CN105244307B - 扇出型封装结构的制作方法 - Google Patents
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Abstract
本发明提供了一种扇出型封装结构的制作方法,在晶圆正面覆盖防护层后切割成单个芯片,将芯片正贴到涂覆临时键合薄膜的承载片上,然后覆盖第一绝缘树脂层,第一绝缘树脂层高出芯片上防护层。将第一绝缘树脂层减薄,然后去掉防护层露出芯片正面和电极。再涂覆第二绝缘树脂层并形成开口,制作重布线层后涂覆第三绝缘树脂层并形成开口,露出重布线层的焊盘,在焊盘表面形成导电柱后,去除承载片和临时键合薄膜并在第一绝缘树脂层和芯片背面形成保护层。发明的封装结构中不带承载片,有利于降低封装厚度,同时也扩大了技术的应用范围;而且芯片中未制作铜柱,有利于成本的降低。
Description
技术领域
本发明涉及一种扇出型封装(FOWLP)结构的制作方法,属于集成电路芯片封装技术领域。
背景技术
随着电子产品多功能化和小型化的潮流,高密度微电子组装技术在新一代电子产品上逐渐成为主流。为了配合新一代电子产品的发展,尤其是智能手机、掌上电脑、超级本等产品的发展,芯片的尺寸向密度更高、速度更快、尺寸更小、成本更低等方向发展。扇出型晶圆级封装技术(Fanout Wafer Level Package,FOWLP)的出现,满足了芯片产品尺寸更薄、节省材料(封装基板)等特点,但是如何降低扇出型圆片级封装产品的成本成为需要研究的方向。
(1)日本J-Devices公司在美国专利US 20110309503 A1中,给出了一种扇出型晶圆级封装的制作方法,如图1所示。该专利主要是一个半导体装置1000,里面包括半导体芯片1004,半导体芯片1004底部是一个基板1002,芯片1004通过粘结胶1018与基板1002结合在一起,芯片1004被第一绝缘层1012包裹。导线1008通过连接部1008A与芯片1004导通。在导线1008上面形成第二绝缘层1014,焊球或凸点1010通过第二绝缘层的1014开口与导线1008连接。主要工艺如下:
第一步:芯片1004通过粘结胶1018贴在基板1002上;
第三步:涂覆第一绝缘树脂层1012,并在树脂上开出窗口,露出芯片上的焊盘;
第四步:通过图形电镀与光刻的方法,制作重布线层(Redistribution Layer,RDL),将芯片上的焊盘引出;
第五步:制作第二绝缘层1014,并做开口露出重布线层的导线1008;
第六步:在第二绝缘层上面制作焊球或凸点1010。
该技术的不足之处在于,工艺的第三步中涂覆第一绝缘树脂层,由于通常芯片厚度在50微米以上,所以涂覆绝缘树脂的厚度不易控制,不利于精细线路的制作。而且个别树脂(如PBO)价格较高,不利于成本控制。
(2)台湾育霈科技股份有限公司在专利TW200805595A中,给出了一种扇出型晶圆级封装的结构,如图2所示。该封装体结构包括芯片110,芯片110底部有一个基底100,将芯片110贴在基底100上面。芯片周围覆盖第一介电层120,在第一介电层120上面覆盖第二介电层122,第二介电层122表面形成电路130,将芯片导电层126引出。第二介电层122表面形成第三介电层132,第三介电层132表面形成开口露出电路130,焊球136在开口处与电路130相连,也可以在第一介电层120内部埋入器件142,形成互联。
该技术的不足之处是需要一个基底作为载体,增加了工艺的复杂性,同时不利于芯片整体厚度的降低。
