TW202213391A - Conducting wire with high conductivity, alloy and manufacturing method of new-shape terminal electrode for converting the thick-film aluminum electrode into a thick-film metal or alloy electrode with high conductivity by chemical redox conversion - Google Patents

Conducting wire with high conductivity, alloy and manufacturing method of new-shape terminal electrode for converting the thick-film aluminum electrode into a thick-film metal or alloy electrode with high conductivity by chemical redox conversion Download PDF

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TW202213391A
TW202213391A TW110118633A TW110118633A TW202213391A TW 202213391 A TW202213391 A TW 202213391A TW 110118633 A TW110118633 A TW 110118633A TW 110118633 A TW110118633 A TW 110118633A TW 202213391 A TW202213391 A TW 202213391A
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李文熙
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成電智慧材料股份有限公司
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Abstract

Disclosed are a conducting wire with high conductivity, an alloy and a manufacturing method of a new-shape terminal electrode, in which two innovating material methods are provided for improving the conductivity of a thick-film aluminum electrode to be equal to or approximately equal to the conductivity of a thick-film printed silver electrode or a copper electrode sintered at a reducing atmosphere, and a new-shape terminal electrode of a laminated ceramic component is manufactured by using such a novel material. The material is manufactured by the steps of: converting the thick-film aluminum electrode into a thick-film metal or alloy electrode with high conductivity by chemical redox conversion; chemically or physically coating the surface of a metal aluminum particle with a thin film to form a core-shell structure, performing sintering to raise the temperature for generating a film-coated metal and aluminum alloy, and liquefying the alloy to connect closest stacked aluminum particles so as to achieve a thick-film printed aluminum electrode with ultra high conductivity. The innovative electrode shape enables such a technology to be applicable to the terminal electrode of the laminated ceramic component, and a five-side terminal electrode manufactured by immersion plating and high-temperature sintering is changed into a low-temperature two/three-side terminal electrode manufactured by printing and wet electroplating or chemical deposition.

Description

高導電率導線、合金與新形狀端電極製作方法High-conductivity wire, alloy and new-shaped terminal electrode fabrication method

本發明係有關於一種高導電率導線、合金與一種新形狀積層陶 瓷元件端電極的製作方法,尤指涉及一種可以改善厚膜鋁電極的導電率與厚膜印刷銀電極或是還原氣氛下燒結的銅電極導電率相當或是接近的高導電率導線與合金,特別係指一種利用化學氧化還原置換將厚膜鋁電極(含置換金屬)置換成高導電率的厚膜銅電極或是其他金屬如鎳與合金;另一種係指厚膜印刷鋁(含置換金屬)電極燒結毋需進一步化學置換處理,即可以得到跟空氣下燒結印刷銀電極或還原氣氛下燒結銅電極導電率相當的高導電率導線或是其他金屬如鎳與合金;利用此材料創新技術可以創新電極新形狀的應用,將目前被動元件的積層陶瓷元件利用浸鍍與高溫燒附的五邊端電極改成為印刷與濕式電鍍或是化鍍製作的低溫二~三邊端電極。 The invention relates to a high-conductivity wire, an alloy and a new-shaped laminated ceramic The invention relates to a method for making a terminal electrode of a ceramic element, especially to a high-conductivity wire and an alloy that can improve the conductivity of a thick-film aluminum electrode that is equal to or close to that of a thick-film printed silver electrode or a copper electrode sintered in a reducing atmosphere, In particular, it refers to a thick-film aluminum electrode (including replacement metal) that uses chemical redox substitution to replace a thick-film copper electrode with high conductivity or other metals such as nickel and alloys; the other refers to thick-film printed aluminum (including replacement metal). ) Electrode sintering does not require further chemical replacement treatment, that is, high-conductivity wires or other metals such as nickel and alloys can be obtained with the conductivity of sintered printed silver electrodes under air or sintered copper electrodes under reducing atmosphere. The application of the new shape of the innovative electrode changes the current passive element multilayer ceramic element using immersion plating and high-temperature sintering to the low-temperature two- to three-side terminal electrode produced by printing and wet electroplating or electroless plating.

