CN109346449A - 一种大功率高电压ltcc模块散热封装 - Google Patents
一种大功率高电压ltcc模块散热封装 Download PDFInfo
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 25
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- 230000005611 electricity Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 208000021760 high fever Diseases 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Abstract
本发明公开了一种大功率高电压LTCC模块散热封装,基板由散热座和壳盖夹持封装在其中,基板朝向壳盖的一面上设置小功率器件和小电流引线,小电流引线从壳盖表面设置的通槽孔穿出;基板朝向散热座的一面上设置大功率器件及大电流引线,大电流引线从散热座和壳盖相对合的对合面处延伸引出;与大功率器件表面相接触的散热座表面位置贴有导热石墨膜,大功率器件表面涂有导热硅脂或导热硅胶,大功率器件散发的热量通过导热硅脂或导热硅胶和导热石墨膜传向散热座。
Description
技术领域
本发明涉及一种大功率高电压LTCC模块散热封装。
背景技术
混合集成功率模块的散热通常采用的设计是:1)将功率器件组装到氮化铝或氧化铍基板上;2)采用焊接方式将功率基板固定到散热外壳上。
这种设计局限性在于:只能采用单面组装,集成效率不高;2)氮化铝或氧化铍基板工艺复杂,成本昂贵。
发明内容
本发明所要解决的技术问题是提供一种大功率高电压LTCC模块散热封装,一方面集成效率高,另一方面散热效果更好。
为解决上述技术问题,本发明采用以下技术方案:
一种大功率高电压LTCC模块散热封装,其特征是,基板由散热座和壳盖夹持封装在其中,基板朝向壳盖的一面上设置小功率器件和小电流引线,小电流引线从壳盖表面设置的通槽孔穿出;基板朝向散热座的一面上设置大功率器件及大电流引线,大电流引线从散热座和壳盖相对合的对合面处延伸引出;与大功率器件表面相接触的散热座表面位置贴有导热石墨膜,大功率器件表面涂有导热硅脂或导热硅胶,大功率器件散发的热量通过导热硅脂或导热硅胶和导热石墨膜传向散热座。
小信号引线采用贴片式排针引线,从基板朝向壳盖的一面上引出,壳盖上开设通槽孔,用于容纳小信号引线穿出。
大电流引线采用紫铜片制成。
散热座或/和壳盖上开有可容纳大电流引线向外延伸穿出的沟槽通道。
散热座的沟槽通道与大电流引线通过导热硅脂相接触。
壳盖与散热座对合的接触面上涂有绝缘导热硅胶或绝缘导热硅脂。
大电流引线与基板上的大电流导电带相交叉的位置,在大电流导电带表面印刷烧结厚度40μm以上的绝缘介质,与大电流引线进行电绝缘隔离。
所述基板为LTCC基板。
所述散热座、壳盖采用铝质材料。
本发明所达到的有益效果:
本发明的LTCC模块散热封装,组装工艺简单、成本低廉、集成密度高、可双面组装,散热效率高、效果好(60W功率,外壳温升≤50℃);耐压≥1000V,最大输出电流≥30A;结构牢固、强度高、抗机械冲击能力强。
附图说明
图1结构爆炸图;
图2a图1的俯视图;
图2b图1的主视图;
图2c图1的右视图;
图2d图1的仰视图;
图3a 散热座仰视图;
图3b 散热座主视图;
图3c 散热座左视图;
图4a 壳盖俯视图;
图4b 壳盖主视图;
图4c 壳盖左视图
图5 基板高热元器件布局示意图。
具体实施方式
下面结合附图对本发明作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
1、“一种大功率高电压LTCC模块散热封装”技术特点
1.1 技术方案
1.1.1封装结构
结合图1、图2 a、图2b、图2c、图3a、图4a和图5所示,基板1由散热座2和壳盖3夹持封装在其中,基板1朝向壳盖3的一面上设置小功率器件和小电流引线11,小电流引线从壳盖3表面设置的通槽孔31穿出,用于外部电连接;基板1朝向散热座的一面上设置大功率器件12及大电流引线13,大电流引线13从基板1的大电流引线焊区131向外引出,并从散热座和壳盖相对合的对合面处延伸引出。
1)基板:采用dupont-951生瓷或相当材料LTCC基板;
2)散热外壳(散热座+壳盖):采用铝质材料,表面硬质阳极氧化,氧化铝膜层耐压≥1000V;散热座2和壳盖3上分别开有可容纳大电流引线向外延伸穿出的沟槽通道21、32。
3)小信号引线11:从基板朝向壳盖的一面上引出,采用定制贴片式排针引线,铝质壳盖上开设通孔槽,用于容纳小信号引线穿出;
4)大电流引线13:从散热座和壳盖相对合的对合面处引出,采用0.5mm±0.1mm厚度紫铜片制成。
1.1.2 散热设计:
1)散热材料:采用铝质材料的散热座和壳盖,表面硬质阳极氧化,氧化铝膜层耐压≥1000V;
2)散热布局:小功率器件及小电流引线11分布在LTCC基板一侧,大功率器件12及大电流引线13均匀分布在基板另一侧,大电流引线从功率器件中间引出,以便进封装散热处理;
3)传热设计:与大功率器件表面相接触的散热座表面位置贴有高导热石墨膜4,大功率器件12表面涂有导热硅脂,大功率器件12散发的热量通过导热硅脂和导热石墨膜4快速传向散热座。
4)大电流导电带设计:基板上的30A大电流导电带设计成宽度8mm以上,烧结厚度30μm以上的PgAg导电带。
