CN105304241B - Thick film high power low resistance patch resistor and its manufacture method - Google Patents
Thick film high power low resistance patch resistor and its manufacture method Download PDFInfo
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- CN105304241B CN105304241B CN201410280971.6A CN201410280971A CN105304241B CN 105304241 B CN105304241 B CN 105304241B CN 201410280971 A CN201410280971 A CN 201410280971A CN 105304241 B CN105304241 B CN 105304241B
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Abstract
The invention discloses a kind of thick film high power low resistance patch resistor and preparation method thereof, using high silver content and necessarily the electrode slurry of the amount containing palladium makes one layer of backplate on insulated substrate, first and second two layers of front electrode is continuously made again, then resistive layer is made on the second front electrode, the front electrode is made up of three relatively independent blocks, resistance cutting is two series connection and is distributed the resistance close proximity to folding bar line both ends by the front electrode, and the resistive layer close to folding bar line both ends can be mapped onto on the back electrode of resistance completely, resistance is set to obtain most short heat dissipation path.The another multitool using mean allocation tangential length repeats to cut knife cutting mode, resistance is set to reach minimum cutting damage, the product that such design and technique are made has high stability, high power, low TCR indexs and characteristic of low cost, has very strong market application and product promotion value.
Description
Technical field
It is low more particularly, to a kind of thick film high power the present invention relates to a kind of thick film high power resistor and its manufacture method
Resistance patch resistor and its manufacture method.
Background technology
With the development of science and technology the continuous lifting that the development in epoch and people are required miniaturization of electronic products, performance can
Lean on and the thick film Chip-R of process stabilizing also answers the property requirements of electronic product that diversified development trend, many institute's weeks are presented
Know, various electronic products can all make a power supply in order to ensure stabilizing it work, to ensure that its is normal and stabilization
Work, and the steady operation of every kind of power supply all be unable to do without a kind of low resistance electricity for being connected to and playing current detecting on feedback circuit
Resistance, this resistance is exactly the current sense resistor that people often say, with the aggravation of miniaturization of electronic products, high power low resistance
Current sense resistor is increasingly pursued by market.At present, existing common low resistance Chip-R generally include insulated substrate,
Back electrode, it is secondary or three times front electrode, resistive layer, the first protective layer, the second protective layer, character code, side electrode, nickel coating and
Tin coating, as shown in figure 18, why power is not high for this product, is primarily due to also exist in product design and manufacturing process
The shortcomings that following：
First, resistive layer is close to the core of insulated substrate, and, the heat of resistance is often assembled apart from side electrode farther out
In the centre of resistive layer, the heat of resistance exists scattered during electrode from the middle to both ends and side electrode are distributed
Hot path is long and the problem of making radiating bad.
Second, common low resistance resistance is cut or used using hilted broadsword when carrying out radium-shine resistance amendment, either
Knife is cut, its damage of radium-shine resistance trimming to resistive layer is all larger, and reduces the resistance to power capability of resistance.
3rd, common low resistance resistance using the length for reducing resistive layer, come by the mode for lengthening two end electrodes length
Make, so, because two end electrodes length increases and caused by two end electrodes (silver) internal resistance increasing, and make the temperature coefficient mistake of resistance
Greatly.
Another more general solution is to use alloy in the current industry of high power low resistance current sense resistor
Alloy Foil is attached on porcelain substrate by paper tinsel by colloid, and is processed by the manufacture craft of printed substrate, this making work
The problem of resistance of skill is primarily present material cost height, complex manufacturing technology, and production cost is high and the delivery cycle is long, therefore this
Also stable performance is given, the thick film high power low resistance Chip-R of process brings very big market potential.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention proposes a kind of thick film high power low resistance patch resistor and its manufacture
Method, improvement is optimized by the structure to normal thick membrance current detection resistance and production technology, and material is carried out rationally
Selection, can make the power of product get a promotion, while can also improve TCR (temperature coefficient) index of current sense resistor.Compared with
Low cost of manufacture and excellent resistance characteristic index can be brought more to this thick film high power current detecting patch resistor
And wider application.
The technical proposal of the invention is realized in this way：
A kind of thick film high power low resistance patch resistor, including a square insulating substrate, along the length of the insulated substrate
Direction is spent, respectively covered with one layer of backplate at the both ends of the insulated substrate lower surface, between two backplates
At a distance of setpoint distance, the first gap is formed；Respectively covered with one layer at the both ends of the insulated substrate upper surface and at center
One front electrode, two first front electrodes at both ends are respectively with first front electrode at center at a distance of setting
Distance, form two the second gaps；Three the first front electrode upper surfaces have been covered each by one layer of second front electrode, and two
One layer of resistive layer is covered each by insulated substrate in individual second gap, two resistive layers are extended towards and covered
Second front electrode at center, two resistive layers extend over second front electrode at both ends backwards
A part；The resistive layer upper surface is successively covered with one layer of first protective layer and one layer of second protective layer；Described first protects
Sheath covers all the resistive layer, and second protective layer covers all first protective layer, and described second protects
A part for second front electrode that sheath extends and covered at both ends；
Side electrode, nickel coating and tin coating are additionally provided with, the side electrode covers all the insulated substrate both ends
End face, the end face of first front electrode at both ends, second front electrode at both ends end face and both ends at
The backplate end face；The nickel coating covers all second front electrode, the side electrode and described
Backplate, and the nickel coating is overlapped on the end face of second protective layer；The tin coating covers the nickel coating,
And the tin coating is overlapped on the end face of second protective layer.
