CN116844802B - Manufacturing method of car gauge anti-sulfuration film high-precision resistor and resistor - Google Patents
Manufacturing method of car gauge anti-sulfuration film high-precision resistor and resistor Download PDFInfo
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- CN116844802B CN116844802B CN202310785439.9A CN202310785439A CN116844802B CN 116844802 B CN116844802 B CN 116844802B CN 202310785439 A CN202310785439 A CN 202310785439A CN 116844802 B CN116844802 B CN 116844802B
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- resistor
- protective layer
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- resistance
- cutting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000005987 sulfurization reaction Methods 0.000 title claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims abstract description 62
- 239000010410 layer Substances 0.000 claims abstract description 59
- 238000005520 cutting process Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000007639 printing Methods 0.000 claims abstract description 14
- 238000004073 vulcanization Methods 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000012937 correction Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000001723 curing Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000012216 screening Methods 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 claims 1
- 238000005486 sulfidation Methods 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/245—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by mechanical means, e.g. sand blasting, cutting, ultrasonic treatment
Abstract
The invention relates to a manufacturing method of a car gauge anti-sulfuration film high-precision resistor and the resistor, wherein an AL 2O3 ceramic substrate is adopted as a carrier, and a front electrode and a back electrode are printed; sputtering the resistance layer and the AL 2O3 protective layer by a magnetron sputtering process; carrying out laser correction, wherein the cutting line is lifted from the edge close to the resistance layer, and the lifting position is positioned in the range of the G2 protective layer; cleaning the surface of the resistor layer, forming a G2 protective layer above the resistor layer, and drying and curing the G2 protective layer; printing on the G2 protective layer, and drying and curing. The invention breaks through the technical barriers to form a set, and accords with the high-temperature high-humidity application condition of 85 ℃/85%RH, and the resistor with high power and sulfuration resistance. The high power characteristic is realized through the uniform and reasonable distribution of the cutting lines; the super-strong vulcanization resistance characteristic is realized by designing the resistor structure; high power and high stability are realized through cutting lines and protective layer adjustment.
Description
Technical Field
The invention relates to the manufacture of resistors, in particular to the manufacture of car gauge anti-vulcanization film high-precision resistors.
Background
The information technology industry is a strategic, basic and pilot industry for the urgent safety and development of the relation nations, and is also a competition place for the full-force layout with high importance in the main nations of the world. The new energy automobile mainly promotes electronic components such as a vehicle-standard sensor, a capacitor, a resistor and the like to be applied.
The existing resistor cannot simultaneously have three-phase indexes of high temperature resistance, high humidity resistance, high power resistance and sulfuration resistance. The vehicle gauge resistor has a severe working environment and is particularly important to performance requirements. For this reason, there is a need for a resistor that is capable of meeting the requirements of high temperature and humidity resistance, high power, and sulfuration resistance.
Disclosure of Invention
In order to solve the problem that at present, no resistor with three-phase indexes of high temperature resistance, high humidity resistance, high power resistance and sulfuration resistance exists. The invention provides a manufacturing method of a vehicle-gauge anti-vulcanization thin film high-precision resistor and the resistor.
The invention adopts the technical scheme that: a manufacturing method of a car gauge anti-vulcanization film high-precision resistor comprises the following steps:
a. Adopting an AL 2O3 ceramic substrate as a carrier, printing a front electrode and a back electrode through a screen printing process, and drying and curing;
b. Covering the front surface of the carrier by using glass powder slurry through screen printing, and exposing the resistor layer area;
c. Sputtering the resistance layer through a magnetron sputtering process;
d. Solidifying the resistance layer;
e. removing the glass powder slurry;
f. An AL 2O3 protective layer with a thickness of 300nm to 500nm by magnetron sputtering;
g. carrying out primary laser correction, wherein the cutting line is lifted from the edge close to the resistance layer and the lifting position is positioned in the G2 protective layer range of the step i; the cutter spacing between cutting lines is between 30UM and 57UM, and the cutter number is between 57 and 20 cutters according to the small-to-large spacing;
h. performing laser correction for the second time, and performing resistance value finishing on the basis of the laser correction for the first time;
i. Cleaning the surface of the resistor layer: vacuum plasma cleaning, and then infrared baking; immediately performing the next process, printing the resin slurry on the resistor layer through screen printing to form a G2 protective layer, and drying and curing; printing the character mark on the G2 protective layer, and drying and curing;
j. and folding the resistor and performing magnetron sputtering on the end face of the resistor to form a metal conducting layer, so that the front electrode and the back electrode are conducted.
