CN109036749B - Manufacturing process of current detection resistor - Google Patents
Manufacturing process of current detection resistor Download PDFInfo
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- CN109036749B CN109036749B CN201810693383.3A CN201810693383A CN109036749B CN 109036749 B CN109036749 B CN 109036749B CN 201810693383 A CN201810693383 A CN 201810693383A CN 109036749 B CN109036749 B CN 109036749B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/288—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
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Abstract
The invention provides a manufacturing process of a current detection resistor, and relates to the technical field of resistors. Wherein the current detection resistor comprises: the resistor comprises an insulating substrate, a resistor disc, a protective layer, a back electrode, a side electrode, a copper layer, a nickel layer and a tin layer. The resistor disc covers the lower surface of the insulating substrate, the resistor disc and the insulating substrate are connected through adhesive glue, a back electrode is respectively plated at the left end and the right end of the resistor disc in a hanging mode, a layer of side electrode is respectively sputtered on the left side surface and the right side surface of the insulating substrate, the side electrode can be connected with the back electrode on the same side, and the protective layer covers the position, except the electrode, on the surface of the resistor disc. And a copper layer, a nickel layer and a tin layer are respectively and sequentially plated on the surfaces of the back electrode and the side electrode on the same side of the insulating substrate in a rolling manner, one ends of the copper layer, the nickel layer and the tin layer are lapped on the upper surface of the insulating substrate, and the other ends of the copper layer, the nickel layer and the tin layer are lapped on the back electrode.
Description
Technical Field
The invention relates to the technical field of resistors, in particular to a manufacturing process of a current detection resistor.
Background
With the development of the technology, the development of the era and the continuous improvement of the miniaturization requirement of people on electronic products, the chip resistor with reliable performance and stable process also shows the diversified development trend according to the characteristic requirements of the electronic products, wherein the current detection resistor shows the miniaturization development trend. In general, in order to ensure stable operation of an electronic product, a power supply is provided to ensure normal and stable operation of the electronic product, and the stable operation of the power supply cannot be separated from a low-resistance resistor connected to a feedback circuit for current detection, which is a current detection resistor.
The market demand for small current sense resistors is great, and the small current sense resistors in the prior art generally comprise: the device comprises an insulating substrate, an alloy layer, a back electrode, a side electrode, a protective layer, a copper plating layer, a nickel plating layer and a tin plating layer. The small current detection resistor in the prior art can form a step structure on one surface of the back electrode, so that the process difficulty of copper plating, nickel plating and tin plating is increased, and poor connection of the side electrode and the back electrode is easily caused. In addition, in the small current detection resistor of the prior art, the adhesive film is used between the alloy layer and the insulating substrate, and the contact area between the alloy layer and the insulating substrate of the small current detection resistor is too small, so that the alloy layer and the insulating substrate are not firmly adhered. In view of the above, the inventors of the present invention have made a study of the prior art and then have made the present application.
Disclosure of Invention
The invention provides a manufacturing process of a current detection resistor, aiming at solving the problem that a small current detection resistor cannot work in a high-power circuit.
