. Therefore, relative movement between the die pad and the sealing resin is suppressed.
- Patent Document 1 does not mention the adhesion between the sealing resin and the semiconductor element.
- the surface of a semiconductor element is made of an inorganic material such as a semiconductor oxide film or an electrode, the adhesion between the sealing resin and the semiconductor element is weak. For this reason, when the reliability test described above is performed on the semiconductor package, the sealing resin and the semiconductor element move relative to each other based on the difference in thermal expansion coefficient between the semiconductor element and the sealing resin, and the semiconductor element and the die pad. There is a possibility that cracks may occur in the joining member that joins.
- a silane coupling agent is known as a technique for increasing the adhesion between an inorganic substance (metal) and an organic substance (resin).
- a silane coupling agent is a technique for enhancing the adhesion between a metal and a resin by chemically bonding the metal and the resin.
- Patent Document 2 when a resin substrate on which a semiconductor package is mounted and a heat dissipation substrate formed of metal are bonded, a silane coupling agent is applied to the surface of the heat dissipation substrate to increase the adhesion between them.
- Patent Documents 3 to 5 disclose techniques for mounting a semiconductor element on a lead frame whose surface is treated with a silane coupling agent and then sealing the semiconductor element and the lead with a sealing resin.
- increasing the adhesion between the sealing resin and the semiconductor element may not always produce a favorable effect in improving the electrical characteristics of the semiconductor package.
- the semiconductor element and the sealing resin are in close contact with each other, when the reliability test is performed, the semiconductor element and the sealing resin are based on the difference in thermal expansion coefficient between the semiconductor element and the sealing resin.
- a large stress is generated at the interface.
- a plurality of layers for forming an electric circuit are formed in a semiconductor element.
- cracks are generated in each layer, or between the layers. Separation may occur, which may affect the electrical characteristics of the semiconductor element.
- An object of the present invention is to provide a method for manufacturing a semiconductor package and a semiconductor package, which have high adhesion between a die pad and a semiconductor element and a sealing resin and are excellent in electrical characteristics of the semiconductor element.
- a manufacturing method of a semiconductor package includes a mounting step of bonding a semiconductor element to an upper surface of a die pad, a connecting step of electrically connecting the semiconductor element and a lead by a connecting member, the die pad, and the semiconductor element A surface treatment step of surface-treating the surfaces of the connection member and the lead with a silane coupling agent; and a sealing step of sealing the die pad, the semiconductor element, the connection member, and the lead with a sealing resin.
- the first surface of the semiconductor element to which the connecting member is bonded out of the surface of the semiconductor element includes a first region where the organic matter is exposed and a second region where the inorganic matter is exposed.
- the bonding strength between the first region and the sealing resin is weaker than the bonding strength between the second region and the sealing resin.
- a semiconductor package includes a die pad, a semiconductor element bonded to an upper surface of the die pad, a lead, a connecting member that connects the semiconductor element and the lead, the die pad, the semiconductor element, A sealing resin that seals the connection member and the lead, and the surface of the die pad, the semiconductor element, the connection member, and the lead is surface-treated with a silane coupling agent,
- the first surface of the semiconductor element to which the connection member is bonded includes a first region where an organic substance is exposed and a second region where an inorganic substance is exposed, and the first region and the first region
- the surface of the second region is surface-treated with a silane coupling agent, and the bonding strength between the first region and the sealing resin is the same as that of the second region. Weaker than the bonding strength between Kifutome resin.
- the surface treatment using the silane coupling agent is performed after the mounting of the semiconductor element and the connection with the lead is completed, not only the bonding strength between the die pad and the sealing resin but also the sealing between the semiconductor element and the sealing element is performed. Bonding strength with the stop resin is also improved.
- the hydroxyl region end of the silane coupling agent is less likely to bind to the first region where the organic matter is exposed than the second region where the inorganic matter is exposed, the bonding strength between the sealing resin and the first region is reduced. Is weaker than the bonding strength between the sealing resin and the second region.
