CN107180690A - Thick film high pressure patch resistor and its manufacture method - Google Patents
Thick film high pressure patch resistor and its manufacture method Download PDFInfo
- Publication number
- CN107180690A CN107180690A CN201710448970.1A CN201710448970A CN107180690A CN 107180690 A CN107180690 A CN 107180690A CN 201710448970 A CN201710448970 A CN 201710448970A CN 107180690 A CN107180690 A CN 107180690A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000010410 layer Substances 0.000 claims abstract description 43
- 239000011241 protective layer Substances 0.000 claims abstract description 36
- 239000002002 slurry Substances 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 238000007689 inspection Methods 0.000 claims abstract description 4
- 238000010422 painting Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 238000007639 printing Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000009966 trimming Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 abstract description 3
- 239000000047 product Substances 0.000 description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000005611 electricity Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000006071 cream Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/032—Housing; Enclosing; Embedding; Filling the housing or enclosure plural layers surrounding the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Thick film high pressure patch resistor, in the back side spacing printed back electrode (2) of an insulated substrate (1) with transverse direction and longitudinal direction line of weakness, then, again front surface A gPd electrodes (3) are made in insulated substrate (1) front surface, after sintering between front surface A gPd electrodes (3), snakelike screen painting resistive layer (4) is used using high pressure resistant slurry, the first protective layer (5) made again in resistive layer (4) uper side surface after sintered, after radium-shine adjustment resistance, republish the second protective layer (6) and character code sign, then folding bar is passed through again, sputtering, roll over grain, after plating and inspection bag technological process, it is fabricated to finished product resistance.Square structure before being replaced by the selection of high pressure resistant resistance slurry and the serpentine resistive structure for the Curve guide impeller that becomes more meticulous, increases the length of conductive strips, circuit space cost is saved, so as to strengthen the pressure-resistant performance of product.
Description
Technical field
The structure improved technology for H01C resistors electronic device and its manufacture method of classifying the present invention relates to IPC, especially
Thick film high pressure patch resistor and its manufacture method.
Background technology
In the prior art, the application of thick-film resistor is quite throughout from general domestic electronic appliances to most advanced electricity
Each category such as sub- computer, aviation and space flight has the figure of thick film Chip-R, and its application category is also ceaselessly expanding
Greatly.
The steadiness of thick film Chip-R refers to the performance parameters such as the resistance of resistor in use or storage course with such as
Situations such as temperature and humidity condition change or the change that is produced due to the aging of oneself, it is clear that thick film Chip-R it is steady
Solidity should meet the requirement that electronics sets the technical ability condition of equipment fielding to be delimited, to ensure the normal fortune for setting equipment fielding
OK.The many factors such as the steadiness of thick-film resistor and the material technology condition, substrate performance and resistance trimming of resistance are relevant.It is logical
Commonly use under conditions of 150 DEG C or 40 DEG C and 90% relative humidity, the change of resistance is turned to thick-film resistor after permanent (1000H) storage
The steadiness index of device.Now, the difference of the size of its size of chip-resistance authority or laser cutting pattern, change in resistance one
Sample, generally smaller than 0.2%-0.75%.
Existing its square structure of ordinary high pressure resistor, small product size is small, electric performance stablity, and reliability is high, widely applies
In fields such as power supply adaptor, inverter, converter, LCD backlight circuit, auto industry, high impulse equipment.
Chinese patent application 201620127654.5 discloses a kind of high resistant patch resistor, including aluminium oxide ceramics sheet
Body, the both sides difference printed back electrode of the aluminium oxide ceramics body upper surface, positive electricity is printed in the both sides of lower surface respectively
Resistance body is printed on pole, and aluminium oxide ceramics body upper surface between two backplates, the upper surface of the resistance body is set
There is the first protective layer, the upper surface of first protective layer is provided with the second protective layer, the both sides of the aluminium oxide ceramics body
Side electrode is provided with, front electrode is formed and is turned on backplate, and on the backplate, front electrode and side electrode
Nickel dam is coated with, the outer surface of the nickel dam is provided with tin layers.