(3)中国专利CN103681371A (陈海杰,等)介绍了一种FOWLP技术,其封装结构如图3所示。该技术采用Die First,但芯片200的主动面朝上。为保证芯片间介电质的填充、沉积及后步工艺,在FOWLP封装实施前,须在芯片主动面的焊盘210上制作Cu-Pillar(铜柱)300。并在介电质填充层410塑封完成后,采用Grinding(磨抛)对塑封层进行减薄直至各焊盘上的铜柱300均露出。最后再在介电质层上制作重布线结构520和凸块600。这种技术虽避免了第二片载板的使用,但铜柱的制作和对塑封层的磨抛减薄,铜柱露头的控制,使得该技术非常昂贵。
发明内容
本发明的目的是克服现有技术中存在的不足,提供一种FOWLP封装方法,重点考虑低成本和制作超薄封装。
按照本发明提供的技术方案,所述超薄扇出型封装结构的制作方法包括以下步骤:
1. 晶圆厂生产的晶圆上有阵列排布的芯片,对应芯片有电极的一面为晶圆的正面,将所述晶圆正面覆盖防护层,背面覆盖贴片膜,然后切割成单个芯片;
2. 承载片上涂覆临时键合薄膜;
3. 将切割好的芯片正贴到承载片的临时键合薄膜上(之前可以先在承载片上制作对准标记,也可以寻边对位);
4. 在临时键合薄膜和芯片上覆盖第一绝缘树脂层,第一绝缘树脂层的高度高于芯片正面的防护层;
5. 将第一绝缘树脂层的厚度减薄,减薄到防护层材料,而不破坏芯片和电极;
6. 去掉芯片上的防护层,露出芯片的正面和电极;
7. 在上一步所得结构的正面涂覆第二绝缘树脂层,并在第二绝缘树脂层表面形成开口,露出芯片的电极;
8. 在第二绝缘树脂层和芯片电极表面形成重布线层;
9. 在第二绝缘树脂层和重布线层表面涂覆第三绝缘树脂层,并在第三绝缘树脂层表面开口,露出重布线层的焊盘;
10. 在重布线层的焊盘表面形成导电柱;
11. 去除承载片和临时键合薄膜,然后在第一绝缘树脂层和芯片背面形成保护层。
所述防护层可通过喷涂、印刷、旋涂、层压、热压、浸泡、溅射、沉积、电镀、化学镀、蒸镀、键合或焊接方式制作。
所述第一绝缘树脂层、第二绝缘树脂层和第三绝缘树脂层可通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡或压力贴合方式制作。
所述临时键合薄膜可使用滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡或压力贴合方式涂覆在承载片上。
所述将第一绝缘树脂层的厚度减薄采用机械减薄、化学减薄或两者相结合的减薄方法,减薄后芯片表面防护层的厚度≥0.5微米。
具体的,所述在第二绝缘树脂层和芯片电极表面形成重布线层的方法为:在第二绝缘树脂层和芯片电极表面形成一层导电的种子层,在种子层表面涂覆光刻胶,通过曝光、显影工艺在光刻胶表面形成图形开口;使用电镀方法,在光刻胶的开口处形成重布线层112;再去除光刻胶和光刻胶底部的种子层,保留重布线层和重布线层底部的种子层。
所述在重布线层的焊盘表面形成导电柱的方法为:在重布线层的焊盘表面形成凸点下金属化层,在凸点下金属化层上面形成导电柱。
所述导电柱可通过印刷、植球、刷球、放球、电镀、化学镀、溅射或蒸镀工艺制作。
所述去除承载片和临时键合薄膜,可通过加热、机械、化学、激光或冷冻方式拆除。
本发明的优点是:本发明的封装结构中不带承载片,有利于降低封装厚度,可以使用超薄芯片,适于制作超薄封装,同时也扩大了技术的应用范围;而且,与现有技术(3)相比,本发明芯片中未制作铜柱,有利于成本的降低。本发明可以使用低成本绝缘树脂作为芯片间填充材料,也有利于降低产品成本。
附图说明
图1是现有技术1封装结构示意图。
图2是现有技术2封装结构示意图。
图3是现有技术3封装结构示意图。
图4是本发明的封装结构示意图。
图5A是晶圆平面图。
