CN111223620A - Sheet type precision film exclusion and manufacturing method thereof - Google Patents
Sheet type precision film exclusion and manufacturing method thereof Download PDFInfo
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- CN111223620A CN111223620A CN202010028158.5A CN202010028158A CN111223620A CN 111223620 A CN111223620 A CN 111223620A CN 202010028158 A CN202010028158 A CN 202010028158A CN 111223620 A CN111223620 A CN 111223620A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention discloses a manufacturing method of a sheet type precision membrane exclusion, which comprises the following steps: s1, respectively printing a back electrode and a surface electrode on the front surface and the back surface of the substrate to form electrode layers after sintering; s2, preparing dry glue through a soaking process, exposing and developing to obtain a mask pattern, and removing the mask after sputtering to obtain the resistor body; the dry glue completely covers the whole exclusion substrate; s3, modifying the resistance value through laser resistance adjustment; s4, reinforcing the protective layer through printing resin protection; s5, printing a mark, printing mark slurry on the protective surface, and then curing at high temperature; s6, folding the strip, and cutting the product substrate into strips from blocks; s7, side sealing, completing the connection of the back and face electrodes by using a silver coating process to form an end face electrode; s8, folding the grains, and cutting the product into grains from strips; s9, electroplating, namely electroplating the granular product; the invention forms the film sputtering mask shielding layer through the soaking process, realizes the thinning of the chip type exclusion resistance film and improves the resistance quality.
Description
Technical Field
The invention relates to the field of electronic element manufacturing, in particular to a chip type precision membrane exclusion and a manufacturing method thereof.
Background
At the present stage, most of chip resistors are thick film resistors, and part of chip resistors adopt thin film resistors, but the thick film resistors have poor stability, and the thin film resistors have high precision and good stability and are applied to precision equipment; however, at the present stage, the requirement of the film exclusion element on a photomask is high, dry film lamination needs to be correspondingly performed according to the electrodes and the resistor remaining edges, a sputtering pattern which covers the whole surface is difficult to obtain by a common film laminating process, and the through holes in the exclusion substrate are difficult to completely cover in a film laminating mode. The existing film exclusion is characterized in that the through hole design in the exclusion substrate and the film sputtering mask shielding layer formed by the traditional printing process cannot effectively cover the inner wall of the through hole of the exclusion substrate, so that the sputtering dislocation caused by mask loss is caused
Therefore, the purpose of coating the substrate through hole is achieved by soaking the phenolic resin and utilizing the flowing characteristic of the colloid, a mask layer with high compactness is manufactured, the defect of poor coverage surface in the traditional printing process is overcome, and meanwhile, the quality of a sputtering pattern is ensured.
Disclosure of Invention
The invention provides a chip type precision film exclusion and a manufacturing method thereof, which aim to solve the technical problem that the inner wall of a through hole of an exclusion substrate cannot be effectively covered by a film pasting mode, so that a film sputtering mask shielding layer is formed by a soaking process, the whole exclusion substrate is completely covered by dry glue, and the resistance quality is improved.
In order to solve the above technical problem, an embodiment of the present invention provides a method for manufacturing a sheet-type precision membrane exclusion, including:
respectively printing a back electrode and a surface electrode on the front surface and the back surface of the substrate so as to form an electrode layer after sintering;
dry glue is made through a soaking process, a mask pattern is developed through exposure, and after sputtering, the mask and the resistive film attached to the surface of the mask are removed through a solvent to obtain a resistor body;
the resistance value is modified through laser resistance adjustment;
the protective layer is reinforced through printing resin protection;
printing a mark, namely printing mark slurry on the protective surface, and then curing at high temperature;
folding the strip, and cutting the product substrate into strips from blocks;
side sealing, namely completing the connection of back and face electrodes by using a silver coating process to form an end face electrode;
folding the grains, and cutting the product into grains from strips;
electroplating, wherein the granular product is electroplated.
As a preferred scheme, the specific steps of preparing the dry glue by a soaking process, exposing and developing a mask pattern, removing the mask and the resistive film attached to the surface of the mask pattern by a solvent after sputtering to obtain the resistor body include:
placing the electrode layer substrate into a photoresist liquid, and controlling the electrode layer substrate to move up and down during soaking so that the colloid completely covers the holes of the electrode layer substrate;
after the colloid is covered, placing the electrode layer substrate into a drying oven for drying to obtain solid dry glue;
and exposing and developing a mask pattern, and removing the mask and the resistive film attached to the surface of the mask pattern through a solvent after sputtering to obtain the resistor.
