CN203941772U - Thick film high power low resistance patch resistor - Google Patents
Thick film high power low resistance patch resistor Download PDFInfo
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- CN203941772U CN203941772U CN201420334779.6U CN201420334779U CN203941772U CN 203941772 U CN203941772 U CN 203941772U CN 201420334779 U CN201420334779 U CN 201420334779U CN 203941772 U CN203941772 U CN 203941772U
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Abstract
The utility model discloses a kind of thick film high power low resistance patch resistor, adopt high silver content and necessarily on insulated substrate, make one deck backplate containing the electrode slurry of palladium amount, make continuously again first and second two-layer front electrode, then on the second front electrode, make resistive layer, this front electrode is made up of three relatively independent blocks, this front electrode is the resistance at two series connection and the as far as possible close folding bar line two ends that distribute by resistance cutting, and the resistive layer near folding bar line two ends can be hinted obliquely on the back electrode of resistance completely, make resistance can obtain the shortest heat dissipation path.The another multitool repetition tool setting cutting mode that adopts mean allocation tangential length cuts, make resistance can reach minimum cutting damage, the product that such design and technique are made has high stability, high power, low TCR index and low cost characteristic, has very strong market application and product promotion and is worth.
Description
Technical field
The utility model relates to a kind of thick film high power resistor, especially relates to a kind of thick film high power low resistance patch resistor.
Background technology
Along with scientific and technological progress, the continuous lifting that the development in epoch and people require miniaturization of electronic products, the thick film Chip-R of dependable performance and process stabilizing also answers the characteristic demand of electronic product presenting diversified development trend, as everyone knows, various electronic products are in order to ensure making its steady operation, capital makes a power supply, guarantee the work that it is normal and stable, and the steady operation of every kind of power supply all be unable to do without a kind of low resistance resistance that plays electric current detection effect on feedback circuit that is connected to, this resistance is exactly the current sense resistor that people often say, along with the aggravation of miniaturization of electronic products, the current sense resistor of high power low resistance is more and more subject to pursuing of market.At present; existing common low resistance Chip-R generally includes insulated substrate, back electrode, secondary or three front electrodes, resistive layer, the first protective layer, the second protective layer, character code, side electrode, nickel coating and tin coatings; as shown in figure 18; why power is not high for this product, is mainly because also exist following shortcoming in product design and manufacturing process:
First, resistive layer is near the core of insulated substrate, far away apart from side electrode, and the heat of resistance is often gathered in the centre of resistive layer, the heat of resistance, in the process that electrode and side electrode distribute from the middle to both ends, exists heat dissipation path long and make the bad problem of dispelling the heat.
The second, common low resistance resistance is in the time carrying out radium-shine resistance correction, no matter be adopt hilted broadsword cutting or adopt tool setting cutting, its radium-shine resistance trimming is all larger to the damage of resistive layer, and the resistance to power capability of resistance is reduced.
The 3rd, common low resistance resistance all adopts the length that reduces resistive layer, and the mode that lengthens two end electrodes length is made, and like this, causes the internal resistance of two end electrodes (silver) to strengthen, and make the temperature coefficient of resistance excessive because two end electrodes length strengthens.
In the current industry of high power low resistance current sense resistor, another kind of comparatively general solution is to adopt Alloy Foil by colloid, Alloy Foil to be attached on porcelain substrate, and by the manufacture craft processing of printed substrate, the resistance of this manufacture craft mainly exists material cost high, complex manufacturing technology, the problem that production cost is high and the delivery cycle is long, therefore this also gives stable performance, and the thick film high power low resistance Chip-R of process brings very large market potential.
Summary of the invention
In order to solve the problems of the technologies described above, the utility model proposes a kind of thick film high power low resistance patch resistor, be optimized improvement by the structure and the production technology that normal thick membrance current are detected to resistance, and material is carried out to choose reasonable, can make the power of product get a promotion, can also improve TCR (temperature coefficient) index of current sense resistor simultaneously.Lower cost of manufacture and good resistance characteristic index bring more to this thick film high power current detecting patch resistor and application widely.