目前金屬化技術的市場主流材料是厚膜印刷銀電極,其製程雖 可在空氣下燒結,但金屬銀是屬於貴金屬,材料成本昂貴。另一替代材料是厚膜印刷銅電極,雖是低成本的銅材料,但金屬銅在高溫下燒結容易氧化,所以必須在還原氣氛像氮氣保護下方可以避免銅電極氧化,因此導致製程成本昂貴。另外,在超低溫燒結小於200°C必須使用奈米銀粉製作奈米銀膏才可以得到緻密的高導電率銀電極,然而奈米銀粉價格非常昂貴,幾乎是目前銀粉的十倍價格。因此,厚膜印刷銀膏或是奈米銀膏皆是屬於貴金屬材料,成本非常高,另一方面以往這些卑金屬導電厚膜或是合金厚膜印刷導電膏則都需要在高溫與特殊還原氣氛下處理來製作,造成製作成本大幅升高,不利於市場上競爭;舉例而言,厚膜印刷銅膏須在還成氣氛氮氣下燒結才不會氧化,導致製程成本昂貴。 At present, the mainstream material of metallization technology is thick-film printed silver electrodes. It can be sintered in air, but metallic silver is a precious metal, and the material cost is expensive. Another alternative material is thick-film printed copper electrodes. Although it is a low-cost copper material, metal copper is easily oxidized when sintered at high temperatures. Therefore, oxidation of copper electrodes must be avoided under a reducing atmosphere such as nitrogen protection, resulting in expensive manufacturing process. In addition, when the ultra-low temperature sintering is less than 200°C, nano-silver powder must be used to make nano-silver paste to obtain dense and high-conductivity silver electrodes. However, the price of nano-silver powder is very expensive, almost ten times the price of current silver powder. Therefore, thick-film printing silver paste or nano-silver paste is a precious metal material, and the cost is very high. On the other hand, in the past, these base metal conductive thick film or alloy thick film printing conductive pastes required high temperature and special reducing atmosphere. For example, the thick-film printing copper paste must be sintered in a nitrogen atmosphere to prevent oxidation, resulting in an expensive manufacturing process.

厚膜印刷鋁電極可以在製程成本低的空氣下燒結,原材料也非 常便宜,唯一的最大缺點是厚膜金屬鋁粉顆粒表面會有一層極薄的氧化鋁膜,導致厚膜印刷鋁電極的金屬鋁粉在燒結時無法收縮達到緻密化目的與氧化鋁層的存在阻擋金屬鋁顆粒的接觸,因此厚膜鋁電極的導電率遠低於一般厚膜銀電極或是銅電極,其導電率僅為厚膜印刷空氣下燒結之銀電極或是還原氣氛下燒結之銅電極的1/500到1/1000,目前厚膜導體市場只有太陽能電池作為反射且擁有大面積的背電極使用。 Thick-film printed aluminum electrodes can be sintered in air with low process costs, and the raw materials are not Very cheap, the only biggest disadvantage is that there will be a very thin aluminum oxide film on the surface of the thick film metal aluminum powder particles, which causes the metal aluminum powder of the thick film printed aluminum electrode to be unable to shrink during sintering to achieve the purpose of densification and the existence of the aluminum oxide layer. Block the contact of metal aluminum particles, so the conductivity of thick film aluminum electrode is much lower than that of general thick film silver electrode or copper electrode, and its conductivity is only silver electrode sintered under thick film printing air or copper sintered under reducing atmosphere 1/500 to 1/1000 of the electrode, currently only solar cells are used as a reflective and large-area back electrode in the thick film conductor market.

