CN206893379U - A kind of high power thick film Chip-R - Google Patents
A kind of high power thick film Chip-R Download PDFInfo
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- CN206893379U CN206893379U CN201720570067.8U CN201720570067U CN206893379U CN 206893379 U CN206893379 U CN 206893379U CN 201720570067 U CN201720570067 U CN 201720570067U CN 206893379 U CN206893379 U CN 206893379U
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- protective layer
- thick film
- high power
- film chip
- ceramic substrate
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Abstract
The utility model discloses a kind of high power thick film Chip-R,Resistance includes ceramic substrate,It is carved with the folding bar line being arranged in a mutually vertical manner and folding grain line in the upper surface of ceramic substrate,Folding bar line and folding grain line Component units lattice on an upper,Backplate is printed with the lower surface of ceramic substrate,The two sides of cell and it is symmetrically arranged with the inside of corresponding folding bar line and is printed with front electrode,Resistance resistance body is printed between adjacent front electrode,The upper surface of resistance resistance body is provided with the first protective layer,Radium tangent line is provided with resistance resistance body and the first protective layer,The upper surface of radium tangent line is provided with the second protective layer and is covered on the first protective layer,The upper surface of second protective layer is provided with the 3rd protective layer,The middle position of 3rd protective layer upper surface is provided with character code layer,Side electrode is respectively arranged with positioned at the two sides of the ceramic substrate of front electrode both sides.The utility model is simple in construction, easy to use, has excellent power characteristic, and relatively low cost of manufacture.
Description
Technical field
It the utility model is related to technical field of electronic components, and in particular to a kind of high power thick film Chip-R.
Background technology
With the development of science and technology the requirement of the development and people in epoch to each electronic product is constantly lifted, dependable performance
It is also brilliant to thick film and the thick film Chip-R of process stabilizing also answers the specific demand of electronic product that diversified development trend is presented
Sheet resistance, which brings new opportunity to develop, particularly Client application end, higher want to the power index of thick film Chip-R
Ask.At present, the power of thick film Chip-R common in existing industry is relatively low, and people can not be met to high power thick film Chip-R
Demand, promote resistor manufacturer manufacture to go out the thick film Chip-R with more power, it is above-mentioned to solve
Problem.
Utility model content
The purpose of this utility model is to overcome existing thick film Chip-R, and power is relatively low, and people can not be met to Gao Gong
The problem of rate thick film Chip-R demand.High power thick film Chip-R of the present utility model, there is higher power characteristic, bear
Lotus life capacity is stronger, have small volume, it is in light weight, be adapted to Reflow Soldering and wave-soldering, electric performance stablity, reliability is high, assembles
Cost it is low and with automatic dress be sticked it is standby match, high mechanical strength, meet the advantages that environmental requirement, have a good application prospect.
In order to achieve the above object, the utility model is used
Technical scheme be：
A kind of high power thick film Chip-R, it is characterised in that：Including ceramic substrate, the upper surface of the ceramic substrate is carved
There are the folding bar line that is arranged in a mutually vertical manner and folding grain line, the folding bar line and folding grain line Component units lattice on an upper, the pottery
It is printed with backplate on the lower surface of porcelain substrate, the two sides of cell and is symmetrically arranged with the inside of corresponding folding bar line
Front electrode is printed with, resistance resistance body is printed between adjacent front electrode, the upper surface of the resistance resistance body is provided with
One protective layer, radium tangent line is provided with the resistance resistance body and the first protective layer, the upper surface of the radium tangent line is provided with second
Protective layer and it is covered on the first protective layer, the upper surface of second protective layer is provided with the 3rd protective layer, and the described 3rd protects
The middle position of sheath upper surface is provided with character code layer, and the two sides of the ceramic substrate positioned at front electrode both sides are set respectively
Side electrode is equipped with, for front electrode to be turned on backplate.
A kind of foregoing high power thick film Chip-R, it is characterised in that：The ceramic substrate is using oxidation aluminium material system
Into.
