CN105321970A - 制造固态图像传感器的方法和固态图像传感器 - Google Patents

制造固态图像传感器的方法和固态图像传感器 Download PDF

Info

Publication number
CN105321970A
CN105321970A CN201510320636.9A CN201510320636A CN105321970A CN 105321970 A CN105321970 A CN 105321970A CN 201510320636 A CN201510320636 A CN 201510320636A CN 105321970 A CN105321970 A CN 105321970A
Authority
CN
China
Prior art keywords
dielectric film
mos transistor
pixel region
region
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510320636.9A
Other languages
English (en)
Chinese (zh)
Inventor
大贯裕介
板桥政次
杮沼伸明
下津佐峰生
藤田雅人
荻野拓海
鸟居庆大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN105321970A publication Critical patent/CN105321970A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CN201510320636.9A 2014-06-13 2015-06-12 制造固态图像传感器的方法和固态图像传感器 Pending CN105321970A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-122747 2014-06-13
JP2014122747A JP6362093B2 (ja) 2014-06-13 2014-06-13 固体撮像装置の製造方法及び固体撮像装置

Publications (1)

Publication Number Publication Date
CN105321970A true CN105321970A (zh) 2016-02-10

Family

ID=54836838

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510320636.9A Pending CN105321970A (zh) 2014-06-13 2015-06-12 制造固态图像传感器的方法和固态图像传感器

Country Status (3)

Country Link
US (1) US10026774B2 (https=)
JP (1) JP6362093B2 (https=)
CN (1) CN105321970A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9935140B2 (en) 2015-05-19 2018-04-03 Canon Kabushiki Kaisha Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
KR102432776B1 (ko) * 2015-10-08 2022-08-17 에스케이하이닉스 주식회사 반도체 장치의 제조방법
JP2018006443A (ja) * 2016-06-29 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2019004029A (ja) * 2017-06-14 2019-01-10 キヤノン株式会社 半導体装置の製造方法
CN108063146A (zh) * 2017-12-15 2018-05-22 上海华力微电子有限公司 Cmos图像传感器的制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04188832A (ja) * 1990-11-22 1992-07-07 Mitsubishi Electric Corp 半導体装置の製造方法
US20070063317A1 (en) * 2005-06-24 2007-03-22 Samsung Electronics Co., Ltd. Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device
CN101752396A (zh) * 2008-12-10 2010-06-23 索尼株式会社 固态成像器件及其制造方法、电子设备、以及半导体器件
CN102254921A (zh) * 2010-05-18 2011-11-23 佳能株式会社 光电转换装置和照相机
CN102637708A (zh) * 2011-02-09 2012-08-15 佳能株式会社 固态图像拾取装置、其制造方法和图像拾取系统
US20130277756A1 (en) * 2012-04-18 2013-10-24 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017557A (ja) * 2001-07-04 2003-01-17 Denso Corp 半導体装置及びその製造方法
JP5110820B2 (ja) 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム
JP2008098373A (ja) * 2006-10-11 2008-04-24 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP2010161236A (ja) * 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP5428395B2 (ja) * 2009-03-04 2014-02-26 ソニー株式会社 固体撮像装置およびその製造方法、および撮像装置
JP5704848B2 (ja) * 2010-06-30 2015-04-22 キヤノン株式会社 固体撮像装置およびカメラ
JP2012094718A (ja) 2010-10-27 2012-05-17 Fujitsu Semiconductor Ltd 半導体装置
JP5933953B2 (ja) * 2011-10-06 2016-06-15 キヤノン株式会社 半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04188832A (ja) * 1990-11-22 1992-07-07 Mitsubishi Electric Corp 半導体装置の製造方法
US20070063317A1 (en) * 2005-06-24 2007-03-22 Samsung Electronics Co., Ltd. Overlay key, method of forming the overlay key, semiconductor device including the overlay key and method of manufacturing the semiconductor device
CN101752396A (zh) * 2008-12-10 2010-06-23 索尼株式会社 固态成像器件及其制造方法、电子设备、以及半导体器件
CN102254921A (zh) * 2010-05-18 2011-11-23 佳能株式会社 光电转换装置和照相机
US20110285892A1 (en) * 2010-05-18 2011-11-24 Canon Kabushiki Kaisha Photoelectric conversion device and camera
CN102637708A (zh) * 2011-02-09 2012-08-15 佳能株式会社 固态图像拾取装置、其制造方法和图像拾取系统
US20130277756A1 (en) * 2012-04-18 2013-10-24 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JP6362093B2 (ja) 2018-07-25
US20150364517A1 (en) 2015-12-17
US10026774B2 (en) 2018-07-17
JP2016004838A (ja) 2016-01-12

Similar Documents

Publication Publication Date Title
US11056530B2 (en) Semiconductor structure with metal connection layer
US9397136B2 (en) Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
US9202842B2 (en) Method for manufacturing photoelectric conversion device
JP2010056516A (ja) 固体撮像装置、その製造方法および撮像装置
US20080258188A1 (en) Metal oxide semiconductor device and method of fabricating the same
JP6305030B2 (ja) 光電変換装置の製造方法
US10026774B2 (en) Method of manufacturing solid-state image sensor and solid-state image sensor
CN104795415A (zh) 半导体器件及其制造方法
JP2018041836A (ja) 固体撮像装置およびその製造方法ならびにカメラ
JP6681150B2 (ja) 固体撮像装置およびその製造方法ならびにカメラ
JP2002190586A (ja) 固体撮像装置およびその製造方法
US20160126284A1 (en) Solid-state imaging device and method of manufacturing solid-state imaging device
TWI867953B (zh) 背側照明影像感測器
JP2019067826A (ja) 撮像装置およびその製造方法ならびに機器
US8748955B2 (en) CMOS image sensor and method for fabricating the same
JP2010045292A (ja) 光電変換装置及びその製造方法
US10263029B2 (en) Photoelectric conversion device and manufacturing method of the photoelectric conversion device
US10163953B2 (en) Image pickup device and method of manufacturing the same
JP2006024934A (ja) Ｃｍｏｓイメージセンサーの製造方法
US20120052615A1 (en) Method and structure for reducing dark current in a cmos image sensor
US20180158851A1 (en) Pixel with spacer layer covering photodiode
TWI581409B (zh) 固態成像裝置，製造固態成像裝置之方法，及成像裝置
JP2019046924A (ja) 光電変換装置の製造方法
KR100788368B1 (ko) 반도체 소자의 제조 방법
JP2014197566A (ja) 固体撮像装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160210

RJ01 Rejection of invention patent application after publication