CN201117381Y - Multiple layer-type current sensing component structure - Google Patents
Multiple layer-type current sensing component structure Download PDFInfo
- Publication number
- CN201117381Y CN201117381Y CNU2007203102290U CN200720310229U CN201117381Y CN 201117381 Y CN201117381 Y CN 201117381Y CN U2007203102290 U CNU2007203102290 U CN U2007203102290U CN 200720310229 U CN200720310229 U CN 200720310229U CN 201117381 Y CN201117381 Y CN 201117381Y
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- Prior art keywords
- current sensing
- sensing component
- layer
- substrate
- type current
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- 239000010410 layer Substances 0.000 claims abstract description 138
- 239000011241 protective layer Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 58
- 239000003292 glue Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 229910003322 NiCu Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003172 MnCu Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
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- Thermistors And Varistors (AREA)
Abstract
The utility model relates to a multi-layer current sensing component structure which at least includes one or more base plates; adhesion layers, at least two or more resistor layers and at least two separate electrode layers are arranged between the base plates; the resistor layers are respectively arranged on the other surface of the base plates opposite to the adhesion layers; adhesion layers are also arranged between the base plates and the resistor layers, so that the base plates and the resistor layers can be mutually integrated and connected through press-fit; the electrode layers are respectively arranged on the two end sides of the resistor layers; the resistor layers can be further provided with protective layers; the surfaces of the electrode layers are subsequently provided with conductive layers, nickel layers and tin layers, so as to form the multi-layer current sensing component structure.
Description
Technical field
The utility model provides a kind of multi-layered type current sensing component structure, aim to provide and a kind of at least one or above substrate and at least two or above resistive layer are sticked together pressing mutually by adhesion layer, form the multi-layered type current sensing component structure of Low ESR and anti-high power, high electric current.
Background technology
Along with light, thin, short, the little trend of electronic equipment; the general size of current sensing component is also more and more littler; so the appearance of the chip-shaped current sensing component that is widely used in the electronics technology product is at present arranged; be general traditional chip-shaped current sensing component 1 as shown in Figure 1; this chip-shaped current sensing component 1 forms the resistive layer 12 of alloys such as layer of Ni Cr/NiCu on a substrate 11; the layer protecting film 13 that is covered again on this resistive layer 12, substrate 11 upper and lower two side ends and side then are electrode layer 14.
And in above-mentioned traditional chip-shaped current sensing component, this resistive layer 12 can utilize thick film processing procedure (mode of printing) or thin film manufacture process (sputtering way) to take shape on the substrate 11; Wherein, with printing-type thick film processing procedure, because the technical restriction of printing process, partly the product of specification has surpassed the ability that processing procedure can be reached; Though partly the product of specification is within the processing procedure ability, the successive process yield after the printing is subjected to the printing process technology limitation and can't breaks through.Therefore, promptly there is producer partly to change and produces the chip-shaped current sensing component that traditional printing formula thick film processing procedure is had no idea to produce with thin film manufacture process (sputtering way), but, make chip-shaped current sensing component with thin film manufacture process, the investment of equipment is very expensive.
If will reach low-impedance chip-shaped current sensing component, the general mode that increases resistive layer thickness of utilizing is reached more, but the thickness that has increased resistive layer has increased material cost, and the thicker resistive layer of thickness is when later use etching or laser mode are repaired resistance, the degree of difficulty and the manufacturing cost of processing procedure have been increased, and aspect heat radiation, the setting of cooling mechanism is not used so can only be limited in the lower powered product.
The utility model content
The technical problem that the utility model solved is to provide a kind of at least one or above substrate and at least two or above resistive layer is sticked together pressing mutually by adhesion layer, forms the multi-layered type current sensing component structure of Low ESR and anti-high power, high electric current.
In view of this; the technical scheme of multi-layered type current sensing component structure of the present utility model is: include at least: at least one or above substrate; and be provided with adhesion layer between each substrate; at least two or above resistive layer and at least two electrode layers that separate; this resistive layer is located at this substrate another surface with respect to adhesion layer respectively; and also be provided with adhesion layer between this substrate and this resistive layer; each substrate can be mutually combined by the pressing mode with resistive layer to be connected; this electrode layer then is located at the both end sides of resistive layer respectively; and can further be provided with protective layer on this resistive layer; this electrode layer surface then is provided with conductive layer in regular turn; nickel dam and tin layer are to form the structure of integral multi-layered type current sensing component.
The beneficial effects of the utility model are:
1, utilizes the design of at least two or above parallel circuits that resistive layer forms, needn't additionally increase the thickness of resistive layer, can reach the resistance value of this current sensing component of reduction easily.
2, do not need to increase extra etch process, can form low-impedance multi-layered type current sensing component, simplify processing procedure and reduced etched cost.
3, this substrate and resistive layer form by pressing, and it is thicker that this resistive layer can form relative thickness, make the structure of integral multi-layered type current sensing component can form Low ESR, and then can anti-high power and high electric current.
4, be provided with heat-conducting glue between this substrate and resistive layer, the thermal source that resistive layer work can be produced can be sent to substrate via this heat-conducting glue, and is contacted with air and thermal source is left by substrate, to keep the task performance of this resistive layer.
