CN213483500U - Low-resistance low-temperature-coefficient high-power thick film chip resistor - Google Patents
Low-resistance low-temperature-coefficient high-power thick film chip resistor Download PDFInfo
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- CN213483500U CN213483500U CN202022254815.6U CN202022254815U CN213483500U CN 213483500 U CN213483500 U CN 213483500U CN 202022254815 U CN202022254815 U CN 202022254815U CN 213483500 U CN213483500 U CN 213483500U
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Abstract
The invention relates to a thick film chip resistor with low resistance, low temperature coefficient and high power, which comprises a ceramic substrate, wherein a first resistor layer and a second resistor layer are arranged on a first surface of the ceramic substrate in an overlapping manner, the first resistor layer is arranged between the ceramic substrate and the second resistor layer, a front electrode layer is arranged on one side of the second resistor layer, which is opposite to the first resistor layer, a first protective layer is arranged in the region of the second resistor layer, the first protective layer is connected with the first front electrode layer and the second front electrode layer, a second protective layer and a third protective layer are sequentially laid on the first protective layer, and a nickel layer and a tin layer are sequentially laid on the first front electrode layer and the second front electrode layer. The resistance of the iron sheet resistor is reduced by adopting the first resistor layer and the second resistor layer for the resistor, so that the aim of lower resistance is fulfilled; the front electrode layer is positioned at two ends of the second resistor layer, so that the influence of temperature change on the resistance value is effectively stabilized; the protective layer adopts three layer construction can make the product more be favorable to the promotion of heat dissipation function and power.
Description
Technical Field
The utility model relates to a chip resistor especially relates to a low resistance low temperature coefficient high power thick film chip resistor.
Background
With the progress of science and technology, the development of the era and the requirements of people on various electronic products are continuously improved, diversified requirements are presented, a new development opportunity is brought to the thick film chip resistor, and particularly, higher requirements are provided for the resistance value, the temperature coefficient, the power index and the like of the thick film chip resistor by a client application end. At present, because the temperature coefficient index of a common thick film chip resistor in the existing industry is large and the power is low, the stability of the resistor is poor, and the requirements of people on the thick film chip resistor with lower resistance, smaller temperature coefficient and higher power cannot be met.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a thick film chip resistor with lower resistance and smaller temperature coefficient, and in order to realize the purpose, the utility model provides a high-power thick film chip resistor with low resistance and low temperature coefficient, which reduces the resistance by adopting a first resistor layer and a second resistor layer to the resistor, thereby achieving the purpose of lower resistance; the front electrode layer is positioned at two ends of the second resistor layer, so that the influence of temperature change on the resistance value is effectively stabilized; the protective layer adopts three layer construction can make the product more be favorable to the promotion of heat dissipation function and power.
The utility model adopts the technical proposal that: a thick film chip resistor with low resistance, low temperature coefficient and high power comprises a ceramic substrate, wherein the ceramic substrate comprises a front electrode layer, a first surface and a second surface, a first resistor layer and a second resistor layer are arranged on the first surface in an overlapping manner, the first resistor layer is arranged between the ceramic substrate and the second resistor layer, the front electrode layer is arranged on one side of the second resistor layer opposite to the first resistor layer and comprises a first front electrode layer and a second front electrode layer which are arranged at intervals, a first protective layer is arranged in the region of the second resistor layer between the first front electrode layer and the second front electrode layer, the first protective layer is connected with the first front electrode layer and the second front electrode layer, and a second protective layer and a third protective layer are sequentially laid on the first protective layer, and a nickel layer and a tin layer are sequentially laid on the first front electrode layer and the second front electrode layer.
Further, the second protection layer is coated on the upper surface of the first protection layer and the lap joint of the first protection layer and the front electrode layer.
Furthermore, a laser tangent line is arranged on the first resistor layer, the second resistor layer and the first protective layer and is connected to the second protective layer through the first resistor layer, the second resistor layer and the first protective layer by the ceramic substrate.
