CN102496431A - Manufacturing method of platinum film resistor chip for temperature sensor - Google Patents
Manufacturing method of platinum film resistor chip for temperature sensor Download PDFInfo
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- CN102496431A CN102496431A CN2011104117576A CN201110411757A CN102496431A CN 102496431 A CN102496431 A CN 102496431A CN 2011104117576 A CN2011104117576 A CN 2011104117576A CN 201110411757 A CN201110411757 A CN 201110411757A CN 102496431 A CN102496431 A CN 102496431A
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- ceramic substrate
- alumina ceramic
- film resistor
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- resistive element
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Abstract
The invention discloses a manufacturing method of a platinum film resistor chip for a temperature sensor, belonging to the chip-type film resistor manufacturing method. The invention aims at providing a high-productivity and low-cost chip-type film resistor manufacturing method. The method comprises the following steps of: polishing and cleaning a ceramic substrate, making a resistor body, executing heat treatment and laser resistor trimming, encapsulating with glass, sintering and packaging. Specifically, the method comprises the following steps of: polishing the substrate, cleaning the substrate, sputtering a metallic platinum layer, executing heat treatment, forming the resistor body by photoetching, trimming, printing a glass body, sintering the substrate and welding leads. The method has the advantages of high productivity, low cost and the like, thereby being an ideal method for large-scale production of the platinum film resistor chips.
Description
Technical field
The present invention relates to a kind of manufacturing approach of resistor, relate in particular to a kind of manufacturing approach of film resistor chip.
Background technology:As everyone knows, the resistance value of metal platinum (Pt) is linear change with temperature basically in certain temperature range, and has good reproducibility and stability.The scales that utilizes this physical characteristic of metal platinum to process is platinum resistance temperature sensor, and it has characteristics such as precision height, good stability, Applicable temperature scope be wide, is the most frequently used a kind of Temperature Detector of middle low-temperature space.
At present, have only several companies few in number to grasp the platinum film resistor chip fabrication techniques in the world, domestic most producers can only produce platinum resistance temperature sensor through the mode of buying platinum film resistor chip assembling probe; Therefore, for breaking external monopolization, press for independent development and produce the platinum film resistor chip.
Summary of the invention:To the above-mentioned defective that exists in the prior art, the present invention aims to provide the manufacturing approach of a kind of temperature sensor with the platinum film resistor chip.
To achieve these goals, the technical scheme that adopts of the present invention comprises ceramic substrate polishing and cleaning, resistive element making, heat treatment, laser resistor trimming, glass encapsulating, sintering, encapsulation; It is characterized in that concrete grammar is following:
1) polishing grinding alumina ceramic substrate guarantees surface roughness≤0.05 μ m;
2) with trichloroethanes or absolute ethyl alcohol above-mentioned alumina ceramic substrate is carried out ultrasonic waves for cleaning 5～10min, drying;
3) being in the environment of 10:1 at argon gas and oxygen volume ratio, is the metal platinum thin layer of 1.2～3.5 μ m with the alumina ceramic substrate surface deposition thickness of mode after cleaning of magnetron sputtering;
The alumina ceramic substrate that 4) will deposit the metal platinum thin layer heats 1h in 850 ℃ firing furnace;
5) with method etching resistive element on the metal platinum thin layer of photoetching;
6) using power is that 0.8～1W, Q switching frequency are that 600～800P/mm, resistance trimming speed are that the laser of 100～300mm/s carries out the cutting of S shape to resistive element, regulates its resistance and reaches target resistance and precision;
7), guarantee to reach 20～30 μ m after the print thickness drying, and expose electrode at resistive element surface printing vitreum;
8) will be printed with Vitrea alumina ceramic substrate sintering 40min, temperature is 600 ℃;
9) printing epoxy resin covers pad drying behind welding lead on the electrode.
