CN105374480A - High-power chip whole-film fixed resistor and production method thereof - Google Patents
High-power chip whole-film fixed resistor and production method thereof Download PDFInfo
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- CN105374480A CN105374480A CN201510982615.3A CN201510982615A CN105374480A CN 105374480 A CN105374480 A CN 105374480A CN 201510982615 A CN201510982615 A CN 201510982615A CN 105374480 A CN105374480 A CN 105374480A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
The invention discloses a high-power chip whole-film fixed resistor and a production method thereof. The high-power chip whole-film fixed resistor comprises a substrate, a film resistive film layer, a front and back electrode film layer, a film end electrode layer, a nickel barrier layer and a tin and lead weldable layer. The high-power chip whole-film fixed resistor takes the aluminum nitride substrate as a carrier, a metal alloy is adopted as the film resistive film layer, metallic copper is adopted as the front and back electrode film layer; the metal alloy and the metallic copper are sputtered with the magnetron sputtering technology; thermal treatment and thermal stability technologies are adopted to improve stability and thermal resistance; the laser resistor trimming technology is adopted for resistance correction. The high-power chip whole-film fixed resistor is high in power, high in accuracy and good in stability. The 2512-size product has the rated power up to 4 W and the resistance ranging from 1 omega to 10 M omega, so that the weight of electronic equipment is obviously decreased, and the size of the electronic equipment is obviously reduced.
Description
Technical field
The present invention relates to chip fixed resistor technical field, refer in particular to a kind of high-power chip film fixed resistor and preparation method thereof.
Background technology
At present, along with the development of electronic technology and military electronic component and device, and modern weapons equipment is miniaturized, the needs of lightness and high performance, the performance index of electronic devices and components, reliability are had higher requirement, chip fixed resistor is as important base electronic element, be widely used in the surface mount of the small-sized complete machine electronic equipments such as mobile communication, notebook computer, palmtop PC, computer, automotive electronics, also widely use in the circuit of the military electronic complete machines such as Aeronautics and Astronautics, satellite, guided missile, communication simultaneously.
Existing chip fixed resistor is divided into two kinds: chip thick film fixed resistor and chip film fixed resistor.Chip thick-film resistor uses the most extensive, that technology is the most ripe, price is the cheapest resistor at present; Chip film fixed resistor has the significant advantages such as precision is high, resistance-temperature characteristic is low, but the current scope of application also smaller, price is also relatively high.
Chip fixed resistor has the plurality of advantages such as volume is little, lightweight, easy to use, makes its use field increasing, in each functional circuit, is replacing traditional column resistor gradually.The thing followed is, designer requires more and more higher for the property indices of chip fixed resistor, and the kind demand for chip fixed resistor also gets more and more, especially in high-power chip fixed resistor.Much designer wishes that the power of chip fixed resistor can be the bigger the better, to replace the power resistor of more large-sized column resistor and other kinds, so just can make that the weight of electronic equipment obviously declines, volume obviously reduces.
The chip thick film fixed resistor of current routine, the rated power of 2512 sized products only has 1W, power-type 2512 sized products, rated power is maximum can accomplish 2W, wide electrode power type 2512 sized products also can only accomplish 2 ~ 4W, but this series products uses inconvenient, Standard resistance range too narrow (being generally 1 Ω ~ 10k Ω), and Product Precision generally can only reach ± 5%, resistance-temperature characteristic generally can only reach ± 100ppm/ DEG C.The power limited reason of chip thick film fixed resistor, mainly because the heat dispersion of aluminum oxide substrate generally can only meet the limit power of 2W, simultaneously due to the restriction of thick film manufacture craft, make the product of 2 ~ 4W can not provide the wide Standard resistance range product of 1 Ω to 10M Ω.The chip film fixed resistor of current routine, the rated power of 2512 sized products also only has 1W, and the rated power of power-type 2512 sized products also can only accomplish 2W., mainly due to magnetron sputtering technique, heat treatment technics etc. that film manufacturing method is not also for special material in very ripe, technology, still there is more difficult point in the power limited reason of chip film fixed resistor.
