CN107146666A - A kind of high-density and superminiature thick film Chip-R and its manufacture method - Google Patents
A kind of high-density and superminiature thick film Chip-R and its manufacture method Download PDFInfo
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- CN107146666A CN107146666A CN201710363197.9A CN201710363197A CN107146666A CN 107146666 A CN107146666 A CN 107146666A CN 201710363197 A CN201710363197 A CN 201710363197A CN 107146666 A CN107146666 A CN 107146666A
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- ceramic substrate
- thick film
- front electrode
- resistance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
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Abstract
The invention discloses a kind of high-density and superminiature thick film Chip-R and its manufacture method, resistance includes ceramic substrate, the long side of the back side two of ceramic substrate is provided with folding bar line, the positive two short sides side of ceramic substrate is provided with folding grain line, the perpendicular setting in space of folding bar line and folding grain line, the back up of ceramic substrate has backplate, the inner side that grain line is rolled on the front of ceramic substrate is symmetrically printed with the first front electrode, resistance resistance body is printed between the front electrode of two panels first, the upper surface of resistance resistance body is provided with the first protective layer, radium tangent line is provided with resistance resistance body and the first protective layer, the upper surface of the front electrode of two panels first is additionally provided with the second front electrode, the upper surface of radium tangent line is provided with the second protective layer, two sides positioned at the ceramic substrate of the first front electrode both sides are respectively arranged with side electrode.The present invention is simple in construction, easy to use, with high density, super-small, and relatively low cost of manufacture, has a good application prospect.
Description
Technical field
The present invention relates to technical field of electronic components, and in particular to a kind of high-density and superminiature thick film Chip-R and its
Manufacture method.
Background technology
With the development of science and technology the requirement of the development and people in epoch to each electronic product is constantly lifted, in recent years, disappear
The person of expense promotes each electron-like to produce the continuous demand of microminiature, high-performance, multi-functional, portability and wearable electronic product
Product are intended to " light ", " thin ", " short ", the direction of " small " and developed rapidly, so that high-density and superminiature thick film Chip-R（Type
Number be 01005）It is able to popularization and application.
At present, the application of high-density and superminiature thick film Chip-R is more and more wider, and challenge is brought to equipment and technique, because
More sensitive to various parameters for high-density and superminiature thick film Chip-R, tiny change may cause the shadow of highly significant
Ring, only perfectly combination could obtain sane packaging technology and high-quality highly dense for material, machine, technique, personnel and environment
Spend microminiature thick film Chip-R.High-density and superminiature thick film Chip-R of the prior art, in manufacturing process, makes essence
Degree is low, and the utilization rate of production material is low, and cost of manufacture is higher, and waste material can have influence to environment, how overcome above-mentioned ask
Topic, is that current urgent need is solved.
The content of the invention
The purpose of the present invention is to overcome existing high-density and superminiature thick film Chip-R, and making precision is low, the profit of production material
Low with rate, cost of manufacture is higher, and waste material can have the problem of influenceing to environment.The high-density and superminiature thick film chip of the present invention
Resistance and its manufacture method, resistance it is simple in construction, it is easy to use, with high density, super-small, and relatively low be fabricated to
This, multiple can make simultaneously, while application demand of the Client application end to high-density and superminiature thick film Chip-R is also met,
Have a good application prospect.
In order to achieve the above object, the technical solution adopted in the present invention is：
A kind of high-density and superminiature thick film Chip-R, it is characterised in that：Including ceramic substrate, the back side two of the ceramic substrate
Long side is provided with folding bar line, and the positive two short sides side of the ceramic substrate is provided with folding grain line, the folding bar line and folding grain line
Perpendicular in space to set, the back up of the ceramic substrate has rolls over grain on backplate, the front of the ceramic substrate
The inner side of line, which is symmetrically printed between the first front electrode, the front electrode of two panels first, is printed with resistance resistance body, the resistance resistance
The upper surface of body is provided with the first protective layer, the resistance resistance body and the first protective layer and is provided with radium tangent line, and two panels first is just
The upper surface of face electrode is additionally provided with the second front electrode, and second front electrode is used to protect corresponding first front electricity
Pole, the upper surface of the radium tangent line is provided with the second protective layer and is covered on the first protective layer, positioned at the first front electrode two
The two sides of the ceramic substrate of side are respectively arranged with side electrode, for the first front electrode and backplate to be turned on.
A kind of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：The ceramic substrate uses aluminum oxide
Material is made.
