CN209249221U - A kind of sulfuration resistant thick film Chip-R - Google Patents
A kind of sulfuration resistant thick film Chip-R Download PDFInfo
- Publication number
- CN209249221U CN209249221U CN201920044742.2U CN201920044742U CN209249221U CN 209249221 U CN209249221 U CN 209249221U CN 201920044742 U CN201920044742 U CN 201920044742U CN 209249221 U CN209249221 U CN 209249221U
- Authority
- CN
- China
- Prior art keywords
- layer
- chip
- protective layer
- sulfuration resistant
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005987 sulfurization reaction Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 53
- 239000011241 protective layer Substances 0.000 claims description 47
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 5
- 239000005864 Sulphur Substances 0.000 abstract description 5
- 238000004073 vulcanization Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- Thermistors And Varistors (AREA)
Abstract
The utility model belongs to Chip-R technical field, more particularly to a kind of sulfuration resistant thick film Chip-R, including Chip-R ontology and character code layer, the front of the Chip-R ontology is coated with character code layer, and Chip-R ontology includes ceramic substrate, the top and bottom of the ceramic substrate are printed with front electrode and rear electrode respectively, and resistance base body is printed in the middle part of ceramic substrate top, the outside of the front electrode is equipped with sulfuration resistant layer, is equipped with glass layer at the top of the resistance base body.The sulfuration resistant thick film Chip-R; by the way that sulfuration resistant layer is arranged; it can be during Chip-R use; play the role of protection to the front electrode and rear electrode of Chip-R body interior; avoid the problem that open circuit occurs in the environment of with the presence of sulphur because of vulcanization for Chip-R; enable circuit is smooth to run, it is ensured that the performance of Chip-R, to improve its Stability and veracity.
Description
Technical field
The utility model belongs to Chip-R technical field, and in particular to a kind of sulfuration resistant thick film Chip-R.
Background technique
Chip-R is also known as electronics passive device, and the usually electrode using silver as resistance both ends is still having existing for sulphur
Under environment, since the protective layer of current silver electrode surface cannot play a protective role well, it is easy so that silver contacts life with sulphur
At silver sulfide, so that the problem of resistance interruption occurs, has seriously affected the performance of Chip-R, its accuracy and stabilization are reduced
Property.
Utility model content
The purpose of this utility model is to provide a kind of sulfuration resistant thick film Chip-Rs, to solve to mention in above-mentioned background technique
Out the problem of.
To achieve the above object, the utility model provides the following technical solutions: a kind of sulfuration resistant thick film Chip-R, including
Chip-R ontology and character code layer, the front of the Chip-R ontology is coated with character code layer, and Chip-R ontology includes pottery
Porcelain substrate, the top and bottom of the ceramic substrate are printed with front electrode and rear electrode respectively, and ceramic substrate top
Middle part is printed with resistance base body, and the outside of the front electrode is equipped with sulfuration resistant layer, is equipped at the top of the resistance base body
Glass layer, resin layer is equipped at the top of the glass layer, and matcoveredn, institute is arranged in the external of the ceramic substrate
It states and is coated with character code layer at the top of protective layer, the side of the front electrode is in contact with the side of resistance base body, and front electricity
Pole is equal with the quantity of rear electrode, and the outside of the front electrode and rear electrode is equipped with sulfuration resistant layer.
Preferably, the material of the sulfuration resistant layer is ferroaluminium, and the inside phase of the outside of sulfuration resistant layer and protective layer
Contact.
Preferably, the resin layer is located at the inside of protective layer, and the thickness value of resin layer is greater than the thickness of glass layer
Angle value.
Preferably, the protective layer includes the first protective layer and the second protective layer, first protective layer and sulfuration resistant layer
It is in contact with the side of ceramic substrate, and the outside of the first protective layer is equipped with the second protective layer, the material of second protective layer
Matter is tin metal.
Preferably, first protective layer is identical as the thickness value of the second protective layer, and the material of the first protective layer is nickel
Metal.