Furthermore, a first back electrode layer and a second back electrode layer are arranged on a second surface of the ceramic substrate at intervals, the first back electrode layer and the first front electrode layer are connected through a first side electrode layer, the second back electrode layer and the second front electrode layer are connected through a second side electrode layer, and the first side electrode layer and the second side electrode layer are arranged on the side surface of the ceramic substrate.
Furthermore, the nickel layer and the tin layer are arranged on the first front electrode layer, the second front electrode layer, the first back electrode layer, the second back electrode layer and the side electrode layer.
Further, the ceramic base is of a rectangular parallelepiped structure, the first surface and the second surface are two opposite surfaces of the ceramic base, the ceramic base further comprises a first side surface and a second side surface, the first front electrode layer is arranged on one side, close to the first side surface, of the first surface, the second front electrode layer is arranged on one side, close to the second side surface, of the first surface, and the first front electrode layer and the second front electrode layer are symmetrically arranged.
Furthermore, the first back electrode layer and the second back electrode layer are symmetrically arranged on two sides of the second surface.
Further, the thickness of the nickel layer is as follows: 3-10 μm, and the thickness of the tin layer is: 3 to 10 μm.
The utility model discloses produced beneficial effect includes: by adopting a special design mode (the first resistor layer and the second resistor layer) for the resistor, the resistance can be reduced, the aim of lower resistance can be fulfilled, and the product can have lower resistance (which can reach 10m omega); the front electrode layer adopts a design mode of being positioned at two ends of the second resistor layer, so that the influence of temperature change on resistance can be effectively stabilized, and the product has a better temperature coefficient (reaching +/-100 ppm/DEG C); the protective layer adopts three layer construction design mode (first protective layer + second protective layer + third protective layer), more is favorable to the heat dissipation function and the promotion of power of product like this, can make the product have better higher power (can reach about 2 times ordinary thick film resistor). The product with the process structure has the advantages of low manufacturing cost, low resistance, good temperature coefficient, high power, high reliability and strong load capacity, and simultaneously meets the application requirements of client application terminals on the high-power thick film chip resistor with low resistance and low temperature coefficient.
Drawings
Fig. 1 is the schematic diagram of the sectional structure of the high-power thick film chip resistor with low resistance and low temperature coefficient of the utility model.
Fig. 2 is a schematic structural diagram of the semi-finished product after step 1 of the present invention.
Fig. 3 is a schematic structural diagram of the semi-finished product after step 2 of the present invention.
Fig. 4 is a schematic structural diagram of the semi-finished product after step 3 of the present invention.
Fig. 5 is a schematic structural diagram of the semi-finished product after step 4 of the present invention.
Fig. 6 is a schematic structural diagram of the semi-finished product after step 5 of the present invention.
Fig. 7 is a schematic structural diagram of the semi-finished product after step 6 of the present invention.
Fig. 8 is a schematic structural diagram of the semi-finished product after step 7 of the present invention.
Fig. 9 is a schematic structural diagram of the semi-finished product after step 8 of the present invention.
Fig. 10 is a schematic structural diagram of the semi-finished product after step 9 of the present invention.
Fig. 11 is a schematic structural diagram of the semi-finished product after step 10 of the present invention.
Fig. 12 is a schematic structural diagram of the semi-finished product after step 11 of the present invention.
Fig. 13 is a schematic structural diagram of the finished product after step 12 of the present invention.
The following description is made with reference to the accompanying drawings:
01-ceramic matrix; 02-back electrode layer; 0201. First back electrode layer, 0202, second back electrode layer, 03-first resistor layer; 04-a second resist layer;
05-a front electrode layer; 0501. A first front electrode layer, 0502, a second front electrode layer, 06-a first protective layer; 07-radium cutting; 08-a second protective layer;
09-a third protective layer; 10-word layer; 11-a side electrode layer; 12-a nickel layer; 13-tin layer.
Detailed Description
The present invention is explained in further detail with reference to the drawings and the embodiments, but it should be understood that the scope of the present invention is not limited by the embodiments.
