CN105618153A - 一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料及应用 - Google Patents

一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料及应用 Download PDF

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CN105618153A
CN105618153A CN201510994514.8A CN201510994514A CN105618153A CN 105618153 A CN105618153 A CN 105618153A CN 201510994514 A CN201510994514 A CN 201510994514A CN 105618153 A CN105618153 A CN 105618153A
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tio
silicon
ppy
titanium dioxide
polypyrrole
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CN105618153B (zh
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石刚
李赢
倪才华
王大伟
何飞
迟力峰
吕男
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Jiangnan University
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Abstract

本发明涉及一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料,依以下方法制备：(1)首先用一定浓度的碱液，对硅片进行各向异性刻蚀，在其表面形成紧密排列的四方锥形貌；(2)然后将步骤(1)刻蚀后的硅片进行亲水处理，在其表面生长二氧化钛晶种，并置于马弗炉内煅烧；(3)再将步骤(2)中所得到的表面具有二氧化钛晶种的硅片置于反应釜中，采用水热法在硅锥的侧壁上生长二氧化钛纳米棒；(4)最后在步骤(3)中得到的二氧化钛纳米棒上沉积聚吡咯纳米粒子。本发明所涉及的三维仿生复合材料兼具优异消反射和高效分离光生电荷的能力，可以应用到光催化、光电转化器件和太阳能电池等领域。

Description

一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料及应用
技术领域
本发明涉及一种三元层级组装的复合材料即硅-二氧化钛-聚吡咯复合材料，同时此类复合物可以用作光催化材料和光电转化材料，属于光电材料技术领域。
背景技术
自然界中的太阳光作为一种可再生的绿色能源引起人们的广泛关注，在将太阳能转化为可用能源过程中，寻找高效转化材料十分重要。二氧化钛是一种重要的光电转化材料，同时具有催化活性高、稳定性好、高羟基自由基产率、光照不腐蚀等优点，在防腐涂料、污水净化、抗菌杀菌等方面表现出尤为突出的应用前景。然而，二氧化钛禁带宽度较大，光生电荷易复合，有效利用太阳光的波长范围小等缺点，限制了其应用。
聚吡咯具有良好的环境稳定性，在可见光区有很强烈的吸收，是强的供电子体和优良的空穴传输材料。当两者有效的进行复合，接触界面处将会形成异质结，不仅能提高光生电荷的分离效率，而且可将复合材料的光谱响应范围，从而提高太阳光的利用率。专利CN101955665A公开了一种聚吡咯颗粒/二氧化钛纳米管列阵的复合材料制备方法；专利CN102350317A公开了一种聚吡咯/二氧化钛复合吸附剂及其制备、应用和再生方法；专利CN102600907A公开了一种聚吡咯敏化的中空状二氧化钛纳米光催化剂及其制备方法；以上一定程度解决了二氧化钛禁带宽度大、光谱响应范围小，光生电子-空穴对易复合等问题。然而，聚吡咯/二氧化钛复合物仍然存在着有序性较差、易团聚、回收利用率较低，光吸收率不高等问题，限制了聚吡咯/二氧化钛复合物的推广应用。