Preferably, the photoresist liquid is a phenolic resin liquid.
Preferably, the film thickness of the phenolic resin liquid is 1.0 μm to 4.5 μm; and the soaking time for placing the electrode layer substrate into the photoresist liquid is 10-15 min.
Preferably, the temperature in the drying box is 100-150 ℃; the drying time was 10 min.
Preferably, the substrate is an alumina ceramic substrate.
As a preferred scheme, the laser resistance adjustment adopts a one-knife or multi-knife cutting process to realize resistance value modification.
Preferably, the mark is cured at high temperature after being printed, and the mark needs to be cured at 150-250 ℃.
Preferably, the side seal is formed on the strip-shaped product by connecting back and face electrodes through a silver coating process to form an end face electrode.
The embodiment of the invention also provides a sheet type precision membrane exclusion product, which comprises: the ceramic substrate, a surface electrode and a back electrode printed on the front and back surfaces of the end surface of the ceramic substrate, a resistor formed by sputtering, and a protective layer covered with epoxy resin for protection.
Drawings
FIG. 1: is a flow chart of the method steps in the embodiment of the invention;
FIG. 2: the back electrode formed after printing and sintering in the embodiment of the invention is a schematic analysis diagram;
FIG. 3: the invention is a schematic analysis diagram of a surface electrode formed after printing and sintering;
FIG. 4: the invention is a schematic diagram of the resistor body which is etched after the sputtering of the soaking process in the embodiment of the invention;
FIG. 5: is a schematic illustration showing exclusion analysis after forming a printed resin protective layer in the embodiment of the invention;
FIG. 6: is a schematic illustration of exclusion analysis after being formed by electroplating in the embodiment of the invention;
FIG. 7: is a structural schematic diagram of the sheet type precision membrane exclusion in the embodiment of the invention;
FIG. 8: is a dissecting schematic diagram of the sheet type precision membrane exclusion in the embodiment of the invention;
in fig. 8, reference numerals of the drawings in the specification are as follows:
a, a back electrode end profile; b, analyzing the surface electrode end; c, a top view of the sheet type precise membrane exclusion;
a, a surface electrode; b, a resistor body; c, resin protection; d, marking resistance values; e, a back electrode; t, a ceramic substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a preferred embodiment of the present invention provides a method for manufacturing a sheet-type precision membrane exclusion, comprising:
s1, printing a back electrode and a front electrode on the front and back surfaces of the substrate respectively, so as to form electrode layers after sintering, as shown in fig. 2 and 3;
s2, after the electrode is finished, dry glue needs to be soaked to finish mask covering, and the method comprises the following steps:
①, putting the product into the photoresist (phenolic resin) liquid, the thickness of the liquid film is 1.0-4.5 μm, moving the product up and down when soaking, and making the colloid completely cover the holes of the product, the soaking time is 10-15 min.
②, after the colloid is covered, putting the product into a drying oven, and drying for 10min at 100-150 ℃ to obtain the solid dry colloid.
③, exposing and developing the mask pattern, sputtering and removing the mask layer by a release agent to expose the resistor.
S3, modifying the resistance value through laser resistance adjustment;
s4, realizing a reinforced protective layer through printing resin protection, as shown in FIG. 5;
s5, printing a mark, printing mark slurry on the protective surface, and then curing at high temperature, as shown in FIG. 6;
s6, folding the product substrate into strips along the I-slot dividing line of the substrate, as shown in fig. 6;
s7, side sealing, completing the connection of the back and face electrodes by using a silver coating process to form an end face electrode;
s8, folding the particles, and cutting the product into particles from strips along the groove cutting line II of the substrate, as shown in FIG. 6;
and S9, electroplating, namely electroplating the granular product to form an external electrode on the surface of the terminal electrode, so as to realize the welding function.
In this embodiment, the substrate is an alumina ceramic substrate.
In this embodiment, the laser resistance trimming adopts a one-knife or multi-knife cutting process to modify the resistance value.
In this embodiment, the mark is printed and then cured at a high temperature, which is 150-250 ℃.
In this embodiment, the side seal is formed on the strip-shaped product by performing back and face electrode connection by using a silver coating process to form an end face electrode.
The traditional chip thick film resistor array generally adopts a manufacturing method of a screen printing process to form a resistor layer, and the resistor product has low resistance precision, high resistance temperature coefficient and high noise, and cannot meet the high-performance application requirements provided by customers. The patent relates to a chip type precision film exclusion, which adopts a film sputtering manufacturing method to form a resistance layer, so that the product has the performance characteristics of high precision, low resistance temperature coefficient, low noise, high stability and the like. The patent also adopts a soaking manufacturing method to form a film sputtering mask shielding layer, and effectively solves the problem that the traditional mask printing mask can not effectively cover the inner wall of the through hole of the exclusion substrate.
