CN105470236B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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Abstract
半导体装置具有:半导体元件(4);以及陶瓷电路基板(10),其安装有半导体元件。陶瓷电路基板(10)包含:陶瓷基板(11),其具有彼此相对的一个面和另一个面;金属电路板(12),其与陶瓷基板(11)的一个面接合,且与半导体元件电连接;以及金属散热板(13),其与陶瓷基板(11)的另一个面接合。金属电路板(12)的厚度大于金属散热板(13)的厚度。金属散热板(13)的与陶瓷基板(11)相反侧的面的表面积大于金属电路板(12)的与陶瓷基板(11)相反侧的面的表面积。由此,能够得到可抑制陶瓷基板的翘曲的半导体装置。
Description
技术领域
本发明涉及半导体装置,特别是涉及具有陶瓷电路基板的半导体装置。
背景技术
当前,在GTO(Gate Turn Off Thyristor)、IGBT(Insulated Gate BipolarTransistor)等功率半导体装置中,使用陶瓷电路基板。在该陶瓷电路基板中,陶瓷基板的一个面与金属电路板接合,另一个面与金属散热板接合。并且,在金属电路板处安装半导体元件,使散热器与金属散热板接合。
由于金属电路板的热膨胀率大于陶瓷基板的热膨胀率,因此由于半导体元件的使用时的热量,金属电路板比陶瓷基板更为膨胀。因此,在陶瓷基板处发生翘曲。
例如,在日本特开平10-200219号公报中,公开了下述电路基板,即,在陶瓷基板的一个面形成有金属电路板,在相反面形成有金属散热板。在该公报记载的电路基板中,金属电路板的厚度和金属散热板的厚度之比、以及陶瓷基板的外周缘与金属电路及金属散热板各自的外周缘之间的余量宽度设定于规定的数值范围。由此,在陶瓷基板处发生裂纹的情况减少。
在上述公报记载的电路基板中,未考虑金属电路板的电路图案。如果不考虑金属电路板的电路图案,单纯地使金属电路板的厚度变厚,则金属电路板由于半导体元件的使用时的热量而膨胀的量变大。因此,在陶瓷基板发生较大的翘曲。由此,有时陶瓷基板破损。
发明内容
本发明就是鉴于上述课题而提出的,其目的在于,提供一种能够抑制陶瓷基板的翘曲的半导体装置。
本发明的半导体装置具有:半导体元件;以及陶瓷电路基板,其安装有半导体元件。陶瓷电路基板包含:陶瓷基板,其具有彼此相对的一个面和另一个面;金属电路板,其与陶瓷基板的一个面接合,且与半导体元件电连接;以及金属散热板,其与陶瓷基板的另一个面接合。金属电路板的厚度大于金属散热板的厚度。金属散热板的与陶瓷基板相反侧的面的表面积大于金属电路板的与陶瓷基板相反侧的面的表面积。
根据本发明的半导体装置,形成电路图案的金属电路板的厚度大于金属散热板的厚度。并且,金属散热板的与陶瓷基板相反侧的面的表面积大于金属电路板的与陶瓷基板相反侧的面的表面积。因此,能够在金属电路板的体积和金属散热板的体积之间取得平衡。由此,能够抑制由在陶瓷基板处产生的热应力导致的陶瓷基板的翘曲。因此,能够抑制陶瓷基板破损。
通过结合附图进行理解的、与本发明相关的以下的详细说明,使本发明的上述及其它目的、特征、方案以及优点变得明确。
附图说明
图1是概略地表示本发明的实施方式1的半导体装置的俯视图。
图2是表示卸下图1所示的半导体装置的盖后的状态的俯视图。
图3是沿图2的III-III线的剖视图。
图4是概略地表示本发明的实施方式1的半导体装置的仰视图。
图5是概略地表示本发明的实施方式2的半导体装置的剖视图。
图6是概略地表示本发明的实施方式2的半导体装置的仰视图。
图7是概略地表示本发明的实施方式3的半导体装置的剖视图。
图8是概略地表示将散热器与本发明的实施方式4的半导体装置接合后的状态的剖视图。
图9是概略地表示对比例的半导体装置的剖视图。
图10是概略地表示现有的半导体装置的剖视图。
图11是表示现有技术以及实施例的半导体装置的热阻的图。
图12是表示金属电路板以及金属散热板的厚度和热阻之间的关系的图。