In order to solve the technical problem, the invention provides a manufacturing process of a current detection resistor, which is characterized by comprising the following specific steps of:
s1: cutting an insulating substrate according to design, marking two first marking lines and two second marking lines on the upper surface and the lower surface of the insulating substrate, and respectively crossing the two first marking lines and the two second marking lines on the upper surface and the lower surface of the insulating substrate to form an outer frame line;
s2: covering a layer of adhesive glue on the lower surface of the insulating substrate;
s3: pasting a layer of alloy sheet on the adhesive, and pressurizing and baking;
s4: attaching a first photosensitive film on the alloy sheet, and carrying out photoetching and exposure to form positions of back electrodes required by a plurality of resistors on the first photosensitive film;
s5: forming a back electrode at the position of the back electrode and removing the first photosensitive film;
s6: marking a folding line on the alloy sheet by adopting a laser technology, cutting the alloy sheet into two parts by the folding line, wherein the folding line interval range formed by the folding line is 50-60 micrometers;
s7: covering a layer of second photosensitive film on the alloy sheet, carrying out photoetching and exposure, respectively forming positions of an etching area and a non-etching area on the alloy sheet, removing the etching area by etching technology, and removing the second photosensitive film after etching, wherein the non-etching area forms resistance parts of a plurality of resistors, the area formed by the etching area comprises grain folding lines crossed with the grain folding lines, the grain folding lines and the grain folding lines divide the resistance parts of the plurality of resistors into independent units, and each unit comprises two independent back electrodes;
s8: correcting the resistance values of the resistance parts of the plurality of resistors by laser to achieve the resistance value precision required by the resistors;
s9: covering a protective layer on the resistance parts of the resistors and drying the protective layer, wherein the protective layer is made of an insulating material;
s10: removing the parts except the outer frame line of the insulating substrate along the first marking line and the second marking line, and cutting the insulating substrate into two parts along the folding line;
s11: manufacturing a side electrode on a cutting surface formed by the folding line and the side surface of the insulating substrate opposite to the cutting surface;
s12: further cutting the insulating substrate after the steps of S1 to S11 into a granular semi-finished product along the grain folding line, the granular semi-finished product including two back electrodes and two side electrodes;
s13: and plating a plurality of metal layers on the two side electrodes and the two back electrodes of the granular semi-finished product, wherein the metal layers are connected with one back electrode and one side electrode on the same side, one end of each metal layer is lapped on the upper surface of the insulating substrate, and the other end of each metal layer is lapped on the back electrode on the lower surface of the insulating substrate.
As a further optimization, the specific steps of step S13 are as follows:
s131: electroplating a layer of metal copper on the two side electrodes and the two back electrodes of the granular semi-finished product by a barrel plating technology to form a copper layer, wherein the copper layer is connected with one back electrode and one side electrode on the same side, one end of the copper layer is lapped on the upper surface of the insulating substrate, and the other end of the copper layer is lapped on the back electrode on the lower surface of the insulating substrate;
s132: electroplating a layer of metal nickel on the surface of the copper layer by adopting a barrel plating technology to form a nickel layer, wherein the nickel layer completely covers the copper layer, one end of the nickel layer is lapped on the upper surface of the insulating substrate, and the other end of the nickel layer is lapped on a back electrode on the lower surface of the insulating substrate;
s133: and electroplating a layer of metallic tin on the surface of the nickel layer by adopting a barrel plating technology to form a tin layer, wherein the tin layer completely covers the nickel layer, one end of the tin layer is lapped on the upper surface of the insulating base plate, and the other end of the tin layer is lapped on the back electrode on the lower surface of the insulating base plate.
As a further optimization, in step S1, two first mark lines and two second mark lines are marked on both the upper surface and the lower surface of the insulating substrate by using a laser.
As a further optimization, in step S5, the back electrode is formed by rack plating at the position of the back electrode by using a rack plating technique.
As a further optimization, in step S10, a scribing machine is used to remove the portion of the insulating substrate other than the outer frame line along the first mark line and the second mark line, and simultaneously, the insulating substrate is cut into two portions along the folding line; the step S12 of further cutting the insulating substrate after the step S1-S11 into a granular semi-finished product along the grain folding line by using a scribing machine; because the range of the distance between the folding strips formed by the folding lines is 50-60 micrometers, after the insulating substrate is cut into two parts along the folding lines, the distance between the back electrode and the cutting surface is 25-30 micrometers.
As a further optimization, in step S11, a vacuum sputtering machine is used to sputter the cut surface formed by the folded wire and the side surface of the insulating substrate opposite to the cut surface, so as to form the side surface electrodes required by the plurality of resistors.
Preferably, the insulating substrate is made of a ceramic material, the alloy sheet is made of an alloy foil, and the protective layer is made of a photosensitive resin.
Preferably, the resistance part of the resistor and the back electrode form an i-shaped structure, wherein the back electrode forms the upper end and the lower end of the i-shaped structure, and the resistance part of the resistor forms the middle part of the i-shaped structure.
