CN111540555A - Method for improving resistance stability of precision metal film - Google Patents
Method for improving resistance stability of precision metal film Download PDFInfo
- Publication number
- CN111540555A CN111540555A CN201911300336.9A CN201911300336A CN111540555A CN 111540555 A CN111540555 A CN 111540555A CN 201911300336 A CN201911300336 A CN 201911300336A CN 111540555 A CN111540555 A CN 111540555A
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- Prior art keywords
- resistance
- metal film
- sand blasting
- temperature
- film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/245—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by mechanical means, e.g. sand blasting, cutting, ultrasonic treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention belongs to the technical field of electronic element manufacturing processes. The technical scheme of the invention is as follows: a method for improving the resistance stability of a precision metal film comprises the following steps: providing a substrate with an insulating layer covered on the surface; step two, adopting a direct current sputtering technology to enable the alloy to be attached to the other surface of the substrate in the step one to form a layer of conductive metal film; step three, grooving, spot welding and welding, sand blasting and resistance adjustment, and controlling the resistance value of the high-precision metal film resistor; fourthly, high-temperature treatment is carried out, so that a thin and compact metal oxide protective layer is formed on the surface of the precise metal film resistance film layer in time due to damage caused by corundum collision during sandblasting resistance adjustment; and step five, packaging for later use. The invention has the beneficial effects that after the resistance after sand blasting resistance adjustment is increased and treated at high temperature for a short time, the stability level of the produced precise metal film resistance including room temperature storage is obviously improved.
Description
Technical Field
The invention belongs to the technical field of electronic element manufacturing processes, and particularly relates to a method for improving the resistance stability of a precise metal film.
Background
Precision metal film resistors are widely used in industrial automation, instruments and meters. It requires higher stability and reliability than general resistors. In the actual production, people usually pay more attention to high-temperature aging after grooving in the precision resistor machining process and electric aging after spot welding, but baking treatment of the resistor after sand blasting and resistance trimming is not fully known and is mostly considered to be unnecessary, so that the produced precision resistor has an unsatisfactory level of storage performance including room temperature. In order to improve the level of the related performance of the precision resistor including the storage at room temperature, in addition to paying attention to the high-temperature aging of a grooved product and the electric aging after spot welding, the conditions of environmental temperature, humidity and the like of sandblasting resistance trimming are strictly controlled, meanwhile, the high-temperature treatment step of short time is added to the resistor after sandblasting, and tests prove that the resistor after sandblasting resistance trimming is improved in the related indexes including the storage performance at room temperature through timely high-temperature treatment compared with the resistor without treatment.
Disclosure of Invention
The invention aims to provide a method for improving the stability of a precision metal film resistor, which is characterized in that a product subjected to sand blasting and resistance adjustment is subjected to short-time high-temperature treatment in time, so that a thin and compact metal oxide protective layer is formed on the surface of a resistance film layer in time due to damage caused by corundum collision during sand blasting and resistance adjustment, the formation of loose and unstable oxide hydrate at the damage part of the surface of the resistance film layer due to exposure in an uncontrolled environment and contact with water vapor is avoided, and the oxide hydrate is an unstable factor for the film resistor. Because a compact metal oxide thin layer is formed on the damaged surface, the influence of external water vapor on the resistance thin film is isolated, and the improvement of the precision resistance including the room temperature storage performance level after fine adjustment is realized. Thereby solving the technical problems presented in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a method for improving the resistance stability of a precision metal film comprises the following steps:
providing a substrate with an insulating layer covered on the surface;
step two, adopting a direct current sputtering technology to enable the alloy to be attached to the other surface of the substrate in the step one to form a layer of conductive metal film; during film forming, the loading of a sputtering film-forming matrix is controlled, so that the sputtering initial resistance with smaller dispersion is obtained, and the consistency level of the thickness of a sputtering film is improved;
step three, grooving, spot welding and welding, sand blasting and resistance adjustment, and controlling the resistance value of the high-precision metal film resistor;
fourthly, high-temperature treatment is carried out, so that a thin and compact metal oxide protective layer is formed on the surface of the precise metal film resistance film layer in time due to damage caused by corundum collision during sandblasting resistance adjustment;
and step five, packaging for later use.
Further, the environmental temperature and humidity control of sandblasting resistance adjustment is as follows: the temperature range is 22-25 ℃, and the humidity is not more than 60% RH.
Further, small samples are firstly sprayed and baked before batch sand blasting and resistance adjustment, the precision change of the sand blasting and resistance adjustment resistance is mastered, and the sand blasting and resistance adjustment resistance is placed into an oven for heat preservation and baking in the shortest time after the sand blasting and resistance adjustment is finished.
Further, the temperature and time of the heat preservation baking are as follows: the temperature is 165 +/-2 ℃, and the time is 30-45 min.
Further, the high-temperature treatment time in the fourth step is 1-5 min.
The invention has the technical effects and advantages that:
the surface of the resistance film after sandblasting and resistance adjustment is damaged to a certain degree, an oxide protective film thin layer formed in the thermal aging process after thermal treatment and grooving is damaged, a new oxide protective film thin layer needs to be formed under the high-temperature condition to protect the resistance film, and the improvement of the precision metal film resistance in the level including room-temperature storage is realized.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Embodiment 1, a method for improving the resistance stability of a precision metal film, comprising the steps of:
providing a substrate with an insulating layer covered on the surface;
step two, adopting a direct current sputtering technology to enable the alloy to be attached to the other surface of the substrate in the step one to form a layer of conductive metal film; during film forming, the loading of a sputtering film-forming matrix is controlled, so that the sputtering initial resistance with smaller dispersion is obtained, and the consistency level of the thickness of a sputtering film is improved;
step three, grooving, spot welding and welding, sand blasting and resistance adjustment, and controlling the resistance value of the high-precision metal film resistor;
fourthly, high-temperature treatment is carried out, so that a thin and compact metal oxide protective layer is formed on the surface of the precise metal film resistance film layer in time due to damage caused by corundum collision during sandblasting resistance adjustment;
and step five, packaging for later use.