- the second region of the semiconductor element and the sealing are sealed based on the difference in coefficient of thermal expansion between the semiconductor element and the sealing resin.
- the stress generated at the interface with the stop resin can be relaxed in the semiconductor element and the sealing resin corresponding to the first region.
- FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. It is a figure which shows the flow of the manufacturing method which concerns on 1st embodiment. It is the figure which showed the area
- the semiconductor package 30 according to the present embodiment includes a die pad 11, a semiconductor element 31, a lead 12, a suspension lead portion 15, a connection member 32, a sealing resin 33, including.
- the die pad 11 is a flat member for mounting the semiconductor element 31. As shown in FIG. 2, the die pad 11 has a first main surface 1101 and a second main surface (upper surface) 1102 opposite to the first main surface 1101. The semiconductor element 31 is bonded to the second main surface 1102 of the die pad 11 using a bonding member 41 such as solder or silver paste.
- a bonding member 41 such as solder or silver paste.
- the semiconductor element 31 includes a base material portion 311.
- the base material portion 311 is a plate-like semiconductor having a rectangular shape in plan view.
- the base material part 311 is made of, for example, silicon.
- a semiconductor oxide film which is an inorganic substance, for example, a silicon oxide film (SiO 2 ) is formed on the surface of the base material portion 311.
- the base material portion 311 includes a first main surface 3111 and a second main surface 3112 opposite to the first main surface 3111.
- the second main surface 3112 faces the second main surface 1102 of the die pad 11.
- the semiconductor element 31 includes a guard ring 341.
- the guard ring 341 is formed in a loop shape.
- the guard ring 341 is made of aluminum, for example.
- the guard ring 341 is provided on the first main surface 3111 of the base material portion 311.
- the guard ring 341 is provided to protect the semiconductor element 31 from cracks that occur during scribing.
- An insulating layer 342 is formed on the surface of the guard ring 341.
- the insulating layer 342 is manufactured by, for example, forming a TEOS (tetraethoxysilane) layer on the surface of the guard ring 341 and then laminating an organic layer on the TEOS layer.
- the organic substance is, for example, polyimide.
- the surface of the insulating layer 342 is made of an organic material.
- the semiconductor element 31 includes an electrode portion 312.
- the electrode portion 312 is a plate-like metal member provided to electrically connect the semiconductor element 31 and the lead 12.
- the electrode portion 312 is provided in a portion of the first main surface 3111 of the base material portion 311 that is surrounded by the guard ring 341 in plan view.
- the electrode portion 312 is made of metal.
- the electrode unit 312 is made of aluminum, for example.
- a film of metal oxide, for example, aluminum oxide (Al 2 O 3 ) is formed on the surface of the electrode portion 312.
- the electrode unit 312 includes, for example, a first electrode 3121 and a second electrode 3122.
- the first surface 3101 is on the outermost surface of the semiconductor element 31 on the first main surface 3111 side.
- the first surface 3101 includes the first main surface 3111 of the base material portion 311, the surface of the insulating layer 342, and the surface of the electrode portion 312.
- the surface of the base material portion 311 is composed of an inorganic material such as a semiconductor or a semiconductor oxide film
- the surface of the insulating layer 342 is composed of an organic film made of an organic material such as polyimide
- the surface of the electrode portion 312 is a metal or metal oxide. It is comprised with inorganic substances, such as. Accordingly, the first surface 3101 includes the first region 34 where the organic matter is exposed and the second region 35 where the inorganic matter is exposed.
- the first region 34 includes the surface of the insulating layer 342.
- the second region 35 includes the surface of the electrode portion 312 and the first main surface 3111 of the base material portion 311. Note that there may be a portion where an organic film is formed on the surface of the electrode portion 312. In this case, the first region 34 includes an organic surface provided on the electrode portion 312. At least a part of the surface of the electrode portion 312 is included in the second region 35.
- connection member 32 is, for example, a bonding wire as shown in FIGS.
- the bonding wire is formed of the same inorganic material as the electrode unit 312, for example, aluminum.
