JP2001118427A - Thick film electrode paste - Google Patents
Thick film electrode pasteInfo
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- JP2001118427A JP2001118427A JP29975599A JP29975599A JP2001118427A JP 2001118427 A JP2001118427 A JP 2001118427A JP 29975599 A JP29975599 A JP 29975599A JP 29975599 A JP29975599 A JP 29975599A JP 2001118427 A JP2001118427 A JP 2001118427A
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- mol
- electrode paste
- film electrode
- glass
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミック電子部
品の電極形成に供される厚膜電極ペーストに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick-film electrode paste used for forming electrodes of a ceramic electronic component.
【０００２】[0002]
【従来の技術】従来よりセラミック電子部品は、誘電
体、半導体、圧電体等のセラミックスを用いている。こ
れらのセラミック電子部品に付随する電極や配線を構成
する材料として厚膜電極ペーストが多く用いられ、この
ような用途の厚膜電極ペーストの場合、ガラス粉末が添
加される場合がある。厚膜電極ペースト中にガラス粉末
を添加する効果としては、電極焼成時に軟化流動して導
電粉末の焼結を促進させること、厚膜電極の密着強度を
向上させること、さらにセラミック電子部品がセラミッ
クコンデンサの場合に、厚膜電極とセラミック素子の界
面部に生成するポアを埋めることにより静電容量の低下
を防ぐこと、等が挙げられる。2. Description of the Related Art Conventionally, ceramic electronic components use ceramics such as dielectrics, semiconductors, and piezoelectrics. Thick film electrode paste is often used as a material for forming electrodes and wirings associated with these ceramic electronic components. In the case of such a thick film electrode paste, glass powder may be added. The effect of adding the glass powder to the thick film electrode paste is to soften and flow the electrode during firing to promote sintering of the conductive powder, to improve the adhesion strength of the thick film electrode, and to make the ceramic electronic component a ceramic capacitor. In such a case, there is a method of preventing a decrease in capacitance by filling a pore generated at an interface between the thick film electrode and the ceramic element.
【０００３】厚膜電極ペースト中に添加するガラス粉末
としては、ガラス軟化点の低い鉛系ガラスが従来より用
いられていたが、近年では非鉛系ガラスへ移行する傾向
にある。As a glass powder to be added to the thick film electrode paste, a lead-based glass having a low glass softening point has been conventionally used, but recently there has been a tendency to shift to a lead-free glass.
【０００４】[0004]
【発明が解決しようとする課題】従来技術によれば、厚
膜電極ペースト中に添加するガラス粉末として、鉛系ガ
ラスが多く使用されているが、環境問題への配慮から非
鉛系ガラスへの置き換えが求められている。しかしなが
ら、従来の非鉛系ガラス、例えば硼酸バリウム亜鉛系、
硼珪酸ビスマス系ガラスを用いると、電気特性や電極密
着強度が劣化するという問題がある。According to the prior art, lead-based glass is often used as a glass powder to be added to a thick film electrode paste. Replacement is required. However, conventional lead-free glasses, such as barium zinc borate,
When bismuth borosilicate glass is used, there is a problem that electrical characteristics and electrode adhesion strength deteriorate.
【０００５】本発明の目的は、上述の問題点を解消すべ
くなされたもので、鉛系ガラスを含有せずに電極密着強
度が高く、電気特性の良い厚膜電極ペーストを提供する
ことにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and to provide a thick-film electrode paste having high electrode adhesion strength and excellent electric characteristics without containing a lead-based glass. .
