CN105405454A - 用于高温应用的无电涂覆磁盘及其制造方法 - Google Patents
用于高温应用的无电涂覆磁盘及其制造方法 Download PDFInfo
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- CN105405454A CN105405454A CN201510738687.3A CN201510738687A CN105405454A CN 105405454 A CN105405454 A CN 105405454A CN 201510738687 A CN201510738687 A CN 201510738687A CN 105405454 A CN105405454 A CN 105405454A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052796 boron Inorganic materials 0.000 claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 229910052745 lead Inorganic materials 0.000 claims abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 239000003381 stabilizer Substances 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 10
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000008139 complexing agent Substances 0.000 claims description 8
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000002671 adjuvant Substances 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- 230000002829 reductive effect Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- VDTVZBCTOQDZSH-UHFFFAOYSA-N borane N-ethylethanamine Chemical compound B.CCNCC VDTVZBCTOQDZSH-UHFFFAOYSA-N 0.000 claims description 4
- 235000015165 citric acid Nutrition 0.000 claims description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 239000004310 lactic acid Substances 0.000 claims description 4
- 235000014655 lactic acid Nutrition 0.000 claims description 4
- 150000004027 organic amino compounds Chemical class 0.000 claims description 4
- 229940095064 tartrate Drugs 0.000 claims description 4
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 claims description 3
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 3
- 239000002113 nanodiamond Substances 0.000 claims description 3
- 150000002898 organic sulfur compounds Chemical class 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 2
- ODHZEGQLIOGNFQ-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;indium Chemical compound [In].OC(=O)CC(O)(C(O)=O)CC(O)=O ODHZEGQLIOGNFQ-UHFFFAOYSA-N 0.000 claims description 2
- JQZGUQIEPRIDMR-UHFFFAOYSA-N 3-methylbut-1-yn-1-ol Chemical compound CC(C)C#CO JQZGUQIEPRIDMR-UHFFFAOYSA-N 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 claims description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- PBJZEKIRGDSGMN-UHFFFAOYSA-N acetic acid;n'-(2-aminoethyl)ethane-1,2-diamine Chemical compound CC(O)=O.NCCNCCN PBJZEKIRGDSGMN-UHFFFAOYSA-N 0.000 claims description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000001014 amino acid Nutrition 0.000 claims description 2
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 claims description 2
- 239000011609 ammonium molybdate Substances 0.000 claims description 2
- 235000018660 ammonium molybdate Nutrition 0.000 claims description 2
- 229940010552 ammonium molybdate Drugs 0.000 claims description 2
- 239000003945 anionic surfactant Substances 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 229910000085 borane Inorganic materials 0.000 claims description 2
- 229910021538 borax Inorganic materials 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims description 2
- 239000006172 buffering agent Substances 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- LLVVIWYEOKVOFV-UHFFFAOYSA-L copper;diiodate Chemical compound [Cu+2].[O-]I(=O)=O.[O-]I(=O)=O LLVVIWYEOKVOFV-UHFFFAOYSA-L 0.000 claims description 2
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 claims description 2
- 229960003280 cupric chloride Drugs 0.000 claims description 2
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000337 indium(III) sulfate Inorganic materials 0.000 claims description 2
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 claims description 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 claims description 2
