CN105405827A - 一种低成本多层堆叠扇出型封装结构及其制备方法 - Google Patents

一种低成本多层堆叠扇出型封装结构及其制备方法 Download PDF

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CN105405827A
CN105405827A CN201510977049.7A CN201510977049A CN105405827A CN 105405827 A CN105405827 A CN 105405827A CN 201510977049 A CN201510977049 A CN 201510977049A CN 105405827 A CN105405827 A CN 105405827A
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chip
insulating resin
metal ball
resin
package structure
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陈�峰
张文奇
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National Center for Advanced Packaging Co Ltd
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Abstract

本发明涉及一种低成本多层堆叠扇出型封装结构及其制备方法,包括以下步骤:(1)在承载片上制作临时键合薄膜和金属球;(2)将第一芯片贴装在临时键合薄膜上,覆盖第一绝缘树脂并减薄;(3)在第一绝缘树脂上面涂覆第二绝缘树脂,在第二绝缘树脂上制作第一种子层,去除承载片和临时键合薄膜;(4)在第一芯片的正面制作第三绝缘树脂和第二种子层,在第二种子层上制作导电线路,导电线路分别与金属球和第一芯片的焊盘;(5)在导电线路表面制作第四绝缘树脂,在第四绝缘树脂表面形成开口露出导电线路;(6)制作焊球;(7)在第一芯片的背面堆叠第二芯片。本发明降低制作成本,提高芯片的对准精度,降低了封装产品的高度。

Description

一种低成本多层堆叠扇出型封装结构及其制备方法
技术领域
本发明涉及一种低成本多层堆叠扇出型封装结构及其制备方法,属于半导体封装技术领域。
背景技术
随着电子产品多功能化和小型化的潮流,高密度微电子组装技术在新一代电子产品上逐渐成为主流。为了配合新一代电子产品的发展,尤其是智能手机、掌上电脑、超级本等产品的发展,芯片的尺寸向密度更高、速度更快、尺寸更小、成本更低等方向发展。扇出型方片级封装技术(FanoutPanelLevelPackage,FOPLP)的出现,作为扇出型晶圆级封装技术(FanoutWaferLevelPackage,FOWLP)的升级技术,拥有更广阔的发展前景。
智能手机、智能穿戴、物联网、人体芯片等科技的飞速发展,引领芯片封装技术朝小型化、高密度化、三维化等趋势发展。高度度三维封装芯片技术成为芯片封装的热门技术。
现有技术中,星科金朋的专利申请US2014048906A1公开的工艺中需要预先制作带有导电球或柱子的转接板。转接板需要使用特殊的工艺制作,如打孔,电镀等,然后切割成小尺寸的转接板。芯片和带有导电球或柱子的转接板同时贴在承载板上,然后进行塑封。塑封完成后制作芯片正面的导电线路、保护层等结构。导电球或柱子使用激光等方式制作。在导电球或柱子上方贴芯片形成芯片三维堆叠的结构。
星科金朋的专利申请US2013249106A1公开的工艺中需要预先将芯片完成封装,制作成单程封装芯片。然后在芯片外围的介质层形成开口,开口中填充导电材料。在单层封装结构顶部堆叠芯片形成三维堆叠的结构。
