CN102903467B - There is micro-resistive element and the manufacture method thereof of flexible material layer - Google Patents
There is micro-resistive element and the manufacture method thereof of flexible material layer Download PDFInfo
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- CN102903467B CN102903467B CN201110214863.5A CN201110214863A CN102903467B CN 102903467 B CN102903467 B CN 102903467B CN 201110214863 A CN201110214863 A CN 201110214863A CN 102903467 B CN102903467 B CN 102903467B
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Abstract
The present invention, about a kind of micro-resistive element with flexible material layer, comprises a resistive layer, a flexible material layer and an electrode layer.Flexible material layer is positioned at above this resistive layer.Electrode layer has and to be positioned at below this resistive layer and the first electrode section be separated from each other and the second electrode section.In addition, the present invention more provides the above-mentioned manufacture method with micro-resistive element of flexible material layer.The present invention need not adopt the substrate made by ceramic material, can be more unrestricted in making, can reduce its size further.
Description
Technical field
The present invention, about micro-resistive element, is particularly to micro-resistive element with flexible material layer.
Background technology
Along with the sustainable development of electronic circuit technology, the stability requirement for the resistance value of resistive element is increased day by day.The performances such as the temperature coefficient of resistance (TemperatureCoefficientofResistance, TCR) of traditional wafer resistor element cannot meet the requirement of high stability gradually, cause it to be restricted in application.
In order to promote the heat stability of the resistance value of resistive element; as shown in Figure 1; a kind of known micro-resistive element 10; there is the resistive layer 12, that substrate 11, that a ceramic material makes is positioned at the lower surface of substrate 11 be positioned at the copper foil layer 13 of the upper surface of substrate 11, lay respectively at the end electrode 14 at the two ends of substrate 11, and one is positioned at protective layer 15 on copper foil layer 13.By the copper foil layer 13 that thermal diffusivity is good, the auxiliary heat energy of micro-resistive element when operating that dissipates, to reach the object of the operating power promoting micro-resistive element.
But under electronic installation continues to pursue compact trend, micro-resistive element certainly will follow this trend, towards the development of less size.But the substrate of above-mentioned micro-resistive element, adopts made by ceramic material, because ceramic material belongs to firmly crisp, fragilely to split man-hour adding, be therefore difficult to make micro-resistive element further minification.
In addition, be usually used in adhesive base plate 11 in the past and usually contain glass material with the glue material of resistive layer 12 or copper foil layer 13, to provide preferably supportive after its sclerosis, but do not have pliability after curing due to glass material, make this micro-resistive element be restricted in application yet.Further, the thermal diffusivity of glass material is poor, and also block heat is transmitted towards resistive layer 12 or copper foil layer 13 by substrate 11, the operating power of the micro-resistive element of unfavorable lifting.
Summary of the invention
An object of the present invention, is to provide a kind of micro-resistive element, need not adopts the substrate made by ceramic material, can reduce its size further.
In order to reach above-mentioned purpose, micro-resistive element with flexible material layer of the present invention, comprises a resistive layer, a flexible material layer and an electrode layer.Flexible material layer is positioned at above this resistive layer.Electrode layer has and to be positioned at below this resistive layer and the first electrode section be separated from each other and the second electrode section.
The manufacture method with micro-resistive element of flexible material layer provided by the invention, comprises: provide a resistive layer; One flexible material laminating is bonded to above this resistive layer; And an electrode layer is formed at below this resistive layer, this electrode layer has the first electrode section and the second electrode section that are separated from each other.
In addition, provided by the invention another has the manufacture method of micro-resistive element of flexible material layer, comprises: provide the flexible material layer and a resistive layer that are directly bonded with each other; And an electrode layer is formed at below this resistive layer, this electrode layer has the first electrode section and the second electrode section that are separated from each other.
