TW201643904A - Method for manufacturing automobile anti-sulfurated chip resistor - Google Patents

Abstract

A method for manufacturing an automobile anti-sulfurated chip resistor uses a low-cost aluminum terminal electrode to replace the existing high-cost silver terminal electrode. When the aluminum terminal electrode is applied to a chip resistor with higher resistance, the chip resistor is only required to increase current without changing its component structure. When a porous aluminum terminal electrode is applied to a chip resistor with lower resistance, a current conduction path can be changed through a new structure having a protective layer and a resistor layer in different sizes, such that an original path of conducting a resistor layer through a printing front side electrode is changed to a new path of conducting the resistor layer through a lateral side electrode. Thereby, this invention uses the porous aluminum terminal electrode to replace the original silver terminal electrode. Not only the terminal electrode material cost of the chip resistor can be reduced, but also the sulfurated problem of the chip resistor can be solved, so as to apply the chip resistor to the field of automobile electronics for increasing anti-sulfurated capability of the chip resistor.

Description

Method for manufacturing anti-vulcanized wafer resistor for vehicle

The invention relates to a method for manufacturing a vulcanization resistant chip resistor for a vehicle, in particular to a method for improving the vulcanization resistance of a chip resistor and greatly reducing the material cost of a chip resistor terminal electrode.

The resistance value of the chip resistor is mainly determined by the material and geometry of the resistor layer, and then connected to the printed circuit board (PCB) through electroplating nickel and tin after being turned on through the front metal terminal electrode. Basically, the terminal electrode of the chip resistor can be divided into three parts, namely a front end electrode, a side end electrode and a back end electrode, wherein the side end electrode and the back end electrode are only used for the post process electroplating of nickel and tin seed layers. In addition to the use of the front-end electrode for the post-process electroplating nickel and tin seed layer, it is also necessary to be responsible for the connection of the resistance layer conduction path, that is, the connection of the resistance layer and the electroplated nickel tin and soldering to the PCB board. For example, US Patent No. 6,153,256, and the Republic of China No. I423271 and No. 350071; of course, there is also a technique of using a silver electrode on the back side to connect a resistive layer, such as the Patent No. I294129 of the Republic of China, the principle and the above-mentioned front end electrode The connection resistance layer is the same. In order to form an ohmic contact with the resistive layer, the conductivity of the front end electrode must be much lower than the resistive layer resistivity to form an ohmic contact, otherwise the parasitic resistance will affect the final resistance value of the resistor.

In order to meet the function and material cost of the chip resistor terminal electrode, the current electrode material of the wafer resistor is mainly silver conductor. However, the chip resistor electrode silver metal has a serious disadvantage, which is easy to react with sulfur in the application environment. Silver sulfide, especially in the environment of high temperature, high humidity and high sulfur concentration, such as automotive electronics, is particularly intense and extremely severe, and its wafer resistance vulcanization phenomenon is shown in Fig. 6. The formation of silver sulfide will affect the electrical characteristics and reliability of the chip resistor.

At present, the main anti-vulcanization wafer resistors are made by adding a high content (more than 5 mol%) of palladium to a silver-palladium alloy to reduce the reaction reaction with sulfur to form silver sulfide. For example, US Patent No. 5,966,067, China Patent No. I429609 and I395232 of the Republic of China. However, as a result, the cost of the terminal electrode material will increase significantly, and as the sulfurization environment becomes more severe, there is a certain risk of forming silver sulfide. Therefore, the user-like users cannot meet the needs of the user in actual use.

The main object of the present invention is to overcome the above problems encountered in the prior art and to provide a porous aluminum terminal electrode instead of the original silver terminal electrode, in addition to greatly reducing the material cost of the wafer resistor terminal electrode, and completely overcoming the original wafer. A method for manufacturing a vulcanization resistant chip resistor for a vehicle that can be effectively applied to automotive electronics to improve the resistance of the wafer resistor to vulcanization.