The technical solution of the utility model is achieved in that
A kind of thick film high power low resistance patch resistor, comprise a square insulating substrate, along the length direction of described insulated substrate, the two ends place of described insulated substrate lower surface is coated with respectively one deck backplate, between two described backplates, at a distance of setpoint distance, form the first gap; The two ends place of described insulated substrate upper surface and center are coated with respectively one deck the first front electrode, two described first front electrodes at two ends place respectively with described first front electrode of center at a distance of setpoint distance, form two the second gaps; Three described the first front electrode upper surfaces are coated with respectively one deck the second front electrode, on insulated substrate in two described the second gaps, be coated with respectively one deck resistive layer, two described resistive layers extend described the second front electrode that covers center in opposite directions, and two described resistive layers extend a part for described the second front electrode that covers two ends place dorsad; Described resistive layer upper surface is coated with one deck the first protective layer and one deck the second protective layer successively; Described the first protective layer covers described resistive layer completely, and described the second protective layer covers described the first protective layer completely, and described the second protective layer extends and cover a part for described second front electrode at two ends place;
Separately be provided with side electrode, nickel coating and tin coating, described side electrode covers end face, the end face of described the second front electrode at two ends place and the end face of the described backplate at two ends place of described first front electrode at end face, the two ends place at described insulated substrate two ends completely; Described nickel coating covers described the second front electrode, described side electrode and described backplate completely, and described nickel coating is overlapped on the end face of described the second protective layer; Described tin coating covers described nickel coating, and described tin coating is overlapped on the end face of described the second protective layer.
As further improvement of the utility model, along the length direction of described insulated substrate, the length of two described first front electrodes at two ends place is less than the length of described first front electrode of center.
As further improvement of the utility model, described the first front electrode that described the second front electrode is corresponding with it is completely overlapping.
As further improvement of the utility model, along the thickness direction of described insulated substrate, hint obliquely in the described backplate that described insulated substrate lower surface is corresponding wearing downwards respectively in two described the second gaps.
As further improvement of the utility model, between two described second front electrodes and described nickel coating at two ends place, be respectively equipped with one deck the 3rd front electrode between the described resistive layer of center and described first protective layer of center, between two described the 3rd front electrodes at two ends place and described the 3rd front electrode of center at a distance of setpoint distance, form two third spaces, and described the second protective layer extends and covers a part for described the 3rd front electrode at two ends place; Described the second protective layer is coated with one deck the 3rd protective layer outward, and described the 3rd protective layer covers described the second protective layer completely, and described the 3rd protective layer extends and cover a part for described the 3rd front electrode at two ends place; Described nickel coating and described tin coating are overlapped on respectively on the end face of described the 3rd protective layer.
As further improvement of the utility model, along the length direction of described insulated substrate, the length of two described the 3rd front electrodes at two ends place is less than the length of described the 3rd front electrode of center, and two described the second gaps symmetrical hinting obliquely on two described third spaces of correspondence upwards respectively.
As further improvement of the utility model, two described resistive layers at two ends place are to be adjusted to by laser the resistive layer of setting resistance, and the outer part of described the 3rd protective layer is coated with one deck character code label layer.
The beneficial effects of the utility model are: the utility model provides a kind of thick film high power low resistance patch resistor, compared with thick film common power low resistance patch resistor in prior art, the utility model thick film high power low resistance Chip-R can reach following beneficial effect:
1, by forming two-layer front electrode at insulated substrate upper surface, i.e. the first front electrode and the second front electrode, every layer of front electrode by be positioned at insulated substrate two ends place and center three independently block form, first of two ends place, first of the second front electrode and center, between the second front electrode, form the second gap, in two the second gaps, form resistive layer, preferably, the length of the front electrode at two ends place is less than the length of the front electrode of center, the benefit of doing is like this make that the front electrode at two ends place tries one's best short, the length that the front electrode of middle is tried one's best, thereby make the two ends of the close insulated substrate that the resistive layer that is positioned at the second gap tries one's best, therefore, the heat generating spot of the resistive layer of patch resistor can be moved on to the two ends of insulated substrate from the centre of insulated substrate, solve and make the patch resistor bad problem of dispelling the heat because heat dissipation path is long, to reach the object that promotes patch resistor power.