A kind of foregoing high power thick film Chip-R, it is characterised in that：The backplate, front electrode and side electricity
The surface of pole is coated with nickel dam, and the outer surface of the nickel dam is coated with tin layers.
A kind of foregoing high power thick film Chip-R, it is characterised in that：The front electrode is made of silver-colored palladium material.
A kind of foregoing high power thick film Chip-R, it is characterised in that：The thickness of the nickel dam is 4-15 μm.
A kind of foregoing high power thick film Chip-R, it is characterised in that：The thickness of the tin layers is 5-15 μm.
The beneficial effects of the utility model are：High power thick film Chip-R of the present utility model, by existing thickness
The structure and production technology of film Chip-R optimize improvement, with new structure of the present utility model, from silver-colored palladium slurry
It is made as front electrode, resistance resistance body using thick-film resistor paste, using thick film print technology, the work(of product can be made
Rate gets a promotion, while relatively low cost of manufacture and resistance-power characteristic index, can give this high power thick film Chip-R band
Come more and widely apply, the more traditional conventional thick membrane Chip-R of high power thick film Chip-R of the present utility model,
With higher power characteristic, load life ability is stronger, have small volume, it is in light weight, be adapted to Reflow Soldering and wave-soldering, be electrical
Can it is stable, reliability is high, assembly cost is low and with automatic dress be sticked it is standby match, high mechanical strength, to meet environmental requirement etc. excellent
Point, it can be widely applied to computer, mobile phone, power supply, digital camera, Medical Instruments, military equipment, automation equipment, telecommunication apparatus
Among field, its market demand and application prospect are extremely wide, meanwhile, can with competitiveness of the enterprise in the same trade,
Abundant economic benefit is brought for enterprise, is had a good application prospect.
Brief description of the drawings
Fig. 1 is the structural representation of high power thick film Chip-R of the present utility model；
The step of Fig. 2 is the manufacture method of high power thick film Chip-R of the present utility model（1）Schematic diagram afterwards；
The step of Fig. 3 is the manufacture method of high power thick film Chip-R of the present utility model（2）Schematic diagram afterwards；
The step of Fig. 4 is the manufacture method of high power thick film Chip-R of the present utility model（3）Schematic diagram afterwards；
The step of Fig. 5 is the manufacture method of high power thick film Chip-R of the present utility model（4）Schematic diagram afterwards；
The step of Fig. 6 is the manufacture method of high power thick film Chip-R of the present utility model（5）Schematic diagram afterwards；
The step of Fig. 7 is the manufacture method of high power thick film Chip-R of the present utility model（6）Schematic diagram afterwards；
The step of Fig. 8 is the manufacture method of high power thick film Chip-R of the present utility model（7）Schematic diagram afterwards；
The step of Fig. 9 is the manufacture method of high power thick film Chip-R of the present utility model（8）Schematic diagram afterwards；
The step of Figure 10 is the manufacture method of high power thick film Chip-R of the present utility model（9）Schematic diagram afterwards；
The step of Figure 11 is the manufacture method of high power thick film Chip-R of the present utility model（10）Schematic diagram afterwards；
The step of Figure 12 is the manufacture method of high power thick film Chip-R of the present utility model（11）Schematic diagram afterwards；
The step of Figure 13 is the manufacture method of high power thick film Chip-R of the present utility model（12）Schematic diagram afterwards；
The step of Figure 14 is the manufacture method of high power thick film Chip-R of the present utility model（13）Schematic diagram afterwards.
The step of Figure 15 is the manufacture method of high power thick film Chip-R of the present utility model（14）Schematic diagram afterwards.
Embodiment
Below in conjunction with Figure of description, the utility model is further described.