- YLYIXDZITBMCIW-UHFFFAOYSA-N n-hydroxy-n-phenylbenzamide Chemical compound C=1C=CC=CC=1N(O)C(=O)C1=CC=CC=C1 YLYIXDZITBMCIW-UHFFFAOYSA-N 0.000 claims description 2
- 229940078494 nickel acetate Drugs 0.000 claims description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- DITXJPASYXFQAS-UHFFFAOYSA-N nickel;sulfamic acid Chemical compound [Ni].NS(O)(=O)=O DITXJPASYXFQAS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- -1 permanganate Chemical compound 0.000 claims description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 2
- 239000012279 sodium borohydride Substances 0.000 claims description 2
- 239000011684 sodium molybdate Substances 0.000 claims description 2
- 235000015393 sodium molybdate Nutrition 0.000 claims description 2
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004328 sodium tetraborate Substances 0.000 claims description 2
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 2
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 2
- VZEZONWRBFJJMZ-UHFFFAOYSA-N 3-allyl-2-[2-(diethylamino)ethoxy]benzaldehyde Chemical compound CCN(CC)CCOC1=C(CC=C)C=CC=C1C=O VZEZONWRBFJJMZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011247 coating layer Substances 0.000 abstract 2
- 239000011651 chromium Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
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- 238000007772 electroless plating Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016525 CuMo Inorganic materials 0.000 description 1
- 229910017888 Cu—P Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- GANNOFFDYMSBSZ-UHFFFAOYSA-N [AlH3].[Mg] Chemical compound [AlH3].[Mg] GANNOFFDYMSBSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000008119 colloidal silica Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229940083575 sodium dodecyl sulfate Drugs 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/858—Producing a magnetic layer by electro-plating or electroless plating
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Abstract
本发明涉及用于高温应用的无电涂覆磁盘及其制造方法。本发明提供一种用于硬盘驱动器的磁盘。该磁盘包括含有铝的衬底以及设置在该衬底上的涂层。该涂层包括Ni、X1和X2的合金,其中X1包括从由Ag、Au、B、Cr、Cu、Ga、In、Mn、Mo、Nb、Pb、Sb、Se、Sn、Te、W、Zn和Zr构成的组中选择的一种或多于一种元素,且其中X2包括B或P,且其中X1和X2不包括相同的元素。
Description
本申请是申请日为2011年8月2日、名称为“用于高温应用的无电涂覆磁盘及其制造方法”的中国专利申请201110224268.X的分案申请。
技术领域
本发明一般涉及硬盘驱动器,并且特别涉及用于高温应用的无电涂覆磁盘及其制造方法。
背景技术
硬盘驱动器媒介中所用的磁盘通常包括铝-镁(AlMg)衬底,该衬底被镀覆诸如镍-磷(NiP)等材料以提供光滑表面,在该光滑表面上沉积磁记录层,数据可以被存储在该磁记录层上。为了适应对增加的数据存储空间的增长需求,未来的硬盘驱动器可以利用例如EAMR(能量辅助磁记录)等技术,该技术需要具有高磁各向异性(Ku)的磁记录层。这种磁记录层可以包括需要超过300℃的沉积温度的合金。然而,当前用于提供在其上沉积磁记录层的光滑表面的Ni-P涂料不能在不显著地增加表面粗糙度的情况下承受如此热的温度。
发明内容
本发明的各个实施例通过提供具有涂层的铝质磁盘来解决上述问题,该涂层具有增加的热稳定性以便用于高Ku的磁记录层。
根据主题公开的一个方面,一种用于硬盘驱动器的磁盘包括含有铝的衬底以及设置在该衬底上的涂层。该涂层包括Ni、X1和X2的合金,其中X1包括从由Ag、Au、B、Cr、Cu、Ga、In、Mn、Mo、Nb、Pb、Sb、Se、Sn、Te、W、Zn和Zr构成的组中选择的一种或多于一种元素,且其中X2包括B或P,且其中X1和X2不包括相同的元素。
根据主题公开的另一个方面,一种形成用于硬盘驱动器的磁盘的方法包括以下步骤:提供含有铝的衬底;在该衬底上设置锌酸盐层;以及在该锌酸盐层上无电镀覆涂层(化学镀覆涂层)。该涂层包括Ni、X1和X2的合金,其中X1包括从由Ag、Au、B、Cr、Cu、Ga、In、Mn、Mo、Nb、Pb、Sb、Se、Sn、Te、W、Zn和Zr构成的组中选择的一种或多于一种元素,且其中X2包括B或P,且其中X1和X2不包括相同的元素。
应该理解本发明的前述概要以及以下详细描述是示例性和解释性的,并且意欲提供对要求保护的本发明的进一步解释。
附图说明
附图被包括在说明书中以提供对本发明的进一步理解,并且被合并到说明书中以构成该说明书的一部分,这些附图图示说明本发明的实施例并且与说明书一起用于解释本发明的原理。在附图中:
图1图示说明根据主题公开的一个方面用在硬盘驱动器中的磁盘。
图2是流程图,其图示说明根据主题公开的一个方面形成用于硬盘驱动器的磁盘的方法。
具体实施方式
在以下详细描述中,阐述大量具体细节以提供对本发明的完整理解。然而,对本领域技术人员来说显而易见的是本发明可以在没有这些具体细节中的一些的情况下被实施。在其他示例中,众所周知的结构和技术未被详细显示以避免不必要地使本发明不清楚。
图1图示说明根据主题公开的一个方面用在硬盘驱动器中的磁盘100,其包括含有铝的衬底101以及设置在该衬底上的涂层103。衬底101可以包括例如铝(Al)和镁(Mg)的合金。涂层103包括Ni、X1和X2的合金,其中X1包括从由银(Ag)、金(Au)、硼(B)、铬(Cr)、铜(Cu)、镓(Ga)、铟(In)、锰(Mn)、钼(Mo)、铌(Nb)、铅(Pb)、锑(Sb)、硒(Se)、锡(Sn)、碲(Te)、钨(W)、锌(Zn)和锆(Zr)构成的组中选择的一种或多于一种元素,且其中X2包括硼(B)或磷(P),且其中X1和X2不包括相同的元素。根据主题公开的一个方面,涂层的厚度可以在大约1至20μm(微米)之间。
根据主题公开的一个方面,磁盘100可以进一步包括设置在衬底101与涂层103之间的锌酸盐层102。锌酸盐层102提供可有助于防止铝衬底101被氧化的屏障。根据主题公开的另一个方面,磁盘100可以还包括设置在涂层103上的磁记录层104。磁记录层104可以包括一种材料,该材料可能需要高温(例如300℃以上)沉积工艺,其包括例如Fe、Pt、Sm和Co中的一种或多于一种。
