TW405128B - The manufacture method of a chip type passive device (resistor bus, capacitor bus, inductance bus, filter) end face electrode - Google Patents

The manufacture method of a chip type passive device (resistor bus, capacitor bus, inductance bus, filter) end face electrode Download PDF

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Publication number
TW405128B
TW405128B TW87111284A TW87111284A TW405128B TW 405128 B TW405128 B TW 405128B TW 87111284 A TW87111284 A TW 87111284A TW 87111284 A TW87111284 A TW 87111284A TW 405128 B TW405128 B TW 405128B
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Taiwan
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electrode
face
bus
substrate
type passive
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TW87111284A
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Chinese (zh)
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Wan-Ping Wang
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Cyntec Co Ltd
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Abstract

A kind of manufacture method of a chip type passive device end face electrode, which is to complete printing toward the normal face unit device first; then, cut into stripe shape by utilizing laser cutting to proceed end face filming toward the end face of the device; next, electroplate continuously toward the end face portion through the diamond knife dicing saw and cut according to the normal and back facet electrode position, width and the spacing so that a device end face electrode is acquired; by this, it could effectively control the spacing and the size of the device to improve the quality, degree of accuracy and density of the product.

Description

經濟部中央標隼局員工省費合咋汪中货 405128 at ---------- B7 五、發明説明(/ ) 〜 -- 〈發明之範圍〉 本發明係有關一種晶片型被動元件(排阻、排容、排 感、濾波器等)端面電極之製作方法,特別是指—種利用鑽 石刀片切割機(Dicing Saw)將晶月型被動元件的端面部份 之連續電極依正背面電極所需之位置、寬度及間距切割, 以有效控制元件之間距尺寸,提昇產品品質及精度、密度 之製造方法者。 ^ ^ 〈先前技術之描述〉 1206(0.12in X 0.06in)尺寸之晶片型被動元件由於其微 小之間距(pitch)問題而使凸形電極或端面電極的形成^法 較傳統單一元件素子之晶片型被動元件或裴有金屬片接腳 之各式產品更為困難;鑑於日趨微小化、精密化的產品需 求故有小型多連之晶片型被動元件被發展出來。 目前多數製造晶片型被動元件之競爭者大部份仍以貫 孔方式形成凹形電極,此種形式在製造過程中雖然為一種 較簡易的製程方式,但伴隨了其他製程之精度及良率提昇 的困難,且在使用上由於銲錫後之檢驗不易,重新加工 (rework)之困難而衍生許多問題。 傳統晶片型被動元件製程步驟係: 1-於貫孔基板進行印刷(如第1圖所示); 2. 條狀剝離(如第2圖所示); 3. 粒狀剝離(如第3圖所示)。 說明: 一般之晶片型被動元件為貫孔或作金屬接腳形式; 國彖) A4 祕 -------—裝-- (請先閱讀背面之注意事項再填寫本頁) 訂 線 A7 B7 __405128_ 五、發明説明(&gt;) 晶片型被動元件言,貫孔印刷為用來形成端 製程方法。 要 特點:在印刷的過程中同時形成端面電極而連接正反面之 電極;f一ί程之特點在節省端面電極形成之製 ^ 無需另加特殊設舰可以形成端面 電極。 缺失:此種貫孔技術的缺失大致分為兩部份: h製造限制:由於貫孔印必需在印刷基板上預先留有 孔洞’目前市面上見到”刷基板,其孔洞大都為 0.3x0.6mm,最小可至0.2_直徑之圓孔 用 印刷正反面導_㈣機,將導騎料吸入用 需要一大於貫孔的印刷面積’以目前各輕-般之 印刷精度’以此―覆蓋貫孔的印刷面積最小需 (0.2mm + (U麵+0.lm伞〇 4咖;在—個㈣職 間距(P_的製品中除去G4mm的印刷面積 0.4mm之_ ’料將基板本身的縣(最 〇.!_)考慮進去’則以貫孔方式製作〇8_間距 (pitchR晶片型被動元件或更小之間距(p 很大的困難。 $ 2.客戶使用·由貫孔技術所形成之產品在客戶使用上 稱為凹電極產品’其在PC板上之鮮錫狀態及銲錫 狀態之檢驗皆不甚良好、容易,且當需要重新加工 時困難度高。 有鐘於習知製造方法有上述之缺失,本發明人即針對 .一 :.