In prior art, application number be 200910102542.9 Chinese invention disclose a kind of manufacture method of plate type thin film resistor, belong to plate resistor manufacture method; Comprise the making of table, back electrode and resistive element, encapsulating, resistance trimming, sliver, burn till, hold painting, plating; Its method is: substrate is polished, and substrate cleans, printing table electrode; printing back electrode, electrode sinters, printing barrier layer; vacuum sputtering, removes barrier layer, heat treatment; laser resistor trimming; printing protective layer, protective layer solidifies, and one time sliver, end are coated with electrode; termination electrode sinters, secondary splitting, nickel plating, tin-lead plating.Above prior art, is further improved overcoming in the problems such as relatively high power chip fixed resistor power is little, precision is low, poor stability.
Summary of the invention
The object of the invention is to: in order to problems such as the chip fixed resistor power overcoming existing relatively high power is little, precision is low, poor stabilities, the invention provides full film fixed resistor of a kind of high-power chip and preparation method thereof, 2512 sized products rated power in the present invention can reach 4W, Standard resistance range can from 1 Ω to 10M Ω, these two indexs can make chip fixed resistor replace more much power, large-sized traditional column resistor, and the weight and volume of electronic equipment is obviously declined.
Technical scheme of the present invention is: the full film fixed resistor of a kind of high-power chip, comprises substrate, the film resistor rete be formed on substrate, the positive back electrode film be formed on substrate, the film termination electrode layer being sputtered in base ends, the nickel barrier layer being positioned at positive back electrode film and film termination electrode layer surface, the tin lead be positioned at above nickel barrier layer can layer.
The full film fixed resistor of described high-power chip also comprises the second protection layer be positioned at above film resistor rete.
Described substrate is aluminium nitride substrate; The full film fixed resistor of described high-power chip take aluminium nitride substrate as carrier, and film resistor rete adopts metal alloy, and the positive dorsum electrode layer of film adopts metallic copper, adopts magnetron sputtering technique, splash-proofing sputtering metal alloy and metallic copper.
Described positive back electrode film comprises the positive electrode rete and back electrode film that lay respectively at aluminium nitride substrate front and back.
A manufacture method for the full film fixed resistor of high-power chip take aluminium nitride substrate as carrier, adopts metal alloy to be film resistor rete, adopts metallic copper to be the positive dorsum electrode layer of film; Adopt magnetron sputtering technique, splash-proofing sputtering metal alloy and metallic copper; Adopt heat treatment and thermally-stabilised technology, to increase stability and thermal endurance; Adopt laser resistor trimming technology, carry out resistance correction.
The manufacture craft of the full film fixed resistor of described high-power chip is:
A. sputtered film resistive layer: after blank nitriding aluminium base is printed mask, adopts magnetron sputtering technique, at aluminium nitride substrate surface sputtering last layer metal alloy, forms film resistor rete;
B. heat treatment: heat-treated by the aluminium nitride substrate having sputtered film resistor rete, makes the resistance-temperature characteristic of film resistor rete reach predetermined value;
C. the positive dorsum electrode layer of sputtered film: after the aluminium nitride substrate after heat treatment is printed mask, adopts magnetron sputtering technique, at aluminium nitride substrate front and back sputtering last layer metallic copper, forms the positive dorsum electrode layer of film;
D. laser resistor trimming: will sputter the aluminium nitride substrate of the positive dorsum electrode layer of film, adopts laser resistor trimming technology, carries out resistance correction, form the target resistance of the full film fixed resistor of high-power chip according to resistance trimming figure to film resistor rete;
E. thermally-stabilised: aluminium nitride substrate laser resistor trimming completed carries out thermally-stabilised, the stability that the film resistor rete that laser resistor trimming is completed has and thermal endurance;
F. after, operation makes: the aluminium nitride substrate after thermally-stabilised is carried out successively second protection layer and label print, once segmentation, end-blocking, secondary splitting, plating, screening process making.
The present invention adopts magnetron sputtering technique to form film resistor rete and the positive dorsum electrode layer of film, makes product have the technical indicators such as excellent resistance-temperature characteristic, long-time stability, thermal endurance by heat treatment and thermally-stabilised technology.High-power chip full film fixed resistor power in the present invention is large, precision is high, good stability.2512 sized products rated power in the present invention can reach 4W, Standard resistance range can from 1 Ω to 10M Ω, these two indexs can make chip fixed resistor replace more much power, large-sized traditional column resistor, make that the weight of electronic equipment obviously declines, volume obviously reduces.
Accompanying drawing explanation
Fig. 1 is high-power chip of the present invention full film fixed resistor vertical section organigram.