The manufacture method of typical high-voltage resistor is as described below：
1) forms backplate at the back side of large stretch of insulated substrate using silk-screen printing, and is dried；
2) forms front electrode in the front of above-mentioned insulated substrate using silk-screen printing, and is dried；And burnt
Into.
3) forms square resistive layer in the inner side of above-mentioned front electrode using silk-screen printing, and is dried and burns till, should
The two ends of resistive layer are connected to above-mentioned front electrode；
4) forms the first protective layer, i.e. glassivation on above-mentioned resistive layer, and is dried and burns till；
5) carries out accurate resistance trimming for above-mentioned resistive layer by laser, its resistance value is reached setting；
6) used again on above-mentioned glassivation screen printing mode formation the second protective layer i.e. resin protective layer with
And label layer, and be dried and burn till；
7) substrate is sequentially converted into strip by above-mentioned big plate base by using special equipment along each longitudinal folding bar line, and
Automatically it is stacked in special fixture；
8) strip-shaped product is sequentially converted into grain by above-mentioned strip-shaped product by using special equipment along each horizontal folding grain line
Shape, forms multiple single high-tension resistives.
9) is formed by above-mentioned high-tension resistive by barrel plating mode on above-mentioned front electrode, backplate and side electrode
By metallic nickel and tin nickel coating and tin coating for main component.
Have the shortcomings that protrusion is concentrated mainly in above-mentioned high-tension resistive manufacture method：
1) easily produces electrode overheating due to there was only one-step print in the front of high-tension resistive on big specification Chip-R
And the phenomenon for shortening resistor life；
2) due to resistive layer be square structure, the length of its conductive strips is shorter, limits pressure-resistant performance and improves.
The content of the invention
It is an object of the invention to provide thick film high pressure patch resistor and its manufacture method, resistance Rotating fields are improved, effectively
Increase the length of conductive strips, pressure-resistant performance, voltage coefficient index and the heat stability of electrical resistance of product are lifted, while reducing cream product
Consumption, reduces production cost.
The purpose of the present invention will be realized by following technical measures：There is backplate at insulated substrate back side two ends respectively,
There are front surface A gPd electrodes at insulated substrate front two ends respectively, have resistive layer between the front surface A gPd electrodes of two ends, on resistive layer
Successively there are the first protective layer and the second protective layer in side from inside to outside, has side electrode, side respectively in the end side surface of insulated substrate two
Face electrode connects the backplate and front surface A gPd electrodes with one end simultaneously, in side electrode, backplate and front surface A gPd electricity
Nickel electrodeposited coating and tin electrodeposited coating are successively coated with from inside to outside on the outside of pole.
Especially, in the back side spacing printed back electrode of an insulated substrate with transverse direction and longitudinal direction line of weakness, then,
Adopted again after insulated substrate front surface makes front surface A gPd electrodes, sintering between front surface A gPd electrodes using high pressure resistant slurry
With snakelike screen painting resistive layer, it is sintered after the first protective layer for being made again in resistive layer uper side surface, hindered through radium-shine adjustment
After value, the second protective layer and character code sign are republished, then again by folding bar, sputtering, folding grain, plating and inspection bag technological process
Afterwards, it is fabricated to finished product resistance.
Especially, two layers of front surface A gPd electrodes are continuously made in insulated substrate front surface.
Especially, manufacture method includes following process：
A. the carrier of manufacture high-voltage resistor is insulated substrate, in the front and back of large stretch of insulated substrate by horizontal folding bar
Line and vertical folding grain line formation clathrate.
B. silver paste is printed on the insulated substrate back side by way of silk-screen printing, printing position is located at horizontal folding bar
On line, and it is dried and burns till, forms backplate.
C. silver paste is printed on insulated substrate front by way of silk-screen printing, printing position is located at horizontal folding bar
On line, and it is dried and burns till, forms front electrode.