…-------------------…Staff of the Central Bureau of Standards, Ministry of Economic Affairs, save money, Wang Zhonghuo 405128 at ---------- B7 V. Description of Invention (/) ~-<Scope of Invention> The present invention relates to a passive chip type Method for manufacturing end electrodes of components (exclusion, capacitance, inductance, filters, etc.), especially refers to the use of a diamond blade cutting machine (Dicing Saw) to straighten the continuous electrode on the end portion of the crystal moon passive component The manufacturing method of cutting the position, width and pitch of the back electrode in order to effectively control the distance between the components and improve the product quality, accuracy and density. ^ ^ <Description of the prior art> 1206 (0.12in X 0.06in) size wafer-type passive device due to its small pitch problem, the formation of convex electrodes or end-face electrodes ^ method is more traditional than a single element element wafer Type passive components or all kinds of products with metal sheet pins are more difficult; in view of the increasingly miniaturized and precise product requirements, small and multi-chip passive components have been developed. At present, most of the competitors who manufacture wafer-type passive components still form concave electrodes in a through-hole manner. Although this form is a simpler process in the manufacturing process, it has accompanied the improvement of accuracy and yield of other processes. It is difficult to use, and it is difficult to inspect after soldering, and it is difficult to rework. The traditional wafer type passive component manufacturing process steps are: 1-printing on the through-hole substrate (as shown in Fig. 1); 2. strip peeling (as shown in Fig. 2); 3. granular peeling (as shown in Fig. 3) As shown). Note: General chip-type passive components are through-holes or metal pins; Guo Ai) A4 Secret ------------- (Please read the precautions on the back before filling this page) Thread A7 B7 __405128_ 5. Description of the invention (&gt;) Chip-type passive components, through-hole printing is used to form the end process method. Key features: During the printing process, the end-face electrode is formed at the same time to connect the front and back electrodes; the feature of f_1 is to save the system of the end-face electrode formation ^ The end-face electrode can be formed without additional special ships. Missing: The lack of this type of through-hole technology is roughly divided into two parts: h Manufacturing limitation: Due to the through-hole printing, holes must be left in the printed circuit board in advance. 'Currently seen on the market' brush substrates, most of whose holes are 0.3x0. 6mm, the smallest can reach 0.2_diameter of the circular hole for printing front and back guide _ ㈣ machine, suction guide material needs to use a printing area larger than the through hole 'with the current light-like printing accuracy' to cover the The minimum printing area of the hole needs to be 0.2mm + (U surface + 0.lm umbrella 〇4 coffee; in a product with a pitch (P_ products excluding G4mm printing area of 0.4mm _ _ material will be the county of the substrate itself) (Most 〇.! _) Taking into account the 'through-hole method' 〇8_ pitch (pitchR wafer-type passive components or smaller pitch (p is very difficult. $ 2. Customer use · formed by through-hole technology This product is called a concave electrode product in customer's use. Its fresh tin state and solder state inspection on the PC board are not very good and easy, and it is difficult when it needs to be reprocessed. There are some known manufacturing methods With the above-mentioned defects, the present inventor is directed at: one: .........---- ...

