CN102629559B - 叠栅SiC-MIS电容的制作方法 - Google Patents
叠栅SiC-MIS电容的制作方法 Download PDFInfo
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- CN102629559B CN102629559B CN201210118317.6A CN201210118317A CN102629559B CN 102629559 B CN102629559 B CN 102629559B CN 201210118317 A CN201210118317 A CN 201210118317A CN 102629559 B CN102629559 B CN 102629559B
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CN201210118317.6A CN102629559B (zh) | 2012-04-20 | 2012-04-20 | 叠栅SiC-MIS电容的制作方法 |
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CN102629559B true CN102629559B (zh) | 2014-07-09 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730359A (zh) * | 2013-10-09 | 2014-04-16 | 西安电子科技大学 | 复合栅介质SiC MISFET器件的制作方法 |
CN104659114B (zh) * | 2015-01-28 | 2018-04-27 | 株洲南车时代电气股份有限公司 | Mos电容以及其制造方法 |
CN104810293B (zh) * | 2015-03-27 | 2017-10-20 | 西安电子科技大学 | 分区复合栅结构SiC DMISFET器件的制作方法 |
CN104966665B (zh) * | 2015-05-21 | 2018-08-28 | 西安电子科技大学 | 一种改善SiC与SiO2界面态密度的方法 |
CN106571300A (zh) * | 2015-10-12 | 2017-04-19 | 南京励盛半导体科技有限公司 | 一种碳化硅半导体器件的栅极介质层的制造工艺 |
CN105304498A (zh) * | 2015-10-15 | 2016-02-03 | 大连理工大学 | 一种降低SiO2/SiC界面态密度的方法 |
CN105355561B (zh) * | 2015-11-03 | 2018-04-10 | 大连理工大学 | 一种降低SiC MOS界面态密度的表面预处理方法 |
CN105428223B (zh) * | 2015-12-09 | 2017-12-29 | 西安电子科技大学 | 一种改善SiC/SiO2界面态密度的方法 |
CN110571140B (zh) * | 2019-09-10 | 2021-07-13 | 大连理工大学 | 提高SiC MOS器件性能的含氧元素的氧化后处理方法 |
CN111415866A (zh) * | 2020-03-31 | 2020-07-14 | 中国科学院微电子研究所 | 一种碳化硅mos电容器件及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101620990A (zh) * | 2009-07-17 | 2010-01-06 | 西安电子科技大学 | 一种减少4H-SiC中本征深能级缺陷的方法 |
CN101552192B (zh) * | 2009-04-14 | 2010-08-25 | 西安电子科技大学 | 一种制作SiC MOS电容的方法 |
CN102244108A (zh) * | 2011-06-23 | 2011-11-16 | 西安电子科技大学 | 复合介质层的SiCMOS电容及其制作方法 |
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KR101159070B1 (ko) * | 2003-03-11 | 2012-06-25 | 삼성전자주식회사 | 고유전율 산화막 형성방법, 이 방법으로 형성된 유전막이구비된 커패시터 및 그 제조방법 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101552192B (zh) * | 2009-04-14 | 2010-08-25 | 西安电子科技大学 | 一种制作SiC MOS电容的方法 |
CN101620990A (zh) * | 2009-07-17 | 2010-01-06 | 西安电子科技大学 | 一种减少4H-SiC中本征深能级缺陷的方法 |
CN102244108A (zh) * | 2011-06-23 | 2011-11-16 | 西安电子科技大学 | 复合介质层的SiCMOS电容及其制作方法 |
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Inventor after: Wang Dejun Inventor after: Liu Li Inventor after: Ma Xiaohua Inventor after: Yang Yintang Inventor before: Liu Li Inventor before: Wang Dejun Inventor before: Ma Xiaohua Inventor before: Yang Yintang |
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Effective date of registration: 20181130 Address after: 116024 No. 2 Ling Road, Ganjingzi District, Liaoning, Dalian Co-patentee after: Xidian University Patentee after: Dalian University of Technology Address before: No. 2 Taibai Road, Xi'an, Shaanxi Province, Shaanxi Patentee before: Xidian University |