As a further optimization, the folded grain spacing formed by the folded grain lines is 100-200 microns.
By adopting the technical scheme, the invention can obtain the following technical effects:
1. according to the current detection resistor, the distance between the back electrode and the side face of the same side of the insulating substrate is 25-30 micrometers, and the side electrode and the back electrode can be directly connected during sputtering of the side electrode, so that a step structure cannot be formed on one face of the back electrode, the process of hanging copper plating, nickel plating and tin plating is simpler, and meanwhile, the connection between the side electrode and the back electrode is better;
2. according to the current detection resistor, the resistor disc and the insulating substrate are connected through the adhesive, so that the resistor disc and the insulating substrate can be firmly adhered together;
3. according to the current detection resistor, the resistance sheet is made of alloy foil, the insulating substrate is made of ceramic material, the side electrode is sputtered with nickel-chromium alloy, and the back electrode and the side electrode are sequentially coated with the copper layer, the nickel layer and the tin layer in a hanging manner, so that the small current detection resistor has better heat dissipation performance, can be used on a circuit with higher power, and improves the practicability of the resistor.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic cross-sectional view of a current sense resistor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the current sense resistor after step S1 according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the current sense resistor after step S2 according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the current sense resistor after step S3 according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a current sense resistor after covering the first photosensitive film 13 according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the current sense resistor after step S4 according to one embodiment of the present invention;
FIG. 7 is a schematic diagram of the current sense resistor after step S5 according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the current sense resistor after step S6 according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a current sense resistor after covering the first photosensitive film 13 according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of the current sense resistor after step S7 according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of the current sense resistor after step S9 according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of the current sense resistor after step S10 according to one embodiment of the present invention;
FIG. 13 is a schematic diagram of the current sense resistor after step S11 according to one embodiment of the present invention;
FIG. 14 is a schematic cross-sectional view of a current sensing resistor according to the prior art;
the labels in the figure are: 1-insulating substrate, 2-adhesive glue, 3-resistor disc, 4-protective layer, 5-copper layer, 6-nickel layer, 7-tin layer, 8-back electrode, 9-side electrode, 10-first marking line, 11-second marking line, 12-alloy sheet, 13-first photosensitive film, 14-folding line, 15-second photosensitive film, 16-folding line, 17-resistor R part, 18-adhesive film and 19-step.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The invention is described in further detail below with reference to the following detailed description and accompanying drawings:
as shown in fig. 1, in the present embodiment, a current detection resistor includes: insulating substrate 1, resistance card 3, protective layer 4, back electrode 8, side electrode 9, copper layer 5, nickel layer 6, and tin layer 7. The resistor disc 3 covers the lower surface of the insulating substrate 1, the resistor disc 3 is connected with the insulating substrate 1 through the adhesive 2, the left end and the right end of the resistor disc 3 are respectively coated with a back electrode 8 in a hanging mode, the left side surface and the right side surface of the insulating substrate 1 are respectively sputtered with a layer of side surface electrodes 9, the side surface electrodes 9 can be connected with the back electrodes 8 on the same side, and the protective layer 4 covers the surface of the resistor disc 3 except the positions of the electrodes; a copper layer 5 is barrel-plated on the surface of the s-side electrode 9 on the same side of the insulating substrate 1, the copper layer 5 completely covers the back electrode 8 and the side electrode 9 on the same side, and one end of the copper layer 5 is lapped on the upper surface of the insulating substrate 1 and the other end is lapped on the back electrode 8; a nickel layer 6 is respectively barrel-plated on the surfaces of the copper layers 5 at the left side and the right side of the insulating substrate 1, the nickel layer 6 completely covers the copper layers 5 at the same side, one end of the nickel layer 6 is lapped on the upper surface of the insulating substrate 1, and the other end is lapped on the back electrode 8; the surfaces of the nickel layers 6 on the left side and the right side of the insulating substrate 1 are respectively plated with a tin layer 7 in a rolling way, the tin layers 7 completely cover the nickel layers 6 on the same side, one end of each tin layer 7 is lapped on the upper surface of the insulating substrate 1, and the other end of each tin layer is lapped on the back electrode 8. In the present embodiment, the adhesive glue 2 is an epoxy glue.