根据主题公开的某些方面,经抛光的AlMg/Ni-X1-X2磁盘与常规NiP涂覆的AlMg磁盘相比更易具有增加的热稳定性。例如,将Cu添加到NiP涂层合金有助于遏止Ni的磁性,该磁性由于Ni的结晶化和晶体成长而在高温(例如高于340℃)下的常规NiP涂层中形成。在这方面,根据主题公开的一个方面,X1可以包括Cu和另一种元素如从由B、In、Mo、Sn和W构成的组中选择的元素。相应地,根据主题公开的某些方面,例如该合金可以是四元合金如Ni-Cu-In-P(即此处X1包括Cu和In且X2包括P)、Ni-Cu-Mo-P(即此处X1包括Cu和Mo且X2包括P)或者Ni-Cu-B-P(即此处X1包括Cu和B且X2包括P)。
根据主题公开的一个方面,该合金可以包括重量百分比在大约30%和大约70%之间的Ni以及重量百分比在大约3%和大约11%之间的X2。X1的每种组分可以表示重量百分比在大约1.5%和大约42%之间的合金。
根据主题公开的一个方面,该涂层被抛光后在用原子力显微镜测量时可具有小于大约0.5nm(纳米)的粗糙度Ra。根据主题公开的一个方面,因为涂层的改进的热稳定性,它在被加热到大约450℃之后用原子力显微镜测量时维持小于大约1.0nm的粗糙度Ra。
图2是流程图,其图示说明根据主题公开的一个方面形成用于硬盘驱动器的磁盘的方法。该方法开始于步骤201,其中提供含有铝的衬底。在步骤202中,在衬底上设置锌酸盐层。根据主题公开的一个方面,该锌酸盐层可以在高ph值条件下在碱性水浴中被沉积。作为替代,该锌酸盐层可以通过酸性锌沉浸工艺而被沉积。
在步骤203中,通过无电镀膜法/化学镀膜法在锌酸盐层上提供涂层。该涂层包括Ni、X1和X2的合金,其中X1包括从由Ag、Au、B、Cr、Cu、Ga、In、Mn、Mo、Nb、Pb、Sb、Se、Sn、Te、W、Zn和Zr构成的组中选择的一种或多于一种元素,且其中X2包括B或P,且其中X1和X2不包括相同的元素。无电镀覆该涂层的步骤可以包括将衬底置于镀液中,该镀液包含:Ni和X1中的每一种的一种或多于一种金属源;用于还原该一种或多于一种金属源的还原剂,该还原剂包括X2;减少金属沉淀的一种或多于一种络合剂(complexor);一种或多于一种稳定剂;以及一种或多于一种pH值调节添加剂。
根据主题公开的一个方面,该镀液可以具有在大约5与大约9之间的pH值。这一pH值范围可以允许实现X1的每种组分在大约1.5%的重量百分比和大约42%的重量百分比之间。根据主题公开的另一个方面,当衬底被置于镀液中时该镀液可以被保持在大约160°F与大约195°F之间的温度下。
根据主题公开的一个方面,该镀液可以具有小于6的金属循环(MTO)(金属开缸量,metalturnover)。例如,根据主题公开的一个方面,镀液的MTO可以被保持在大约2.0与4.5之间。将MTO保持在这些水平可允许实现经济的镀覆性能和持续可复制的镀覆结果。在镀液的寿命期间,镀液中亚磷酸盐的离析可以被用于保持稳定的亚磷酸盐浓度。
根据主题公开的一个方面,Ni的一种或多于一种金属源可以包括硫酸镍、氨基磺酸镍、醋酸镍、氯化镍、次亚磷酸镍和氟硼酸镍中的一种或多于一种。根据主题公开的另一个方面,X1的一种或多于一种金属源可以包括硫酸铜、碘酸铜、碘化铜、氯化铜、柠檬酸铟、硫酸铟、醋酸铟、钼酸、钼酸铵、钼酸钠、钨酸铵、钨酸钠和氯化铟中的一种或多于一种。
根据主题公开的一个方面,还原剂可以包括次亚磷酸盐、次亚磷酸镍、二甲胺硼烷(DMAB)、二乙胺硼烷(DEAB)(diethylamineborane)、硼烷胺(amineborane)和硼氢化钠中的一种或多于一种。根据主题公开的另一个方面,一种或多于一种络合剂可以包括柠檬酸、苹果酸、乳酸、氨基酸、酒石酸、乙二胺四乙酸(EDTA)、羧酸及其任何盐中的一种或多于一种。
根据主题公开的一个方面,一种或多于一种稳定剂可以包括Bi、Cd、Cu、Hg、In、Mo、Pb、Sb和Sn的一种或多于一种阳离子、AsO-2、MoO-4、IO3 -、NO3 -、马来酸、衣康酸、甲基丁炔醇、N,N-二乙基-2-丙炔-1-胺和2-丁炔-1,4-二醇。根据主题公开的另一个方面,一种或多于一种稳定剂可以包括碘或其化合物。稳定剂可以帮助防止镀液的分解(例如,通过防止镀液中镍粒子的成核)。
根据主题公开的一个方面,一种或多于一种pH值调节添加剂可以包括K2CO3、Na2CO3、KHCO3、NaHCO3、NaOH、KOH、NH4OH和N(CH2CH3)3中的一种或多于一种。根据主题公开的另一个方面,一种或多于一种pH值调节添加剂可以包括从由硼酸、硼砂、三乙醇胺、三亚乙基五胺(triethylenepentamine)、二亚乙基三胺、醋酸盐、丙酸盐、琥珀酸盐和己二酸盐构成的组中选择的缓冲剂。
根据主题公开的一个方面,镀液还可以包括一种或多于一种分散剂、阴离子表面活性剂、非离子表面活性剂以及有机硫化合物(organosulfurcompound)。
在步骤204中,根据主题公开的一个方面,可以用浆料抛光所述涂层,该浆料包括水溶液中的研磨剂。例如,该研磨剂可以包括纳米金刚石、氧化铝、氧化钛、氧化锆、氧化锗、二氧化硅、二氧化铈及其混合物中的一种或多于一种。浆料的pH值在抛光过程中可以被保持在3和9之间。
根据主题公开的一个方面,该浆料还可以包括氧化剂、络合剂以及一种或多于一种有机氨基化合物。例如,该氧化剂可以包括一种或多于一种过氧化合物(例如过氧化氢)、尿素、高锰酸盐、硝酸盐和碘酸盐。例如,该络合剂可以包括柠檬酸、乳酸、酒石酸、琥珀酸、丙二酸、草酸、氨基酸或其盐类中的一种或多于一种。例如,该有机氨基化合物可以包括三乙醇胺等。
根据主题公开的一个方面,浆料还可以包括腐蚀抑制剂,该腐蚀抑制剂包括苯并三唑或苯甲酰苯基羟胺。根据主题公开的另一个方面,浆料还可以包括稳定剂,该稳定剂包括月桂基硫酸铵(ammoniumlaurylsulfate)、十二烷基硫酸钠(sodiumdodecylsulfate)和月桂基硫酸钠(sodiumlaurylsulfate)中的一种或多于一种。
根据主题公开的一个实验实施例,使用示例性抛光工艺来抛光涂覆有厚度为大约10μm的Ni-X1-P涂层的AlMg磁盘,该示例性抛光工艺包括在pH值为大约2的条件下的酸性抛光步骤以及在pH值为大约9下的第二抛光步骤。在第二抛光步骤中使用胶态硅石和/或纳米金刚石作为研磨剂。为了避免化学侵蚀,第二步骤的抛光浆料并不包含活泼的氧化剂如H2O2。第二抛光步骤是以小于0.02μm/min的极低去除速率进行的且留下Ni-X1-P表面,该表面在利用常规表面活化剂的清洗步骤之后是光滑且无缺陷的(例如在10μm×10μm面积上用AFM测得的Ra为0.2nm)。未观察到对Ni-X1-P涂层的侵蚀。
根据主题公开的各种实验实施例,经抛光的AlMg/Ni-X1-P(例如其中X1=Cu、CuMo或CuIn)磁盘与常规NiP涂覆的AlMg磁盘相比倾向于表现出增加的热稳定性。对涂覆有Ni-Cu-P的示例性AlMg磁盘进行的依赖温度的磁性测量显示出将Cu添加到涂层合金中有助于遏止Ni的磁性,该磁性由于Ni的结晶化和晶体成长而在高温(例如高于340℃)下的常规NiP层中形成。这在磁盘通过多模块制造类型的溅射机进行循环并且在真空(10-7至10-8托)中加热到大约450℃的温度时表现出来。磁盘在OD处由弹簧加载的不锈钢针脚支撑。针脚将磁盘固定地保持在扁板上,该扁板通过溅射机驱动至随后的沉积、加热和冷却模块。加热器台装配有两个电阻加热器线圈,其通过辐射加热磁盘的每侧。为了测量,没有将额外的涂料施加到磁盘上。每个磁盘的表面温度由高温计测量,该高温计在磁盘被移出加热器腔室之后立即探查磁盘表面的温度。施加大约1300W的加热器功率大约10秒,以将磁盘温度提升到大约450℃。在加热之后,磁盘被移出溅射机而不经过冷却台。没有任何磁盘被弯曲或者表现出OD叮当声或加热导致的其他损伤。常规AlMg/Ni-P磁盘上的涂层在测试之后具有模糊的外观,说明表面粗糙度具有显著的增加(随后由AFM确认)。具有Ni-X1-P涂层的磁盘的表面保持着像镜子一样闪亮。对这些磁盘进行的AFMRa测量确认了该涂料在大约450℃的温度下也不退化。
本发明的说明书被提供以使得本领域的任何技术人员都能够实施在此描述的各种实施例。虽然通过参考各种附图和实施例特别描述了本发明,但应该理解的是这些仅是为了图示说明的目的,而不应视为是对本发明的限制。
可能存在很多其他方式来实施本发明。本文描述的各种功能和元件可以不同于所显示的那样被划分,而不偏离本发明的精神和范围。对于本领域技术人员来说,这些实施例的多种修改将是显而易见的,且本文限定的一般原理可以应用于其他实施例。因此,本领域技术人员可以对本发明做出很多变化和修改,而不偏离本发明的精神和范围。