图5B是晶圆正面覆盖防护层的剖面图。
图5C是晶圆分割成单个独立芯片。
图6是承载片平面图。
图7是在承载片上涂覆临时键合薄膜。
图8是芯片正贴到承载片上。
图9是在承载片上涂覆第一绝缘树脂层。
图10是将第一绝缘树脂层减薄到防护层材料。
图11是去除防护层露出芯片正面和电极。
图12是在承载片正面涂覆第二绝缘树脂层并形成开口。
图13是在第二绝缘树脂层和电极表面形成种子层再涂覆光刻胶,在光刻胶开口处形成重布线层。
图14是去除光刻胶及光刻胶底部的种子层,再涂覆第三绝缘树脂层并形成开口,在重布线层的焊盘表面形成凸点下金属化层。
图15是在凸点下金属化层上面形成导电柱。
图16是去除承载片和临时键合薄膜,在第一绝缘树脂层和芯片背面涂覆保护层。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
如图4所示,本发明的封装产品的结构包括芯片102,芯片102正面有电极104。芯片102可以为单个芯片,也可以是多个芯片,可以是有源芯片,也可以是无源芯片。
芯片102主动面朝上,芯片102周边填充第一绝缘树脂层108,第一绝缘树脂层108顶部比芯片102上表面高;所述芯片102和第一绝缘树脂层108顶部覆盖有第二绝缘树脂层109,第二绝缘树脂层109表面有重布线层112通过第二绝缘树脂层109的开口与芯片的电极104相连,电极104通过重布线层112引出。重布线层112可以为一层,也可以是多层,重布线层112在第二绝缘树脂层109表面。所述第二绝缘树脂层109和重布线层112上覆盖有第三绝缘树脂层113,第三绝缘树脂层113有开口,露出重布线层112的焊盘114,导电柱116通过焊盘114与重布线层112相连。导电柱116通过重布线层112与芯片102主动面的电极104形成电连接。所述芯片102和第一绝缘树脂层108的底部有保护层117。
本发明的扇出型封装结构的制作方法的基本工艺流程如下:
1、图5A为从晶圆厂生产出来的晶圆101,晶圆101上有阵列排布的芯片102。
图5B为晶圆101的剖面图,在晶圆101正面覆盖防护层103。
防护层103可以通过喷涂、印刷、旋涂、层压、热压、浸泡、溅射、沉积、电镀、化学镀、蒸镀、键合、焊接等方式制作。防护层103可以是金属、有机化合物,如铜、含铬合金、丙烯酸树脂、聚酰亚胺、含氟化合物、含氮化合物、含硫化合物、三唑化合物等。
如图5C,将晶圆101分割成单个独立的芯片102,可以通过机械、激光、化学等方式。芯片102正面(主动面)有电极104。
2、图6为承载片105的俯视图。在承载片105制作对准标记106,也可以寻边对位。
承载片105的材料可以是无机材料、有机材料或混合材料。例如硅、二氧化硅、玻璃、金属、覆铜板、Fr4等材料的方片、圆片或不规则片。
对准标记106为定位或对位用的标记,制作方法包括机械加工、化学腐蚀、电镀等工艺,如激光打标、喷砂,曝光刻蚀,丝网印刷,点胶、钻孔、图形电镀等。
3、如图7,在承载片105上涂覆临时键合薄膜107。临时键合薄膜107可以使用滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式涂覆在承载片105上。临时键合薄膜107可以通过加热、机械、化学、激光、冷冻等方式拆除。
4、如图8,将芯片102正贴(主动面朝上)到承载片105的临时键合薄膜107上。芯片102可以是有源芯片也可以是无源芯片。可以是相同的芯片,也可以是多个不同的芯片。
5、如图9,在临时键合薄膜107和芯片102上涂覆第一绝缘树脂层108,第一绝缘树脂层108的高度高于芯片102上的防护层103。
