CN206401111U - A kind of sulfuration resistant thick film Chip-R - Google Patents

A kind of sulfuration resistant thick film Chip-R Download PDF

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Publication number
CN206401111U
CN206401111U CN201621455041.0U CN201621455041U CN206401111U CN 206401111 U CN206401111 U CN 206401111U CN 201621455041 U CN201621455041 U CN 201621455041U CN 206401111 U CN206401111 U CN 206401111U
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sulfuration resistant
resistance
thick film
layer
film chip
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黄正信
陈庆良
丁良富
姚元钦
魏效振
顾明德
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LIZ ELECTRONICS (KUNSHAN) CO Ltd
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LIZ ELECTRONICS (KUNSHAN) CO Ltd
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Abstract

The utility model discloses a kind of sulfuration resistant thick film Chip-R, belong to Chip-R technical field, including aluminium oxide ceramics body, the both sides difference printed back electrode of the aluminium oxide ceramics body lower surface, front electrode is printed respectively in the both sides of upper surface, and the aluminium oxide ceramics body printed thereon resistance resistance body between two front electrodes, the upper surface of the resistance resistance body is provided with the first protective layer, radium tangent line is provided with the resistance resistance body, the front electrode upper surface is provided with sulfuration resistant layer, sulfuration resistant layer is used to protect front electrode, so as to reach the sulfuration resistant performance of resistance, the upper surface of first protective layer is provided with the second protective layer, the upper surface of second protective layer is provided with character code layer.The utility model can make product possess excellent sulfuration resistant performance, and more wider application is brought to this sulfuration resistant Chip-R.