除非有特别说明,以单数形式引用一元件并不意味着“一个且仅有一个”,而是“一个或多于一个”。术语“一些”指的是一个或多于一个。有下划线和/或斜体字的标题和子标题仅用于方便,而不限制本发明,且不涉及对本发明描述的解释。本公开通篇描述的本发明各种实施例的一些元件对于本领域技术人员来说是已知的或稍后知道的,其所有结构性和功能性等价物通过引用明确地合并于此并意欲被本发明所包含。此外,本文公开的所有内容都不意欲奉献给公众,不管这种公开是否被清楚地记载在前面的说明书中。
Claims (24)
1.一种形成用于硬盘驱动器的磁盘的方法,所述方法包括以下步骤:
提供含有铝的衬底;
在所述衬底上设置锌酸盐层;以及
在所述锌酸盐层上无电镀覆涂层,所述涂层包括Ni、X1和X2的合金,其中X1包括从由Ag、Au、B、Cr、Cu、Ga、In、Mn、Mo、Nb、Pb、Sb、Se、Sn、Te、W、Zn和Zr构成的组中选择的一种或多于一种元素,且其中X2包括B或P,且其中X1和X2不包括相同的元素。
2.如权利要求1所述的方法,其中无电镀覆所述涂层的步骤包括:
将所述衬底置于镀液中,所述镀液包含:
Ni和X1中的每一种的一种或多于一种金属源;
用于还原所述一种或多于一种金属源的还原剂,所述还原剂包括X2;
减少金属沉淀的一种或多于一种络合剂;
一种或多于一种稳定剂;以及
一种或多于一种pH值调节添加剂。
3.如权利要求2所述的方法,其中所述镀液具有在大约5与大约9之间的pH值。
4.如权利要求2所述的方法,其中当所述衬底被置于所述镀液中时所述镀液被保持在大约160°F与大约195°F之间的温度下。
5.如权利要求2所述的方法,其中所述镀液具有小于6的金属循环MTO。
6.如权利要求5所述的方法,其中所述镀液的所述MTO被保持在大约2.0与4.5之间。
7.如权利要求2所述的方法,其中Ni的所述一种或多于一种金属源包括硫酸镍、氨基磺酸镍、醋酸镍、氯化镍、次亚磷酸镍和氟硼酸镍中的一种或多于一种。
8.如权利要求2所述的方法,其中X1的所述一种或多于一种金属源包括硫酸铜、碘酸铜、碘化铜、氯化铜、柠檬酸铟、硫酸铟、醋酸铟、钼酸、钼酸铵、钼酸钠、钨酸铵、钨酸钠和氯化铟中的一种或多于一种。
9.如权利要求2所述的方法,其中所述还原剂包括次亚磷酸盐、次亚磷酸镍、二甲胺硼烷DMAB、二乙胺硼烷DEAB、硼烷胺和硼氢化钠中的一种或多于一种。
10.如权利要求2所述的方法,其中所述一种或多于一种络合剂包括柠檬酸、苹果酸、乳酸、氨基酸、酒石酸、乙二胺四乙酸EDTA、羧酸及其任何盐中的一种或多于一种。
11.如权利要求2所述的方法,其中所述一种或多于一种稳定剂包括Bi、Cd、Cu、Hg、In、Mo、Pb、Sb和Sn的一种或多于一种阳离子、AsO-2、MoO-4、IO3 -、NO3 -、马来酸、衣康酸、甲基丁炔醇、N,N-二乙基-2-丙炔-1-胺和2-丁炔-1,4-二醇。
12.如权利要求2所述的方法,其中所述一种或多于一种稳定剂包括碘或其化合物。
13.如权利要求2所述的方法,其中所述一种或多于一种pH值调节添加剂包括K2CO3、Na2CO3、KHCO3、NaHCO3、NaOH、KOH、NH4OH和N(CH2CH3)3中的一种或多于一种。
14.如权利要求2所述的方法,其中所述一种或多于一种pH值调节添加剂包括从由硼酸、硼砂、三乙醇胺、三亚乙基五胺、二亚乙基三胺、醋酸盐、丙酸盐、琥珀酸盐和己二酸盐构成的组中选择的缓冲剂。
15.如权利要求2所述的方法,其中所述镀液还包括一种或多于一种分散剂、阴离子表面活性剂、非离子表面活性剂以及有机硫化合物。
16.如权利要求2所述的方法,其还包括用浆料抛光所述涂层,所述浆料包括水溶液中的研磨剂。
17.如权利要求16所述的方法,其中所述研磨剂包括纳米金刚石、氧化铝、氧化钛、氧化锆、氧化锗、二氧化硅、二氧化铈及其混合物中的一种或多于一种。
18.如权利要求16所述的方法,其中所述浆料还包括氧化剂、络合剂以及一种或多于一种有机氨基化合物。
19.如权利要求18所述的方法,其中所述氧化剂包括一种或多于一种过氧化合物、尿素、高锰酸盐、硝酸盐和碘酸盐。
20.如权利要求18所述的方法,其中所述络合剂包括柠檬酸、乳酸、酒石酸、琥珀酸、丙二酸、草酸、氨基酸或其盐类中的一种或多于一种。
21.如权利要求18所述的方法,其中所述一种或多于一种有机氨基化合物包括三乙醇胺。
22.如权利要求16所述的方法,其中所述浆料还包括腐蚀抑制剂,所述腐蚀抑制剂包括苯并三唑或苯甲酰苯基羟胺。
23.如权利要求16所述的方法,其中所述浆料还包括稳定剂,所述稳定剂包括月桂基硫酸铵、十二烷基硫酸钠和月桂基硫酸钠中的一种或多于一种。
24.如权利要求16所述的方法,其中所述浆料的pH值在抛光过程中被保持在3和9之间。
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Families Citing this family (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5117895B2 (ja) | 2008-03-17 | 2013-01-16 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 磁気記録媒体及びその製造方法 |
JP2009238299A (ja) | 2008-03-26 | 2009-10-15 | Hoya Corp | 垂直磁気記録媒体および垂直磁気記録媒体の製造方法 |
JP5453666B2 (ja) * | 2008-03-30 | 2014-03-26 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 磁気ディスク及びその製造方法 |
WO2010038773A1 (ja) | 2008-09-30 | 2010-04-08 | Hoya株式会社 | 磁気ディスク及びその製造方法 |
WO2010064724A1 (ja) | 2008-12-05 | 2010-06-10 | Hoya株式会社 | 磁気ディスク及びその製造方法 |
US9558778B2 (en) | 2009-03-28 | 2017-01-31 | Wd Media (Singapore) Pte. Ltd. | Lubricant compound for magnetic disk and magnetic disk |
US8431258B2 (en) | 2009-03-30 | 2013-04-30 | Wd Media (Singapore) Pte. Ltd. | Perpendicular magnetic recording medium and method of manufacturing the same |
US20100300884A1 (en) | 2009-05-26 | 2010-12-02 | Wd Media, Inc. | Electro-deposited passivation coatings for patterned media |
US9330685B1 (en) | 2009-11-06 | 2016-05-03 | WD Media, LLC | Press system for nano-imprinting of recording media with a two step pressing method |
US8496466B1 (en) | 2009-11-06 | 2013-07-30 | WD Media, LLC | Press system with interleaved embossing foil holders for nano-imprinting of recording media |
JP5643516B2 (ja) | 2010-01-08 | 2014-12-17 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 垂直磁気記録媒体 |
JP5574414B2 (ja) | 2010-03-29 | 2014-08-20 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 磁気ディスクの評価方法及び磁気ディスクの製造方法 |
JP5634749B2 (ja) | 2010-05-21 | 2014-12-03 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 垂直磁気ディスク |
JP5645476B2 (ja) | 2010-05-21 | 2014-12-24 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 垂直磁気ディスク |
JP2011248968A (ja) | 2010-05-28 | 2011-12-08 | Wd Media (Singapore) Pte. Ltd | 垂直磁気ディスク |