K. And (5) folding the grains.
As one preferable method for manufacturing the high-precision resistor by using the car gauge vulcanizing-resistant film, the G2 protective layer is covered and wrapped with the AL 2O3 protective layer.
As one of the preferable methods for manufacturing the high-precision resistor of the car gauge vulcanizing-resistant film, a third protection layer is covered above the front electrode and parallel to the G2 protection layer, and the third protection layer adopts conductive paste.
As one preferable method for manufacturing the high-precision resistor of the car gauge vulcanizing-resistant film, the G2 protective layer is formed by covering two layers and the second G2 protective layer is covered with the first G2 protective layer
The utility model provides a car rule anti-sulfuration film high accuracy resistor, including the resistance carrier of AL 2O3 ceramic substrate, the positive electrode top in resistance carrier both ends is equipped with the third protective layer, the resistance carrier openly is equipped with the resistive layer, the resistive layer cutting has the equidistance cutting mark of 20 to 57 sword, the cutting mark includes by the first direction cutting mark that resistance one side opposite side extends and remains partial resistance material, and by the second direction cutting mark that resistance other side one side extends and remain partial resistance material constitute, first direction cutting mark and second direction cutting mark interval set up, be equipped with G2 protective layer and character mark on the resistive layer. The cutting mark tool setting is positioned in the substrate and close to the side face of the resistor, and the G2 protective layer covers the cutting mark. An AL 2O3 protective layer is arranged between the G2 protective layer and the resistance layer, and the thickness of the AL 2O3 protective layer is 300-500 nm.
The invention has the beneficial effects that: breaks through the technical barriers to form a set, and accords with the high-temperature high-humidity application condition of double 85-85 ℃/85%RH, and the resistor with high power and sulfuration resistance. The high power characteristic is realized through the uniform and reasonable distribution of the cutting lines; the super-strong vulcanization resistance characteristic is realized by designing the resistor structure; high power and high stability are realized through cutting lines and protective layer adjustment.
Drawings
FIG. 1 is a schematic diagram of laser cutting according to the present invention.
Fig. 2 is a schematic diagram of a resistor structure according to the present invention.
FIG. 3 is a chart of product testing
Wherein: 1. a resistive carrier; 2. a resistive layer; 3. a first direction cutting mark, 4, a second direction cutting mark; 5. a G2 protective layer; 6. marking characters; 7. a tool setting position; 8. an AL 2O3 protective layer; 9. a third protective layer; 10. a front electrode; 11. a back electrode; 12. a side electrode; a 13 nickel layer; 14. and a tin layer. The number in the test chart is the test result of the design product, the rest is the test result of other test products, NG indicates no passing, and NG1Pcs indicates 1 piece of test fails.
Detailed Description
The invention will be further described with reference to the accompanying drawings. It should be noted that the following examples are only for illustrating the technical scheme of the present disclosure, and are not limiting; the technology of the present disclosure has been described in detail with reference to examples, and it should be understood by those of ordinary skill in the art that: the technical scheme described in the above embodiments can be modified, especially for the process step sequence, or some or all technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present disclosure.
A manufacturing method of a car gauge anti-vulcanization film high-precision resistor comprises the following steps: adopting an AL 2O3 ceramic substrate as a carrier, printing a front electrode and a back electrode through a screen printing process, and drying and curing; covering the front surface of the carrier by using glass powder slurry through screen printing, and exposing the resistor layer area; sputtering the resistance layer through a magnetron sputtering process; removing the glass powder slurry after the resistor layer is solidified; forming an AL 2O3 protective layer with the thickness of 300nm to 500nm by magnetron sputtering; carrying out primary laser correction, wherein the cutting line is lifted from the edge close to the resistance layer, and the lifting position is positioned in the range of the G2 protective layer; the cutter spacing between cutting lines is between 30UM and 57UM, and the cutter number is between 57 and 20 cutters according to the small-to-large spacing; and then carrying out laser correction for the second time, and carrying out resistance value finishing on the basis of the laser correction for the first time. Then cleaning the surface of the resistor layer, including cleaning by vacuum plasma, and then baking by infrared to ensure that the surface is dry and the next printing process is not influenced; immediately printing an alumina protective layer after cleaning, then printing the alumina protective layer above the resistor layer, drying, printing resin slurry above the resistor layer to form a G2 protective layer, and drying and curing; and finally, printing the character mark on the G2 protective layer, and drying and curing.