2, by form resistive layer in two the second gaps relatively pulling open setpoint distance, resistive layer covers on the second front electrode of center completely and jumps on second front electrode at two ends place, compared with common low resistance patch resistor, resistive layer has greatly been lengthened, front electrode has greatly been shortened, therefore, can reduce the impact of front electrode internal resistance on patch resistor temperature coefficient (TCR) index, greatly improve and promoted the index temperature coefficient of resistance.
3, the front electrode of patch resistor comprises first, second, third front electrode at two ends place, they are by three layers of stacked formation of the material that prints electrode, the front electrode of this layering setting can reduce the impedance of front electrode greatly, thereby reach the heat-sinking capability that promotes patch resistor, improve and promoted the index temperature coefficient object of patch resistor.
4, first of center, the second front electrode is formed at the below of resistive layer, the 3rd front electrode of center is formed at the top of resistive layer, three layers of front electrode (first front electrode of three independent blocks compositions, the second front electrode and the 3rd front electrode) be resistance two series connection and that distribute as far as possible close two ends by resistive layer cutting, in the time that patch resistor is carried out to radium-shine resistance trimming, can carry out subtend cutting by the mode that multitool repeats to the resistance of these two series connection respectively, like this, can relatively reduce the damage to resistive layer, promote the resistance to power characteristic of resistive layer.
5, by the resistive layer in the second gap being mapped in backplate corresponding on insulated substrate lower surface, can reach and greatly improve heat dissipation path and radiating condition, guarantee the object of the further lifting of patch resistor power, its principle is, resistive layer is if be mapped in backplate, will corresponding lengthening backplate length in the longitudinal direction, like this, by the backplate that lengthens can be rapidly by the dissipation of heat of resistive layer to pcb board.
6, three layers of front electrode (the first front electrode, the second front electrode and the 3rd front electrode) material and backplate material are all selected and are had certain silver-colored palladium slurry containing palladium amount and high silver content, like this, can guarantee reliability and the stability that patch resistor is worked under high temperature, high humidity environment.
Brief description of the drawings
Fig. 1 is the insulated substrate schematic diagram after step a described in the utility model;
Fig. 2 is the insulated substrate lower surface schematic diagram after step b described in the utility model;
Fig. 3 is the insulated substrate upper surface schematic diagram after step c described in the utility model;
Fig. 4 is the insulated substrate upper surface schematic diagram after steps d described in the utility model;
Fig. 5 is the insulated substrate schematic diagram after step e described in the utility model;
Fig. 6 is the insulated substrate schematic diagram after step f described in the utility model;
Fig. 7 is the insulated substrate schematic diagram after step g described in the utility model;
Fig. 8 is the insulated substrate schematic diagram after step h described in the utility model;
Fig. 9 is the insulated substrate schematic diagram after step I described in the utility model;
Figure 10 is the insulated substrate schematic diagram after step j described in the utility model;
Figure 11 is the insulated substrate schematic diagram after step k described in the utility model;
Figure 12 is the insulated substrate schematic diagram after step l described in the utility model;
Figure 13 is the granular semi-finished product schematic diagram after step m described in the utility model;
Figure 14 is the granular semi-finished product schematic diagram after step m described in the utility model;
Figure 15 is the granular semi-finished product schematic diagram after step o described in the utility model;
Figure 16 is the utility model embodiment 1 cross-sectional view;
Figure 17 is the utility model embodiment 2 cross-sectional view;
Figure 18 is the signal of the common low resistance patch resistor of prior art cross-section structure.
