JP2009538003A - 軟磁性を有するフィルム - Google Patents
軟磁性を有するフィルム Download PDFInfo
- Publication number
- JP2009538003A JP2009538003A JP2009512337A JP2009512337A JP2009538003A JP 2009538003 A JP2009538003 A JP 2009538003A JP 2009512337 A JP2009512337 A JP 2009512337A JP 2009512337 A JP2009512337 A JP 2009512337A JP 2009538003 A JP2009538003 A JP 2009538003A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- plating tank
- tesla
- μohm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 23
- 239000010941 cobalt Substances 0.000 claims abstract description 23
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 16
- 239000011574 phosphorus Substances 0.000 claims abstract description 16
- 230000004907 flux Effects 0.000 claims abstract description 15
- 230000035699 permeability Effects 0.000 claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 239000010937 tungsten Substances 0.000 claims abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 14
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 9
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 5
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 claims description 5
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 5
- 239000008139 complexing agent Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 3
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000006174 pH buffer Substances 0.000 claims 2
- 229940063013 borate ion Drugs 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 3
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- -1 borate ions Chemical class 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000006179 pH buffering agent Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 231100000315 carcinogenic Toxicity 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000469 dry deposition Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1673—Magnetic field
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/858—Producing a magnetic layer by electro-plating or electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/85—Coating a support with a magnetic layer by vapour deposition
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/852—Orientation in a magnetic field
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Magnetic Films (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
Claims (31)
- コバルト、ボロン、ならびに、タングステンおよびリンの少なくとも1つを含む材料であって、前記材料は、
約20μOhm−cmと約1000μOhm−cmとの間の抵抗率、
約0.1テスラと約1.8テスラとの間の飽和磁束密度、
約5エルステッドより小さい飽和保磁力、および、
約100と約2000との間の比透磁率、
を有することを特徴とする材料。 - 前記材料は、基板を被覆しかつ約0.4マイクロメータの厚さを有するフィルムを含むことを特徴とする請求項1記載の材料。
- 前記材料は、タングステンおよびリンの両方を含むことを特徴とする請求項1記載の材料。
- 前記抵抗率は、約50μOhm−cmと約500μOhm−cmとの間であることを特徴とする請求項1記載の材料。
- 前記飽和磁束密度は、約0.5テスラと約1.6テスラとの間であることを特徴とする請求項1記載の材料。
- 前記飽和保磁力は、約0.001エルステッドと約2.0エルステッドとの間であることを特徴とする請求項1記載の材料。
- 前記比透磁率は、約700と約1000との間であることを特徴とする請求項1記載の材料。
- 1リットル当たり約0.01モルと約0.05モルとの間の濃度である1次金属と、
1リットル当たり約0.1モルと約0.5モルとの間の濃度である錯化剤と、
1リットル当たり約0.001モルと約0.05モルとの間の濃度である2次金属と、
1リットル当たり約0.5モルと約1.0モルとの間の濃度であるpH緩衝剤と、
1リットル当たり約0.02モルと約0.1モルとの間の濃度である第1還元剤と、
1リットル当たり約0.02と約0.1モルとの間の濃度である第2還元剤と、
を含むことを特徴とするめっき槽。 - 前記めっき槽のpHレベルは、約7.5と約9.7との間であることを特徴とする請求項8記載のめっき槽。
- 前記めっき槽の温度は、摂氏約60度と約90度との間であることを特徴とする請求項8記載のめっき槽。
- 前記1次金属は、(+2)の酸化状態をとるコバルトを含むことを特徴とする請求項8記載のめっき槽。
- 前記錯化剤は、クエン酸塩を含むことを特徴とする請求項8記載のめっき槽。
- 前記2次金属は、タングステン酸塩を含むことを特徴とする請求項8記載のめっき槽。
- 前記pH緩衝剤は、ホウ酸塩を含むことを特徴とする請求項8記載のめっき槽。
- 前記第1還元剤は、次亜リン酸塩を含むことを特徴とする請求項8記載のめっき槽。
- 前記次亜リン酸塩は、アンモニウム次亜リン酸塩を含むことを特徴とする請求項15記載のめっき槽。
- 前記第2還元剤は、ジメチルアミンボランを含むことを特徴とする請求項8記載のめっき槽。
- 基板を提供する段階と、
前記基板上にシード層を形成する段階と、
前記シード層上にフィルムを形成する段階であって、前記フィルムは、少なくとも約100μOhm−cmの抵抗率および少なくとも約1.0テスラの飽和磁束密度を有する、段階と、
から成ることを特徴とする方法。 - 前記フィルムを形成する段階は、CoWBPフィルムを形成する段階を含むことを特徴とする請求項18記載の方法。
