CN103430245A - Metal plate low-resistance chip resistor and method for manufacturing same - Google Patents
Metal plate low-resistance chip resistor and method for manufacturing same Download PDFInfo
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- CN103430245A CN103430245A CN2012800078452A CN201280007845A CN103430245A CN 103430245 A CN103430245 A CN 103430245A CN 2012800078452 A CN2012800078452 A CN 2012800078452A CN 201280007845 A CN201280007845 A CN 201280007845A CN 103430245 A CN103430245 A CN 103430245A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C3/00—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/01—Mounting; Supporting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/245—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by mechanical means, e.g. sand blasting, cutting, ultrasonic treatment
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Abstract
The present invention includes: a step for readying a low-resistance metal plate (10) having a predetermined width and thickness; a step for applying a sand-blast treatment on the surface of the low-resistance metal plate (10); a step for forming, on each respective center section of the upper and lower surfaces of the low-resistance metal plate (10), a single insulating protective film (11a, 11b) along the length direction of the low-resistance metal plate (10) at a predetermined width; and a step for using electroplating to form, on the low-resistance metal plate (10) on both sides of the insulating protective films (11a, 11b), an electrode layer in which a front electrode (12a), a reverse electrode (12c), and an end-surface electrode (12b) are integrated. Therefore, minute unevenness is generated by the sand-blast treatment on the surface of the low-resistance metal plate (10); and as a result, there is an increase in the strength of adhesion, with respect to the surface of the metal plate (10), of the insulating protective films (11a, 11b) and the electrode layer (12a, 12c, and 12b) that are subsequently formed on the surface of the metal plate (10).
Description
Technical field
The present invention relates to metallic plate low-resistance chip resistor and manufacture method thereof.In detail, relate to adhering metallic plate low-resistance chip resistor and the manufacture method thereof of utilizing sandblast processing to improve diaphragm and electrode film.
Background technology
In the various control circuits such as rotating-speed control circuit of supply unit and motor, as the parts that detect electric current, used chip resistor, because resistance value is used resistance metallic plate for the so low-down chip resistor of resistance value of number m Ω, so be commonly referred to as the metallic plate low-resistance chip resistor.
In such metallic plate low-resistance chip resistor, there is a kind of metallic plate low-resistance chip resistor that resistance metallic plate is inserted in plastics or ceramic package and forms with metallic plate welding as electrode, but it is large that installing space becomes, and reduced high-density installation efficiency.
Therefore, the metallic plate low-resistance chip resistor that directly forms diaphragm, electrode film on resistance metallic plate is existed to demand.
Patent documentation 1:WO2008/018219
On resistance metallic plate, directly form in the metallic plate low-resistance chip resistor of diaphragm, electrode film; as Patent Document 1; in order to improve diaphragm and the electrode film adhesion with respect to resistance metallic plate, carried out alligatoring with chemical mode, but had following problem.
; the impact that chemical mode in the past (alligatoring) not only is subject to alligatoring agent concentration, temperature, impurity concentration, dip time, shake the metal structure etc. of speed, metallic plate, but also the unsteadiness that causes the value of having a resistance to change because the metallic plate meltage in chemical mode is poor.
Summary of the invention
The object of the invention is to improve diaphragm in the metallic plate low-resistance chip resistor and the electrode film adhesion with respect to resistance metallic plate.
The manufacture method of metallic plate low-resistance chip resistor for the mode of the present invention 1 that solves above-mentioned problem comprises: the step of preparing the low resistive metal plate of Rack and thickness; The surface of described metallic plate is carried out to the step of sandblast processing; Along the long side direction of described metallic plate, at the upper and lower surface central part separately of described metallic plate, form respectively the step of a bar insulation diaphragm with Rack; Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And the described metallic plate with the covering of described diaphragm and electrode film with specific length the step at transversely cutting.