By reference to the accompanying drawings, make the following instructions:
10-insulated substrate 11-folding grain line
12-folding bar line, 21-upper surface
22-the first front electrode the 23-the second front electrode
24-resistive layer the 25-the three front electrode
The 26-the first protective layer 27-radium-shine tangent line
28-the second protective layer the 29-the three protective layer
30-label layer, 31-lower surface
32-backplate, 33-side electrode
40-nickel coating, 50-tin coating
Embodiment
Embodiment 1
As shown in figure 16, a kind of thick film high power low resistance patch resistor, comprise a square insulating substrate 10, along the length direction of described insulated substrate, the two ends place of described insulated substrate lower surface 31 is coated with respectively one deck backplate 32, between two described backplates, at a distance of setpoint distance, form the first gap; The two ends place of described insulated substrate upper surface 21 and center are coated with respectively one deck the first front electrode 22, two described first front electrodes at two ends place respectively with described first front electrode of center at a distance of setpoint distance, form two the second gaps; Three described the first front electrodes are coated with respectively one deck the second front electrode 23 outward, on insulated substrate in two described the second gaps, be coated with respectively one deck resistive layer 24, two described resistive layers extend described the second front electrode that covers center in opposite directions, and two described resistive layers extend a part for described the second front electrode that covers two ends place dorsad; Described resistive layer is coated with one deck the first protective layer 26 and one deck the second protective layer 28 outward successively; Described the first protective layer covers described resistive layer completely, and described the second protective layer covers described the first protective layer completely, and described the second protective layer extends and cover a part for described second front electrode at two ends place;
Separately be provided with side electrode 33, nickel coating 40 and tin coating 50, described side electrode covers end face, the end face of described the second front electrode at two ends place and the end face of the described backplate at two ends place of described first front electrode at end face, the two ends place at described insulated substrate two ends completely; Described nickel coating covers described the second front electrode, described side electrode and described backplate completely, and described nickel coating is overlapped on the end face of described the second protective layer; Described tin coating covers described nickel coating, and described tin coating is overlapped on the end face of described the second protective layer.Compared with thick film common power low resistance patch resistor in prior art, in the utility model said structure by forming two-layer front electrode at insulated substrate upper surface, i.e. the first front electrode and the second front electrode, every layer of front electrode by be positioned at insulated substrate two ends place and center three independently block form, first of two ends place, first of the second front electrode and center, between the second front electrode, form the second gap, in two the second gaps, form resistive layer, like this, the heat generating spot of the resistive layer of patch resistor can be moved on to the two ends of insulated substrate from the centre of insulated substrate, solve and make the patch resistor bad problem of dispelling the heat because heat dissipation path is long, to reach the object that promotes patch resistor power.In addition, by form resistive layer in two the second gaps relatively pulling open setpoint distance, resistive layer covers on the second front electrode of center completely and jumps on second front electrode at two ends place, compared with common low resistance patch resistor, resistive layer has greatly been lengthened, front electrode has greatly been shortened, therefore, can reduce the impact of front electrode internal resistance on patch resistor temperature coefficient (TCR) index, greatly improve and promoted the index temperature coefficient of resistance.
Preferably, along the length direction of described insulated substrate, the length of two described first front electrodes at two ends place is less than the length of described first front electrode of center. and the benefit of doing is like this make that the front electrode at two ends place tries one's best short, the length that the front electrode of middle is tried one's best, thereby make the two ends of the close insulated substrate that the resistive layer that is positioned at the second gap tries one's best, further shorten heat dissipation path, improve the heat-sinking capability of patch resistor.
Preferably, described the first front electrode that described the second front electrode is corresponding with it is completely overlapping.The front electrode of this layering setting can reduce the impedance of front electrode greatly, thereby reaches the heat-sinking capability that promotes patch resistor, improves and promoted the index temperature coefficient object of patch resistor.
Preferably, along the thickness direction of described insulated substrate, hint obliquely in the described backplate that described insulated substrate lower surface is corresponding wearing downwards respectively in two described the second gaps.Like this, can reach and greatly improve heat dissipation path and radiating condition, guarantee the object of the further lifting of patch resistor power, its principle is, resistive layer is if be mapped in backplate, will corresponding lengthening backplate length in the longitudinal direction, like this, by the backplate that lengthens can be rapidly by the dissipation of heat of resistive layer to pcb board.