D. silver paste is printed on insulated substrate front by way of silk-screen printing, secondary printing position is located at horizontal
On folding bar line, and it is dried and burns till, forms front electrode.
E. slurry is printed on insulated substrate front by way of silk-screen printing, printing position be located at horizontal folding bar line with
Vertical folding grain line grid is interior and connects front electrode, is dried and burns till, forms snakelike resistive layer.
F. silver-colored palladium slurry is printed on insulated substrate front by way of silk-screen printing, with dielectric paste by snakelike electricity
The complete mask protection of resistance layer gets up, and is dried, and forms the first protective layer of a mask.
G. above resistive layer, radium-shine tangent line is formed by laser and carries out accurate resistance trimming, resistance value is reached setting.
H. resin slurry is printed on above resistive layer by way of silk-screen printing, and resistive layer is completely covered, then
It is dried, sinters, forms the second protective layer.
I. in the way of silk-screen printing, on above-mentioned second protective layer, then printing character code sign is dried, and
It is sintered together with the second protective layer.
J. substrate is sequentially converted into strip substrate by above-mentioned large stretch of insulated substrate along each longitudinal folding bar line.
K. strip substrate side surfaces are sputtered using vacuum sputtering machines, forms side electrode, connect front surface A gPd electrodes
And backplate.
L. strip-shaped product is sequentially converted into pelletized product by above-mentioned strip-shaped product along each horizontal folding grain line.
M. by the high-voltage resistor unit of above-mentioned pelletized product individual by barrel plating mode, above-mentioned front surface A gPd electrodes,
Metallic nickel and tin are electroplated in backplate and side electrode, nickel electrodeposited coating and tin electrodeposited coating is formed.
Advantages of the present invention and effect：By front electrode secondary printing, high-resistance heat dissipation characteristics can be carried；Become more meticulous
Square structure before the replacement of Curve guide impeller serpentine resistive structure, can reduce cream product consumption, reach reduction production cost purpose, electricity
The snakelike print structure of resistance layer, can increase the length of conductive strips, so as to strengthen the pressure-resistant performance of product, expand the application model of product
Enclose and field, another advantage of resistive layer snake type design is can to reduce parallel effect to bring more preferable voltage system to product
Number, makes resistance have preferable resistance stability when different voltages are used.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention 1.
Fig. 2 is manufacture method step schematic diagram in the embodiment of the present invention 1.
Fig. 3 is the positive transverse direction and longitudinal direction line of weakness schematic diagram of insulated substrate in embodiment 1；
Fig. 4 is insulated substrate backplate schematic diagram in embodiment 1；
Fig. 5 is insulated substrate front sintered electrode schematic diagram in embodiment 1；
Fig. 6 is the snakelike printed resistor layer schematic diagram in insulated substrate front in embodiment 1；
Fig. 7 is making the first protective layer schematic diagram in insulated substrate front in embodiment 1；
Fig. 8 is the accurate resistance trimming schematic diagram in insulated substrate front in embodiment 1；
Fig. 9 is making the second protective layer schematic diagram in insulated substrate front in embodiment 1；
Figure 10 is printing sign schematic diagram in insulated substrate front in embodiment 1；
Figure 11 is that the strip substrate in embodiment 1 is converted into strip side electrode schematic diagram processed；
Figure 12 is that granular semi-finished product and front, side and nickel plating and tin schematic diagram on electrode below are converted into embodiment 1；
Reference includes：
Insulated substrate 1, backplate 2, front surface A gPd electrodes 3, resistive layer 4, the first protective layer 5, the second protective layer 6, nickel
Electrodeposited coating 7, tin electrodeposited coating 8, side electrode 9.
Embodiment
The principle of the invention is that the square structure before the Curve guide impeller serpentine resistive structure that becomes more meticulous replacement, increase is conductive
The length of band, by front electrode secondary printing, carries high-resistance heat dissipation characteristics, strengthens the heat endurance of resistance.