Fig. 1 and 14 show a cross-sectional view of a small current sensing resistor in the prior art, wherein fig. 14 is a schematic diagram of a cross-sectional structure of a small current sensing resistor in the prior art, the small current detecting resistor is generally formed by bonding a large alloy sheet 12 on a large insulating substrate 1, forming a plurality of resistance portions required for the small current detecting resistor by etching, because the distance between two adjacent etched resistors is 100-200 microns, after the insulating substrate 1 is cut by a scribing machine, the distance D between the back electrode 8 and the side surface of the insulating substrate 1 on the same side is 50 to 100 μm, and since this distance is large, it is difficult to connect the side electrode 9 formed by sputtering and the back electrode 8 when sputtering the side electrode 9, so that it is generally necessary to sputter a corner at the time of sputtering, after the copper layer 5, the nickel layer 6, and the tin layer 7 are plated, a step 19 is formed on the rear surface side of the insulating substrate 1. According to the small-sized current detection resistor, the method of combining etching and laser cutting is adopted at the resistance part required by the resistor, the precision of laser cutting of the alloy sheet 12 is high, the formed cutting distance is 50-60 micrometers, after the insulating substrate 1 is cut by a scribing machine, the distance between the back electrode 8 and the side face of the same side of the insulating substrate 1 can be controlled to be 25-30 micrometers, the side electrode 9 and the back electrode 8 can be directly connected when the side electrode 9 is sputtered, and therefore the step 19 does not need to be formed on the back face of the insulating substrate 1.
As shown in fig. 10, in the present embodiment, the resistive sheet 3 is i-shaped, the back electrodes 8 are formed at the front and rear ends of the resistive sheet 3 by rack plating, and the middle portion of the i-shaped resistive sheet 3 is the resistance portion of the resistor, which forms the resistor R portion 17 of the resistor. In this embodiment, the resistance chip 3 is made of an alloy foil, the insulating substrate 1 is made of a ceramic material, the protective layer 4 is made of a photosensitive resin, and the side electrode 9 is made of a nickel-chromium alloy.
As shown in fig. 2 to 13, in the present embodiment, a specific manufacturing process of the current detection resistor includes the following steps:
s1: cutting out an insulating substrate 1 according to a design, marking two first marking lines 10 and two second marking lines 11 on the upper surface and the lower surface of the insulating substrate 1, respectively, and enabling the two first marking lines 10 and the two second marking lines 11 to cross on the upper surface and the lower surface of the insulating substrate 1 to form outer frame lines, wherein fig. 2 is a structural schematic diagram of the current detection resistor after the step S1;
s2: covering a layer of adhesive 2 on the lower surface of the insulating substrate 1, and fig. 3 is a schematic structural diagram of the current detection resistor after step S2;
s3: attaching an alloy sheet 12 on the adhesive 2, and performing pressure baking, wherein fig. 4 is a schematic structural diagram of the current detection resistor after step S3;
s4: attaching a first photosensitive film 13 on the alloy sheet 12, and performing photolithography and exposure to form positions of the back electrodes 8 required by a plurality of resistors on the first photosensitive film 13, wherein fig. 5 is a schematic structural view of the current detection resistor after covering the first photosensitive film 13, and fig. 6 is a schematic structural view of the current detection resistor after step S4;
s5: at the position of the back electrode 8, the back electrode 8 is formed and the first photosensitive film 13 is removed, and fig. 7 is a schematic structural view of the current detection resistor after step S5;
s6: marking a folding line 14 on the alloy sheet 12 by using a laser technology, wherein the folding line 14 cuts the alloy sheet 12 into two parts, the folding line interval formed by the folding line 14 ranges from 50 micrometers to 60 micrometers, and fig. 8 is a structural schematic diagram of the current detection resistor after the step S6;