图13是概略地表示实施例的陶瓷电路基板的结构的图。
图14是表示金属电路板和金属散热板的体积比与翘曲量之间的关系的图。
图15是表示现有技术以及实施例的半导体装置的热阻的图。
具体实施方式
下面,基于附图,对本发明的实施方式进行说明。
(实施方式1)
首先,参照图1~图4,对本发明的实施方式1的半导体装置的结构进行说明。
参照图1~图3,本实施方式的半导体装置例如是功率模块。本实施方式的半导体装置主要具有:壳体1;盖2;电极端子3;半导体元件4;焊料5;配线6;封装树脂7;以及陶瓷电路基板10。此外,在图2中,为了易于观察,封装树脂7未图示。
主要参照图1,在壳体1的一个面侧安装有盖2。盖2是为了进行防尘及防水的结构。在壳体1的与一个面相对的另一个面侧,安装有陶瓷电路基板10。壳体1在陶瓷电路基板10的周围形成。壳体1例如由树脂形成。作为该树脂,例如使用PPS(聚苯硫醚)。
在壳体1安装有电极端子3。电极端子3从壳体1的一个面侧露出。另外,电极端子3从壳体1的内周侧露出。电极端子3包含:多个负极输入端子(N);正极输入端子(P);栅极端子(Pg);接地端子(Pe);交流电极端子(AC)。
主要参照图2及图3,半导体元件4安装于陶瓷电路基板10。半导体元件4经由焊料5与陶瓷电路基板10接合。半导体元件4例如是功率用半导体元件。具体地说,半导体元件4是IGBT(Insulated Gate Bipolar Transistor)、GTO(Gate Turn Off Thyristor)、MOSFET(Metal Oxide Semiconductor Field Effect Transistor)等。
半导体元件4优选由宽带隙材料形成。即,半导体元件4包含能带隙大于或等于2eV的材料。具体地说,半导体元件4是使用了碳化硅、氮化镓、金刚石等材料的半导体芯片。此外,碳化硅的能带隙是2.20~3.02eV,氮化镓的能带隙是3.39eV,金刚石的能带隙是5.47eV。
主要参照图3及图4,陶瓷电路基板10包含陶瓷基板11、金属电路板12、以及金属散热板13。陶瓷基板11具有彼此相对的一个面11a和另一个面11b。陶瓷基板11的一个面11a和另一个面11b之间的厚度例如大于或等于0.25mm而小于或等于0.635mm。具体地说,陶瓷基板11的厚度例如能够设为0.25mm、0.32mm、0.635mm。另外,陶瓷基板11的外形例如是长度80mm及宽度55mm。
陶瓷基板11例如由氮化硅材料、氮化铝材料、氧化铝材料形成。优选陶瓷基板11由氮化硅材料形成。即,优选陶瓷基板11包含氮化硅。
金属电路板12与陶瓷基板11的一个面11a接合。金属电路板12与半导体元件4电连接。金属电路板12经由焊料5与半导体元件4接合。金属电路板12具有电路图案。
金属电路板12的厚度能够与陶瓷基板11的厚度相应地进行变更。例如,在陶瓷基板11的厚度为0.25mm的情况下,能够将金属电路板12的厚度设为大于或等于0.6mm而小于或等于0.8mm。另外,例如在陶瓷基板11的厚度为0.32mm的情况下,能够将金属电路板12的厚度设为大于或等于0.8mm而小于或等于1.0mm。另外,例如在陶瓷基板11的厚度为0.635mm的情况下,能够将金属电路板12的厚度设为大于或等于1.0mm而小于或等于2.0mm。另外,金属电路板12的外形例如是长度74mm及宽度49mm。该金属电路板12的外形是除了电路图案以外的金属电路板12的外缘所形成的形状。
金属电路板12例如由铜、铝、银以及它们的合金形成。优选金属电路板12由铜形成。即,优选金属电路板12含有铜。
金属散热板13与陶瓷基板11的另一个面11b接合。金属散热板13例如由实心金属板形成。在该情况下,金属散热板13不具有图案。