A kind of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：The backplate, the first front electricity
Pole and the surface of side electrode are coated with nickel dam, and the outer surface of the nickel dam is coated with tin layers.
A kind of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：First front electrode is using silver
Palladium material is made, and second front electrode is made of resin ag material.
A kind of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：The thickness of the nickel dam is 4-15 μm.
A kind of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：The thickness of the tin layers is 5-15 μm.
A kind of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：The printed pattern of the resistance resistance body
Area is 0.020mm2-0.024mm2。
A kind of manufacture method of high-density and superminiature thick film Chip-R, it is characterised in that：Comprise the following steps,
Step（1）, ceramic base plate body is made by material of aluminum oxide, laser cutting mode is used at the back side of ceramic substrate
Quarter is put a plurality of folding bar line of its decile, is carved and put many of its decile using laser cutting mode in the front of ceramic substrate
Bar rolls over grain line, and ceramic base plate body is divided into several pieces ceramic substrate by the perpendicular setting in space of folding bar line and folding grain line；
Step（2）, will carve and be equipped with folding bar line, the ceramic base plate body of folding grain line is cleaned by ultrasonic instrument；
Step（3）, coating silver paste is printed by silk screen thick film screen printing mode at the back side of ceramic base plate body, and be sintered,
So as to form backplate at the back side of each ceramic substrate of ceramic base plate body；
Step（4）, the inner side antimere of grain line is rolled on the front of each ceramic substrate of ceramic base plate body, passes through silk screen thick film
The silver-colored palladium slurry of mode of printing printing coating, and be sintered, so that so as in the positive shape of each ceramic substrate of ceramic base plate body
Into symmetrically arranged first front electrode；
Step（5）, printed and applied between the first front electrode of the positive both sides of each ceramic substrate by silk screen thick film screen printing mode
One layer of resistance body slurry is covered, and is sintered, so as to form resistance resistance body；
Step（6）, in the upper surface of resistance resistance body, one layer of glass paste of coating is printed by silk screen thick film screen printing mode, gone forward side by side
Row sintering, so as to form the first protective layer as protective resistance resistance body；
Step（7）, the mode cut by using laser is modified to resistance resistance body, the resistance that is formed needed for client and
Precision, forms radium tangent line on resistance resistance body and the first protective layer；
Step（8）, in the upper surface of the first front electrode, by screen printing mode printing one layer of resin silver paste of coating, and
It is sintered, so as to form the second front electrode as the first front electrode；
Step（9）, in the upper surface of radium tangent line, by screen printing mode printing one layer of resin slurry of coating, and it is sintered,
So as to form the second protective layer as resistance resistance body, and the second protective layer () and it is covered on the first protective layer；
Step（10）, along every folding bar line of the ceramic base plate body by the ceramic base plate body after step-step process, according to
Sequence is converted into the ceramic substrate strip semi-finished product of strip；
Step（11）, ceramic substrate strip semi-finished product are stacked by way of tool is stacked, to ceramic substrate strip
The two sides of semi-finished product use true nickel plating chromium alloy material mode, form the side for making the first front electrode be turned on backplate
Electrode；
Step（12）, grain line is rolled over by the ceramics after step-step process along every of the ceramic substrate strip semi-finished product
Substrate strip semi-finished product, are sequentially converted into the granular semi-finished product of granular ceramic substrate；
Step（13）, the surface of the backplate of the granular semi-finished product of ceramic substrate, front electrode and side electrode is passed through into barrel plating
Mode electroplates layer of metal nickel, so as to form nickel dam；
Step（14）, then the surface of the nickel dam of the granular semi-finished product of ceramic substrate by barrel plating mode electroplated into layer of metal tin, from
And tin layers are formed, complete the manufacture of high-density and superminiature thick film Chip-R.
The manufacture method of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：The thickness of the nickel dam is
4-15 μm, the thickness of the tin layers is 5-15 μm, and the printed pattern area of the resistance resistance body is 0.020mm2-0.024mm2。
The manufacture method of foregoing high-density and superminiature thick film Chip-R, it is characterised in that：Step（3）In silver paste
Sintering temperature be：850 ± 5 DEG C, step（4）In the sintering temperature of silver-colored palladium slurry be：850 ± 5 DEG C, step（5）Resistance body
Slurry sintering temperature is：850 ± 5 DEG C, step（6）The sintering temperature of middle glass paste is：600 ± 5 DEG C, step（8）In tree
The sintering temperature of Zhi Silver slurries is：200 ± 10 DEG C, step（9）In the sintering temperature of resin slurry be：200±10℃.
