CN105651411A - High-temperature platinum resistor package structure and preparation method thereof - Google Patents
High-temperature platinum resistor package structure and preparation method thereof Download PDFInfo
- Publication number
- CN105651411A CN105651411A CN201511029261.7A CN201511029261A CN105651411A CN 105651411 A CN105651411 A CN 105651411A CN 201511029261 A CN201511029261 A CN 201511029261A CN 105651411 A CN105651411 A CN 105651411A
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- platinum
- platinum resistance
- high temperature
- slurry
- encapsulating structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/024—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being hermetically sealed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
The invention provides a high-temperature platinum resistor package structure and a preparation method thereof, relates to a resistor package structure and a preparation method thereof, and aims at solving the problem that an existing platinum resistor cannot be used in a high-temperature environment. The high-temperature platinum resistor package structure comprises a substrate, a platinum resistor and a high-temperature protection layer. The method comprises the following steps: carrying out platinum paste sintering at one side of a ceramic chip to obtain a platinum wire, a platinum resistor installation bonding pad and a front bonding pad; (2) carrying out platinum paste sintering at the other side to obtain a back bonding pad; (3) connecting the resistor and the substrate by platinum paste sintering; (4) carrying out high-temperature glass paste sintering to obtain the high-temperature protection layer; and (5) carrying out chamfering processing to finish the package structure. The high-temperature platinum resistor package structure is high in measurement accuracy, good in stability and simple in preparation technology, and can be applied to temperature measurement in the high-temperature environment; the welding reliability of the bonding plate is increased; and the cost is saved. The measurement temperature of the platinum resistor is improved to more than or equal to 600 DEG C; the measurement range is -70 to 1000 DEG C; and the measurement accuracy can reach +/-0.5%.
Description
Technical field
The present invention relates to a kind of resistive seal assembling structure and preparation method thereof.
Background technology
At present, measure temperature in high temperature environments, it is common that use thermocouple, thermocouple by hot spot-effect to temperature measure, its shortcoming be stability and precision poor; Platinum resistance, its resistance can change along with the change of temperature, precision is higher, in field extensive uses such as medical treatment, motor, industry, temperature computation, satellite, meteorologies, but adopt platinum resistance to measure, although precision is higher, but poor stability, being difficult to apply in hot environment, the maximum operation (service) temperature of current platinum resistance is 600 DEG C.
Summary of the invention
The invention aims to solve the problem that current platinum resistance cannot use in hot environment, and a kind of high temperature platinum resistance encapsulating structure provided and preparation method thereof.
A kind of high temperature platinum resistance encapsulating structure, it includes substrate, platinum resistance and high temperature finishes; Described substrate includes potsherd, platinum wire, platinum resistance installation pad, front pad, backside pads; Described platinum resistance is installed on substrate one end, and platinum resistance is installed pad and relied on platinum slurry sintering to be connected with the platinum resistance on substrate.
The method preparing above-mentioned high temperature platinum resistance encapsulating structure, realizes according to the following steps:
One, printing or coating platinum slurry on the side of potsherd 1, form platinum wire 4 after sintered, with platinum resistance, pad 5 is installed, printing or coating platinum content are the platinum slurry of 10��30Wt.%, 40��60Wt.%, 70��90Wt.% successively again, and form front pad 2 after sintering respectively;
Two, on the opposite side of above-mentioned potsherd 1 successively printing or coating platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry, and respectively sintering after formed backside pads 3;
Three, platinum resistance 8 is installed on one end of substrate 6, and platinum resistance 8 is installed pad 5 with the platinum resistance on substrate and is connected, and is connected by platinum slurry sintering;
Four, it is coated with high temp glass slurry at platinum resistance 8 and platinum wire 4, after sintered, forms high temperature finishes 7;
Five, substrate 6 is carried out chamfered on beveler, form high temperature platinum resistance encapsulating structure.
Beneficial effects of the present invention:
High temperature platinum resistance encapsulating structure of the present invention, certainty of measurement is high, good stability, it is possible to for the temperature survey of hot environment.
The preparation technology of high temperature platinum resistance encapsulating structure of the present invention is simple, and reliability is high.