金属散热板13的厚度能够与陶瓷基板11的厚度相应地进行变更。例如在陶瓷基板11的厚度为0.25mm的情况下,能够将金属散热板13的厚度设为大于或等于0.5mm而小于或等于0.7mm。另外,例如在陶瓷基板11的厚度为0.32mm的情况下,能够将金属散热板13的厚度设为大于或等于0.6mm而小于或等于0.9mm。另外,例如在陶瓷基板11的厚度为0.635mm的情况下,能够将金属散热板13的厚度设为大于或等于1.0mm而小于或等于2.0mm。另外,金属散热板13的外形例如是宽度78.4mm及长度53.4mm。该金属散热板13的外形是金属散热板13的外缘所形成的形状。
金属散热板13例如由铜、铝、银以及它们的合金形成。优选金属散热板13由铜形成。即,优选金属散热板13含有铜。
金属电路板12的厚度大于金属散热板13的厚度。金属散热板13的与陶瓷基板11相反侧的面的表面积大于金属电路板12的与陶瓷基板11相反侧的面的表面积。
优选金属电路板12的体积相对于金属散热板13的体积的比率大于或等于70%而小于或等于130%。另外,优选金属电路板12的体积大于金属散热板13的体积。另外,优选金属电路板12的厚度相对于金属散热板13的厚度的比率大于或等于6/5而小于或等于4/3。
在本实施方式中,壳体1支撑陶瓷基板11。壳体1包含伸出部1a。伸出部1a伸出至陶瓷基板11的一个面11a的正上方。伸出部1a搭载在一个面11a处。伸出部1a例如利用粘结剂固定于一个面11a。金属散热板13的至少一部分配置为,在从一个面11a和另一个面11b相对的方向观察时,与伸出部1a重叠。即,陶瓷基板11夹持在金属散热板13和伸出部1a之间。由金属散热板13经由陶瓷基板11支撑伸出部1a。伸出部1a也可以隔着半导体元件1设置在壳体1的两侧。金属散热板13也可以在壳体的两侧支撑伸出部1a。
再次主要参照图2及图3,配线6与金属电路板12和半导体元件4连接。另外,配线6与半导体元件4和电极端子3连接。另外,配线6与电极端子3和金属电路板12连接。因此,通过配线6,半导体元件4、电极端子3、金属电路板12彼此电连接。配线6例如由铝形成。
在由壳体1、盖2、陶瓷电路基板10包围的内部空间中,收容有半导体元件4、焊料5、配线6以及封装树脂7。在内部空间内,利用封装树脂7,对半导体元件4、焊料5以及配线6进行覆盖。封装树脂7例如是硅凝胶。
下面,对本实施方式的半导体装置的作用效果进行说明。
根据本实施方式的半导体装置,形成电路图案的金属电路板12的厚度大于金属散热板13的厚度。并且,金属散热板13的与陶瓷基板11相反侧的面的表面积大于金属电路板12的与陶瓷基板11相反侧的面的表面积。因此,能够在金属电路板12的体积和金属散热板13的体积之间取得平衡。即,通过对形成电路图案的金属电路板12的体积进行补偿,能够使金属散热板13的体积与金属散热板13的体积接近。由此,能够抑制由在陶瓷基板11处产生的热应力导致的陶瓷基板11的翘曲。因此,能够抑制陶瓷基板11破损。
另外,在本实施方式中,能够将金属电路板12及金属散热板13各自的厚度设为大于或等于0.6mm。由于现有的金属电路板12及金属散热板13各自的厚度为0.3mm左右,因此与它们相比,在本实施方式中,能够提高金属电路板12及金属散热板13各自的散热性。
另外,根据本实施方式的半导体装置,金属电路板12的体积相对于金属散热板13的体积的比率大于或等于70%而小于或等于130%。由此,能够抑制陶瓷基板11的翘曲。
另外,根据本实施方式的半导体装置,金属电路板12的体积大于金属散热板13的体积。由此,即使金属散热板13的与陶瓷基板11相反侧的面的表面积大于金属电路板12的与陶瓷基板11相反侧的面的表面积,也能够对陶瓷基板11向金属散热板13侧翘曲的情况进行抑制。
另外,根据本实施方式的半导体装置,金属电路板12的厚度相对于金属散热板13的厚度的比率大于或等于6/5而小于或等于4/3。由此,能够抑制陶瓷基板11的翘曲。
另外,根据本实施方式的半导体装置,陶瓷基板11含有氮化硅。由此,能够使陶瓷基板11难以破裂。
另外,根据本实施方式的半导体装置,金属电路板12及金属散热板13各自含有铜。由于铜的热传导率比铁的热传导率(80W/mK)高,因此能够提高金属电路板12及金属散热板13的散热性。另外,由于铜比银便宜,因此能够抑制金属电路板12及金属散热板13的成本。另外,由于铜加工性良好,因此能够提高金属电路板12及金属散热板13的生产率。
