CN210200433U - Thick film chip resistor with wide electrode structure - Google Patents
Thick film chip resistor with wide electrode structure Download PDFInfo
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- CN210200433U CN210200433U CN201921350430.0U CN201921350430U CN210200433U CN 210200433 U CN210200433 U CN 210200433U CN 201921350430 U CN201921350430 U CN 201921350430U CN 210200433 U CN210200433 U CN 210200433U
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- 239000010410 layer Substances 0.000 claims abstract description 107
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000011241 protective layer Substances 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000011265 semifinished product Substances 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 229910052705 radium Inorganic materials 0.000 description 2
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model discloses a thick film chip resistor with wide electrode structure, which comprises a base body, wherein the back surface and the front surface of the base body are respectively provided with a back electrode and a positive electrode, the back electrode comprises a first back electrode layer and a second back electrode layer which are oppositely arranged and extend along the length direction of the base body, and the lengths of the first back electrode layer and the second back electrode layer are equal to the length of the base body; the positive electrode comprises a first positive electrode layer and a second positive electrode layer which are oppositely arranged and extend along the length direction of the substrate, and the length of the first positive electrode layer and the length of the second positive electrode layer are equal to the length of the substrate; the first positive electrode layer and the second positive electrode layer are connected through a resistor layer, and a glass protective layer and a resin protective layer are covered on the resistor layer; laser lines are arranged at corresponding positions on the resistor layer and the glass protective layer; the positive electrode and the back electrode are connected and conducted through the side electrode. The utility model discloses a to positive electrode and back electrode all adopt wide electrode structural design, compare in traditional positive electrode and back electrode area increase respectively 2 times at least, can increase the heat radiating area of product, make the power of product obtain promoting.
Description
Technical Field
The utility model belongs to the technical field of electron device, concretely relates to thick film wafer resistor with wide electrode structure.
Background
With the development of science and technology, the development of the era and the requirements of people on various electronic products are continuously improved, the thick film chip resistor with reliable performance and stable process also presents a diversified development trend according to the special requirements of the electronic products, and new development opportunities are brought to the thick film chip resistor, and especially, the client application has higher requirements on the heat dissipation, current resistance and power indexes of the thick film chip resistor. At present, as shown in fig. 1(a) and fig. 1(b), since the areas of the positive electrode and the back electrode of the common thick film chip resistor in the industry are too small, the heat dissipation performance is poor, the current resistance is low, and the power of the product is difficult to be improved, so that the requirements of people on the thick film chip resistor with better heat dissipation performance, stronger current resistance and higher power cannot be met, and the resistor manufacturer is prompted to develop a thick film chip resistor which has better heat dissipation performance and stronger current resistance than the thick film chip resistor in the existing market, and can effectively improve the power of the thick film chip resistor, so as to solve the above problems.
SUMMERY OF THE UTILITY MODEL
To the above problem, the utility model provides a thick film wafer resistor with wide electrode structure can effectively increase the heat radiating area of product to can effectively promote the power characteristic of product, and lower cost of manufacture.
In order to realize the technical purpose, reach above-mentioned technological effect, the utility model discloses a following technical scheme realizes:
a thick film chip resistor having a wide electrode structure, comprising:
a substrate;
the back electrode is arranged on the back surface of the substrate and comprises a first back electrode layer and a second back electrode layer which are oppositely arranged, the first back electrode layer and the second back electrode layer both extend along the length direction of the substrate, and the lengths of the first back electrode layer and the second back electrode layer are equal to the length of the substrate;
the positive electrode is arranged on the front surface of the substrate and comprises a first positive electrode layer and a second positive electrode layer which are oppositely arranged, the first positive electrode layer and the second positive electrode layer both extend along the length direction of the substrate, and the length of the first positive electrode layer and the length of the second positive electrode layer are equal to the length of the substrate;
the resistor layer is arranged on the front surface of the base body, and two ends of the resistor layer are respectively connected with the first positive electrode layer and the second positive electrode layer;
a glass protective layer covering the resistor layer;
the laser tangent line is arranged at the corresponding positions on the resistor layer and the glass protective layer;
a resin protective layer covering the glass protective layer;
and the side electrodes are respectively connected with the positive electrode and the back electrode, so that the back electrode is conducted with the positive electrode.
