CN105684088A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN105684088A CN105684088A CN201480048217.8A CN201480048217A CN105684088A CN 105684088 A CN105684088 A CN 105684088A CN 201480048217 A CN201480048217 A CN 201480048217A CN 105684088 A CN105684088 A CN 105684088A
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- China
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- delay circuit
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/109—Control signal input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810938181.0A CN109147838B (zh) | 2013-09-04 | 2014-07-29 | 半导体存储装置 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361873800P | 2013-09-04 | 2013-09-04 | |
US61/873,800 | 2013-09-04 | ||
US14/201,686 US9171600B2 (en) | 2013-09-04 | 2014-03-07 | Semiconductor memory device |
US14/201,686 | 2014-03-07 | ||
PCT/JP2014/070417 WO2015033718A1 (en) | 2013-09-04 | 2014-07-29 | Semiconductor memory device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810938181.0A Division CN109147838B (zh) | 2013-09-04 | 2014-07-29 | 半导体存储装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105684088A true CN105684088A (zh) | 2016-06-15 |
CN105684088B CN105684088B (zh) | 2018-09-18 |
Family
ID=52583062
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480048217.8A Active CN105684088B (zh) | 2013-09-04 | 2014-07-29 | 半导体存储装置 |
CN201810938181.0A Active CN109147838B (zh) | 2013-09-04 | 2014-07-29 | 半导体存储装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810938181.0A Active CN109147838B (zh) | 2013-09-04 | 2014-07-29 | 半导体存储装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US9171600B2 (zh) |
CN (2) | CN105684088B (zh) |
RU (1) | RU2641478C2 (zh) |
TW (1) | TWI549125B (zh) |
WO (1) | WO2015033718A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107526857A (zh) * | 2016-06-22 | 2017-12-29 | 中芯国际集成电路制造(天津)有限公司 | Eeprom单元仿真模型以及eeprom阵列仿真模型 |
CN107767912A (zh) * | 2016-08-23 | 2018-03-06 | 东芝存储器株式会社 | 半导体装置 |
CN110197679A (zh) * | 2018-02-27 | 2019-09-03 | 爱思开海力士有限公司 | 半导体器件和包括其的半导体系统及其操作方法 |
CN112685801A (zh) * | 2019-10-18 | 2021-04-20 | 意法半导体(鲁塞)公司 | 片上电路的认证方法以及相关联的片上系统 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9171600B2 (en) * | 2013-09-04 | 2015-10-27 | Naoki Shimizu | Semiconductor memory device |
US10163474B2 (en) | 2016-09-22 | 2018-12-25 | Qualcomm Incorporated | Apparatus and method of clock shaping for memory |
KR20200109030A (ko) * | 2019-03-12 | 2020-09-22 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US11797186B2 (en) | 2019-12-20 | 2023-10-24 | Micron Technology, Inc. | Latency offset for frame-based communications |
CN111510509B (zh) * | 2020-06-15 | 2020-12-08 | 佛山市睿宝智能科技有限公司 | 针织机选针器的数据通讯方法、存储介质和针织机 |
KR20210158571A (ko) | 2020-06-24 | 2021-12-31 | 에스케이하이닉스 주식회사 | 레이턴시 설정 회로를 포함하는 반도체 메모리 장치 |
KR20220015218A (ko) | 2020-07-30 | 2022-02-08 | 에스케이하이닉스 주식회사 | 오토프리차지동작을 수행하는 전자장치 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5748553A (en) * | 1995-09-26 | 1998-05-05 | Nec Corporation | Semiconductor memory device having extended margin in latching input signal |
US6125064A (en) * | 1998-11-13 | 2000-09-26 | Hyundai Micro Electronics Co., Ltd. | CAS latency control circuit |
CN1402255A (zh) * | 2001-08-03 | 2003-03-12 | 富士通株式会社 | 半导体存储器 |
JP2003263891A (ja) * | 2002-03-11 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
CN101465158A (zh) * | 2007-12-19 | 2009-06-24 | 富士通微电子株式会社 | 半导体存储器、存储器系统和存储器访问控制方法 |
US20100157717A1 (en) * | 2008-12-22 | 2010-06-24 | Kyong Ha Lee | Semiconductor integrated circuit capable of controlling read command |
US20100157702A1 (en) * | 2008-12-19 | 2010-06-24 | Samsung Electronics Co., Ltd. | Semiconductor memory device adopting improved local input/output line precharging scheme |
CN102456392A (zh) * | 2010-10-15 | 2012-05-16 | 台湾积体电路制造股份有限公司 | 具有时钟偏移发生器的存储器器件 |
Family Cites Families (18)
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RU2156506C2 (ru) * | 1993-04-27 | 2000-09-20 | Самсунг Электроникс Ко., Лтд. | Полупроводниковая память |
CN1147864C (zh) * | 1995-08-31 | 2004-04-28 | 株式会社东芝 | 半导体存储装置 |
JP3789173B2 (ja) * | 1996-07-22 | 2006-06-21 | Necエレクトロニクス株式会社 | 半導体記憶装置及び半導体記憶装置のアクセス方法 |