另外在電極形狀部分,請參照表一所示,目前被動元件之端電 極製作技術主要有兩種,第一種為五邊端電極技術,其結構如第17圖(a)所示,內電極1堆疊於陶瓷體2內,兩端為端電極3,主要製程如第18圖所示,係使用浸鍍製程一體成形,再經過高溫熱處理,如果是銅、鎳導電膏則需在還原氣氛下必避免氧化之熱處理製程;第二種為三邊端電極技術,其結構如第 17圖(b)所示,主要製程係利用網版印刷製作正面端電極4、背面端電極5與燒附,然後再利用濺鍍製作側邊端電極6。在成形的端電極的外觀形狀上,第一種五邊利用浸鍍一體成型的端電極容易有月亮邊形狀,如第19圖(a)所示,其中箭頭所指即為月亮邊形狀;第二種三邊利用印刷與濺鍍成型的端電極方正無月亮邊形狀,第19圖(b)所示,其中箭頭所指表示該端電極方正無月亮邊形狀。 表一   五邊端電極技術 三邊端電極技術 形狀與製程 1.     五邊端電極 2.     浸鍍+燒附 1.     三邊端電極 2.     印刷+燒附+濺鍍 應用 積層陶瓷電容器 晶片電阻器 示意圖 如第17圖(a)所示 如第17圖(b)所示 實際樣品 如第19圖(a)所示 如第19圖(b)所示 特色 1.     端電極形狀有月亮邊 2.     浸鍍端電極一體成型(五邊) 1.     端電極形狀方正無月亮邊 2.     端電極兩次成型,分別以印刷正背電極(二邊)再加上濺鍍側電極(一邊) In addition, for the electrode shape, please refer to Table 1. There are currently two main techniques for making terminal electrodes for passive components. The first is the pentagonal terminal electrode technology. 1 is stacked in the ceramic body 2, and the two ends are terminal electrodes 3. The main process is shown in Figure 18. It is integrally formed by immersion plating process, and then undergoes high temperature heat treatment. If it is copper or nickel conductive paste, it needs to be in a reducing atmosphere. The heat treatment process that must avoid oxidation; the second is the three-sided electrode technology, its structure is shown in Figure 17 (b), the main process is to use screen printing to make the front end electrode 4, the back end electrode 5 and the sintering. Then, the side terminal electrodes 6 are formed by sputtering. In terms of the appearance of the formed terminal electrode, the first type of terminal electrode integrally formed by immersion plating is likely to have a moon edge shape, as shown in Figure 19 (a), where the arrow points to the moon edge shape; Two kinds of three-sided terminal electrodes formed by printing and sputtering have a square shape without a moon edge, as shown in Figure 19(b), where the arrow points indicate that the terminal electrode has a square shape without a moon edge. Table I Pentagonal electrode technology Trilateral terminal electrode technology shape and process 1. Pentagonal terminal electrode 2. Dip plating + sintering 1. Trilateral terminal electrode 2. Printing + sintering + sputtering application Multilayer Ceramic Capacitors Chip resistors Schematic As shown in Figure 17(a) As shown in Figure 17(b) actual sample As shown in Figure 19(a) As shown in Figure 19(b) feature 1. The terminal electrode shape has a moon edge 2. The dip-plated terminal electrode is integrally formed (five sides) 1. The shape of the terminal electrode is square and no moon side. 2. The terminal electrode is formed twice by printing the front and back electrodes (two sides) and the sputtering side electrode (one side).

目前積層陶瓷電容器技術往利用薄介電層、多層數內電極之高 電容值方向發展,因多層陶瓷與內電極共後,由於金屬電極與陶瓷生胚之收縮不匹配容易產生內應力,當在進行端電極高溫燒附時此內應力容易釋放出能量造成元件裂縫,因此對於端電極之燒附溫度能愈低愈好係目前研發之趨勢,另外積層陶瓷電容器之元件尺寸也愈做愈小,端電極之製作也需愈來愈精密,形狀方正要求也愈來愈高。 At present, the technology of multilayer ceramic capacitors often utilizes thin dielectric layers and high multi-layer internal electrodes. The capacitance value develops in the direction. Because the multi-layer ceramic and the inner electrode are shared, the internal stress is easily generated due to the mismatch between the shrinkage of the metal electrode and the ceramic green embryo. When the terminal electrode is sintered at high temperature, the internal stress is easy to release energy and cause component cracks. Therefore, the lower the sintering temperature of the terminal electrode, the better is the current research and development trend. In addition, the size of the components of the multilayer ceramic capacitor is getting smaller and smaller, the production of the terminal electrode also needs to be more and more precise, and the shape and square requirements are also becoming more and more important. high.

鑑於上述習知技藝之各項問題,為了能夠兼顧解決之,發展一 種既可提升厚膜印刷鋁電極之導電率能跟厚膜印刷空氣下燒結之銀電極或是還原氣氛下燒結之銅電極導電率相當或是接近,並能進一步結合新材料創新,利用類晶片電阻器之三邊端電極技術來製作積層陶電容器之發明實有必要。 In view of the above-mentioned problems of the prior art, in order to solve them both, a This can improve the conductivity of thick film printed aluminum electrodes to be comparable to or close to that of silver electrodes sintered in thick film printing air or copper electrodes sintered in reducing atmosphere, and can be further combined with new material innovation, using chip-like The invention of the three-side terminal electrode technology of the resistor to make the multilayer ceramic capacitor is really necessary.

本發明之主要目的係在於,克服習知技藝所遭遇之上述問題, 並提供一種高導電率導線、合金與新形狀端電極製作方法,提出兩種創新方法 可以改善厚膜鋁電極的導電率與厚膜印刷銀電極或是還原氣氛下燒結的銅電極導電率相當或是接近。 The main purpose of the present invention is to overcome the above-mentioned problems encountered in the prior art, And provide a high-conductivity wire, alloy and new shape terminal electrode manufacturing method, and propose two innovative methods The conductivity of thick-film aluminum electrodes can be improved to be comparable or close to those of thick-film printed silver electrodes or copper electrodes sintered in a reducing atmosphere.