As a further improvement of the present invention, the side electrode includes a first side electrode layer and a second side electrode layer, the first side electrode layer and the second side electrode layer are respectively disposed on both sides of the base body, and are divided into a connection between the first back electrode layer and the first positive electrode layer, and between the second back electrode layer and the second positive electrode layer, so that the back electrode is conducted with the positive electrode.
As a further improvement of the utility model, the outside of the back electrode, the positive electrode and the side electrode is plated with a nickel layer and a tin layer in order.
As a further improvement of the utility model, the base body is a ceramic base body.
As a further improvement of the utility model, the upper surface of the second resin protection layer is provided with a character code layer.
As a further improvement of the utility model, the positive electrode, the back electrode and the side electrode are silver electrodes.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses a thick film chip resistor with wide electrode structure, through adopting wide electrode structural design to positive electrode and back electrode, compare in traditional positive electrode and back electrode area increase respectively by at least 2 times, thereby can increase the heat radiating area of product, make the power of product obtain promoting, lower cost of manufacture and resistance power characteristic index can bring more and more extensive application for this thick film chip resistor of wide electrode structure simultaneously, the thick film chip resistor of the wide electrode structure of the utility model has higher power characteristic than traditional conventional thick film chip resistor, load life ability is stronger, can be widely applied to among fields such as computer, cell-phone, power, digital camera, medical instrument, military equipment, automation equipment, telecommunication equipment, its market demand and application prospect are extremely wide, simultaneously, can promote enterprise's competitiveness in the same industry, brings great economic benefit for enterprises and has good application prospect.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
FIG. 1(a) is a top view of a conventional thick film chip resistor of the prior art;
FIG. 1(b) is a bottom view of the conventional thick film chip resistor of FIG. 1;
fig. 2(a) is a top view of a thick film chip resistor with a wide electrode structure according to an embodiment of the present invention;
fig. 2(b) is a bottom view of a thick film chip resistor with a wide electrode structure according to an embodiment of the present invention;
wherein: 01-substrate, 02-back electrode, 03-positive electrode, 04-resin protective layer and 05-code layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the scope of the invention.
The following description is made in detail for the application of the principles of the present invention with reference to the accompanying drawings.
Example 1
As shown in fig. 2(a) -2 (b), the present embodiment provides a thick film chip resistor having a wide electrode structure, including: the solar cell comprises a substrate 01, a back electrode 02, a positive electrode 03, a resistor layer, a glass protective layer, a radium tangent line, a resin protective layer 04 and a side electrode;
in a specific embodiment of this embodiment, the substrate 01 is a ceramic substrate 01;
the back electrode 02 is arranged on the back surface of the substrate 01 and comprises a first back electrode layer and a second back electrode layer which are oppositely arranged, the first back electrode layer and the second back electrode layer both extend along the length direction of the substrate 01, and the length of the first back electrode layer and the length of the second back electrode layer are equal to the length of the substrate 01;
the positive electrode 03 is arranged on the front surface of the substrate 01 and comprises a first positive electrode layer and a second positive electrode layer which are oppositely arranged, the first positive electrode layer and the second positive electrode layer both extend along the length direction of the substrate 01, and the length of the first positive electrode layer and the length of the second positive electrode layer are equal to the length of the substrate 01;
the resistor layer (not shown in the figure) is arranged on the front surface of the substrate 01, and two ends of the resistor layer are respectively connected with the first positive electrode layer and the second positive electrode layer;
the glass protective layer (not shown in the figure) covers the resistor layer;
the radium tangent lines (not shown in the figure) are arranged at corresponding positions on the resistor layer and the glass protective layer;
a resin protective layer 04 covering the glass protective layer;
the side electrodes are respectively connected with the positive electrode 03 and the back electrode 02, so that the back electrode 02 is conducted with the positive electrode 03; in a specific implementation manner of this embodiment, the side electrodes include a first side electrode layer and a second side electrode layer, which are respectively disposed on two sides of the substrate 01 and are divided into a first back electrode layer and a first positive electrode layer, and a second back electrode layer and a second positive electrode layer, so that the back electrode 02 is electrically connected to the positive electrode 03. And the outer sides of the back electrode 02, the positive electrode 03 and the side electrodes are sequentially plated with nickel layers and tin layers.