As shown in fig. 1, a thick film chip resistor with low resistance, low temperature coefficient and high power includes a ceramic substrate 01, two back electrode layers 02, a first back electrode layer 0201 and a second back electrode layer 0202, which are symmetrically printed on two sides of a second surface (back surface) of the ceramic substrate, a first resistor layer 03 printed on a first surface (front surface) of the ceramic substrate 01, a second resistor layer 04 printed on a surface of the first resistor layer 03, two front electrode layers 05, a first front electrode layer 0501 and a second front electrode layer 0502, which are symmetrically printed on two ends of a surface of the second resistor layer 04, a first protective layer 06 printed on a surface of the second resistor layer 04 between the first front electrode layer 0501 and the second front electrode layer 0502, laser cutting lines 07 arranged on the first resistor layer 03, the second resistor layer 04 and the first protective layer 06, and a second protective layer 08 printed on an upper surface of the first protective layer 06, the upper surface printing of second protective layer 08 has third protective layer 09, can effectively protect the resistor body and radium tangent line and more be favorable to the heat dissipation, the upper surface of third protective layer 09 is provided with word layer 10, the both ends head side of ceramic base 01 is provided with side electrode 11, and side electrode 11 makes back electrode layer 02 and front electrode layer 05 switch on, just nickel layer 12 has been plated on back electrode layer 02, front electrode layer 05 and the side electrode layer 11, tin layer 13 has been plated to the surface of nickel layer 12.
The resistor layer is formed by overlapping the first resistor layer 03 and the second resistor layer 04, so that the resistance of a product can be effectively reduced, and the power of the product can be improved.
The back electrode layer 02 and the front electrode layer 05 are made of silver materials with better heat dissipation performance, small temperature coefficient and lower and better resistivity.
The design mode that the front electrode layer 05 is located at the two ends of the second resistor layer 04 can effectively stabilize the influence of temperature change on the resistance value, and better meet the requirement of a client on the low-temperature coefficient chip resistor.
The resistor layer achieves specified resistance and precision through a special laser adjustment mode, and damage of laser cutting to the resistor is reduced better.
The second protective layer 08 and the third protective layer 09 are completely overlapped and made of resin insulating materials with the same specification, so that the third protective layer 09 completely covers the second protective layer 08, the resistor layer is further protected and has a better heat dissipation function, and the improvement of product power is facilitated.
The upper surface of the third protective layer 09 is covered with a character code layer for marking the resistance value of the resistor.
The side electrode is made of nickel-chromium alloy sputtered in vacuum, the first electrode and the second electrode are connected and conducted, and the nickel-chromium alloy material is low in cost and low in price.
The nickel layer 12 is electroplated to form a layer of metal nickel in a barrel plating mode, and the thickness of the nickel layer 12 is as follows: 3 to 10 μm.
The tin layer is electroplated to form a layer of metallic tin by adopting a barrel plating mode, and the thickness of the tin layer is as follows: 3 to 10 μm. A low resistance low temperature coefficient high power thick film chip resistor which characterized in that: the resistance value can reach 10m omega. The temperature coefficient of the thick film chip resistor with low resistance, low temperature coefficient and high power can reach +/-100 ppm/DEG C. The power of the thick film chip resistor with low resistance, low temperature coefficient and high power can be increased to about 2 times that of a common thick film resistor.
The ceramic base is the cuboid structure, first face and second face are two relative faces of ceramic base, ceramic base still includes first side and second side, first front electrode layer sets up the one side that is close to first side at first face, the setting of second front electrode layer is in the one side that first face is close to the second side, first front electrode layer and the symmetrical setting of second front electrode layer, first front electrode layer and the setting of second front electrode layer along the broadside of first face, electrode layer length is unanimous with the width of first face, first back electrode layer and the setting of second back electrode layer along the broadside of second face, the length of electrode layer is unanimous with the width of second face.