Carrying out strip folding, grain folding and end electrode setting, carrying out strip folding on the resistor, and carrying out end face magnetron sputtering on a metal conducting layer to conduct the front electrode and the back electrode; and then carrying out grain folding and electroplating, and finally screening and packaging. And a third protection layer is covered above the front electrode and parallel to the G2 protection layer, the third protection layer partially covers the G2 protection layer, and the third protection layer is made of conductive paste.
The high-precision resistor comprises a resistor carrier 1 of an AL 2O3 ceramic substrate, wherein front electrodes 10 are arranged at the upper ends of two sides of the resistor carrier 1, back electrodes 11 are arranged on the back surfaces of the resistor carrier, a third protective layer 9 is arranged above the front electrodes 10 at two ends of the resistor carrier 1, and the third protective layer 9 partially covers a G2 protective layer 5 and is arranged parallel to the G2 protective layer 5; the front of the resistor carrier 1 is provided with a resistor layer 2, the resistor layer 2 is cut with equidistant cutting marks of 20 to 57 cutters, the cutting marks comprise first-direction cutting marks extending from one side to the other side of the resistor and retaining part of resistor materials, the second-direction cutting marks extending from the other side to one side of the resistor and retaining part of resistor materials are formed, the first-direction cutting marks and the second-direction cutting marks are arranged at intervals, and the resistor layer 2 is provided with a G2 protective layer 5 and a character mark 6. The cutting mark tool setting position 7 is positioned in the substrate and close to the side face of the resistor, and the G2 protective layer 5 covers the cutting mark. An AL 2O3 protective layer 8 is arranged between the G2 protective layer 5 and the resistor layer, and the thickness of the AL 2O3 protective layer 8 is 300-500 nm. Finally, the side electrode 12 is sputtered with metal, the nickel layer 13 is electroplated, and the tin layer 14 is electroplated.
The highest change of the resistance value of the thermal shock 100cycles test of 50 resistors is 0.07 percent, and the lowest change of the resistance value is-0.03 percent.
The highest change of the upper limit of the resistance value in the vulcanization test-100H is 0.02%, and the lowest change of the lower limit of the resistance value is-0.04%.
The highest change of the upper limit of the resistance value in the vulcanization test-200H is 0.01%, and the lowest change of the lower limit of the resistance value is-0.04%.
The highest change of the upper limit of the resistance value of the test in the vulcanization test-300H is 0.04%, and the lowest change of the resistance value is-0.04%.
The highest change of the upper limit of the resistance value in the vulcanization test-400H is 0.06%, and the lowest change of the lower limit of the resistance value is-0.03%.
The results of the thermal shock test and the vulcanization test are all in accordance with the standard, and the resistance variation is lower than 1%.
In the above embodiments, technical features are described together in the same embodiments for convenience of description, and those skilled in the art should understand that conventional evolution is within the scope of the present invention according to the present description.
Claims (7)
1. The manufacturing method of the car gauge vulcanizing-resistant film high-precision resistor is characterized by comprising the following steps of:
a. Adopting an AL 2O3 ceramic substrate as a carrier, printing a front electrode and a back electrode through a screen printing process, and drying and curing;
b. covering the front surface of the carrier by using glass powder slurry through screen printing, and exposing the resistor layer area;
c. Sputtering the resistance layer through a magnetron sputtering process;
d. sputtering an AL 2O3 protective layer by a magnetron;
e. removing the glass powder slurry;
f. Solidifying the resistance layer;
g. carrying out first laser correction, and cutting the cutting line from the edge close to the resistance layer; the cutter spacing between the cutting lines is between 30UM and 57UM, the cutter number is between 57 and 20 cutters according to the small-to-large spacing, and the cutting lines are equidistantly arranged;
h. performing laser correction for the second time, and performing resistance value finishing on the basis of the laser correction for the first time;
i. cleaning the surface of the resistor layer;
j. Printing resin slurry on the upper side of the resistor layer through screen printing to form a G2 protective layer, wherein the G2 protective layer wraps the knife-lifting position; the G2 protective layer is covered with two layers, the second layer G2 protective layer covers the first layer G2 protective layer, the G2 protective layer covers and wraps the AL 2O3 protective layer, and the G2 protective layer does not contact the edge of the carrier and is dried and solidified;
k. Printing the character mark on the G2 protective layer, and drying and curing;
Carrying out strip folding on the resistor and carrying out magnetron sputtering on the end face of the resistor to form a metal conducting layer, so that the front electrode and the back electrode are conducted;
and m, folding, electroplating, screening and packaging.