The manufacture method of metallic plate low-resistance chip resistor for the mode of the present invention 2 that solves above-mentioned problem comprises: the step of preparing the low resistive metal plate of Rack and thickness; Along the long side direction of described metallic plate, at the upper and lower surface central part separately of described metallic plate, form respectively the step of a bar insulation diaphragm with Rack; The surface except the part that is formed with described diaphragm of described metallic plate is carried out to the step of sandblast processing; Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And the described metallic plate with the covering of described diaphragm and electrode film with specific length the step at transversely cutting.
The manufacture method of metallic plate low-resistance chip resistor for the mode of the present invention 3 that solves above-mentioned problem comprises: the step of preparing the low resistive metal plate of Rack and thickness; The surface of described metallic plate is carried out to the step of sandblast processing; Upper and lower surface at described metallic plate forms respectively the step of many bar insulations diaphragm with Rack; Between described diaphragm described metallic plate the step at slit shearing; Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And the described metallic plate with the covering of described diaphragm and electrode film with specific length the step at transversely cutting.
The manufacture method of metallic plate low-resistance chip resistor for the mode of the present invention 4 that solves above-mentioned problem comprises: the step of preparing the low resistive metal plate of Rack and thickness; Upper and lower surface at described metallic plate forms respectively the step of many bar insulations diaphragm with Rack; The surface except the part that is formed with described diaphragm of described metallic plate is carried out to the step of sandblast processing; Between described diaphragm described metallic plate the step at slit shearing; Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And the described metallic plate with the covering of described diaphragm and electrode film with specific length the step at transversely cutting.
For the metallic plate low-resistance chip resistor of mode of the present invention 5 that solves above-mentioned problem, utilize the described manufacture method manufacture of mode 1 to 4 any one to form.
In the present invention; because sandblast processing is carried out on the surface to the low resistive metal plate; so produced fine concavo-convexly on metal sheet surface, thereby increased the insulating properties diaphragm that after this forms and the electrode adhesion with respect to metal sheet surface on metal sheet surface.Particularly because the sandblast adopted in the present invention is physics mode, the situation of be subject to alligatoring agent concentration, temperature, impurity concentration, dip time with chemical mode (alligatoring) in the past, shaking the impacts such as metal structure of speed, metallic plate is compared, not only increase substantially the stability of surface state, but also can eliminate the unsteadiness because of the poor resistance change caused of metallic plate meltage in chemical mode.
The accompanying drawing explanation
Fig. 1 is the brief description figure of each step of the manufacture method for one embodiment of the invention is described, Fig. 1 (A) means the stereogram of the low resistive metal plate of preparation, Fig. 1 (B) means that effects on surface carries out the stereogram of the low resistive metal plate after sandblast processing, Fig. 1 (C) means along the long side direction of low resistive metal plate, upper face center position at the low resistive metal plate forms a bar insulation diaphragm with Rack, lower surface central part at the low resistive metal plate forms the stereogram of a bar insulation diaphragm with Rack, Fig. 1 (D) means in the both sides of described diaphragm and forms and be wholely set front electrode with electroplating evenly, the stereogram of the state of the electrode film of backplate and end electrode.
Fig. 2 is the profile of the X-X face in Fig. 1 (C).
Fig. 3 is the brief description figure of each step of the manufacture method for other embodiments of the invention are described, Fig. 3 (A) means the stereogram of the low resistive metal plate of preparation, Fig. 3 (B) means along the long side direction of low resistive metal plate, upper face center position at the low resistive metal plate forms a bar insulation diaphragm with Rack, lower surface central part at the low resistive metal plate forms the stereogram of a bar insulation diaphragm with Rack, Fig. 3 (C) means the stereogram that the surface except the insulating properties diaphragm is carried out to the low resistive metal plate after sandblast processing, Fig. 3 (D) means in described diaphragm both sides and forms and be wholely set front electrode with electroplating evenly, the stereogram of the state of the electrode film of backplate and end electrode.