发明内容
本发明目的是为了克服传统的二氧化钛/聚吡咯纳米复合物无序、易团聚、难回收和光电转化效率低等缺点，提供了一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料，兼具良好的消反射性能和高效分离光生电荷能力，提高了材料的光电转化效率，表现出优异的光催化能力，同时该复合材料以单晶硅为载体，有利于材料的回收再利用。
按照本发明提供的技术方案，所述一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料，即是硅/二氧化钛/聚吡咯(Si/TiO2/PPY)。Si是表面具有锥形微结构的100型单晶硅，为P型半导体，硅锥结构形状为四方锥，高度为4～10μm，紧密排列；TiO2是金红石相的TiO2纳米棒，为N型半导体，四棱柱形状，高度为500～4000nm，直径为40～250nm，有序垂直生长在硅锥的侧壁上。PPY是聚吡咯纳米粒子，为P型半导体，粒径为10～60nm，均匀生长在TiO2纳米棒表面。Si/TiO2/PPY三维仿生复合材料中的Si与TiO2界面、TiO2与PPY界面形成双P/N异质结，可以高效分离光生电荷，同时具有三维的仿生复合结构，可以有效降低入射光在表面的反射率。
所制备的一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料的制备方法，其特征是，包括以下步骤：
(1)首先用一定浓度的碱液，在搅拌的条件下，对硅片进行各向异性刻蚀，在硅片表面形成紧密排列的四方锥形貌；
(2)然后将步骤(1)刻蚀后的硅片进行亲水处理，在其表面生长TiO2晶种，并置于马弗炉内煅烧一段时间后自然冷却；
(3)再将步骤(2)中所得到的表面具有TiO2晶种的硅片置于反应釜中，采用水热合成的方法在硅锥的侧壁上生长TiO2纳米棒；
(4)最后在步骤(3)中得到的TiO2纳米棒上沉积导电PPY纳米粒子，得到三维Si/TiO2/PPY。
进一步的，步骤(1)所述的碱液为氢氧化钾、四甲基氢氧化铵、氢氧化钠、氨水、EDP(乙二胺、邻苯二酚和水的混合溶液)，碱液的PH＝12～14，刻蚀温度50～90℃，刻蚀时间5～60min，搅拌的方式为机械搅拌磁力搅拌。
进一步的，步骤(2)所述的亲水处理操作为将步骤(1)得到的硅片置于NH3H2O、H2O2和H2O的混合溶液中，体积比为1:1:5，温度为90℃，加热时间30min。
进一步的，步骤(2)所述的生长TiO2晶种条件为将亲水处理后的硅片浸于浓度为0.05～1mol/L的钛酸四丁酯的异丙醇溶液中进行提拉或旋涂，提拉的速度是1～10mm/s，重复提拉5～30次，旋涂的速度为500～7000转/分钟，最后将上述样品在450～500℃马弗炉中煅烧约30～60min。
进一步的，步骤(3)所述的水热合成条件为80～200℃的温度下，在装有10～20mL去离子水、6～17mL浓盐酸(质量分数37％)和0.5～5mL钛酸四丁酯的反应釜中处理2～19h，然后取出样品用氮气吹干。
进一步的，步骤(4)所述的在TiO2纳米棒上沉积导电PPY纳米粒子，是指利用原位氧化法在TiO2纳米棒上沉积PPY导电高分子颗粒，反应条件为：将0.01～0.06g的FeCl3、50～150uL吡咯、5～10mL超纯水置于烧杯中，构成反应溶液。将面积为1.5cm×1.0cm的表面生长有TiO2纳米棒的硅片置于反应液中，保持室温下搅拌10～30min，得到Si/TiO2/PPY三维仿生复合材料。
