CN105405814B - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN105405814B
CN105405814B CN201510574471.8A CN201510574471A CN105405814B CN 105405814 B CN105405814 B CN 105405814B CN 201510574471 A CN201510574471 A CN 201510574471A CN 105405814 B CN105405814 B CN 105405814B
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metal pattern
installing component
slit
semiconductor device
insulating resin
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CN105405814A (zh
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益本宽之
川田浩司
松本学
大坪义贵
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Mitsubishi Electric Corp
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Abstract

本发明得到一种半导体装置，其能够抑制制造成本的上升并且确保可靠性。基板(1)具有绝缘树脂(2)和设置在绝缘树脂(2)上的金属图案(3)。安装部件(5)安装在金属图案(3)上。环氧树脂(7)对金属图案(3)以及安装部件(5)进行封装。在安装部件(5)的周边，在金属图案(3)中设置有狭缝(8)。在狭缝(8)处从金属图案(3)露出的绝缘树脂(2)与环氧树脂(7)紧密贴合。

Description

半导体装置
技术领域
本发明涉及一种利用环氧树脂对安装在基板的金属图案上的安装部件进行封装的半导体装置。
背景技术
为了提高功率半导体装置的生产效率和可靠性，利用分散有填料的环氧树脂进行封装的技术正在普及。但是，焊料及金属图案与环氧树脂之间的紧贴性较差，产生以它们之间的界面为起点的剥离。因此，在经受热过程时，向导线、电子部件以及半导体芯片施加由环氧树脂的膨胀收缩所产生的应力，产生导线剥离、半导体芯片的特性变动。
对此，提出了如下技术，即，在基板上的金属图案中设置狭缝而产生锚固效应，由此防止导线及半导体芯片周边处的树脂滑动(例如，参照专利文献1)。
专利文献1：日本特开2006－32617号公报
在现有的装置中，作为基板的绝缘层而使用了陶瓷，因此在狭缝处，陶瓷与环氧树脂紧密贴合。但是，环氧树脂与陶瓷的线膨胀系数之差较大，因此应力在它们的界面处集中，装置的可靠性下降。因此，存在必须在二者之间涂布被覆膜，由于工序的追加而使制造成本上升的问题。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于得到一种半导体装置，其能够抑制制造成本的上升并且确保可靠性。
本发明所涉及的半导体装置的特征在于，具备：基板，其具有绝缘树脂和设置在所述绝缘树脂上的金属图案；安装部件，其安装在所述金属图案上；以及环氧树脂，其对所述金属图案以及所述安装部件进行封装，在所述安装部件的周边，在所述金属图案中设置狭缝，在所述狭缝处从所述金属图案露出的所述绝缘树脂与所述环氧树脂紧密贴合。
发明的效果
在本发明中，在安装部件的周边，在金属图案中设置有狭缝。利用该狭缝的锚固效应抑制环氧树脂的移动，由此能够抑制应力。另外，作为基板的绝缘层而使用绝缘树脂，减小与作为封装材料的环氧树脂之间的线膨胀系数之差。由此，能够在不使用被覆膜的状态下，抑制在它们之间的界面处产生的应力。其结果，能够抑制制造成本的上升并且确保可靠性。
附图说明
图1是表示本发明的实施方式1所涉及的半导体装置的俯视图。
图2是沿图1的I－II的剖面图。
图3是将本发明的实施方式2所涉及的半导体装置的主要部分进行放大得到的俯视图。
图4是将本发明的实施方式3所涉及的半导体装置的主要部分进行放大得到的俯视图。
图5是将本发明的实施方式4所涉及的半导体装置的主要部分进行放大得到的俯视图。
图6是将本发明的实施方式5所涉及的半导体装置的主要部分进行放大得到的俯视图。
图7是将本发明的实施方式6所涉及的半导体装置的主要部分进行放大得到的俯视图。
图8是将本发明的实施方式7所涉及的半导体装置的主要部分进行放大得到的俯视图。
图9是将本发明的实施方式8所涉及的半导体装置的主要部分进行放大得到的俯视图。
图10是将本发明的实施方式9所涉及的半导体装置的主要部分进行放大得到的俯视图。
标号的说明
1基板，2绝缘树脂，3金属图案，5安装部件，7环氧树脂，8狭缝，9凹坑(狭缝)
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体装置进行说明。对于相同或相对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是表示本发明的实施方式1所涉及的半导体装置的俯视图。图2是沿图1的I－II的剖面图。
基板1具有：绝缘树脂2、在绝缘树脂2上设置的金属图案3、以及在绝缘树脂2的背面设置的背面图案4。安装部件5利用焊料安装在金属图案3上。安装部件5例如是半导体芯片。导线6与安装部件5进行键合。
分散有填料的环氧树脂7对金属图案3、安装部件5、以及导线6进行封装。在安装部件5的周边，在金属图案3中设置有狭缝8。在狭缝8处从金属图案3露出的绝缘树脂2与环氧树脂7紧密贴合。
在本实施方式中，在安装部件5的周边，在金属图案3中设置有狭缝8。利用该狭缝8的锚固效应抑制环氧树脂7的移动，由此能够抑制应力。另外，作为基板1的绝缘层而使用绝缘树脂2，减小与作为封装材料的环氧树脂7之间的线膨胀系数之差。由此，能够在不使用被覆膜的状态下，抑制在它们之间的界面处产生的应力。其结果，能够抑制制造成本的上升并且确保可靠性。
实施方式2
图3是将本发明的实施方式2所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，在安装部件5的4个角部设置有直线型的狭缝8。由此，能够抑制在安装部件5的角部处产生的应力。另外，为了充分地抑制应力，安装部件5与狭缝8的间隔D优选小于或等于5mm，狭缝8的宽度W优选大于或等于金属图案3的厚度。其他结构以及效果与实施方式1相同。
实施方式3
图4是将本发明的实施方式3所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，沿安装部件5的4个角部设置有L字型狭缝8。由此，能够进一步抑制在安装部件5的角部处产生的应力。另外，在安装部件5的安装时，L字型的狭缝8成为记号，因此能够抑制安装部件5的位置偏差。其他结构以及效果与实施方式1相同。
实施方式4
图5是将本发明的实施方式4所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，沿安装部件5的4个边设置有直线状狭缝8。由此，能够抑制在安装部件5的边处产生的应力。其他结构以及效果与实施方式1相同。
实施方式5
图6是将本发明的实施方式5所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，沿安装部件5的4个角部设置有L字型狭缝8，并且，沿安装部件5的4个边设置有直线状狭缝8。由此，能够得到实施方式3、4两者的效果。其他结构以及效果与实施方式1相同。
实施方式6
图7是将本发明的实施方式6所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，狭缝8对安装部件5的周围进行包围。由此，能够抑制在安装部件5的整个周围产生的应力。其他结构以及效果与实施方式1相同。
实施方式7
图8是将本发明的实施方式7所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，作为狭缝，设置有对安装部件5的周围进行包围的多个凹坑(dimple)9。由此，能够均匀地抑制在安装部件5的周围产生的应力。另外，与实施方式6相比，散热性较高。其他结构以及效果与实施方式1相同。
实施方式8
图9是将本发明的实施方式8所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，在相互分离的2个安装部件5之间的一部分处，设置有狭缝8。由此，能够维持相邻的2个安装部件5之间的导通，并且抑制在两者之间产生的应力。其他结构以及效果与实施方式1相同。
实施方式9
图10是将本发明的实施方式9所涉及的半导体装置的主要部分进行放大得到的俯视图。在本实施方式中，狭缝8为椭圆形。由此，能够将狭缝8的开口面积确保得较大，因此应力的抑制效果变大。另外，与直线型狭缝相比，能够获得较大的散热路径，因此散热性也较好。其他结构以及效果与实施方式1相同。
此外，在实施方式1～9中，安装部件5也可以是如热敏电阻这样横跨在2个金属图案3之间进行安装的电子部件。另外，实施方式1～9所涉及的半导体装置能够适用于逆变器系统。
另外，安装部件5不限于由硅形成的半导体芯片，也可以是由带隙比硅大的宽带隙半导体形成的。宽带隙半导体例如是碳化硅、氮化镓类材料、或者金刚石。由这种宽带隙半导体形成的半导体芯片由于耐电压性、允许电流密度较高，所以能够进行小型化。通过使用该小型化的半导体芯片，组装了该半导体芯片的半导体装置也能够进行小型化。另外，由于半导体芯片的耐热性较高，所以散热器的散热片也能够进行小型化，能够将水冷部进行空冷化，因而能够将半导体模块进一步小型化。另外，半导体芯片的功率损耗低、效率高，因而能够进行半导体模块的高效化。