Beneficial effect of the present invention is, need not adopt the substrate made by ceramic material, can be more unrestricted in making, can reduce its size further.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Accompanying drawing explanation
Fig. 1 is the generalized section of known micro-resistive element;
Fig. 2 is the cutaway view of the first embodiment of the micro-resistive element of the present invention;
Fig. 3 is the cutaway view of the second embodiment of the micro-resistive element of the present invention;
Fig. 4 is the cutaway view of the 3rd embodiment of the micro-resistive element of the present invention;
Fig. 5 is the cutaway view of the 4th embodiment of the micro-resistive element of the present invention;
Fig. 6 A to Fig. 6 G is each step schematic diagram of the manufacture method of the micro-resistive element of the present invention; And
Fig. 7 A to Fig. 7 E is each step schematic diagram of another manufacture method of the micro-resistive element of the present invention.
Wherein, Reference numeral
10 micro-resistive elements
11 substrates
12 resistive layers
13 copper foil layers
14 end electrodes
15 protective layers
100 flexible material layers
110 resistive layers
111 breach
120 electrode layers
121 first electrode section
122 second electrode section
126 first outer layers
127 second outer layers
130 glue-lines
140 first protective layers
150 second protective layers
160 metal levels
161 grooves
162 first sheet metals
164 second sheet metals
170 fractal films
20 micro-resistive elements
30 micro-resistive elements
40 micro-resistive elements
50 micro-resistive elements
Embodiment
Below in conjunction with the drawings and specific embodiments, technical solution of the present invention is described in detail, further to understand object of the present invention, scheme and effect, but not as the restriction of claims protection range of the present invention.
Referring to Fig. 2, is the first embodiment of micro-resistive element of the present invention.This micro-resistive element 20 mainly includes a resistive layer 110, the flexible material layer 100, be positioned at above resistive layer 110 and is positioned at electrode layer 120 below resistive layer 110, and one in order to bind the glue-line 130 to the lower surface of flexible material layer 100 by resistive layer 110.
Resistive layer 110 is monel, made by nichrome, ferrochrome or cupromanganese.In the present embodiment, resistive layer 110 is that monel sheet material between 50 ~ 150 μm illustrates for thickness.Resistive layer 110 can be a complete rectangular sheet, or, it more can be formed with perforate or the groove of given shape, make that there is default resistance value.
The material of flexible material layer 100 is polyimides (Polyimide, or polyethylene terephthalate (polyethyleneTerephthalate PI), etc. PET) flexible materials that chemical stability is good, its thickness can between 12 ~ 45 μm.
The material of glue-line 130 can be epoxy resin or acryl resin etc., and thickness is about 13 ~ 102 μm.
Electrode layer 120 includes one first electrode section 121 and one second electrode section 122 of the two opposite sides being arranged at resistive layer 110 lower surface.The material of the first electrode section 121 and the second electrode section 122 is copper or copper alloy.In addition, micro-resistive element of the present embodiment can comprise one first outer layer 126 of coated first electrode section 121 further, and one second outer layer 127 of coated second electrode section 122, for welding with other outer members.First outer layer 126 and the second outer layer 127 can comprise the single or multiple lift soldering-tin layer that techniques such as utilizing plating, sputter is formed, such as nickel dam and tin layers.
In order to avoid resistive layer 110 is subject to pollution or the oxidation of environment, can on the lower surface of resistive layer 110, and the position between the first electrode section 121 and the second electrode section 122, cover the first protective layer 140.In addition, micro-resistive element 20 of the present embodiment more can cover one second protective layer 150 on the upper surface of flexible material layer 100.The material of the first protective layer 140 and the second protective layer 150 can be epoxy resin or acryl resin.
Because micro-resistive element of the present invention does not have unmanageable ceramic substrate, it can be more unrestricted in making, can reduce its size further.In addition, because flexible material layer 100 has pliability, with the use of glue-line 130 also there is pliability, make micro-resistive element 20 entirety can obtain preferably pliability, because this increasing its applicable scope.
Further, also because flexible material layer 100 easily makes and processing, thinner thickness can be reached, also make micro-resistive element 20 of the present invention can have lower thermal impedance.Glue-line 130 of the present invention also owing to need not adopt glass material, has preferably thermal conduction characteristic.