Compare with prior art; The present invention is owing to adopted technique scheme; Mixed oxygen during with the mode plated metal platinum of magnetron sputtering on the alumina ceramic substrate surface; Therefore the impurity that in follow-up heat treatment process, when oxygen is overflowed from the metal platinum rete, can sputter be introduced in the metal platinum thin layer is taken out of, thereby helps improving the purity of metal platinum rete, and its temperature coefficient of resistance can reach (3850 ± 10) * PPM/ ℃.In addition, in the magnetron sputtering process, because deposition rate is fast, substrate Yin Wendu is lower and have little time to form complete lattice, can produce room, dislocation, grain boundary etc. in the structure of metal platinum rete and claim lattice irregular effects; Event need be eliminated through follow-up heat treatment.Can improve the following characteristic of metal platinum thin layer through heat treatment:
make the metal platinum thin layer by the steady state-transition that is situated between to latent attitude; Eliminate defectives such as room, dislocation, thereby can improve the stability of platinum film resistor;
makes crystal grain increase, reduce grain boundary; Thereby can reduce the resistivity of film, increase resistance-temperature characteristic; 3. can make gaseous state, solid impurity in the metal platinum thin layer, therefore improve the purity of metal platinum thin layer; 4. can strengthen the adhesive force of metal platinum; 5. can eliminate the stress of metal platinum thin layer and alumina ceramic substrate, improve the intensity of metal platinum thin layer.
Embodiment:Embodiment below in conjunction with concrete is described further the present invention:
1) ceramic substrate of alumina content>=99.6% is polished, guarantee surface roughness≤0.05 μ m;
2) above-mentioned alumina ceramic substrate being put into frequency is that 10～20KHz, power are the ultrasonic cleaner of 25～50W, and using concentration is that analytically pure trichloroethanes or absolute ethyl alcohol clean 5～10min to it, dry 25min under 150 ℃;
3) being in the environment of 10:1 at argon gas and oxygen volume ratio, is the metal platinum thin layer of 1.2～3.5 μ m with the alumina ceramic substrate surface deposition thickness of mode after cleaning of magnetron sputtering;
The alumina ceramic substrate that 4) will deposit the metal platinum thin layer heats 1h in 850 ℃ firing furnace;
5) with method etching resistive element on the metal platinum thin layer of photoetching;
6) using power is that 0.8～1W, Q switching frequency are that 600～800P/mm, resistance trimming speed are that the laser of 100～300mm/s carries out the cutting of S shape to resistive element, regulates its resistance and reaches target resistance and precision;
7), guarantee to reach 20～30 μ m after the print thickness drying, and expose electrode at resistive element surface printing vitreum; Dry 10min under 125 ℃;
8) will be printed with Vitrea alumina ceramic substrate sintering 40min, temperature is 600 ℃;
9) printing epoxy resin covers pad behind welding lead on the electrode, solidifies 25～35min down at 200～230 ℃.
Claims (1)
1. a temperature sensor comprises ceramic substrate polishing and cleaning, resistive element making, heat treatment, laser resistor trimming, glass encapsulating, sintering, encapsulation with the manufacturing approach of platinum film resistor chip; It is characterized in that concrete grammar is following:
1) polishing grinding alumina ceramic substrate guarantees surface roughness≤0.05 μ m;
2) with trichloroethanes or absolute ethyl alcohol above-mentioned alumina ceramic substrate is carried out ultrasonic waves for cleaning 5～10min, drying;
3) being in the environment of 10:1 at argon gas and oxygen volume ratio, is the metal platinum thin layer of 1.2～3.5 μ m with the alumina ceramic substrate surface deposition thickness of mode after cleaning of magnetron sputtering;
The alumina ceramic substrate that 4) will deposit the metal platinum thin layer heats 1h in 850 ℃ firing furnace;
5) with method etching resistive element on the metal platinum thin layer of photoetching;