As shown in figure 1, high power thick film Chip-R of the present utility model, including ceramic substrate 01, the ceramic substrate
The folding bar line 04 being arranged in a mutually vertical manner and folding grain line 05 are carved with 01 upper surface 02, and the folding bar line 04 and folding grain line 05 are in upper table
Component units lattice on face 02, are printed with backplate 06 on the lower surface 03 of the ceramic substrate 01, the two sides of cell and
It is symmetrically arranged with positioned at the corresponding inner side of folding bar line 04 and is printed with front electrode 07, is printed between adjacent front electrode 07
Resistance resistance body 08, the upper surface of the resistance resistance body 08 are provided with the first protective layer 09, and the resistance resistance body 08 and first is protected
Radium tangent line 10 is provided with layer 09, the upper surface of the radium tangent line 10 is provided with the second protective layer 11 and is covered in the first protective layer
On 09, the upper surface of second protective layer 11 is provided with the 3rd protective layer 12, the upper surface of the 3rd protective layer 12 it is placed in the middle
Position is provided with character code layer 13, and the two sides of the ceramic substrate 01 positioned at the both sides of front electrode 07 are respectively arranged with side electricity
Pole 14, for front electrode 07 and backplate 06 to be turned on.
The ceramic substrate 01 is made of oxidation aluminium material, and cost is relatively low, is easy to batch production, backplate 06, front
The surface of electrode 07 and side electrode 14 is coated with nickel dam 15, and the outer surface of the nickel dam 15 is coated with tin layers 16, the front electricity
Pole 07 is made of silver-colored palladium material, the perfect heat-dissipating of silver-colored palladium material, can lift the reliability of resistance and more preferable power-performance.
Preferably, the thickness of the nickel dam 15 is 4-15 μm.
Preferably, the thickness of the tin layers 16 is 5-15 μm.
Relative to prior art, above-mentioned high power thick film Chip-R is simple in construction, easy to use, has excellent
Power characteristic, and relatively low cost of manufacture, while also meet Client application end and need are applied to high power thick film Chip-R
Ask.
The manufacture method of high power thick film Chip-R of the present utility model, comprises the following steps,
Step（1）, as shown in Fig. 2 ceramic substrate 01 is made by material of aluminum oxide, in the upper surface 02 of ceramic substrate 01
It is carved with the folding bar line 04 and folding grain line 05 of a plurality of perpendicular setting, folding bar line 04 and folding grain line 05 are by the upper surface of ceramic substrate 01
02 is divided into multiple identical cells, such one piece of ceramic substrate 01, can be divided into multiple high power thick film Chip-R institutes
The substrate needed, it is possible to produce multiple high power thick film Chip-Rs, improve production efficiency；
Step（2）, as shown in figure 3, printing coating by silk screen thick film screen printing mode in the lower surface 03 of ceramic substrate 01
Silver paste, and be sintered, sintering temperature is：850 ± 5 DEG C, so as to form backplate in the lower surface 03 of ceramic substrate 01
06；
Step（3）, as shown in figure 4, in the two sides of each unit lattice of the upper surface 02 of ceramic substrate 01 and positioned at corresponding
The inner side antimere of folding bar line 04, the silver-colored palladium slurry of coating is printed by silk screen thick film screen printing mode, and be sintered, sintering temperature
Spend and be：850 ± 5 DEG C, so as to form front electrode 07, front electrode made of silver-colored palladium slurry in the upper surface 02 of ceramic substrate 01
07, heat dispersion is more preferable, can lift the reliability of product and more preferable power-performance；
Step（4）, as shown in figure 5, by silk screen thick film screen printing mode between the front electrode 07 of each unit lattice both sides
Printing one layer of resistance body slurry of coating, and be sintered, sintering temperature is：850 ± 5 DEG C, so as to form resistance resistance body 08；
Step（5）, as shown in fig. 6, in the upper surface of resistance resistance body 08, coating one is printed by silk screen thick film screen printing mode
Layer glass paste, and be sintered, sintering temperature is：600 ± 5 DEG C, protected so as to be formed as the first of protective resistance resistance body 08
Sheath 09；
Step（6）, as shown in fig. 7, the mode cut by using laser is modified to resistance resistance body 08, formed
Resistance and precision needed for client, radium tangent line 10, laser adjustment side are formed on the protective layer 09 of resistance resistance body 08 and first