发明内容
本部分的目的在于概述本发明的实施例的一些方面以及简要介绍一些较佳实施例。在本部分以及本申请的说明书摘要和发明名称中可能会做些简化或省略以避免使本部分、说明书摘要和发明名称的目的模糊,而这种简化或省略不能用于限制本发明的范围。
鉴于上述和/或现有半导体封装中存在的结构和制作工艺较为复杂,以及制作成本高问题,提出了本发明。
本发明的目的是克服现有技术中存在的不足,提供一种低成本多层堆叠扇出型封装结构及其制备方法,降低制作成本,提高芯片的对准精度,降低了封装产品的高度。
按照本发明提供的技术方案,所述低成本多层堆叠扇出型封装结构的制备方法,包括以下步骤:
(1)承载片作为基底材料,在承载片上覆盖临时键合薄膜;
(2)在临时键合薄膜上形成金属球;
(3)将第一芯片的正面贴装在临时键合薄膜上,在第一芯片和临时键合薄膜上覆盖第一绝缘树脂;
(4)将第一绝缘树脂减薄,露出金属球和第一芯片的背面;在第一绝缘树脂上面涂覆第二绝缘树脂;
(5)在第二绝缘树脂上开窗露出金属球,在开窗处沉积第一种子层;再去除承载片和临时键合薄膜,露出金属球和第一芯片的正面;
(6)在第一芯片的正面形成第三绝缘树脂,第三绝缘树脂上开窗露出金属球和第一芯片的焊盘;在露出的金属球和焊盘表面沉积第二种子层;
(7)在第二种子层上形成导电线路,导电线路分别与金属球和第一芯片的焊盘连接;
(8)在导电线路表面形成第四绝缘树脂,第四绝缘树脂将导电线路和第三绝缘树脂覆盖,在第四绝缘树脂表面形成开口露出导电线路;
(9)在第四绝缘树脂的开口处形成焊球,焊球与导电线路相连,并通过导电线路分别与金属球和第一芯片的焊盘导通;
(10)在第一芯片的背面堆叠第二芯片,第二芯片通过第二绝缘树脂上的第一开口与金属球电连接。
进一步的,所述承载片是硅、二氧化硅、陶瓷、玻璃、金属、合金或有机材料的片体,或者是能够加热和控温的平板装置。
进一步的,所述临时键合薄膜为热塑或热固型有机材料,或者是含有Cu、Ni、Cr或Co的无机材料。
进一步的,所述金属球为金、银、铜、锡、钛、镍、镁、铋、钯、镍、铬、铁、铟中的一种或多种金属。
进一步的,所述金属球是球形、圆柱形或圆锥形。
进一步的,所述第一绝缘树脂为环氧树脂、聚酰亚胺、BCB、PBO、硅胶、酚醛树脂、亚克力树脂、三嗪树脂、PVDF、底填胶(UnderFill或MUF等)、塑封底填胶或者添加填料的树脂;所述第二绝缘树脂、第三绝缘树脂和第四绝缘树脂为聚酰亚胺、感光型环氧树脂、阻焊油墨、绿漆、干膜、感光型增层材料、BCB(双苯环丁烯树脂)或PBO(苯基苯并二恶唑树脂)。
进一步的,所述第一芯片通过焊接的方式连接第二芯片,或者在第一芯片通过打线的方式连接第二芯片。
所述低成本多层堆叠扇出型封装结构,其特征是:包括第一芯片和第二芯片;所述第一芯片包裹于第一绝缘树脂中,第一绝缘树脂的一面覆盖第二绝缘树脂,第一绝缘树的另一面覆盖第三绝缘树脂,第三绝缘树脂的表面覆盖第四绝缘树脂;在所述第一绝缘树脂中设有金属球,第二绝缘树脂上设有金属球的第一开口,在第一开口处设有第一种子层,在第三绝缘树脂上设有露出金属球和第一芯片的焊盘的第二开口,在第二开口处设有第二种子层,第二种子层上设有导电线路;在所述第四绝缘树脂上设有露出导电线路的第三开口,在第三开口处设有焊球,焊球通过导电线路分别与金属球和第一芯片的焊盘电连接;所述第二芯片通过第二绝缘树脂上的第一开口与金属球电连接。
进一步的,所述第二芯片为倒装芯片或引线键合芯片。
进一步的,所述第一芯片的正面和背面分别与第一绝缘树脂的两表面平齐。
本发明具有以下优点:
(1)本发明的金属球制作方式和露出方式简单,金属球可以使用植球、印刷等工艺制作,可以一次形成几万到几百万颗金属球,制作工艺和制作成本均可以大幅度降低。
(2)本发明的金属球的露出方式使用抛光减薄等方式露出,一次露出全部金属球,制作工艺和制作成本均可以大幅度降低。