As a further improvement on the present invention, along the length direction of the insulated substrate, two described first at both ends
The length of front electrode is less than the length of first front electrode at center.
As a further improvement on the present invention, corresponding first front electrode of second front electrode is complete
It is overlapping.
As a further improvement on the present invention, along the thickness direction of the insulated substrate, two the second gap difference
It is mapped onto to wearing corresponding to the insulated substrate lower surface in the backplate downwards.
Between two second front electrodes and the nickel coating as a further improvement on the present invention, at both ends,
One layer of the 3rd front electrode is respectively equipped between first protective layer at the resistive layer and center at center, at both ends
Two the 3rd front electrodes and center at the 3rd front electrode between at a distance of setpoint distance, form two the 3rd
Gap, and the part of the 3rd front electrode that second protective layer extends and covered at both ends；Described second protects
Sheath is outer to cover all second protective layer, and the described 3rd covered with one layer of the 3rd protective layer, the 3rd protective layer
A part for the 3rd front electrode that protective layer extends and covered at both ends；The nickel coating and tin coating difference
It is overlapped on the end face of the 3rd protective layer.
As a further improvement on the present invention, along the length direction of the insulated substrate, two the described 3rd at both ends
The length of front electrode is less than the length of the 3rd front electrode at center, and two second gaps are right upwards respectively
Title is mapped onto on corresponding two third spaces.
As a further improvement on the present invention, two resistive layers at both ends are to be adjusted by laser to setting
The resistive layer of resistance, the 3rd protective layer outer portion is covered with one layer of character code label layer.
A kind of manufacture method of thick film high power low resistance patch resistor, comprises the following steps：
A, a sheet of insulated substrate is prepared, some are formed uniformly along width in the upper and lower surface of the insulated substrate
The folding bar line and some folding grain lines along its length in direction are spent, the folding bar line and the folding grain line intersect to form grid
Shape；
B, using every folding bar line as symmetry axis, one layer of electrode is symmetrically printed at the folding bar line of the insulated substrate lower surface
Material, then it is dried, forms backplate；Wherein, using each grid as unit, two backplates at both ends
Between at a distance of setpoint distance, form the first gap；
C, using every folding bar line as symmetry axis, first layer electricity is symmetrically printed at the folding bar line of the insulated substrate upper surface
Pole material, and first layer electrode material is printed at the center of each grid, then it is dried, forms the first front electrode；
Wherein, using each grid as unit, two first front electrodes at both ends are positive with described first at center respectively
At a distance of setpoint distance between electrode, two the second gaps are formed, and this two second gaps are right downwards in vertical direction
Wear and be mapped onto corresponding to insulated substrate lower surface in backplate；Two first front electrodes at both ends are along its length
Length be respectively smaller than the length of the first front electrode along its length at center；
D, in the first front electrode surface printing second layer electrode material, then it is dried and sinters, forms the
Two front electrodes；Wherein, second front electrode and first front electrode are completely overlapped；
E, using each grid as unit, printed resistor material on the insulated substrate in two second gaps, two
The resistance material printed in second gap extends towards and covers all second front electrode at center, and two
The resistance material printed in individual second gap extends over a part for second front electrode at both ends backwards；
Then it is dried and sinters, forms resistive layer；
F, using each grid as unit, the surface of second front electrode at both ends and therebetween resistive layer
Center at surface on print third layer electrode material, be then dried and sinter, formed the 3rd front electrode (25)；Its
In, at a distance of setpoint distance, shape between the 3rd front electrode at two the 3rd front electrodes and center at both ends
Into two third spaces, two second gaps are symmetrically mapped onto on corresponding third space upwards in vertical direction；
G, using each grid as unit, the 3rd front electrode surface printing at the resistance layer surface and center
First layer insulating materials, and the first layer insulating materials printed extends over the 3rd front electrode at both ends to both ends
A part, be then dried and sinter, formed the first protective layer；
H, using each grid as unit, using radium-shine laser to knife cutting mode, through first protective layer, at two
Multitool is carried out on two resistive layers in second gap respectively and repeats radium-shine laser cutting, forms radium-shine tangent line, is adjusted
The resistance value of the whole resistive layer reaches required resistance；
I, using each grid as unit, second layer insulating materials is printed in first protective layer, is then done
It is dry, the second protective layer is formed, wherein, second protective layer covers all first protective layer, and second protection
The part of second front electrode that layer extends and covered at both ends along its length, second protective layer is along width
Direction is extended at folding grain line；
J, using each grid as unit, third layer insulating materials is printed in second protective layer, after being dried,
Again in one layer of marking materials of surface printing of third layer insulating materials, after being dried, then it is sintered；Third layer insulating materials
The 3rd protective layer is formed, marking materials forms character code label layer, and the 3rd protective layer and the second protective layer are completely overlapped；
K, the insulated substrate after step a~j is sequentially converted into strip half along every folding bar line of the insulated substrate
Finished product；
L, the side formed using vacuum sputtering machines to the strip semi-finished product folding bar is sputtered, and forms side electrode,
The side electrode extends over residence and states the end face of the first front electrode, the end face of second front electrode, the described 3rd
The end face of front electrode and the end face of the backplate；
M, the strip semi-finished product after step a~l are sequentially converted into along every folding grain line on the strip semi-finished product
Granular semi-finished product；
N, electroplated on the 3rd front electrode, side electrode and backplate of the granular semi-finished product using barrel plating mode
Layer of metal nickel, forms nickel coating, and the nickel coating covers all the 3rd front electrode, the side electrode and described
Backplate, and the nickel coating is overlapped on two end faces of the 3rd protective layer；
O, layer of metal tin is electroplated using barrel plating mode on the surface of the nickel coating, forms one layer of tin coating, the plating
Tin layers cover all the nickel coating, and the tin coating is overlapped on two end faces of the 3rd protective layer.