The utility model provides a low resistance low temperature coefficient high power thick film chip resistor realizes according to following step when the preparation:
step 1: first, as shown in fig. 2, silver paste is applied to both sides of the lower surface of the ceramic substrate 01 by a screen thick film symmetrical printing method, and then, firing is performed at a predetermined temperature, thereby forming a back electrode layer 02 on the lower surface of the ceramic substrate 01;
step 2: as shown in fig. 3, after step 1 is completed, a resist paste is applied by screen thick film printing on the upper surface of the ceramic substrate 01, and then, the paste is sintered at a predetermined temperature to form a first resist layer 03;
and step 3: as shown in fig. 4, after step 2 is completed, a layer of resistor paste is printed and coated on the surface of the first resistor layer 03 by a screen thick film printing method, and then sintering is performed at a specified temperature to form a second resistor layer 04, so that the resistance can be effectively reduced by adopting the resistor layer design with a secondary structure, and the resistance and the power can be reduced and increased more favorably;
and 4, step 4: as shown in fig. 5, after step 3 is completed, silver paste is applied to both sides of the surface of the second resist layer 04 by screen thick film symmetric printing, and then, firing is performed at a predetermined temperature, thereby forming front electrode layers 05 on both sides of the surface of the second resist layer 04;
and 5: as shown in fig. 6, after step 4 is completed, a layer of glass paste is printed and coated on the surface of the second resist layer 04 by a screen thick film printing method, and then, the glass paste is sintered at a predetermined temperature to form a first protective layer 06 as a protective resist layer;
step 6: as shown in fig. 7, after step 5 is completed, the first resistor layer 03 and the second resistor layer 04 are corrected to the resistance and precision required by the client application by using laser cutting, so as to form a laser cutting line 07;
and 7: as shown in fig. 8, after step 6 is completed, a resin paste is printed and coated on the surface of the first protective layer 06 by a screen printing method, and then dried at a predetermined temperature to form a second protective layer 08 as a protective resist layer;
and 8: as shown in fig. 9, after step 7 is completed, a layer of resin paste is printed and coated on the surface of the second protective layer 08 by a screen printing method, and then the second protective layer is dried at a predetermined temperature to form a third protective layer 09.
And step 9: as shown in fig. 10, after step 8 is completed, a layer of code paste is printed and coated on the upper surface of the third protective layer 09 at a central position by a screen thick film printing method, and then, the printing is performed at a predetermined temperature to form a code layer 10 as a marker resistance;
step 10: as shown in fig. 11, after step 9 is completed, a side electrode layer 11 for conducting the back electrode layer 02 and the front electrode layer 05 is formed on the two end side surfaces of the product by adopting a true nickel chromium plating alloy material method;
step 11: as shown in fig. 12, after step 10 is completed, a layer of Ni (nickel layer) is electroplated on the surfaces of the first electrode layer 02, the second electrode layer 03 and the side electrode layer 11 of the product, wherein the thickness of the Ni layer is as follows: 3-10 μm to form a nickel layer 12;
step 12: as shown in fig. 13, finally, a layer of Sn (tin layer) is plated on the Ni (nickel layer) of the product, and the thickness of the Sn layer is: 3 to 10 μm, forming a tin layer 13. Finally, the thick film chip resistor with low resistance, low temperature coefficient and high power is completed.
To sum up, the utility model provides a high power thick film chip resistor with low resistance and low temperature coefficient, which can reduce the resistance value by adopting a special design mode (the first resistor layer and the second resistor layer) to achieve the purpose of lower resistance value, and can make the product have lower resistance value (up to 10m omega); the front electrode layer adopts a design mode of being positioned at two ends of the second resistor layer, so that the influence of temperature change on resistance can be effectively stabilized, and the product has a better temperature coefficient (reaching +/-100 ppm/DEG C); the protective layer adopts a three-layer structure design mode (a first protective layer, a second protective layer and a third protective layer), so that the heat dissipation function and the power of the product are improved, the product can have better and higher power (about 2 times of that of a common thick film resistor), the quality completely meets the JIS standard of the electronic industry, and more extensive application can be brought to the low-resistance low-temperature coefficient high-power thick film chip resistor.