度相中 iimmWT (請先閲讀背面之注意事項再填寫本頁) -裝. 線 經齊部中夬榡隼馬員X肖費合咋fi印t Α7 Β7 405128 五、發明説明㈠) 該等缺失進行研究改進之道,而終有本發明之產生。 &lt;發明之總論&gt; 搞夕=方i發明即旨在提供一種晶片型被動元件端面電 Li』,^她之此種晶片型被動元件端面電極 孙'、棱仏一非貫孔印刷之端面電極形成法,可解 決貫孔技術在製造上的_及客戶使用上之不便。 同時由於使用非貫孔基板,基板尺寸的變異消失而可 使用大型之基板使用—製程之產品數增加及因減少材料不 確定度而增加之製程能力、良率。 至於本發明之詳細内容,應用原理,作用與功效 參照下列依附圖所作之說明即可得到完全的了解: &lt;圖式之簡單說明&gt; 附圖者: 第1圖為習見晶片型被動元件貫孔基板印刷完成平面 示意圖。 第2圖為習見晶片型被動元件條狀剝離之平面示意 第3圖為習見晶片型被動元件粒狀剝離之平 第4圖為本發明之製作流程圖。 第5圖為本發明之基板印刷完叙平面示意圖。 第6圖為本發明之條狀剝離之平面示意圖。 第7圖為本發明條狀半製品之端面連義著膜之側面 辨翻家樣K CNS ) 初公袭: 請 閲 讀 背 .面 之 注 項 I 再 f 1 I繫 頁 il 圖 經 濟 部 中 央 標 準 Λ 貝 工 消 費 合 作 社 印 装 面示意 圖 示意圖。Degree phase iimmWT (please read the precautions on the back before filling out this page) -install. Horseman X Shao Feihe in the Scriptures Department 咋 7 Α7 Β7 405128 V. Description of the Invention ㈠) The way to carry out research and improvement has led to the invention. &lt; Summary of inventions &gt; Engagement = The invention of Fang i is to provide a chip-type passive element end-face electric Li ', ^ her such chip-type passive element end-face electrode', a non-through hole printing The end electrode formation method can solve the inconvenience of through-hole technology in manufacturing and customer use. At the same time, due to the use of non-through-hole substrates, the size variation of the substrate disappears and large substrates can be used-the number of products in the process increases and the process capacity and yield increase due to the reduction of material uncertainty. As for the details of the present invention, the application principle, function and effect can be fully understood with reference to the following description made with reference to the drawings: &lt; Simple description of the drawings &gt; A schematic plan view of the printed circuit board. Fig. 2 is a plan view showing stripping of conventional wafer type passive components. Fig. 3 is a plan showing stripping of conventional wafer type passive components. Fig. 4 is a manufacturing flow chart of the present invention. FIG. 5 is a schematic plan view of the printed substrate of the present invention. FIG. 6 is a schematic plan view of strip peeling according to the present invention. Figure 7 shows the side of the strip-shaped semi-finished product of the present invention with the side of the film, K CNS) First public attack: Please read the back. Note on the front I, then f 1 I is the page of the central standard of the Ministry of Economic Affairs Λ Schematic diagram of the printed surface of Bei Gong Consumer Cooperative.

五、發明説明(l/ ) 第8圖為本發明端面連續膜切割分開工程,切割時之 平面側視立體狀態示意圊。 第9圖為本發明之條狀半製品經過鑽石切割後之側面 示意圖。 第10圖為本發明端面連續膜切割條狀半製品分開後之 平面示意圖。 第11圖為本發明粒狀剝離工程後之單一晶片型被動元 件之平面示意圖。 &lt;較佳具體實施例之詳細描述&gt; 凊參照第4圖,本發明之此種晶片型被動元件端面電 極製作方法,其步驟包括: 1. 對基板正面單元元件及背面電極完成印刷(如第5圖所 示); 2. 雷射切割(如第6圖所示); 、 3. 條狀剝離;.. 4_端面著膜(如第7圖所示); 5·端面切割(如第8、9圖所示); 6. 粒狀剝離(如第11圖所示); 7. 電鍍; 8. 檢驗。 上列之步驟茲更詳述如下(請參第5圊至第丨丨圖所 示): 本發明為利用切割之手段以達成形成端面電極之目的 者°將印刷完成之陶瓷基板經雷射切割並剝成條狀,而得 6 (請先閲饋背面之注意事項再填寫本頁} •裝 -訂: 線V. Description of the Invention (l /) Figure 8 shows the cutting process of the continuous film cutting of the end surface of the present invention. Fig. 9 is a schematic side view of the strip-shaped semi-finished product after diamond cutting according to the present invention. Fig. 10 is a schematic plan view of the strip-shaped semi-finished product of the end-face continuous film cutting strip of the present invention. Figure 11 is a schematic plan view of a single wafer-type passive component after the granular peeling process of the present invention. &lt; Detailed description of a preferred embodiment &gt; 凊 Referring to FIG. 4, the method for manufacturing an end electrode of such a wafer-type passive element of the present invention includes the following steps: 1. Complete printing of the front unit element and the back electrode of the substrate (such as Figure 5); 2. Laser cutting (as shown in Figure 6); 3. Strip stripping; .. 4_end film (as shown in Figure 7); 5. End face cutting (such as (Figures 8 and 9); 6. Granular peeling (as shown in Figure 11); 7. Plating; 8. Inspection. The above steps are described in more detail as follows (see Figures 5 to 丨 丨): The present invention is to use cutting means to achieve the purpose of forming end-face electrodes ° The printed ceramic substrate is cut by laser And strip into strips, and get 6 (Please read the notes on the back of the feed before filling in this page} • Binding-binding: thread