- the connection member 32 includes a first connection member 321a and a second connection member 322a.
- the first connecting member 321a is joined to the surface of the portion included in the second region 35 of the first electrode 3121 by wire bonding.
- the second connection member 322a is joined to the surface of the portion included in the second region 35 of the second electrode 3122 by wire bonding.
- the first connecting member 321a is joined to the surface of the portion included in the second region 35 of the first electrode 3121 by wire bonding.
- the second connection member 322a is joined to the surface of the portion included in the second region 35 of the second electrode 3122 by wire bonding.
- the semiconductor element 31 includes a third electrode 313 as shown in FIGS.
- the third electrode 313 is formed on the second main surface 3112 of the base material portion 311.
- the semiconductor element 31 is, for example, a bipolar transistor.
- the first electrode 3121 is a gate electrode
- the second electrode 3122 is a source electrode
- the third electrode 313 is a drain electrode.
- the lead 12 includes a first end 17 and a second end 18.
- a connection member 32 is connected to the first end 17. For example, nickel plating is applied to the first end portion 17 of the lead 12.
- the leads 12 are arranged at an interval on one end side of the die pad 11 in plan view.
- the lead 12 is formed to extend in a direction away from one end of the die pad 11 along the main surfaces 1101 and 1102 of the die pad 11. Of both ends in the longitudinal direction of the lead 12, the end adjacent to the die pad 11 is a first end 17. The end located away from the die pad 11 is the second end 18.
- the leads 12 are arranged at an interval on one end side of the die pad 11 in plan view.
- the lead 12 is formed to extend in a direction away from one end of the die pad 11 along the main surfaces 1101 and 1102 of the die pad 11. Of both ends in the longitudinal direction of the lead 12, the end adjacent to the die pad 11 is a first end 17. The end located away from the die pad 11 is the second end 18.
- the suspension lead portion 15 extends in the longitudinal direction of the lead 12 from one end of the die pad 11.
- the suspension lead portion 15 is, for example, a drain wire.
- the suspension lead portion 15 is electrically connected to the third electrode 313 via the die pad 11.
- the die pad 11, the lead 12, and the suspension lead portion 15 are sealed with a sealing resin 33.
- the first end 17 of the lead 12 is sealed with a sealing resin 33.
- the second end portion 18 of the lead 12 extends from the sealing resin 33. Further, the first main surface 1101 of the die pad 11 is exposed to the outside of the sealing resin 33.
- the sealing resin 33 contains a silane coupling agent.
- the silane coupling agent contained in the sealing resin 33 is, for example, a curing accelerator when the sealing resin 33 is cured, or an adhesion improver that improves the adhesion between the sealing resin 33 and the die pad 11 and the semiconductor element 31. Function as.
- a silane coupling agent different from the silane coupling agent used in the surface treatment described later is used, but the same as the silane coupling agent used in the surface treatment.
- a silane coupling agent may be used.
- the surfaces of the die pad 11, the semiconductor element 31, the connection member 32, the lead 12 and the suspension lead portion 15 are surfaced by a silane coupling agent in a state where the semiconductor element is bonded to the die pad and the semiconductor element and the lead are connected by the connection member. As a result, the bonding strength with the sealing resin 33 is increased.
- the silane coupling agent molecule has two functional groups bonded to the silicon atom: the first functional group that chemically bonds to the organic material at the end and the second functional group that chemically bonds to the inorganic material at the end. Has the structure.
- the second functional group is bonded to the inorganic material by, for example, dehydrating condensation with a hydroxyl group on the surface of the inorganic material by hydrolysis.
- silane coupling agent known ones such as 3-mercaptopropyltrimethoxysilane and 3-acryloxypropyltrimethoxysilane can be used.
- the lead frame When manufacturing the semiconductor package 30, a lead frame having the die pad 11, the lead 12 and the suspension lead portion 15 shown in FIG. 1 is prepared.
- the lead frame further includes a connection frame portion (not shown) that integrally connects the die pad 11 and the plurality of leads 12.