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明の厚膜電極ペーストは、セラミック電子部品
の電極形成に供される鉛フリー厚膜電極ペーストであっ
て、Ａｇからなる導電粉末と、ガラス粉末と、ビヒクル
とを含有し、前記ガラス粉末は、酸化カルシウム，酸化
ストロンチウム，酸化バリウムから選ばれるアルカリ土
類酸化物を１種以上と、酸化ビスマスと、酸化硼素とを
含有し、それぞれをＭＯ（ＭＯはＣａＯ，ＳｒＯ，Ｂａ
Ｏの合計）、Ｂｉ2Ｏ3，Ｂ2Ｏ3と表したとき、ガラス組
成１００モル％に対して、１０≦ＭＯ≦３０モル％、１
０≦Ｂｉ2Ｏ3≦５０モル％、２０≦Ｂ2Ｏ3≦６０モル％
の範囲にあることを特徴とする。In order to achieve the above-mentioned object, a thick-film electrode paste of the present invention is a lead-free thick-film electrode paste used for forming electrodes of ceramic electronic components, and is made of a conductive material made of Ag. Powder, a glass powder, and a vehicle, and the glass powder contains at least one kind of alkaline earth oxide selected from calcium oxide, strontium oxide, and barium oxide, bismuth oxide, and boron oxide. , Each MO (MO is CaO, SrO, Ba)
O), Bi 2 O 3 , and B 2 O 3 , where 10 ≦ MO ≦ 30 mol%, 1
0 ≦ Bi 2 O 3 ≦ 50 mol%, 20 ≦ B 2 O 3 ≦ 60 mol%
In the range.
【０００７】また、本発明の厚膜電極ペーストは、セラ
ミック電子部品の電極形成に供される鉛フリー厚膜電極
ペーストであって、Ｃｕからなる導電粉末と、ガラス粉
末と、ビヒクルとを含有し、前記ガラス粉末は、酸化カ
ルシウム，酸化ストロンチウム，酸化バリウムから選ば
れるアルカリ土類酸化物を１種以上と、酸化ビスマス
と、酸化硼素とを含有し、それぞれをＭＯ（ＭＯはＣａ
Ｏ，ＳｒＯ，ＢａＯの合計）、Ｂｉ2Ｏ3，Ｂ2Ｏ3と表し
たとき、ガラス組成１００モル％に対して、１０≦ＭＯ
≦３０モル％、１０≦Ｂｉ2Ｏ3≦３０モル％、４０≦Ｂ
2Ｏ3≦８０モル％の範囲にあることを特徴とする。The thick-film electrode paste of the present invention is a lead-free thick-film electrode paste used for forming electrodes of ceramic electronic components, and contains a conductive powder of Cu, a glass powder, and a vehicle. The glass powder contains at least one kind of alkaline earth oxide selected from calcium oxide, strontium oxide, and barium oxide, bismuth oxide, and boron oxide.
O, SrO, and BaO), Bi 2 O 3 , and B 2 O 3.
≦ 30 mol%, 10 ≦ Bi 2 O 3 ≦ 30 mol%, 40 ≦ B
It is characterized in that 2 O 3 ≦ 80 mol%.
【０００８】また、前記ガラス粉末の添加量は、導電粉
末１００体積％に対して１〜１０体積％であることを特
徴とする。The glass powder is added in an amount of 1 to 10% by volume with respect to 100% by volume of the conductive powder.
【０００９】[0009]
【発明の実施の形態】本発明の「アルカリ土類酸化物−
硼酸ビスマス系ガラス」は、非鉛系ガラスの中では比較
的軟化点が低いにもかかわらず、電極焼成時に結晶化が
起こりにくいため、ガラス添加の効果、すなわち、電極
焼成時に軟化流動して導電粉末の焼結を促進させると同
時に電極の密着強度を向上させる効果が安定して発揮さ
れる。本発明は、ガラス粉末に「アルカリ土類酸化物−
硼酸ビスマス系ガラス」を用いることにより、従来の鉛
系ガラスと同等の電極密着強度、電気特性が取得でき
る。DETAILED DESCRIPTION OF THE INVENTION The alkaline earth oxide of the present invention
Although bismuth borate glass has a relatively low softening point among lead-free glasses, crystallization does not easily occur during electrode firing. The effect of promoting the sintering of the powder and at the same time improving the adhesion strength of the electrode is stably exhibited. The present invention relates to a method for preparing an alkaline earth oxide-
By using "bismuth borate-based glass", the same electrode adhesion strength and electric characteristics as those of a conventional lead-based glass can be obtained.