Description

A kind of sulfuration resistant thick film Chip-R
Technical field
The utility model is related to a kind of Chip-R, more particularly, to a kind of sulfuration resistant thick film Chip-R.
Background technology
Current Chip-R component is the electrode using silver as resistance two ends, after printing silver electrode, in order to protect silver Electrode, in addition it is also necessary to layer protective layer is electroplated on the outside of it, as a rule this protective layer be nickel, tin layers so that formed one it is complete Whole resistor assembly.But, in the environment of with the presence of sulphur, for example place such as hot spring, mountain area, due to a large amount of presence of sulphur, nickel, Tin electrodeposited coating can not play a protective role well for silver layer so that silver contacts generation silver sulfide with sulphur, occurs resistance interruption The problems such as, the performance of product has been had a strong impact on, the reduction of its Stability and veracity is caused, or in the manufacturing process of resistance Produce as position skew of the diaphragm of the causes such as failure etc., internal electrode can be caused to expose, silver-colored sulfurous gas in atmosphere In the presence of vulcanize, occasionally result in electrode open circuit.Especially contain in the air for producing the Hot Spring Area of volcanic gas etc. The high area of sulphur gas concentration, easily occurs as the problems such as the electric pole short circuit caused by the vulcanization of silver.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of sulfuration resistant thick film Chip-R, possesses product excellent Different sulfuration resistant performance, its sulfuration resistant testing standard is:Hydrogen sulfide 1000ppm, 25 DEG C of temperature, humidity 90%RH, the time 720 is small When, while resistance electrical characteristic is intact, resistance is without vulcanization and open circuit phenomenon.And relatively low cost of manufacture, this sulfuration resistant can be given Chip-R brings more and wider application.
In order to solve the above-mentioned technical problem, the technical scheme that the utility model is used is:
A kind of sulfuration resistant thick film Chip-R, it is characterised in that:Including aluminium oxide ceramics body 01, the aluminium oxide ceramics The both sides difference printed back electrode 02 of the lower surface of body 01, front electrode 03 is printed in the both sides of upper surface respectively, and at two The printed thereon resistance resistance body 04 of aluminium oxide ceramics body 01 between front electrode 03, the upper surface of the resistance resistance body 04 is set Have and radium tangent line 06 is provided with the first protective layer 05, the resistance resistance body 04, the upper surface of front electrode 03 is provided with sulfur resistive Change layer 07, sulfuration resistant layer 07 is used to protect front electrode 03.The upper surface of first protective layer 05 is provided with the second protective layer 08, the upper surface of second protective layer 08 is provided with character code layer 09, and the two ends side of the aluminium oxide ceramics body 01 is set Side electrode 10 is equipped with, side electrode 10 causes front electrode 03 to be turned on backplate 02, and the backplate 02, front Nickel dam 11 is coated with electrode 03 and side electrode 10, the outer surface of the nickel dam 11 is coated with tin layers 12.
Described sulfuration resistant layer 07 is connected with the two ends of resistance resistance body, and sulfuration resistant layer is located at front electrode upper surface.
The front electrode 03 is silver-colored palladium electrode.The sulfuration resistant layer 08 is the nichrome of vacuum splashing and plating.The nickel dam 12 thickness is 4 ~ 15 μm.The thickness of the tin layers 13 is 5 ~ 15 μm.The printing area of the resistance resistance body is:0402 specification 0.20mm2, 0603 specification 0.47mm2, 0805 specification 1.26mm2, 1206 specification 2.20mm2
A kind of foregoing sulfuration resistant thick film Chip-R, the sulfuration resistant ability of the resistance is strong, and sulfuration resistant testing standard is: Hydrogen sulfide 1000ppm, 25 DEG C of temperature, humidity 90%RH, 720 hours time, while resistance electrical characteristic is intact, resistance is without vulcanization And open circuit phenomenon.
Relative to prior art, the beneficial effects of the utility model are:By setting sulfuration resistant layer, can there is product Excellent sulfuration resistant performance, and relatively low cost of manufacture, wider application is brought to this sulfuration resistant Chip-R.
Brief description of the drawings
Fig. 1 is a kind of longitudinal section of sulfuration resistant thick film Chip-R of the present utility model.
Fig. 2 is the longitudinal section of process 1 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 3 is the longitudinal section of process 2 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 4 is the longitudinal section of process 3 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 5 is the longitudinal section of process 4 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 6 is the longitudinal section of process 5 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 7 is the longitudinal section of process 6 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 8 is the longitudinal section of process 7 for representing to manufacture sulfuration resistant thick film Chip-R.
Fig. 9 is the longitudinal section of process 8 for representing to manufacture sulfuration resistant thick film Chip-R.
Figure 10 is the longitudinal section of process 9 for representing to manufacture sulfuration resistant thick film Chip-R.
Figure 11 is the longitudinal section of process 10 for representing to manufacture sulfuration resistant thick film Chip-R.
Figure 12 is the longitudinal section of process 11 for representing to manufacture sulfuration resistant thick film Chip-R.
With reference to accompanying drawing, make the following instructions:
01- ceramic body 02- backplate 03- front electrode 04- resistance resistance bodies
05- the first protective layer 06- radium tangent line 07- sulfuration resistant layer protective layers of 08- second
09- character codes layer 10- side electrode 10- nickel dam 12- tin layers.
Embodiment
Below in conjunction with Figure of description, the utility model is further described.
As shown in figure 1, a kind of sulfuration resistant thick film Chip-R, including aluminium oxide ceramics body 01, the aluminium oxide ceramics The both sides difference printed back electrode 02 of the lower surface of body 01, front electrode 03 is printed in the both sides of upper surface respectively, and at two The printed thereon resistance resistance body 04 of aluminium oxide ceramics body 01 between front electrode 03, the upper surface of the resistance resistance body 04 is set Have and radium tangent line 06 is provided with the first protective layer 05, the resistance resistance body 04, the upper surface of front electrode 03 is provided with sulfur resistive Change layer 07, sulfuration resistant layer 07 is used to protect front electrode 03, so that the sulfuration resistant performance of resistance is reached, first protective layer 05 Upper surface be provided with the second protective layer 08, the upper surface of second protective layer 08 is provided with character code layer 09, the aluminum oxide The two ends side of ceramic body 01 is provided with side electrode 10, and side electrode 10 causes front electrode 03 and backplate(02 Conducting, and nickel dam 11, the outer surface plating of the nickel dam 11 are coated with the backplate 02, front electrode 03 and side electrode 10 There are tin layers 12.
Described sulfuration resistant layer 07 is connected with the two ends of resistance resistance body, and sulfuration resistant layer is located at front electrode upper surface.
Sulfuration resistant thick film Chip-R provided by the utility model is realized when making by following process:
Process 1:First, as shown in Fig. 2 being printed in the lower surface of aluminium oxide ceramics body 01 by silk screen thick film screen printing mode Silver paste is covered in brushing, and is sintered behind with defined temperature, and in the lower surface formation one of aluminium oxide ceramics body 01 Layer backplate 02;
Process 2:Then, as shown in figure 3, again in the upper surface of above-mentioned aluminium oxide ceramics body 01, being printed by silk screen thick film Brush mode prints the silver-colored palladium slurry of coating, is sintered behind with defined temperature, and in the upper table of aluminium oxide ceramics body 01 Face forms one layer of front electrode 03;
Process 3:Then, as shown in figure 4, printing coating one between front electrode 03 by silk screen thick film screen printing mode again Layer resistance body slurry, and be sintered behind with defined temperature, form resistance resistance body 04, the printing area of resistance resistance body 04 For:0402 specification 0.20mm2, 0603 specification 0.47mm2, 0805 specification 1.26mm2, 1206 specification 2.20mm2
Process 4:Then, as shown in figure 5, coating one in the printed thereon of resistance resistance body 04 by silk screen thick film screen printing mode again Layer glass paste, and be sintered behind with defined temperature, form the first protective layer 05 as protective resistance resistance body 04;
Process 5:Then, as shown in fig. 6, resistance resistance body 04 is modified to visitor by the mode cut again by using laser Resistance and precision needed for the application end of family, form radium tangent line 06;
Process 6:Then, as shown in fig. 7, in 04 printed thereon of resistance resistance body, one layer of resin mask layer capable of washing, then lead to Cross vacuum splashing and plating mode and one layer of nickel-chrome alloy layer is set in the upper surface of product, then again by ultrasonic wave cleaning way by resin Mask layer, resin the mask layer part overlapping with nickel-chrome alloy layer are all washed off, only retain the nickel chromium triangle of the upper surface of front electrode 03 Alloy-layer, forms the sulfuration resistant layer 07 of protection front electrode 03, so as to preferably reach the purpose of sulfuration resistant;
Process 7:Then, as shown in figure 8, coating one layer in the printed thereon of the first protective layer 05 by screen printing mode again Resin slurry, and be sintered behind with defined temperature, form the second protective layer 08 as protective resistance resistance body 04;
Process 8:Then, as shown in figure 9, the middle position above above-mentioned second protective layer 08 again, passes through silk screen thick film Mode of printing printing one layer of character code slurry of coating, and be sintered behind with defined temperature, form big as mark resistance Small character code layer 09;
Process 9:Then true nickel plating chromium alloy material mode, shape, as shown in Figure 10, then in the two ends side of product are used The side electrode 10 turned on into front electrode 03 and backplate 02;
Process 10:Then, as shown in figure 11, then on the backplate 02 in product, front electrode 03 and side electrode 10 Layer of Ni (nickel dam) is electroplated in face, and Ni thickness degree is:4 ~ 15 μm, form nickel dam 11;
Process 11:Finally, as shown in figure 12, one layer of Sn (tin layers), Sn thickness degree then on the Ni (nickel dam) of product are electroplated For:5 ~ 15 μm, form tin layers 12.
In summary, the utility model provides a kind of sulfuration resistant Chip-R, passes through advanced production technology, reasonable selection With high performance sulfuration resistant material, it can make product that there is excellent sulfuration resistant performance, and relatively low cost of manufacture, this can be given One sulfuration resistant Chip-R brings more and wider application.
Above said content, elaborates general principle of the present utility model, principal character and advantage, not new to this practicality Type makees any formal limitation, although the utility model is not limited to this practicality with as above preferred embodiment It is new.It should be understood by those skilled in the art that, the utility model is not restricted to the described embodiments, new not departing from this practicality On the premise of type spirit and scope, the utility model also has various changes and modifications, and these changes and improvements both fall within requirement The utility model scope of protection, as long as being the content without departing from technical solutions of the utility model, according to skill of the present utility model Art essence still falls within the utility model technical side to any simple modification made for any of the above embodiments, equivalent variations and modification The scope of case.It is boundary that scope, which is claimed, by appended claims and its equivalent in the utility model.

