CN105529257A - 一种优化堆叠栅介质与锗界面的方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 17
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052593 corundum Inorganic materials 0.000 abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000002957 persistent organic pollutant Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Abstract
一种优化堆叠栅介质与锗界面的方法，涉及堆叠栅介质。对Ge衬底进行清洗，去除有机污染物、氧化物和金属杂质等物质；将清洗后的Ge衬底放入原子层沉积系统中，沉积一层Al2O3薄膜，实现对Ge衬底的表面钝化，获得Al2O3/Ge结构；将Al2O3/Ge结构样品进行湿法退火处理，实现Al2O3/Ge界面态的优化；在处理后的样品上生长HfO2高K介质；将获得的样品正面固定在掩膜板上，放入磁控溅射机中沉积金属层作为上电极，在样品Ge衬底的背面溅射金属层作为背电极，即得MOS结构器件，实现优化堆叠栅介质与锗界面。可优化高K介质/Ge界面态，并能维持钝化层的热稳定性，可减小工艺流程和时间成本。
Description
技术领域
本发明涉及堆叠栅介质，尤其是涉及一种优化堆叠栅(HfO2/Al2O3)介质与锗界面的方法。
背景技术
随着半导体技术的发展，晶体管的特征尺寸不断等比例缩小[1]，栅极介质材料SiO2的厚度越来越接近其极限物理厚度，采用HfO2等高K介质代替传统的SiO2栅介质已成为发展的必然。此外，锗衬底由于具有较大的空穴迁移率(Si的四倍)，基于这些优点，锗衬底高K介质栅MOSFET器件已成为业内人士的研究热点[2-3]。但HfO2/Ge界面态密度过大已成为锗衬底MOSFET器件进一步发展的一个重要问题[4-5]。研究人员已多方面尝试采用湿法退火[6-7]、GeO2钝化、GeOxNy钝化及Si表面钝化等手段实现HfO2/Ge界面性能的优化。
此外，Al2O3因为具有较高的介电常数9和较好的阻隔效果而被广泛应用于Ge表面钝化领域。目前为止，HfO2/Al2O3/Ge结构堆叠栅的研究已经取得了一定的进展[8-9]，但Al2O3/Ge的界面态仍有进一步优化的空间。
参考文献：
[1]奥地利,艾罗拉,张兴.用于VLSI模拟的小尺寸MOS器件模型:理论与实践[J].1999。
[2]RaviPillarisetty,Academicandindustryresearchprogressingermaniumnanodevices[J],NATURE,2011,479:324-328。
[3]INTERNATIONALTECHNOLOGYROADMAPFORSEMICONDUCTORS[J]，2011EDITIO。
[4]M.Houssa,G.Pourtois,M.Caymax,etal.First-principlesstudyofthestructuralandelectronicpropertiesof(100)Ge/Ge(M)O[sub2]interfaces(M＝Al,La,orHf)[J],Appl.Phys.Lett.2008,92,242101。
[5]KojiKita,ShoSuzuki,HideyukiNomura,etal.DirectEvidenceofGeOVolatilizationfromGeO2/GeandImpactofItsSuppressiononGeO2/GeMetal–Insulator–SemiconductorCharacteristics[J].Jpn.J.Appl.Phys.200847:2349。
[6]GuanzhouLiu,ChengLi,HongkaiLai,etal.GeIncorporationinHfO2DielectricDepositedonGeSubstrateduringDry/WetThermalAnnealing[J],J.Electrochem.Soc.,2010,157:6H603-H606。
[7]Xu,J.P,Lai,P.T,Li,C.X,etal.ImprovedelectricalpropertiesofGermaniumMOScapacitorswithgatedielectricgrowninwet-NOambient[J],ElectronDeviceLetters,IEEE,2006,27:439-441。
[8]ShankarSwaminathan,MichaelShandalov,YasuhiroOshima,etal.BilayermetaloxidegateinsulatorsforscaledGe-channelmetal-oxide-semiconductordevices[J],Appl.Phys.Lett.2010,96:082904。
[9]S.Mather,N.Sedghi,M.Althobaiti,etal.LowEOTGeO2/Al2O3/HfO2onGesubstrateusingultrathinAldeposition[J],MicroelectronicEngineering2013,109:126–128。
发明内容
本发明的目的在于针对目前锗MOS器件中高K介质HfO2/Ge界面态密度过大，造成沟道迁移率下降、栅极漏电流变大等问题，提供既能优化界面又可以有效阻隔界面互扩散，可获得较小界面态密度(Dit)和较小等效氧化层厚度(EOT<1nm)的锗沟道MOS堆叠栅结构的一种优化堆叠栅介质与锗界面的方法。
本发明包括以下步骤：
1)对Ge衬底进行清洗，去除有机污染物、氧化物和金属杂质等物质；