- the lead frame can be obtained by, for example, pressing a conductive plate material such as a copper plate.
- the suspension lead portion 15 is bent, and the die pad 11 is shifted in the thickness direction with respect to the lead 12. Accordingly, the lead 12 is positioned above the second main surface 1102 of the die pad 11 (see FIG. 2).
- the semiconductor element 31 is mounted on the second main surface (upper surface) 1102 of the die pad 11, as shown in FIGS.
- the semiconductor element 31 is placed so that the second main surface 3112 of the base material portion 311 faces the second main surface 1102 of the die pad 11.
- the third main electrode 313 formed on the second surface 3102 which is the surface opposite to the first surface 3101 of the semiconductor element 31, is bonded to the second main surface of the die pad 11 by a bonding member 41 such as solder or silver paste. Bonded to surface 1102. Joining using solder is performed, for example, by a reflow method.
- the third electrode 313 is electrically connected to the die pad 11 by the bonding member.
- connection process S2 Next, as shown in FIG. 5, the semiconductor element 31 and the lead 12 are electrically connected by a connecting member 32. In the connecting step, both ends of the connecting member 32 are connected to the semiconductor element 31 and the lead 12 (see FIGS. 1 and 2).
- connection step S2 as shown in FIGS. 1 and 2, the first electrode 3121 of the semiconductor element 31 and the first lead 121 are connected by the first bonding wire 321a. Further, the second electrode 3122 of the semiconductor element 31 and the second lead 122 are connected by the second bonding wire 322a.
- the surface treatment step S3 includes, for example, a spraying step S31 and a heating step S32 in this order.
- a solution obtained by diluting the silane coupling agent with ethanol, methanol, isopropyl alcohol, or the like is used, for example, from the second main surface 1102 side of the die pad 11, the die pad 11, the semiconductor element 31, and the connecting member 32.
- the surface of the lead 12 and the suspension lead portion 15 is sprayed.
- region to spray is area
- a silane coupling agent is applied to the upper surface of the end portion 17 and the suspension lead portion 15.
- the base material portion 311 is formed of silicon. For this reason, a film of silicon oxide (SiO 2 ) is formed on the surface of the base material portion 311. Moreover, the electrode part 312 is formed with aluminum. For this reason, a film of aluminum oxide (Al 2 O 3 ) is formed on the surface of the electrode portion 312.
- the number of exposed hydroxyl terminal ends is smaller than in the second region 35 including the base material portion 311 and the electrode portion 312.
- the second functional group of the silane coupling agent is not easily bonded to the first region 34. Therefore, the bonding strength between the sealing resin 33 and the first region 34 is weaker than the bonding strength between the sealing resin 33 and the second region 35.
- the semiconductor element 31 When performing a reliability test such as a temperature cycle test or an intermittent operation test, the semiconductor element 31 is heated from the outside or generates heat by itself. Although the semiconductor element 31 and the sealing resin 33 are thermally expanded by the generated heat, the second region 35 including the electrode portion 312 and the base material portion 311 and the second region 35 are strong due to a difference in thermal expansion coefficient. A large stress is generated at the interface with the sealing resin 33 bonded to.
- the bonding strength between the sealing resin 33 and the first region 34 is weaker than the bonding strength between the sealing resin 33 and the second region 35. No significant stress is generated at the interface. For this reason, the stress generated at the interface between the second region 35 of the semiconductor element 31 and the sealing resin 33 is relaxed in the semiconductor element and the sealing resin corresponding to the first region 34. As a result, it is possible to suppress the stress from acting strongly on the second region 35.
- the mechanism by which the stress generated at the interface between the semiconductor element 31 and the sealing resin 33 is relaxed by forming the first region 34 is as follows.
- the semiconductor element 31 and the sealing resin 33 When heat is applied to the semiconductor element 31 and the sealing resin 33, the semiconductor element 31 and the sealing resin 33 each thermally expand. Due to thermal expansion, the semiconductor element 31 and the sealing resin 33 each expand in a direction parallel to the interface. The semiconductor element 31 and the sealing resin 33 have different thermal expansion coefficients. For this reason, the expanding length differs between the semiconductor element 31 and the sealing resin 33.