(3)本发明使用先做球后贴片的方法,可以简化工艺流程。传统工艺使用激光钻孔再放球等方式,钻孔效率低,对球的大小有限制,工艺复杂。
(4)本发明所述工艺中省略了封装基板,有利于工艺步骤的减少和成本的降低。
(5)本发明所述封装结构简单,由于省略了封装基板产品结构复杂程度降低。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例描述中所需要使用的附图作简单的介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。图1~图10-2为本发明所述封装结构制备过程的示意图。其中:
图1为在承载片上覆盖临时键合薄膜的示意图。
图2为在临时键合薄膜上制作金属球的示意图。
图3为贴装第一芯片的示意图。
图4为减薄第一绝缘树脂以及制作第二绝缘树脂的示意图。
图5为制作第一种子层以及去除承载片和临时键合薄膜的示意图。
图6为制作第三绝缘树脂和第二种子层的示意图。
图7为制作导电线路的示意图。
图8为制作第四绝缘树脂的示意图。
图9为制作焊球的示意图。
图10-1为第一芯片通过焊接方式形成的封装结构。
图10-2为第一芯片通过打线的方式形成的封装结构。
具体实施方式
为了使本发明的上述目的、特征和优点能够更加明显易懂,下面结合具体附图对本发明的具体实施方式作进一步的说明。
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其他不同于在此描述的其它方式来实施例,本领域技术人员可以在不违背本发明内涵的情况下做类似推广,因此本发明不受下面公开的具体实施例的限制。
其次,本发明结合示意图进行详细描述,在详述本发明实施例时,为便于说明,表示器件结构的剖面图会不依一般比例作局部放大,而且所述示意图只是示例,其在此不应限制本发明保护的范围。此外,在实施制作中应包含长度、宽度及深度的三维空间尺寸。
实施例一:一种低成本多层堆叠扇出型封装结构的制备方法,包括以下步骤:
(1)承载片101作为基底材料,使用滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式在承载片101上覆盖临时键合薄膜102,如图1所示。
所述承载片101可以是硅、二氧化硅、陶瓷、玻璃、金属、合金、有机材料等成份的方片、圆片或不规则片,也可以是可以进行加热和控温的一种平板装置。
所述临时键合薄膜102为热塑或热固型有机材料,也可以是含有Cu、Ni、Cr、Co等成分的无机材料。
所述临时键合薄膜102可以通过加热、机械、化学、激光、冷冻等方式拆除。
(2)使用植球、印刷、抓球、激光烧球、电镀、化学镀等方式在临时键合薄膜102上形成金属球103,如图2所示。
所述金属球103为金属材质,例如金、银、铜、锡、钛、镍、镁、铋、钯、镍、铬、铁、铟等一种或多种金属。金属球103可以是球形,也可以是圆柱形、圆锥形或其他立体形状。
(3)将第一芯片104的正面贴装在临时键合薄膜102上,在第一芯片104和临时键合薄膜102周围形成第一绝缘树脂105,第一绝缘树脂105将第一芯片104和金属球103覆盖,如图3所示。
所述第一绝缘树脂105可以使用滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式覆盖。
所述第一绝缘树脂105为环氧树脂、聚酰亚胺、BCB、PBO、硅胶、酚醛树脂、亚克力树脂、三嗪树脂、PVDF、底填胶(UnderFill或MUF等)、塑封底填胶或者添加填料的树脂。
(4)使用化学抛光、机械抛光、化学机械抛光等工艺将第一绝缘树脂105减薄,露出金属球103和第一芯片104的背面;在第一绝缘树脂105上面涂覆第二绝缘树脂106,如图4所示。
所述第二绝缘树脂106为感光树脂或者可以通过干法刻蚀等工艺形成图形的树脂,例如聚酰亚胺、感光型环氧树脂、阻焊油墨、绿漆、干膜、感光型增层材料、BCB(双苯环丁烯树脂)、PBO(苯基苯并二恶唑树脂)。