Embodiment 2
As shown in figure 17, the present embodiment 2 comprises all technical characteristic in embodiment 1, its difference is: between two described second front electrodes and described nickel coating at two ends place, be respectively equipped with one deck the 3rd front electrode 25 between the described resistive layer of center and described first protective layer of center, between two described the 3rd front electrodes at two ends place and described the 3rd front electrode of center at a distance of setpoint distance, form two third spaces, and described the second protective layer extends and covers a part for described the 3rd front electrode at two ends place; Described the second protective layer is coated with one deck the 3rd protective layer 29 outward, and described the 3rd protective layer covers described the second protective layer completely, and described the 3rd protective layer extends and cover a part for described the 3rd front electrode at two ends place; Described nickel coating and described tin coating are overlapped on respectively on the end face of described the 3rd protective layer.In said structure, the front electrode of patch resistor comprises first, second, third front electrode at two ends place, they are by three layers of stacked formation of the material that prints electrode, the front electrode of this layering setting can reduce the impedance of front electrode greatly, thereby reach the heat-sinking capability that promotes patch resistor, improve and promoted the index temperature coefficient object of patch resistor.In said structure, first of center, the second front electrode is formed at the below of resistive layer, the 3rd front electrode of center is formed at the top of resistive layer, three layers of front electrode (first front electrode of three independent blocks compositions, the second front electrode and the 3rd front electrode) be resistance two series connection and that distribute as far as possible close two ends by resistive layer cutting, in the time that patch resistor is carried out to radium-shine resistance trimming, can carry out subtend cutting by the mode that multitool repeats to the resistance of these two series connection respectively, like this, can relatively reduce the damage to resistive layer, promote the resistance to power characteristic of resistive layer.
Preferably, along the length direction of described insulated substrate, the length of two described the 3rd front electrodes at two ends place is less than the length of described the 3rd front electrode of center, and two described the second gaps symmetrical hinting obliquely on two described third spaces of correspondence upwards respectively.Like this, the 3rd front electrode of two ends place and center is shorter than the length of first, second front electrode respectively, can reduce printing position deviation and bring the bad impact of quality.
Preferably, two described resistive layers at two ends place are to be adjusted to by laser the resistive layer of setting resistance, and the outer part of described the second protective layer is coated with one deck character code label layer 30.In said structure, first of center, the second front electrode is formed at the below of resistive layer, the 3rd front electrode of center is formed at the top of resistive layer, three layers of front electrode (first front electrode of three independent blocks compositions, the second front electrode and the 3rd front electrode) be resistance two series connection and that distribute as far as possible close two ends by resistive layer cutting, in the time that patch resistor is carried out to radium-shine resistance trimming, can carry out subtend cutting by the mode that multitool repeats to the resistance of these two series connection respectively, like this, can relatively reduce the damage to resistive layer, promote the resistance to power characteristic of resistive layer.
The manufacture method of a kind of thick film high power of the utility model low resistance patch resistor, comprises the steps:
A, as shown in Figure 1, prepare a sheet of insulated substrate 10, at upper surface 21 and evenly folding bar line 12 and the some folding grain lines 11 along its length of some broad wayss of formation of lower surface 31 of described insulated substrate, described folding bar line and described folding grain line intersect to form clathrate, the corresponding final thick film high power low resistance patch resistor of manufacturing of each grid.
B, as shown in Figure 2, taking every folding bar line as symmetry axis, at the folding bar line place of described insulated substrate lower surface, by the symmetrical printing of mode one deck silver palladium slurry of silk screen printing, is then dried, and forms backplate 32; Wherein, taking each grid as unit, between two described backplates at two ends place, at a distance of setpoint distance, form the first gap; Like this, the backplate of printing is positioned at the folding bar line place of Width, and is symmetry shape.
C, as shown in Figure 3, taking every folding bar line as symmetry axis, at the folding bar line place of described insulated substrate upper surface, by the symmetrical printing of the mode ground floor silver palladium slurry of silk screen printing, and at the center of each grid printing ground floor silver palladium slurry, be then dried, form the first front electrode 22; Wherein, taking each grid as unit, two described first front electrodes at two ends place respectively and between described first front electrode of center at a distance of setpoint distance, form two the second gaps, and these two described the second gaps are hinted obliquely in the backplate that insulated substrate lower surface is corresponding in vertical direction downwards to wearing; The first front electrode that two described first front electrodes at two ends place length is along its length less than respectively center length along its length; In said structure, taking each grid as unit, the first front electrode by three independently block formed, two first front electrodes at two ends place and first front electrode of center, and the second gap between first front electrode at two ends place and the first front electrode of center is as far as possible near folding bar line.