Claims (8)

1. a kind of sulfuration resistant thick film Chip-R, it is characterised in that:Including aluminium oxide ceramics body(01), the aluminium oxide ceramics Body(01)The both sides difference printed back electrode of lower surface(02), front electrode is printed in the both sides of upper surface respectively(03), and In two front electrodes(03)Between aluminium oxide ceramics body(01)Printed thereon resistance resistance body(04), the resistance resistance body (04)Upper surface be provided with the first protective layer(05), the resistance resistance body(04)On be provided with radium tangent line(06), the front Electrode(03)Upper surface is provided with sulfuration resistant layer(07), sulfuration resistant layer(07)For protecting front electrode(03).
2. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that:First protective layer(05) Upper surface be provided with the second protective layer(08), second protective layer(08)Upper surface be provided with character code layer(09), it is described Aluminium oxide ceramics body(01)Two ends side be provided with side electrode(10), side electrode(10)So that front electrode(03) With backplate(02)Conducting, and the backplate(02), front electrode(03)And side electrode(10)On be coated with nickel dam (11), the nickel dam(11)Outer surface be coated with tin layers(12).
3. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that:Described sulfuration resistant layer(07) It is connected with the two ends of resistance resistance body, sulfuration resistant layer is located at front electrode upper surface.
4. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that:The front electrode(03)For Silver-colored palladium electrode.
5. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that:The sulfuration resistant layer(07)For The nichrome of vacuum splashing and plating.
6. a kind of sulfuration resistant thick film Chip-R according to claim 2, it is characterised in that:The nickel dam(11)Thickness For 4 ~ 15 μm.
7. a kind of sulfuration resistant thick film Chip-R according to claim 2, it is characterised in that:The tin layers(12)Thickness For 5 ~ 15 μm.
8. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that:The printing of the resistance resistance body Area is:0402 specification 0.20mm2, 0603 specification 0.47mm2, 0805 specification 1.26mm2, 1206 specification 2.20mm2
CN201621455041.0U 2016-12-28 2016-12-28 A kind of sulfuration resistant thick film Chip-R Active CN206401111U (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113972045A (en) * 2021-10-26 2022-01-25 江西昶龙科技有限公司 Method for preparing anti-vulcanization thick film chip resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113972045A (en) * 2021-10-26 2022-01-25 江西昶龙科技有限公司 Method for preparing anti-vulcanization thick film chip resistor
CN113972045B (en) * 2021-10-26 2023-11-03 江西昶龙科技有限公司 Method for preparing anti-vulcanization thick film wafer resistor

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