Description of reference numerals
10 low resistive metal plates
11a, 11b insulating properties diaphragm
The 12a front electrode
The 12b end electrode
The 12c backplate
12 electrode films
Embodiment
Referring to embodiment shown in the drawings, embodiments of the present invention are described.
(embodiment 1)
Metallic plate low-resistance chip resistor and manufacture method thereof referring to accompanying drawing to one embodiment of the invention describe.
Fig. 1 is the brief description figure of each step for manufacture method of the present invention is described, Fig. 1 (A) means the low resistive metal plate 10 of preparing.
Fig. 1 (B) means the low resistive metal plate 10 after effects on surface carries out sandblast processing.
Fig. 1 (C) means the long side direction along low resistive metal plate 10, at the upper face center position of low resistive metal plate 10, with Rack, forms a bar insulation diaphragm 11a, at the lower surface central part of low resistive metal plate 10, forms the state of a bar insulation diaphragm 11b with Rack.
Fig. 1 (D) is illustrated in described diaphragm 11a, 11b both sides with electroplating the state that evenly forms the electrode film that is wholely set front electrode 12a, backplate 12c and end electrode 12b.
Fig. 2 is the profile of the X-X face in Fig. 1 (C).
In manufacture method of the present invention; by the low resistive metal plate 10 being covered by diaphragm 11a, the 11b shown in Fig. 1 (D) and Fig. 2 and electrode film 12; press the specific length of the dotted portion shown in Fig. 1 (D) and cut off successively at horizontal (X-X face), can obtain desirable metallic plate low-resistance chip resistor.
For example, shown in Fig. 2; metallic plate low-resistance chip resistor of the present invention is on the upper and lower surface of low resistive metal plate 10; diaphragm 11a, 11b with insulating properties; both sides at this diaphragm 11a, 11b have electrode film 12, and electrode film 12 is integrally formed with the layer structure of cardinal principle same thickness front electrode 12a, backplate 12c and end electrode 12b.
In Fig. 2, electrode film 12 forms four layers, and each layer for example can start to be followed successively by from inboard strike plating nickel dam, copper plate, nickel coating and tin coating.Wherein, electrode film there is no need one and is customized to four layers.
In manufacture method of the present invention, at first, as shown in Fig. 1 (A), prepared the step of the low resistive metal plate of Rack and thickness.
Alloy for the manufacture of the low resistive metal plate can be enumerated: tin-nickel alloy, manganese-copper-nickel alloy, copper-manganese-copper class alloys such as Xi class alloy, nickel-chromium class alloy, iron-well-known resistance alloys such as chromium class alloy, particularly the angle of the reliability of the adhesiveness of the electrode part of narration and low-resistance value is considered from behind, preferably uses steel class alloy or iron-chromium class alloy.
The Rack of low resistive metal plate and thickness can suitably be selected according to desirable resistance value.
In addition; as shown in Fig. 1 (A); in the situation that usually select Rack to become the cardinal principle long side direction length of the chip resistor finally obtained; as shown in Fig. 1 (C); along the long side direction of low resistive metal plate 10, at the upper face center position of low resistive metal plate 10, with Rack, form a bar insulation diaphragm 11a, at the lower surface central part of low resistive metal plate 10, with Rack, form a bar insulation diaphragm 11b.
For example, by desirable alloy pig is carried out after calendering and thermal annealing become specific thickness repeatedly by well-known method, cut into the methods such as band shape of Rack, manufacture such low resistive metal plate.
After this, as shown in Fig. 1 (B), in manufacture method of the present invention, carry out the surface of low resistive metal plate 10 is implemented the step of sandblast processing.
By sandblast, process, on metal sheet surface, produce fine concavo-convex, so the insulating properties diaphragm after this formed on metal sheet surface and electrode increase with respect to the adhesion of metal sheet surface.