5, this substrate can be ceramic substrate, can further quicken leaving of thermal source.
Description of drawings
Fig. 1 is for practising the structural representation that chip-shaped current sensing component is arranged;
Fig. 2 is the first example structure schematic perspective view of multi-layered type current sensing component in the utility model;
Fig. 3 is the second example structure schematic diagram of multi-layered type current sensing component in the utility model;
Fig. 4 is the 3rd an example structure schematic perspective view of multi-layered type current sensing component in the utility model;
Fig. 5 is the 4th an example structure schematic diagram of multi-layered type current sensing component in the utility model.
[figure number explanation]
Chip-shaped current sensing component 1 substrate 11
Resistive layer 12 diaphragms 13
Electrode layer 14 multi-layered type current sensing components 2
First substrate, 211 second substrates 212
Resistive layer 221,222 adhesion layers 23
First electrode layer, 241 the second electrode lays 242
Conductive layer 251,252 nickel dams 26
Embodiment
Your auditor is convenient to understand content of the present utility model in order to make, and the effect that can reach, cooperates the graphic specific embodiment of enumerating now, and introduction is described as follows in detail:
The utility model multi-layered type current sensing component structure, shown in first embodiment of Fig. 2, this multi-layered type current sensing component 2 includes at least:
At least one or above substrate, each substrate can be ceramic substrate, can be provided with first, second substrate 211,212 among the embodiment as shown in the figure, and 211,212 of first, second substrates are respectively equipped with adhesion layer 23.
At least two or above resistive layer, as shown be two resistive layers 221,222, this resistive layer 221,222 can be the NiCu/NiCr/MnCu alloy, and wherein a resistive layer 221 is located at the upper surface of first substrate 211, another resistive layer 222 then is located at the lower surface of second substrate 212, and 211,212 of two resistive layers 221,222 and first, second substrates are respectively equipped with adhesion layer 23.
At least two electrode layers 241,242 that separate, this electrode layer is located at the both end sides of resistive layer, among the embodiment as shown in the figure, resistive layer 221 both end sides of these first substrate, 211 upper surfaces are respectively equipped with two first electrode layers 241 that separate, and resistive layer 222 both end sides of these second substrate, 212 lower surfaces then are respectively equipped with two the second electrode lays 242 that separate.
Two conductive layers 251,252, this conductive layer 251,252 is located at 241,242 of first, second electrode layers respectively, to constitute being electrically connected of first, second electrode layer 241,242, each conductive layer 251,252 is extended to the surface of the second electrode lay 242 respectively towards the side of each substrate 211,212 by the surface of first electrode layer 241, each conductive layer 251,252 can be the copper layer, and these conductive layer 251,252 tops also can further be provided with nickel dam 26 and tin layer 27.
Wherein, this is first years old; second substrate 211; 212 and first; second substrate 211; 212 with resistive layer 221; 222 are respectively equipped with adhesion layer 23; this adhesion layer 23 can be heat-conducting glue; make first; second substrate 211; 212 with resistive layer 221; 222 can be by the connection that mutually combines of pressing mode; and this resistive layer 221; can further be respectively equipped with protective layer 28 on 222; as shown in Figure 3; this protective layer 28 can be epoxy resin (Epoxy Resin) or silicones (Silicone Resin) or Polyimide resin (Polyimide Resin), can be with resistive layer 221; 222 surfaces cover respectively so that the effect of protection to be provided.
Be illustrated in figure 4 as the 3rd embodiment of the present utility model; this multi-layered type current sensing component 2 includes at least: first substrate 211 and two resistive layers 221; 222; each resistive layer 221; 222 be located at respectively first substrate 211 on; lower surface; and two resistive layers 221; 211 of 222 and first substrates are respectively equipped with adhesion layer 23; resistive layer 221 both end sides of these first substrate, 211 upper surfaces are respectively equipped with two first electrode layers 241 that separate; on each first electrode layer 241 and be provided with conductive layer 251; 252; make integral multi-layered type current sensing component 2 can constitute monolateral use, and this resistive layer 221; can further be respectively equipped with protective layer 28 on 222.
Be illustrated in figure 5 as the 4th embodiment of the present utility model; this multi-layered type current sensing component 2 includes at least: first substrate 211 and two resistive layers 221; 222; each resistive layer 221; 222 be located at respectively first substrate 211 on; lower surface; and two resistive layers 221; 211 of 222 and first substrates are respectively equipped with adhesion layer 23; resistive layer 221 both end sides of these first substrate, 211 upper surfaces are respectively equipped with two first electrode layers 241 that separate; resistive layer 222 both end sides of these first substrate, 211 lower surfaces then are respectively equipped with two the second electrode lays 242 that separate; on each first electrode layer 241 and be provided with conductive layer 251; 252 and each the second electrode lay 242 on also be provided with conductive layer 251; 252; make integral multi-layered type current sensing component 2 can constitute bilateral use, and this resistive layer 221; can further be respectively equipped with protective layer 28 on 222.