另外,根据本实施方式的半导体装置,半导体元件4能够含有能带隙大于或等于2eV的材料。在本实施方式的半导体装置中,通过使金属电路板12的厚度变厚,从而电感变小。因此,能够在高速通断时,降低在半导体元件4动作时产生的电涌电压。
另外,根据本实施方式的半导体装置,金属散热板13的至少一部分配置为,在从陶瓷基板11的一个面11a和另一个面11b相对的方向观察时,与伸出部1a重叠。由此,能够由金属散热板13对伸出部1a进行支撑。由此,能够降低由壳体1导致的向陶瓷基板11的应力。另外,壳体1向陶瓷基板11的安装变得容易。
(实施方式2)
对本发明的实施方式2的半导体装置进行说明。下面,只要不特别地进行说明,对与实施方式相同的结构标注相同的标号,不重复说明。这在下面的实施方式3及4中也是同样的。
参照图5及图6,实施方式2的半导体装置主要在金属散热板13具有凹部HP这一点上与实施方式1的半导体装置不同。金属散热板13具有第1面13a和第2面13b。第1面13a与陶瓷基板11接合。第2面13b与第1面13a相对。金属散热板13具有形成于第2面13b的凹部HP。
在本实施方式中,凹部HP是槽。另外,凹部HP贯穿金属散热板13的第1面13a和第2面13b。此外,凹部HP也可以不贯穿金属散热板13的第1面13a和第2面13b,只要通过凹部HP而使金属散热板13的体积减小即可。由此,能够抑制金属散热板13的热膨胀。
另外,在本实施方式中,凹部HP沿金属散热板13的外缘而形成。此外,凹部HP也可以不沿金属散热板13的外缘而形成,只要在金属散热板13的第2面13b的某部分处形成即可。
另外,在本实施方式中,凹部HP在金属散热板13的外缘的整周形成。此外,凹部HP也可以不在金属散热板13的外缘的整周形成,只要沿金属散热板13的外缘的一部分而形成即可。
另外,在本实施方式中,凹部HP在俯视观察时形成为直线状。此外,凹部HP也可以在俯视观察时不形成为直线状,可以在俯视观察时形成为曲线状。另外,凹部HP也可以是孔。
根据本实施方式的半导体装置,金属散热板13具有形成于第2面13b的凹部HP。因此,能够通过凹部HP而抑制金属散热板13的热膨胀。由此,能够抑制陶瓷基板11的翘曲。
(实施方式3)
对本发明的实施方式3的半导体装置进行说明。
参照图7,实施方式3的半导体装置的金属电路板及金属散热板各自主要在含有铜材料和铝材料这一点上与实施方式1的半导体装置不同。本实施方式的半导体装置的金属电路板及金属散热板各自是所谓的包层材料。
金属电路板12及金属散热板13各自含有铜材料CP和铝材料AP。铝材料AP将铜材料CP覆盖。即,铜材料CP和铝材料AP层叠。铝材料AP的厚度例如是大于或等于0.1mm而小于或等于0.5mm。陶瓷基板11与金属电路板12的铝材料AP及金属散热板13的铝材料AP两者接合。
根据本实施方式的半导体装置,陶瓷基板11与铝材料AP接合。由于铝较柔软,因此相比于与铜接合的情况,能够使接合部分的应力得到缓和。
(实施方式4)
对本发明的实施方式4的半导体装置进行说明。
参照图8,实施方式4的半导体装置主要在还具有散热器20这一点上与实施方式1的半导体装置不同。散热器20具有散热片。散热器的材料例如是铝。散热器20覆盖金属散热板13的整个面。散热器20隔着脂状物21安装于金属散热板13。在金属散热板13和散热器20之间涂敷有脂状物21。脂状物21的热传导率大于或等于2W/mK。
下面,对本实施方式的半导体装置的作用效果,与对比例的半导体装置进行对比并说明。参照图9,对比例的半导体装置主要在具有基底板30这一点上与本实施方式的半导体装置不同。此外,在图9中,为了容易观察,散热器未图示。
在对比例的半导体装置中,如图9中虚线所示,半导体元件4的使用时的热量向陶瓷电路基板10及基底板30扩散。由于对比例的半导体装置具有基底板30,因此在半导体元件4处产生的热量从半导体元件4朝向散热器扩散至基底板30。因此,由于半导体元件4和散热器之间的距离变大,所以在半导体元件4处产生的热量在较大的范围内扩散,直至到达散热器为止。