A secondary object of the present invention is to provide a new wafer resistor terminal electrode material and a new terminal electrode structure, which replaces the current high unit price silver terminal electrode with a low cost aluminum terminal electrode, and the aluminum terminal electrode is applied to a higher resistance value wafer. Resistance, component structure is unchanged, only need to increase the current; when the porous aluminum terminal electrode is applied to the lower resistance value of the chip resistor, the current conduction path can be changed by the new structure by the size of the protective layer and the resistance layer, from the original through printing The front end electrode conduction resistance layer path is changed to a new path of the side end electrode conduction resistance layer.

For the purpose of the above, the present invention relates to a method for manufacturing a vulcanization resistant wafer resistor for a vehicle, comprising: (A) printing and sintering of a terminal electrode: firstly, a back surface end of a substrate is formed to form a two-phase interval without being connected to each other. Electrode is further printed on the front surface of the substrate to form a front end electrode which is separated from each other by two phases, and then the substrate is sent to a sintering furnace for high temperature sintering operation at 600 to 900 ° C to make the back end electrode and the front end electrode The substrate can be sintered; wherein the front end electrode is a low solid content porous aluminum electrode; (B) the resistive layer printing and sintering: a resistor is printed between the two phase spaced front end electrodes on the substrate a layer, the two ends of the resistive layer are extended to the front end electrodes, such that the two ends of the resistive layer are overlapped on the end portions of the front end electrode spacing faces, and then the substrate is sent Performing a high-temperature sintering operation at 600-900 ° C in a sintering furnace to enable the resistive layer to be sintered with the substrate; (C) printing and sintering of the undercoat layer: printing on the sintered resistive layer to form an inner layer a layer, and the size of the inner coating layer is smaller than the resistance layer without contacting the front end electrodes, exposing both ends of the resistance layer, and then feeding the substrate into the sintering furnace for 450-700° C high-temperature sintering operation, so that the inner coating layer can be sintered with the electric resistance layer; (D) laser cutting: the substrate is sent to a laser cutting device, and the resistive layer is cut by laser light on the inner protective layer Working, cutting a desired shape of the adjusting groove on the resistive layer to trim the resistance value of the resistive layer; (E) printing and sintering the overcoat layer: reprinting on the surface of the inner coating layer to form an outer coating layer, And the outer coating layer has the same size as the inner coating layer, is smaller than the resistance layer and does not contact the front end electrodes, exposes both ends of the resistance layer, and then sends the substrate into the sintering furnace. Sintering at 150-250 ° C, so that the outer coating layer can be sintered with the inner coating layer, and the inner and outer coating layers form a protective layer; (F) word layer printing: on the protective layer Printed with identification code representing the resistance of the chip; (G) fold The sheet-shaped substrate is sent to a rolling device, and the substrate is split into strips by a roll dividing method; (H) the end electrode side guide printing: a conductive material is printed on both sides of the substrate folded into a strip shape to form a conductive material. The two side end electrodes are disposed above the exposed end portions of the resistance layer, and the side end electrodes cover the front end electrodes and the back end electrodes, and then the strip substrate which completes the end electrode side printing is sent to the sintering Sintering at 150-250 ° C in a furnace, so that the side-end electrode after the side-guide printing can be sintered with the front-end electrode and the back-end electrode, so that the front-end electrode of the same side of the substrate The back end electrodes are connected to each other to form a mutual connection, and the side end electrodes are in contact with the front end electrodes, and the resistance layer is connected through a front end electrode made of porous aluminum; (I) Folding: completing the side end The strip-shaped substrate on which the electrode is sintered is again divided by a rolling device, and the strip-shaped substrate is folded, so that the connected wafer resistor is divided into a plurality of independent and has two front end electrodes, two back end electrodes, and two sides. a surface electrode, a resistance layer, and a granular body including a protective layer of the undercoat layer and the overcoat layer; and (J) electroplating: feeding the wafer resistance formed into a granularity to the plating bath for plating operation on the wafer The side electrode of the resistive conductive material is plated with a plating layer to obtain a vulcanization resistant chip resistor for the vehicle.