As a further improvement on the present invention, print electrode in step b and print electrode in the mode of printing of material, step c
Print electrode the mode of printing of printed resistor material, step in the mode of printing of material, step e in the mode of printing of material, step d
Printed electrode in rapid f and print insulating materials in the mode of printing that insulating materials is printed in the mode of printing of material, step g, step i
Mode of printing, insulating materials is printed in step j mode of printing, the mode of printing of printing mark material is silk in step j
Wire mark brush.
As a further improvement on the present invention, the electrode material printed in step b is silver-colored palladium slurry, is printed in step c
Electrode material is silver-colored palladium slurry, and the electrode material printed in step d is silver-colored palladium slurry, and the electrode material printed in step f is silver
Palladium slurry, the insulating materials printed in step g are glass paste, and the insulating materials printed in step i is resin slurry, step j
The insulating materials of middle printing is resin slurry.
The beneficial effects of the invention are as follows：The invention provides a kind of thick film high power low resistance patch resistor and its manufacture
Method, compared with thick film common power low resistance patch resistor in the prior art, thick film high power low resistance paster of the present invention
Resistance can reach following beneficial effect：
1st, by forming two layers of front electrode, i.e. the first front electrode and the second front electrode in insulated substrate upper surface,
Every layer of front electrode is formed by three independent blocks at insulated substrate both ends and at center, and at both ends
First, the second gap is formed between first, second front electrode at the second front electrode and center, is formed in two the second gaps
Resistive layer, preferably, the length of the front electrode at both ends is less than the length of the front electrode at center, advantage of this is that
Front electrode at both ends is set to try one's best short, the length that the front electrode of middle is tried one's best, so that the electricity in the second gap
The both ends for the close insulated substrate that resistance layer is tried one's best, therefore, it is possible to by the heat generating spot of the resistive layer of patch resistor from insulated substrate
Centre move on to the both ends of insulated substrate, solve the problems, such as to make patch resistor radiating bad because heat dissipation path is long, with
Reach the purpose of lifting patch resistor power.
2nd, by forming resistive layer in relative two the second gaps for pulling open setpoint distance, during resistive layer is completely covered
On the second front electrode at the heart and jump on the second front electrode at both ends, with common low resistance patch resistor phase
Than resistive layer is greatly increased, and front electrode is greatly reduced, therefore, it is possible to reduce front electrode internal resistance to patch
The influence of sheet resistance device temperature coefficient (TCR) index, significantly improve and improve the index temperature coefficient of resistance.
3rd, the front electrode of patch resistor includes first, second, third front electrode at both ends, and they are by three layers of print
Brush electrode material is laminated to be formed, and the front electrode that this layering is set can greatly reduce the impedance of front electrode, so as to reach
To the heat-sinking capability of lifting patch resistor, improve and improve the index temperature coefficient purpose of patch resistor.
4th, first, second front electrode at center is formed at the lower section of resistive layer, the 3rd front electrode shape at center
Into in the top of resistive layer, three layers of front electrode of three independent blocks compositions (the first front electrode, the second front electrode and the
Three front electrodes) by resistive layer cutting be two series connection and distribution close proximity to both ends resistance, enter to patch resistor
During the radium-shine resistance trimming of row, the resistance of this two series connection can be carried out to cutting with the mode that multitool repeats respectively, in such manner, it is possible to
Damage of the relative reduction to resistive layer, lift the resistance to power characteristic of resistive layer.
5th, can by the way that the resistive layer in the second gap is mapped on insulated substrate lower surface in corresponding backplate
Reach and significantly improve heat dissipation path and radiating condition, it is ensured that the purpose of the further lifting of patch resistor power, its principle
It is, if resistive layer will be mapped in backplate it is necessary to accordingly lengthen the length of backplate in the longitudinal direction, so,
The heat of resistive layer can be dispersed on pcb board rapidly by the backplate of lengthening.
6th, three layers of front electrode (the first front electrode, the second front electrode and the 3rd front electrode) material and backplate
Material from the silver-colored palladium slurry with certain amount containing palladium and high silver content, in this way it can be ensured that patch resistor high temperature,
The reliability and stability to be worked under high humidity environment.