与此相对,在本实施方式的半导体装置中,由于不具有基底板30,因此如图8中虚线所示,与对比例相比,在半导体元件4处产生的热量从半导体元件4朝向散热器20扩散的范围小。因此,脂状物21对在半导体元件4处产生的热量的散热施加的影响变大。在本实施方式的半导体装置中,由于脂状物21的热传导率大于或等于2W/mK,因此脂状物21的散热性较高。因此,能够提高在半导体元件4处产生的热量的散热性。
【实施例】
下面,对本发明的实施例进行说明。
首先,通过模拟,对本发明的实施例以及现有的半导体装置的热阻进行了测定。参照图10,以现有的半导体装置为例,对半导体装置的热阻进行说明。现有的半导体装置具有基底板30。对图10所示的点Tj、Tc、Tf、Ta各点之间的热阻、以及点Tj和点Ta之间的热阻进行了测定。点Tj位于半导体芯片的上表面。点Tc位于基底板30和脂状物21之间的接点处。点Tf位于脂状物21和散热器20之间的接点处。点Ta位于散热器的下表面。另外,本发明的实施例不具有基底板。在本发明的实施例中,点Tf位于金属散热板13和脂状物21之间的接点处。
参照图11及图12,Rth(j-a)是点Tj和点Ta之间的热阻。Rth(j-c)是点Tj和点Tc之间的热阻。Rth(c-f)是点Tc和点Tf之间的热阻。Rth(f-a)是点Tf和点Ta之间的热阻。另外,图11中的符号t是金属电路板及金属散热板的厚度。可知,金属电路板及金属散热板的厚度大于或等于0.6mm的情况下的热阻是比现有的半导体装置的热阻低的值。由此可知,通过将金属电路板及金属散热板的厚度设为大于或等于0.6mm,即使没有如现有技术那样具有基底板,也能够实现和现有技术相同的热阻。
然后,通过模拟,对本发明的实施例及现有的半导体装置的翘曲进行了测定。参照图13,对本发明的实施例的陶瓷电路基板10的翘曲量进行了测定。此外,在图13中,为了易于观察,电路图案未图示。将向金属电路板12侧凸出的翘曲定义为负翘曲,将向金属散热板13侧凸出的翘曲定义为正翘曲。另外,对在图13中示出的xyz轴进行定义,陶瓷电路基板10的四角中的1个固定z,另1个固定y、z,还有1个固定x、y、z。在该条件下,对于TypeA及TypeB这2种类型的陶瓷电路基板10,对翘曲量进行了测定。
TypeA是金属电路板12的电路图案的面积较小的形状。TypeA的陶瓷基板11的外形尺寸是长度为79mm、宽度为58.1mm。金属电路板12的外形尺寸是长度为70mm、宽度为49.1mm。金属散热板13的外形尺寸是长度为77.4mm、宽度为56.5mm。TypeB是与TypeA相比金属电路板12的电路图案的面积较大的形状。TypeB的陶瓷基板11的外形尺寸是长度为79mm、宽度为58.1mm。金属电路板12的外形尺寸是长度为73mm、宽度为52.1mm。金属散热板13的外形尺寸是长度为77mm、宽度为56.1mm。另外,对于TypeA及TypeB,金属散热板13均为实心金属板。
参照图14、表1及表2,研究了金属电路板12的体积Vm1和金属散热板13的体积Vm2的比率、与陶瓷电路基板10的翘曲量之间的关系。
表1中示出TypeA的翘曲量等,表2中示出TypeB的翘曲量等。表1及表2的表面图案表示金属电路板12,背面图案表示金属散热板13。体积比表示金属电路板12的体积Vm1相对于金属散热板13的体积Vm2的比。
[表1]
[表2]
通常存在下述问题,即,由于脂状物的厚度为0.1mm,因此如果陶瓷电路基板的翘曲量超过0.1mm,则不能确保脂状物的散热性。即,由于在负翘曲的情况下,金属散热板从散热器远离,因此在脂状物中产生空隙。另外,在正翘曲的情况下,由于金属散热板接近散热器,因此将脂状物推开,在翘曲恢复时,有时在脂状物中产生空隙。如上所述,由于如果陶瓷电路基板的翘曲量超过0.1mm,则在脂状物中产生空隙,因此难以确保散热性。因此,优选使陶瓷电路基板的翘曲量小于或等于0.1mm。此外,关于正翘曲,由于金属散热板接近散热器,因此有时在脂状物中不产生空隙。如上所述可知,优选金属电路板12的体积Vm1相对于金属散热板13的体积Vm2的比率大于或等于70%而小于或等于130%。
