CN1311481C - Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor - Google Patents
Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor Download PDFInfo
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- CN1311481C CN1311481C CNB021601984A CN02160198A CN1311481C CN 1311481 C CN1311481 C CN 1311481C CN B021601984 A CNB021601984 A CN B021601984A CN 02160198 A CN02160198 A CN 02160198A CN 1311481 C CN1311481 C CN 1311481C
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Abstract
The present invention relates to a manufacturing process for an environmental protection type ceramic positive temperature coefficient resistor, and particularly relates to a manufacturing process for an unleaded ceramic positive temperature coefficient resistor. The present invention does not use lead or leady oxides in the process of manufacturing the unleaded ceramic positive temperature coefficient resistor. The present invention has a formula expression: (BaxSryCaz) Tiu, wherein X: 0.6 to 0.9, Y: 0 to 0.3, Z: 0.02 to 0.2, U: 0.98 to 1.02; manganese content is between 0.01% to 0.1% in the formula, the adding quantity of SiO<2> is 0.5% to 3.5%, semiconductor agent can be one or a plurality of kinds of niobium, dysprosium, yttrium, neodymium, samarium and stibium, and the use level of the semiconductor agent is 0.2% to 0.5%. Compared with a traditional manufacturing method, the present invention does not use the lead or the leady oxides in the process of manufacturing the whole ceramic PTCR, and simultaneously does not influence the performance of the ceramic PTCR.
Description
Technical field
The manufacture method of a kind of environment-friendly ceramic semistor of the present invention relates to the manufacture method of a kind of lead-free ceramics semistor (hereinafter to be referred as " ceramic PTCR ").
Background technology
Pottery PTCR is applied to the fields such as overcurrent, overvoltage, overheat protector, thermostatical heating element of electronic circuit owing to its good stable.But all contain a spot of lead in the conventional ceramic PTCR material, adding plumbous purpose is in order to adjust the Curie point of PTCR, to add the crystal grain distribution that a small amount of lead can effectively improve ceramic PTCR simultaneously.The fusing point that uses in welding process simultaneously is that the standard scolding tin of 183 degree contains 37% lead, and contains 5% lead in the overlay coating of lead-in wire.Plumbous harmful, so advanced country such as America and Europe has proposed restriction to the use of plumbous and plumbous oxide.
Summary of the invention
The objective of the invention is to propose a kind of plumbous manufacture method of in the ceramic PTCR course of processing, not introducing.
Purpose of the present invention can realize in the following manner: the manufacture method of environment-friendly ceramic semistor is not use leaded or leaded oxide in preparation process.
On the technique scheme basis, the manufacture method of environment-friendly ceramic semistor, its recipe formulation is: (Ba
XSr
YCa
Z) Ti
U, wherein,
X：0.6～0.9，Y：0～0.3，Z：0.02～0.2，U：0.98～1.02
For raising PTCR effect adds manganese content by weight percentage in prescription is between 0.01%～0.1%, the SiO2 addition is 0.5%～3.5%, the semiconducting agent can be one or more of niobium, dysprosium, yttrium, neodymium, samarium, antimony, and consumption is 0.2%～0.5%.
On the technique scheme basis, the scolding tin of employed welding material stanniferous 94～98% argentiferous 6～2%.
On the technique scheme basis, use copper cash as the surface plating pure tin of lead-in wire.
The PTCR that use the present invention makes does not have a significant effect to the qualification rate of product.
But it still has ask for something to the manufacture process of ceramic PTCR, specifically describes as follows:
1: because product is unleaded thereby Curie point adjustable extent PTCR is 50～120 degrees centigrade.
2: owing to used the scolding tin welding temperature of silver-colored ashbury metal must be increased to 240～270 degree.
3: because the necessary preheating of the raising of welding temperature ceramics before welding, preheat temperature should not be lower than 60 degree, and its upper limit depends on the scaling powder of use.
4: because the welding material that uses increases to some extent with lead-in wire product thereby every cost as specific (special) requirements.
Superiority of the present invention is: compare with traditional manufacture method, the present invention does not use leaded or leaded oxide in the preparation process of whole ceramic PTCR, does not influence the performance of ceramic PTCR simultaneously.
Embodiment
Embodiment 1:
Recipe formulation is:
(Ba
0.90Sr
0.08Ca
0.02)Ti
1.01+0.35％Nb
2O
5
Powder in the above-mentioned recipe formulation is mixed 20～48h with ball mill, oven dry then, at 1050～1200 ℃ of following pre-burning 0.5～5h, again with its second batch, the manganese content that adds for raising PTCR effect is 0.1%, SiO
2Addition is 2.5%, ball milling.With granulation for powders, moulding sinters porcelain into, then by electrode then.The temperature of sintering is 1350 ℃, temperature retention time 40 minutes.The copper cash of plating pure tin is made the shape that becomes to need, ceramics is inserted in the lead-in wire immersed solder in silver-colored ashbury metal, thereby the welding process of finishing.
Table (1):
| Properties of product | Method of testing | Testing equipment |
| Zero power resistance | To in 25 ± 2 ℃ environment, be placed one by the later ceramics of good electrode and as a child measure its resistance.Measure 50 altogether, calculate its average electrical resistance. | The zero power resistance table |
| Lift-drag ratio | Measure the R-T curve of 10 ceramics, get the resistance calculations lift-drag ratio of its highest electricity and minimum point, calculate its mean value. | Resistance temperature (R-T) curve tester |
| Maximum proof voltage | Initial voltage 500V, initial current 0.5A, every 5 minutes, making alive 25V was till ceramics lost efficacy.Test 10 altogether, get its mean value. | PTCR thermistor Hi-pot Tester |
| Solderability | The test of solderability should be tested Ta according to GB2423.28 and test, and weld groove method 1A is adopted in test | Weld groove |
Table (2)
| Properties of product | Test result | |
| The ceramics that tradition is leaded | Ceramics of the present invention | |
| Zero power resistance | 42.55Ω | 43.4Ω |
| Lift-drag ratio | 7.22 | 7.26 |
| Maximum proof voltage | 750Vac | 750Vac |
| Solderability | Well | Well |
As can be seen from the above results, the present invention does not reduce withstand voltage properties and the solderability of PTCR.The resistance value of the ceramic PTCR that makes through the present invention is with identical without the PTCR resistance value of the present invention's making.