Brief description of the drawings
Fig. 1 is the insulated substrate schematic diagram after step a of the present invention；
Fig. 2 is the insulated substrate lower surface schematic diagram after step b of the present invention；
Fig. 3 is the insulated substrate upper surface schematic diagram after step c of the present invention；
Fig. 4 is the insulated substrate upper surface schematic diagram after step d of the present invention；
Fig. 5 is the insulated substrate schematic diagram after step e of the present invention；
Fig. 6 is the insulated substrate schematic diagram after step f of the present invention；
Fig. 7 is the insulated substrate schematic diagram after step g of the present invention；
Fig. 8 is the insulated substrate schematic diagram after step h of the present invention；
Fig. 9 is the insulated substrate schematic diagram after step i of the present invention；
Figure 10 is the insulated substrate schematic diagram after step j of the present invention；
Figure 11 is the insulated substrate schematic diagram after step k of the present invention；
Figure 12 is the insulated substrate schematic diagram after step l of the present invention；
Figure 13 is the granular semi-finished product schematic diagram after step m of the present invention；
Figure 14 is the granular semi-finished product schematic diagram after step n of the present invention；
Figure 15 is the granular semi-finished product schematic diagram after step o of the present invention；
Figure 16 is the cross-sectional view of the embodiment of the present invention 1；
Figure 17 is the cross-sectional view of the embodiment of the present invention 2；
Figure 18 is the common low resistance patch resistor cross-section structure signal of prior art.
With reference to accompanying drawing, make the following instructions：
10-insulated substrate 11-folding grain line
12-folding bar line, 21-upper surface
22-the first the 23-the second front electrode of front electrode
The front electrode of 24-resistive layer 25-the three
26-the first protective layer 27-radium-shine tangent line
28-the second the 29-the three protective layer of protective layer
30-label layer, 31-lower surface
32-backplate, 33-side electrode
40-nickel coating, 50-tin coating
Embodiment
Embodiment 1
As shown in figure 16, a kind of thick film high power low resistance patch resistor, including a square insulating substrate 10, along described
The length direction of insulated substrate, respectively covered with one layer of backplate 32 at the both ends of the insulated substrate lower surface 31, two
At a distance of setpoint distance between the backplate, the first gap is formed；At the both ends of the insulated substrate upper surface 21 and center
Place respectively covered with one layer of first front electrode 22, two first front electrodes at both ends respectively with center described in
First front electrode forms two the second gaps at a distance of setpoint distance；One has been covered each by outside three first front electrodes
The second front electrode 23 of layer, one layer of resistive layer 24, two institutes have been covered each by the insulated substrate in two second gaps
State resistive layer and extend towards second front electrode at the center of covering, two resistive layers extend over two backwards
A part for second front electrode at end；Successively covered with one layer of first protective layer 26 and one layer the outside the resistive layer
Two protective layers 28；First protective layer covers all the resistive layer, and second protective layer covers all described
One protective layer, and the part of second front electrode that second protective layer extends and covered at both ends；
Side electrode 33, nickel coating 40 and tin coating 50 are additionally provided with, the side electrode covers all the insulation base
The end face of second front electrode at the end face of first front electrode at the end face at plate both ends, both ends, both ends and
The end face of the backplate at both ends；The nickel coating covers all second front electrode, the side electrode
With the backplate, and the nickel coating is overlapped on the end face of second protective layer；The tin coating covers described
Nickel coating, and the tin coating is overlapped on the end face of second protective layer.With thick film common power low-resistance in the prior art
Value patch resistor is compared, in said structure of the present invention by insulated substrate upper surface formed two layers of front electrode, i.e., first
Front electrode and the second front electrode, every layer of front electrode are by three at insulated substrate both ends and at center independent
Block is formed, and is formed between first, second front electrode at first, second front electrode and center at both ends between second
Gap, resistive layer is formed in two the second gaps, in such manner, it is possible to by the heat generating spot of the resistive layer of patch resistor from insulated substrate
Centre moves on to the both ends of insulated substrate, solve the problems, such as due to heat dissipation path is long and make patch resistor radiating it is bad, with up to
To the purpose of lifting patch resistor power.In addition, by forming electricity in relative two the second gaps for pulling open setpoint distance
Resistance layer, resistive layer are completely covered on the second front electrode at center and jumped on the second front electrode at both ends, with
Common low resistance patch resistor is compared, and resistive layer is greatly increased, and front electrode is greatly reduced, accordingly, it is capable to
Influence of the front electrode internal resistance to patch resistor temperature coefficient (TCR) index is enough reduced, significantly improves and improve resistance
Index temperature coefficient.
Preferably, along the length direction of the insulated substrate, the length of two first front electrodes at both ends is small
The length of first front electrode at center advantage of this is that the front electrode at both ends is tried one's best short, in
Between the length tried one's best of the front electrode located so that the both ends for the close insulated substrate that the resistive layer in the second gap is tried one's best,
Further shorten heat dissipation path, improve the heat-sinking capability of patch resistor.