In figure: 1, aluminium nitride substrate, 2, film resistor rete, 3, the positive dorsum electrode layer of film, 4, second protection layer,
5, film termination electrode layer, 6, nickel barrier layer, 7, tin lead can layer.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 gives the basic structure schematic diagram of the full film fixed resistor of a kind of high-power chip; can be found out by accompanying drawing; the full film fixed resistor of high-power chip in the present invention, comprise aluminium nitride substrate 1, the film resistor rete 2 be formed on substrate, the positive back electrode film 3 be formed on substrate, be positioned at the second protection layer 4 above film resistor rete, the film termination electrode layer 5 being sputtered in base ends, the nickel barrier layer 6 being positioned at positive back electrode film and film termination electrode layer surface, the tin lead be positioned at above nickel barrier layer can layer 7.The full film fixed resistor of the high-power chip of one of the present invention, structurally, is on substrate, form resistive layer, positive back electrode film, then sputters termination electrode, finally can layer on electrode surface plated with nickel barrier layer and tin lead.
The full film fixed resistor of high-power chip of the present invention is with aluminium nitride substrate 1 for carrier, is film resistor rete 2 with metal alloy, take metallic copper as the positive dorsum electrode layer 3 of film.Adopt magnetron sputtering technique, splash-proofing sputtering metal alloy and metallic copper; Adopt heat treatment and thermally-stabilised technology, increase stability and thermal endurance; Adopt laser resistor trimming technology, carry out resistance correction.The full film fixed resistor of high-power chip of the present invention, achieves the rated power of 2512 sized products, can reach 4W in the wide Standard resistance range of 1 Ω to 10M Ω.
The present invention is directed to the problem that the heat dispersion of aluminum oxide substrate is not high enough, employ the aluminium nitride substrate that thermal diffusivity is better, during room temperature, the thermal conductivity of aluminum oxide substrate is about 17W/(mK), and the thermal conductivity of aluminium nitride substrate is about 190W/(mK), its thermal diffusivity is about about 10 times of aluminum oxide substrate, so use the rated power of the obvious improving product of aluminium nitride substrate energy; For the problem that precision is low, resistance-temperature characteristic is poor of chip thick film fixed resistor, adopt the target of different metal proportioning, in conjunction with magnetron sputtering technique, form the film resistor rete of metal alloy and the positive dorsum electrode layer of film of metallic copper, make product Standard resistance range can reach 1 Ω to 10M Ω, precision can reach ± 0.1% within, adopt the heat treatment technics improved, enable resistance-temperature characteristic reach ± 25ppm/ DEG C; For the problem of high-power product long-time stability and poor heat resistance, add thermally-stabilised technology, thus the long-time stability of product and thermal endurance when ensure that high-power use; Heat dispersion simultaneously for making aluminium nitride substrate reach best, adopts the laser resistor trimming technology optimized, enables product Homogeneouslly-radiating when high-power state, thus improve the power of product further.
Because product of the present invention does not use resistance slurry and the electrode slurry of thick film character, so product belongs to full film type.Simultaneously in conjunction with excellent baseplate material and advanced technology, the high-power performance of Realization of Product.Below the manufacture method of the full film fixed resistor of high-power chip is introduced in detail.Because the present invention is high-power full film product, therefore take new manufacture method, specific as follows:
A. sputtered film resistive layer
Blank nitriding aluminium base is printed the effigurate mask of one deck tool.The shape of mask will cover the marking groove of aluminium nitride substrate completely and have certain width.Then adopt magnetron sputtering technique, at aluminium nitride substrate surface sputtering last layer, there is certain thickness metal alloy, form the film resistor rete of resistor.When sputtering different resistance, use the target of different metal proportioning.
B. heat treatment
The aluminium nitride substrate having sputtered film resistor rete is first washed out mask, then carries out high-temperature heat treatment, make the resistance-temperature characteristic of film resistor rete reach desired value.Heat treated time and temperature suitably should adjust according to print situation, until reach desired value.
C. the positive dorsum electrode layer of sputtered film
Aluminium nitride substrate after heat treatment is printed the effigurate mask of tool.The shape of mask will ensure only to reserve left and right positive electrode part and left and right back electrode part.Adopt magnetron sputtering technique, at aluminium nitride substrate positive back surface sputtering last layer, there is certain thickness metallic copper, form the positive dorsum electrode layer of film of resistor.