Embodiment 2:
Technology is identical with embodiment 1, and its prescription is as follows:
Recipe formulation is (Ba
0.82Sr
0.16Ca
0.02) Ti
1.01+ 0.36%Nb
2O
5
Comparative result is shown in table (3).
Table (3)
| Properties of product | Test result | |
| Without ceramics of the present invention | Ceramics of the present invention | |
| Zero power resistance | 42.55Ω | 44.58Ω |
| Lift-drag ratio | 7.22 | 7.24 |
| Maximum proof voltage | 730Vac | 740Vac |
| Solderability | Well | Well |
As can be seen from the above results, the present invention does not reduce withstand voltage properties and the solderability of PTCR.The leaded PTCR resistance value of the zero power resistance of the ceramic PTCR that makes through the present invention and lift-drag ratio value and tradition is close.
Claims (4)
1, a kind of manufacture method of environment-friendly ceramic semistor is characterized in that: do not use leaded in the preparation process of lead-free ceramics semistor or contain the material of lead oxides, wherein, the lead-free ceramics recipe formulation is: (Ba
XSr
YCa
Z) Ti
U, wherein,
X：0.6～0.9，Y：0～0.3，Z：0.02～0.2，U：0.98～1.02
Adding manganese content in prescription by weight percentage is 0.01%～0.1%, SiO
2Addition is 0.5%～3.5%, and the semiconducting agent is one or more of niobium, dysprosium, yttrium, neodymium, samarium, antimony, and consumption is 0.2%～0.5%.
2, according to the manufacture method of the described a kind of environment-friendly ceramic semistor of claim 1, it is characterized in that: the welding material that the environment-friendly ceramic semistor uses is the scolding tin of stanniferous 94～98%, argentiferous 6～2%.
3, according to the manufacture method of claim 1 or 2 described a kind of environment-friendly ceramic semistors, it is characterized in that: use copper cash as the surface plating pure tin of lead-in wire.
4, according to the manufacture method of the described a kind of environment-friendly ceramic semistor of claim 3, it is characterized in that: the powder by recipe formulation mixes 20～48h with ball mill, oven dry then, at 1050～1200 ℃ of following pre-burning 0.5～5h, again with its second batch, add manganese content and be 0.1%, SiO
2Addition is 2.5%, semiconducting agent 0.2～0.5%, behind the ball milling with granulation for powders, moulding, sintered porcelain under the condition in 40 minutes in 1350 ℃ of sintering temperatures, temperature retention time then, by electrode, the copper cash of plating pure tin is made the shape that becomes to need, ceramics is inserted in the lead-in wire, welding is finished in immersed solder in silver-colored ashbury metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021601984A CN1311481C (en) | 2002-12-27 | 2002-12-27 | Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021601984A CN1311481C (en) | 2002-12-27 | 2002-12-27 | Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1426072A CN1426072A (en) | 2003-06-25 |
| CN1311481C true CN1311481C (en) | 2007-04-18 |
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ID=4753417
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021601984A Expired - Fee Related CN1311481C (en) | 2002-12-27 | 2002-12-27 | Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101429020B (en) * | 2008-11-26 | 2011-11-23 | 丹东国通电子元件有限公司 | Method for producing positive temperature coefficient thermistor for surge suppressor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409374C (en) * | 2003-12-04 | 2008-08-06 | 上海长园维安电子线路保护股份有限公司 | Method for making porous ceramics positive temperature coefficient thermistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1143255A (en) * | 1995-02-14 | 1997-02-19 | Tdk株式会社 | Semiconductor ceramic synthetic article with positive resistance temperature coefficient and its producing method |
| JP2001118427A (en) * | 1999-10-21 | 2001-04-27 | Murata Mfg Co Ltd | Thick film electrode paste |
-
2002
- 2002-12-27 CN CNB021601984A patent/CN1311481C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1143255A (en) * | 1995-02-14 | 1997-02-19 | Tdk株式会社 | Semiconductor ceramic synthetic article with positive resistance temperature coefficient and its producing method |
| JP2001118427A (en) * | 1999-10-21 | 2001-04-27 | Murata Mfg Co Ltd | Thick film electrode paste |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101429020B (en) * | 2008-11-26 | 2011-11-23 | 丹东国通电子元件有限公司 | Method for producing positive temperature coefficient thermistor for surge suppressor |
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| Publication number | Publication date |
|---|---|
| CN1426072A (en) | 2003-06-25 |
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Owner name: SHANGHAI CHANGYUAN WEIAN ELECTRONIC LINE PROTECTIO Free format text: FORMER NAME OR ADDRESS: WEIAN THERMOELECTRIC MATERIAL CO LTD, SHANGHAI |
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Address after: Shanghai City, Siping Road No. 710 715Z Patentee after: Shanghai Changyuan Wayon Circuit Protection Co., Ltd. Address before: Room 201, 401 Jinqiao Road, Shanghai, Pudong Patentee before: Weian Thermoelectrical Materials Co., Ltd., Shanghai |
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