另外可知,在金属电路板的体积大于金属散热板的体积的情况下,翘曲量变为零。具体地说,可知,在金属电路板的体积Vm1相对于金属散热板的体积Vm2的比率约为110%时,翘曲量变为零。如上所述可知,优选金属电路板的体积大于金属散热板的体积。
另外可知,优选金属电路板的厚度相对于金属散热板的厚度的比率大于或等于6/5而小于或等于4/3。
下面,通过模拟,对变更了脂状物的情况下的本发明的实施例以及现有的半导体装置的热阻进行了测定。
参照图15可知,与现有的陶瓷基板是氧化铝、脂状物的热传导率为0.9W/mK的半导体装置相比,使用了热传导率为0.9W/mK的脂状物的、本发明的实施例的半导体装置的热阻变小。另外可知,与现有的陶瓷基板是氮化铝、脂状物的热传导率为0.9W/mK的半导体装置相比,使用了热传导率为2.0W/mK的脂状物的、本发明的实施例的半导体装置的热阻变小。并且可知,在本发明的实施例中,由于脂状物的热传导率为2.0W/mK,因此热阻大幅度地变小。
对本发明进行了详细说明,但这只是例示,而非限定,明显应当理解为发明的范围是由随附的权利要求书进行解释的。
Claims (10)
1.一种半导体装置,其具有:
半导体元件;以及
陶瓷电路基板,其安装有所述半导体元件,
所述陶瓷电路基板包含:
陶瓷基板,其具有彼此相对的一个面和另一个面;
金属电路板,其与所述陶瓷基板的所述一个面接合,且与所述半导体元件电连接;以及
金属散热板,其与所述陶瓷基板的所述另一个面接合,
所述金属电路板的厚度大于所述金属散热板的厚度,
所述金属散热板的与所述陶瓷基板相反侧的面的表面积大于所述金属电路板的与所述陶瓷基板相反侧的面的表面积,
所述金属电路板的体积大于所述金属散热板的体积,
所述半导体装置具有覆盖所述金属散热板而设置的散热器。
2.根据权利要求1所述的半导体装置,其中,
所述散热器隔着脂状物安装于所述金属散热板,
所述脂状物的热传导率大于或等于2W/mK。
3.一种半导体装置,其具有:
半导体元件;以及
陶瓷电路基板,其安装有所述半导体元件,
所述陶瓷电路基板包含:
陶瓷基板,其具有彼此相对的一个面和另一个面;
金属电路板,其与所述陶瓷基板的所述一个面接合,且与所述半导体元件电连接;以及
金属散热板,其与所述陶瓷基板的所述另一个面接合,
所述金属散热板的厚度相对于所述金属电路板的厚度的比率大于或等于6/5而小于或等于4/3,
所述金属散热板的与所述陶瓷基板相反侧的面的表面积大于所述金属电路板的与所述陶瓷基板相反侧的面的表面积,
所述金属电路板的体积大于所述金属散热板的体积。
4.根据权利要求1或2所述的半导体装置,其中,
所述金属电路板的体积相对于所述金属散热板的体积的比率小于或等于130%。
5.根据权利要求1或2所述的半导体装置,其中,
所述陶瓷基板含有氮化硅。
6.根据权利要求1或2所述的半导体装置,其中,
所述金属电路板及所述金属散热板各自含有铜。
7.根据权利要求1或2所述的半导体装置,其中,
所述金属电路板及所述金属散热板各自含有:铜材料;以及铝材料,其将所述铜材料覆盖,
所述陶瓷基板与所述金属电路板的所述铝材料接合,并且所述陶瓷基板与所述金属散热板的所述铝材料接合。
8.根据权利要求1或2所述的半导体装置,其中,
所述半导体元件含有能带隙大于或等于2eV的材料。
9.根据权利要求1或2所述的半导体装置,其中,
还具有壳体,该壳体支撑所述陶瓷基板,
所述壳体包含伸出部,该伸出部伸出至所述陶瓷基板的所述一个面的正上方,且搭载于所述一个面,
所述金属散热板的至少一部分配置为,在从所述一个面和所述另一个面相对的方向观察时,与所述伸出部重叠。
10.根据权利要求1或2所述的半导体装置,其中,
所述金属散热板包含:
第1面,其与所述陶瓷基板接合;以及
第2面,其与所述第1面相对,
所述金属散热板具有形成于所述第2面的凹部。
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