【００１０】上述したアルカリ土類酸化物としては、少
なくとも酸化カルシウム，酸化ストロンチウム，酸化バ
リウムから選ばれる１種を適宜用いることができるが、
ガラス製造上の扱いやすさや環境への負荷を考慮する
と、酸化カルシウムまたは酸化ストロンチウムを用いる
ことがより好ましい。As the above-mentioned alkaline earth oxide, at least one selected from calcium oxide, strontium oxide and barium oxide can be used as appropriate.
Considering the ease of handling in glass production and the burden on the environment, it is more preferable to use calcium oxide or strontium oxide.
【００１１】また、ガラスの組成については、軟化点の
調整や耐めっき性の向上等の目的で、ガラス組成１００
モル％に対して、例えば酸化珪素を１０モル％以内の範
囲で少量加えることができる。The glass composition is adjusted to 100% for the purpose of adjusting the softening point and improving the plating resistance.
For example, silicon oxide can be added in a small amount within the range of 10 mol% with respect to the mol%.
【００１２】また、厚膜電極ペースト中へのガラスの添
加量は、導電粉末１００体積％に対して１〜１０体積％
であることが好ましい。添加量が１体積％未満ではガラ
ス添加効果が小さく、添加量が１０体積％を超えるとガ
ラスが電極表面に偏析して、はんだ濡れ不良やめっき付
き不良を生じることがある。The amount of glass added to the thick film electrode paste is 1 to 10% by volume with respect to 100% by volume of the conductive powder.
It is preferable that If the addition amount is less than 1% by volume, the effect of adding glass is small, and if the addition amount exceeds 10% by volume, the glass may segregate on the electrode surface, resulting in poor solder wetting and poor plating.
【００１３】[0013]
【実施例】まず、表１〜６に示すそれぞれの組成となる
ように、出発原料であるアルカリ土類元素の水酸化物、
Ｂｉ2Ｏ3、Ｈ3ＢＯ3を調合し、アルミナ製のるつぼに入
れて１０００〜１２００℃に１時間保持した。次に、試
料が完全に溶融したことを確認し、炉から取り出して純
水中に投入してガラス化させた。得られたビーズ状のガ
ラスをボールミルで湿式粉砕して、試料１〜４２のガラ
ス粉末を得た。同様に、鉛系、硼酸バリウム亜鉛系、硼
珪酸ビスマス系ガラスとなるように出発原料を調合し、
溶融後にガラス化させて、それぞれ試料４３〜４５のガ
ラス粉末を得た。EXAMPLE First, a hydroxide of an alkaline earth element as a starting material was prepared so as to have the respective compositions shown in Tables 1 to 6,
To prepare a Bi 2 O 3, H 3 BO 3, and held for 1 hour to put 1000 to 1200 ° C. in an alumina crucible. Next, after confirming that the sample was completely melted, the sample was taken out of the furnace and put into pure water to vitrify. The obtained bead-shaped glass was wet-pulverized with a ball mill to obtain glass powders of Samples 1 to 42. Similarly, a starting material is prepared to be a lead-based, barium zinc borate-based, bismuth borosilicate-based glass,
After melting, they were vitrified to obtain glass powders of samples 43 to 45, respectively.
【００１４】次に、導電粉末２５体積％と、試料１〜４
５のガラス粉末５体積％と、ビヒクル７０体積％とを混
合し、３本ロールミルで混練して、試料１〜４５の厚膜
電極ペーストを得た。なお、導電粉末としては、粒径
０．５〜２μｍのＡｇ粉末またはＣｕ粉末を用いた。ま
た、ビヒクルとしては、ターピネオールにエチルセルロ
ースを２０ｗｔ％の割合で溶解させたものを用いた。Next, 25% by volume of the conductive powder and Samples 1 to 4
5 volume% of the glass powder of No. 5 and 70 volume% of the vehicle were mixed and kneaded with a three-roll mill to obtain thick film electrode pastes of samples 1 to 45. In addition, Ag powder or Cu powder having a particle size of 0.5 to 2 μm was used as the conductive powder. Further, as the vehicle, one obtained by dissolving ethyl cellulose in terpineol at a ratio of 20 wt% was used.