进一步的，三维Si/TiO2/PPY复合材料用作光催化降解有机污染物的应用，将1.5cm×1.0cm面积的三维Si/TiO2/PPY复合材料放置于5mL的亚甲基蓝溶液，浓度为1.0×10-5mol/L，然后将其置于暗处1h让其达到吸附-解吸平衡，之后用光源对溶液进行光照，对亚甲基蓝进行降解。同时，该种复合材料并不局限于应用在光催化降解有机污染物，也适合于其他光催化领域，及光电转化器件、太阳能电池等领域。
本发明具有以下优越性：
(1)在硅锥表面层级有序组装TiO2纳米棒和PPY纳米粒子，形成三维的仿生复合结构，具有优异的消反射性能。
(2)硅锥侧壁与TiO2纳米棒接触及TiO2纳米棒与PPY纳米粒子接触，能形成双层纳米P/N异质结结构，有效的分离光生载流子，减小电子-空穴对的复合，具有优异的光电转化效率。
(3)三维的Si/TiO2/PPY复合材料具有高的比表面积，增加了表面有效的催化活性点，在光催化降解污染物方面具有一定的使用价值。
(4)该种三维的Si/TiO2/PPY复合材料制备方法简便，条件温和易控，对反应设备要求低，同时使用过程中利于回收再使用，满足大规模生产的要求。
附图说明
图1为实施例2中经过碱液各向异性刻蚀的单晶硅扫描电镜图片；
图2为实施例2中在硅锥表面组装TiO2纳米棒扫描电镜图片。
图3为实施例2中在硅锥表面层级组装得到的三维Si/TiO2/PPY复合材料扫描电镜图片。
具体实施方式
实施例1：
步骤一：硅锥的制备
配置pH＝13的KOH溶液100mL，向其中添加25mL异丙醇，将硅片置于溶液中，70℃下刻蚀30min，在刻蚀的过程中用机械搅拌的方式连续搅拌。刻蚀完后，硅片用蒸馏水冲洗，然后用氮气吹干。
步骤二：硅锥侧壁生长TiO2晶种
将步骤一中得到的呈硅锥结构的硅片置于NH3H2O、H2O2和H2O的混合溶液中，体积比为1:1:5，温度为80℃，加热时间30min。然后，浸于浓度为0.075mol/L的钛酸四丁酯的异丙醇溶液中进行提拉，提拉的速度是2mm/s，重复提拉20次，最后将上述样品在450℃马弗炉中煅烧约30min。
步骤三：TiO2晶种诱导TiO2纳米棒的制备
将步骤二中得到的表面附有TiO2晶种的硅片置于水热条件下进行生长TiO2纳米棒。水热合成条件为130℃的温度下，在装有10mL去离子水、10mL浓盐酸(质量分数37％)和0.5mL钛酸四丁酯的反应釜中处理8h，然后取出样品用氮气吹干。
步骤四：TiO2纳米棒表面原位制备PPY纳米粒子
利用原位氧化法在步骤三中所得到的TiO2纳米棒上沉积PPY纳米粒子。反应条件为：将0.03g的FeCl3、112.8uL吡咯、6mL超纯水置于烧杯中，构成反应溶液；将面积为1.5cm×1.0cm表面生长有TiO2纳米棒的硅片置于反应液中，保持室温下搅拌25min，反应结束后，将样品取出后用大量水冲洗，得到三维Si/TiO2/PPY复合材料。
上述得到的三维Si/TiO2/PPY复合材料中，PPY纳米粒子的平均粒径是35nm，TiO2纳米棒的平均直径为83nm，平均高度为818nm，硅锥的平均高度4.1μm。。通过紫外漫反射测试可知，Si/TiO2/PPY层级复合材料表现出优秀的消反射性能，光反射率为9％；通过光电流测试，Si/TiO2/PPY层级复合材料的光电流约分别为纯TiO2纳米棒和纯PPY的11倍和7倍；通过模拟太阳光环境，Si/TiO2/PPY层级复合材料光催化降解亚甲基蓝，结合紫外分光光度计考察亚甲基蓝浓度随时间的变化，在6.5h内将染料亚甲基蓝完全降解，且降解效率高于纯TiO2纳米棒和纯PPY。
实施例2：
步骤一：硅锥的制备
配置pH＝13的KOH溶液100mL，向其中添加25mL异丙醇，将硅片置于溶液中，70℃下刻蚀30min，在刻蚀的过程中用机械搅拌的方式连续搅拌。刻蚀完后，硅片用蒸馏水冲洗，然后用氮气吹干。
步骤二：硅锥侧壁生长TiO2晶种
将步骤一中得到的呈硅锥结构的硅片置于NH3H2O、H2O2和H2O的混合溶液中，体积比为1:1:5，温度为80℃，加热时间30min。然后，浸于浓度为0.075mol/L的钛酸四丁酯的异丙醇溶液中进行提拉，提拉的速度是2mm/s，重复提拉20次，最后将上述样品在450℃马弗炉中煅烧约30min。