2)将清洗后的Ge衬底放入原子层沉积系统(ALD)中，沉积一层Al2O3薄膜，实现对Ge衬底的表面钝化，获得Al2O3/Ge结构；
3)将步骤2)得到的Al2O3/Ge结构样品进行湿法退火处理，实现Al2O3/Ge界面态的优化；
4)在步骤3)处理后的样品上生长HfO2高K介质；
5)将步骤4)中获得的样品正面固定在掩膜板上，放入磁控溅射机中沉积金属层作为上电极，在样品Ge衬底的背面溅射金属层作为背电极，即得到MOS结构器件，实现优化堆叠栅介质与锗界面。
在步骤1)中，所述清洗可采用如下方法：先对Ge片进行有机清洗，依次在丙酮、乙醇、去离子水中各超声清洗10min，去除有机污染物；再用去离子水冲洗后放入盐酸溶液中漂洗4min，去除表面氧化物层；然后用去离子水冲洗后放入氢氟酸溶液中漂洗30s；经过去离子水冲洗，最后用N2吹干；所述盐酸溶液中按体积比HCl∶H2O＝1∶4；所述氢氟酸溶液中按体积比HF∶H2O＝1∶50。
在步骤4)中，所述生长HfO2高K介质可采用原子层沉积法。
在步骤5)中，所述作为上电极的金属层的厚度可为300nm。
本发明的技术方案是首先在清洗后的Ge衬底上采用原子层沉积系统(ALD)沉积一层超薄的Al2O3钝化层，接着对Al2O3表面钝化后的Ge衬底进行湿法退火。退火完成后在ALD系统中进行HfO2介质的沉积，获得界面较好的HfO2/Al2O3/Ge堆叠栅结构。
本发明是采用原子层沉积系统获得HfO2/Al2O3/Ge结构的堆叠栅，并采用湿法退火的方式实现Al2O3/Ge界面态的性能优化。这种方法可以优化高K介质/Ge界面态，并能维持钝化层的热稳定性，是一种具有广阔应用空间的新方法。尤其是原子层沉积系统(ALD)原位湿法退火法，该方法可以大大减小工艺的流程和时间成本。这一方法可实现锗MOSFET器件的产业化应用。
附图说明
图1为本发明脉冲湿法退火优化界面态并制备HfO2/Al2O3/Ge结构堆叠栅MOS器件的流程示意图。
具体实施方式
以下实施例将结合附图对本发明作进一步的说明。
实施例1：图1给出本发明脉冲湿法退火优化界面态并制备HfO2/Al2O3/Ge结构堆叠栅MOS器件的流程示意图。其中，1为Ge衬底，2为原子层沉积法制备的Al2O3超薄钝化层，3为经过脉冲湿法退火处理的Al2O3超薄钝化层，4为原子层沉积法制备的HfO2栅介质层，5为金属电极层。首先对Ge衬底进行清洗：先对Ge片进行有机清洗，溶液(先丙酮，后乙醇，最后去离子水)中各超声10min，去除有机污染物；用去离子水冲洗后放入盐酸溶液中(HCl∶H2O＝1∶4)漂洗4min，去除表面氧化物层；用去离子水冲洗后放入氢氟酸溶液中(HF∶H2O＝1∶50)漂洗30s；经过去离子水冲洗，最后用N2吹干(见图1(a))。
将清洗后的Ge片迅速放入原子层沉积系统(ALD)中，用ALD沉积一层超薄的Al2O3薄膜(见图1(b))；接着，对Al2O3钝化后的样品进行湿法退火处理(见图1(c))；然后，使用ALD在样品表面沉积一定厚度的HfO2薄膜(见图1(d))。
最后，将处理过的样品固定在掩膜板上，用磁控溅射机沉积一层300nm左右的金属电极作为上电极，在Si衬底背面溅射金属作为背电极，得到MOS器件结构(见图1(e))。
本发明首先使用原子层沉积法在锗衬底表面沉积薄层Al2O3钝化层，并采用湿法退火的方式对Al2O3/Ge进行界面优化，最后沉积HfO2介质层获得堆叠栅结构。本发明是一种与硅标准工艺相兼容的工艺方法。
Claims (5)
1.一种优化堆叠栅介质与锗界面的方法，其特征在于包括以下步骤：
1)对Ge衬底进行清洗，去除有机污染物、氧化物和金属杂质等物质；
2)将清洗后的Ge衬底放入原子层沉积系统(ALD)中，沉积一层Al2O3薄膜，实现对Ge衬底的表面钝化，获得Al2O3/Ge结构；
3)将步骤2)得到的Al2O3/Ge结构样品进行湿法退火处理，实现Al2O3/Ge界面态的优化；
4)在步骤3)处理后的样品上生长HfO2高K介质；
5)将步骤4)中获得的样品正面固定在掩膜板上，放入磁控溅射机中沉积金属层作为上电极，在样品Ge衬底的背面溅射金属层作为背电极，即得到MOS结构器件，实现优化堆叠栅介质与锗界面。
2.如权利要求1所述一种优化堆叠栅介质与锗界面的方法，其特征在于在步骤1)中，所述清洗采用如下方法：先对Ge片进行有机清洗，依次在丙酮、乙醇、去离子水中各超声清洗10min，去除有机污染物；再用去离子水冲洗后放入盐酸溶液中漂洗4min，去除表面氧化物层；然后用去离子水冲洗后放入氢氟酸溶液中漂洗30s；经过去离子水冲洗，最后用N2吹干。
3.如权利要求2所述一种优化堆叠栅介质与锗界面的方法，其特征在于所述盐酸溶液中按体积比HCl∶H2O＝1∶4；所述氢氟酸溶液中按体积比HF∶H2O＝1∶50。
4.如权利要求1所述一种优化堆叠栅介质与锗界面的方法，其特征在于在步骤4)中，所述生长HfO2高K介质采用原子层沉积法。
5.如权利要求1所述一种优化堆叠栅介质与锗界面的方法，其特征在于在步骤5)中，所述作为上电极的金属层的厚度为300nm。
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| CN106711021A (zh) * | 2016-11-29 | 2017-05-24 | 东莞市广信知识产权服务有限公司 | 一种硅锗基mos表面处理与介质生长方法 |
| CN111628000A (zh) * | 2020-05-06 | 2020-09-04 | 武汉大学 | 激光冲击制备亚纳米级沟道背电极场效应晶体管的方法 |
| CN112259613A (zh) * | 2020-10-26 | 2021-01-22 | 上海交通大学 | 提高锗Ge MOS电容器件性能的方法、系统及设备 |
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