- the semiconductor element 31 has a larger thermal expansion coefficient than the sealing resin 33. The same applies when the thermal expansion coefficient of the sealing resin 33 is larger.
- the sealing resin 33 having a smaller expansion length follows the semiconductor element 31 having a larger expansion length and is parallel to the interface. It is displaced to. For this reason, in the vicinity of the interface, the sealing resin 33 receives an elastic force proportional to the amount of displacement of the sealing resin 33.
- the amount of displacement is proportional to the difference between the expanding lengths of the semiconductor element 31 and the sealing resin 33. As a result, it is considered that stress is generated in the vicinity of the interface.
- the length of expansion of the semiconductor element 31 and the sealing resin 33 is proportional to the length of the surface where the semiconductor element 31 and the sealing resin 33 are joined before heat is applied. Therefore, the longer the surface where the semiconductor element 31 and the sealing resin 33 are joined, the greater the stress generated in the vicinity of the interface.
- the first region 34 is formed on a part of the surface where the semiconductor element 31 and the sealing resin 33 are joined before the heat is applied.
- the sealing resin 33 since the bonding strength between the semiconductor element 31 and the sealing resin 33 is weak, the sealing resin 33 is difficult to follow the semiconductor element 31 and be displaced. For this reason, the length of the surface where the semiconductor element 31 and the sealing resin 33 are joined is substantially shortened. As a result, the stress generated near the interface can be further reduced.
- the above is the mechanism in which the stress is relaxed by forming the first region 34.
- the base material portion 311 and the electrode portion 312 have a strong binding force with the sealing resin, there is little possibility that the base material portion 311 and the electrode portion 312 are all peeled off from the sealing resin 33. Therefore, the electrical characteristics of the semiconductor element 31 can be enhanced without significantly impairing the adhesion between the semiconductor element 31 and the sealing resin 33.
- the bonding strength between the first region 34 and the sealing resin 33 is weaker than the bonding strength between the surface of the electrical connection portion and the sealing resin 33. Therefore, the connection member 32 joined to the electrode portion 312 can be protected from being peeled off. Thereby, the connection reliability of the semiconductor element 31 and the connection member 32 can be improved.
- the first region 34 is formed in a loop shape.
- the stress generated based on the difference in thermal expansion coefficient between the semiconductor element 31 and the sealing resin 33 is the first stress regardless of the direction in the first surface 3101. This can be mitigated in the portion of the semiconductor element or sealing resin corresponding to the region 34.
- the bonding strength between the sealing resin 33 and the bonding member 41 is weaker than the bonding strength between the sealing resin 33 and the second region 35 and the bonding strength between the sealing resin 33 and the die pad 11. Therefore, the stress generated between the semiconductor element 31 and the die pad 11 due to the difference in thermal expansion coefficient between the semiconductor element 31 or the die pad 11 and the sealing resin 33 can be relaxed on the surface of the bonding member 41. it can.
- the material which forms the base material part 311 and the material which forms the electrode part 312 are not restricted to the above-mentioned combination.
- the semiconductor material and the metal material can be selected as appropriate, and the number of hydroxyl groups on the surface can be controlled by appropriately performing surface treatment according to the characteristics of the material. For this reason, the bonding strength between the electrode portion 312 and the sealing resin 33 can be made weaker than the bonding strength between the base material portion 311 and the sealing resin 33 for various combinations of materials.
- the lead frame after the solution spraying is heated.
- the lead frame after spraying the solution is heated at a temperature of 25 ° C. to 250 ° C. (more preferably 50 ° C. to 150 ° C.). Since the heating temperature is relatively low, the dehydration condensation reaction of the silane coupling agent hardly proceeds in the electrode part. Therefore, it is suppressed that the adhesive force between the electrode portion 312 and the sealing resin 33 becomes excessively strong.