步骤三：TiO2晶种诱导TiO2纳米棒的制备
将步骤二中得到的表面附有TiO2晶种的硅片置于水热条件下进行生长TiO2纳米棒。水热合成条件为130℃的温度下，在装有10mL去离子水、10mL浓盐酸(质量分数37％)和0.5mL钛酸四丁酯的反应釜中处理8h，然后取出样品用氮气吹干。
步骤四：TiO2纳米棒表面原位制备PPY纳米粒子
利用原位氧化法在步骤三中所得到的TiO2纳米棒上沉积PPY纳米粒子。反应条件为：将0.03g的FeCl3、112.8uL吡咯、6mL超纯水置于烧杯中，构成反应溶液；将面积为1.5cm×1.0cm表面生长有TiO2纳米棒的硅片置于反应液中，保持室温下搅拌15min，反应结束后，将样品取出后用大量水冲洗，得到三维Si/TiO2/PPY复合材料。
上述得到的三维Si/TiO2/PPY复合材料中，PPY纳米粒子的平均粒径是19nm，TiO2纳米棒的平均直径为83nm，平均高度为818nm，硅锥的平均高度4.1μm。。通过紫外漫反射测试可知，Si/TiO2/PPY层级复合材料表现出优秀的消反射性能，光反射率为6％；通过光电流测试，Si/TiO2/PPY层级复合材料的光电流约分别为纯TiO2纳米棒和纯PPY的15倍和10倍；通过模拟太阳光环境，Si/TiO2/PPY层级复合材料光催化降解亚甲基蓝，结合紫外分光光度计考察亚甲基蓝浓度随时间的变化，在5.5h内将染料亚甲基蓝完全降解，且降解效率高于纯TiO2纳米棒和纯PPY。
实施例3：
步骤一：硅锥的制备
配置pH＝14的KOH溶液100mL，向其中添加25mL异丙醇，将硅片置于溶液中，50℃下刻蚀15min，在刻蚀的过程中用机械搅拌的方式连续搅拌。刻蚀完后，硅片用蒸馏水冲洗，然后用氮气吹干。
步骤二：硅锥侧壁生长TiO2晶种
将步骤一中得到的呈硅锥结构的硅片置于NH3H2O、H2O2和H2O的混合溶液中，体积比为1:1:5，温度为90℃，加热时间30min。然后，浸于浓度为0.1mol/L的钛酸四丁酯的异丙醇溶液中进行提拉，提拉的速度是2mm/s，重复提拉10次，最后将上述样品在500℃马弗炉中煅烧约30min。
步骤三：TiO2晶种诱导TiO2纳米棒的制备
将步骤二中得到的表面附有TiO2晶种的硅片置于水热条件下进行生长TiO2纳米棒。水热合成条件为120℃的温度下，在装有10mL去离子水、10mL浓盐酸(质量分数37％)和0.5mL钛酸四丁酯的反应釜中处理8h，然后取出样品用氮气吹干。
步骤四：TiO2纳米棒表面原位制备PPY纳米粒子
利用原位氧化法在步骤三中所得到的TiO2纳米棒上沉积PPy纳米粒子。反应条件为：将0.03g的FeCl3、112.8uL吡咯、6mL超纯水置于烧杯中，构成反应溶液；将面积为1.5cm×1.0cm表面生长有TiO2纳米棒的硅片置于反应液中，保持室温下搅拌10min，反应结束后，将样品取出后用大量水冲洗，得到三维Si/TiO2/PPY复合材料。
上述得到的三维Si/TiO2/PPY复合材料中，PPY纳米粒子的平均粒径是12nm，TiO2纳米棒的平均直径为83nm，平均高度为818nm，硅锥的平均高度3.3μm。。通过紫外漫反射测试可知，Si/TiO2/PPY层级复合材料表现出优秀的消反射性能，光反射率为4％；通过光电流测试，Si/TiO2/PPY层级复合材料的光电流约分别为纯TiO2纳米棒和纯PPY的21倍和14倍；通过模拟太阳光环境，Si/TiO2/PPY层级复合材料光催化降解亚甲基蓝，结合紫外分光光度计考察亚甲基蓝浓度随时间的变化，在5h内将染料亚甲基蓝完全降解，且降解效率高于纯TiO2纳米棒和纯PPY。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的人员来说，在不脱离本发明构思的前提下，还可做出很多简单推演或替换，都应当视为属于本发明的保护范围。

Claims (8)

