CN103295890B - 淀积在锗基或三五族化合物基衬底上的栅介质的处理方法 - Google Patents
淀积在锗基或三五族化合物基衬底上的栅介质的处理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 31
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 26
- 150000001875 compounds Chemical class 0.000 title claims abstract description 22
- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 41
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 25
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000011109 contamination Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000013256 coordination polymer Substances 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 125000004437 phosphorous atom Chemical group 0.000 claims 1
- 125000004434 sulfur atom Chemical group 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
本发明公开了一种淀积在锗基或三五族化合物基衬底上的栅介质的处理方法，属于半导体器件领域。该方法具体包括：在锗基或三五族化合物基衬底上淀积高K栅介质后，对高K栅介质进行氟等离子体处理，并在处理过程中施加引导电场，电场使氟离子加速到栅介质表面时能量达到5～50eV，氟等离子体漂移到栅介质中，高K介质中的氟离子的密度与高K介质中氧原子密度比为0.01～0.15∶1。本发明提高了栅介质质量和钝化缺陷效率，减小界面态密度，实现了锗基和三五族化合物基MOS器件性能地提高。
Description
技术领域
本发明属于半导体器件领域，具体涉及一种淀积在锗基或三五族化合物基衬底上的栅介质的处理方法。
背景技术
随着硅基金属-氧化物-半导体场效应晶体管(MOSFET)几何尺寸缩小到纳米尺度，传统通过缩小器件尺寸提升性能和集成度的方法正面临物理和技术的双重极限考验。为了进一步提高器件性能，有效方法之一是引入高迁移率沟道材料。
锗和三五族化合物半导体由于高的空穴和电子移率，被认为是下一代实现高速CMOS电路的优选材料。但是目前锗基和三五族化合物基MOS器件的制备技术还不成熟，将高K栅介质直接淀积在衬底上后，存在界面处界面态密度高、界面质量差的缺陷，影响了锗基和三五族化合物基MOS器件的性能。
发明内容
为了提高锗基和三五族化合物基MOS器件性能，本发明提出了一种淀积在锗基或三五族化合物基衬底上的栅介质的处理方法。
本发明的具体技术方案如下：
一种淀积在锗基或三五族化合物基衬底上的栅介质的处理方法，具体包括：在锗基或三五族化合物基衬底上淀积高K栅介质后，对高K栅介质进行氟等离子体处理，并在处理过程中施加引导电场，电场使氟离子加速到栅介质表面时能量达到5～50eV，氟等离子体漂移到栅介质中，高K介质中的氟离子的密度与高K介质中氧原子密度比为0.01～0.15∶1。
上述方法中，在淀积栅介质前，可对锗基或三五族化合物基衬底表面进行清洗，以去除表面沾污和自然氧化层。
上述方法中，淀积栅介质前，可对锗基或三五族化合物基衬底进行表面钝化处理，钝化处理的方法有，淀积钝化层，如Si，SiO2，Al2O3，AlNx，GeNx，GeO2，Y2O3，La2O3，CeO2等；也可进行单原子层钝化处理，S、N和P等原子钝化处理。
上述方法中，淀积栅介质可以是HfO2，Al2O3，ZrO2，TiO2，TaO2，ZrO2，Y2O3，La2O3，GeO2，GeNx等，但不局限于上述栅介质材料。
上述方法中，产生氟等离子体的气体可以是CF4，CHF3，CH2F2，CH3F，但不局限于上述含氟气体。反应气体可以是以上气体中的一种，或者两种、两者两种以上气体的组合，含氟气体流量为20～100sccm；可以在反应气体中添加Ar，He等惰性气体，流量为0～100sccm；为了防止碳等污染，可在反应气体中添加O2，添加的O2与含氟气体(如CF4)的流量比例为1∶20～；1∶5。
上述方法中，产生氟等离子体的设备可以是感应耦合等离子体(ICP)设备，也可以是其它任何可以产生等离子体的设备。
上述方法中，氟等离子体处理过程中的气压为10～200mTorr；用于产生等离子体的功率一般为15～60W；等离子体处理时间为30s～60min。
上述方法中，氟等离子体处理过程中所施加的引导电场可以利用现有的等离子体处理设备来产生所述引导电场，例如利用等离子体腔设备(如ICP刻蚀系统)中的RIE(反应离子刻蚀)功率产生引导电场。
上述方法中，氟等离子体处理后可以进行退火，退火温度与时间分别为350～550℃，30s～5min。然后进行后续工艺以制备MOS电容或器件。
本发明的锗基衬底可以是体Ge衬底、GOI衬底或任何表面含有Ge外延层的衬底，也可以是含锗的化合物半导体衬底，比如SiGe，GeSn等。本发明的三五族化合物基衬底可以是GaAs、InP、GaSb、InGaAs等，也可以是其它三五族化合物衬底。