- the sealing resin 33 includes a silane coupling agent.
- the silane coupling agent contained in the sealing resin 33 has a function as an adhesion imparting agent, the adhesion between the sealing resin 33 and the die pad 11 and the semiconductor element 31 is increased.
- the silane coupling agent contained in the sealing resin 33 may be used as a curing accelerator or the like when the sealing resin 33 is cured, and the silane coupling agent used in the surface treatment step S3 is The required functions do not necessarily match. If the silane coupling agent contained in the sealing resin 33 and the silane coupling agent used in the surface treatment step S3 are different, an appropriate silane coupling agent can be selected according to the function required for each.
- the connecting frame portion (not shown) excluding one end on the die pad side of the suspension lead portion 15 and the second end portion 18 of the lead 12 are arranged outside the sealing resin 33. .
- the connecting frame portion excluding one end portion of the suspension lead portion 15 is cut off. Further, the second end portion 18 of each lead 12 is bent as necessary. Thereby, the semiconductor package 30 shown in FIGS. 1 and 2 is obtained.
- the sealing resin 33 is formed so that the first main surface 1101 is exposed. However, the lead frame and the molding die are disposed so that the first main surface 1101 is buried in the sealing resin 33. May be designed.
- the first embodiment of the present invention has been described above.
- the surfaces of the die pad 11 and the semiconductor element 31 are surface-treated with a silane coupling agent, not only the adhesion between the die pad 11 and the sealing resin 33 but also between the semiconductor element 31 and the sealing resin 33. Adhesion also increases. Therefore, even if a temperature cycle test or the like is performed, peeling does not easily occur between the semiconductor element 31 and the sealing resin 33, and the occurrence of cracks in the bonding member 41 that connects the semiconductor element 31 and the die pad 11 can be suppressed.
- the semiconductor is tested when the reliability test is performed.
- the stress generated at the interface between the second region 35 of the element 31 and the sealing resin 33 is relieved at the portion of the semiconductor element or the sealing resin corresponding to the first region 34. Therefore, it is possible to suppress the stress generated in the sealing resin 33 from acting on the electrode portion 312 strongly.
- the base material portion 311 and the electrode portion 312 have a strong bonding force with the sealing resin 33, there is little possibility that the base material portion 311 and the electrode portion 312 are all separated from the sealing resin 33. Therefore, the electrical characteristics of the semiconductor element 31 can be enhanced without significantly impairing the adhesion between the semiconductor element 31 and the sealing resin 33.
- the semiconductor package 30 having high adhesion between the die pad 11 and the semiconductor element 31 and the sealing resin 33 and excellent in the electrical characteristics of the semiconductor element 31.
- connection member 32 is not a bonding wire but a clip connector. This is different from the first embodiment.
- the clip connector is a strip-shaped connection member, and is formed by bending a conductive plate material.
- One end surface of the clip connector is bonded to the surface of the first end portion 17 of the lead 12 via a bonding member such as solder or silver paste.
- the other end surface of the clip connector is bonded to the surface of the electrode portion 312 via a bonding member such as solder or silver paste.
- the clip connector includes, for example, a first clip connector (not shown) and a second clip connector 322b.
- the first electrode 3121 (see FIGS. 1 and 2) is connected to the first clip connector.
- the second electrode 3122 is connected to the second clip connector 322b.
- the semiconductor package 30b of this embodiment is manufactured by the same manufacturing method as that of the first embodiment. According to this embodiment, the same effects as those of the first embodiment can be obtained.
- Example ⁇ A semiconductor package was manufactured using a sealing resin (epoxy resin). In the manufacturing process, the above-described surface treatment process was performed. As a silane coupling agent to be sprayed, 3-mercaptopropyltrimethoxysilane was used.
- Comparative Example A semiconductor package was manufactured without performing the surface treatment. Other manufacturing conditions are the same as in the examples. The comparative example was also subjected to the same temperature cycle test as that of the example, and the variation of the thermal resistance characteristics was evaluated.