D, as shown in Figure 4, by the symmetrical printing of the mode second layer silver palladium slurry of silk screen printing, is then dried and sintering formation the second front electrode 23 on described the first front electrode surface; Wherein, described the second front electrode and described the first front electrode are completely overlapping; Like this, the second front electrode also by three independently block formed, and gap between three blocks is also as far as possible near folding bar line, this gap is in vertical direction downwards also to wearing in the backplate of hinting obliquely at insulated substrate lower surface.
E, as shown in Figure 5, taking each grid as unit, on insulated substrate in two described the second gaps by the mode printed resistor slurry of silk screen printing, in two described the second gaps, the resistance slurry of printing extends and covers completely described second front electrode of center in opposite directions, and the resistance slurry printing two described the second gaps an in part of extending dorsad described the second front electrode that covers two ends place; Then be dried and sintering, form resistive layer 24; Like this, resistive layer is positioned at inner point of the second gap and forms the resistance of two series connection, and is symmetrically distributed between two adjacent folding bar lines.
F, as shown in Figure 6, taking each grid as unit, on the surface of the center of the surface of described second front electrode at two ends place and therebetween resistive layer, print a silver medal palladium slurry by the mode of silk screen printing, be then dried and sintering, form the 3rd front electrode 25; Wherein, between two described the 3rd front electrodes at two ends place and described the 3rd front electrode of center, at a distance of setpoint distance, forms two third spaces, two described the second gaps in vertical direction upwards symmetry hint obliquely on corresponding third space.Like this, the profile of the 3rd front electrode is similar to first and second front electrode, also formed by three independent blocks, the spacing just forming between three independent blocks is larger than the spacing between first and second front electrode, and can symmetrical hint obliquely on the gap between first and second front electrode.
G, as shown in Figure 7, taking each grid as unit, described the 3rd front electrode in described resistive layer surface and center is surperficial by the mode printed glass slurry of silk screen printing, and the ground floor glass paste of printing extends a part for described the 3rd front electrode that covers two ends place to two ends, then be dried and sintering, form the first protective layer 26; Like this, the first protective layer covers resistive layer completely, plays the effect of protective resistance layer.
H, as shown in Figure 8, taking each grid as unit, adopt radium-shine laser tool setting cutting mode, through described the first protective layer, on two described resistive layers in two described the second gaps, carry out respectively multitool and repeat radium-shine laser cutting, form radium-shine tangent line 27, the resistance value of adjusting described resistive layer reaches needed resistance; Like this, can realize the accurate adjustment of resistive layer resistance value, meet the actual needs of resistor.
I, as shown in Figure 9, taking each grid as unit, print ground floor resin slurry at described the first protective layer by the mode of silk screen printing, then be dried, form the second protective layer 28, wherein, described the second protective layer covers described the first protective layer completely, and described the second protective layer extends and cover a part for described second front electrode at two ends place along its length, described the second protective layer broad ways extends to folding grain line place; Like this, the second protective layer covers the first protective layer completely, plays the effect of further protective resistance layer.
J, as shown in figure 10, taking each grid as unit, prints second layer resin slurry at described the second protective layer by the mode of silk screen printing, after being dried, at surface printing one deck marking materials of second layer resin slurry, after being dried, then carry out sintering again; Second layer resin slurry forms the 3rd protective layer 29, and marking materials forms character code label layer 30, and described the 3rd protective layer and the second protective layer are completely overlapping; Like this, the 3rd protective layer covers the second protective layer completely, plays the effect of further protective resistance layer.Label layer plays the effect of mark product.
K, as shown in figure 11, is sequentially converted into strip semi-finished product along every folding bar line of described insulated substrate by the insulated substrate after step a～j;
L, as shown in figure 12, sputter is carried out in the side that adopts vacuum sputtering machine to form described strip semi-finished product folding bar, form side electrode 33, described side electrode extension covers the end face of the end face of described the first front electrode, described the second front electrode, described the 3rd end face of front electrode and the end face of described backplate; Side electrode plays the effect that is communicated with the first front electrode, the second front electrode, the 3rd front electrode and backplate.