Formula, defined resistance and precision are not only reached, moreover it is possible to preferably reduce damage of the laser cutting to resistance resistance body；
Step（7）, as shown in figure 8, in the upper surface of the first protective layer 09, pass through screen printing mode printing one layer of tree of coating
Fat slurry, and be sintered, sintering temperature is：200 ± 10 DEG C, so as to form the second protective layer 11 as protection 08；
Step（8）, as shown in figure 9, in the upper surface of the second protective layer 11, pass through one layer of screen printing mode printing coating
Resin slurry, and be sintered, sintering temperature is：200 ± 10 DEG C, so as to form the 3rd protective layer 12 as protection 08, institute
State the 3rd protective layer 12 and the second protective layer 11 is completely overlapped, so, the 3rd protective layer 13 covers all the second protective layer 11,
Play a part of further protective resistance resistance body 08, so as to be more beneficial for the lifting of product power；
Step（9）, as shown in Figure 10, in the upper surface middle position of the 3rd protective layer 13, pass through silk screen thick film screen printing side
Formula printing one layer of character code slurry of coating, and be sintered, sintering temperature is：It is 200 ± 10 DEG C, big as mark resistance so as to be formed
Small character code layer 13, for indicating resistance；
Step（10）, as shown in figure 11, step will be passed through along every folding bar line 04 of the ceramic substrate 01（1）- step
（9）Ceramic substrate 01 after processing, sequentially it is converted into the high power thick film Chip-R strip semi-finished product of strip；
Step（11）, as shown in figure 12, step will be passed through along every folding bar line 04 of the ceramic substrate 01（1）- step
（9）High power thick film Chip-R strip semi-finished product are stacked on by ceramic substrate 01 after processing by way of tool stacking
Together, to high power thick film Chip-R half into two sides use true nickel plating chromium alloy material mode, being formed makes front electrode
07 side electrode 14 turned on backplate 06, the cost of material is low for nichrome, cheap；
Step（12）, as shown in figure 13, along every folding grain line 05 of the high power thick film Chip-R strip semi-finished product
Step will be passed through（10）- step（11）High power thick film Chip-R strip semi-finished product after processing, are sequentially converted into granular height
The granular semi-finished product of power thick film Chip-R；
Step（13）, as shown in figure 14, by the backplate 06 of the granular semi-finished product of high power thick film Chip-R, front electricity
Layer of metal nickel is electroplated in pole 07 and the surface of side electrode 14 by barrel plating mode, so as to form nickel dam 15；
Step（14）, as shown in figure 15, then the surface of the nickel dam 15 of the granular semi-finished product of high power thick film Chip-R led to
Cross barrel plating mode and electroplate layer of metal tin, so as to form tin layers 16, the thickness of the nickel dam 15 is 4-15 μm, the thickness of tin layers 16
For 5-15 μm, so as to complete the manufacture of high power thick film Chip-R, high power thick film Chip-R, as shown in Figure 1.
In summary, high power thick film Chip-R of the present utility model, the knot to existing thick film Chip-R is passed through
Structure and production technology optimize improvement, with new structure of the present utility model, from silver-colored palladium slurry as front electrode, electricity
Resistance resistance body is made using thick-film resistor paste, using thick film print technology, the power of product can be made to get a promotion, simultaneously
Relatively low cost of manufacture and resistance-power characteristic index, it can be brought to this high power thick film Chip-R more and more extensive
Application, the more traditional conventional thick membrane Chip-R of high power thick film Chip-R of the present utility model, have higher power special
Property, load life ability is stronger, have small volume, it is in light weight, be adapted to Reflow Soldering and wave-soldering, electric performance stablity, reliability height,
Assembly cost it is low and with automatic dress be sticked it is standby match, high mechanical strength, meet the advantages that environmental requirement, can be widely applied to electricity
Among the fields such as brain, mobile phone, power supply, digital camera, Medical Instruments, military equipment, automation equipment, telecommunication apparatus, its market
Demand and application prospect are extremely wide, meanwhile, abundant warp can be brought for enterprise with competitiveness of the enterprise in the same trade
Ji benefit, has a good application prospect.