1.一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料，其特征在于：以单晶硅(Si)、二氧化钛(TiO2)和聚吡咯(PPY)有序层级组成(Si/TiO2/PPY)，Si是表面具有锥形微结构的100型单晶硅，为P型半导体，硅锥结构形状为四方锥，高度为4～10μm，紧密排列；TiO2是金红石相的TiO2纳米棒，为N型半导体，四棱柱形状，高度为500～4000nm，直径为40～250nm，有序垂直生长在硅锥的侧壁上。PPY是聚吡咯纳米粒子，为P型半导体，粒径为10～60nm，均匀生长在TiO2纳米棒表面。Si/TiO2/PPY三维仿生复合材料中的Si与TiO2界面、TiO2与PPY界面形成双P/N异质结，可以高效分离光生电荷，同时具有三维的仿生复合结构，可以有效降低入射光在表面的反射率。
2.一种制备如权利要求1所述一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料的方法，其特征是，包括以下步骤：
(1)首先用一定浓度的碱液，在搅拌的条件下，对硅片进行各向异性刻蚀，在硅片表面形成紧密排列的四方锥形貌；
(2)然后将步骤(1)刻蚀后的硅片进行亲水处理，在其表面生长TiO2晶种，并置于马弗炉内煅烧一段时间后自然冷却；
(3)再将步骤(2)中所得到的表面具有TiO2晶种的硅片置于反应釜中，采用水热合成的方法在硅锥的侧壁上生长TiO2纳米棒；
(4)最后在步骤(3)中得到的TiO2纳米棒上沉积导电PPY纳米粒子，得到三维仿生Si/TiO2/PPY。
3.根据权利要求2所述的制备方法，其特征在于：步骤(1)所述的碱液为氢氧化钾、四甲基氢氧化铵、氢氧化钠、氨水、EDP(乙二胺、邻苯二酚和水的混合溶液)，碱液的PH＝12～14，刻蚀温度50～90℃，刻蚀时间5～60min，搅拌的方式为机械搅拌磁力搅拌。
4.根据权利要求2所述的制备方法，其特征在于：步骤(2)所述的亲水处理操作为将步骤(1)得到的硅片置于NH3H2O、H2O2和H2O的混合溶液中，体积比为1:1:5，温度为90℃，加热时间30min。
5.根据权利要求2所述的制备方法，其特征在于：步骤(2)所述的生长TiO2晶种条件为将亲水处理后的硅片浸于浓度为0.05～1mol/L的钛酸四丁酯的异丙醇溶液中进行提拉或旋涂，提拉的速度是1～10mm/s，重复提拉5～30次，旋涂的速度是500～7000转/min，最后将上述样品在450～500℃马弗炉中煅烧约30～60min。
6.根据权利要求2所述的制备方法，其特征在于：步骤(3)所述的水热合成条件为80～200℃的温度下，在装有10～20mL去离子水、6～17mL浓盐酸(质量分数37％)和0.5～5mL钛酸四丁酯的反应釜中处理2～19h，然后取出样品用氮气吹干。
7.根据权利要求2所述的制备方法，其特征在于：步骤(4)所述的在TiO2纳米棒上沉积导电PPY纳米粒子，是指利用原位氧化法在TiO2纳米棒上沉积PPY导电高分子颗粒，反应条件为：将0.01～0.06g的FeCl3、50～150uL吡咯、5～10mL超纯水置于烧杯中，构成反应溶液。将面积为1.5cm×1.0cm的表面生长有TiO2纳米棒的硅片置于反应液中，保持室温下搅拌10～60min，得到Si/TiO2/PPY三维仿生复合材料。
8.如权利要求1所述一种基于层级组装的硅-二氧化钛-聚吡咯三维仿生复合材料用作光催化降解有机污染物的应用，其特征在于：将1.5cm×1.0cm面积的三维Si/TiO2/PPY复合材料放置于5mL的亚甲基蓝溶液，浓度为1.0×10-5mol/L，然后将其置于暗处1h让其达到吸附-解吸平衡，之后用光源对溶液进行光照，对亚甲基蓝进行降解。同时，该种复合材料并不局限于应用在光催化降解有机污染物，也适合于其他光催化领域，及光电转化器件、太阳能电池等领域。
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