本發明之另一目的係在於,提供一種高導電率導線、合金與新 形狀端電極製作方法,厚膜印刷鋁電極燒結毋需進一步化學置換處理,即可以得到跟空氣下燒結印刷銀電極或還原氣氛下燒結銅電極導電率相當。 Another object of the present invention is to provide a high-conductivity wire, an alloy and a new With the method for making the shaped end electrode, the sintering of the thick-film printed aluminum electrode does not require further chemical replacement treatment, so that the conductivity can be comparable to that of the printed silver electrode sintered in air or the sintered copper electrode in a reducing atmosphere.

為達以上之目的,本發明係一種高導電率導線、合金與新形狀 端電極製作方法,係在數個金屬鋁顆粒表面以化學或物理方式覆膜一層薄的金屬薄膜,形成核鋁殼金屬結構,利用燒結升溫使該殼金屬與該核鋁的外部形成一鋁殼金屬合金,再升溫至300~660°C超過此鋁殼金屬合金熔點的燒結溫度,利用液化該鋁殼金屬合金來連結周圍最緻密堆積排列之金屬鋁顆粒,毋需進一步化學置換處理,即能製作出高導電率厚膜鋁電極之高導電率厚膜鋁膏。 In order to achieve the above purpose, the present invention is a high-conductivity wire, an alloy and a new shape The method for making terminal electrodes is to coat a thin metal film on the surface of several metal aluminum particles by chemical or physical means to form a core aluminum shell metal structure, and use sintering and heating to make the shell metal and the outside of the core aluminum form an aluminum shell The metal alloy is heated to a sintering temperature of 300-660°C exceeding the melting point of the aluminum shell metal alloy, and the aluminum shell metal alloy is liquefied to connect the most densely packed metal aluminum particles around without further chemical replacement treatment. A high-conductivity thick-film aluminum paste for high-conductivity thick-film aluminum electrodes is produced.

於本發明上述實施例中,該覆膜之金屬薄膜為銀金屬薄膜,而 該鋁殼金屬合金為鋁銀合金(Ag 2Al)。 In the above-mentioned embodiment of the present invention, the metal film of the coating is a silver metal film, and the metal alloy of the aluminum shell is an aluminum-silver alloy (Ag 2 Al).

於本發明上述實施例中,該些金屬鋁顆粒係以大小粒徑5 μm 與2 μm最緻密堆積之形式排列。 In the above embodiments of the present invention, the metal aluminum particles are 5 μm in size and particle size Arranged in the most densely packed form with 2 μm.

於本發明上述實施例中,該高導電率厚膜鋁膏可印刷至各類盤 狀、塊狀陶瓷元件表面電極,例如安規電容、GPS天線,熱敏電阻(NTC、PTC)、壓敏電阻或可應用在表面當電極的所有元件。 In the above embodiments of the present invention, the high-conductivity thick-film aluminum paste can be printed on various disks Surface electrodes of shaped and bulk ceramic components, such as safety capacitors, GPS antennas, thermistors (NTC, PTC), varistors or all components that can be used as electrodes on the surface.

於本發明上述實施例中,該高導電率厚膜鋁電極適用於盤狀陶 瓷元件、金屬板、玻璃基板,或是與低溫陶瓷生胚共燒內電極使用。 In the above-mentioned embodiments of the present invention, the high-conductivity thick-film aluminum electrode is suitable for Porcelain components, metal plates, glass substrates, or co-fired internal electrodes with low-temperature ceramic green embryos.

本發明之又一目的係在於,提供一種整合厚膜印刷與電鍍沉積 技術,利用空氣下厚膜印刷與燒結,再利用金屬氧化還原的沉積技術來製作卑 金屬導電厚膜或合金厚膜之高導電率導線、合金與新形狀端電極製作方法。 Another object of the present invention is to provide an integrated thick film printing and electroplating deposition technology, using thick film printing and sintering under air, and then using metal redox deposition technology to make base A method for making high-conductivity wires, alloys and new-shaped terminal electrodes of metal conductive thick film or alloy thick film.