The advantages of general principle and principal character of the present utility model and the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the utility model is not restricted to the described embodiments, described in above-described embodiment and specification
Simply illustrate principle of the present utility model, on the premise of the spirit and scope of the utility model is not departed from, the utility model is also
Various changes and modifications are had, these changes and improvements are both fallen within claimed the scope of the utility model.The utility model
Claimed scope is by appended claims and its equivalent thereof.
Claims (6)
- A kind of 1. high power thick film Chip-R, it is characterised in that：Including ceramic substrate（01）, the ceramic substrate（01）It is upper Surface（02）It is carved with the folding bar line being arranged in a mutually vertical manner（04）With folding grain line（05）, the folding bar line（04）With folding grain line（05） Upper surface（02）Upper Component units lattice, the ceramic substrate（01）Lower surface（03）On be printed with backplate（06）, unit The two sides of lattice and the folding bar line corresponding to（04）Inner side, which is symmetrically arranged with, is printed with front electrode（07）, adjacent front Electrode（07）Between be printed with resistance resistance body（08）, the upper surface of the resistance resistance body (08) is provided with the first protective layer（09）, The resistance resistance body (08) and the first protective layer（09）On be provided with radium tangent line（10）, the radium tangent line（10）Upper surface set There is the second protective layer (11) and be covered on the first protective layer (09), the upper surface of second protective layer (11) is provided with the 3rd Protective layer (12), the middle position of the 3rd protective layer (12) upper surface is provided with character code layer (13), described positioned at front electricity Pole（07）The ceramic substrate of both sides（01）Two sides be respectively arranged with side electrode（14）, for by front electrode（07）With the back of the body Face electrode（06）Conducting.
- A kind of 2. high power thick film Chip-R according to claim 1, it is characterised in that：The ceramic substrate（01）Adopt It is made of oxidation aluminium material.
- A kind of 3. high power thick film Chip-R according to claim 1, it is characterised in that：The backplate（06）、 Front electrode（07）And side electrode（14）Surface be coated with nickel dam（15）, the nickel dam（15）Outer surface be coated with tin layers （16）.
- A kind of 4. high power thick film Chip-R according to claim 1, it is characterised in that：The front electrode（07）Adopt It is made of silver-colored palladium material.
- A kind of 5. high power thick film Chip-R according to claim 3, it is characterised in that：The nickel dam（15）Thickness For 4-15 μm.
- A kind of 6. high power thick film Chip-R according to claim 3, it is characterised in that：The tin layers（16）Thickness For 5-15 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720570067.8U CN206893379U (en) | 2017-05-22 | 2017-05-22 | A kind of high power thick film Chip-R |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720570067.8U CN206893379U (en) | 2017-05-22 | 2017-05-22 | A kind of high power thick film Chip-R |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206893379U true CN206893379U (en) | 2018-01-16 |
Family
ID=61320234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720570067.8U Active CN206893379U (en) | 2017-05-22 | 2017-05-22 | A kind of high power thick film Chip-R |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206893379U (en) |
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2017
- 2017-05-22 CN CN201720570067.8U patent/CN206893379U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180521 Address after: 226300 No. 789 intersection of hope road and Kang Fu Road, Tongzhou District, Nantong, Jiangsu. Patentee after: Lizhi electronic (Nantong) Co. Ltd. Address before: 215300 No. 989, Han Pu Road, Chengbei hi tech Industrial Park, Kunshan, Suzhou, Jiangsu Patentee before: LIZ Electronics (Kunshan) Co., Ltd. |
|
| TR01 | Transfer of patent right |