Preferably, corresponding first front electrode of second front electrode is completely overlapped.This layering is set
The front electrode put can greatly reduce the impedance of front electrode, so as to reach the heat-sinking capability of lifting patch resistor, change
Index temperature coefficient purpose that is kind and improving patch resistor.
Preferably, it is mapped onto institute to wearing separately down along the thickness direction of the insulated substrate, two second gaps
State corresponding to insulated substrate lower surface in the backplate.Heat dissipation path and heat sink strip are significantly improved in such manner, it is possible to reach
Part, it is ensured that the purpose of the further lifting of patch resistor power, its principle are, if resistive layer will be mapped to backplate
On it is necessary to accordingly lengthen the length of backplate in the longitudinal direction, so, can be rapidly by electricity by the backplate of lengthening
The heat of resistance layer is dispersed on pcb board.
Embodiment 2
As shown in figure 17, the present embodiment 2 includes all technical characteristic in embodiment 1, and its difference is：Two at both ends
The resistive layer between individual second front electrode and the nickel coating, at center and first protective layer at center
Between be respectively equipped with one layer of the 3rd front electrode 25, two the 3rd front electrodes at both ends and the described 3rd at center
At a distance of setpoint distance between front electrode, two third spaces are formed, and second protective layer extends and covered at both ends
The 3rd front electrode a part；Second protective layer is outer to be protected covered with one layer of the 3rd protective layer 29, the described 3rd
Sheath covers all second protective layer, and the 3rd front that the 3rd protective layer extends and covered at both ends
A part for electrode；The nickel coating and the tin coating are overlapped on the end face of the 3rd protective layer respectively.Said structure
In, the front electrode of patch resistor includes first, second, third front electrode at both ends, and they are printed electrode by three layers
Material is laminated to be formed, and the front electrode that this layering is set can greatly reduce the impedance of front electrode, so as to reach lifting
The heat-sinking capability of patch resistor, improve and improve the index temperature coefficient purpose of patch resistor.In said structure, center
First, second front electrode at place is formed at the lower section of resistive layer, and the 3rd front electrode at center is formed at the upper of resistive layer
Side, three layers of front electrode (the first front electrode, the second front electrode and the 3rd front electrode) of three independent blocks compositions will
Resistive layer cutting is resistance of two connect and distributions close proximity to both ends, when carrying out radium-shine resistance trimming to patch resistor,
The resistance of this two series connection can be carried out to cutting with the mode that multitool repeats respectively, in such manner, it is possible to which relative reduction is to electricity
The damage of resistance layer, lift the resistance to power characteristic of resistive layer.
Preferably, along the length direction of the insulated substrate, the length of two the 3rd front electrodes at both ends is small
The length of the 3rd front electrode at center, and two second gaps are symmetrically mapped onto corresponding two upwards respectively
On the individual third space.So, the 3rd front electrode at both ends and at center is respectively than first, second front electrode
Length wants shorter, it is possible to reduce printing position deviation brings the bad influence of quality.
Preferably, two resistive layers at both ends are to be adjusted by laser to the resistive layer of setting resistance, institute
The second protective layer outer portion is stated covered with one layer of character code label layer 30.In said structure, first, second front electrode at center
It is formed at the lower section of resistive layer, the 3rd front electrode at center is formed at the top of resistive layer, three independent blocks compositions
Resistive layer cutting is two series connection by three layers of front electrode (the first front electrode, the second front electrode and the 3rd front electrode)
And the resistance close proximity to both ends is distributed, can be respectively with the side of multitool repetition when carrying out radium-shine resistance trimming to patch resistor
Formula is carried out to cutting to the resistance of this two series connection, in such manner, it is possible to which damage of the relative reduction to resistive layer, lifts resistive layer
Resistance to power characteristic.
As a kind of preferred embodiment, a kind of manufacture method of thick film high power low resistance patch resistor of the present invention, bag
Include following steps：
A, it is equal in the upper surface 21 of the insulated substrate and lower surface 31 as shown in figure 1, preparing a sheet of insulated substrate 10
Some folding bar lines 12 and some folding grain lines 11 along its length in the width direction of even formation, the folding bar line and described
Folding grain line intersects to form clathrate, the corresponding thick film high power low resistance patch resistor finally manufactured of each grid.
B, as shown in Fig. 2 using every folding bar line as symmetry axis, at the folding bar line of the insulated substrate lower surface, pass through
The mode of silk-screen printing symmetrically prints one layer of silver-colored palladium slurry, is then dried, and forms backplate 32；Wherein, with each lattice
Son is unit, at a distance of setpoint distance between two backplates at both ends, forms the first gap；So, the back of the body of printing
Face electrode is located at the folding bar line of width, and is in symmetry shape.
C, as shown in figure 3, using every folding bar line as symmetry axis, at the folding bar line of the insulated substrate upper surface, pass through
The mode of silk-screen printing symmetrically prints first layer silver palladium slurry, and first layer silver palladium slurry is printed at the center of each grid,
Then it is dried, forms the first front electrode 22；Wherein, using each grid as unit, two described first at both ends are just
Face electrode forms two the second gaps respectively between first front electrode at center at a distance of setpoint distance, and this two
Individual second gap is mapped onto corresponding to insulated substrate lower surface in backplate downwards to wearing in vertical direction；At both ends
Two first front electrodes length along its length be respectively smaller than the first front electrode at center along its length
Length；In said structure, using each grid as unit, the first front electrode is made up of three independent blocks, both ends
First front electrode at two first front electrodes at place and center, and at the first front electrode at both ends and center
The first front electrode between the second gap close proximity to folding bar line.