s7: covering a layer of second photosensitive film 15 on the alloy sheet 12, carrying out photoetching and exposure, respectively forming positions of an etching area and a non-etching area on the alloy sheet 12, removing the etching area by etching technology, and removing the second photosensitive film 15 after etching, wherein the non-etching area forms resistance parts of a plurality of resistors, the area formed by the etching area comprises grain folding lines 16 crossed with the grain folding lines 14, the grain folding lines 16 and the grain folding lines 14 divide the resistance parts of the plurality of resistors into independent units, and each unit comprises two independent back electrodes 8; wherein the folded grain spacing of the folded grain lines 16 formed by adopting the etching technology is 100-200 microns; fig. 9 is a schematic structural view of the current detection resistor after covering the second photosensitive film 15, and fig. 10 is a schematic structural view of the current detection resistor after step S7;
s8: correcting the resistance values of the resistance parts of the plurality of resistors by laser to achieve the resistance value precision required by the resistors;
s9: covering a protection layer 4 on the resistance portions of the resistors, drying the protection layer 4, wherein the protection layer 4 is made of an insulating material, and fig. 11 is a schematic structural diagram of the current detection resistor after step S9;
s10: removing the portions of the insulating substrate 1 other than the outer frame line along the first and second mark lines 10 and 11, and cutting the insulating substrate 1 into two portions along the folding line 14, where fig. 12 is a schematic structural view of the current detection resistor after step S10;
s11: a side electrode 9 is formed on a cut surface formed on the folding line 14 and a side surface of the insulating substrate 1 opposite to the cut surface;
s12: further cutting the insulating substrate 1 after the steps S1 to S11 into a granular semi-finished product along a grain folding line 16, the granular semi-finished product including two back electrodes 8 and two side electrodes 9;
s13: on the two side electrodes 9 and the two back electrodes 8 of the granular semi-finished product, a plurality of metal layers are plated, the metal layers connect one back electrode 8 and one side electrode 9 on the same side, one end of each metal layer is lapped on the upper surface of the insulating substrate 1, and the other end of each metal layer is lapped on the back electrode 8 on the lower surface of the insulating substrate 1.
As shown in fig. 1, in this embodiment, step S13 includes the following steps:
s131: plating a layer of metal copper on two side electrodes 9 and two back electrodes 8 of the granular semi-finished product by a barrel plating technology to form a copper layer 5, wherein the copper layer 5 is connected with one back electrode 8 and one side electrode 9 on the same side, one end of the copper layer 5 is lapped on the upper surface of the insulating substrate 1, and the other end of the copper layer 5 is lapped on the back electrode 8 on the lower surface of the insulating substrate 1;
s132: plating a layer of metal nickel on the surface of the copper layer 5 by adopting a barrel plating technology to form a nickel layer 6, wherein the nickel layer 6 completely covers the copper layer 5, one end of the nickel layer 6 is lapped on the upper surface of the insulating substrate 1, and the other end of the nickel layer is lapped on a back electrode 8 on the lower surface of the insulating substrate 1;
s133: and plating a layer of metallic tin on the surface of the nickel layer 6 by adopting a barrel plating technology to form a tin layer 7, wherein the tin layer 7 completely covers the nickel layer 6, one end of the tin layer 7 is lapped on the upper surface of the insulating substrate 1, and the other end of the tin layer is lapped on a back electrode 8 on the lower surface of the insulating substrate 1.
In the present embodiment, in step S1, two first mark lines 10 and two second mark lines 11 are marked on both the upper surface and the lower surface of the insulating substrate 1 using laser light. In step S5, the back electrode 8 is formed by rack plating at the position of the back electrode 8 by using the rack plating technique. In step S10, a scribing machine is used to remove the portions of the insulating substrate 1 other than the outer frame line along the first and second marking lines 10, 11, and simultaneously, the insulating substrate 1 is cut into two portions along the folding line 14. In step S11, the cut surface formed by the scribe line 14 and the side surface of the insulating substrate 1 to which the cut surface faces are sputtered by a vacuum sputtering machine to form the side surface electrodes 9 necessary for the plurality of resistors. Step S12, adopting a scribing machine to further cut the insulating substrate 1 after the step S1-S11 into granular semi-finished products along the grain folding line 16; because the range of the distance between the folding strips formed by the folding line 14 is 50-60 micrometers, after the insulating substrate 1 is cut into two parts along the folding line 14, the distance between the back electrode 8 and the cutting surface is 25-30 micrometers.