2. The method for manufacturing the gauge anti-vulcanization film high-precision resistor according to claim 1, characterized in that: and (d) sputtering an AL 2O3 waterproof protective layer with the thickness of 300nm to 500nm in the step (d).
3. The method for manufacturing the gauge anti-vulcanization film high-precision resistor according to claim 1, characterized in that: cleaning the surface of the resistor layer in the step i: including vacuum plasma cleaning followed by infrared baking.
4. A method for manufacturing a gauge anti-sulfidation thin film high precision resistor as claimed in claim 3, wherein: immediately after the end of step i, the G2 protective layer printing of step j is performed.
5. A gauge anti-sulfuration film high precision resistor produced by the method for manufacturing a gauge anti-sulfuration film high precision resistor according to any one of claims 1 to 4, characterized in that: the resistor carrier comprises an AL 2O3 ceramic substrate, a third protective layer is arranged above electrodes on the front surfaces of two ends of the resistor carrier, a resistor layer is arranged on the front surface of the resistor carrier, 20-57-knife equidistant cutting marks are cut on the resistor layer, the equidistant cutting marks are uniformly distributed between the electrodes, each cutting mark comprises a first direction cutting mark extending from one side to the other side of the resistor and reserving part of resistor material, a second direction cutting mark extending from the other side to one side of the resistor and reserving part of resistor material, the first direction cutting mark and the second direction cutting mark are arranged at intervals, a G2 protective layer is arranged on the resistor layer, an AL 2O3 protective layer is arranged between the G2 protective layer and the resistor layer, the G2 protective layer is two layers, the second layer G2 protective layer covers the first layer G2 protective layer, and covers and wraps the AL 2O3 protective layer, and character marks.
6. The gauge anti-sulfur film high precision resistor of claim 5, wherein: the cutting mark tool setting is positioned in the substrate and close to the side face of the resistor, and the G2 protective layer covers the cutting mark.
7. The gauge anti-sulfur thin film high precision resistor of claim 5, wherein the AL 2O3 protective layer has a thickness between 300-500 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310785439.9A CN116844802B (en) | 2023-06-29 | 2023-06-29 | Manufacturing method of car gauge anti-sulfuration film high-precision resistor and resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310785439.9A CN116844802B (en) | 2023-06-29 | 2023-06-29 | Manufacturing method of car gauge anti-sulfuration film high-precision resistor and resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116844802A CN116844802A (en) | 2023-10-03 |
| CN116844802B true CN116844802B (en) | 2024-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310785439.9A Active CN116844802B (en) | 2023-06-29 | 2023-06-29 | Manufacturing method of car gauge anti-sulfuration film high-precision resistor and resistor |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201643904A (en) * | 2015-06-09 | 2016-12-16 | Univ Nat Cheng Kung | Method for manufacturing automobile anti-sulfurated chip resistor |
| CN110648810A (en) * | 2019-08-27 | 2020-01-03 | 昆山厚声电子工业有限公司 | Manufacturing method of turning gauge resistor and turning gauge resistor |
| CN210200434U (en) * | 2019-08-20 | 2020-03-27 | 丽智电子(昆山)有限公司 | Thick film chip resistor of printing type vulcanization-resistant structure |
| CN112802644A (en) * | 2021-01-14 | 2021-05-14 | 广东风华高新科技股份有限公司 | Anti-vulcanization bridging resistor and preparation method thereof |
| CN112820489A (en) * | 2021-02-22 | 2021-05-18 | 昆山厚声电子工业有限公司 | Improved manufacturing process for improving waterproof performance of chip film resistor |
-
2023
- 2023-06-29 CN CN202310785439.9A patent/CN116844802B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201643904A (en) * | 2015-06-09 | 2016-12-16 | Univ Nat Cheng Kung | Method for manufacturing automobile anti-sulfurated chip resistor |
| CN210200434U (en) * | 2019-08-20 | 2020-03-27 | 丽智电子(昆山)有限公司 | Thick film chip resistor of printing type vulcanization-resistant structure |
| CN110648810A (en) * | 2019-08-27 | 2020-01-03 | 昆山厚声电子工业有限公司 | Manufacturing method of turning gauge resistor and turning gauge resistor |
| CN112802644A (en) * | 2021-01-14 | 2021-05-14 | 广东风华高新科技股份有限公司 | Anti-vulcanization bridging resistor and preparation method thereof |
| CN112820489A (en) * | 2021-02-22 | 2021-05-18 | 昆山厚声电子工业有限公司 | Improved manufacturing process for improving waterproof performance of chip film resistor |
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| Publication number | Publication date |
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| CN116844802A (en) | 2023-10-03 |
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