- 前記CoWBPフィルムは、約0.001エルステッドよりも大きくない飽和保磁力、および、少なくとも約700の比透磁率を有することを特徴とする請求項19記載の方法。
- 前記シード層を形成する段階は、銅、コバルト、ニッケル、プラチナ、パラジウム、ルテニウム、鉄、およびそれらの合金から成るグループから選択された物質を含む材料を堆積する段階を含むことを特徴とする請求項18記載の方法。
- 前記シード層を形成するために前記材料を堆積する段階は、蒸着法を用いて前記材料を堆積する段階を含むことを特徴とする請求項21記載の方法。
- 前記フィルムを形成する段階は、前記フィルムを無電解で堆積する段階を含むことを特徴とする請求項18記載の方法。
- 前記基板の表面に磁界を加える段階をさらに含むことを特徴とする請求項18記載の方法。
- 前記磁界を加える段階は、前記基板の前記表面に対して平行またはほぼ平行に、約100エルステッドより大きな強さで前記磁界を加える段階を含むことを特徴とする請求項24記載の方法。
- 前記磁界を加える段階は、約500エルステッドと約1000エルステッドとの間の強さで前記磁界を加える段階を含むことを特徴とする請求項25記載の方法。
- 基板上にコバルト合金フィルムを形成する方法であって、前記方法は、
コバルト・イオン、
ある量のクエン酸塩、
ホウ酸塩イオン、
ある量のジメチルアミンボラン、および、
タングステン酸塩イオンおよびリン含有化合物の少なくとも1つ、
を含む溶液を提供する段階と、
前記基板に前記溶液を加えることによって、前記コバルト合金フィルムが前記基板上に無電解で堆積する段階と、
から成ることを特徴とする方法。 - 前記溶液のpHを、約7.5と約9.7との間になるように調整する段階と、
前記溶液の温度を、摂氏約60と約90度との間になるように調整する段階と、
をさらに含むことを特徴とする請求項27記載の方法。 - 前記溶液のpHを調整する段階は、前記溶液を前記基板に加える前に、前記溶液の重量の約5パーセントと約15パーセントとの間の濃度でアルカリ剤を加える段階を含むことを特徴とする請求項28記載の方法。
- ボードと、
前記ボード上に搭載された記憶装置と、
前記ボード上に搭載され、かつ前記記憶装置に結合された処理装置と、
から構成され、
前記処理装置は、コバルト、ボロン、ならびに、タングステンおよびリンの少なくとも1つを含むフィルムで被覆された基板を含み、
前記フィルムは、
少なくとも約100μOhm−cmの抵抗率、
少なくとも約1.0テスラの飽和磁束密度、
約5エルステッドより小さい飽和保磁力、および、
少なくとも約700の比透磁率、
を有することを特徴とするシステム。 - 前記フィルムは、約0.4マイクロメータの厚さを有し、
前記抵抗率は、約140μOhm−cmであり、
前記飽和磁束密度は、約1.5テスラであり、
前記飽和保磁力は、約0.1エルステッドであり、
前記比透磁率は、約700と約800の間である、
ことを特徴とする請求項30記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/478,173 US20080003698A1 (en) | 2006-06-28 | 2006-06-28 | Film having soft magnetic properties |
PCT/US2007/072170 WO2008002949A1 (en) | 2006-06-28 | 2007-06-26 | Film having soft magnetic properties |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009538003A true JP2009538003A (ja) | 2009-10-29 |
Family
ID=38845980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009512337A Pending JP2009538003A (ja) | 2006-06-28 | 2007-06-26 | 軟磁性を有するフィルム |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080003698A1 (ja) |
JP (1) | JP2009538003A (ja) |
KR (1) | KR20090030273A (ja) |
CN (1) | CN101479792B (ja) |
DE (1) | DE112007001206T5 (ja) |
TW (1) | TW200818145A (ja) |
WO (1) | WO2008002949A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8029922B2 (en) * | 2007-12-31 | 2011-10-04 | Intel Corporation | Forming electroplated inductor structures for integrated circuits |
US9865673B2 (en) | 2015-03-24 | 2018-01-09 | International Business Machines Corporation | High resistivity soft magnetic material for miniaturized power converter |
US9735224B1 (en) | 2016-10-11 | 2017-08-15 | International Business Machines Corporation | Patterning magnetic films using self-stop electro-etching |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332558A (ja) * | 2000-04-14 | 2001-11-30 | Internatl Business Mach Corp <Ibm> | 半導体フィーチャを形成する方法 |
JP2006120664A (ja) * | 2004-10-19 | 2006-05-11 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2007519829A (ja) * | 2004-01-26 | 2007-07-19 | アプライド マテリアルズ インコーポレイテッド | 単一チャンバ内で無電解堆積中に薄膜組成を選択的に変える方法及び装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4529668A (en) * | 1984-05-22 | 1985-07-16 | Dresser Industries, Inc. | Electrodeposition of amorphous alloys and products so produced |
KR870011582A (ko) * | 1986-05-27 | 1987-12-24 | 시노하라 아끼라 | 자기 기록 매체 |
US5015307A (en) * | 1987-10-08 | 1991-05-14 | Kawasaki Steel Corporation | Corrosion resistant rare earth metal magnet |
US4888758A (en) * | 1987-11-23 | 1989-12-19 | Scruggs David M | Data storage using amorphous metallic storage medium |
JP2817501B2 (ja) * | 1991-09-18 | 1998-10-30 | 株式会社日立製作所 | 磁気ディスク装置及びそれに用いる磁気ヘッド |
US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
US6605874B2 (en) * | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
US6645567B2 (en) * | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