The beneficial effects of the invention are as follows：The high-density and superminiature thick film Chip-R and its manufacture method of the present invention, it is highly dense
The manufacture method for spending microminiature thick film Chip-R is different from other elements, is more accurately controlled, and is reply high density, extra small
Type, portable and wearable continuing to develop for smart electronics product scope and it is independent researched and developed, in combination with existing
Some production equipment and production technology, by the adjustment to printed pattern and typography, are finally completed high-density and superminiature thick
The manufacture of film Chip-R, can be applied to high-density printed circuit board assembling field, earphone, audiphone, bluetooth, communication apparatus,
Intelligent watch, mobile phone radio frequency module, micro hard disk, portable memory article（Such as SD card）Deng electronics field, high density surpasses
Small-sized thick film Chip-R it is simple in construction, it is easy to use, can be many with high density, super-small, and relatively low cost of manufacture
Individual resistance makes simultaneously, while also meeting application demand of the Client application end to high-density and superminiature thick film Chip-R, has
There is good application prospect.
Brief description of the drawings
Fig. 1 is the structural representation of the high-density and superminiature thick film Chip-R of the present invention；
The step of Fig. 2 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（1）Ceramic base plate body shows afterwards
It is intended to；
The step of Fig. 3 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（1）Carve the signal of folding bar line
Figure；
The step of Fig. 4 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（1）Carve the signal of folding grain line
Figure；
The step of Fig. 5 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（2）Schematic diagram afterwards；
The step of Fig. 6 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（3）Schematic diagram afterwards；
The step of Fig. 7 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（4）Schematic diagram afterwards；
The step of Fig. 8 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（5）Schematic diagram afterwards；
The step of Fig. 9 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（6）Schematic diagram afterwards；
The step of Figure 10 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（7）Schematic diagram afterwards；
The step of Figure 11 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（8）Schematic diagram afterwards；
The step of Figure 12 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（9）Schematic diagram afterwards；
The step of Figure 13 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（10）Schematic diagram afterwards；
The step of Figure 14 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（11）Schematic diagram afterwards.
The step of Figure 15 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（12）Schematic diagram afterwards；
The step of Figure 16 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（13）Schematic diagram afterwards.
The step of Figure 17 is the manufacture method of the high-density and superminiature thick film Chip-R of the present invention（14）Schematic diagram afterwards.
Embodiment
Below in conjunction with Figure of description, the present invention is further illustrated.
As shown in figure 1, the high-density and superminiature thick film Chip-R of the present invention, including ceramic substrate 01, the ceramic base
The long side of the back side two of plate 01 is provided with folding bar line 02, and the positive two short sides side of the ceramic substrate 01 is provided with folding grain line 03,
The folding bar line 02 and folding grain the line 03 perpendicular setting in space, the back up of the ceramic substrate 01 have backplate
04, the inner side of folding grain line 03 is symmetrically printed with the first front electrode 05, the front of two panels first on the front of the ceramic substrate 01
Resistance resistance body 06 is printed between electrode 05, the upper surface of the resistance resistance body 06 is provided with the first protective layer 07, the resistance
Radium tangent line 08 is provided with the protective layer 07 of resistance body 06 and first, the upper surface of the first front electrode of two panels 05 is additionally provided with second
Front electrode 09, second front electrode 09 is used to protect corresponding first front electrode 05, the upper table of the radium tangent line 08
Face is provided with the second protective layer 10 and is covered on the first protective layer 07, the ceramic substrate 01 positioned at the both sides of the first front electrode 05
Two sides be respectively arranged with side electrode 11, for the first front electrode 05 and backplate 04 to be turned on.
The ceramic substrate 01 is made of oxidation aluminium material, and cost is relatively low, is easy to criticize producing, the backplate 04,
The surface of first front electrode 05 and side electrode 11 is coated with nickel dam 12, and the outer surface of the nickel dam 12 is coated with tin layers 13.
First front electrode 05 is made of silver-colored palladium material, and the perfect heat-dissipating of silver-colored palladium material can lift resistance
Reliability and more preferable power-performance, second front electrode 09 are made of resin ag material, can effectively and preferably be protected
The first front electrode 05 is protected, to ensure the reliability and stability of resistance.
The thickness of the nickel dam 15 is 4-15 μm, and the thickness of tin layers 16 is 5-15 μm, the printing figure of the resistance resistance body 06
Shape area is 0.020mm2-0.024mm2。
Relative to prior art, above-mentioned high-density and superminiature thick film Chip-R is simple in construction, easy to use, has
Excellent power characteristic, and relatively low cost of manufacture, while also meeting Client application end to high-density and superminiature thick film chip
The application demand of resistance.