JP2011248969A (ja) | 2010-05-28 | 2011-12-08 | Wd Media (Singapore) Pte. Ltd | 垂直磁気ディスク |
JP2011248967A (ja) | 2010-05-28 | 2011-12-08 | Wd Media (Singapore) Pte. Ltd | 垂直磁気ディスクの製造方法 |
JP2012009086A (ja) | 2010-06-22 | 2012-01-12 | Wd Media (Singapore) Pte. Ltd | 垂直磁気記録媒体及びその製造方法 |
US8404369B2 (en) | 2010-08-03 | 2013-03-26 | WD Media, LLC | Electroless coated disks for high temperature applications and methods of making the same |
US8889275B1 (en) | 2010-08-20 | 2014-11-18 | WD Media, LLC | Single layer small grain size FePT:C film for heat assisted magnetic recording media |
MY166049A (en) | 2010-09-03 | 2018-05-22 | Omg Electronic Chemicals Llc | Electroless nickel alloy plating bath and process for depositing thereof |
US8743666B1 (en) | 2011-03-08 | 2014-06-03 | Western Digital Technologies, Inc. | Energy assisted magnetic recording medium capable of suppressing high DC readback noise |
US8711499B1 (en) | 2011-03-10 | 2014-04-29 | WD Media, LLC | Methods for measuring media performance associated with adjacent track interference |
US8491800B1 (en) | 2011-03-25 | 2013-07-23 | WD Media, LLC | Manufacturing of hard masks for patterning magnetic media |
US9028985B2 (en) | 2011-03-31 | 2015-05-12 | WD Media, LLC | Recording media with multiple exchange coupled magnetic layers |
US8565050B1 (en) | 2011-12-20 | 2013-10-22 | WD Media, LLC | Heat assisted magnetic recording media having moment keeper layer |
US9029308B1 (en) | 2012-03-28 | 2015-05-12 | WD Media, LLC | Low foam media cleaning detergent |
US9269480B1 (en) | 2012-03-30 | 2016-02-23 | WD Media, LLC | Systems and methods for forming magnetic recording media with improved grain columnar growth for energy assisted magnetic recording |
US8941950B2 (en) | 2012-05-23 | 2015-01-27 | WD Media, LLC | Underlayers for heat assisted magnetic recording (HAMR) media |
US8993134B2 (en) | 2012-06-29 | 2015-03-31 | Western Digital Technologies, Inc. | Electrically conductive underlayer to grow FePt granular media with (001) texture on glass substrates |
US9034492B1 (en) | 2013-01-11 | 2015-05-19 | WD Media, LLC | Systems and methods for controlling damping of magnetic media for heat assisted magnetic recording |
US10115428B1 (en) | 2013-02-15 | 2018-10-30 | Wd Media, Inc. | HAMR media structure having an anisotropic thermal barrier layer |
US9153268B1 (en) | 2013-02-19 | 2015-10-06 | WD Media, LLC | Lubricants comprising fluorinated graphene nanoribbons for magnetic recording media structure |
TWI559381B (zh) | 2013-02-19 | 2016-11-21 | 應用材料股份有限公司 | 金屬合金薄膜的原子層沉積 |
US9183867B1 (en) | 2013-02-21 | 2015-11-10 | WD Media, LLC | Systems and methods for forming implanted capping layers in magnetic media for magnetic recording |
US9196283B1 (en) | 2013-03-13 | 2015-11-24 | Western Digital (Fremont), Llc | Method for providing a magnetic recording transducer using a chemical buffer |
US9190094B2 (en) | 2013-04-04 | 2015-11-17 | Western Digital (Fremont) | Perpendicular recording media with grain isolation initiation layer and exchange breaking layer for signal-to-noise ratio enhancement |
US9093122B1 (en) | 2013-04-05 | 2015-07-28 | WD Media, LLC | Systems and methods for improving accuracy of test measurements involving aggressor tracks written to disks of hard disk drives |
US8947987B1 (en) | 2013-05-03 | 2015-02-03 | WD Media, LLC | Systems and methods for providing capping layers for heat assisted magnetic recording media |
US8867322B1 (en) | 2013-05-07 | 2014-10-21 | WD Media, LLC | Systems and methods for providing thermal barrier bilayers for heat assisted magnetic recording media |
US9296082B1 (en) | 2013-06-11 | 2016-03-29 | WD Media, LLC | Disk buffing apparatus with abrasive tape loading pad having a vibration absorbing layer |