- the present invention can be used to increase the adhesion between the die pad and the semiconductor element and the sealing resin, and to improve the connection reliability between the semiconductor element and the connection member.
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Abstract
Description
(半導体パッケージ)
以下、図1から図4を参照して、本実施形態に係る半導体パッケージ30について説明する。本実施形態に係る半導体パッケージ30は、図1および図2に示すように、ダイパッド11と、半導体素子31と、リード12と、吊りリード部15と、接続部材32と、封止樹脂33と、を含む。
以下、主に図5および図6を参照して、本実施形態に係る製造方法について説明する。
図5に示すように、本実施形態の半導体パッケージ30の製造方法では、まず、ダイパッド11の第二の主面(上面)1102に、半導体素子31を搭載する(図1および図2参照)。
次に、図5に示すように、半導体素子31とリード12とを、接続部材32によって電気的に接続する。接続工程では、接続部材32の両端を、半導体素子31及びリード12に接続する(図1および図2参照)。
次に、図5に示すように、ダイパッド11、半導体素子31、接続部材32、リード12および吊りリード部15の表面をシランカップリング剤によって表面処理する(図1および図2参照)。表面処理工程S3は、例えば、噴霧工程S31と、加熱工程S32と、をこの順に含む。
次に、図5に示すように、ダイパッド11、半導体素子31、接続部材32、リード12および吊りリード部15を、封止樹脂33で封止する。封止工程を行う際には、あらかじめ、半導体パッケージ30の外側の形状にあわせて作製されたモールド金型(図示略)を準備する。封止工程S4においては、ダイパッド11、半導体素子31、接続部材32、リード12および吊りリード部15を、モールド金型に設置する。その上で、モールド金型に、封止樹脂33を流し込み硬化させる。
以下、図7を参照して、本実施形態に係る半導体パッケージ30bについて説明する。以下、図1から図6までと同じ構成要素には同じ符号を付し、説明を省略する。
封止樹脂(エポキシ樹脂)を用いて、半導体パッケージを製造した。製造過程で、上述の表面処理工程を行った。噴霧するシランカップリング剤として、3-メルカプトプロピルトリメトキシシランを用いた。
(前処理1)Ta(周囲温度)=125℃、24時間
(前処理2)Ta=85℃、RH(相対湿度)=85%、168時間
(前処理3)IRリフロー(260℃、2サイクル)
(条件)最低保存温度=-55℃、最高保存温度=150℃、1000サイクル
半導体パッケージを、上記表面処理を行わずに製造した。その他の製造条件は、実施例と同じである。比較例についても、実施例と同じ温度サイクル試験を行い、熱抵抗特性の変動を評価した。
表面処理を行った実施例では、1000サイクル終了時点まで不良品が発生しなかった。これに対し、表面処理を行わなかった比較例では、300サイクル終了時点で既に不良品が発生し、1000サイクル終了時点において、比較例で発生した不良品は全サンプルの77%であった。
12 リード
31 半導体素子
32 接続部材
33 封止樹脂
30 半導体パッケージ
312 電極部
34 第一の領域
35 第二の領域
41 接合部材
S1 搭載工程
S2 接続工程
S3 表面処理工程
S31 噴霧工程
S32 加熱工程
S4 封止工程
Claims (11)
- ダイパッドの上面に半導体素子を接合する搭載工程と、前記半導体素子とリードとを接続部材によって電気接続する接続工程と、前記ダイパッド、前記半導体素子、前記接続部材および前記リードの表面をシランカップリング剤によって表面処理する表面処理工程と、前記ダイパッド、前記半導体素子、前記接続部材および前記リードを封止樹脂で封止する封止工程と、をこの順に含み、
前記半導体素子の表面のうち前記接続部材が接合される前記半導体素子の第一の面は、有機物が露出した第一の領域と、無機物が露出した第二の領域と、を含み、