本发明优点如下：本发明对栅介质采用氟等离子体处理，实现衬底与栅介质界面处缺陷和栅介质中缺陷的钝化，但如直接采用氟等离子体处理，氟等离子体在等离子体源处产生，通过扩散运输到栅介质及界面处，在扩散过程中由于碰撞会发生使等离子体活性失效，运输效率低，本发明进一步在处理过程中施加引导电场，引导氟等离子体漂移向栅介质，实现了高K介质中的氟离子的密度与高K介质中氧原子的密度比为0.01～0.15∶1，从而提高了栅介质质量和钝化缺陷效率，减小界面态密度，提高界面质量。
附图说明
图1所示实施例表面钝化方法示意图；
图中：1-半导体锗衬底；2-HfO2。
具体实施方式
以下结合附图和体锗衬底，通过具体的实施例对本发明所述的方法做进一步描述。
步骤1.对锗衬底进行清洗，并清除表面氧化层，如图1(a)所示；
步骤2.锗衬底上淀积栅介质。其中栅介质可以是HfO2，Al2O3，ZrO2，TiO2，TaO2，ZrO2，Y2O3，La2O3，GeO2，GeNx等，可以采用溅射、CVD、ALD、PLD、MBE等方法；本实施优选例为HfO2，栅介质厚度在2～20nm之间，如5nm，如图1(b)所示；
步骤3.将淀积有HfO2的锗衬底放入等离子体腔，利用反应气体产生等离子体并对锗片进行等离子体处理，并在等离子体处理的同时施加引导电场，引导等离子体漂移向栅介质，使离子加速到栅介质表面时，能量为5～50eV。产生氟等离子体的气体可以为CF4，CHF3，CH2F2，CH3F，但不局限于上述含氟气体。反应气体可以是以上气体中的一种，或者两种、两者两种以上气体的组合，含氟气体流量为20～100sccm；并可以在含氟气体中添加Ar，He等惰性气体，流量为0～100sccm；为了防止碳等污染，可在反应气体中添加O2，添加的O2与含氟气体(如CF4)的比例为1∶20～；1∶5。本实施优选例为用CF4与O2混合气体。CF4与O2的流量为50sccm、5sccm。产生氟等离子体的设备可以是感应耦合等离子体(ICP)设备，也可以是其它任何可以产生等离子体的设备。本实施优选例采用感应耦合等离子体(ICP)设备。等离子体处理时的气压为10～200mTorr，本实施优选例为100mTorr；等离子体处理的功率为15～60W，本实施优选例为施加20W的ICP功率；本实施例利用ICP刻蚀系统中的RIE功率产生引导电场，施加的RIE功率为10W；等离子体处理的时间为30s～60min，如3min，如图1(c)所示；
对于HfO2介质，其理想的氧原子密度为5.55×1022cm-3，最终进入到HfO2中的氟离子密度为5.55×1020～8.3×1021cm-3；而对于Al2O3介质，其理想的氧原子密度为7.02×1022cm-3，最终进入到Al2O3中的氟离子密度为7.0×1020～1.0×1022cm-3。
步骤4.对等离子体处理后的基片进行退火处理。退火温度与时间分别为350～550℃，30s～5min。本实施优选例为500℃，60s。
以上通过特定实施例详细描述了本发明。本领域的技术人员应当理解，以上所述仅为本发明的特定实施例，在不脱离本发明实质的范围内，可以使用其它材料实现本发明的钝化效果，亦可以采用同样方法在实施例中锗衬底之外的其它半导体衬底上获得同样的效果，制备方法均不限于实施例中所公开的内容，凡依本发明权利要求所做的均等变化与修饰，皆应属本发明的涵盖范围。
Claims (8)
1.一种淀积在锗基或三五族化合物基衬底上的栅介质的处理方法，包括：在锗基或三五族化合物基衬底上淀积高K栅介质后，对高K栅介质进行氟等离子体处理，并在处理过程中施加引导电场，电场使氟离子加速到栅介质表面时能量达到5～50eV，氟等离子体漂移到高K栅介质中，高K栅介质中的氟离子的密度与高K介质中氧原子密度比为0.01～0.15：1。
2.如权利要求1所述的方法，其特征在于，在淀积高K栅介质前，对锗基或三五族化合物基衬底表面进行清洗，以去除表面沾污和自然氧化层。
3.如权利要求1所述的方法，其特征在于，淀积高K栅介质前，对锗基或三五族化合物基衬底进行表面钝化处理，钝化处理的方法有，淀积钝化层Si、SiO2、Al2O3、AlNx、GeNx、GeO2、Y2O3、La2O3或CeO2；或者进行单原子S、N或P原子钝化处理。
4.如权利要求1所述的方法，其特征在于，高K栅介质为HfO2、Al2O3、ZrO2、TiO2、TaO2、Y2O3、La2O3或GeO2。
5.如权利要求1所述的方法，其特征在于，产生氟等离子体的含氟气体是CF4、CHF3、CH2F2或CH3F中的一种，或者两种、两种以上气体的组合，含氟气体流量为20～100sccm；或者在含氟气体中添加Ar、He惰性气体，流量为0～100sccm；或者在含氟气体中添加O2，添加的O2与含氟气体的流量比例为1:20～1:5。
6.如权利要求1所述的方法，其特征在于，产生氟等离子体的设备是感应耦合等离子体ICP设备，氟等离子体处理过程中的气压为10～200mTorr；用于产生等离子体的功率为15～60W；等离子体处理时间为30s～60min。
7.如权利要求1所述的方法，其特征在于，氟等离子体处理过程中所施加的引导电场是利用等离子体腔设备ICP刻蚀系统中的反应离子刻蚀RIE功率产生的电场。
8.如权利要求1所述的方法，其特征在于，氟等离子体处理后进行退火，退火温度为350～550℃，退火时间为30s～5min。
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