Compared with prior art, the utility model has the beneficial effects that
1, the sulfuration resistant thick film Chip-R can be right during Chip-R use by the way that sulfuration resistant layer is arranged
The front electrode and rear electrode of Chip-R body interior play the role of protection, avoid Chip-R with the presence of sulphur
In the environment of occur because of vulcanization open circuit problem, enable circuit is smooth to run, it is ensured that the performance of Chip-R, thus
Improve its Stability and veracity.
2, the sulfuration resistant thick film Chip-R can be used by setting glass layer and resin layer in Chip-R
During, play the role of protection to resistance base body, avoids resistance base body and be damaged because of the influence of external factor
The problem of, to improve the service life of resistance base body, it is ensured that Chip-R normally can smoothly be run.
Detailed description of the invention
Fig. 1 is the front schematic view of the utility model structure;
Fig. 2 is the side sectional view of the utility model structure.
In figure: 1, Chip-R ontology;11, ceramic substrate;12, front electrode;13, rear electrode;14, resistance base body;
15, sulfuration resistant layer;16, glass layer;17, resin layer;18, protective layer;A, the first protective layer;B, the second protective layer;2, word
Code layer.
Specific embodiment
The utility model is further described below with reference to embodiment.
The following examples illustrate the utility model, but cannot be used to limit the protection scope of the utility model.Implement
Condition in example can be adjusted according to actual conditions are further, to the utility model under the concept thereof of the utility model
Method simple modifications belong to the requires of the utility model protection range.
The utility model provides a kind of technical solution referring to FIG. 1-2: a kind of sulfuration resistant thick film Chip-R, including crystalline substance
Sheet resistance ontology 1 and character code layer 2, the front of Chip-R ontology 1 is coated with character code layer 2, and Chip-R ontology 1 includes ceramics
Substrate 11, the top and bottom of ceramic substrate 11 are printed with front electrode 12 and rear electrode 13 respectively, and ceramic substrate 11 pushes up
Resistance base body 14 is printed in the middle part of end, the outside of front electrode 12 is equipped with sulfuration resistant layer 15, the top paving of resistance base body 14
Equipped with glass layer 16, the top of glass layer 16 is equipped with resin layer 17, and the outside of ceramic substrate 11 is provided with protection
Layer 18, the top of protective layer 18 is coated with character code layer 2.
Wherein, the side of front electrode 12 is in contact with the side of resistance base body 14, and front electrode 12 and rear electrode
13 quantity is equal, and the outside of front electrode 12 and rear electrode 13 is equipped with sulfuration resistant layer 15, it is ensured that front electrode 12
With resistance base body 14 can rigid contact to ensure that Chip-R can be normally powered on avoid Chip-R
There is the phenomenon that poor contact.
Wherein, the material of sulfuration resistant layer 15 is ferroaluminium, and the inside phase of the outside of sulfuration resistant layer 15 and protective layer 18
Contact can play the role of protection to front electrode 12 and rear electrode 13, keep away during Chip-R use
Exempted from front electrode 12 and rear electrode 13 causes Chip-R that breaking problem occurs because of vulcanization.
Wherein, resin layer 17 is located at the inside of protective layer 18, and the thickness value of resin layer 17 is greater than glass layer 16
Thickness value can play the role of protection to resistance base body 14, avoid resistance base body during Chip-R use
14 the problem of being damaged because of oxidation.
Wherein, protective layer 18 includes the first protective layer a and the second protective layer b, the first protective layer a and sulfuration resistant layer 15 and pottery
The side of porcelain substrate 11 is in contact, and the outside of the first protective layer a is equipped with the second protective layer b, and the material of the second protective layer b is
Tin metal can protect the outside of Chip-R during Chip-R use.
Wherein, the first protective layer a is identical as the thickness value of the second protective layer b, and the material of the first protective layer a is nickel gold
Belong to, the external of Chip-R can be protected twice by the setting of the first protective layer a and the second protective layer b, from
And improve the protecting effect of the protective layer 18.