As shown in Figure 1, there is backplate 2 at the back side two ends of insulated substrate 1 respectively, and the positive two ends of insulated substrate 1 have respectively
Front surface A gPd electrodes 3, have resistive layer 4 between two ends front surface A gPd electrodes 3, successively there is the from inside to outside in the upside of resistive layer 4
One protective layer 5 and the second protective layer 6, there is side electrode 9 respectively in 1 liang of end side surface of insulated substrate, and side electrode 9 is connected simultaneously
With the backplate 2 and front surface A gPd electrodes 3 of one end, in side electrode 9, backplate 2 and the outside of front surface A gPd electrodes 3 by inner
Nickel electrodeposited coating 7 and tin electrodeposited coating 8 are coated with to outer priority.
The invention will be further described with reference to the accompanying drawings and examples.
As shown in Figure 2, the back side spacing printing back of the body of the present invention in an insulated substrate 1 with transverse direction and longitudinal direction line of weakness
Face electrode 2, then, then after the front surface of insulated substrate 1 makes front surface A gPd electrodes 3, sintering between front surface A gPd electrodes 3,
Use snakelike screen painting resistive layer 4 using high pressure resistant slurry, it is sintered after the first protective layer for being made again in the upside of resistive layer 4
5, after radium-shine adjustment resistance, the second protective layer 6 and character code sign are republished, then again by folding bar, sputtering, folding grain, plating
And after inspection bag technological process, it is fabricated to finished product resistance.
In foregoing, two layers of front surface A gPd electrodes 3 are continuously made in the front surface of insulated substrate 1.
The voltage endurance of the high-tension resistive made using present invention process method is 2.5 times to 15 times of conventional, electric-resistance, together
When there is relatively low cost and preferable voltage coefficient, high voltage index and excellent voltage coefficient index make the product extensive
Applied in power network high voltage control and high-voltage power-supply unit, while being also applied in other high-voltage products, excellent high pressure characteristics
Make the product that there is good market to apply and promotional value.
Embodiment 1：Manufacture method includes following process：
A. as shown in figure 3, the carrier of manufacture high-voltage resistor is insulated substrate 1, in the front and back of large stretch of insulated substrate 1
Clathrate is formed by horizontal folding bar line and vertical folding grain line.
B. as shown in figure 4, silver paste is printed on into the back side of insulated substrate 1, printing position set by way of silk-screen printing
In on horizontal folding bar line, and it is dried and burns till, forms backplate 2.
C. as shown in figure 5, silver paste is printed on into the front of insulated substrate 1, printing position set by way of silk-screen printing
In on horizontal folding bar line, and it is dried and burns till, forms front electrode 3.
D. silver paste is printed on the front of insulated substrate 1 by way of silk-screen printing, secondary printing position is located at laterally
Folding bar line on, and be dried and burn till, form front electrode 3.
E. as shown in fig. 6, slurry is printed on into the front of insulated substrate 1 by way of silk-screen printing, printing position is located at
Horizontal folding bar line is dried and burnt till with vertical folding grain line grid and be connected front electrode 3, the snakelike resistive layer 4 of formation.
F. as shown in fig. 7, silver-colored palladium slurry is printed on into the front of insulated substrate 1 by way of silk-screen printing, medium slurry is used
Material gets up the snakelike complete mask protection of resistive layer 4, and is dried, and forms the first protective layer 5 of a mask.
G. as shown in figure 8, above resistive layer 4, forming radium-shine tangent line by laser and carrying out accurate resistance trimming, make resistance value
Reach setting.
H. as shown in figure 9, resin slurry is printed on above resistive layer 4 by way of silk-screen printing, and it is completely covered
Resistive layer 4, is then dried, sinters, and forms the second protective layer 6.
I. as shown in Figure 10, in the way of silk-screen printing, on above-mentioned second protective layer 6, printing character code sign, then
It is dried, and is sintered together with the second protective layer 6.