D. laser resistor trimming
The aluminium nitride substrate having sputtered the positive dorsum electrode layer of film is first washed out mask, then adopts laser resistor trimming technology, according to the certain resistance trimming figure designed in advance, resistance correction is carried out to film resistor rete, form the target resistance of resistor.Resistance trimming figure answers tool setting to cut, and ensures that each several part even film layer distributes.
E. thermally-stabilised
Aluminium nitride substrate laser resistor trimming completed carries out long-time high-temperature thermal stability, and heat-staple time and thermal creep stress can determine the degree of stability of resistor each several part, and the film resistor rete finally making laser resistor trimming complete has long-term stability and thermal endurance.
F. after, operation makes
Aluminium nitride substrate after thermally-stabilised is carried out successively the making of second protection layer and label print, once segmentation, end-blocking, secondary splitting, plating, screening process by common chip film fixed resistor processing technology.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., be all included within protection scope of the present invention.
Claims (6)
1. the full film fixed resistor of high-power chip, it is characterized in that, comprise substrate, the film resistor rete be formed on substrate, the positive back electrode film be formed on substrate, the film termination electrode layer being sputtered in base ends, the nickel barrier layer being positioned at positive back electrode film and film termination electrode layer surface, the tin lead be positioned at above nickel barrier layer can layer.
2. the full film fixed resistor of high-power chip according to claim 1, is characterized in that, also comprises the second protection layer be positioned at above film resistor rete.
3. the full film fixed resistor of high-power chip according to claim 1, is characterized in that, described substrate is aluminium nitride substrate; The full film fixed resistor of described high-power chip take aluminium nitride substrate as carrier, and film resistor rete adopts metal alloy, and the positive dorsum electrode layer of film adopts metallic copper, adopts magnetron sputtering technique, splash-proofing sputtering metal alloy and metallic copper.
4. the full film fixed resistor of high-power chip according to claim 1, is characterized in that, described positive back electrode film comprises the positive electrode rete and back electrode film that lay respectively at aluminium nitride substrate front and back.
5. a manufacture method for the full film fixed resistor of high-power chip, is characterized in that: take aluminium nitride substrate as carrier, adopts metal alloy to be film resistor rete, adopts metallic copper to be the positive dorsum electrode layer of film; Adopt magnetron sputtering technique, splash-proofing sputtering metal alloy and metallic copper; Adopt heat treatment and thermally-stabilised technology, to increase stability and thermal endurance; Adopt laser resistor trimming technology, carry out resistance correction.
6. the manufacture method of the full film fixed resistor of high-power chip according to claim 5, is characterized in that: the manufacture craft of the full film fixed resistor of described high-power chip is:
A. sputtered film resistive layer: after blank nitriding aluminium base is printed mask, adopts magnetron sputtering technique, at aluminium nitride substrate surface sputtering last layer metal alloy, forms film resistor rete;
B. heat treatment: heat-treated by the aluminium nitride substrate having sputtered film resistor rete, makes the resistance-temperature characteristic of film resistor rete reach predetermined value;
C. the positive dorsum electrode layer of sputtered film: after the aluminium nitride substrate after heat treatment is printed mask, adopts magnetron sputtering technique, at aluminium nitride substrate front and back sputtering last layer metallic copper, forms the positive dorsum electrode layer of film;
D. laser resistor trimming: will sputter the aluminium nitride substrate of the positive dorsum electrode layer of film, adopts laser resistor trimming technology, carries out resistance correction, form the target resistance of the full film fixed resistor of high-power chip according to resistance trimming figure to film resistor rete;