And because sandblast processing is physics mode, so the situation of be subject to alligatoring agent concentration, temperature, impurity concentration, dip time with chemical mode (alligatoring) in the past, shaking the impact of speed, metallic plate metallic crystal etc. is compared, not only increase substantially the stability of surface state, but also eliminated in the chemical mode unsteadiness because of the metallic plate meltage poor resistance change caused.Therefore, the insulating properties diaphragm formed on the low resistive metal plate after sandblast processing, the adhesiveness of electrode film have been improved.
There is the condition of multiple sandblast processing, below meaned one of them example.
<sandblast condition >
Propellant: aluminium oxide 99.7%#220
Expulsion pressure: 0.3Mpa
Injecting time: 30 seconds/single face
<surface roughness >
Ra＝0.39～0.53μm
Ry＝2.98～3.16μm
Rz＝2.22～2.32μm
In addition, surface roughness is determined according to Japanese Industrial Standards (JIS).
Subsequently as shown in Fig. 1 (C); in manufacture method of the present invention; carry out along the long side direction of low resistive metal plate 10, at the upper face center position of low resistive metal plate 10, with Rack, form a bar insulation diaphragm 11a, at the lower surface central part of low resistive metal plate 10, form the step of a bar insulation diaphragm 11b with Rack.
Because insulating properties diaphragm 11a, 11b are formed on the surface of the low resistive metal plate 10 after sandblast is processed, so have, improved its adhering advantage with respect to low resistive metal plate 10.
Can utilize common insulating properties protective materials such as epoxy resin silk screen print method etc. to form the insulating properties diaphragm.
The formation width that determines described insulating properties diaphragm can determine the front electrode narrated later and the formation width of backplate, can be for the adjusting resistance value.
If increase the formation width of insulating properties diaphragm, reduce the formation width of front electrode and backplate, usually resistance value can be improved, otherwise resistance value can be reduced.
As shown in Fig. 1 (D), in manufacture method of the present invention, carry out evenly forming the step of the electrode film 12 that is wholely set front electrode 12a, backplate 12c and end electrode 12b in the both sides of described diaphragm 11a, 11b with plating subsequently.
As shown in Fig. 1 (D); owing to electroplating, forming electrode film 12a, 12c, 12b; so do not forming on insulating properties diaphragm 11a, 11b, whole surface low resistive metal plate 10 shown in Fig. 1 (C), can form electrode film with the cardinal principle same thickness.
Because electrode film 12a, 12c, 12b are formed on the low resistive metal plate 10 after sandblast is processed, so improved its adhesiveness with respect to low resistive metal plate 10.
When forming electrode film, in order to improve the adhesiveness of this electrode film, after having implemented strike plating, the electroplated electrode metal, form multilayer by electrode film usually.
In addition, by being electroplated in plating plate (panel plating) mode, can make to be equivalent to front electrode, backplate and end electrode position each layer thickness substantially evenly, thereby can improve the reliability of electrode.
For the weldability that meets electrode with reduce the function such as resistance value, the thickness of preferred electrode film is greater than the thickness of above-mentioned insulating properties diaphragm usually, or thickness is substantially identical.
While in Fig. 1 (D), forming electrode film, particularly the alloy of low resistive metal plate is used in the situation of the copper class alloys such as above-mentioned copper-manganese-Xi class alloy or iron-chromium class alloy, in order further to improve the adhesiveness of electrode film, prevent when after this being cut off etc. that the generation electrode film is peeled off etc. and cause fabrication yield to reduce, most preferably according to impactive nickel plating, copper facing, nickel plating and zinc-plated order, plated successively plate.
In the situation that strike plating adopt to be impacted copper facing or impacted gold-platedly etc., producing the probability that electrode film peels off when cutting off increases.In addition, in the situation that do not implement final zinc-platedly, while wanting to utilize the resistor obtained Reflow Soldering to be installed, solder wettability likely reduces.
In addition, in the situation that copper facing and zinc-plated between unreal plating nickel, copper facing diffusion when described installation, the reliability of electrode likely reduces.Wherein, each electroplate liquid and plating condition of using in electroplating can suitably be selected and determine.