J. as shown in figure 11, sequentially will along each longitudinal folding bar line by above-mentioned large stretch of insulated substrate 1 using special equipment
Substrate is converted into strip substrate.
K. as shown in figure 11, strip substrate side surfaces are sputtered using vacuum sputtering machines, forms side electrode 9, connection
Front surface A gPd electrodes 3 and backplate 2.
L. as shown in figure 12, strip-shaped product is sequentially converted into granular production by above-mentioned strip-shaped product along each horizontal folding grain line
Product.
M. as shown in figure 12, by the high-voltage resistor unit of above-mentioned pelletized product individual by barrel plating mode, it is above-mentioned just
Metallic nickel and tin are electroplated on face AgPd electrodes 3, backplate 2 and side electrode 9, nickel electrodeposited coating 7 and tin electrodeposited coating 8 is formed.
Claims (4)
1. thick film high pressure patch resistor, it is characterised in that in the back of the body of an insulated substrate (1) with transverse direction and longitudinal direction line of weakness
Interplanar distance printed back electrode (2), then, then in insulated substrate (1) front surface makes front surface A gPd electrodes (3), after sintering
Between front surface A gPd electrodes (3), using high pressure resistant slurry use snakelike screen painting resistive layer (4), it is sintered after again in resistance
The first protective layer (5) that layer (4) uper side surface makes, after radium-shine adjustment resistance, republishes the second protective layer (6) and character code mark
Show, be then fabricated to finished product resistance after folding bar, sputtering, folding grain, plating and inspection bag technological process again.
2. thick film high pressure patch resistor manufacture method as claimed in claim 1, it is characterised in that insulated substrate (1) back side
There is backplate (2) at two ends respectively, and there are front surface A gPd electrodes (3) at insulated substrate (1) front two ends respectively, in two ends front surface A gPd
There is resistive layer (4) between electrode (3), successively have the first protective layer (5) and the second protective layer from inside to outside on the upside of resistive layer (4)
(6), there are side electrode (9), side electrode (9) respectively in the end side surface of insulated substrate (1) two while connecting the back side with one end
Electrode (2) and front surface A gPd electrodes (3), on the outside of side electrode (9), backplate (2) and front surface A gPd electrodes (3) by it is inner to
Outer priority is coated with nickel electrodeposited coating (7) and tin electrodeposited coating (8).
3. thick film high pressure patch resistor manufacture method as claimed in claim 1, it is characterised in that in insulated substrate (1) just
Surface continuously makes two layers of front surface A gPd electrodes (3).
4. thick film high pressure patch resistor as claimed in claim 1 and its manufacture method, it is characterised in that manufacture method includes
Following process：
A. the carrier of manufacture high-voltage resistor is insulated substrate (1), in the front and back of large stretch of insulated substrate (1) by horizontal folding
Bar line and vertical folding grain line formation clathrate；
B. silver paste is printed on the back side of insulated substrate 1 by way of silk-screen printing, printing position is located at horizontal folding bar line
On, and be dried and burn till, form backplate (2)；
C. silver paste is printed on the front of insulated substrate 1 by way of silk-screen printing, printing position is located at horizontal folding bar line
On, and be dried and burn till, form front electrode (3)；
D. silver paste is printed on the front of insulated substrate 1 by way of silk-screen printing, secondary printing position is located at horizontal folding
On bar line, and it is dried and burns till, forms front electrode (3)；
E. slurry is printed on insulated substrate (1) front by way of silk-screen printing, printing position be located at horizontal folding bar line with
Vertical folding grain line grid is interior and connects front electrode 3, is dried and burns till, forms snakelike resistive layer (4)；