I 405128 a7 _____B7_ 五、發明説明(厂) (請先閲讀背&quot;之注意事項再填寫本頁) 到晶片型被動元件,此時端面部份為陶瓷基板之斷面,乃 未與正、背面電極相連接;將此條狀之半製品置入一,,门” 形冶具中加以整列,並使端面部份露出於治具之兩側,以 Sputter(濺鍍)方式在端面進行著膜!;著膜後之端面為連 續之導體,而正背面電極2是由印刷、燒結而形成,故其 尺寸、間隙皆可由設計而更改,使印刷製程能力最小可達 寬度0.1mm之線條,較之貫孔所需之最小尺寸(〇4麵)為 其1/4而已,亦即在〇.8mm間距(pitch)或更小之電極間距 (0.5mm)皆無先天之尺寸限制。 為使端面部份之連續導體如同正背面電極一樣分開, 以達各元件素子之功能,如第8圖所示,本發明利用鑽石 刀片切割機(Dicing saw),藉由鑽石刀片3對晶片之端面部 份進行切割,只要決定鑽石刀片3的厚度,即可使晶片端 面部份的連續電極4依正背面電極2所需之位置、寬度、 間距得以切割,從而得到預定尺寸之元件端面電極。 本發明有下列之功效: 1.母單位基板上之晶片型被動元件數增加: A.—般貫孔基板:由於以此法製作晶片型被動元件之基 板在成形時即需以模具沖孔,模具費高昂,且因陶究 基板之燒結收縮不易控制,一般貫孔基板之製造尺寸 為60mmX45mm,故單位之基板上最大約可排列晶片 型被動元件684顆。 / B·空白無加工基板:由於無貫孔之影響,.基板之尺寸可 放大至基板廠商製程此力所及之尺寸,以本發明之實 =__— _7__ 經濟部中央榡準局貝工消費合作社印裝 405128 Α7 Β7 五、發明説明(t) -- 施例所之基板80mmx84mm,其基板上最大可排及之 晶片型被動元件數有1173顆,為一般貫孔基板立17 倍。以相同的基板製造流程’利用本發明之製作方法 將可多獲得近一倍之晶片型被動元件。 2.基板之尺寸精度可忽略並增加製程良率: A.貫孔基板:如上述因陶瓷燒結之收縮,預先沖好之孔 洞其大小位置精度受燒結之尺寸變化而受影響,目前 之精度通常以-個列(rank)内:t1〇〇 _為其精度,而基 板薇商在燒製基板時通常將完成之基板依尺寸分成數 十個列(rank),而交貨於使用者通常至少有十數個列 (rank)的基板,因此在作基板印刷時除了製作數量之 網版套數外’由於尺寸之差異可大至lmm(基板外圍 尺寸)以上,在後續之自動化的設置上將產生困擾;最 嚴重的是由於尺寸之不準使得基板上印刷圖形的設計 受到很大的限制’使得製程之寬容度、產品性能無法 提升。甚至’無法製作更微小化之產品。 &amp;白無加工基板.使用二點決定一平面之原理作定位 在印刷上及條狀粒狀切割上無公差太大之問題,一般 之公差在0.02mm左右,使得產品之設計寬容度大增 在製作果微小化產品之技術上也無大的障礙。 以上的功能皆可因使用本發明之製造法而捨去以往之貫 孔基板,而使用空白基板所得之功效。 ^外上所述,本發明之此種晶片型被動元件端面電極之 製作方法,其先在基板正面單元元件完成印刷,再利用雷 (請先閱讀背-Φ之注意事項再填寫本頁) ·I - II -II ·- I .I 405128 a7 _____B7_ V. Description of the invention (factory) (Please read the "Notes on the back" before filling out this page) To the chip-type passive component, the end face is the cross section of the ceramic substrate, but it is not the same as the front and back The electrodes are connected; the strip-shaped semi-finished products are placed in one, and the gates are arranged in a row, and the end faces are exposed on both sides of the jig, and the sputter (sputter) method is used to coat the end faces! ; The end face after filming is a continuous conductor, and the front and back electrodes 2 are formed by printing and sintering, so its size and gap can be changed by design, so that the printing process capacity can reach a minimum width of 0.1mm lines, compared to The minimum required size of the through hole (04 face) is only 1/4, that is, there is no inherent size limitation in the 0.8 mm pitch (0.5 mm) or smaller electrode pitch (0.5 mm). The continuous conductor is separated like the front and back electrodes to achieve the function of each element. As shown in Figure 8, the present invention uses a diamond blade cutting machine (Dicing saw) to cut the end face of the wafer with the diamond blade 3. Just decide on the diamond blade 3 In this way, the continuous electrode 4 on the end face of the wafer can be cut according to the required position, width and pitch of the front and back electrodes 2, so as to obtain a component end electrode of a predetermined size. The invention has the following effects: 1. Mother unit substrate The number of wafer-type passive components has increased: A.