D, as shown in figure 4, symmetrically printing second layer silver by way of silk-screen printing on the first front electrode surface
Palladium slurry, is then dried and sinters, and forms the second front electrode 23；Wherein, second front electrode and described first
Front electrode is completely overlapped；So, the second front electrode is also made up of three independent blocks, and the gap between three blocks
Also also it is mapped onto the backplate of insulated substrate lower surface to wearing downwards in vertical direction close proximity to folding bar line, the gap
On.
E, as shown in figure 5, using each grid as unit, silk screen is passed through on the insulated substrate in two second gaps
The mode printed resistor slurry of printing, during the resistance slurry printed in two second gaps is extended towards and covered all
Second front electrode at the heart, and the resistance slurry printed in two second gaps is extended at both ends backwards
Second front electrode a part；Then it is dried and sinters, forms resistive layer 24；So, resistive layer is positioned at the
Two inner spaces are divided to form the resistance of two series connection, and are symmetrically distributed between two adjacent folding bar lines.
F, as shown in fig. 6, using each grid as unit, the surface of second front electrode at both ends and positioned at it
Between resistive layer center at surface on a silver medal palladium slurry is printed by way of silk-screen printing, be then dried and burn
Knot, form the 3rd front electrode 25；Wherein, two the 3rd front electrodes at both ends and the 3rd front at center
At a distance of setpoint distance between electrode, two third spaces are formed, two second gaps symmetrical shadow upwards in vertical direction
Corresponding to being mapped on third space.So, the profile of the 3rd front electrode is similar to first and second front electrode, and by three
Independent blocks are formed, and the spacing simply formed between three independent blocks is larger than between first and second front electrode
Spacing, and can symmetrically be mapped onto on the gap between first and second front electrode.
G, as shown in fig. 7, using each grid as unit, the 3rd front electricity at the resistance layer surface and center
Pole surface printed glass slurry by way of silk-screen printing, and the first layer glass paste printed extends over two to both ends
A part for the 3rd front electrode at end, is then dried and sinters, and forms the first protective layer 26；So, first
Protective layer covers all resistive layer, plays a part of protective resistance layer.
H, as shown in figure 8, using each grid as unit, using radium-shine laser to knife cutting mode, protected through described first
Sheath, multitool is carried out on two resistive layers in two second gaps respectively and repeats radium-shine laser cutting, is formed
Radium-shine tangent line 27, the resistance value for adjusting the resistive layer reach required resistance；In this manner it is achieved that resistive layer resistance value
Accurate adjustment, meets being actually needed for resistor.
I, as shown in figure 9, using each grid as unit, printed in first protective layer by way of silk-screen printing
Brush first layer resin slurry, is then dried, and forms the second protective layer 28, wherein, second protective layer covers all
First protective layer, and second front electrode that second protective layer extends and covered at both ends along its length
A part, second protective layer extend in the width direction folding grain line at；So, the second protective layer covers all first
Protective layer, play a part of further protective resistance layer.
J, as shown in Figure 10, using each grid as unit, in second protective layer by way of silk-screen printing
Second layer resin slurry is printed, after being dried, then one layer of marking materials of surface printing in second layer resin slurry, done
After dry, then it is sintered；Second layer resin slurry forms the 3rd protective layer 29, and marking materials forms character code label layer 30, described
3rd protective layer and the second protective layer are completely overlapped；So, the 3rd protective layer covers all the second protective layer, plays further
The effect of protective resistance layer.Label layer plays a part of identifying product.
K, as shown in figure 11, along every folding bar line of the insulated substrate by the insulated substrate after step a~j sequentially
It is converted into strip semi-finished product；
L, as shown in figure 12, the side formed using vacuum sputtering machines to the strip semi-finished product folding bar is sputtered, shape
Into side electrode 33, the side electrode extends over residence and states the end face of the first front electrode, second front electrode
The end face of end face, the end face of the 3rd front electrode and the backplate；Side electrode play connection the first front electrode,
The effect of second front electrode, the 3rd front electrode and backplate.
M, as shown in figure 13, along every on strip semi-finished product folding grain line by the strip after step a~l half into
Product are sequentially converted into granular semi-finished product；
N, as shown in figure 14, used on the 3rd front electrode, side electrode and backplate of the granular semi-finished product
Barrel plating mode electroplates layer of metal nickel, forms nickel coating 40, and the nickel coating covers all the 3rd front electrode, described
Side electrode and the backplate, and the nickel coating is overlapped on two end faces of the 3rd protective layer；
O, as shown in figure 15, layer of metal tin is electroplated using barrel plating mode on the surface of the nickel coating, forms one layer of plating
Tin layers 50, the tin coating covers all the nickel coating, and the tin coating is overlapped on two of the 3rd protective layer
On end face, that is, form thick film high power low resistance patch resistor of the present invention.