The foregoing has outlined rather broadly the principles, features and advantages of the present invention in order that the detailed description of the invention that follows may be better understood. The technical personnel of this trade should understand, the utility model discloses do not receive the restriction of above-mentioned embodiment, under the prerequisite that does not deviate from the utility model discloses spirit and scope, the utility model discloses still can have various changes and improvement, these changes and improvement all fall into the protection the utility model discloses the scope, nevertheless do not break away from the technical scheme's of the utility model discloses the basis the technical essence of the utility model is to any simple modification, the equivalent change and the modification that above embodiment was done, all still belong to the utility model discloses technical scheme's scope. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A low resistance low temperature coefficient high power thick film chip resistor which characterized in that: comprises a ceramic substrate, the ceramic substrate comprises a first surface for arranging a front electrode layer and a second surface for arranging a back electrode layer, a first resistor layer and a second resistor layer are arranged on the first surface in an overlapping manner, the first resistor layer is arranged between the ceramic substrate and the second resistor layer, the front electrode layer is arranged on one side of the second resistor layer opposite to the first resistor layer and comprises a first front electrode layer and a second front electrode layer which are arranged at intervals, a first protective layer is arranged in the region of the second resistor layer between the first front electrode layer and the second front electrode layer, the first protective layer is connected with the first front electrode layer and the second front electrode layer, and a second protective layer and a third protective layer are sequentially laid on the first protective layer, and a nickel layer and a tin layer are sequentially laid on the first front electrode layer and the second front electrode layer.
2. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 1, wherein: the second protective layer is coated on the upper surface of the first protective layer and the lap joint of the first protective layer and the front electrode layer.
3. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 1, wherein: the laser cutting line is arranged on the first resistor layer, the second resistor layer and the first protective layer and is connected to the second protective layer through the first resistor layer, the second resistor layer and the first protective layer by the ceramic substrate.
4. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 1, wherein: the ceramic substrate comprises a ceramic substrate, wherein a first back electrode layer and a second back electrode layer are arranged on a second surface of the ceramic substrate at intervals, the first back electrode layer and the first front electrode layer are connected through a first side electrode layer, the second back electrode layer and the second front electrode layer are connected through a second side electrode layer, and the first side electrode layer and the second side electrode layer are arranged on the side surface of the ceramic substrate.
5. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 4, wherein: the nickel layer and the tin layer are arranged on the first front electrode layer, the second front electrode layer, the first back electrode layer, the second back electrode layer and the side electrode layer.
6. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 1, wherein: the ceramic base is of a cuboid structure, the first surface and the second surface are two opposite surfaces of the ceramic base, the ceramic base further comprises a first side surface and a second side surface, the first front electrode layer is arranged on one side, close to the first side surface, of the first surface, the second front electrode layer is arranged on one side, close to the second side surface, of the first surface, and the first front electrode layer and the second front electrode layer are symmetrically arranged.
7. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 4, wherein:
the first back electrode layer and the second back electrode layer are symmetrically arranged on two sides of the second surface.
8. The low resistance, low temperature coefficient and high power thick film chip resistor of claim 1, wherein: the thickness of the nickel layer is as follows: 3-10 μm, and the thickness of the tin layer is: 3 to 10 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022254815.6U CN213483500U (en) | 2020-10-12 | 2020-10-12 | Low-resistance low-temperature-coefficient high-power thick film chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022254815.6U CN213483500U (en) | 2020-10-12 | 2020-10-12 | Low-resistance low-temperature-coefficient high-power thick film chip resistor |
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| Publication Number | Publication Date |
|---|---|
| CN213483500U true CN213483500U (en) | 2021-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022254815.6U Active CN213483500U (en) | 2020-10-12 | 2020-10-12 | Low-resistance low-temperature-coefficient high-power thick film chip resistor |
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| CN (1) | CN213483500U (en) |
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- 2020-10-12 CN CN202022254815.6U patent/CN213483500U/en active Active
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