The invention also discloses a sheet type precision film exclusion product, which comprises: the ceramic substrate, a surface electrode and a back electrode printed on the front and back surfaces of the end surface of the ceramic substrate, a resistor formed by sputtering, and a protective layer covered with epoxy resin for protection. Printing electrodes are arranged on the front and back surfaces of the end face of the ceramic substrate, electrodes on the surfaces of two ends of the resistor body in lap joint are formed after sputtering, the target resistance value is achieved after the graph of the resistor body is adjusted through laser, epoxy resin is covered for protection, resistance value marks are printed, the electrodes on the end face of two sides are connected in a silver coating mode through arranging strips, and nickel and tin are electroplated after grain folding to obtain a finished product.
The present invention will be described in detail with reference to specific examples.
Compared with the laminating type dry glue/printing mask in the common film resistor process, the laminating type dry glue/printing mask can be used for making a more complete dry glue mask layer, can completely cover the surface of the substrate, and solves the problem of resistor body leakage caused by poor coverage of the laminating type dry glue/printing mask on the inner wall of the through hole of the substrate during sputtering.
The invention has the key points that the resistance value high precision is embodied: the alloy material of the sputtering product has stable performance, and through reasonable heat treatment temperature, the surface atom adhesion strength is improved, and meanwhile, the electrical property is improved. The ideal resistance value can be obtained after the resistance adjusting parameters are properly adjusted, and the product has the characteristics of high temperature resistance and stable structure, so that a more accurate resistance value range can be obtained.
Another important point of the present invention is the low temperature coefficient of resistance: in the conventional printing-type exclusion material, the temperature coefficient of the printed resistance paste is generally larger, about 100-250 ppm/DEG C, and the TCR is larger when the size of the resistance paste is smaller, which is in inverse proportion. 4R03 itself is relatively small in size, which determines that there is a limit in temperature coefficient control at the present stage of the printing form exclusion.
The exclusion produced by sputtering mode solves the problem of TCR limitation from the source, the TCR is related to the material property, the existing thin film resistor can basically run for 100 hours under the full load at 125 ℃, and the variation value is less than +/-0.1%, the sputtering target material in the thin film resistor is formed by sputtering metal target materials such as Ni, Cr and the like, and the two metals can provide stable TCR variation range. Similar material sputtering is also used in the present invention, so the TCR characteristics of the product are the same as the resistance of the common film.
Example (b):
referring to fig. 7-8, the specification model is 4R03, the target resistance is 10K Ω, and the resistance precision is controlled: ± 0.5%, TCR: 25 ppm/deg.C; an alumina ceramic substrate was used.
The manufacturing process comprises the following steps:
the method comprises the following steps: and printing back and face electrodes in a printing mode, and sintering to form an electrode layer.
Step two: soaking dry glue:
①, putting the product into the photoresist (phenolic resin) liquid, the thickness of the liquid film is 1.0-4.5 μm, moving the product up and down when soaking, and making the colloid completely cover the holes of the product, the soaking time is 10-15 min.
②, after the colloid is covered, putting the product into a drying oven, and drying for 10min at 100-150 ℃ to obtain the solid dry colloid.
③, exposing and developing the mask pattern, sputtering and removing the mask layer by a release agent to expose the resistor.
Step three: and (3) laser resistance adjustment, namely, resistance trimming by adopting a one-knife or multi-knife cutting process.
Step four: and protecting and reinforcing the protective layer by printing resin.
Step five: and (4) printing a mark, namely printing mark slurry on the protective surface, and then curing at the temperature of 150 ℃ and 250 ℃.
Step six: and folding the strip to divide the product substrate into strips from blocks.
Step seven: and (4) side sealing, namely completing the connection of the back electrode and the surface electrode by using a silver coating process to form an end surface electrode.
Step eight: breaking the granules and cutting the product into granules from strips.
Step nine: electroplating, wherein the granular product is electroplated.
In the present invention, the insulating substrate is required to have good insulation and thermal conductivity, and is generally an alumina ceramic substrate.
In the invention, the resistance body is sputtered by adopting the NiCr alloy target material, so that the resistance body has the characteristic of low temperature coefficient.
In the invention, the mask layer is formed by a soaking process, the dry glue completely covers the whole exclusion substrate, and the resistor body is sputtered and formed in a sputtering mode.