To sum up, the thick film high power low resistance patch resistor made by the present invention is using high silver content and is necessarily contained
The electrode slurry of palladium amount makes one layer of backplate on an insulated substrate, then continuously makes two layers of front electrode (first, second
Front electrode), resistive layer then is made on the second front electrode, the front electrode (first, second front electrode) is by three
Relatively independent block is formed, and resistance cutting is two series connection and is distributed by the front electrode (first, second front electrode)
Close proximity to the resistance at folding bar line both ends, and the resistive layer close to folding bar line both ends can be mapped onto the backplate of resistance completely
On, to obtain most short heat dissipation path, while resistive layer is completely covered the front electrode at center and jumped at both ends just
On the electrode of face, then one the 3rd front electrode is made, and obtain high-power patch resistor.
Because the present invention is that the material from patch resistor, structure and production technology are optimized to improve and hoisting power and carried
Temperature coefficient (TCR) index is risen, rather than front electrode is replaced or coat using metal material.Therefore, the present invention can be significantly
The production cost of thick film high power low resistance patch resistor is reduced, can be widely applied in each electronic product.
Thick film high power low resistance patch resistor of the present invention can be widely used in power supply as current sense resistor
Making in.
Above example is referring to the drawings, to a preferred embodiment of the present invention will be described in detail.Those skilled in the art
Member by above-described embodiment carry out various forms on modification or change, but without departing substantially from the present invention essence in the case of, all
Fall within the scope and spirit of the invention.
Claims (10)
- A kind of 1. thick film high power low resistance patch resistor, it is characterised in that：Including a square insulating substrate (10), along described The length direction of insulated substrate, respectively covered with one layer of backplate (32) at the both ends of the insulated substrate lower surface (31), At a distance of setpoint distance between two backplates, the first gap is formed；At the both ends of the insulated substrate upper surface (21) With at center respectively covered with one layer of first front electrode (22), two first front electrodes at both ends respectively with center First front electrode at place forms two the second gaps at a distance of setpoint distance；Three the first front electrode upper surfaces It has been covered each by one layer of second front electrode (23), one layer of electricity has been covered each by the insulated substrate in two second gaps Resistance layer (24), two resistive layers extend towards second front electrode at the center of covering, two resistive layers A part for second front electrode at both ends is extended over backwards；The resistive layer upper surface is successively covered with one layer First protective layer (26) and one layer of second protective layer (28)；First protective layer covers all the resistive layer, and described Two protective layers cover all first protective layer, and second protective layer extend and cover at both ends described second A part for front electrode；It is additionally provided with side electrode (33), nickel coating (40) and tin coating (50), the side electrode and covers all the insulation The end face of second front electrode at the end face of first front electrode at the end face at substrate both ends, both ends, both ends With the end face of the backplate at both ends；The nickel coating covers all second front electrode, side electricity Pole and the backplate, and the nickel coating is overlapped on the end face of second protective layer；The tin coating covers residence Nickel coating is stated, and the tin coating is overlapped on the end face of second protective layer.
- 2. thick film high power low resistance patch resistor according to claim 1, it is characterised in that：Along the insulated substrate Length direction, the length of two first front electrodes at both ends is less than the length of first front electrode at center Degree.
- 3. thick film high power low resistance patch resistor according to claim 2, it is characterised in that：Second front electricity Extremely corresponding first front electrode is completely overlapped.
- 4. thick film high power low resistance patch resistor according to claim 3, it is characterised in that：Along the insulated substrate Thickness direction, two second gaps are mapped onto the back side corresponding to the insulated substrate lower surface to wearing separately down On electrode.
- 5. thick film high power low resistance patch resistor according to claim 4, it is characterised in that：Two institutes at both ends State between first protective layer at the resistive layer and the center between the second front electrode and the nickel coating, at center Be respectively equipped with one layer of the 3rd front electrode (25), two the 3rd front electrodes at both ends with the described 3rd at center just At a distance of setpoint distance between the electrode of face, two third spaces are formed, and second protective layer extends and covered at both ends A part for 3rd front electrode；Second protective layer is outer to be protected covered with one layer of the 3rd protective layer (29), the described 3rd Sheath covers all second protective layer, and the 3rd front that the 3rd protective layer extends and covered at both ends A part for electrode；The nickel coating and the tin coating are overlapped on the end face of the 3rd protective layer respectively.
- 6. thick film high power low resistance patch resistor according to claim 5, it is characterised in that：Along the insulated substrate Length direction, the length of two the 3rd front electrodes at both ends is less than the length of the 3rd front electrode at center Degree, and two second gaps are symmetrically mapped onto on corresponding two third spaces upwards respectively.
- 7. thick film high power low resistance patch resistor according to claim 6, it is characterised in that：Two institutes at both ends It is to be adjusted by laser to the resistive layer of setting resistance to state resistive layer, and the 3rd protective layer outer portion is covered with one layer of word Code label layer (30).