【００１５】静電容量、誘電体損失ならびに電極密着強
度の測定には、図１に示すようなセラミックコンデンサ
を試料として用いた。セラミックコンデンサ１は、誘電
体セラミック素子２と、厚膜電極３，３と、リード線
４，４と、はんだ５，５とからなる。A ceramic capacitor as shown in FIG. 1 was used as a sample for measurement of capacitance, dielectric loss and electrode adhesion strength. The ceramic capacitor 1 includes a dielectric ceramic element 2, thick film electrodes 3 and 3, lead wires 4 and 4, and solders 5 and 5.
【００１６】まず、目標とする静電容量が１ｎＦとなる
ような誘電体セラミック素子２の両主面に試料１〜４５
の厚膜電極ペーストを３．５ｍｍφのパターンでスクリ
ーン印刷し、空気中６００℃で３０分間焼成して、試料
１〜４５の厚膜電極３，３を形成した。次に、試料１〜
４５の厚膜電極３，３にリード線４，４をはんだ付けし
て、試料１〜４５のセラミックコンデンサ１を得た。First, samples 1 to 45 were placed on both main surfaces of the dielectric ceramic element 2 so that the target capacitance was 1 nF.
The thick film electrode paste was screen-printed in a 3.5 mmφ pattern and baked in air at 600 ° C. for 30 minutes to form thick film electrodes 3 and 3 of samples 1 to 45. Next, samples 1 to
The lead wires 4 and 4 were soldered to the 45 thick film electrodes 3 and 3 to obtain the ceramic capacitors 1 of samples 1 to 45.
【００１７】そこで、試料１〜４５のセラミックコンデ
ンサ１の静電容量と誘電体損失を測定した。また、リー
ド線４，４の両端をロードセルで引っ張り、厚膜電極
３，３を誘電体セラミック素子２から引き剥がすのに必
要な力（電極密着強度）を測定した。従来比増減につい
ては、試料４３に対する増加率を求め、値が増加してい
るものを＋とし、これらの測定結果を表１〜７にまとめ
た。なお評価は、鉛Ｏ系ガラスを用いた試料４３の測定
結果と比較して劣化の割合が｜３％｜以内のもの、すな
わち誘電体損失については増加率＋３％以内、電極密着
強度については増加率−３％以内のものを合格とし、○
印で表した。本発明の範囲外であった試料については、
評価を不合格とし、×印で表した。Therefore, the capacitance and the dielectric loss of the ceramic capacitors 1 of the samples 1 to 45 were measured. Further, both ends of the lead wires 4 and 4 were pulled by a load cell, and a force (electrode adhesion strength) required to peel the thick film electrodes 3 and 3 from the dielectric ceramic element 2 was measured. With respect to the increase / decrease in the conventional ratio, the rate of increase with respect to the sample 43 was determined, and those having increased values were defined as +, and the measurement results are summarized in Tables 1 to 7. In the evaluation, the deterioration rate was within | 3% | as compared with the measurement result of the sample 43 using lead O-based glass, that is, the increase rate of the dielectric loss was within + 3%, and the increase of the electrode adhesion strength was increased. If the rate is within -3%, it is judged as acceptable.
Indicated by a mark. For samples that were outside the scope of the invention,
The evaluation was rejected and represented by the mark x.