For example impactive nickel plating can be used nickel chloride solution and hydrochloric acid, under the condition of high electric current, short time, carries out.In addition, can use the nickel plating after Watts bath (watts bath) carries out copper facing.
The present embodiment is as shown in Fig. 1 (B), (C); owing to before forming insulating properties diaphragm 11a, 11b, carrying out sandblast processing; improved insulating properties diaphragm 11a, the 11b adhering advantage with respect to low resistive metal plate 10 so have, and had and improved electrode film 12a, 12c, the 12b adhering advantage with respect to low resistive metal plate 10.Its result, in cut-out step after this, have advantages of that insulating properties diaphragm 11a, 11b and electrode film 12a, 12c, 12b are difficult to peel off.
In manufacture method of the present invention; also, by carry out the step that the low resistive metal plate of the diaphragm obtained and electrode film covering is cut off at horizontal (X-X) with specific length in Fig. 1 (D), can obtain desirable metallic plate low-resistance chip resistor.
On the other hand; Rack as the low resistive metal plate shown in Fig. 1 (A); in the situation that be prepared as the several times of the chip resistor cardinal principle long side direction length finally obtained; although do not mean in figure; but, after sandblast processing is carried out on the surface to the low resistive metal plate, at the upper surface of low resistive metal plate 10, with Rack, form many bar insulations diaphragm 11a, at the lower surface of low resistive metal plate 10, with Rack, form many bar insulations diaphragm 11b.Although do not mean in figure, between many bar insulations diaphragm 11a, 11b, low resistive metal plate 10 become to a plurality of at slit shearing.After this as shown in Fig. 1 (D), after insulating properties diaphragm 11a, 11b both sides form electrode film, low resistive metal plate 10, at transversely cutting, is become to desirable metallic plate low-resistance chip resistor.
(embodiment 2)
Metallic plate low-resistance chip resistor and manufacture method thereof referring to accompanying drawing to other embodiments of the invention describe.
Fig. 3 is the brief description figure of each step for manufacture method of the present invention is described, Fig. 3 (A) means the low resistive metal plate 10 of preparing.
Fig. 3 (B) means the long side direction along low resistive metal plate 10, at the upper face center position of low resistive metal plate 10, with Rack, forms a bar insulation diaphragm 11a, at the lower surface central part of low resistive metal plate 10, forms the state of a bar insulation diaphragm 11b with Rack.
Fig. 3 (C) means the low resistive metal plate 10 after sandblast processing is carried out in the surface except insulating properties diaphragm 11a, 11b.
Fig. 3 (D) is illustrated in the both sides of described diaphragm 11a, 11b with electroplating the state that evenly forms the electrode film that is wholely set front electrode 12a, backplate 12c and end electrode 12b.
In manufacture method of the present invention, at first, as shown in Fig. 3 (A), prepared the step of the low resistive metal plate of Rack and thickness, and Rack is chosen as the cardinal principle long side direction length of the chip resistor finally obtained usually.
In manufacture method of the present invention; then as shown in Fig. 3 (B); carry out along the long side direction of low resistive metal plate 10, at the upper face center position of low resistive metal plate 10, with Rack, form a bar insulation diaphragm 11a, at the lower surface central part of low resistive metal plate 10, form the step of a bar insulation diaphragm 11b with Rack.
In manufacture method of the present invention, as shown in Fig. 3 (C), carry out the step that sandblast processing is carried out in the surface of the low resistive metal plate 10 except insulating properties diaphragm 11a, 11b subsequently.
In manufacture method of the present invention; then as shown in Fig. 3 (D); carry out in diaphragm 11a, 11b both sides with electroplating the step that evenly forms the electrode part 12 that is wholely set front electrode 12a, backplate 12c and end electrode 12b; after this; by carrying out the step that the low resistive metal plate covered with diaphragm and electrode film is cut off at horizontal (X-X) with specific length, can obtain desirable metallic plate low-resistance chip resistor.