The manufacture method of the high-density and superminiature thick film Chip-R of the present invention, comprises the following steps：
Step（1）, as shown in figs 2-4, ceramic base plate body is made by material of aluminum oxide, at the back side of ceramic substrate using sharp
The radium-shine cutting mode of light, which is carved, to be put a plurality of folding bar line 02 of its decile, and laser cutting mode is used in the front of ceramic substrate
Carve and put a plurality of folding grain line 03 of its decile, folding bar line 02 and folding grain the line 03 perpendicular setting in space, by ceramic base plate body
It is divided into several pieces ceramic substrate 01, it is possible to produce multiple high-density and superminiature thick film Chip-Rs, improves production efficiency, drop
Low production cost；
Step（2）, carried out as shown in figure 5, folding bar line 02, the ceramic base plate body of folding grain line 03 will be equipped with quarter by ultrasonic instrument
Cleaning；
Step（3）, as shown in fig. 6, coating silver paste is printed by silk screen thick film screen printing mode at the back side of ceramic base plate body, and
It is sintered, sintering temperature is：850 ± 5 DEG C, so as to form backplate at the back side of each ceramic substrate 01 of ceramic base plate body
04；
Step（4）, as shown in fig. 7, rolling over the symmetrical portion in inner side of grain line 03 on the front of each ceramic substrate 01 of ceramic base plate body
Position, the silver-colored palladium slurry of coating is printed by silk screen thick film screen printing mode, and is sintered, and sintering temperature is：850 ± 5 DEG C, so that
The front of each ceramic substrate 01 of ceramic base plate body forms symmetrically arranged first front electrode 05, silver-colored palladium slurry be made first
Front electrode 05, heat dispersion more preferably, can lift the reliability and more preferable power-performance of product；
Step（5）, as shown in figure 8, electric in the first front of the positive both sides of each ceramic substrate 01 by silk screen thick film screen printing mode
One layer of resistance body slurry of printing coating between pole 05, and be sintered, sintering temperature is：850 ± 5 DEG C, so as to form resistance resistance body
06, the printed pattern area of resistance resistance body 06 is 0.020mm2-0.024mm2, meet high-density and superminiature thick film Chip-R
Demand；
Step（6）, as shown in figure 9, in the upper surface of resistance resistance body 06, one layer of glass of coating is printed by silk screen thick film screen printing mode
Glass slurry, and be sintered, sintering temperature is：600 ± 5 DEG C, so as to form the first protective layer as protective resistance resistance body 06
07；
Step（7）, as shown in Figure 10, the mode cut by using laser is modified to resistance resistance body 06, forms visitor
Resistance and precision needed for family, the formation radium tangent line 08 on the protective layer 07 of resistance resistance body 06 and first, laser adjustment mode,
Resistance and precision as defined in not only reaching, moreover it is possible to which preferably reduction laser cuts the damage to resistance resistance body；
Step（8）, as shown in figure 11, in the upper surface of the first front electrode 05, pass through one layer of screen printing mode printing coating
Resin silver paste, and be sintered, sintering temperature is：200 ± 10 DEG C, thus formed as the first front electrode 05 second just
Face electrode 09, so as to be more beneficial for the lifting of product power, the second front electrode 09 is made of resin ag material, can effectively and
The first front electrode 05 is preferably protected, to ensure the reliability and stability of resistance；
Step（9）, as shown in figure 12, in the upper surface of radium tangent line 08, pass through screen printing mode printing one layer of paste resin of coating
Material, and be sintered, sintering temperature is：200 ± 10 DEG C, so that the second protective layer 10 as resistance resistance body 06 is formed, and the
Two protective layers 10 and it is covered on the first protective layer 07；
Step（10）, as shown in figure 13, step will be passed through along every folding bar line 02 of the ceramic base plate body（1）- step（9）
Ceramic base plate body after processing, is sequentially converted into the ceramic substrate strip semi-finished product of strip；
Step（11）, as shown in figure 14, ceramic substrate strip semi-finished product are stacked by way of tool is stacked, to pottery
The two sides of porcelain substrate strip semi-finished product use true nickel plating chromium alloy material mode, and formation makes the first front electrode 05 and back side electricity
The side electrode 11 that pole 04 is turned on, the cost of material is low for nichrome, cheap；
Step（12）, as shown in figure 15, step will be passed through along every folding grain line 03 of the ceramic substrate strip semi-finished product（10）-
Step（11）Ceramic substrate strip semi-finished product after processing, are sequentially converted into the granular semi-finished product of granular ceramic substrate；
Step（13）, as shown in figure 16, by the backplate 04 of the granular semi-finished product of ceramic substrate, front electrode 05 and side electrode
Layer of metal nickel is electroplated in 11 surface by barrel plating mode, so as to form nickel dam 12；
Step（14）, as shown in figure 17, then the surface of the nickel dam 12 of the granular semi-finished product of ceramic substrate electroplated by barrel plating mode
Layer of metal tin, so as to form tin layers 13, completes the manufacture of high-density and superminiature thick film Chip-R, it is preferred that the nickel dam
12 thickness is 4-15 μm, and the thickness of tin layers 13 is 5-15 μm, so that the manufacture of high-density and superminiature thick film Chip-R is completed,
High-density and superminiature thick film Chip-R, as shown in Figure 1.