Claims (7)

1.一种半导体装置，其特征在于，具备：
基板，其具有绝缘树脂和设置在所述绝缘树脂上的金属图案；
安装部件，其安装在所述金属图案上；以及
环氧树脂，其对所述金属图案以及所述安装部件进行封装，
在所述安装部件的周边，在所述金属图案的连为一体的部分中设置狭缝，
在所述狭缝处从所述金属图案露出的所述绝缘树脂与所述环氧树脂紧密贴合，
所述狭缝是沿所述安装部件的角部设置的L字型狭缝。
2.一种半导体装置，其特征在于，具备：
基板，其具有绝缘树脂和设置在所述绝缘树脂上的金属图案；
安装部件，其安装在所述金属图案上；以及
环氧树脂，其对所述金属图案以及所述安装部件进行封装，
在所述安装部件的周边，在所述金属图案的连为一体的部分中设置狭缝，
在所述狭缝处从所述金属图案露出的所述绝缘树脂与所述环氧树脂紧密贴合，
所述狭缝具有沿所述安装部件的角部设置的L字型狭缝、以及沿所述安装部件的边设置的直线状狭缝。
3.一种半导体装置，其特征在于，具备：
基板，其具有绝缘树脂和设置在所述绝缘树脂上的金属图案；
安装部件，其安装在所述金属图案上；以及
环氧树脂，其对所述金属图案以及所述安装部件进行封装，
在所述安装部件的周边，在所述金属图案的连为一体的部分中设置狭缝，
在所述狭缝处从所述金属图案露出的所述绝缘树脂与所述环氧树脂紧密贴合，
所述狭缝对所述安装部件的周围进行包围。
4.一种半导体装置，其特征在于，具备：
基板，其具有绝缘树脂和设置在所述绝缘树脂上的金属图案；
安装部件，其安装在所述金属图案上；以及
环氧树脂，其对所述金属图案以及所述安装部件进行封装，
在所述安装部件的周边，在所述金属图案的连为一体的部分中设置狭缝，
在所述狭缝处从所述金属图案露出的所述绝缘树脂与所述环氧树脂紧密贴合，
所述安装部件具有相互分离的2个安装部件，
所述狭缝设置在所述2个安装部件之间的一部分处。
5.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述安装部件与所述狭缝的间隔小于或等于5mm。
6.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述狭缝的宽度大于或等于所述金属图案的厚度。
7.根据权利要求1～4中任一项所述的半导体装置，其特征在于，
所述安装部件由宽带隙半导体形成。
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