High temperature platinum resistance encapsulating structure can realize platinum resistance temperature survey in high temperature environments; this encapsulating structure comprises substrate, platinum resistance, the several part of high temperature finishes; substrate includes potsherd, platinum wire, platinum resistance installation pad, front pad, backside pads; platinum resistance is installed on substrate one end, and platinum resistance is installed pad and relied on platinum slurry sintering to be connected with the platinum resistance on substrate. Front pad and backside pads adopt gradient-structure design, make adhesive force between this thick film pad and substrate be brought up to 24N by 5N, add the reliability of pad solder, both ensured the bond strength between substrate and pad, reach again to save the purpose of cost. High temperature finishes is scribbled with platinum resistance place at platinum wire; present invention could apply to the high temperature measurement of the field complex environments such as generating, chemical industry, aviation, automobile; the measurement temperature of platinum resistance can be brought up to more than 600 DEG C; measurement ranges for-70 DEG C��1000 DEG C, and certainty of measurement can reach �� 0.5%.
Accompanying drawing explanation
Fig. 1 is the structural representation of substrate in the present invention, and wherein 1 represents potsherd, and 2 represent front pad, and 3 represent backside pads, and 4 represent platinum wire, and 5 represent that platinum resistance installs pad;
Fig. 2 is the schematic diagram of high temperature platinum resistance encapsulating structure in the present invention, and wherein 6 represent substrate; 7 represent high temperature finishes; 8 represent platinum resistance;
Fig. 3 is the generalized section of front pad and backside pads in the present invention.
Detailed description of the invention
Technical solution of the present invention is not limited to act detailed description of the invention set forth below, also includes the combination in any between each detailed description of the invention.
Detailed description of the invention one: shown in Fig. 1, Fig. 2, present embodiment high temperature platinum resistance encapsulating structure, it includes substrate 6, platinum resistance 8 and high temperature finishes 7; Described substrate 6 includes potsherd 1, platinum wire 4, platinum resistance installation pad 5, front pad 2, backside pads 3; Described platinum resistance 8 is installed on substrate 6 one end, and platinum resistance 8 is installed pad 5 and relied on platinum slurry sintering to be connected with the platinum resistance on substrate 6.
Detailed description of the invention two: present embodiment and detailed description of the invention one the difference is that, described potsherd 1 is aluminium oxide ceramics or zirconia ceramics. Other is identical with detailed description of the invention one.
Detailed description of the invention three: present embodiment and detailed description of the invention one the difference is that, described high temperature finishes 7 be by high temp glass slurry sintered after formed. Other is identical with detailed description of the invention one.
Detailed description of the invention four: shown in Fig. 3, present embodiment and detailed description of the invention one the difference is that, described front pad 2 and backside pads 3 are gradient-structure. Other is identical with detailed description of the invention one.
Detailed description of the invention five: present embodiment and detailed description of the invention four the difference is that, described gradient-structure be by platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry sintered after formed. Other is identical with detailed description of the invention one.
Detailed description of the invention six: the preparation method of present embodiment high temperature platinum resistance encapsulating structure, realizes according to the following steps:
One, printing or coating platinum slurry on the side of potsherd 1, form platinum wire 4 after sintered, with platinum resistance, pad 5 is installed, printing or coating platinum content are the platinum slurry of 10��30Wt.%, 40��60Wt.%, 70��90Wt.% successively again, and form front pad 2 after sintering respectively;
Two, on the opposite side of above-mentioned potsherd 1 successively printing or coating platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry, and respectively sintering after formed backside pads 3;
Three, platinum resistance 8 is installed on one end of substrate 6, and platinum resistance 8 is installed pad 5 with the platinum resistance on substrate 6 and is connected, and is connected by platinum slurry sintering;
Four, it is coated with high temp glass slurry at platinum resistance 8 and platinum wire 4, after sintered, forms high temperature finishes 7;
Five, substrate 6 is carried out chamfered on beveler, form high temperature platinum resistance encapsulating structure.
The slurry of platinum described in present embodiment and high temp glass slurry are commercially available prod.
Chamfered described in present embodiment, is that the concrete applied environment according to high temperature platinum resistance encapsulating structure processes accordingly.