Further, the environmental temperature and humidity control of sandblasting resistance adjustment is as follows: the temperature range is 22-25 ℃, and the humidity is not more than 60% RH.
Further, small samples are firstly sprayed and baked before batch sand blasting and resistance adjustment, the precision change of the sand blasting and resistance adjustment resistance is mastered, and the sand blasting and resistance adjustment resistance is placed into an oven for heat preservation and baking in the shortest time after the sand blasting and resistance adjustment is finished.
Further, the temperature and time of the heat preservation baking are as follows: the temperature is 165 +/-2 ℃, and the time is 30-45 min.
Further, the high-temperature treatment time in the fourth step is 1-5 min.
The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be directly connected, and "upper," "lower," "left," and "right" are only used to indicate relative positional relationships, and when the absolute position of the object to be described is changed, the relative positional relationships may be changed;
second, the above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A method for improving the resistance stability of a precision metal film is characterized in that: the method comprises the following steps:
providing a substrate with an insulating layer covered on the surface;
step two, adopting a direct current sputtering technology to enable the alloy to be attached to the other surface of the substrate in the step one to form a layer of conductive metal film; during film forming, the loading of a sputtering film-forming matrix is controlled, so that the sputtering initial resistance with smaller dispersion is obtained, and the consistency level of the thickness of a sputtering film is improved;
step three, grooving, spot welding and welding, sand blasting and resistance adjustment, and controlling the resistance value of the high-precision metal film resistor;
fourthly, high-temperature treatment is carried out, so that a thin and compact metal oxide protective layer is formed on the surface of the precise metal film resistance film layer in time due to damage caused by corundum collision during sandblasting resistance adjustment;
and step five, packaging for later use.
2. The method of claim 1, wherein the method comprises: and (3) controlling the temperature and the humidity of the environment with sand blasting and resistance adjustment: the temperature range is 22-25 ℃, and the humidity is not more than 60% RH.
3. The method of claim 1, wherein the method comprises: and (3) spraying small samples and baking before batch sand blasting and resistance trimming, mastering the precision change of the sand blasting and resistance trimming resistor, and putting the sand blasting and resistance trimming resistor into an oven for heat preservation and baking in the shortest time after the sand blasting and resistance trimming are finished.
4. The method of claim 3, wherein the method comprises: the temperature and time of the heat preservation baking are as follows: the temperature is 165 +/-2 ℃, and the time is 30-45 min.
5. The method of claim 1, wherein the method comprises: the high-temperature treatment time in the fourth step is 1-5 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911300336.9A CN111540555B (en) | 2019-12-16 | 2019-12-16 | Method for improving resistance stability of precision metal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911300336.9A CN111540555B (en) | 2019-12-16 | 2019-12-16 | Method for improving resistance stability of precision metal film |
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| Publication Number | Publication Date |
|---|---|
| CN111540555A true CN111540555A (en) | 2020-08-14 |
| CN111540555B CN111540555B (en) | 2021-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911300336.9A Active CN111540555B (en) | 2019-12-16 | 2019-12-16 | Method for improving resistance stability of precision metal film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115618287A (en) * | 2022-10-14 | 2023-01-17 | 中国科学院沈阳自动化研究所 | Method for constructing resistance spot welding quality evaluation model based on small sample data |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106102A (en) * | 1993-09-30 | 1995-04-21 | Koa Corp | Electronic part and its manufacture |
| CN103050204A (en) * | 2012-12-19 | 2013-04-17 | 中国振华集团云科电子有限公司 | Method for manufacturing chip-type linear positive temperature coefficient thermistor |
| CN103430245A (en) * | 2011-02-18 | 2013-12-04 | 釜屋电机株式会社 | Metal plate low-resistance chip resistor and method for manufacturing same |
| CN105374480A (en) * | 2015-12-24 | 2016-03-02 | 株洲宏达电通科技有限公司 | High-power chip whole-film fixed resistor and production method thereof |
-
2019
- 2019-12-16 CN CN201911300336.9A patent/CN111540555B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106102A (en) * | 1993-09-30 | 1995-04-21 | Koa Corp | Electronic part and its manufacture |
| CN103430245A (en) * | 2011-02-18 | 2013-12-04 | 釜屋电机株式会社 | Metal plate low-resistance chip resistor and method for manufacturing same |
| CN103050204A (en) * | 2012-12-19 | 2013-04-17 | 中国振华集团云科电子有限公司 | Method for manufacturing chip-type linear positive temperature coefficient thermistor |
| CN105374480A (en) * | 2015-12-24 | 2016-03-02 | 株洲宏达电通科技有限公司 | High-power chip whole-film fixed resistor and production method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115618287A (en) * | 2022-10-14 | 2023-01-17 | 中国科学院沈阳自动化研究所 | Method for constructing resistance spot welding quality evaluation model based on small sample data |
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| CN111540555B (en) | 2021-12-21 |
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