KR100425472B1 (ko) | 2001-11-12 | 2004-03-30 | 삼성전자주식회사 | 동기식 반도체 메모리 장치의 출력 제어 신호 발생 회로및 출력 제어 신호 발생 방법 |
US6944091B2 (en) | 2002-07-10 | 2005-09-13 | Samsung Electronics Co., Ltd. | Latency control circuit and method of latency control |
KR100625296B1 (ko) | 2004-12-30 | 2006-09-19 | 주식회사 하이닉스반도체 | 고주파수 동작을 위한 동기식 반도체 장치의 레이턴시제어장치 및 그 제어방법 |
KR100632626B1 (ko) * | 2005-10-14 | 2006-10-09 | 주식회사 하이닉스반도체 | 데이터 입출력 동작시 소비 전류를 감소시키는 클럭 제어회로와 이를 포함하는 반도체 메모리 장치 및 그 데이터입출력 동작 방법 |
US8004880B2 (en) * | 2007-03-06 | 2011-08-23 | Qualcomm Incorporated | Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory |
JP4708389B2 (ja) | 2007-05-14 | 2011-06-22 | 富士通セミコンダクター株式会社 | クロック同期型メモリ装置及びそのスケジューラ回路 |
KR100884604B1 (ko) * | 2007-09-04 | 2009-02-19 | 주식회사 하이닉스반도체 | 충분한 내부 동작 마진을 확보하기 위한 반도체 메모리장치 및 그 방법 |
US7729182B2 (en) * | 2008-09-03 | 2010-06-01 | Micron Technology, Inc. | Systems and methods for issuing address and data signals to a memory array |
KR101153795B1 (ko) * | 2009-12-24 | 2012-06-13 | 에스케이하이닉스 주식회사 | 반도체 회로 장치 |
US7986165B1 (en) * | 2010-02-08 | 2011-07-26 | Qualcomm Incorporated | Voltage level shifter with dynamic circuit structure having discharge delay tracking |
JP5436335B2 (ja) * | 2010-05-25 | 2014-03-05 | 三菱電機株式会社 | 走査線駆動回路 |
JP2012108979A (ja) | 2010-11-17 | 2012-06-07 | Elpida Memory Inc | 半導体装置 |
KR20120110431A (ko) * | 2011-03-29 | 2012-10-10 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
KR20120119348A (ko) * | 2011-04-21 | 2012-10-31 | 에스케이하이닉스 주식회사 | 지연회로 및 메모리의 레이턴시 제어회로 및 신호 지연 방법 |
US9171600B2 (en) * | 2013-09-04 | 2015-10-27 | Naoki Shimizu | Semiconductor memory device |
-
2014
- 2014-03-07 US US14/201,686 patent/US9171600B2/en active Active
- 2014-07-29 WO PCT/JP2014/070417 patent/WO2015033718A1/en active Application Filing
- 2014-07-29 RU RU2016107392A patent/RU2641478C2/ru active
- 2014-07-29 CN CN201480048217.8A patent/CN105684088B/zh active Active
- 2014-07-29 CN CN201810938181.0A patent/CN109147838B/zh active Active
- 2014-09-04 TW TW103130635A patent/TWI549125B/zh active
-
2015
- 2015-09-24 US US14/864,271 patent/US9530480B2/en active Active
-
2016
- 2016-11-30 US US15/365,358 patent/US9805781B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5748553A (en) * | 1995-09-26 | 1998-05-05 | Nec Corporation | Semiconductor memory device having extended margin in latching input signal |
US6125064A (en) * | 1998-11-13 | 2000-09-26 | Hyundai Micro Electronics Co., Ltd. | CAS latency control circuit |
CN1402255A (zh) * | 2001-08-03 | 2003-03-12 | 富士通株式会社 | 半导体存储器 |
JP2003263891A (ja) * | 2002-03-11 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
CN101465158A (zh) * | 2007-12-19 | 2009-06-24 | 富士通微电子株式会社 | 半导体存储器、存储器系统和存储器访问控制方法 |
US20100157702A1 (en) * | 2008-12-19 | 2010-06-24 | Samsung Electronics Co., Ltd. | Semiconductor memory device adopting improved local input/output line precharging scheme |
US20100157717A1 (en) * | 2008-12-22 | 2010-06-24 | Kyong Ha Lee | Semiconductor integrated circuit capable of controlling read command |
CN102456392A (zh) * | 2010-10-15 | 2012-05-16 | 台湾积体电路制造股份有限公司 | 具有时钟偏移发生器的存储器器件 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107526857A (zh) * | 2016-06-22 | 2017-12-29 | 中芯国际集成电路制造(天津)有限公司 | Eeprom单元仿真模型以及eeprom阵列仿真模型 |
CN107526857B (zh) * | 2016-06-22 | 2021-04-23 | 中芯国际集成电路制造(天津)有限公司 | Eeprom单元仿真模型以及eeprom阵列仿真模型 |
CN107767912A (zh) * | 2016-08-23 | 2018-03-06 | 东芝存储器株式会社 | 半导体装置 |
CN107767912B (zh) * | 2016-08-23 | 2021-05-07 | 东芝存储器株式会社 | 半导体装置 |
CN110197679A (zh) * | 2018-02-27 | 2019-09-03 | 爱思开海力士有限公司 | 半导体器件和包括其的半导体系统及其操作方法 |
CN112685801A (zh) * | 2019-10-18 | 2021-04-20 | 意法半导体(鲁塞)公司 | 片上电路的认证方法以及相关联的片上系统 |
Also Published As
Publication number | Publication date |
---|---|
US20160012875A1 (en) | 2016-01-14 |
WO2015033718A1 (en) | 2015-03-12 |
CN105684088B (zh) | 2018-09-18 |
TW201523602A (zh) | 2015-06-16 |
RU2641478C2 (ru) | 2018-01-17 |
US20150063017A1 (en) | 2015-03-05 |
US9171600B2 (en) | 2015-10-27 |
TWI549125B (zh) | 2016-09-11 |
CN109147838B (zh) | 2022-05-03 |
CN109147838A (zh) | 2019-01-04 |
US9805781B2 (en) | 2017-10-31 |
RU2016107392A (ru) | 2017-10-09 |
US20170084325A1 (en) | 2017-03-23 |
US9530480B2 (en) | 2016-12-27 |
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