【００１８】[0018]
【表１】 [Table 1]
【００１９】[0019]
【表２】 [Table 2]
【００２０】[0020]
【表３】 [Table 3]
【００２１】[0021]
【表４】 [Table 4]
【００２２】[0022]
【表５】 [Table 5]
【００２３】[0023]
【表６】 [Table 6]
【００２４】[0024]
【表７】 [Table 7]
【００２５】まず、表７に示した従来の厚膜電極ペース
ト、すなわちガラス粉末として鉛系ガラスを用いた試料
４３、硼酸バリウム亜鉛系ガラスを用いた試料４４、硼
珪酸ビスマス系ガラスを用いた試料４５の測定結果から
明らかであるように、従来技術の基準とした試料４３に
対して、試料４４は静電容量が目的とする１ｎＦに達せ
ず大幅に小さく劣り、電極密着強度の従来比増減も−３
２．９１％で大幅に劣った。また試料４４も、誘電体損
失が０．８０％と大きく、従来比増減は８６．０５％で
大幅に劣った。First, the conventional thick film electrode paste shown in Table 7, ie, a sample 43 using lead-based glass as the glass powder, a sample 44 using barium zinc borate-based glass, and a sample using bismuth borosilicate-based glass As is clear from the measurement results of Sample 45, Sample 44 has a capacitance that does not reach the target value of 1 nF, is much smaller and inferior to Sample 43, which is the reference of the prior art, and the electrode adhesion strength is also increased or decreased compared to the conventional electrode. -3
It was significantly worse at 2.91%. In sample 44, the dielectric loss was as large as 0.80%, and the change was 86.05%, which was significantly inferior.
【００２６】本発明の実施例である表１〜３、すなわち
導電粉末としてＡｇを用いた試料１〜２１のうち、酸化
カルシウム，酸化ストロンチウム，酸化バリウムからな
るアルカリ土類酸化物が１０〜５０モル％、酸化ビスマ
スがＢｉ2Ｏ3換算で１０〜５０モル％、酸化硼素がＢ2
Ｏ3換算で２０〜８０モル％からなる試料２〜６，９〜
１３，１６〜２０は、静電容量は１．０５〜１．１０、
誘電体損失は０．３８〜０．４４％、電極密着強度は
７．９〜１０．５で何れも優れ、試料４３と比較した従
来比増減値は、誘電体損失については２．３３〜−１
１．６３％で減少する傾向にあり、電極密着強度につい
ては０．００〜３２．９１％で増加する傾向が見られ
た。表１〜３の試料についての３元組成図を図２に示
す。In Tables 1 to 3, which are examples of the present invention, ie, among Samples 1 to 21 using Ag as the conductive powder, 10 to 50 mol of alkaline earth oxide composed of calcium oxide, strontium oxide, and barium oxide was used. %, 10 to 50 mole percent bismuth oxide in terms of Bi 2 O 3, boron oxide B 2
Samples 2 to 6, 9 to 80% by mole in terms of O 3
13, 16 to 20, the capacitance is 1.05 to 1.10,
The dielectric loss is 0.38 to 0.44%, and the electrode adhesion strength is 7.9 to 10.5, which are all excellent. The increase / decrease value of the dielectric loss compared to the sample 43 is 2.33 to- 1
It tended to decrease at 1.63%, and the electrode adhesion strength tended to increase at 0.00 to 32.91%. FIG. 2 shows a ternary composition diagram for the samples in Tables 1 to 3.
【００２７】さらに本発明の実施例である表４〜６、す
なわち導電粉末としてＣｕを用いた試料２２〜４２のう
ち、酸化カルシウム，酸化ストロンチウム，酸化バリウ
ムからなるアルカリ土類酸化物が１０〜３０モル％、酸
化ビスマスがＢｉ2Ｏ3換算で１０〜３０モル％、酸化硼
素がＢ2Ｏ3換算で４０〜８０モル％からなる試料２５〜
２７，３２〜３４，３９〜４１は、静電容量は１．０８
〜１．１１、誘電体損失は０．３９〜０．４４％、電極
密着強度は８．２〜９．１で何れも優れ、試料４３と比
較した従来比増減値は、誘電体損失については０．００
〜−１１．６３％で減少する傾向にあり、電極密着強度
については０．００〜１５．１９％で増加する傾向が見
られた。表４〜６の試料についての３元組成図を図３に
示す。Further, in Tables 4 to 6, which are examples of the present invention, that is, among Samples 22 to 42 using Cu as the conductive powder, 10 to 30 alkaline earth oxides composed of calcium oxide, strontium oxide, and barium oxide were used. mol%, 10 to 30 mole percent bismuth oxide in terms of Bi 2 O 3, samples 25 to which boron oxide is composed of 40 to 80 mol% in terms of B 2 O 3
27, 32 to 34, 39 to 41 have a capacitance of 1.08
~ 1.11, dielectric loss is 0.39 ~ 0.44%, electrode adhesion strength is 8.2 ~ 9.1, which are all excellent. 0.00
-11.63%, and the electrode adhesion strength tended to increase at 0.00-15.19%. FIG. 3 shows ternary composition diagrams for the samples of Tables 4 to 6.