所述第二绝缘树脂106可以通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式制作。
(5)第二绝缘树脂106通过曝光显影等工艺开窗露出金属球103,在第二绝缘树脂106的开窗处表面沉积第一种子层107;再去除承载片101和临时键合薄膜102,露出金属球103和第一芯片104的正面,如图5所示。
所述去除方式包括加热、机械、化学、激光、冷冻等方式。
所述第一种子层107可以是金属或有机保护层。
(6)在第一芯片104的正面形成第三绝缘树脂1061,第三绝缘树脂1061通过曝光显影等工艺开窗露出金属球103和第一芯片104的焊盘108;在露出的金属球103和焊盘108表面沉积第二种子层1071,如图6所示。
(7)通过光刻、电镀或化学镀的方法在第二种子层1071上形成导电线路109,导电线路109分别与金属球103和第一芯片104的焊盘108相连,如图7所示。
(8)在导电线路109表面形成第四绝缘树脂110,第四绝缘树脂110将导电线路109和第一芯片104正面的第三绝缘树脂1061覆盖,通过光刻的方法在第四绝缘树脂110表面形成开口露出导电线路109,如图8所示。
所述第四绝缘树脂110为感光树脂或者可以通过干法刻蚀等工艺形成图形的树脂,例如聚酰亚胺、感光型环氧树脂、阻焊油墨、绿漆、干膜、感光型增层材料、BCB(双苯环丁烯树脂)或者PBO(苯基苯并二恶唑树脂)。
所述第四绝缘树脂110可以通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式制作。
(9)在第四绝缘树脂110的开口处形成焊球111,焊球111与导电线路109相连,并通过导电线路109分别与金属球103和第一芯片104的焊盘108导通,如图9所示。
所述焊球111为金属材质,焊球111的形成方法包括印刷、植球、激光烧结、电镀、化学镀等方式。
(10)在第一芯片104的背面通过焊接的方式连接第二芯片1041,第二芯片1041的导电体通过第二绝缘树脂106上的开口与金属球103连接,如图10-1所示。
或者,在第一芯片104的背面通过打线的方式连接第二芯片1041,第二芯片1041的引线通守第二绝缘树脂106上的开口与金属球103连接,如图10-2所示。
本发明所述多层扇出型封装的结构和制作方法,通过多个芯片的堆叠技术可以获得尺寸更小,功能更强,厚度更薄的半导体封装器件。使用金属柱的工艺,降低了制作成本;使用倒装芯片的方法,提高了芯片的对准精度;使用减薄的工艺,降低了封装产品的高度,提高了芯片的使用场景。
应说明的是,以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。

Claims (10)

1.一种低成本多层堆叠扇出型封装结构的制备方法,其特征是,包括以下步骤:
(1)承载片(101)作为基底材料,在承载片(101)上覆盖临时键合薄膜(102);
(2)在临时键合薄膜(102)上形成金属球(103);
(3)将第一芯片(104)的正面贴装在临时键合薄膜(102)上,在第一芯片(104)和临时键合薄膜(102)上覆盖第一绝缘树脂(105);
(4)将第一绝缘树脂(105)减薄,露出金属球(103)和第一芯片(104)的背面;在第一绝缘树脂(105)上面涂覆第二绝缘树脂(106);
(5)在第二绝缘树脂(106)上开窗露出金属球(103),在开窗处沉积第一种子层(107);再去除承载片(101)和临时键合薄膜(102),露出金属球(103)和第一芯片(104)的正面;
(6)在第一芯片(104)的正面形成第三绝缘树脂(1061),第三绝缘树脂(1061)上开窗露出金属球(103)和第一芯片(104)的焊盘(108);在露出的金属球(103)和焊盘(108)表面沉积第二种子层(1071);