The above-mentioned embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above-mentioned embodiments are only examples of the present invention and are not intended to limit the scope of the present invention. It should be understood that any modifications, equivalents, improvements and the like, which come within the spirit and principle of the invention, may occur to those skilled in the art and are intended to be included within the scope of the invention.
Claims (10)
1. A method for manufacturing a sheet-type precise membrane exclusion, which is characterized by comprising the following steps:
respectively printing a back electrode and a surface electrode on the front surface and the back surface of the substrate so as to form an electrode layer after sintering;
dry glue is made through a soaking process, a mask pattern is developed through exposure, and after sputtering, the mask and the resistive film attached to the surface of the mask are removed through a solvent to obtain a resistor body;
the resistance value is modified through laser resistance adjustment;
the protective layer is reinforced through printing resin protection;
printing a mark, namely printing mark slurry on the protective surface, and then curing at high temperature;
folding the strip, and cutting the product substrate into strips from blocks;
side sealing, namely completing the connection of back and face electrodes by using a silver coating process to form an end face electrode;
folding the grains, and cutting the product into grains from strips;
electroplating, wherein the granular product is electroplated.
2. The method as claimed in claim 1, wherein the step of forming the resistor body by a dry glue process by a dipping process, exposing and developing a mask pattern, and removing the mask and the resistive film attached to the surface thereof by a solvent after sputtering, comprises:
placing the electrode layer substrate into a photoresist liquid, and controlling the electrode layer substrate to move up and down during soaking so that the colloid completely covers the holes of the electrode layer substrate;
after the colloid is covered, placing the electrode layer substrate into a drying oven for drying to obtain solid dry glue;
and exposing and developing a mask pattern, and removing the mask and the resistive film attached to the surface of the mask pattern through a solvent after sputtering to obtain the resistor.
3. The method of claim 2, wherein the photoresist liquid is a phenolic resin liquid.
4. The method of claim 3, wherein the phenolic resin liquid has a film thickness of 1.0 μ ι η to 4.5 μ ι η; and the soaking time for placing the electrode layer substrate into the photoresist liquid is 10-15 min.
5. The method of claim 2, wherein the temperature in the drying oven is 100 to 150 ℃; the drying time was 10 min.
6. The method of claim 1, wherein the substrate is an alumina ceramic substrate.
7. The method of claim 1, wherein the laser trimming employs one or more knife cutting processes to achieve modifying the resistance value.
8. The method of claim 1, wherein the indicia is printed and cured at a high temperature, requiring 150 ℃ to 250 ℃.
9. The method of claim 1, wherein the edge seal is applied to the strip of product by a silver coating process to complete the back and face electrode connections to form the end face electrodes.
10. A sheet type precision membrane exclusion product, which is manufactured based on the sheet type precision membrane exclusion manufacturing method of any one of claims 1 to 9; the sheet type precision membrane exclusion product comprises: the ceramic substrate, a surface electrode and a back electrode printed on the front and back surfaces of the end surface of the ceramic substrate, a resistor formed by sputtering, and a protective layer covered with epoxy resin for protection.
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| Application Number | Priority Date | Filing Date | Title |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054273A (en) * | 2020-08-26 | 2020-12-08 | 广东风华高新科技股份有限公司 | Preparation method of chip attenuator |
| CN112185637A (en) * | 2020-09-02 | 2021-01-05 | 广东风华高新科技股份有限公司 | Manufacturing method of direct-insertion type precision network resistor and resistor |
| WO2021098888A3 (en) * | 2020-12-31 | 2021-07-15 | 深圳顺络电子股份有限公司 | High-frequency load piece based on aluminum nitride substrate and manufacturing method therefor |
| CN114141540A (en) * | 2021-12-09 | 2022-03-04 | 南通海星电子股份有限公司 | Method for manufacturing uniform corrosion hole of high-voltage aluminum foil mask for aluminum electrolytic capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112054273A (en) * | 2020-08-26 | 2020-12-08 | 广东风华高新科技股份有限公司 | Preparation method of chip attenuator |
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| CN114141540A (en) * | 2021-12-09 | 2022-03-04 | 南通海星电子股份有限公司 | Method for manufacturing uniform corrosion hole of high-voltage aluminum foil mask for aluminum electrolytic capacitor |
| CN114141540B (en) * | 2021-12-09 | 2023-12-22 | 南通海星电子股份有限公司 | Manufacturing method of high-voltage aluminum foil mask uniform corrosion hole for aluminum electrolytic capacitor |
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