EP3012000B1 (en) | 2013-06-18 | 2018-02-21 | National University Corporation Yokohama National University | Fire extinguishing agent and fire extinguishing method |
US9406330B1 (en) | 2013-06-19 | 2016-08-02 | WD Media, LLC | Method for HDD disk defect source detection |
US9607646B2 (en) | 2013-07-30 | 2017-03-28 | WD Media, LLC | Hard disk double lubrication layer |
US9389135B2 (en) | 2013-09-26 | 2016-07-12 | WD Media, LLC | Systems and methods for calibrating a load cell of a disk burnishing machine |
US9177585B1 (en) | 2013-10-23 | 2015-11-03 | WD Media, LLC | Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording |
US9581510B1 (en) | 2013-12-16 | 2017-02-28 | Western Digital Technologies, Inc. | Sputter chamber pressure gauge with vibration absorber |
US9382496B1 (en) | 2013-12-19 | 2016-07-05 | Western Digital Technologies, Inc. | Lubricants with high thermal stability for heat-assisted magnetic recording |
US9824711B1 (en) | 2014-02-14 | 2017-11-21 | WD Media, LLC | Soft underlayer for heat assisted magnetic recording media |
US9447368B1 (en) | 2014-02-18 | 2016-09-20 | WD Media, LLC | Detergent composition with low foam and high nickel solubility |
US9431045B1 (en) | 2014-04-25 | 2016-08-30 | WD Media, LLC | Magnetic seed layer used with an unbalanced soft underlayer |
US9042053B1 (en) | 2014-06-24 | 2015-05-26 | WD Media, LLC | Thermally stabilized perpendicular magnetic recording medium |
US9159350B1 (en) | 2014-07-02 | 2015-10-13 | WD Media, LLC | High damping cap layer for magnetic recording media |
JP6391331B2 (ja) * | 2014-07-07 | 2018-09-19 | 古河電気工業株式会社 | 磁気記録媒体用金属部材および磁気記録媒体 |
US10054363B2 (en) | 2014-08-15 | 2018-08-21 | WD Media, LLC | Method and apparatus for cryogenic dynamic cooling |
CN104233160B (zh) * | 2014-09-11 | 2017-03-15 | 芜湖鼎瀚再制造技术有限公司 | 一种Mo‑Cu‑B涂层及其制备方法 |
US9082447B1 (en) | 2014-09-22 | 2015-07-14 | WD Media, LLC | Determining storage media substrate material type |
US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
US8995078B1 (en) | 2014-09-25 | 2015-03-31 | WD Media, LLC | Method of testing a head for contamination |
US9227324B1 (en) | 2014-09-25 | 2016-01-05 | WD Media, LLC | Mandrel for substrate transport system with notch |
US9449633B1 (en) | 2014-11-06 | 2016-09-20 | WD Media, LLC | Smooth structures for heat-assisted magnetic recording media |
EP3026143A1 (en) * | 2014-11-26 | 2016-06-01 | ATOTECH Deutschland GmbH | Plating bath and method for electroless deposition of nickel layers |
US9818442B2 (en) | 2014-12-01 | 2017-11-14 | WD Media, LLC | Magnetic media having improved magnetic grain size distribution and intergranular segregation |
US9401300B1 (en) | 2014-12-18 | 2016-07-26 | WD Media, LLC | Media substrate gripper including a plurality of snap-fit fingers |
US9218850B1 (en) | 2014-12-23 | 2015-12-22 | WD Media, LLC | Exchange break layer for heat-assisted magnetic recording media |
US9257134B1 (en) | 2014-12-24 | 2016-02-09 | Western Digital Technologies, Inc. | Allowing fast data zone switches on data storage devices |
US9990940B1 (en) | 2014-12-30 | 2018-06-05 | WD Media, LLC | Seed structure for perpendicular magnetic recording media |
US9280998B1 (en) | 2015-03-30 | 2016-03-08 | WD Media, LLC | Acidic post-sputter wash for magnetic recording media |
US9822441B2 (en) | 2015-03-31 | 2017-11-21 | WD Media, LLC | Iridium underlayer for heat assisted magnetic recording media |
US9275669B1 (en) | 2015-03-31 | 2016-03-01 | WD Media, LLC | TbFeCo in PMR media for SNR improvement |
US11074934B1 (en) | 2015-09-25 | 2021-07-27 | Western Digital Technologies, Inc. | Heat assisted magnetic recording (HAMR) media with Curie temperature reduction layer |
US10236026B1 (en) | 2015-11-06 | 2019-03-19 | WD Media, LLC | Thermal barrier layers and seed layers for control of thermal and structural properties of HAMR media |