In this embodiment, the insulating substrate 1 is made of a ceramic material, the alloy sheet 12 is made of an alloy foil, and the protective layer 4 is made of a photosensitive resin. As shown in fig. 10, the resistance portion of the resistor and the back electrode 8 form an i-shaped structure, wherein the back electrode 8 forms the upper and lower ends of the i-shaped structure, and the resistance portion of the resistor forms the middle portion of the i-shaped structure.
In this embodiment, the alloy sheet 12 and the insulating substrate 1 are firmly bonded together by the adhesive 2, whereas in the prior art, the alloy sheet 12 and the insulating substrate 1 are bonded together by the adhesive film 18, which often results in poor adhesion between the alloy sheet 12 and the insulating substrate 1 due to the small contact area between the alloy sheet 12 and the insulating substrate 1 of the small current detection resistor. In the prior art, the adhesive film 18 is thinner, the adhesive film 18 of the fold line 14 and the fold grain line 16 can be directly removed in the process of etching the alloy sheet 12, and the insulating substrate 1 is directly divided along the fold line 14 and the fold grain line 16 by a cutting machine; however, after the adhesive 2 is used, in the process of etching the alloy sheet 12, the adhesive 2 along the grain folding line 16 is thicker and more adhesive, and therefore cannot be removed, but the invention adopts a method combining etching and laser cutting, and can cut off the adhesive 2 by laser after etching, and finally cut the insulating substrate 1 by a line etching machine. In addition, the small-sized current detection resistor of the invention, the material of the resistance sheet 3 is alloy foil, the material of the insulating substrate 1 is ceramic material, and the side electrode 9 is sputtered by nichrome, and the copper layer 5, the nickel layer 6 and the tin layer 7 are hung and plated on the back electrode 8 and the side electrode 9 in sequence, so that the small-sized current detection resistor of the invention has better heat dissipation performance, can be used on a circuit with higher power, and improves the practicability of the resistor.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A manufacturing process of a current detection resistor is characterized by comprising the following specific steps:
s1: cutting an insulating substrate (1) according to design, marking two first marking lines (10) and two second marking lines (11) on the upper surface and the lower surface of the insulating substrate (1), and respectively crossing the two first marking lines (10) and the two second marking lines (11) on the upper surface and the lower surface of the insulating substrate (1) to form an outer frame line;
s2: covering a layer of adhesive (2) on the lower surface of the insulating substrate (1);
s3: attaching a layer of alloy sheet (12) on the adhesive (2), and carrying out pressure baking;
s4: attaching a first photosensitive film (13) on the alloy sheet (12), and carrying out photoetching and exposure to form positions of back electrodes (8) required by a plurality of resistors on the first photosensitive film (13);
s5: forming a back electrode (8) at the position of the back electrode (8) and removing the first photosensitive film (13);
s6: marking a folding line (14) on the alloy sheet (12) by adopting a laser technology, cutting the alloy sheet (12) into two parts by the folding line (14), wherein the folding line interval formed by the folding line (14) is 50-60 micrometers;
s7: covering a layer of second photosensitive film (15) on the alloy sheet (12), carrying out photoetching and exposure, respectively forming positions of an etching area and a non-etching area on the alloy sheet (12), removing the etching area by an etching technology, and removing the second photosensitive film (15) after etching, wherein the non-etching area forms resistance parts of a plurality of resistors, the area formed by the etching area comprises grain folding lines (16) crossed with the grain folding lines (14), the grain folding lines (16) and the grain folding lines (14) divide the resistance parts of the plurality of resistors into independent units, and each unit comprises two independent back electrodes (8);
s8: correcting the resistance values of the resistance parts of the plurality of resistors by laser to achieve the resistance value precision required by the resistors;
s9: covering a protective layer (4) on the resistance parts of the resistors and drying, wherein the protective layer (4) is made of an insulating material;
s10: removing the parts except the outer frame line of the insulating substrate (1) along the first marking line (10) and the second marking line (11), and simultaneously cutting the insulating substrate (1) into two parts along the folding line (14);
s11: a side electrode (9) is manufactured on a cutting surface formed on the folding line (14) and the side surface of the insulating substrate (1) opposite to the cutting surface;
s12: cutting the insulating substrate (1) subjected to the steps S1-S11 through laser along the grain folding line (16) to penetrate the adhesive glue (2), and further cutting the insulating substrate into a granular semi-finished product by using a line engraving machine, wherein the granular semi-finished product comprises two back electrodes (8) and two side electrodes (9);
s13: and plating a plurality of metal layers on the two side electrodes (9) and the two back electrodes (8) of the granular semi-finished product, wherein the plurality of metal layers are connected with one back electrode (8) and one side electrode (9) on the same side, one end of each metal layer is lapped on the upper surface of the insulating substrate (1), and the other end of each metal layer is lapped on the back electrode (8) on the lower surface of the insulating substrate (1).