第一绝缘树脂层108为有机材料或含有有机材料的混合材料,如环氧树脂、聚酰亚胺、BCB(双苯环丁烯树脂)、PBO(苯基苯并二恶唑树脂)、硅胶、酚醛树脂、亚克力树脂、 三嗪树脂、PVDF、底填胶(Under Fill或MUF等)、塑封材料以及添加填料的树脂中的一种或者多种。
第一绝缘树脂层108可以通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式制作。
6、如图10,将第一绝缘树脂层108的厚度减薄,减薄到防护层103材料,但不破坏芯片102和电极104。
减薄的方法可以包括机械减薄、化学减薄和两者相结合的减薄。
减薄后保留防护层103的厚度≥0.5微米。
7、如图11,通过化学、机械或两者相结合的方法去掉防护层103,露出芯片102的正面和电极104。
8、如图12,在承载片105正面涂覆第二绝缘树脂层109,第二绝缘树脂层109将芯片102和第一绝缘树脂层108覆盖。通过曝光、显影或刻蚀等工艺,在芯片102的电极104上形成开口,将芯片电极104露出。
第二绝缘树脂层109包括感光树脂和可以通过干法刻蚀等工艺形成图形的树脂,例如聚酰亚胺、感光型环氧树脂、阻焊油墨、绿漆、干膜、感光型增层材料、BCB(双苯环丁烯树脂)、PBO(苯基苯并二恶唑树脂)中的一种或者多种。
第二绝缘树脂层109可以通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式制作。
9、如图13,在第二绝缘树脂层109和电极104表面形成一层可以导电的种子层110。在种子层110表面涂覆光刻胶111,再通过曝光、显影等工艺在光刻胶111表面形成图形开口。使用电镀等方法,在光刻胶111的开口处形成重布线层112。
种子层110为金属成分,包括Al、Au、Cr、Co、Ni、Cu、Mo、Ti、Ta、Ni-Cr、Co—Ni、Co—Cr、W等金属及其合金。
种子层110可以使用物理和化学的方法形成,例如化学镀、溅射等工艺。
重布线层112为导电材料,包括金属、导电胶等材料。其中金属成分可以为Al、Au、Cr、Ni、Cu、Mo、Ti、Ta、W等金属或其合金。
重布线层112可以通过溅射、电化学、化学沉积、印刷、涂覆、纳米压印等工艺制作。
10、如图14,去除光刻胶111和光刻胶111底部的种子层110,保留重布线层112和底部的种子层110。在第二绝缘树脂层108和重布线层112表面涂覆第三绝缘树脂层113,第三绝缘树脂层113将重布线层112和第二绝缘树脂层109覆盖。通过曝光、显影或刻蚀等工艺,在第三绝缘树脂层113上形成开口,露出重布线层112的焊盘114。在焊盘114表面形成凸点下金属化层(UBM)115。
第三绝缘树脂层113包括感光树脂和可以通过干法刻蚀等工艺形成图形的树脂,例如聚酰亚胺、感光型环氧树脂、阻焊油墨、绿漆、干膜、感光型增层材料、BCB(双苯环丁烯树脂)、PBO(苯基苯并二恶唑树脂)中的一种或者多种。
第三绝缘树脂层113可以通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式制作。
凸点下金属化层115为金属或合金成分,包括Al、Sn、Ag、Pb、Au、Cr、Co、Ni、Cu、Mo、Ti、Bi、Ni-Cr、Co—Ni、Co—Cr、W等金属及其合金。
凸点下金属化层115可以通过溅射、电镀、化学沉积、印刷、涂覆、纳米压印等工艺形成。
11、如图15,在凸点下金属化层115上面形成导电柱116。
导电柱可以是金属或具有导电功能的材料。一般导电柱116为金属或合金成分,包括Al、Sn、Ag、Pb、Au、Cr、Co、Ni、Cu、Mo、Ti、Bi、Ni-Cr、Co—Ni、Co—Cr、W等金属或其合金。