(7)在第二种子层(1071)上形成导电线路(109),导电线路(109)分别与金属球(103)和第一芯片(104)的焊盘(108)连接;
(8)在导电线路(109)表面形成第四绝缘树脂(110),第四绝缘树脂(110)将导电线路(109)和第三绝缘树脂(1061)覆盖,在第四绝缘树脂(110)表面形成开口露出导电线路(109);
(9)在第四绝缘树脂(110)的开口处形成焊球(111),焊球(111)与导电线路(109)相连,并通过导电线路(109)分别与金属球(103)和第一芯片(104)的焊盘(108)导通;
(10)在第一芯片(104)的背面堆叠第二芯片(1041),第二芯片(1041)通过第二绝缘树脂(106)上的第一开口与金属球(103)电连接。
2.如权利要求1所述的低成本多层堆叠扇出型封装结构的制备方法,其特征是:所述承载片(101)是硅、二氧化硅、陶瓷、玻璃、金属、合金或有机材料的片体,或者是能够加热和控温的平板装置。
3.如权利要求1所述的低成本多层堆叠扇出型封装结构的制备方法,其特征是:所述临时键合薄膜(102)为热塑或热固型有机材料,或者是含有Cu、Ni、Cr或Co的无机材料。
4.如权利要求1所述的低成本多层堆叠扇出型封装结构的制备方法,其特征是:所述金属球(103)为金、银、铜、锡、钛、镍、镁、铋、钯、镍、铬、铁、铟中的一种或多种金属。
5.如权利要求1所述的低成本多层堆叠扇出型封装结构的制备方法,其特征是:所述金属球(103)是球形、圆柱形或圆锥形。
6.如权利要求1所述的低成本多层堆叠扇出型封装结构的制备方法,其特征是:所述第一绝缘树脂(105)为环氧树脂、聚酰亚胺、BCB、PBO、硅胶、酚醛树脂、亚克力树脂、三嗪树脂、PVDF、底填胶(UnderFill或MUF等)、塑封底填胶或者添加填料的树脂;所述第二绝缘树脂(106)、第三绝缘树脂(1061)和第四绝缘树脂(110)为聚酰亚胺、感光型环氧树脂、阻焊油墨、绿漆、干膜、感光型增层材料、BCB(双苯环丁烯树脂)或PBO(苯基苯并二恶唑树脂)。
7.如权利要求1所述的低成本多层堆叠扇出型封装结构的制备方法,其特征是:所述第一芯片(104)通过焊接的方式连接第二芯片(1041),或者在第一芯片(104)通过打线的方式连接第二芯片(1041)。
8.一种低成本多层堆叠扇出型封装结构,其特征是:包括第一芯片(104)和第二芯片(1041);其特征:所述第一芯片(104)包裹于第一绝缘树脂(105)中,第一绝缘树脂(105)的一面覆盖第二绝缘树脂(106),第一绝缘树(105)的另一面覆盖第三绝缘树脂(1061),第三绝缘树脂(1061)的表面覆盖第四绝缘树脂(110);在所述第一绝缘树脂(105)中设有金属球(103),第二绝缘树脂(106)上设有金属球(103)的第一开口,在第一开口处设有第一种子层(107),在第三绝缘树脂(1061)上设有露出金属球(103)和第一芯片(104)的焊盘(108)的第二开口,在第二开口处设有第二种子层(1071),第二种子层(1071)上设有导电线路(109);在所述第四绝缘树脂(110)上设有露出导电线路(109)的第三开口,在第三开口处设有焊球(111),焊球(111)通过导电线路(109)分别与金属球(103)和第一芯片(104)的焊盘(108)电连接;所述第二芯片(1041)通过第二绝缘树脂(106)上的第一开口与金属球(103)电连接。
9.如权利要求8所述的低成本多层堆叠扇出型封装结构,其特征是:所述第二芯片(1041)为倒装芯片或引线键合芯片。
10.如权利要求8所述的低成本多层堆叠扇出型封装结构,其特征是:所述第一芯片(104)的正面和背面分别与第一绝缘树脂(105)的两表面平齐。
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