In the above embodiment of the invention, the material of the substrate is an alumina ceramic substrate.

In the above embodiment of the invention, the protective layer has a size smaller than the resistive layer by at least 1 micrometer (μm).

In the above embodiment of the present invention, the two side end electrodes are selected from the group consisting of copper, nickel, tin or a combination thereof.

In the above embodiment of the invention, the material of the inner coating is glass.

In the above embodiment of the invention, the material of the outer coating layer is an epoxy resin.

In the above embodiment of the invention, the front end electrode system can further be a high solid content aluminum electrode suitable for high resistance wafer resistance.

11‧‧‧Substrate

12‧‧‧Back end electrode

13‧‧‧ front side electrode

131‧‧‧End

14, 14a‧‧‧ resistance layer

141‧‧‧End

15, 15a‧‧‧ protective layer

151‧‧‧Inner coating

152‧‧‧Overcoat

16‧‧‧ Side electrode

17‧‧‧Electroplating

S101～s110‧‧‧step

Fig. 1 is a schematic view showing the production process of the present invention.

Fig. 2 is a schematic cross-sectional view showing a vulcanization resistant chip resistor for a vehicle according to a first embodiment of the present invention.

Fig. 3 is a cross-sectional view showing a vulcanization resistant chip resistor for a vehicle according to a second embodiment of the present invention.

Fig. 4 is a photograph showing the printing and sintering of a wafer resistance porous aluminum end electrode of different resistance values of the present invention.

Fig. 5 is a photograph of the finished wafer resistance porous aluminum terminal electrode of the present invention.

Figure 6 is a photograph of a conventional wafer resistance vulcanization phenomenon.

Referring to FIG. 1 to FIG. 5, which are schematic diagrams of the manufacturing process of the present invention, a cross-sectional view of a vulcanization resistant chip resistor for a vehicle according to a first embodiment of the present invention, and a vehicle for use in a second embodiment of the present invention. A schematic diagram of a cross-section of a vulcanization resistant wafer resistor, a photo resistive porous aluminum end electrode printing and sintering photograph of different resistance values of the present invention, and a photograph of a wafer resistance porous aluminum end electrode finished product of the present invention. As shown in the figure: The present invention is a method for manufacturing a vulcanization resistant wafer resistor for a vehicle, which uses an alumina ceramic substrate in combination with a thick film printing process, sequentially through end electrode printing and sintering, resistive layer printing and sintering, and inner coating. Printing and sintering, laser cutting, overcoat printing and sintering, word layer printing, folding, end electrode side guiding printing, folding, and electroplating steps complete the automotive anti-vulcanization chip resistor. As shown in the first and third figures, the process of the anti-vulcanization chip resistor for a vehicle according to the present invention is mainly implemented by the following steps:

In the terminal electrode printing and sintering step s101, first, the back end electrode 12 which is separated from each other and which is not connected to each other is formed at a suitable position on the back surface of the substrate 11, and then printed on the front surface of the substrate 11 to form a two-phase interval without being connected to each other. a terminal electrode 13; the substrate 11 is then sent to a sintering furnace for performing a high-temperature sintering operation at 600 to 900 ° C, so that the back end electrode 12 and the front end electrode 13 can be sintered with the substrate 11; wherein the front end The electrode 13 is a low solid content porous aluminum electrode.

a resistive layer printing and sintering step s102, a resistive layer 14 is formed on the substrate 11 between the two-phase spaced front end electrodes 13, and the two end portions 141 of the resistive layer 14 extend to the front end electrodes 13 so that The two end portions 141 of the resistive layer 14 are overlapped on the end portions 131 of the front surface of the front end electrodes 13; the substrate 11 is then sent to a sintering furnace for high temperature sintering at 600 to 900 ° C. The resistance layer 14 can be sintered with the substrate 11.