Detailed description of the invention seven: present embodiment and detailed description of the invention six are the difference is that, step one, sintering temperature is 850��1350 DEG C in two, three and four. Other step and parameter and detailed description of the invention six are identical.
Detailed description of the invention eight: present embodiment and detailed description of the invention six the difference is that, in step one, the thickness of printing or coating platinum slurry is 10��30 ��m. Other step and parameter and detailed description of the invention six are identical.
Detailed description of the invention nine: present embodiment and detailed description of the invention six the difference is that, in step one, printing or coating platinum content are the gross thickness of the platinum slurry of 10��30Wt.%, 40��60Wt.%, 70��90Wt.% is 20��60 ��m. Other step and parameter and detailed description of the invention six are identical.
Detailed description of the invention ten: present embodiment and detailed description of the invention six the difference is that, in step 2, printing or coating platinum content are the gross thickness of the platinum slurry of 10��30Wt.%, 40��60Wt.%, 70��90Wt.% is 20��60 ��m. Other step and parameter and detailed description of the invention six are identical.
Detailed description of the invention 11: present embodiment and detailed description of the invention six the difference is that, the thickness being coated with high temp glass slurry in step 4 is 100��500 ��m. Other step and parameter and detailed description of the invention six are identical.
Adopt following example checking beneficial effects of the present invention:
Embodiment:
Shown in Fig. 1, Fig. 2 and Fig. 3,
The preparation method of high temperature platinum resistance encapsulating structure, realizes according to the following steps:
One, printing or coating platinum slurry on the side of potsherd 1, form platinum wire 4 after sintered, with platinum resistance, pad 5 is installed, printing or coating platinum content are the platinum slurry of 10��30Wt.%, 40��60Wt.%, 70��90Wt.% successively again, and form front pad 2 after sintering respectively;
Two, on the opposite side of above-mentioned potsherd 1 successively printing or coating platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry, and respectively sintering after formed backside pads 3;
Three, platinum resistance 8 is installed on one end of substrate 6, and platinum resistance 8 is installed pad 5 with the platinum resistance on substrate 6 and is connected, and is connected by platinum slurry sintering;
Four, it is coated with high temp glass slurry at platinum resistance 8 and platinum wire 4, after sintered, forms high temperature finishes 7;
Five, substrate 6 is carried out chamfered on beveler, form high temperature platinum resistance encapsulating structure.
Preparing gained high temperature platinum resistance encapsulating structure in the present embodiment, after tested, between pad and substrate, adhesive force is 24N, measures temperature and reaches more than 600 DEG C, measures and range for-70 DEG C��1000 DEG C, and certainty of measurement can reach �� 0.5%.
Claims (10)
1. a high temperature platinum resistance encapsulating structure, it is characterised in that it includes substrate (6), platinum resistance (8) and high temperature finishes (7); Described substrate (6) includes potsherd (1), platinum wire (4), platinum resistance installation pad (5), front pad (2), backside pads (3); Described platinum resistance (8) is installed on substrate (6) one end, and platinum resistance (8) is installed pad (5) and relied on platinum slurry sintering to be connected with the platinum resistance on substrate (6).
2. a kind of high temperature platinum resistance encapsulating structure according to claim 1, it is characterised in that described potsherd (1) is aluminium oxide ceramics or zirconia ceramics.
3. a kind of high temperature platinum resistance encapsulating structure according to claim 1, it is characterised in that described high temperature finishes (7) is to be formed afterwards by high temp glass slurry is sintered.
4. a kind of high temperature platinum resistance encapsulating structure according to claim 1, it is characterised in that described front pad (2) and backside pads (3) are gradient-structure.
5. a kind of high temperature platinum resistance encapsulating structure according to claim 1, it is characterised in that described gradient-structure be by platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry sintered after formed.