In summary, high-density and superminiature thick film Chip-R of the invention and its manufacture method, high-density and superminiature are thick
The manufacture method of film Chip-R is different from other elements, is more accurately controlled, and is reply high density, microminiature, portable
And wearable continuing to develop for smart electronics product scope and it is independent researched and developed, set in combination with existing production
Standby and production technology, by the adjustment to printed pattern and typography, is finally completed high-density and superminiature thick film Chip-R
Manufacture, can be applied to high-density printed circuit board assembling field, earphone, audiphone, bluetooth, communication apparatus, intelligent watch, hand
Machine radio-frequency module, micro hard disk, portable memory article（Such as SD card）Deng electronics field, high-density and superminiature thick film chip
Resistance it is simple in construction, it is easy to use, with high density, super-small, and relatively low cost of manufacture, can multiple resistance make simultaneously
Make, while application demand of the Client application end to high-density and superminiature thick film Chip-R is also met, with good application
Prospect.
The general principle and principal character and advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the simply explanation described in above-described embodiment and specification is originally
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (10)
1. a kind of high-density and superminiature thick film Chip-R, it is characterised in that：Including ceramic substrate（01）, the ceramic substrate
（01）The long side of the back side two be provided with folding bar line（02）, the ceramic substrate（01）Positive two short sides side be provided with folding grain line
（03）, the folding bar line（02）With folding grain line（03）It is perpendicular in space to set, the ceramic substrate（01）Back up
There is backplate（04）, the ceramic substrate（01）Front on roll over grain line（03）Inner side be symmetrically printed with the first front electrode
（05）, the front electrode of two panels first（05）Between be printed with resistance resistance body（06）, the resistance resistance body（06）Upper surface set
There is the first protective layer（07）, the resistance resistance body（06）And first protective layer（07）On be provided with radium tangent line（08）, two panels first
Front electrode（05）Upper surface be additionally provided with the second front electrode（09）, second front electrode（09）For protecting correspondence
The first front electrode（05）, the radium tangent line（08）Upper surface be provided with the second protective layer (10) and be covered in the first protection
Layer（07）On, positioned at the first front electrode（05）The ceramic substrate of both sides（01）Two sides be respectively arranged with side electrode
（11）, for by the first front electrode（05）With backplate（04）Conducting.
2. a kind of high-density and superminiature thick film Chip-R according to claim 1, it is characterised in that：The ceramic substrate
（01）It is made of oxidation aluminium material.
3. a kind of high-density and superminiature thick film Chip-R according to claim 1, it is characterised in that：The backplate
（04）, the first front electrode（05）And side electrode（11）Surface be coated with nickel dam（12）, the nickel dam（12）Outer surface
It is coated with tin layers（13）.
4. a kind of high-density and superminiature thick film Chip-R according to claim 1, it is characterised in that：First front
Electrode（05）It is made of silver-colored palladium material, second front electrode（09）It is made of resin ag material.
5. a kind of high-density and superminiature thick film Chip-R according to claim 3, it is characterised in that：The nickel dam（15）
Thickness be 4-15 μm.
6. a kind of high-density and superminiature thick film Chip-R according to claim 3, it is characterised in that：The tin layers（16）
Thickness be 5-15 μm.