【００２８】これに対して、試料１，７，８，１４，１
５，２１〜２４，２９〜３１，３６〜３８は、誘電体損
失あるいは電極密着強度の従来比増減において｜３％｜
以上の劣化が見られたため、本発明の範囲外となった。On the other hand, samples 1, 7, 8, 14, 1
5, 21 to 24, 29 to 31, and 36 to 38 indicate that | 3% |
Since the above deterioration was observed, it was out of the scope of the present invention.
【００２９】なお、本発明の実施例は、Ｃａ，Ｓｒ，Ｂ
ａから選ばれる１種のアルカリ土類酸化物と、酸化ビス
マスと、酸化硼素とからなる３元系ガラス粉末を用いた
が、上記アルカリ土類金属を１種ずつ添加した添加した
実施例１〜４２は、アルカリ土類金属の添加量がいずれ
も１０〜３０モル％の範囲内であることから、アルカリ
土類金属がＣａ，Ｓｒ，Ｂａから選ばれる1種以上から
なる３元系ないし５元系ガラス粉末を選択しても構わな
い。In the embodiment of the present invention, Ca, Sr, B
A ternary glass powder composed of one kind of alkaline earth oxide selected from a, bismuth oxide and boron oxide was used, but Examples 1 to 3 were added in which the above alkaline earth metals were added one by one. 42 is a ternary to quinary element composed of at least one element selected from Ca, Sr, and Ba, since the amount of addition of the alkaline earth metal is in the range of 10 to 30 mol%. A system glass powder may be selected.
【００３０】[0030]
【発明の効果】以上のように本発明の厚膜電極ペースト
によれば、Ａｇからなる導電粉末と、ガラス粉末と、ビ
ヒクルとを含有し、前記ガラス粉末は、酸化カルシウ
ム，酸化ストロンチウム，酸化バリウムから選ばれるア
ルカリ土類酸化物を１種以上と、酸化ビスマスと、酸化
硼素とを含有し、それぞれをＭＯ（ＭＯはＣａＯ，Ｓｒ
Ｏ，ＢａＯの合計）、Ｂｉ2Ｏ3，Ｂ2Ｏ3と表したとき、
ガラス組成１００モル％に対して、１０≦ＭＯ≦３０モ
ル％、１０≦Ｂｉ2Ｏ3≦５０モル％、２０≦Ｂ2Ｏ3≦６
０モル％の範囲にあることを特徴とすることで、従来の
鉛系ガラスと同等あるいはそれ以上の電極密着強度、電
気特性が取得できる。As described above, according to the thick film electrode paste of the present invention, a conductive powder made of Ag, a glass powder, and a vehicle are contained, and the glass powder is made of calcium oxide, strontium oxide, barium oxide. Containing at least one alkaline earth oxide selected from the group consisting of bismuth oxide and boron oxide, each of which is MO (MO is CaO, Sr
O, BaO), Bi 2 O 3 and B 2 O 3 ,
10 ≦ MO ≦ 30 mol%, 10 ≦ Bi 2 O 3 ≦ 50 mol%, 20 ≦ B 2 O 3 ≦ 6 with respect to 100 mol% of the glass composition.
By being characterized by being in the range of 0 mol%, it is possible to obtain an electrode adhesion strength and an electrical property equal to or higher than that of a conventional lead-based glass.