F. silver-colored palladium slurry is printed on the front of insulated substrate 1 by way of silk-screen printing, with dielectric paste by snakelike resistance
4 complete mask protection of layer get up, and are dried, and form the first protective layer (5) of a mask；
G. above resistive layer (4), radium-shine tangent line is formed by laser and carries out accurate resistance trimming, resistance value is reached setting；
H. resin slurry is printed on above resistive layer 4 by way of silk-screen printing, and resistive layer (4) is completely covered, then
It is dried, sinters, forms the second protective layer (6)；
I. in the way of silk-screen printing, in above-mentioned second protective layer (6) above, then printing character code sign is dried, and with
Second protective layer (6) is sintered together；
J. substrate is sequentially converted into strip substrate by above-mentioned large stretch of insulated substrate (1) along each longitudinal folding bar line；
K. strip substrate side surfaces are sputtered using vacuum sputtering machines, forms side electrode 9, connection front surface A gPd electrodes (3)
With backplate (2)；
L. strip-shaped product is sequentially converted into pelletized product by above-mentioned strip-shaped product along each horizontal folding grain line；
M. by the high-voltage resistor unit individual of above-mentioned pelletized product by barrel plating mode, in above-mentioned front surface A gPd electrodes (3), the back of the body
Metallic nickel and tin are electroplated on face electrode (2) and side electrode (9), nickel electrodeposited coating (7) and tin electrodeposited coating (8) is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710448970.1A CN107180690A (en) | 2017-06-14 | 2017-06-14 | Thick film high pressure patch resistor and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710448970.1A CN107180690A (en) | 2017-06-14 | 2017-06-14 | Thick film high pressure patch resistor and its manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107180690A true CN107180690A (en) | 2017-09-19 |
Family
ID=59835379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201710448970.1A Pending CN107180690A (en) | 2017-06-14 | 2017-06-14 | Thick film high pressure patch resistor and its manufacture method |
Country Status (1)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108981506A (en) * | 2018-07-26 | 2018-12-11 | 北京机械设备研究所 | A kind of miniature surface-mount type firing resistor and preparation method thereof |
| CN109830351A (en) * | 2019-03-29 | 2019-05-31 | 昆山厚声电子工业有限公司 | A kind of patch resistor and its processing method |
| CN112053822A (en) * | 2020-09-04 | 2020-12-08 | 翔声科技（厦门）有限公司 | Manufacturing process of negative temperature coefficient resistor |
| CN113990590A (en) * | 2021-09-15 | 2022-01-28 | 安徽翔胜科技有限公司 | Special resistor for LED lamp strip with high stability |
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| CN103443635A (en) * | 2011-02-25 | 2013-12-11 | Abb股份公司 | Resistive voltage divider with improved phase accuracy |
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-
2017
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|---|---|---|---|---|
| US5521576A (en) * | 1993-10-06 | 1996-05-28 | Collins; Franklyn M. | Fine-line thick film resistors and resistor networks and method of making same |
| JP2003068505A (en) * | 2001-08-30 | 2003-03-07 | Koa Corp | Chip resistor and method for manufacturing the same |
| TW200917287A (en) * | 2007-10-05 | 2009-04-16 | Ever Ohms Technology Co Ltd | Manufacturing process of chip resistance |
| CN103443635A (en) * | 2011-02-25 | 2013-12-11 | Abb股份公司 | Resistive voltage divider with improved phase accuracy |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108981506A (en) * | 2018-07-26 | 2018-12-11 | 北京机械设备研究所 | A kind of miniature surface-mount type firing resistor and preparation method thereof |
| CN109830351A (en) * | 2019-03-29 | 2019-05-31 | 昆山厚声电子工业有限公司 | A kind of patch resistor and its processing method |
| CN109830351B (en) * | 2019-03-29 | 2024-05-10 | 昆山厚声电子工业有限公司 | Chip resistor and processing method thereof |
| CN112053822A (en) * | 2020-09-04 | 2020-12-08 | 翔声科技（厦门）有限公司 | Manufacturing process of negative temperature coefficient resistor |
| CN113990590A (en) * | 2021-09-15 | 2022-01-28 | 安徽翔胜科技有限公司 | Special resistor for LED lamp strip with high stability |
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