导电柱116可以通过印刷、植球、刷球、放球、电镀、化学镀、溅射、蒸镀等工艺制作。
12、如图16,去掉承载片105和临时键合薄膜107,露出第一绝缘树脂层108和芯片102的背面。在第一绝缘树脂层108和芯片102的背面涂覆保护层117,形成最后的封装结构。
承载片105和临时键合薄膜107可以通过加热、机械、化学、激光、冷冻等方式拆除。
保护层117可以是金属、玻璃、硅、有机材料或含有以上物质的混合材料。
保护层117可以通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡、压力贴合等方式制作。
Claims (7)
1.扇出型封装结构的制作方法,其特征是,包括以下步骤:
(1)晶圆厂生产的晶圆上有阵列排布的芯片,对应芯片有电极的一面为晶圆的正面,将所述晶圆正面覆盖防护层,然后切割成单个芯片;
(2)承载片上涂覆临时键合薄膜;
(3)将切割好的芯片正贴到承载片的临时键合薄膜上;
(4)在临时键合薄膜和芯片上覆盖第一绝缘树脂层,第一绝缘树脂层的高度高于芯片正面的防护层;
(5)将第一绝缘树脂层的厚度减薄,减薄到防护层材料,而不破坏芯片和电极;
(6)去掉芯片上的防护层,露出芯片的正面和电极;
(7)在上一步所得结构的正面涂覆第二绝缘树脂层,并在第二绝缘树脂层表面形成开口,露出芯片的电极;
(8)在第二绝缘树脂层和芯片电极表面形成重布线层;
(9)在第二绝缘树脂层和重布线层表面涂覆第三绝缘树脂层,并在第三绝缘树脂层表面开口,露出重布线层的焊盘;
(10)在重布线层的焊盘表面形成导电柱;
(11)去除承载片和临时键合薄膜,然后在第一绝缘树脂层和芯片背面形成保护层;
所述防护层通过喷涂、印刷、旋涂、层压、热压、浸泡、溅射、沉积、电镀、化学镀、蒸镀、键合或焊接方式制作;
所述第一绝缘树脂层、第二绝缘树脂层和第三绝缘树脂层通过滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡或压力贴合方式制作;
所述将第一绝缘树脂层的厚度减薄采用机械减薄、化学减薄或两者相结合的减薄方法,减薄后芯片表面防护层的厚度≥0.5微米。
2.如权利要求1所述的扇出型封装结构的制作方法,其特征是,所述临时键合薄膜使用滚压、旋涂、喷涂、印刷、非旋转涂覆、热压、真空压合、浸泡或压力贴合方式涂覆在承载片上。
3.如权利要求1所述的扇出型封装结构的制作方法,其特征是,所述芯片正贴到承载片之前先在承载片上制作对准标记。
4.如权利要求1所述的扇出型封装结构的制作方法,其特征是,所述在第二绝缘树脂层和芯片电极表面形成重布线层的方法为:在第二绝缘树脂层和芯片电极表面形成一层导电的种子层,在种子层表面涂覆光刻胶,通过曝光、显影工艺在光刻胶表面形成图形开口;使用电镀方法,在光刻胶的开口处形成重布线层;再去除光刻胶和光刻胶底部的种子层,保留重布线层和重布线层底部的种子层。
5.如权利要求1所述的扇出型封装结构的制作方法,其特征是,所述在重布线层的焊盘表面形成导电柱的方法为:在重布线层的焊盘表面形成凸点下金属化层,在凸点下金属化层上面形成导电柱。
6.如权利要求1所述的扇出型封装结构的制作方法,其特征是,所述导电柱通过印刷、植球、刷球、放球、电镀、化学镀、溅射或蒸镀工艺制作。
7.如权利要求1所述的扇出型封装结构的制作方法,其特征是,所述去除承载片和临时键合薄膜,通过加热、机械、化学、激光或冷冻方式拆除。
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