US9406329B1 (en) | 2015-11-30 | 2016-08-02 | WD Media, LLC | HAMR media structure with intermediate layer underlying a magnetic recording layer having multiple sublayers |
JP6646551B2 (ja) * | 2015-12-25 | 2020-02-14 | 昭和電工株式会社 | 磁気記録媒体用基板 |
US10121506B1 (en) | 2015-12-29 | 2018-11-06 | WD Media, LLC | Magnetic-recording medium including a carbon overcoat implanted with nitrogen and hydrogen |
US9697859B1 (en) | 2016-04-01 | 2017-07-04 | WD Media, LLC | Heat-assisted magnetic recording (HAMR) medium including a bi-layer that enables use of lower laser current in write operations |
JP6574740B2 (ja) * | 2016-07-08 | 2019-09-11 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
US10184189B2 (en) | 2016-07-18 | 2019-01-22 | ECSI Fibrotools, Inc. | Apparatus and method of contact electroplating of isolated structures |
JP6803228B2 (ja) * | 2016-12-27 | 2020-12-23 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
US10699738B2 (en) | 2016-12-27 | 2020-06-30 | Showa Denko K.K. | Base for magnetic recording medium, and HDD |
JP6740121B2 (ja) * | 2016-12-27 | 2020-08-12 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
JP6740120B2 (ja) * | 2016-12-27 | 2020-08-12 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
JP6832179B2 (ja) * | 2017-02-03 | 2021-02-24 | 昭和電工株式会社 | 磁気記録媒体用基板およびハードディスクドライブ |
CN108300983B (zh) * | 2017-12-30 | 2020-04-10 | 苏州赛尔科技有限公司 | 高能效轮毂型镍基刀片及其制备方法 |
CN108559979B (zh) * | 2018-01-24 | 2020-05-08 | 永星化工(上海)有限公司 | 一种化学镀镍液及其制备方法 |
US20200045831A1 (en) * | 2018-08-03 | 2020-02-06 | Hutchinson Technology Incorporated | Method of forming material for a circuit using nickel and phosphorous |
CN109280907A (zh) * | 2018-09-29 | 2019-01-29 | 世程新材料科技(武汉)有限公司 | 超细线镀镍液、镀镍工艺、镀镍层及印制电路板 |
WO2023101770A1 (en) * | 2021-11-30 | 2023-06-08 | Coventya, Inc. | Electroless antipathogenic coating |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6106927A (en) * | 1998-02-03 | 2000-08-22 | Seagate Technology, Inc. | Ultra-smooth as-deposited electroless nickel coatings |
US6143375A (en) * | 1999-01-28 | 2000-11-07 | Komag, Incorporated | Method for preparing a substrate for a magnetic disk |
US20040161635A1 (en) * | 2000-09-15 | 2004-08-19 | Seagate Technology Llc. | Using plated surface for recording media without polishing |
CN101044600A (zh) * | 2004-10-28 | 2007-09-26 | 卡伯特微电子公司 | 包含表面活性剂的化学机械抛光(cmp)组合物 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567066A (en) * | 1983-08-22 | 1986-01-28 | Enthone, Incorporated | Electroless nickel plating of aluminum |
US4659605A (en) | 1984-05-16 | 1987-04-21 | Richardson Chemical Company | Electroless deposition magnetic recording media process and products produced thereby |
JPH0258729A (ja) * | 1988-08-24 | 1990-02-27 | Nec Corp | 磁気ディスク基板およびその製造方法 |
JPH0573881A (ja) * | 1991-09-17 | 1993-03-26 | Hitachi Ltd | 磁気記録媒体およびその製造方法 |
JP2724067B2 (ja) | 1992-01-17 | 1998-03-09 | 株式会社クボタ | 金属薄膜型磁気記録媒体 |
US5437779A (en) * | 1992-12-11 | 1995-08-01 | Mitsubishi Chemical Corporation | Method of making a magnetic record medium |
JP2834380B2 (ja) | 1993-03-15 | 1998-12-09 | ストアメディア インコーポレーテッド | 金属薄膜型磁気記録媒体 |
JP3045068B2 (ja) * | 1996-03-21 | 2000-05-22 | 富士電機株式会社 | 磁気記録媒体及びその製造方法 |
US6316097B1 (en) | 1998-09-28 | 2001-11-13 | Seagate Technology Llc | Electroless plating process for alternative memory disk substrates |
JP2001028117A (ja) | 1999-07-12 | 2001-01-30 | Fujitsu Ltd | ディスク媒体 |
US6680133B2 (en) | 1999-12-08 | 2004-01-20 | Showa Denko Kabushiki Kaisha | Magnetic recording medium and sputtering target |
US6620531B1 (en) | 1999-12-20 | 2003-09-16 | Seagate Technology Llc | Magnetic recording media with oxidized seedlayer for reduced grain size and reduced grain size distribution |
US6524724B1 (en) | 2000-02-11 | 2003-02-25 | Seagate Technology Llc | Control of magnetic film grain structure by modifying Ni-P plating of the substrate |