5)耐高压设计:大电流导电带与大电流引线压差超过500V,二者在基板上设计组装时有交叉,在大电流导电带表面印刷烧结厚度40μm以上的绝缘介质(Dupont-5704)与大电流引线进行电绝缘隔离。
1.1.3 装配工艺
1)组装:采用SMT焊接工艺将电路元器件、大功率器件和“贴片式排针”与基板装连;采用手工烙铁焊将大电流引线与基板焊接形成“LTCC电路芯片”;
2)装配:将“LTCC电路芯片”背面四周基板上涂上绝缘硅胶与散热座装连,形成“功率电路芯组”。其中,导热石墨膜与大功率器件表面通过导热硅脂接触;散热座沟槽底部与大电流引线上的导热硅脂相接触。
3)封盖:壳盖与散热座之间用螺钉固定,二者接触(除螺钉安装孔之外)部分,也涂薄层绝缘导热硅胶或硅脂。
1.2 方案特点
本散热封装结构有以下特点:
散热结构组装工艺简单、成本低廉、集成密度高、散热效率高(60W功率,外壳温升≤50℃);耐压≥1000V,最大输出电流≥30A;结构牢固、强度高、抗机械冲击能力强。
2 关键材料及尺寸要求
2.1 基板
2.1.1基板材料:
1)LTCC基板:Dupont-951或相当性能生瓷材料;
2.1.2 基板尺寸
1)长、宽:根据使用要求和集成元器件尺寸确定基板长、宽尺寸,根据布线层数和抗机械强度确定基板高度尺寸。
2)基板厚度:厚度≥1.2mm (LTCC基板)
2.2 散热座与壳盖(见图3a、图3b、图3c、图4a、图4b和图4c)
2.2.1 材料: 牌号6061(H30或HE30)铝(Al);
2.2.2 绝缘处理:散热座与壳盖表面进行硬质阳极氧化绝缘处理,氧化铝层耐压≥1000V。
2.2.3 关键尺寸:
1)散热座:最薄处尺寸(沟槽底部厚度)H≥0.8mm;
2)壳盖螺孔钻孔面最小宽度W≥2.0mm;
3)最小螺孔直径M≥1.2mm;
2.3 贴片式排针
2.3.1 材料:
1)引线针:牌号C19400铜(Cu),表面镀金(Au);
2)塑料卡:聚苯硫醚(PPS)或相当性能塑料。
2.3.2 尺寸:
引线插针间距(pitch)为1.27mm或2.54mm,引线插针横截面尺寸按所承受电流设计;塑料卡高度按基板其它元器件高度来确定;贴片引脚尺寸按安装牢固性来设计。
2.4 大电流引线
2.4.1 材料:紫铜又称红铜,为单抟铜;
2.4.2 尺寸:厚度:0.5mm±0.1mm,宽度根据电流大小计算所得。
2.5 导热膜片
2.5.1 材料:高导热人工石墨(碳素)膜片;
2.5.2 尺寸:厚度:0.1mm~0.5mm;
2.6 大电流导电带(见图4)
2.6.1 材料:Dupont-6177或相当性能其它牌号导体
2.6.2 尺寸:膜层厚度(烧结)≥30μm,导电带宽度;根据承受电流计算所得。
2.7 绝缘介质
2.7.1材料:Dupont-5704或相当性能其它牌号介质材料;
2.7.2尺寸:膜层厚度(烧结)≥40μm,介质图形宽度;比紫铜片宽度每边大0.5mm。
2.8 粘接剂
1)粘接硅胶:南大704或相当性能其它牌号硅胶;
2)导热硅脂:道康宁或相当性能其它牌号导热硅脂。
2.9 焊接材料
1)基板:焊接材料成份:62Sn36Pb2Ag。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变形,这些改进和变形也应视为本发明的保护范围。
Claims (9)
1.一种大功率高电压LTCC模块散热封装,其特征是,基板由散热座和壳盖夹持封装在其中,基板朝向壳盖的一面上设置小功率器件和小电流引线,小电流引线从壳盖表面设置的通槽孔穿出;基板朝向散热座的一面上设置大功率器件及大电流引线,大电流引线从散热座和壳盖相对合的对合面处延伸引出;与大功率器件表面相接触的散热座表面位置贴有导热石墨膜,大功率器件表面涂有导热硅脂或导热硅胶,大功率器件散发的热量通过导热硅脂或导热硅胶和导热石墨膜传向散热座。
2.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,小信号引线采用贴片式排针引线,从基板朝向壳盖的一面上引出,壳盖上开设通槽孔,用于容纳小信号引线穿出。
3.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,大电流引线采用紫铜片制成。
4.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,散热座或/和壳盖上开有可容纳大电流引线向外延伸穿出的沟槽通道。
5.根据权利要求4所述的一种大功率高电压LTCC模块散热封装,其特征是,散热座的沟槽通道与大电流引线通过导热硅脂相接触。
6.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,壳盖与散热座对合的接触面上涂有绝缘导热硅胶或绝缘导热硅脂。
7.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,大电流引线与基板上的大电流导电带相交叉的位置,在大电流导电带表面印刷烧结厚度40μm以上的绝缘介质,与大电流引线进行电绝缘隔离。
8.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,所述基板为LTCC基板。
9.根据权利要求1所述的一种大功率高电压LTCC模块散热封装,其特征是,所述散热座、壳盖采用铝质材料。
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