CN210349483U - Low-resistance resistor - Google Patents
Low-resistance resistor Download PDFInfo
- Publication number
- CN210349483U CN210349483U CN201921342698.XU CN201921342698U CN210349483U CN 210349483 U CN210349483 U CN 210349483U CN 201921342698 U CN201921342698 U CN 201921342698U CN 210349483 U CN210349483 U CN 210349483U
- Authority
- CN
- China
- Prior art keywords
- resistance
- layer
- resistance layer
- substrate
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
The utility model relates to a low resistance resistor, include the base plate, be located the electrode at base plate both ends, two sides and both sides face all are equipped with the resistance layer about the base plate, insulating layer between base plate and the resistance layer, the both ends of four sides resistance layer all are connected with the end electrode, both sides resistance layer is parallelly connected around with above-mentioned both sides resistance layer, be equipped with the protective layer outside the resistance layer. When the power-on, the electric current passes through from four resistance layers, is equivalent to four circuits parallelly connected, and the electric current through whole chip resistor is distributed four resistance layers and passes through, and the electric current through every resistance layer all reduces, and the heat distribution is more even, and the heat dissipation is faster, and the resistance of whole chip resistor is less than single resistance layer resistance, can reduce the product resistance.
Description
Technical Field
The utility model relates to an electronic component field, in particular to low resistance resistor.
Background
The resistor has the advantages of small volume, light weight, high electrical performance reliability, low assembly cost, high mechanical strength, excellent high-frequency characteristic and the like, the minimum precision of the resistor can reach +/-0.01% of ultra-precision, and the resistor is widely applied to the fields of computers, mobile phones, medical electronic products, unmanned aerial vehicles, tablet computers and the like. In recent years, applications of power supply systems are moving toward higher power and smaller size, so that resistors are required to have lower resistance values and the ability to carry larger currents, and therefore, low resistance and high power are the trend of development of resistors.
The resistance of the resistor element is generally related to the material, length, cross-sectional area and temperature, and the chip resistor with a single resistance layer structure is limited by the manufacturing process and the size of the resistor body in the manufacturing process, so that the ultra-low resistance value is difficult to achieve. The surface mount resistor product generally has three main stream types of a thick film resistor, an alloy film resistor and a pure alloy resistor, and is divided according to a covering resistance segment: the thick film resistor covers a resistance section of 10-1000 m omega, the alloy film resistor covers a resistance section of 1-500 m omega, and the pure alloy resistor covers a resistance section of 0.5-200 m omega, so that the resistor product still has a larger design space in an ultra-low resistance section.
In the manufacturing process of the existing resistor, the most common processes are: the ceramic is used as a substrate, a single-layer resistance layer structure is adopted, electrodes are printed, a protective layer is printed, and finally a metal layer is electroplated. The product produced by the process can meet relevant requirements, but at least the following two defects still exist. The first point is as follows: the specific resistance circuit is sintered by etching, punching or laser, and the like, so that the sectional area of the current actually passed by the resistance layer is reduced, the heat is concentrated, and the power of the product is reduced; and a second point: the alloy film resistor with a single-layer resistance layer structure is limited by the size of a substrate, so that the effective length of current actually passed by the resistance layer is basically unchanged, and the ultralow resistance value is difficult to achieve.
In view of the above, a new solution is needed to solve the above problems.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: the utility model aims at overcoming the problem that the resistance of the resistor is difficult to reduce and the heat is concentrated in the prior art.
The technical scheme is as follows: in order to achieve the above object, the present invention provides a low resistance resistor, which can adopt the following technical solutions:
a low-resistance resistor comprises a substrate, two electrodes and a first resistance layer, wherein the two electrodes are respectively positioned on the electrodes at two ends of the substrate; and the two ends of the first resistance layer, the two ends of the second resistance layer, the two ends of the third resistance layer and the two ends of the fourth resistance layer are respectively connected with the two electrodes.
The first resistance layer, the second resistance layer, the third resistance layer and the fourth resistance layer are connected in parallel.
Further, the resistance value of the first resistance layer is the same as that of the second resistance layer; the resistance of the third resistance layer is the same as the resistance of the fourth resistance layer.
Furthermore, the resistance of the first resistance layer, the resistance of the second resistance layer, the resistance of the third resistance layer and the resistance of the fourth resistance layer are the same.
Further, the resistance value of the first resistance layer is the same as that of the second resistance layer; and protective layers are covered outside the third resistance layers.
Further, the substrate is a ceramic substrate, a PCB substrate or a flexible material substrate; and an insulating glue layer is respectively clamped between the first resistance layer, the second resistance layer, the third resistance layer and the fourth resistance layer and the substrate.
Furthermore, a nickel plating layer is arranged on the electrode, and a tin plating layer is arranged on the nickel plating layer; the total thickness of the substrate, the electrode, the tin coating and the tin coating is equal to the total thickness of the substrate, the first resistance layer, the second resistance layer and the protection layer.