7. a kind of high-density and superminiature thick film Chip-R according to claim 1, it is characterised in that：The resistance resistance body
（06）Printed pattern area be 0.020mm2-0.024mm2。
8. a kind of manufacture method of high-density and superminiature thick film Chip-R, it is characterised in that：Comprise the following steps：
Step（1）, ceramic base plate body is made by material of aluminum oxide, laser cutting mode is used at the back side of ceramic substrate
Quarter is put a plurality of folding bar line of its decile（02）, carved and put its decile using laser cutting mode in the front of ceramic substrate
A plurality of folding grain line（03）, folding bar line（02）With folding grain line（03）It is perpendicular in space to set, ceramic base plate body is divided into
Several pieces ceramic substrate（01）；
Step（2）, folding bar line will be equipped with quarter（02）, folding grain line（03）Ceramic base plate body cleaned by ultrasonic instrument；
Step（3）, coating silver paste is printed by silk screen thick film screen printing mode at the back side of ceramic base plate body, and be sintered,
So as in each ceramic substrate of ceramic base plate body（01）The back side formed backplate（04）；
Step（4）, in each ceramic substrate of ceramic base plate body（01）Front on roll over grain line（03）Inner side antimere, pass through
Silk screen thick film screen printing mode prints the silver-colored palladium slurry of coating, and is sintered, so that in each ceramic substrate of ceramic base plate body（01）
Front form symmetrically arranged first front electrode（05）；
Step（5）, by silk screen thick film screen printing mode in each ceramic substrate（01）First front electrode of positive both sides（05）It
Between printing one layer of resistance body slurry of coating, and be sintered, so as to form resistance resistance body（06）；
Step（6）, in resistance resistance body（06）Upper surface, by silk screen thick film screen printing mode print coating one layer of glass paste,
And be sintered, so as to be formed as protective resistance resistance body（06）The first protective layer（07）；
Step（7）, the mode cut by using laser is to resistance resistance body（06）It is modified, the resistance formed needed for client
Value and precision, in resistance resistance body（06）And first protective layer（07）Upper formation radium tangent line（08）；
Step（8）, in the first front electrode（05）Upper surface, pass through screen printing mode printing coating one layer of resin silver paste
Material, and be sintered, so as to be formed as the first front electrode（05）The second front electrode（09）；
Step（9）, in radium tangent line（08）Upper surface, by screen printing mode printing one layer of resin slurry of coating, and carry out
Sintering, so as to be formed as resistance resistance body（06）The second protective layer（10）, and the second protective layer (10) and it is covered in the first guarantor
Sheath（07）On；
Step（10）, along every folding bar line of the ceramic base plate body（02）Step will be passed through（1）- step（9）Pottery after processing
Porcelain substrate body, is sequentially converted into the ceramic substrate strip semi-finished product of strip；
Step（11）, ceramic substrate strip semi-finished product are stacked by way of tool is stacked, to ceramic substrate strip
The two sides of semi-finished product use true nickel plating chromium alloy material mode, and formation makes the first front electrode（05）With backplate（04）Lead
Logical side electrode（11）；
Step（12）, grain line is rolled over along every of the ceramic substrate strip semi-finished product（03）Step will be passed through（10）- step（11）
Ceramic substrate strip semi-finished product after processing, are sequentially converted into the granular semi-finished product of granular ceramic substrate；
Step（13）, by the backplate of the granular semi-finished product of ceramic substrate（04）, front electrode（05）And side electrode（11）'s
Layer of metal nickel is electroplated in surface by barrel plating mode, so as to form nickel dam（12）；
Step（14）, then by the nickel dam of the granular semi-finished product of ceramic substrate（12）Surface layer of metal is electroplated by barrel plating mode
Tin, so as to form tin layers（13）, complete the manufacture of high-density and superminiature thick film Chip-R.
9. the manufacture method of high-density and superminiature thick film Chip-R according to claim 8, it is characterised in that：The nickel
Layer（12）Thickness be 4-15 μm, the tin layers（13）Thickness be 5-15 μm, the resistance resistance body（06）Printed pattern face
Product is 0.020mm2-0.024mm2。
10. the manufacture method of high-density and superminiature thick film Chip-R according to claim 8, it is characterised in that：Step
（3）In the sintering temperature of silver paste be：850 ± 5 DEG C, step（4）In the sintering temperature of silver-colored palladium slurry be：850 ± 5 DEG C,
Step（5）Resistance body slurry sintering temperature be：850 ± 5 DEG C, step（6）The sintering temperature of middle glass paste is：600 ± 5 DEG C,
Step（8）In the sintering temperatures of Shu Zhi Silver slurries be：200 ± 10 DEG C, step（9）In the sintering temperature of resin slurry be：
200±10℃。
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