前記第一の領域と前記封止樹脂との接合強度は、前記第二の領域と前記封止樹脂との接合強度よりも弱い
半導体パッケージの製造方法。 - 前記半導体素子の前記第一の面には、前記接続部材と電気接続される電極部が設けられ、
前記電極部と前記接続部材とにより電気接続部が構成されており、
前記電気接続部の表面は、無機物によって構成され、
前記第一の領域と前記封止樹脂との接合強度は、前記電気接続部の表面と前記封止樹脂との接合強度よりも弱い
請求項1に記載の半導体パッケージの製造方法。 - 前記搭載工程において、前記ダイパッドと前記半導体素子とを接合部材を用いて接合し、
前記表面処理工程において、前記接合部材の表面を前記シランカップリング剤によって表面処理し、
前記第二の領域と前記封止樹脂との接合強度は、前記接合部材と前記封止樹脂との接合強度よりも強く、
前記ダイパッドの前記上面と前記封止樹脂との接合強度は、前記接合部材と前記封止樹脂との接合強度よりも強い
請求項1または2に記載の半導体パッケージの製造方法。 - 前記表面処理工程は、前記ダイパッド、前記半導体素子、前記接続部材および前記リードの表面に前記シランカップリング剤を含む溶液を噴霧する噴霧工程と、前記溶液を加熱する加熱工程と、をこの順に含む
請求項1から3のいずれか1項に記載の半導体パッケージの製造方法。 - 前記加熱工程では、前記ダイパッドおよび前記リードを含むリードフレームを25℃~150℃の温度で加熱する
請求項4に記載の半導体パッケージの製造方法。 - 前記封止樹脂には、シランカップリング剤が含まれている
請求項1から5のいずれか1項に記載の半導体パッケージの製造方法。 - ダイパッドと、前記ダイパッドの上面に接合された半導体素子と、リードと、前記半導体素子と前記リードとを接続する接続部材と、前記ダイパッド、前記半導体素子、前記接続部材および前記リードを封止する封止樹脂と、を含み、
前記ダイパッド、前記半導体素子、前記接続部材および前記リードの表面は、シランカップリング剤によって表面処理され、
前記半導体素子の表面のうち前記接続部材が接合される前記半導体素子の前記第一の面は、有機物が露出した第一の領域と、無機物が露出した第二の領域と、を含み、
前記第一の領域と前記封止樹脂との接合強度は、前記第二の領域と前記封止樹脂との接合強度よりも弱い
半導体パッケージ。 - 前記半導体素子の前記第一の面には、前記接続部材と電気接続される電極部が設けられ、
前記電極部と前記接続部材とにより電気接続部が構成されており、
前記電気接続部の表面は、無機物によって構成され、
前記第一の領域と前記封止樹脂との接合強度は、前記電気接続部の表面と前記封止樹脂との接合強度よりも弱い
請求項7に記載の半導体パッケージ。 - 前記第一の領域は、ループ状に形成されている
請求項7または8に記載の半導体パッケージ。 - 前記ダイパッドと前記半導体素子とは、接合部材を用いて接合され、
前記接合部材の露出した表面は、前記シランカップリング剤によって表面処理されており、
前記第二の領域と前記封止樹脂との接合強度は、前記接合部材と前記封止樹脂との接合強度よりも強く、
前記ダイパッドの前記上面と前記封止樹脂との接合強度は、前記接合部材と前記封止樹脂との接合強度よりも強い
請求項7から9のいずれか1項に記載の半導体パッケージ。 - 前記封止樹脂には、シランカップリング剤が含まれている
請求項7から10のいずれか1項に記載の半導体パッケージ。
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CN201480003328.7A CN105684142B (zh) | 2014-09-29 | 2014-09-29 | 半导体封装件的制造方法以及半导体封装件 |
JP2015508905A JP5930566B1 (ja) | 2014-09-29 | 2014-09-29 | 半導体パッケージの製造方法および半導体パッケージ |
US14/648,558 US9548262B2 (en) | 2014-09-29 | 2014-09-29 | Method of manufacturing semiconductor package and semiconductor package |
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