US6977030B2 (en) | 2000-11-21 | 2005-12-20 | Leonard Nanis | Method of coating smooth electroless nickel on magnetic memory disks and related memory devices |
JP3666853B2 (ja) * | 2001-01-25 | 2005-06-29 | 高橋 研 | 磁気記録媒体、その製造方法および磁気記録装置 |
JP2003099911A (ja) | 2001-09-26 | 2003-04-04 | Fujitsu Ltd | 磁気記録媒体及びその製造方法 |
US20040031694A1 (en) * | 2002-02-06 | 2004-02-19 | Li-Qun Feng | Commercial process for electroplating nickel-phosphorus coatings |
US6866255B2 (en) * | 2002-04-12 | 2005-03-15 | Xerox Corporation | Sputtered spring films with low stress anisotropy |
US6709561B1 (en) * | 2002-11-06 | 2004-03-23 | Eci Technology, Inc. | Measurement of the concentration of a reducing agent in an electroless plating bath |
EP1577883A4 (en) | 2002-12-26 | 2008-03-19 | Fujitsu Ltd | VERTICAL MAGNETIC RECORDING MEDIUM |
JP4023408B2 (ja) | 2003-02-04 | 2007-12-19 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体用基板、垂直磁気記録媒体及びそれらの製造方法 |
US20090280357A1 (en) * | 2003-06-03 | 2009-11-12 | Seagate Technology Llc | Perpendicular magnectic recording media with improved fcc au-containing interplayers |
US6858331B1 (en) * | 2003-08-29 | 2005-02-22 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic thin film media with a bi-layer structure of CrTi/Nip |
US7407720B2 (en) * | 2003-10-17 | 2008-08-05 | Seagate Technology Llc | Interlayer design for magnetic media |
JP2006031875A (ja) * | 2004-07-20 | 2006-02-02 | Fujitsu Ltd | 記録媒体基板および記録媒体 |
US20060222903A1 (en) * | 2005-03-31 | 2006-10-05 | Canon Kabushiki Kaisha | Structure and process for production thereof |
US20090130346A1 (en) * | 2005-08-11 | 2009-05-21 | Showa Denko K.K. | Magnetic Recording Medium, Production Process Thereof, and Magnetic Recording and Reproducing Apparatus |
US8241766B2 (en) * | 2006-01-20 | 2012-08-14 | Seagate Technology Llc | Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording |
CN101038754A (zh) * | 2006-09-14 | 2007-09-19 | 山西师范大学 | 一种超高密度垂直磁记录介质及其制备方法 |
JP2008210446A (ja) * | 2007-02-26 | 2008-09-11 | Fujitsu Ltd | 磁気記録媒体およびその製造方法 |
JP5088629B2 (ja) * | 2008-08-22 | 2012-12-05 | 昭和電工株式会社 | 磁気記録媒体および磁気記録再生装置 |
JP5250838B2 (ja) * | 2009-01-27 | 2013-07-31 | 昭和電工株式会社 | 磁気記録媒体の製造方法及び磁気記録媒体、並びに磁気記録再生装置 |
US8404369B2 (en) | 2010-08-03 | 2013-03-26 | WD Media, LLC | Electroless coated disks for high temperature applications and methods of making the same |
-
2010
- 2010-08-03 US US12/849,783 patent/US8404369B2/en active Active
-
2011
- 2011-08-02 CN CN201510738687.3A patent/CN105405454A/zh active Pending
- 2011-08-02 CN CN201110224268.XA patent/CN102610241B/zh active Active
-
2013
- 2013-01-07 HK HK13100194.9A patent/HK1172993A1/zh not_active IP Right Cessation
- 2013-03-04 US US13/783,660 patent/US8828482B1/en active Active
-
2016
- 2016-09-08 HK HK16110692.2A patent/HK1222740A1/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6106927A (en) * | 1998-02-03 | 2000-08-22 | Seagate Technology, Inc. | Ultra-smooth as-deposited electroless nickel coatings |
US6143375A (en) * | 1999-01-28 | 2000-11-07 | Komag, Incorporated | Method for preparing a substrate for a magnetic disk |
US20040161635A1 (en) * | 2000-09-15 | 2004-08-19 | Seagate Technology Llc. | Using plated surface for recording media without polishing |
CN101044600A (zh) * | 2004-10-28 | 2007-09-26 | 卡伯特微电子公司 | 包含表面活性剂的化学机械抛光(cmp)组合物 |
Also Published As
Publication number | Publication date |
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CN102610241B (zh) | 2015-12-09 |
US8828482B1 (en) | 2014-09-09 |
CN102610241A (zh) | 2012-07-25 |
HK1172993A1 (zh) | 2013-05-03 |
HK1222740A1 (zh) | 2017-07-07 |
US8404369B2 (en) | 2013-03-26 |
US20120034492A1 (en) | 2012-02-09 |
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