What deserves to be mentioned is that the utility model has technology to have following advantage compared to habit:
1, utilizes the design of at least two or above parallel circuits that resistive layer forms, needn't additionally increase the thickness of resistive layer, can reach the resistance value of this current sensing component of reduction easily.
2, do not need to increase extra etch process, can form low-impedance multi-layered type current sensing component, simplify processing procedure and reduced etched cost.
3, this substrate and resistive layer form by pressing, and it is thicker that this resistive layer can form relative thickness, make the structure of integral multi-layered type current sensing component can form Low ESR, and then can anti-high power and high electric current.
4, be provided with heat-conducting glue between this substrate and resistive layer, the thermal source that resistive layer work can be produced can be sent to substrate via this heat-conducting glue, and is contacted with air and thermal source is left by substrate, to keep the task performance of this resistive layer.
5, this substrate can be ceramic substrate, can further quicken leaving of thermal source.
As mentioned above, the utility model provides another preferable feasible multi-layered type current sensing component structure, so offer the application of novel patent in accordance with the law; Yet, above implementation and graphic shown in, be the utility model preferred embodiment, be not to limit to the utility model with this, be with, approximate with structure of the present utility model, device, feature etc. such as, identical, all should belong to of the present utility model founding within purpose and the claim.
Claims (10)
1, a kind of multi-layered type current sensing component structure is characterized in that, this multi-layered type current sensing component includes at least:
At least one or above substrate are provided with adhesion layer between each substrate;
At least two or above resistive layer, this resistive layer are located at this substrate another surface with respect to adhesion layer respectively, and are provided with adhesion layer between this resistive layer and substrate;
At least two electrode layers that separate, this electrode layer is located at the both end sides of this resistive layer respectively.
2, multi-layered type current sensing component structure according to claim 1 is characterized in that this substrate is a ceramic substrate.
3, multi-layered type current sensing component structure according to claim 1 is characterized in that this adhesion layer is a heat-conducting glue.
4, multi-layered type current sensing component structure according to claim 1 is characterized in that this resistive layer is provided with protective layer.
5, as multi-layered type current sensing component structure as described in the claim 4, it is characterized in that this protective layer is epoxy resin or silicones or Polyimide resin.
6, multi-layered type current sensing component structure according to claim 1, it is characterized in that, this multi-layered type current sensing component structure is provided with two resistive layers, this two resistive layer is located at another surface with respect to adhesion layer of this substrate respectively, and the resistive layer both end sides of this upper surface is respectively equipped with two first electrode layers that separate.
As multi-layered type current sensing component structure as described in the claim 6, it is characterized in that 7, the resistive layer both end sides of this lower surface then is respectively equipped with two the second electrode lays that separate.
8, as multi-layered type current sensing component structure as described in the claim 7, it is characterized in that, be respectively equipped with conductive layer on first, second electrode layer.
9, as multi-layered type current sensing component structure as described in the claim 8, it is characterized in that this conductive layer is extended to the surface of the second electrode lay towards the side of each substrate by the surface of first electrode layer.
10, multi-layered type current sensing component structure according to claim 1, it is characterized in that, this multi-layered type current sensing component structure is provided with first, second substrate, and wherein a resistive layer is located at first upper surface of base plate, and another resistive layer then is located at the lower surface of second substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007203102290U CN201117381Y (en) | 2007-12-05 | 2007-12-05 | Multiple layer-type current sensing component structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007203102290U CN201117381Y (en) | 2007-12-05 | 2007-12-05 | Multiple layer-type current sensing component structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201117381Y true CN201117381Y (en) | 2008-09-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007203102290U Expired - Lifetime CN201117381Y (en) | 2007-12-05 | 2007-12-05 | Multiple layer-type current sensing component structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201117381Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354590A (en) * | 2011-09-15 | 2012-02-15 | 南京萨特科技发展有限公司 | Precision current sensing element and manufacturing method thereof |
| CN108777199A (en) * | 2018-06-15 | 2018-11-09 | 深圳市业展电子有限公司 | A kind of high-power antisurge alloy sheet resistance of two-sided resistive layer structure |
-
2007
- 2007-12-05 CN CNU2007203102290U patent/CN201117381Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354590A (en) * | 2011-09-15 | 2012-02-15 | 南京萨特科技发展有限公司 | Precision current sensing element and manufacturing method thereof |
| CN102354590B (en) * | 2011-09-15 | 2013-03-27 | 南京萨特科技发展有限公司 | Precision current sensing element and manufacturing method thereof |
| CN108777199A (en) * | 2018-06-15 | 2018-11-09 | 深圳市业展电子有限公司 | A kind of high-power antisurge alloy sheet resistance of two-sided resistive layer structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160822 Address after: 529100 Guangdong Province, Jiangmen City Xinhui District new wealth green electroplating base second 202 third, fourth Patentee after: Jiangmen City Jun Wei Electronic Technology Co., Ltd. Address before: Hsinchu City, Taiwan Chinese Niu Po Road 247 Lane 8 Patentee before: Yan Qiongzhang |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080917 |