—General through-hole substrate: As the substrate of wafer-type passive components produced by this method needs to be punched with a mold during molding, the mold cost is high, and the sintering of the ceramic substrate shrinks It is not easy to control. Generally, the manufacturing size of the through-hole substrate is 60mmX45mm, so the maximum number of wafer-type passive components can be arranged on the substrate of the unit is 684. / B · Blank non-processed substrate: Due to the influence of no through-hole, the size of the substrate can be enlarged. Dimensions to the substrate manufacturer's manufacturing process are in accordance with the present invention = __— _7__ Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Shellfish Consumer Cooperative Co., Ltd. 405128 Α7 Β7 V. Description of the Invention (t)-The substrate of the Example Institute , The maximum number of wafer-type passive components on the substrate can be 1,173, which is 17 times that of a general through-hole substrate. The same substrate manufacturing process is used to use the production method of the present invention Nearly double the number of wafer-type passive components. 2. The dimensional accuracy of the substrate can be ignored and the process yield can be increased: A. Through-hole substrate: As mentioned above, due to the shrinkage of ceramic sintering, the size and position accuracy of pre-punched holes Affected by the sintering size change, the current accuracy is usually within a rank: t100__, and the substrate is usually divided into dozens of finished substrates by size when firing the substrate. Rank, and the delivery to the user usually has at least ten ranks of the substrate, so when printing for the substrate, in addition to the number of screen plates, the size can be as large as 1mm (the periphery of the substrate) Size) above, it will cause trouble in the subsequent automatic setting; the most serious is that the design of printed graphics on the substrate is greatly restricted due to the inaccurate size ', which makes the process tolerance and product performance unable to be improved. It ’s not even possible to make smaller products. &amp; White non-processed substrate. Using the principle of two points to determine a plane for positioning on printing and strip grain cutting has no too much tolerance. The general tolerance is about 0.02mm, which greatly increases the design tolerance of the product. There are no major obstacles in the technology of making miniaturized products. The above functions can be obtained by using the manufacturing method of the present invention to eliminate the conventional through-hole substrate and use a blank substrate. ^ Explained above, the method for manufacturing the end-face electrode of such a wafer-type passive element according to the present invention is to first print the unit element on the front side of the substrate, and then use the thunder (please read the precautions on the back-Φ before filling this page). I-II -II ·-I.