US6715663B2 (en) * | 2002-01-16 | 2004-04-06 | Intel Corporation | Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method |
US6843852B2 (en) * | 2002-01-16 | 2005-01-18 | Intel Corporation | Apparatus and method for electroless spray deposition |
US20060263645A1 (en) * | 2003-04-21 | 2006-11-23 | Masahiro Ohmori | Substrate for perpendicular magnetic recording medium and method for production thereof |
US7064065B2 (en) * | 2003-10-15 | 2006-06-20 | Applied Materials, Inc. | Silver under-layers for electroless cobalt alloys |
-
2006
- 2006-06-28 US US11/478,173 patent/US20080003698A1/en not_active Abandoned
-
2007
- 2007-06-26 KR KR1020087031234A patent/KR20090030273A/ko not_active Application Discontinuation
- 2007-06-26 WO PCT/US2007/072170 patent/WO2008002949A1/en active Application Filing
- 2007-06-26 DE DE112007001206T patent/DE112007001206T5/de not_active Ceased
- 2007-06-26 JP JP2009512337A patent/JP2009538003A/ja active Pending
- 2007-06-26 CN CN200780024022XA patent/CN101479792B/zh not_active Expired - Fee Related
- 2007-06-27 TW TW096123338A patent/TW200818145A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332558A (ja) * | 2000-04-14 | 2001-11-30 | Internatl Business Mach Corp <Ibm> | 半導体フィーチャを形成する方法 |
JP2007519829A (ja) * | 2004-01-26 | 2007-07-19 | アプライド マテリアルズ インコーポレイテッド | 単一チャンバ内で無電解堆積中に薄膜組成を選択的に変える方法及び装置 |
JP2006120664A (ja) * | 2004-10-19 | 2006-05-11 | Nec Electronics Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2008002949A1 (en) | 2008-01-03 |
CN101479792A (zh) | 2009-07-08 |
TW200818145A (en) | 2008-04-16 |
CN101479792B (zh) | 2013-03-06 |
KR20090030273A (ko) | 2009-03-24 |
DE112007001206T5 (de) | 2009-04-30 |
US20080003698A1 (en) | 2008-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6197364B1 (en) | Production of electroless Co(P) with designed coercivity | |
Shacham-Diamand et al. | 30 years of electroless plating for semiconductor and polymer micro-systems | |
CN106024266B (zh) | 片上磁性结构及其形成方法 | |
US10002919B2 (en) | High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors | |
US3370979A (en) | Magnetic films | |
JP2009538003A (ja) | 軟磁性を有するフィルム | |
JP3102505B2 (ja) | 軟磁性多層めっき膜の製造方法および軟磁性多層めっき膜ならびに磁気ヘッド | |
US3379539A (en) | Chemical plating | |
EP3409815B1 (en) | Electroless nickel alloy plating baths, a method for deposition of nickel alloys, nickel alloy deposits and uses of such formed nickel alloy deposits | |
US20080237051A1 (en) | Method and plating bath for depositing a magnetic film | |
US3702263A (en) | Process for electrolessly plating magnetic thin films | |
Kim et al. | Enhanced magnetic properties of FeCo alloys by two-step electroless plating | |
JP2005293778A (ja) | 金属メッキ層付き単結晶Si基板と垂直磁気記録媒体 | |
JP3826323B2 (ja) | めっき磁性薄膜の製造方法 | |
Franz et al. | Electrodeposition of micromagnets of CoPtW (P) alloys | |
JP2007220777A (ja) | 軟磁性薄膜およびその製造方法並びに磁気ヘッド | |
Dadvand et al. | Preparation and characterization of Co–Fe–B thin films produced by electroless deposition | |
Zong et al. | Ultrasoft and High Magnetic Moment CoFe Films Directly Electrodeposited from a B‐Reducer Contained Solution | |
JP4645784B2 (ja) | 軟磁性薄膜およびその製造方法、並びにその薄膜を用いた薄膜磁気ヘッド | |
JP4041948B2 (ja) | 軟磁性薄膜及びその製造方法並びにその薄膜を用いた薄膜磁気ヘッド | |
Selvakumari | Magnetic and Electroanalytical Properties of Electrodeposited FePtP Films | |
Zana | Magnetic and structural characterization of high anisotropy cobalt-rich alloys: Thin films and patterns | |
JP2007158091A (ja) | 軟磁性薄膜の製造方法 | |
JPH02227826A (ja) | 磁気記録体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100924 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110530 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111024 |