2. The manufacturing process of a current sensing resistor as claimed in claim 1, wherein the step S13 is as follows:
s131: electroplating a layer of metal copper on two side electrodes (9) and two back electrodes (8) of the granular semi-finished product by a barrel plating technology to form a copper layer (5), wherein the copper layer (5) is connected with one back electrode (8) and one side electrode (9) on the same side, one end of the copper layer (5) is lapped on the upper surface of the insulating substrate (1), and the other end of the copper layer (5) is lapped on the back electrode (8) on the lower surface of the insulating substrate (1);
s132: electroplating a layer of metal nickel on the surface of the copper layer (5) by adopting a barrel plating technology to form a nickel layer (6), wherein the nickel layer (6) completely covers the copper layer (5), one end of the nickel layer (6) is lapped on the upper surface of the insulating substrate (1), and the other end of the nickel layer is lapped on a back electrode (8) on the lower surface of the insulating substrate (1);
s133: electroplating a layer of metallic tin on the surface of the nickel layer (6) by adopting a barrel plating technology to form a tin layer (7), wherein the tin layer (7) completely covers the nickel layer (6), one end of the tin layer (7) is lapped on the upper surface of the insulating substrate (1), and the other end of the tin layer is lapped on a back electrode (8) on the lower surface of the insulating substrate (1).
3. A manufacturing process of a current detection resistor according to claim 1, wherein in the step S1, two first mark lines (10) and two second mark lines (11) are marked on the upper surface and the lower surface of the insulating substrate (1) by using laser.
4. A process for manufacturing a current sensing resistor according to claim 1, wherein said step S5 is performed by using a rack plating technique to form said back electrode (8) at the position of said back electrode (8).
5. The manufacturing process of a current detection resistor according to claim 1, wherein the step S10 is to remove the portion of the insulating substrate (1) other than the outer frame line along the first and second marking lines (10, 11) by using a scribing machine, and to cut the insulating substrate (1) into two parts along the folding line (14); and S12, further cutting the insulating substrate (1) subjected to the steps S1-S11 into granular semi-finished products by a dividing machine along the grain folding line (16).
6. The manufacturing process of a current detection resistor according to claim 1, wherein in step S11, a vacuum sputtering machine is used to sputter the cut surface formed by the folded wire (14) and the side surface of the insulating substrate (1) opposite to the cut surface to form the side electrodes (9) required by a plurality of resistors.
7. The manufacturing process of a current detection resistor as claimed in claim 1, wherein the insulating substrate (1) is made of a ceramic material, the alloy sheet (12) is made of an alloy foil, and the protective layer (4) is made of a photosensitive resin.
8. The manufacturing process of a current detection resistor as claimed in claim 1, wherein the grain folding lines (16) are formed with grain folding intervals of 100-200 μm.
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| CN107230537B (en) * | 2016-03-25 | 2022-09-30 | 昆山厚声电子工业有限公司 | Metal foil type current detection resistor and manufacturing process thereof |
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