In a specific embodiment of this embodiment, the positive electrode 03, the back electrode 02 and the side electrodes are all silver electrodes.
Example 2
This example differs from example 1 in that: and the upper surface of the second resin protection layer 04 is provided with a character code layer 05 which is used as a mark of the resistor.
The utility model provides a thick film wafer resistor with wide electrode structure realizes according to following step when the preparation:
the method comprises the following steps that (1) an alumina ceramic matrix 01 with excellent heat dissipation performance is used as a resistor carrier;
the design of the widened wide electrode is adopted in the step (2), the design structure has better heat dissipation performance than that of a common thick film chip resistor, the heat dissipation area of the electrode is enlarged, the current resistance is better, and the purpose of improving the product power can be achieved. The method for manufacturing the back electrode on the back of the ceramic substrate 01 specifically comprises the following substeps:
(2.1) fixing the ceramic substrate 01 on a platform of a printing machine;
(2.2) respectively printing electrode materials on two symmetrical sides of the back surface of the ceramic substrate 01 along the length direction of the back surface of the ceramic substrate 01;
(2.3) taking out the ceramic substrate 01 and putting the ceramic substrate into a sintering device, setting the sintering time and temperature, and curing the electrode material to form a semi-finished product with the back electrode 02;
the design principle of the step (3) is the same as that of the back electrode 02 in the step (2). The positive electrode 03 is printed and manufactured on the front surface of the ceramic substrate 01, and the method specifically comprises the following substeps:
(3.1) fixing the ceramic substrate 01 on a platform of a printing machine;
(3.2) respectively printing electrode materials on two symmetrical sides of the front surface of the ceramic substrate 01 along the length direction of the front surface of the ceramic substrate 01, simultaneously printing resistor materials between the printed electrodes, and then printing glass protection materials on the resistor materials;
(3.3) taking out the ceramic substrate 01 and putting the ceramic substrate into a sintering device, setting the sintering time and temperature, and solidifying the electrode material, the resistor material and the glass protective material to form a semi-finished product with a positive electrode 03, a back electrode 02, a resistor layer and a glass protective layer;
step (4) insulating and protecting the resistor by using an insulating resin material;
the method specifically comprises the following substeps:
(4.1) placing the semi-finished product subjected to the step (3) into a laser resistance trimming machine to perform precision correction on a resistance layer in the laser resistance trimming machine so as to meet the requirements of product specification and precision;
(4.2) fixing the semi-finished product subjected to the step (4.1) on a platform of a printing machine;
(4.3) printing a resin protective material on the cut resistor layer and the glass protective layer;
(4.4) taking out the semi-finished product subjected to the step (4.3), putting the semi-finished product into a drying furnace device, and setting drying time and temperature to dry the resin protective material to form a resin protective layer 04;
and (5) printing and manufacturing identification characters on the upper surface of the resin protective layer 04 by using an ink printer so as to identify the resistance value. The method specifically comprises the following substeps:
(5.1) fixing the semi-finished product subjected to the step (3) on a platform of a printing machine;
(5.2) printing identification character materials on the surface of the resin protective layer 04;
(5.3) taking out the semi-finished product obtained in the step (5.2) and putting the semi-finished product into a sintering furnace device, setting sintering time and temperature to solidify the identification character material to form a character code layer 05;
and (6) after the steps (1) to (5) are completed, electroplating the surfaces of the back electrode and the front electrode, so that the product has better welding performance, and finally, manufacturing the thick film chip resistor with the wide electrode structure is completed to obtain the thick film chip resistor with the wide electrode structure.