【００３１】また、Ｃｕからなる導電粉末と、ガラス粉
末と、ビヒクルとを含有し、前記ガラス粉末は、酸化カ
ルシウム，酸化ストロンチウム，酸化バリウムから選ば
れるアルカリ土類酸化物を１種以上と、酸化ビスマス
と、酸化硼素とを含有し、それぞれをＭＯ（ＭＯはＣａ
Ｏ，ＳｒＯ，ＢａＯの合計）、Ｂｉ2Ｏ3，Ｂ2Ｏ3と表し
たとき、ガラス組成１００モル％に対して、１０≦ＭＯ
≦３０モル％、１０≦Ｂｉ2Ｏ3≦３０モル％、４０≦Ｂ
2Ｏ3≦８０モル％の範囲にあることを特徴とすること
で、従来の鉛系ガラスと同等あるいはそれ以上の電極密
着強度、電気特性が取得できる。The glass powder contains a conductive powder made of Cu, a glass powder, and a vehicle, and the glass powder contains one or more alkaline earth oxides selected from calcium oxide, strontium oxide, and barium oxide. Bismuth and boron oxide are contained, and MO (MO is Ca
O, SrO, and BaO), Bi 2 O 3 , and B 2 O 3.
≦ 30 mol%, 10 ≦ Bi 2 O 3 ≦ 30 mol%, 40 ≦ B
By being characterized by being in the range of 2 O 3 ≦ 80 mol%, it is possible to obtain an electrode adhesion strength and an electrical property equal to or higher than that of a conventional lead-based glass.
【図１】本発明に係る一つの実施の形態のセラミック電
子部品の断面図である。FIG. 1 is a cross-sectional view of a ceramic electronic component according to one embodiment of the present invention.
【図２】本発明の請求項１に係る厚膜電極ペーストの３
元組成図である。FIG. 2 shows 3 of the thick film electrode paste according to claim 1 of the present invention.
It is an original composition figure.
【図３】本発明の請求項２に係る厚膜電極ペーストの３
元組成図である。FIG. 3 shows 3 of the thick film electrode paste according to claim 2 of the present invention.
It is an original composition figure.
Claims (3)
る鉛フリー厚膜電極ペーストであって、 Ａｇからなる導電粉末と、ガラス粉末と、ビヒクルとを
含有し、 前記ガラス粉末は、酸化カルシウム，酸化ストロンチウ
ム，酸化バリウムから選ばれるアルカリ土類酸化物を１
種以上と、酸化ビスマスと、酸化硼素とを含有し、それ
ぞれをＭＯ（ＭＯはＣａＯ，ＳｒＯ，ＢａＯの合計）、
Ｂｉ2Ｏ3，Ｂ2Ｏ3と表したとき、ガラス組成１００モル
％に対して、 １０≦ＭＯ≦３０モル％ １０≦Ｂｉ2Ｏ3≦５０モル％ ２０≦Ｂ2Ｏ3≦６０モル％ の範囲にあることを特徴とする厚膜電極ペースト。1. A lead-free thick film electrode paste used for forming electrodes of a ceramic electronic component, comprising a conductive powder made of Ag, a glass powder, and a vehicle, wherein the glass powder contains calcium oxide, 1 alkaline earth oxide selected from strontium oxide and barium oxide
Containing at least one species, bismuth oxide, and boron oxide, each of which is MO (MO is the sum of CaO, SrO, and BaO);
When represented by Bi 2 O 3 and B 2 O 3 , 10 ≦ MO ≦ 30 mol% 10 ≦ Bi 2 O 3 ≦ 50 mol% 20 ≦ B 2 O 3 ≦ 60 mol% with respect to 100 mol% of the glass composition. Thick electrode paste, characterized by being in the range of:
る鉛フリー厚膜電極ペーストであって、 Ｃｕからなる導電粉末と、ガラス粉末と、ビヒクルとを
含有し、 前記ガラス粉末は、酸化カルシウム，酸化ストロンチウ
ム，酸化バリウムから選ばれるアルカリ土類酸化物を１
種以上と、酸化ビスマスと、酸化硼素とを含有し、それ
ぞれをＭＯ（ＭＯはＣａＯ，ＳｒＯ，ＢａＯの合計）、
Ｂｉ2Ｏ3，Ｂ2Ｏ3と表したとき、ガラス組成１００モル
％に対して、 １０≦ＭＯ≦３０モル％ １０≦Ｂｉ2Ｏ3≦３０モル％ ４０≦Ｂ2Ｏ3≦８０モル％ の範囲にあることを特徴とする厚膜電極ペースト。2. A lead-free thick film electrode paste used for forming electrodes of a ceramic electronic component, comprising a conductive powder made of Cu, a glass powder, and a vehicle, wherein the glass powder contains calcium oxide, 1 alkaline earth oxide selected from strontium oxide and barium oxide
Containing at least one species, bismuth oxide, and boron oxide, each of which is MO (MO is the sum of CaO, SrO, and BaO);
When expressed as Bi 2 O 3 and B 2 O 3 , 10 ≦ MO ≦ 30 mol% 10 ≦ Bi 2 O 3 ≦ 30 mol% 40 ≦ B 2 O 3 ≦ 80 mol% with respect to the glass composition of 100 mol%. Thick electrode paste, characterized by being in the range of:
００体積％に対して１〜１０体積％であることを特徴と
する請求項１または請求項２に記載の厚膜電極ペース
ト。3. The amount of the glass powder to be added is as follows.