Referring to Fig. 3, is the second embodiment of micro-resistive element of the present invention, with the difference of the first embodiment be in, micro-resistive element 30 of the present embodiment more comprises the metal level 160 be interposed between flexible material layer 100 and the second protective layer 150.The better thermal conduction characteristic of mat metal level 160, improves the radiating effect of micro-resistive element 30.In the present embodiment, metal level 160 can be copper or the copper alloy of thickness 8 ~ 35 μm, or other preferably metal materials that dispel the heat.
Refer to Fig. 4; for micro-resistive element 40 of the third embodiment of the present invention; with the difference of the second embodiment be in, micro-resistive element 40 metal level be interposed between flexible material layer 100 and the second protective layer 150 of the present embodiment is one first sheet metal 162 and one second sheet metal 164 be separated from each other.The shape of the first sheet metal 162 and the second sheet metal 164 is not limit, can according to designed by actual radiating requirements.In the present embodiment, the second protective layer 150 covers the first sheet metal 162 and the second sheet metal 164 simultaneously, and inserts the region between the first sheet metal 162 and the second sheet metal 164.During actual enforcement, the second protective layer 150 also only can insert the region between the first sheet metal 162 and the second sheet metal 164, and does not cover the first sheet metal 162 and the second sheet metal 164.The material of the first sheet metal 162 and the second sheet metal 164 can be copper or copper alloy, and thickness can between 8 μm to 35 μm.
Refer to Fig. 5, for the 4th embodiment of micro-resistive element of the present invention, with the difference of the first embodiment be in, micro-resistive element 50 of the present embodiment does not have the glue-line in order to resistive layer 110 to be binded the lower surface to flexible material layer 100, and resistive layer 110 directly engages with flexible material layer 100.
Below, the manufacture method of micro-resistive element of the invention described above is described in detail in detail.Consult Fig. 6 A to Fig. 6 G, first, as shown in Figure 6A, provide a flexible material layer 100, and a glue-line 130.Flexible material layer 100 upper surface is attached with a metal level 160.Glue-line 130 is attached on a fractal film 170, when being attached to after on flexible material layer 100 by glue-line 130, fractal film 170 can be removed.Then, as shown in Figure 6B, flexible material layer 100 is conformed on resistive layer 110 by cementing layer 130, and hot pressing flexible material layer 100 and resistive layer 110, make flexible material layer 100 and resistive layer 110 mat cementing layer 130 close adhesion, formation one combined plate body as shown in Figure 6 C.
Then, as Fig. 6 D, etching is carried out to resistive layer 110 and forms breach 111, in order to the resistance value of adjusting resistance layer 110.Further, etching is carried out to metal level 160 and form groove 161, to form two the first sheet metal 162 and the second sheet metals 164 be separated from each other.
Then, as illustrated in fig. 6e, by modes such as plating, pressing or welding, first electrode section 121 and the second electrode section 122 with conducting function are formed at two opposition sides of the lower surface of resistive layer 110.
Then, as fig 6 f illustrates, the lower surface of the resistive layer 110 between the first electrode section 121 and the second electrode section 122 forms the first protective layer 140, is subject to environmental pollution or oxidation to avoid resistive layer 110.Further, more the second protective layer 150 can be formed on the upper surface of this flexible material layer 100, to provide support the intensity of micro-resistive element further.
Finally, as shown in Figure 6 G, form the first outer layer 126 and the second outer layer 127 of coated first electrode section 121 and the second electrode section 122 respectively, with the Bonding strength increasing the first electrode section 121 and the second electrode section 122 and the weld strength strengthened between micro-resistive element and circuit board.