The inner coating printing and sintering step s103 is printed on the sintered resistive layer 14 to form an inner coating layer 151, and the inner coating layer 151 is smaller in size than the resistive layer 14 without contacting the front end electrode 13 The two ends 141 of the resistive layer 14 are exposed; the substrate 11 is then sent to a sintering furnace for high-temperature sintering at 450-700 ° C, so that the inner coating 151 can be sintered with the resistive layer 14. The inner coating layer 151 is an insulator composed mainly of glass.

In the laser cutting step s104, the substrate 11 is sent to a laser cutting device, and the resistive layer 14 is cut on the inner protective layer 151 by laser light, and an appropriate shape is cut out at the appropriate place of the resistive layer 14 ("I" The adjustment groove of the shape of "L" or "one" is used to trim the resistance value of the resistance layer 14.

The outer coating printing and sintering step s105 is further printed on the surface of the inner coating layer 151 to form an outer coating layer 152, and the outer coating layer 152 has the same size as the inner coating layer 151, and is smaller than the resistance layer 14 at least The micron (μm) or more does not contact the front end electrodes 13 to expose the both end portions 141 of the resistance layer 14; the substrate 11 is then sent to a sintering furnace for sintering at 150 to 250 ° C. The outer coating layer 152 can be sintered with the inner coating layer 151, and the inner and outer coating layers 151, 152 form a protective layer 15; wherein the outer coating layer 152 is composed mainly of epoxy resin. Insulation material.

The character layer printing step s106 is printed on the protective layer 15 with an associated identification code representing the resistance of the wafer, such as a model number, a resistance value, and the like.

In the folding step s107, the sheet-like substrate 11 is sent to a rolling device, and the substrate 11 is split into strips by a roll division method.

In the terminal electrode side printing step s108, the conductive material is printed on both sides of the strip-shaped substrate 11 to form two side end electrodes 16 above the exposed end portions 141 of the resistive layer 14, and the side end electrodes 16 are covered. The front end electrode 13 and the back end electrode 12; and then the strip substrate 11 on which the end electrode side guide printing is completed is sent to a sintering furnace for sintering at 150 to 250 ° C, and the side surface of the side guide is printed. The front electrode 16 and the front end electrode 12 are fused to the front end electrode 13 and the rear end electrode 12 of the same side of the substrate 11 to be electrically connected to each other. The electrode 16 is in contact with the front end electrode 13 and is connected to the resistive layer 14 through a front end electrode 13 made of porous aluminum; wherein the side end electrodes 16 are made of copper, nickel, tin or a combination thereof. Selected metal electrodes.

In the granulation step s109, the strip substrate 11 on which the side end electrode 16 is sintered is completed, and the strip substrate 11 is again divided by the rolling device, and the strip substrate 11 is folded, so that the connected wafer resistors are divided into a plurality of independent and have two back end electrodes 12 And a front end electrode 13, a resistive layer 14, two side end electrodes 16, and a granular body including a protective layer 15 of the inner coating layer 151 and the outer coating layer 152.

In the electroplating step s110, the wafer resistance formed into a granular shape is sent to the plating bath for electroplating, and a plating layer 17 is plated on the outside of the side end electrode 16 of the wafer resistor conductive material to obtain a vulcanization resistant chip resistor for the vehicle. As such, a new method of manufacturing a vulcanization resistant wafer resistor for a vehicle is constructed by the above disclosed process.

In the present invention, another resistance layer and another protective layer may be formed on the back surface of the substrate in order to achieve different requirements of the wafer resistor structure.