The thick-film electrode paste according to claim 1 or 2, wherein the amount is 1 to 10% by volume with respect to 00% by volume.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29975599A JP2001118427A (en) | 1999-10-21 | 1999-10-21 | Thick film electrode paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29975599A JP2001118427A (en) | 1999-10-21 | 1999-10-21 | Thick film electrode paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001118427A true JP2001118427A (en) | 2001-04-27 |
Family
ID=17876596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29975599A Pending JP2001118427A (en) | 1999-10-21 | 1999-10-21 | Thick film electrode paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001118427A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311481C (en) * | 2002-12-27 | 2007-04-18 | 上海维安热电材料股份有限公司 | Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor |
| WO2010026952A1 (en) * | 2008-09-04 | 2010-03-11 | 日本電気硝子株式会社 | Glass composition for electrode formation and electrode formation material |
| JP2010083748A (en) * | 2008-09-04 | 2010-04-15 | Nippon Electric Glass Co Ltd | Glass composition for electrode formation and electrode formation material |
| JP2011204759A (en) * | 2010-03-24 | 2011-10-13 | Mitsubishi Materials Corp | Conductive composition and method of manufacturing solar cell using the same, and solar cell |
| JP2011204760A (en) * | 2010-03-24 | 2011-10-13 | Mitsubishi Materials Corp | Conductive composition and method of manufacturing solar cell using the same, and solar cell |
| JP2016190303A (en) * | 2015-03-31 | 2016-11-10 | 日本タングステン株式会社 | Electrode for discharge processing and manufacturing method therefor |
| CN106328251A (en) * | 2016-08-18 | 2017-01-11 | 陆川县华鑫电子厂 | Thick film resistor paste and preparation method thereof |
-
1999
- 1999-10-21 JP JP29975599A patent/JP2001118427A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1311481C (en) * | 2002-12-27 | 2007-04-18 | 上海维安热电材料股份有限公司 | Method for producing environment protection ceramic positive temperature coefficient thermosensitive resistor |
| WO2010026952A1 (en) * | 2008-09-04 | 2010-03-11 | 日本電気硝子株式会社 | Glass composition for electrode formation and electrode formation material |
| JP2010083748A (en) * | 2008-09-04 | 2010-04-15 | Nippon Electric Glass Co Ltd | Glass composition for electrode formation and electrode formation material |
| JP2011204759A (en) * | 2010-03-24 | 2011-10-13 | Mitsubishi Materials Corp | Conductive composition and method of manufacturing solar cell using the same, and solar cell |
| JP2011204760A (en) * | 2010-03-24 | 2011-10-13 | Mitsubishi Materials Corp | Conductive composition and method of manufacturing solar cell using the same, and solar cell |
| JP2016190303A (en) * | 2015-03-31 | 2016-11-10 | 日本タングステン株式会社 | Electrode for discharge processing and manufacturing method therefor |
| CN106328251A (en) * | 2016-08-18 | 2017-01-11 | 陆川县华鑫电子厂 | Thick film resistor paste and preparation method thereof |
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