E. thermally-stabilised: aluminium nitride substrate laser resistor trimming completed carries out thermally-stabilised, the stability that the film resistor rete that laser resistor trimming is completed has and thermal endurance;
F. after, operation makes: the aluminium nitride substrate after thermally-stabilised is carried out successively second protection layer and label print, once segmentation, end-blocking, secondary splitting, plating, screening process making.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510982615.3A CN105374480A (en) | 2015-12-24 | 2015-12-24 | High-power chip whole-film fixed resistor and production method thereof |
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| CN201510982615.3A CN105374480A (en) | 2015-12-24 | 2015-12-24 | High-power chip whole-film fixed resistor and production method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086103A (en) * | 2017-05-03 | 2017-08-22 | 中国振华集团云科电子有限公司 | The resistance trimming process of film resistor and film resistor method of manufacturing technology |
| CN107093507A (en) * | 2017-05-03 | 2017-08-25 | 中国振华集团云科电子有限公司 | Film resistor heat-treatment technology method and method of manufacturing technology |
| CN107359035A (en) * | 2017-07-13 | 2017-11-17 | 中国振华集团云科电子有限公司 | The manufacture method of chip fixed resister and chip fixed resister |
| CN107910149A (en) * | 2017-11-16 | 2018-04-13 | 贝迪斯电子有限公司 | A kind of plate resistor sputters lateral electrode device |
| CN109192412A (en) * | 2018-08-02 | 2019-01-11 | 南京萨特科技发展有限公司 | A kind of resistor and its manufacturing method with radiator |
| CN110993228A (en) * | 2019-12-25 | 2020-04-10 | 株洲宏达电通科技有限公司 | Preparation method of high-power chip type full-thin-film fixed resistor |
| CN111128499A (en) * | 2019-12-25 | 2020-05-08 | 株洲宏达电通科技有限公司 | Method for manufacturing anti-vulcanization sheet type thick film fixed resistor |
| CN111223620A (en) * | 2020-01-10 | 2020-06-02 | 广东风华高新科技股份有限公司 | Sheet type precision film exclusion and manufacturing method thereof |
| CN111540555A (en) * | 2019-12-16 | 2020-08-14 | 南京先正电子股份有限公司 | Method for improving resistance stability of precision metal film |
| EP4060688A1 (en) * | 2021-03-19 | 2022-09-21 | Holy Stone Enterprise Co., Ltd. | High-power resistor and manufacturing method thereof |
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| CN102820111A (en) * | 2012-08-23 | 2012-12-12 | 中国振华集团云科电子有限公司 | Chip film fixed resistor and production method thereof |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093507B (en) * | 2017-05-03 | 2019-03-15 | 中国振华集团云科电子有限公司 | Film resistor heat-treatment technology method and method of manufacturing technology |
| CN107093507A (en) * | 2017-05-03 | 2017-08-25 | 中国振华集团云科电子有限公司 | Film resistor heat-treatment technology method and method of manufacturing technology |
| CN107086103A (en) * | 2017-05-03 | 2017-08-22 | 中国振华集团云科电子有限公司 | The resistance trimming process of film resistor and film resistor method of manufacturing technology |
| CN107086103B (en) * | 2017-05-03 | 2018-08-14 | 中国振华集团云科电子有限公司 | The resistance trimming process of film resistor and film resistor method of manufacturing technology |
| CN107359035A (en) * | 2017-07-13 | 2017-11-17 | 中国振华集团云科电子有限公司 | The manufacture method of chip fixed resister and chip fixed resister |
| CN107910149A (en) * | 2017-11-16 | 2018-04-13 | 贝迪斯电子有限公司 | A kind of plate resistor sputters lateral electrode device |
| CN107910149B (en) * | 2017-11-16 | 2024-05-07 | 贝迪斯电子有限公司 | Sheet resistor sputtering side electrode device |
| CN109192412A (en) * | 2018-08-02 | 2019-01-11 | 南京萨特科技发展有限公司 | A kind of resistor and its manufacturing method with radiator |
| CN111540555A (en) * | 2019-12-16 | 2020-08-14 | 南京先正电子股份有限公司 | Method for improving resistance stability of precision metal film |
| CN110993228A (en) * | 2019-12-25 | 2020-04-10 | 株洲宏达电通科技有限公司 | Preparation method of high-power chip type full-thin-film fixed resistor |
| CN111128499A (en) * | 2019-12-25 | 2020-05-08 | 株洲宏达电通科技有限公司 | Method for manufacturing anti-vulcanization sheet type thick film fixed resistor |
| CN111223620A (en) * | 2020-01-10 | 2020-06-02 | 广东风华高新科技股份有限公司 | Sheet type precision film exclusion and manufacturing method thereof |
| CN111223620B (en) * | 2020-01-10 | 2022-04-22 | 广东风华高新科技股份有限公司 | Sheet type precision film exclusion and manufacturing method thereof |
| EP4060688A1 (en) * | 2021-03-19 | 2022-09-21 | Holy Stone Enterprise Co., Ltd. | High-power resistor and manufacturing method thereof |
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