As described above, the present embodiment carries out the sandblast processing of Fig. 3 (C) after insulating properties diaphragm 11a, 11b at Fig. 3 (B) form, identical with aforesaid embodiment 1.
Therefore according to the manufacture method of the present embodiment, owing to after forming insulating properties diaphragm 11a, 11b, carrying out sandblast processing, so have, improved electrode film 12a, 12c, the 12b adhering advantage with respect to low resistive metal plate 10.Its result, have advantages of that electrode film 12a, 12c, 12b are difficult to peel off in cut-out step after this.
On the other hand; Rack as the low resistive metal plate 10 shown in Fig. 3 (A); in the situation that be prepared as the several times of the cardinal principle long side direction length of the chip resistor finally obtained; although do not mean in figure, at the upper surface of low resistive metal plate 10, with Rack, form many bar insulations diaphragm 11a, at the lower surface of low resistive metal plate 10, with Rack, form many bar insulations diaphragm 11b.In addition; although do not mean in figure; but, after sandblast processing is carried out on the surface of the low resistive metal plate 10 to except many bar insulations diaphragm 11a, 11b, between many bar insulations diaphragm 11a, 11b, low resistive metal plate 10 is become to a plurality of at slit shearing.After this as shown in Fig. 3 (D), after insulating properties diaphragm 11a, 11b both sides have formed electrode film, low resistive metal plate 10, at transversely cutting, is become to desirable metallic plate low-resistance chip resistor.
Industrial applicibility
Adhering metallic plate low-resistance chip resistor and the manufacture method thereof of utilizing sandblast processing to improve diaphragm and electrode film of the present invention, can be used widely industrial.
Claims (5)
1. the manufacture method of a metallic plate low-resistance chip resistor is characterized in that comprising:
Prepare the step of the low resistive metal plate of Rack and thickness;
The surface of described metallic plate is carried out to the step of sandblast processing;
Along the long side direction of described metallic plate, at the upper and lower surface central part separately of described metallic plate, form respectively the step of a bar insulation diaphragm with Rack;
Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And
The described metallic plate covered with described diaphragm and electrode film with specific length the step at transversely cutting.
2. the manufacture method of a metallic plate low-resistance chip resistor is characterized in that comprising:
Prepare the step of the low resistive metal plate of Rack and thickness;
Along the long side direction of described metallic plate, at the upper and lower surface central part separately of described metallic plate, form respectively the step of a bar insulation diaphragm with Rack;
The surface except the part that is formed with described diaphragm of described metallic plate is carried out to the step of sandblast processing;
Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And
The described metallic plate covered with described diaphragm and electrode film with specific length the step at transversely cutting.
3. the manufacture method of a metallic plate low-resistance chip resistor is characterized in that comprising:
Prepare the step of the low resistive metal plate of Rack and thickness;
The surface of described metallic plate is carried out to the step of sandblast processing;
Upper and lower surface at described metallic plate forms respectively the step of many bar insulations diaphragm with Rack;
Between described diaphragm described metallic plate the step at slit shearing;
Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And
The described metallic plate covered with described diaphragm and electrode film with specific length the step at transversely cutting.
4. the manufacture method of a metallic plate low-resistance chip resistor is characterized in that comprising:
Prepare the step of the low resistive metal plate of Rack and thickness;
Upper and lower surface at described metallic plate forms respectively the step of many bar insulations diaphragm with Rack;
The surface except the part that is formed with described diaphragm of described metallic plate is carried out to the step of sandblast processing;
Between described diaphragm described metallic plate the step at slit shearing;
Described diaphragm both sides on described metallic plate, with electroplating the step that forms the electrode film that is wholely set front electrode, backplate and end electrode; And
The described metallic plate covered with described diaphragm and electrode film with specific length the step at transversely cutting.