__405128 五、發明説明(&quot;]) A7 B7__405128 V. & Explanation of invention A7 B7

射切割的方式作條狀剝離,對元件的端面進行端面著膜, 再透過鑽石刀片切割機(Dicing Saw)對端面部份就連續電 極依正背面電極位置,寬度以及間距切割,從而獲得元件 端面電極的製作方法,確實可以使用非貫孔基板,使單位 基板之產量增加,並可有效控制元件之間距及尺寸,以提 昇產品品質及精度;其可束服習見製造方法之缺失,而其 未見諸公開使用’合專利法之規定’爰依法申請專利,並 請賜准專利是檮。The strip cutting method is used for stripping, and the end surface of the element is filmed, and then the end surface is cut by a diamond blade cutting machine (Dicing Saw). The electrode manufacturing method can indeed use non-through-hole substrates to increase the yield of unit substrates, and effectively control the distance and size of components to improve product quality and accuracy; it can overcome the lack of manufacturing methods, and its See the public use of the 'Provisions of the Patent Law' to apply for a patent in accordance with the law, and please grant the quasi-patent.

Claims (1)

405128 申請專利範圍 1驟種晶片型被動請端面電極之製作方法,包括下列步 對基板正面單元元件及背面電極完成印刷; 雷射切割; 條狀制離; 端面著膜; 係過㈣對端面部份就連續電極依正背 寬度以及間距切割,《製得元件端面電極; 電極; 粒狀剝離; 電鍍; 檢驗; ^度:有效控制元件之間距及尺寸,以提昇產品品質 2==:=,動元件_ 形成係以薄臈製程製作者板正面早疋元件及背面電極之 3,i:r利刪1項所述之晶片型被動元件端面電極 法’其中,對基板正面單元元件係 成而背面電極係以印刷方式完成者。專1 ^-- (請先聞讀背面之注意事項再填寫本頁) 訂 ---------------- H ί { * 蠢. '1'405128 Patent application scope 1 The fabrication method of a wafer-type passive end-face electrode includes the following steps to complete printing on the front unit element and back-side electrode of the substrate; laser cutting; strip separation; end-face filming; The continuous electrode is cut according to the width of the front and back, and the element end electrode is obtained; electrode; granular peeling; electroplating; inspection; ^ degree: effectively control the distance and size between the components to improve product quality 2 ==: =, The moving element _ formation is based on the thin front-end manufacturing process of the front plate element and the back electrode 3, i: r of the wafer type passive element end electrode method described in item 1, where the front surface unit element of the substrate is formed. The back electrode is completed by printing. Special 1 ^-(Please read the notes on the back before filling in this page) Order ---------------- H ί {* Stupid. '1'
TW87111284A 1998-07-13 1998-07-13 The manufacture method of a chip type passive device (resistor bus, capacitor bus, inductance bus, filter) end face electrode TW405128B (en)

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Application Number Priority Date Filing Date Title
TW87111284A TW405128B (en) 1998-07-13 1998-07-13 The manufacture method of a chip type passive device (resistor bus, capacitor bus, inductance bus, filter) end face electrode

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TW87111284A TW405128B (en) 1998-07-13 1998-07-13 The manufacture method of a chip type passive device (resistor bus, capacitor bus, inductance bus, filter) end face electrode

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385677B (en) * 2008-12-19 2013-02-11 Yoho New Technologies Co Ltd Method for processing electrodes of compact passive elements
CN111223620A (en) * 2020-01-10 2020-06-02 广东风华高新科技股份有限公司 Sheet type precision film exclusion and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385677B (en) * 2008-12-19 2013-02-11 Yoho New Technologies Co Ltd Method for processing electrodes of compact passive elements
CN111223620A (en) * 2020-01-10 2020-06-02 广东风华高新科技股份有限公司 Sheet type precision film exclusion and manufacturing method thereof

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