In order to solve the problem of silver vulcanization of the resistor terminal electrode of the wafer, the present invention replaces the silver electrode with an aluminum electrode, and the aluminum does not react with sulfur, and has anti-vulcanization function. Therefore, the present invention proposes to replace the metal aluminum terminal electrode formed by chemical or physical means. The original metal silver terminal electrode is applied to the chip resistor, so that the vulcanization problem of the original chip resistor silver terminal electrode can be solved, especially the chip resistance of the automotive electronic application. In view of the fact that aluminum conductivity is not like silver height, the present invention proposes the wafer resistance aluminum terminal electrode structure shown in FIG. 2 and the third embodiment according to the current wafer resistance silver terminal electrode structure for high resistance wafer resistance and low resistance wafer resistance, respectively. The wafer resistance porous aluminum end electrode structure shown in the figure. The second picture is for the high-resistance chip resistance terminal electrode (resistance 1K Ω or more), using a high conductivity resistance paste, with a high solid content of more than 85%, the front end electrode 13 is replaced by the aluminum electrode with the original silver electrode However, the protective layer 15a and the resistive layer 14a have the same size in the original structure. The high solid content aluminum electrode naturally forms a layer of aluminum oxide on the surface thereof, and a current of 0.0001 to 100 amps (A) is applied at a fixed voltage, and the high resistance resistive layer can be directly led to form a passage through the surface alumina; For the low-resistance chip resistor terminal electrode (resistance less than 1K Ω), it contains two ways, the first is in the protective layer opening, allowing the plating metal (such as copper, nickel, tin or a combination thereof) to directly connect out, the first In the second embodiment, as shown in Fig. 3 of the present invention, aluminum is made into a low solid content and becomes porous aluminum. When electroplated metal (such as copper, nickel, tin or a combination thereof), it can be filled in to connect the resistance layer. Moreover, in addition to replacing the silver electrode with the front end electrode 13 with a porous aluminum electrode, the protective layer 15 is shortened so that the end portions 141 of the resistive layer 14 are exposed to facilitate the post-process side end electrode 16 to be directly plated on the low-resistance resistive layer 14. The electroplated metal can be connected to the resistive layer 14 through a porous aluminum electrode, and the low-resistance resistive layer 14 can be directly exported as a plating metal (such as copper, nickel, tin or a combination thereof) to form a new one. End of the electrode paths, solving the porous metal such as aluminum paste can not export the proper resistance is too high resistive layer resistance problem.

The invention utilizes the material and structure mode of changing the resistance end electrode of the wafer, and replaces the original silver end electrode with a high solid content aluminum end electrode directly for high resistance value wafer electrode, from printing to sintering and electroplating, by increasing the current, the surface can be passed Alumina is used to directly lead the high-resistance resistive layer to form a via; on the other hand, the low-resistance chip resistor is replaced by a porous aluminum terminal electrode with a porous aluminum terminal electrode, and a new structural protective layer and a resistive layer are used to have different current conduction. The path replaces the conventional structure protective layer and the resistance layer with the same current conduction path. The printing and sintering are as shown in Fig. 4, wherein (a) is a low resistance (100mΩ) wafer resistance aluminum terminal electrode printing and sintering diagram, b) Printed and sintered graph of high resistance (100KΩ) wafer resistance aluminum terminal electrode. The wafer resistance porous aluminum terminal electrode obtained by the side electrode side printing side electrode (electroplated copper, nickel, tin or a combination thereof) is as shown in Fig. 5.

For different resistance values, the chip resistance is aluminum as the terminal electrode, and the high resistance (1206/33k Ω) chip resistance has no reduction in the protective layer. The representative resistance layer can only be derived from the high solid content aluminum terminal electrode, so the resistance value is electroplated. The side electrode (such as electroplated copper, nickel, tin or a combination thereof) is almost unchanged before and after, as long as the current is increased, the high resistance resistive layer can be directly led out through the aluminum oxide surface of the aluminum end electrode to form a path; For low resistance (1206/200 Ω) wafer resistance, the porous aluminum is used as the terminal electrode and the protective layer is reduced. The resistance value can be greatly reduced and concentrated after plating the side electrode, which represents the resistance layer after plating the side electrode. A new conduction path is introduced to replace the original aluminum terminal electrode, and the resistance values of the two kinds of chip resistor structures are shown in Table 1. In addition, the present invention is also directed to a general silver terminal electrode chip resistor and the inventive porous aluminum end of the present invention. The electrode chip resistor is tested for sulfurization resistance at 105 ° C and saturated sulfur vapor for 1000 hours. The results of the vulcanization test are shown in Table 2, which shows that the porous aluminum terminal is used. Chip Resistors substituted silver terminal electrodes can indeed achieve improved chip resistors vulcanization problems, and further can be substituted Application Effect silver terminal electrodes to the porous aluminum terminal electrodes with the application part of silver of any action to achieve a significant cost reduction effect.