6. the method preparing a kind of high temperature platinum resistance encapsulating structure as claimed in claim 1, it is characterised in that it realizes according to the following steps:
One, printing or coating platinum slurry on the side of potsherd (1), form platinum wire (4) after sintered, with platinum resistance, pad (5) is installed, again successively printing or coating platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry, and respectively sintering after formed front pad (2);
Two, on the opposite side of above-mentioned potsherd (1) successively printing or coating platinum content be 10��30Wt.%, 40��60Wt.%, 70��90Wt.% platinum slurry, and respectively sintering after formed backside pads (3);
Platinum resistance (8) three, is installed on one end of substrate (6), and platinum resistance (8) is installed pad (5) with the platinum resistance on substrate (6) and is connected, and is connected by platinum slurry sintering;
Four, it is coated with high temp glass slurry at platinum resistance 8 and platinum wire 4, after sintered, forms high temperature finishes 7;
Five, substrate 6 is carried out chamfered on beveler, form high temperature platinum resistance encapsulating structure.
7. the preparation method of a kind of high temperature platinum resistance encapsulating structure according to claim 6, it is characterised in that step one, sintering temperature is 850��1350 DEG C in two, three and four.
8. the preparation method of a kind of high temperature platinum resistance encapsulating structure according to claim 6, it is characterised in that in step one, the thickness of printing or coating platinum slurry is 10��30 ��m.
9. the preparation method of a kind of high temperature platinum resistance encapsulating structure according to claim 6, it is characterised in that in step one, printing or coating platinum content are the gross thickness of the platinum slurry of 10��30Wt.%, 40��60Wt.%, 70��90Wt.% is 20��60 ��m.
10. the preparation method of a kind of high temperature platinum resistance encapsulating structure according to claim 6, it is characterised in that the thickness being coated with high temp glass slurry in step 4 is 100��500 ��m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511029261.7A CN105651411B (en) | 2015-12-30 | 2015-12-30 | A kind of high temperature platinum resistance encapsulating structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201511029261.7A CN105651411B (en) | 2015-12-30 | 2015-12-30 | A kind of high temperature platinum resistance encapsulating structure and preparation method thereof |
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| CN105651411A true CN105651411A (en) | 2016-06-08 |
| CN105651411B CN105651411B (en) | 2018-06-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109060159A (en) * | 2018-08-06 | 2018-12-21 | 重庆切普电子技术有限公司 | A kind of high temperature platinum resistance assemble method |
| CN112268632A (en) * | 2020-10-19 | 2021-01-26 | 中国电子科技集团公司第四十九研究所 | 1000 ℃ high-temperature-resistant metal film thermal resistor with adjustable temperature coefficient and preparation method thereof |
| CN114291783A (en) * | 2021-12-31 | 2022-04-08 | 深圳市信为科技发展有限公司 | Pressure sensor with fine multi-lead and preparation method thereof |
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| US8167192B1 (en) * | 2011-05-16 | 2012-05-01 | Ghd Korea, Inc. | Manufacturing method for ceramic heater |
| CN102496431A (en) * | 2011-12-12 | 2012-06-13 | 中国振华集团云科电子有限公司 | Manufacturing method of platinum film resistor chip for temperature sensor |
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| CN104006897A (en) * | 2014-06-12 | 2014-08-27 | 肇庆爱晟电子科技有限公司 | Fast-response thermosensitive temperature sensor and manufacturing method thereof |
| CN204007925U (en) * | 2014-07-28 | 2014-12-10 | 肇庆爱晟电子科技有限公司 | The highly reliable temperature-sensitive chip of a kind of quick response |
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2015
- 2015-12-30 CN CN201511029261.7A patent/CN105651411B/en not_active Expired - Fee Related
Patent Citations (6)
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| CN101692360A (en) * | 2009-09-10 | 2010-04-07 | 广东风华高新科技股份有限公司 | Chip type thermal resistor and manufacturing method thereof |
| US8167192B1 (en) * | 2011-05-16 | 2012-05-01 | Ghd Korea, Inc. | Manufacturing method for ceramic heater |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109060159A (en) * | 2018-08-06 | 2018-12-21 | 重庆切普电子技术有限公司 | A kind of high temperature platinum resistance assemble method |
| CN112268632A (en) * | 2020-10-19 | 2021-01-26 | 中国电子科技集团公司第四十九研究所 | 1000 ℃ high-temperature-resistant metal film thermal resistor with adjustable temperature coefficient and preparation method thereof |
| CN114291783A (en) * | 2021-12-31 | 2022-04-08 | 深圳市信为科技发展有限公司 | Pressure sensor with fine multi-lead and preparation method thereof |
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| CN105651411B (en) | 2018-06-29 |
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