5. a metallic plate low-resistance chip resistor, is characterized in that, utilizes the described manufacture method manufacture of any one in claim 1 to 4 to form.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011032996A JP2012174760A (en) | 2011-02-18 | 2011-02-18 | Metal plate low resistance chip resistor and manufacturing method therefor |
| JP2011-032996 | 2011-02-18 | ||
| PCT/JP2012/051377 WO2012111392A1 (en) | 2011-02-18 | 2012-01-24 | Metal plate low-resistance chip resistor and method for manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103430245A true CN103430245A (en) | 2013-12-04 |
Family
ID=46672330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012800078452A Pending CN103430245A (en) | 2011-02-18 | 2012-01-24 | Metal plate low-resistance chip resistor and method for manufacturing same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2012174760A (en) |
| KR (1) | KR20130130809A (en) |
| CN (1) | CN103430245A (en) |
| TW (1) | TWI446372B (en) |
| WO (1) | WO2012111392A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540555A (en) * | 2019-12-16 | 2020-08-14 | 南京先正电子股份有限公司 | Method for improving resistance stability of precision metal film |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7018251B2 (en) * | 2015-05-21 | 2022-02-10 | ローム株式会社 | Chip resistor |
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| JPH05182802A (en) * | 1991-12-27 | 1993-07-23 | Tdk Corp | Resistance element |
| JP2004158601A (en) * | 2002-11-06 | 2004-06-03 | Matsushita Electric Ind Co Ltd | Electronic component for surface mounting, and method of manufacturing same |
| CN1774771A (en) * | 2003-04-16 | 2006-05-17 | 罗姆股份有限公司 | Chip resistor and method for manufacturing same |
| JP2007049071A (en) * | 2005-08-12 | 2007-02-22 | Rohm Co Ltd | Chip resistor and manufacturing method thereof |
| CN101523523A (en) * | 2006-08-10 | 2009-09-02 | 釜屋电机株式会社 | Method for manufacturing rectangular plate type chip resistor and rectangular plate type chip resistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100236054A1 (en) * | 2007-08-30 | 2010-09-23 | Kamaya Electric Co., Ltd. | Method and apparatus for manufacturing metal plate chip resistors |
| US8242878B2 (en) * | 2008-09-05 | 2012-08-14 | Vishay Dale Electronics, Inc. | Resistor and method for making same |
-
2011
- 2011-02-18 JP JP2011032996A patent/JP2012174760A/en active Pending
-
2012
- 2012-01-24 CN CN2012800078452A patent/CN103430245A/en active Pending
- 2012-01-24 WO PCT/JP2012/051377 patent/WO2012111392A1/en active Application Filing
- 2012-01-24 KR KR1020137021469A patent/KR20130130809A/en not_active Application Discontinuation
- 2012-01-31 TW TW101103092A patent/TWI446372B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05182802A (en) * | 1991-12-27 | 1993-07-23 | Tdk Corp | Resistance element |
| JP2004158601A (en) * | 2002-11-06 | 2004-06-03 | Matsushita Electric Ind Co Ltd | Electronic component for surface mounting, and method of manufacturing same |
| CN1774771A (en) * | 2003-04-16 | 2006-05-17 | 罗姆股份有限公司 | Chip resistor and method for manufacturing same |
| JP2007049071A (en) * | 2005-08-12 | 2007-02-22 | Rohm Co Ltd | Chip resistor and manufacturing method thereof |
| CN101523523A (en) * | 2006-08-10 | 2009-09-02 | 釜屋电机株式会社 | Method for manufacturing rectangular plate type chip resistor and rectangular plate type chip resistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540555A (en) * | 2019-12-16 | 2020-08-14 | 南京先正电子股份有限公司 | Method for improving resistance stability of precision metal film |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012111392A1 (en) | 2012-08-23 |
| KR20130130809A (en) | 2013-12-02 |
| TW201246237A (en) | 2012-11-16 |
| JP2012174760A (en) | 2012-09-10 |
| TWI446372B (en) | 2014-07-21 |
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