Table I

Table II

The electroplated metal nickel or copper used in the side terminal electrode of the invention has lower resistivity than the metal silver paste. Even in the case of a high solid content metal silver paste, the present invention directly connects the low resistance resistive layer with the side end nickel electrode instead of the original one. The front side silver electrode is used to connect the resistance layer, so that the front side silver electrode functions only for the post side nickel electrode, and the conductivity can be as long as the side end electrode can be coated, so that the low solid content silver paste can be used. For use, other metal conductivity can be used for coating the side electrode, such as porous aluminum or copper. In addition, the side-side nickel electrode is connected to the resistive layer, and its resistivity is much lower than that of the resistive layer. Even a low-resistance resistive layer does not effectively affect the final resistance of the entire resistor, resulting in a low variation. Resistance value resistance control is easy.

Thereby, the present invention utilizes a new wafer resistor terminal electrode material and a new terminal electrode structure as shown in FIG. 3, and replaces the current high unit price silver terminal electrode with a low cost porous aluminum terminal electrode, when the aluminum terminal electrode is applied. High resistance wafer resistance, component structure is unchanged, only need to increase the current (Fig. 2), on the other hand, when the porous aluminum terminal electrode is applied to the lower resistance chip resistance, the new structure can be protected by a protective layer The resistance layer size changes the current conduction path from the original through-printing front-end electrode on-resistance layer path to a new path on the side-end electrode conduction resistance layer. The invention has two major innovation advantages:

1. Replacing the original silver-end electrode with a porous aluminum terminal electrode can greatly reduce the material cost of the wafer resistor terminal electrode.

2. Replacing the original silver-end electrode with a porous aluminum end electrode can completely overcome the problem of the original wafer resistance vulcanization, which is very helpful for the chip resistor to enter the vehicle electronics.

In summary, the present invention is a method for manufacturing a vulcanization resistant wafer resistor for a vehicle, which can effectively improve various disadvantages of the conventional use, and replace the original silver-end electrode with a porous aluminum end electrode, so that the plating metal of the side end electrode can pass through the front side. The end porous aluminum electrode is connected with the resistance layer, and the low resistance resistance layer is directly led out to form a new terminal electrode path, which can greatly reduce the material cost of the wafer resistor terminal electrode, and can completely overcome the problem of the original wafer resistance vulcanization. It can be effectively applied to automotive electronics, improve the anti-vulcanization ability of wafer resistors, and thus make the invention more progressive, more practical, and more in line with the needs of users. It has indeed met the requirements of the invention patent application, and has patented according to law. Application.

However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.

S101~s110‧‧‧Steps

Claims (7)