- A kind of 8. manufacture method of thick film high power low resistance patch resistor, it is characterised in that：Comprise the following steps：A, a sheet of insulated substrate (10) is prepared, in the upper surface of the insulated substrate (21) and lower surface (31) if being formed uniformly The folding bar line (12) and some folding grain lines (11) along its length of dry bar in the width direction, the folding bar line and the folding grain Line intersects to form clathrate；B, using every folding bar line as symmetry axis, one layer of electrode is symmetrically printed at the folding bar line of the insulated substrate lower surface (31) Material, then it is dried, forms backplate (32)；Wherein, using each grid as unit, two back sides at both ends At a distance of setpoint distance between electrode, the first gap is formed；C, using every folding bar line as symmetry axis, first layer electricity is symmetrically printed at the folding bar line of the insulated substrate upper surface (21) Pole material, and first layer electrode material is printed at the center of each grid, then it is dried, forms the first front electrode (22)；Wherein, using each grid as unit, two first front electrodes at both ends respectively with described first at center At a distance of setpoint distance between front electrode, form two the second gaps, and this two second gaps in vertical direction to Under be mapped onto to wearing corresponding to insulated substrate lower surface in backplate；Two first front electrodes at both ends are along length The length in direction is respectively smaller than the length of the first front electrode along its length at center；D, in the first front electrode surface printing second layer electrode material, then it is dried and sinters, is forming second just Face electrode (23)；Wherein, second front electrode and first front electrode are completely overlapped；E, using each grid as unit, printed resistor material on the insulated substrate in two second gaps, described in two The resistance material printed in second gap extends towards and covers all second front electrode at center, and two institutes State the part that the resistance material printed in the second gap extends over second front electrode at both ends backwards；Then It is dried and sinters, forms resistive layer (24)；F, using each grid as unit, in the surface and therebetween resistive layer of second front electrode at both ends Third layer electrode material is printed on surface at the heart, is then dried and sinters, forms the 3rd front electrode (25)；Wherein, At a distance of setpoint distance between the 3rd front electrode at two the 3rd front electrodes and center at both ends, two are formed Individual third space, two second gaps are symmetrically mapped onto on corresponding third space upwards in vertical direction；G, using each grid as unit, the 3rd front electrode surface printing first at the resistance layer surface and center Layer insulating materials, and the first layer insulating materials printed extends over one of the 3rd front electrode at both ends to both ends Part, then it is dried and sinters, forms the first protective layer (26)；H, using each grid as unit, using radium-shine laser to knife cutting mode, through first protective layer, described in two Multitool is carried out on two resistive layers in second gap respectively and repeats radium-shine laser cutting, forms radium-shine tangent line (27), is adjusted The resistance value of the whole resistive layer reaches required resistance；I, using each grid as unit, second layer insulating materials is printed in first protective layer, is then dried, shape Into the second protective layer (28), wherein, second protective layer covers all first protective layer, and second protective layer A part for second front electrode for extending along its length and covering at both ends, second protective layer is along width side Rolled over to extending at grain line；J, using each grid as unit, third layer insulating materials is printed in second protective layer, after being dried, then One layer of marking materials of surface printing of third layer insulating materials, after being dried, then is sintered；Third layer insulating materials is formed 3rd protective layer (29), marking materials form character code label layer (30), and the 3rd protective layer and the second protective layer are completely overlapped；K, the insulated substrate after step a~j is sequentially converted into strip semi-finished product along every folding bar line of the insulated substrate；L, the side formed using vacuum sputtering machines to the strip semi-finished product folding bar is sputtered, and forms side electrode (33), The side electrode extends over residence and states the end face of the first front electrode, the end face of second front electrode, the described 3rd The end face of front electrode and the end face of the backplate；M, the strip semi-finished product after step a~l are sequentially converted into along every folding grain line on the strip semi-finished product granular Semi-finished product；N, one layer is electroplated using barrel plating mode on the 3rd front electrode, side electrode and backplate of the granular semi-finished product Metallic nickel, forms nickel coating (40), and the nickel coating covers all the 3rd front electrode, the side electrode and described Backplate, and the nickel coating is overlapped on two end faces of the 3rd protective layer；O, layer of metal tin is electroplated using barrel plating mode on the surface of the nickel coating, forms one layer of tin coating (50), the plating Tin layers cover all the nickel coating, and the tin coating is overlapped on two end faces of the 3rd protective layer.
- 9. the manufacture method of thick film high power low resistance patch resistor according to claim 8, it is characterised in that：Step Print electrode the material that prints electrode in the mode of printing of material, step d that prints electrode in the mode of printing of material, step c in b Printed electrode in mode of printing, step e in the mode of printing of printed resistor material, step f in the mode of printing of material, step g Print the print that insulating materials is printed in the mode of printing that insulating materials is printed in the mode of printing of insulating materials, step i, step j The mode of printing of printing mark material is silk-screen printing in brush mode, step j.
- 10. the manufacture method of thick film high power low resistance patch resistor according to claim 8, it is characterised in that：Step The electrode material printed in rapid b is silver-colored palladium slurry, and the electrode material printed in step c is silver-colored palladium slurry, the electricity printed in step d Pole material is silver-colored palladium slurry, and the electrode material printed in step f is silver-colored palladium slurry, and the insulating materials printed in step g is glass Slurry, the insulating materials printed in step i is resin slurry, and the insulating materials printed in step j is resin slurry.
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