M, as shown in figure 13, is sequentially converted into granular semi-finished product along an every folding grain line on described strip semi-finished product by the strip semi-finished product after step a～l;
N, as shown in figure 14, in described granular half-finished the 3rd front electrode, side electrode and backplate, adopt barrel plating mode to electroplate layer of metal nickel, form nickel coating 40, described nickel coating covers described the 3rd layer of front electrode, described side electrode and described backplate completely, and described nickel coating is overlapped on two end faces of the 3rd protective layer;
O, as shown in figure 15; adopt barrel plating mode to electroplate layer of metal tin on the surface of described nickel coating; form one deck tin coating 50; described tin coating covers described nickel coating completely; and described tin coating is overlapped on two end faces of described the 3rd protective layer, form the utility model thick film high power low resistance patch resistor.
To sum up, the thick film high power low resistance patch resistor of the utility model made, adopt high silver content and necessarily on an insulated substrate, make one deck backplate containing the electrode slurry of palladium amount, make continuously more two-layer front electrode (first, the second front electrode), then on the second front electrode, make resistive layer, this front electrode (first, the second front electrode) formed by three relatively independent blocks, this front electrode (first, the second front electrode) be the resistance at two series connection and the as far as possible close folding bar line two ends that distribute by resistance cutting, and the resistive layer near folding bar line two ends can be hinted obliquely in the backplate of resistance completely, to obtain the shortest heat dissipation path, resistive layer covers the front electrode of center completely and jumps on the front electrode at two ends place simultaneously, make again one the 3rd front electrode, and obtain high-power patch resistor.
Because the utility model is to be optimized and to improve bring to power and promote temperature coefficient (TCR) index from material, structure and the production technology of patch resistor, but not replace or coated front electrode with metal material.Therefore, the utility model can reduce the production cost of thick film high power low resistance patch resistor greatly, can be widely applied in each electronic product.
The utility model thick film high power low resistance patch resistor can be used as in the making that current sense resistor is widely used in power supply.
Above embodiment is with reference to accompanying drawing, and preferred embodiment of the present utility model is elaborated.Those skilled in the art is by above-described embodiment being carried out to amendment or the change on various forms, but do not deviate from the situation of essence of the present utility model, within all dropping on protection range of the present utility model.
Claims (7)
1. a thick film high power low resistance patch resistor, it is characterized in that: comprise a square insulating substrate (10), along the length direction of described insulated substrate, the two ends place of described insulated substrate lower surface (31) is coated with respectively one deck backplate (32), between two described backplates, at a distance of setpoint distance, form the first gap; The two ends place of described insulated substrate upper surface (21) and center are coated with respectively one deck the first front electrode (22), two described first front electrodes at two ends place respectively with described first front electrode of center at a distance of setpoint distance, form two the second gaps; Three described the first front electrode upper surfaces are coated with respectively one deck the second front electrode (23), on insulated substrate in two described the second gaps, be coated with respectively one deck resistive layer (24), two described resistive layers extend described the second front electrode that covers center in opposite directions, and two described resistive layers extend a part for described the second front electrode that covers two ends place dorsad; Described resistive layer upper surface is coated with one deck the first protective layer (26) and one deck the second protective layer (28) successively; Described the first protective layer covers described resistive layer completely, and described the second protective layer covers described the first protective layer completely, and described the second protective layer extends and cover a part for described second front electrode at two ends place;
Separately be provided with side electrode (33), nickel coating (40) and tin coating (50), described side electrode covers end face, the end face of described the second front electrode at two ends place and the end face of the described backplate at two ends place of described first front electrode at end face, the two ends place at described insulated substrate two ends completely; Described nickel coating covers described the second front electrode, described side electrode and described backplate completely, and described nickel coating is overlapped on the end face of described the second protective layer; Described tin coating covers described nickel coating, and described tin coating is overlapped on the end face of described the second protective layer.
2. thick film high power low resistance patch resistor according to claim 1, is characterized in that: along the length direction of described insulated substrate, the length of two described first front electrodes at two ends place is less than the length of described first front electrode of center.