Has the advantages that: compared with the prior art, the utility model provides a have the four sides resistive layer that first, second, third, fourth resistive layer formed among the low resistance resistor, the four sides resistive layer covers upper and lower two sides and the both sides face at the base plate respectively, and during the circular telegram, the electric current passes through from four resistive layers, is equivalent to four circuits parallelly connected, and the electric current through whole piece chip resistor is distributed four resistive layers and passes through, and the electric current through every resistive layer all reduces, according to joule law Q ═ I2RT, the calorific capacity of single resistance layer reduces greatly, through on heat-conduction to the base plate, the heat distributes more evenly, and the heat dissipation is faster, has greatly improved the bearing power of product. Next, the resistance values of the resistive layers on the upper and lower surfaces are identical and are denoted as R1,R2The resistance values of the front and rear resistive layers are identical and are marked as R3,R4According to the parallel formula of the resistors, the resistance value of the whole chip resistor is R1R2R3R4/(R1+R2+R3+R4) When R is1=R2=R3=R4And the resistance value of the whole chip resistor is 1/4 of that of a single resistor layer, so that the resistance value of the product is greatly reduced.
Drawings
Fig. 1 is a schematic structural diagram of a chip resistor provided in embodiment 1 of the present invention;
fig. 2 is a schematic view of an upper structure of a chip resistor provided in embodiment 1 of the present invention;
fig. 3 is a schematic front structural diagram of a chip resistor provided in embodiment 1 of the present invention;
fig. 4 is a schematic structural diagram of a chip resistor provided in embodiment 2 of the present invention;
fig. 5 is a schematic structural diagram of a chip resistor provided in embodiment 3 of the present invention.
In the figure: 1 — a first resistive layer; 2-a second resistive layer; 3-a third resistive layer; 4-a fourth resistive layer; 5-a ceramic substrate; 6, a protective layer; 7-copper electrode; 8-a conductive layer; 9-plating a nickel layer; 10-tin coating; 11-insulating glue; 12-a flexible material substrate; 13-PCB substrate.
Detailed Description
The embodiments of the present invention will be further explained with reference to the drawings.
Example 1: refer to fig. 1, 2 and 3.
A super low resistance high power resistor comprises a ceramic substrate 5, wherein a first resistance layer 1, a second resistance layer 2, a third resistance layer 3 and a fourth resistance layer 4 are respectively applied on the upper surface, the lower surface and the two side surfaces of the ceramic substrate 5, the resistance layers 1 and 3 can be connected with the ceramic substrate 5 in a pressing, printing or bonding mode, the resistance layers 3 and 4 can be connected with the ceramic substrate 5 in a vacuum sputtering, pressing or bonding mode, and a protection layer 6 is arranged outside the resistance layers, wherein in order to prevent the resistance layers 3 and 4 from being connected with the resistance layers 1 and 2 in series in a lap joint mode, the resistance layers 1 and 2 are firstly packaged and protected, and then the resistance layers 3 and 4 are applied on the front side surface and the rear side surface.
Two ends of the ultra-low resistance high-power resistor are provided with a copper electrode 7 and an end face conducting layer 8, and the end face conducting layer 8 and the copper electrode 7 are used as parts of the electrodes. The end face conductive layer 8 electrically connects the copper electrodes 7 on the upper and lower surfaces of the substrate and on both the front and rear surfaces.
The copper electrode is provided with a nickel plating layer 9, and the nickel plating layer 9 is provided with a tin plating layer 10. The total thickness of the ceramic substrate 5, the copper electrode 7, the tin-plated layer 9, and the tin-plated layer 10 is equal to the total thickness of the substrate 5, the first resistance layer 1, the second resistance layer 2, and the protective layer 6.
Example 2: refer to fig. 4.
A super low resistance high power resistor comprises a flexible material substrate 12, wherein a first resistance layer 1, a second resistance layer 2, a third resistance layer 3 and a fourth resistance layer 4 are respectively applied on the upper surface, the lower surface and the two side surfaces of the flexible material substrate 12, the resistance layers 1 and 3 can be connected with the flexible material substrate 12 in a pressing, printing or bonding mode, and an insulation glue layer 11 is arranged between the resistance layers and the flexible material substrate 12. The resistance layer 3 and the resistance layer 4 can be connected with the ceramic substrate 5 by vacuum sputtering, pressing or bonding, and the protection layer 6 is arranged outside the resistance layer, wherein, in order to prevent the resistance layer 3 and the resistance layer 4 from being connected with the resistance layer 1 and the resistance layer 2 in series, the resistance layer 1 and the resistance layer 2 are encapsulated and protected, and then the resistance layer 3 and the resistance layer 4 are applied on the front side and the back side.
Example 3: refer to fig. 5.
A super low resistance high power resistor comprises a PCB substrate 13, wherein a first resistance layer 1, a second resistance layer 2, a third resistance layer 3 and a fourth resistance layer 4 are respectively applied on the upper, lower and two side surfaces of the PCB substrate 13, the resistance layers 1 and 3 can be connected with the PCB substrate 13 in a pressing, printing or bonding mode, the resistance layers 3 and 4 can be connected with the PCB substrate 13 in a vacuum sputtering, pressing or bonding mode, and a protection layer 6 is arranged outside each resistance layer, wherein in order to prevent the resistance layers 3 and 4 from being connected with the resistance layers 1 and 2 in series, the resistance layers 1 and 2 are firstly packaged and protected, and then the resistance layers 3 and 4 are applied on the front and rear side surfaces.