Specifically in above-mentioned manufacture method, flexible material layer 100 provided at the beginning, its upper surface is attached with a metal level 160.During actual enforcement, also only can retain flexible material layer 100 itself and carry out above-mentioned manufacture method.When having metal level 160, the manufacture method of the present embodiment can produce micro-resistive element of Fig. 3 or Fig. 4.When not having metal level 160, the manufacture method of the present embodiment can produce micro-resistive element of Fig. 2.
As shown in Fig. 7 A to Fig. 7 E, it is another manufacture method of micro-resistive element of the present invention.As shown in Figure 7 A, the flexible material layer 100 providing directly to be bonded with each other and resistive layer 110.Not there is between flexible material layer 100 and resistive layer 110 glue-line in order to both bondings.First kind of way, can flexible material layer 100 be directly formed on resistive layer 110, such as, first the flexible material of liquid state be coated with or be printed on resistive layer 110, then, make this liquid flexible material solidification, to form the flexible material layer 100 be attached on resistive layer 110.The second way, then can be formed on flexible material layer 100 with film build method by resistive layer 110, such as, thick film and thin-film technique can be adopted to be formed on flexible material layer 100 by resistive layer 110.
Then, as shown in Figure 7 B, by modes such as plating, pressing or welding, first electrode section 121 and the second electrode section 122 with conducting function are formed at two opposition sides of the lower surface of resistive layer 110.Further, in the present embodiment, more on flexible material layer 100, metal level 160 is formed.It should be noted that, the object of metal level 160 improves the thermal diffusivity of micro-resistive element, and visual actual demand is removed.
As seen in figure 7 c, etching is carried out to resistive layer 110 and form breach 111, in order to the resistance value of adjusting resistance layer 110.Further, etching is carried out to metal level 160 and form groove 161, to form two the first sheet metal 162 and the second sheet metals 164 be separated from each other.
As illustrated in fig. 7d, the lower surface of the resistive layer 110 between the first electrode section 121 and the second electrode section 122 forms the first protective layer 140, is subject to environmental pollution or oxidation to avoid resistive layer 110.Further, more the second protective layer 150 can be formed on the upper surface of this flexible material layer 100, to provide support the intensity of micro-resistive element further.
As seen in figure 7e, form the first outer layer 126 and the second outer layer 127 of coated first electrode section 121 and the second electrode section 122 respectively, with the Bonding strength increasing the first electrode section 121 and the second electrode section 122 and the weld strength strengthened between micro-resistive element and circuit board.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (15)
1. there is a micro-resistive element for flexible material layer, it is characterized in that, comprise:
One resistive layer;
One flexible material layer, is positioned at above this resistive layer, and this flexible material thickness is between 12 ~ 45 μm;
One electrode layer, has and to be positioned at below this resistive layer and the first electrode section be separated from each other and the second electrode section;
One metal level, be arranged on this flexible material layer, this metal level and this electrode layer insulate; And
One second protective layer, is positioned on this metal level.
2. there is micro-resistive element of flexible material layer as claimed in claim 1, it is characterized in that, more comprising the glue-line for this resistive layer being fitted in this flexible material layer.
3. have micro-resistive element of flexible material layer as claimed in claim 2, it is characterized in that, the material of this glue-line comprises epoxy resin or acryl resin.
4. have micro-resistive element of flexible material layer as claimed in claim 1, it is characterized in that, this metal level comprises one first sheet metal disconnected from each other and one second sheet metal.
5. have micro-resistive element of flexible material layer as claimed in claim 1, it is characterized in that, the material of this flexible material layer is polyimides or polyethylene terephthalate.
6. have micro-resistive element of flexible material layer as claimed in claim 1, it is characterized in that, this resistive layer is monel, nichrome, ferrochrome or cupromanganese.
7. there is a manufacture method for micro-resistive element of flexible material layer, it is characterized in that, comprise:
One resistive layer is provided;
One flexible material laminating is bonded to above this resistive layer;
Be formed at by one electrode layer below this resistive layer, this electrode layer has the first electrode section and the second electrode section that are separated from each other;
Be arranged at by one metal level on this flexible material layer, this metal level and this electrode layer insulate;
One second protective layer is formed on this metal level;
Wherein, this flexible material thickness is between 12 ~ 45 μm.