6) using power is that 0.8～1W, Q switching frequency are that 600～800P/mm, resistance trimming speed are that the laser of 100～300mm/s carries out the cutting of S shape to resistive element, regulates its resistance and reaches target resistance and precision;
7), guarantee to reach 20～30 μ m after the print thickness drying, and expose electrode at resistive element surface printing vitreum;
8) will be printed with Vitrea alumina ceramic substrate sintering 40min, temperature is 600 ℃;
9) printing epoxy resin covers pad drying behind welding lead on the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104117576A CN102496431A (en) | 2011-12-12 | 2011-12-12 | Manufacturing method of platinum film resistor chip for temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104117576A CN102496431A (en) | 2011-12-12 | 2011-12-12 | Manufacturing method of platinum film resistor chip for temperature sensor |
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| Publication Number | Publication Date |
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| CN102496431A true CN102496431A (en) | 2012-06-13 |
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| CN2011104117576A Pending CN102496431A (en) | 2011-12-12 | 2011-12-12 | Manufacturing method of platinum film resistor chip for temperature sensor |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021605A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Production method for chip type platinum thermosensitive resistors |
| CN103487160A (en) * | 2013-09-27 | 2014-01-01 | 北京理工大学 | Method for manufacturing Pt resistor temperature sensor |
| CN105632670A (en) * | 2016-02-19 | 2016-06-01 | 中国振华集团云科电子有限公司 | Manufacturing method of platinum film thermal resistor |
| CN105651411A (en) * | 2015-12-30 | 2016-06-08 | 中国电子科技集团公司第四十九研究所 | High-temperature platinum resistor package structure and preparation method thereof |
| CN106997217A (en) * | 2017-04-28 | 2017-08-01 | 济宁五颗星表计有限公司 | Homestat is measured in temperature control |
| CN108168723A (en) * | 2017-12-22 | 2018-06-15 | 雷念程 | A kind of film temperature sensor chip and its manufacturing method |
| CN111189554A (en) * | 2020-02-17 | 2020-05-22 | 上海福宜纳米薄膜技术有限公司 | Film platinum resistor temperature sensor and manufacturing method thereof |
| CN113314286A (en) * | 2021-05-28 | 2021-08-27 | 常州泰捷防雷科技有限公司 | High-strength piezoresistor and preparation method thereof |
| CN114807859A (en) * | 2022-03-17 | 2022-07-29 | 江苏精瓷智能传感技术研究院有限公司 | Platinum film with high resistance temperature coefficient and preparation method thereof |
-
2011
- 2011-12-12 CN CN2011104117576A patent/CN102496431A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021605A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Production method for chip type platinum thermosensitive resistors |
| CN103021605B (en) * | 2012-12-19 | 2016-08-03 | 中国振华集团云科电子有限公司 | Chip type platinum thermal resistor manufacture method |
| CN103487160A (en) * | 2013-09-27 | 2014-01-01 | 北京理工大学 | Method for manufacturing Pt resistor temperature sensor |
| CN105651411A (en) * | 2015-12-30 | 2016-06-08 | 中国电子科技集团公司第四十九研究所 | High-temperature platinum resistor package structure and preparation method thereof |
| CN105651411B (en) * | 2015-12-30 | 2018-06-29 | 中国电子科技集团公司第四十九研究所 | A kind of high temperature platinum resistance encapsulating structure and preparation method thereof |
| CN105632670A (en) * | 2016-02-19 | 2016-06-01 | 中国振华集团云科电子有限公司 | Manufacturing method of platinum film thermal resistor |
| CN105632670B (en) * | 2016-02-19 | 2018-06-19 | 中国振华集团云科电子有限公司 | The manufacturing method of Pt thin film thermal resistors device |
| CN106997217A (en) * | 2017-04-28 | 2017-08-01 | 济宁五颗星表计有限公司 | Homestat is measured in temperature control |
| CN108168723A (en) * | 2017-12-22 | 2018-06-15 | 雷念程 | A kind of film temperature sensor chip and its manufacturing method |
| CN111189554A (en) * | 2020-02-17 | 2020-05-22 | 上海福宜纳米薄膜技术有限公司 | Film platinum resistor temperature sensor and manufacturing method thereof |
| CN113314286A (en) * | 2021-05-28 | 2021-08-27 | 常州泰捷防雷科技有限公司 | High-strength piezoresistor and preparation method thereof |
| CN114807859A (en) * | 2022-03-17 | 2022-07-29 | 江苏精瓷智能传感技术研究院有限公司 | Platinum film with high resistance temperature coefficient and preparation method thereof |
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Application publication date: 20120613 |