In addition, the specific implementation methods and ways of the present invention are numerous, and the above description is only the preferred embodiment of the present invention. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be considered as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.
Claims (7)
1. A low-resistance resistor comprises a substrate, two electrodes and a first resistance layer, wherein the two electrodes are respectively positioned on the electrodes at two ends of the substrate; and the two ends of the first resistance layer, the two ends of the second resistance layer, the two ends of the third resistance layer and the two ends of the fourth resistance layer are respectively connected with the two electrodes.
2. A low resistance resistor according to claim 1, wherein: the first resistance layer, the second resistance layer, the third resistance layer and the fourth resistance layer are connected in parallel.
3. A low resistance resistor according to claim 1 or 2, wherein: the resistance value of the first resistance layer is the same as that of the second resistance layer; the resistance of the third resistance layer is the same as the resistance of the fourth resistance layer.
4. A low resistance resistor according to claim 3, wherein: the resistance of the first resistance layer, the resistance of the second resistance layer, the resistance of the third resistance layer and the resistance of the fourth resistance layer are the same.
5. A low resistance resistor according to claim 1 or 2, wherein: the resistance value of the first resistance layer is the same as that of the second resistance layer; and protective layers are covered outside the third resistance layers.
6. A low resistance resistor according to claim 1 or 2, wherein: the substrate is a ceramic substrate, a PCB substrate or a flexible material substrate; and an insulating glue layer is respectively clamped between the first resistance layer, the second resistance layer, the third resistance layer and the fourth resistance layer and the substrate.
7. A low resistance resistor according to claim 5, wherein: a nickel plating layer is arranged on the electrode, and a tin plating layer is arranged on the nickel plating layer; the total thickness of the substrate, the electrode, the tin coating and the tin coating is equal to the total thickness of the substrate, the first resistance layer, the second resistance layer and the protection layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921342698.XU CN210349483U (en) | 2019-08-19 | 2019-08-19 | Low-resistance resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921342698.XU CN210349483U (en) | 2019-08-19 | 2019-08-19 | Low-resistance resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210349483U true CN210349483U (en) | 2020-04-17 |
Family
ID=70175373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201921342698.XU Active CN210349483U (en) | 2019-08-19 | 2019-08-19 | Low-resistance resistor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN210349483U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110459373A (en) * | 2019-08-19 | 2019-11-15 | 南京隆特电子有限公司 | A kind of low-resistance resistor and manufacturing method |
-
2019
- 2019-08-19 CN CN201921342698.XU patent/CN210349483U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110459373A (en) * | 2019-08-19 | 2019-11-15 | 南京隆特电子有限公司 | A kind of low-resistance resistor and manufacturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4440911B2 (en) | Solid electrolytic capacitor | |
JP3073003U (en) | Surface mount type electric device | |
JPH11162708A (en) | Multi-layered conductive polymer positive temperature coefficient device | |
KR20180002478A (en) | Elastic electric terminal for metal case | |
CN104221482A (en) | High frequency signal transmission line and electronic apparatus | |
CN210349483U (en) | Low-resistance resistor | |
KR20050071330A (en) | Over-current protective device and manufacturing method thereof | |
CN103843077B (en) | Flat cable | |
US9735551B2 (en) | Surge absorber and manufacturing method thereof | |
KR20110081363A (en) | Conductive connector having an excellent elasticity and manufacturing method the same | |
KR20050005421A (en) | Anisotropic conductive sheet and its manufacturing method | |
CN210378636U (en) | Thick film chip resistor with wide-face back electrode | |
CN110459373A (en) | A kind of low-resistance resistor and manufacturing method | |
JP2021141323A (en) | Leadless stacked ceramic capacitor | |
CN109661102B (en) | Ceramic substrate circuit board and method for manufacturing the same | |
US9824798B2 (en) | Resistor element and method of manufacturing the same | |
KR101771836B1 (en) | Chip resistor and chip resistor assembly | |
CN217847574U (en) | Metal oxide varistor device | |
CN105070504B (en) | A kind of resistance capacitance coenosarc device | |
KR101701056B1 (en) | Capacitor component and board for mounting same | |
CN212849129U (en) | Novel conductive grounding structure | |
CN100448133C (en) | Overcurrent protector and its making method | |
CN208173321U (en) | Thermistor element | |
CN217363406U (en) | Printed circuit board assembly and electronic device | |
CN218041922U (en) | Circuit board assembly |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230612 Address after: Building 4, Jinpu Industrial Park, No. 107, Xintao Road, Zhengpugang New District, Ma'anshan, Anhui Province, 243000 Patentee after: Anhui Yuanxu Electronic Technology Development Co.,Ltd. Address before: No.6 Qingma Road, Nanjing, Jiangsu 210049 Patentee before: Nanjing lont Electronics Co.,Ltd. |