To sum up, the thick film chip resistor with wide electrode structure of the utility model adopts the wide electrode structure design for the positive electrode and the back electrode, and increases the area of at least 2 times compared with the traditional positive electrode and the back electrode, thereby increasing the heat dissipation area of the product, improving the power of the product, bringing more and wider application to the thick film chip resistor with wide electrode structure due to the lower manufacturing cost and the resistance power characteristic index, compared with the traditional conventional thick film chip resistor, the thick film chip resistor with wide electrode structure of the utility model has higher power characteristic and stronger load life capability, can be widely applied to the fields of computers, mobile phones, power supplies, digital cameras, medical instruments, military equipment, automation equipment, telecommunication equipment and the like, and has extremely wide market demand and application prospect, meanwhile, the competitiveness of enterprises in the same industry can be improved, and the method brings rich economic benefits for the enterprises and has good application prospect.
The basic principles and the main features of the invention and the advantages of the invention have been shown and described above. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and that the foregoing embodiments and descriptions are provided only to illustrate the principles of the present invention without departing from the spirit and scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (6)
1. A thick film chip resistor having a wide electrode configuration, comprising:
a substrate;
the back electrode is arranged on the back surface of the substrate and comprises a first back electrode layer and a second back electrode layer which are oppositely arranged, the first back electrode layer and the second back electrode layer both extend along the length direction of the substrate, and the lengths of the first back electrode layer and the second back electrode layer are equal to the length of the substrate;
the positive electrode is arranged on the front surface of the substrate and comprises a first positive electrode layer and a second positive electrode layer which are oppositely arranged, the first positive electrode layer and the second positive electrode layer both extend along the length direction of the substrate, and the length of the first positive electrode layer and the length of the second positive electrode layer are equal to the length of the substrate;
the resistor layer is arranged on the front surface of the base body, and two ends of the resistor layer are respectively connected with the first positive electrode layer and the second positive electrode layer;
a glass protective layer covering the resistor layer;
the laser tangent line is arranged at the corresponding positions on the resistor layer and the glass protective layer;
a resin protective layer covering the glass protective layer;
and the side electrodes are respectively connected with the positive electrode and the back electrode, so that the back electrode is conducted with the positive electrode.
2. The thick film chip resistor with wide electrode structure as claimed in claim 1, wherein: the side electrodes comprise a first side electrode layer and a second side electrode layer, the first side electrode layer and the second side electrode layer are respectively arranged on two sides of the base body and are respectively connected with the first back electrode layer and the first positive electrode layer, and the second back electrode layer and the second positive electrode layer, so that the back electrodes are conducted with the positive electrodes.
3. The thick film chip resistor with wide electrode structure as claimed in claim 1, wherein: and the outer sides of the back electrode, the positive electrode and the side electrode are sequentially plated with a nickel layer and a tin layer.
4. The thick film chip resistor with wide electrode structure as claimed in claim 1, wherein: the substrate is a ceramic substrate.
5. The thick film chip resistor with wide electrode structure as claimed in claim 1, wherein: and the upper surface of the second resin protection layer is provided with a character code layer.
6. The thick film chip resistor with wide electrode structure as claimed in claim 1, wherein: the positive electrode, the back electrode and the side electrode are all silver electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921350430.0U CN210200433U (en) | 2019-08-20 | 2019-08-20 | Thick film chip resistor with wide electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921350430.0U CN210200433U (en) | 2019-08-20 | 2019-08-20 | Thick film chip resistor with wide electrode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210200433U true CN210200433U (en) | 2020-03-27 |
Family
ID=69866099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921350430.0U Active CN210200433U (en) | 2019-08-20 | 2019-08-20 | Thick film chip resistor with wide electrode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210200433U (en) |
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2019
- 2019-08-20 CN CN201921350430.0U patent/CN210200433U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231017 Address after: 226000 No. 789 Kangfu Road, Nantong High tech Industrial Development Zone, Nantong City, Jiangsu Province Patentee after: LIZHI ELECTRONICS (NANTONG) CO.,LTD. Address before: No. 989, Han Pu Road, Kunshan City, Suzhou, Jiangsu Patentee before: LIZ ELECTRONICS (KUNSHAN) Co.,Ltd. |
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| TR01 | Transfer of patent right |