The working principle and process for using of the utility model: it is printed respectively just in the top and bottom of ceramic substrate 11 first
Face electrode 12 and rear electrode 13, then print sulfuration resistant layer 15 respectively in the outside of front electrode 12 and rear electrode 13, can be with
Play the role of protection to the front electrode 12 and rear electrode 13 of Chip-R body interior, avoids Chip-R and exist
With the presence of the problem that open circuit occurs in the environment of sulphur because of vulcanization, enable circuit is smooth to run, it is ensured that Chip-R
Performance, so that its Stability and veracity is improved, then in the middle part printed resistor matrix 14 on 11 top of ceramic substrate, and
The top of resistance base body 14 successively coated glass fibrous layer 16 and resin layer 17, to play the work of protection to resistance base body 14
With the problem of resistance base body 14 is damaged because of the influence of external factor being avoided, to improve making for resistance base body 14
With the service life, it is ensured that Chip-R normally can smoothly be run, can finally in the external coat protective layer 18 of ceramic substrate 11
To be protected to the outside of Chip-R during Chip-R use.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of sulfuration resistant thick film Chip-R, it is characterised in that: including Chip-R ontology (1) and character code layer (2), the crystalline substance
The front of sheet resistance ontology (1) is coated with character code layer (2), and Chip-R ontology (1) includes ceramic substrate (11), the ceramics
The top and bottom of substrate (11) are printed with front electrode (12) and rear electrode (13) respectively, and ceramic substrate (11) top
Middle part is printed with resistance base body (14), and the outside of the front electrode (12) is equipped with sulfuration resistant layer (15), the resistance base body
(14) it is equipped at the top of glass layer (16), is equipped with resin layer (17) at the top of the glass layer (16), it is described
Matcoveredn (18) are arranged in the external of ceramic substrate (11), are coated with character code layer (2) at the top of the protective layer (18);
The side of the front electrode (12) is in contact with the side of resistance base body (14), and front electrode (12) and rear electrode
(13) quantity is equal, and the outside of the front electrode (12) and rear electrode (13) is equipped with sulfuration resistant layer (15).
2. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that: the sulfuration resistant layer (15)
Material is ferroaluminium, and the interior thereof of the outside of sulfuration resistant layer (15) and protective layer (18) touches.
3. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that: the resin layer (17) is located at
The inside of protective layer (18), and the thickness value of resin layer (17) is greater than the thickness value of glass layer (16).
4. a kind of sulfuration resistant thick film Chip-R according to claim 1, it is characterised in that: the protective layer (18) includes
First protective layer (a) and the second protective layer (b), first protective layer (a) and sulfuration resistant layer (15) and ceramic substrate (11)
Side is in contact, and the outside of the first protective layer (a) is equipped with the second protective layer (b), and the material of second protective layer (b) is
Tin metal.
5. a kind of sulfuration resistant thick film Chip-R according to claim 4, it is characterised in that: first protective layer (a)
It is identical as the thickness value of the second protective layer (b), and the material of the first protective layer (a) is nickel metal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920044742.2U CN209249221U (en) | 2019-01-11 | 2019-01-11 | A kind of sulfuration resistant thick film Chip-R |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920044742.2U CN209249221U (en) | 2019-01-11 | 2019-01-11 | A kind of sulfuration resistant thick film Chip-R |
Publications (1)
Publication Number | Publication Date |
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CN209249221U true CN209249221U (en) | 2019-08-13 |
Family
ID=67536182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201920044742.2U Expired - Fee Related CN209249221U (en) | 2019-01-11 | 2019-01-11 | A kind of sulfuration resistant thick film Chip-R |
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Country | Link |
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CN (1) | CN209249221U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110660543A (en) * | 2019-10-14 | 2020-01-07 | 安徽翔胜科技有限公司 | Resistance of anti sulfidation corrosion |
-
2019
- 2019-01-11 CN CN201920044742.2U patent/CN209249221U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110660543A (en) * | 2019-10-14 | 2020-01-07 | 安徽翔胜科技有限公司 | Resistance of anti sulfidation corrosion |
CN110660543B (en) * | 2019-10-14 | 2021-09-24 | 安徽翔胜科技有限公司 | Resistance of anti sulfidation corrosion |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190813 |