3. thick film high power low resistance patch resistor according to claim 2, is characterized in that: described the first front electrode that described the second front electrode is corresponding with it is completely overlapping.
4. thick film high power low resistance patch resistor according to claim 3, is characterized in that: along the thickness direction of described insulated substrate, hint obliquely in the described backplate that described insulated substrate lower surface is corresponding wearing downwards respectively in two described the second gaps.
5. thick film high power low resistance patch resistor according to claim 4, it is characterized in that: between two described second front electrodes and described nickel coating at two ends place, be respectively equipped with one deck the 3rd front electrode (25) between the described resistive layer of center and described first protective layer of center, between two described the 3rd front electrodes at two ends place and described the 3rd front electrode of center at a distance of setpoint distance, form two third spaces, and described the second protective layer extends and covers a part for described the 3rd front electrode at two ends place; Described the second protective layer is coated with one deck the 3rd protective layer (29) outward, and described the 3rd protective layer covers described the second protective layer completely, and described the 3rd protective layer extends and cover a part for described the 3rd front electrode at two ends place; Described nickel coating and described tin coating are overlapped on respectively on the end face of described the 3rd protective layer.
6. thick film high power low resistance patch resistor according to claim 5, it is characterized in that: along the length direction of described insulated substrate, the length of two described the 3rd front electrodes at two ends place is less than the length of described the 3rd front electrode of center, and two described the second gaps symmetrical hinting obliquely on two described third spaces of correspondence upwards respectively.
7. thick film high power low resistance patch resistor according to claim 6; it is characterized in that: two described resistive layers at two ends place are to be adjusted to by laser the resistive layer of setting resistance, the outer part of described the 3rd protective layer is coated with one deck character code label layer (30).
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| CN201420334779.6U CN203941772U (en) | 2014-06-20 | 2014-06-20 | Thick film high power low resistance patch resistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420334779.6U CN203941772U (en) | 2014-06-20 | 2014-06-20 | Thick film high power low resistance patch resistor |
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| CN203941772U true CN203941772U (en) | 2014-11-12 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304241A (en) * | 2014-06-20 | 2016-02-03 | 昆山厚声电子工业有限公司 | Thick-film patch resistor with high power and low resistance value and manufacturing method of thick-film patch resistor |
| CN107146666A (en) * | 2017-05-22 | 2017-09-08 | 丽智电子(昆山)有限公司 | A kind of high-density and superminiature thick film Chip-R and its manufacture method |
| CN107230539A (en) * | 2016-03-25 | 2017-10-03 | 昆山厚声电子工业有限公司 | Flat electrode arrangement resistor and its manufacture craft |
| CN109416964A (en) * | 2016-09-27 | 2019-03-01 | 松下知识产权经营株式会社 | Chip resister |
| CN116072362A (en) * | 2021-11-02 | 2023-05-05 | 乾坤科技股份有限公司 | Chip resistor structure |
-
2014
- 2014-06-20 CN CN201420334779.6U patent/CN203941772U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304241A (en) * | 2014-06-20 | 2016-02-03 | 昆山厚声电子工业有限公司 | Thick-film patch resistor with high power and low resistance value and manufacturing method of thick-film patch resistor |
| CN105304241B (en) * | 2014-06-20 | 2017-11-17 | 昆山厚声电子工业有限公司 | Thick film high power low resistance patch resistor and its manufacture method |
| CN107230539A (en) * | 2016-03-25 | 2017-10-03 | 昆山厚声电子工业有限公司 | Flat electrode arrangement resistor and its manufacture craft |
| CN109416964A (en) * | 2016-09-27 | 2019-03-01 | 松下知识产权经营株式会社 | Chip resister |
| CN109416964B (en) * | 2016-09-27 | 2021-04-23 | 松下知识产权经营株式会社 | Chip resistor |
| CN107146666A (en) * | 2017-05-22 | 2017-09-08 | 丽智电子(昆山)有限公司 | A kind of high-density and superminiature thick film Chip-R and its manufacture method |
| CN116072362A (en) * | 2021-11-02 | 2023-05-05 | 乾坤科技股份有限公司 | Chip resistor structure |
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Granted publication date: 20141112 Effective date of abandoning: 20171117 |