8. there is the manufacture method of micro-resistive element of flexible material layer as claimed in claim 7, it is characterized in that, utilize a glue-line that this flexible material layer is fitted in this resistive layer.
9. have the manufacture method of micro-resistive element of flexible material layer as claimed in claim 8, it is characterized in that, the material of this glue-line is epoxy resin or acryl resin.
10. have the manufacture method of micro-resistive element of flexible material layer as claimed in claim 7, it is characterized in that, this metal level comprises one first sheet metal disconnected from each other and one second sheet metal.
11. manufacture methods as claimed in claim 7 with micro-resistive element of flexible material layer, it is characterized in that, the material of this flexible material layer is polyimides or polyethylene terephthalate.
12. 1 kinds of manufacture methods with micro-resistive element of flexible material layer, is characterized in that, comprise:
The flexible material layer and a resistive layer that are directly bonded with each other are provided;
Be arranged on by one metal level on this flexible material layer, this metal level and electrode layer insulate;
One second protective layer is formed on this metal level; And
Be formed at by one electrode layer below this resistive layer, this electrode layer has the first electrode section and the second electrode section that are separated from each other;
Wherein, this flexible material thickness is between 12 ~ 45 μm.
13. manufacture methods as claimed in claim 12 with micro-resistive element of flexible material layer, is characterized in that, this flexible material layer utilizes printing or coating to be directly formed on this resistive layer and obtains through overcure.
14. manufacture methods as claimed in claim 12 with micro-resistive element of flexible material layer, it is characterized in that, this resistive layer is formed on flexible material layer with thick-film technique or thin-film technique.
15. manufacture methods as claimed in claim 12 with micro-resistive element of flexible material layer, it is characterized in that, the material of this flexible material layer is polyimides or polyethylene terephthalate.
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| CN201110214863.5A CN102903467B (en) | 2011-07-29 | 2011-07-29 | There is micro-resistive element and the manufacture method thereof of flexible material layer |
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| CN102903467B true CN102903467B (en) | 2016-04-06 |
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| CN104376938B (en) * | 2013-08-13 | 2018-03-13 | 乾坤科技股份有限公司 | Resistance device |
| CN105590712A (en) * | 2014-11-15 | 2016-05-18 | 旺诠股份有限公司 | Manufacturing method of micro-impedance resistor and the micro-impedance resistor |
| CN106298116B (en) * | 2015-06-10 | 2018-07-06 | 旺诠股份有限公司 | The manufacturing method of metallic plate micro resistance |
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| CN1695209A (en) * | 2002-09-30 | 2005-11-09 | 通用电气公司 | Techniques for fabricating a resistor on a flexible base material |
| CN201087845Y (en) * | 2007-10-31 | 2008-07-16 | 颜琼章 | Wafer type electricity sensing component structure |
| CN101364463A (en) * | 2007-08-10 | 2009-02-11 | 斐成企业股份有限公司 | Chip resistor and preparation thereof |
| CN101369478A (en) * | 2008-06-20 | 2009-02-18 | 杨金波 | Nickel or nickel base alloy electrode sheet type resistor and method of producing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008072152A (en) * | 2007-12-06 | 2008-03-27 | Matsushita Electric Ind Co Ltd | Method of manufacturing rectangular chip resistor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1695209A (en) * | 2002-09-30 | 2005-11-09 | 通用电气公司 | Techniques for fabricating a resistor on a flexible base material |
| CN101364463A (en) * | 2007-08-10 | 2009-02-11 | 斐成企业股份有限公司 | Chip resistor and preparation thereof |
| CN201087845Y (en) * | 2007-10-31 | 2008-07-16 | 颜琼章 | Wafer type electricity sensing component structure |
| CN101369478A (en) * | 2008-06-20 | 2009-02-18 | 杨金波 | Nickel or nickel base alloy electrode sheet type resistor and method of producing the same |
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