[Item 1] A method for manufacturing a vulcanization resistant wafer resistor for a vehicle, comprising:
(A) End electrode printing and sintering: firstly, a back end electrode which is separated from each other and formed without two phases is printed on the back surface of the substrate, and a front end electrode which is not connected to each other is formed on the front surface of the substrate, and then the front end electrode is not connected to each other. The substrate is sent to a sintering furnace for performing a high-temperature sintering operation at 600 to 900 ° C, so that the back end electrode and the front end electrode can be sintered with the substrate; wherein the front end electrode is a low solid content porous aluminum electrode ;
(B) resistive layer printing and sintering: a resistive layer is printed on the substrate between the two-phase spaced front end electrodes, and the two ends of the resistive layer extend to the front end electrodes, so that the two resistive layers The end portion is overlapped on the end portion of the front end electrode spacing surface, and then the substrate is sent to a sintering furnace for high temperature sintering operation at 600 to 900 ° C, so that the resistance layer can be melted with the substrate. Knot
(C) inner coating printing and sintering: printing on the sintered resistive layer to form an inner coating layer, and the inner coating layer is smaller in size than the resistive layer without contacting the front end electrodes, so that the resistor The two ends of the layer are exposed, and then the substrate is sent to a sintering furnace for high-temperature sintering operation at 450-700 ° C, so that the inner coating layer can be sintered with the resistance layer;
(D) Laser cutting: the substrate is sent to a laser cutting device, and the resistive layer is cut on the inner protective layer by laser light, and a regulating groove of a desired shape is cut out over the resistive layer to trim the resistor The resistance value of the layer;
(E) overcoat printing and sintering: reprinting on the surface of the inner coating to form an outer coating, and the outer coating has the same size as the inner coating, and is smaller than the resistive layer without contacting the Waiting for the front end electrode to expose both ends of the resistive layer, and then feeding the substrate into a sintering furnace for sintering at 150 to 250 ° C, so that the outer coating layer can be sintered with the inner coating layer, and Forming a protective layer by the inner and outer coating layers;
(F) word layer printing: an identification code representing the resistance of the chip is printed on the protective layer;
(G) Folds: the substrate in the form of a sheet is sent to a rolling device, and the substrate is split into strips by a rolling division method;
(H) side electrode side guide printing: printing conductive materials on both sides of the strip-shaped substrate, forming two side end electrodes above the exposed end portions of the resistive layer, the side end electrodes covering the front ends Electrode and the back end electrodes, and then the strip substrate on which the end electrode side guide printing is completed is sent to the sintering furnace for sintering at 150 to 250 ° C, so that the side end electrode after the side guide printing can be connected to the front end The electrode and the back end electrode are sintered such that the front end electrodes on the same side of the substrate are electrically connected to the back end electrodes, and the side end electrodes are in contact with the front end electrodes and are transparent a front end electrode made of porous aluminum is connected to the resistance layer;
(I) Folding: the strip substrate which is sintered by the side end electrode is again divided by the rolling device, and the strip-shaped substrate is folded, so that the connected chip resistors are divided into many independent and have two front end electrodes and two back sides. a terminal electrode, two side end electrodes, a resistance layer, and a granular body including a protective layer of the undercoat layer and the overcoat layer; and (J) electroplating: feeding the wafer resistance formed into a granularity to the plating bath for plating In the operation, a plating layer is plated on the outside of the side electrode of the chip resistor conductive material to obtain a vulcanization resistant chip resistor for the vehicle. [Item 2] The method for manufacturing a vulcanization resistant chip resistor for a vehicle according to the first aspect of the invention, wherein the material of the substrate is an alumina ceramic substrate.
[Item 3] The method for manufacturing a vulcanization resistant chip resistor for a vehicle according to claim 1, wherein the protective layer has a size smaller than the resistance layer by at least 1 micrometer (μm) or more. [Item 4] The method for manufacturing a vulcanization resistant chip resistor for a vehicle according to the first aspect of the invention, wherein the two side end electrodes are selected from the group consisting of copper, nickel, tin or a combination thereof. [Item 5] The method for manufacturing a vulcanization resistant chip resistor for a vehicle according to claim 1, wherein the material of the undercoat layer is glass. [Item 6] The method for manufacturing a vulcanization resistant chip resistor for a vehicle according to the first aspect of the invention, wherein the material of the overcoat layer is an epoxy resin. [Item 7] The method for manufacturing a vulcanization resistant chip resistor for a vehicle according to claim 1, wherein the front end electrode is further a high solid content aluminum electrode suitable for high resistance wafer resistance.