為達以上之目的,本發明係一種高導電率導線、合金與新形狀 端電極製作方法,係利用厚膜印刷一高氧化電位的厚膜鋁層後(含置換金屬),再置放在一低氧化電位的金屬溶液中,控制溶液溫度與浸置時間以進行化學氧化還原置換反應成為低氧化電位的厚膜金屬層。 In order to achieve the above purpose, the present invention is a high-conductivity wire, an alloy and a new shape The method of making the terminal electrode is to use a thick film to print a thick film aluminum layer with a high oxidation potential (including a replacement metal), and then place it in a metal solution with a low oxidation potential, and control the solution temperature and immersion time for chemical oxidation. The reduction-replacement reaction results in a thick-film metal layer with a low oxidation potential.

於本發明上述實施例中,該金屬溶液可為硫酸銅、硫酸鎳、硫 酸錳、硫酸鉻、矽化合物或其組合。 In the above embodiments of the present invention, the metal solution can be copper sulfate, nickel sulfate, sulfur Manganese acid, chromium sulfate, silicon compounds or combinations thereof.

於本發明上述實施例中,該厚膜金屬層可為厚膜銅層、厚膜鎳 層、厚膜銅鎳合金層、厚膜銅錳鎳合金層、或厚膜鎳鉻矽合金層。 In the above embodiments of the present invention, the thick-film metal layer may be a thick-film copper layer, a thick-film nickel layer layer, thick-film copper-nickel alloy layer, thick-film copper-manganese-nickel alloy layer, or thick-film nickel-chromium-silicon alloy layer.

於本發明上述實施例中,該厚膜金屬層係一種空氣下燒結成為 高導電率的銅電極或銅固晶電極。 In the above-mentioned embodiments of the present invention, the thick film metal layer is sintered under air to form a High conductivity copper electrode or copper die-bonding electrode.

於本發明上述實施例中,該銅電極可應用製作於從低溫熱處理 到高溫燒結的塑膠軟板、玻璃基板、太陽能矽基板與陶瓷基板,以及製作創新積層陶瓷電容器新形狀端電極,於其中該塑膠軟板處理溫度為低溫70~200°C,該玻璃基板處理溫度為中溫500~600°C,該太陽能矽基板處理溫度為中溫500~600°C,該陶瓷基板處理溫度為高溫850~1000°C。 In the above-mentioned embodiment of the present invention, the copper electrode can be applied to be fabricated from low temperature heat treatment To high temperature sintered plastic flexible boards, glass substrates, solar silicon substrates and ceramic substrates, as well as new shape terminal electrodes for the production of innovative multilayer ceramic capacitors, where the processing temperature of the plastic flexible board is a low temperature of 70-200°C, and the processing temperature of the glass substrate is It is a medium temperature of 500-600°C, the processing temperature of the solar silicon substrate is a medium temperature of 500-600°C, and the processing temperature of the ceramic substrate is a high temperature of 850-1000°C.

於本發明上述實施例中,該積層陶瓷電容器新形狀端電極,係 利用銅或鎳置換化鍍製作積層陶瓷電容器的銅或鎳的側端電極,該積層陶瓷電容器低溫側端電極製程加上在內電極的印刷製作上下端電極,可供製作出積層陶瓷電容器三邊新形狀端電極。 In the above-mentioned embodiments of the present invention, the terminal electrodes of the multilayer ceramic capacitor with a new shape are The copper or nickel side end electrodes of the multilayer ceramic capacitor are made by copper or nickel substitution plating. New shape terminal electrode.

於本發明上述實施例中,該積層陶瓷電容器側端電極可進一步 藉由一般(常規)化鍍、電鍍與濺鍍方式製作積層陶瓷電容器的銅或鎳的側端 電極。 In the above-mentioned embodiment of the present invention, the side terminal electrode of the multilayer ceramic capacitor can be further Fabrication of copper or nickel sides of MLCCs by general (conventional) electroless plating, electroplating and sputtering electrode.

請參閱『第1圖~第16C圖』所示,係分別為本發明之氧化 還原反應銅顆粒置換鋁顆粒與銅厚膜置換鋁厚膜示意圖、本發明利用金屬之氧化還原反應進行置換示意圖、本發明的高導電率銅電極應用在各種不同基板之正面與背面示意圖、本發明利用大小尺寸覆膜金屬鋁顆粒來達到厚膜鋁電極之最緻密堆積排列示意圖、本發明之積層陶瓷電容器二~三邊端電極與習用之積層陶瓷電容器五邊端電極結構比較示意圖、本發明之積層陶瓷電容器二~三邊端電極增加側邊內電極密度示意圖、本發明之積層陶瓷電感器二~三邊端電極增加側邊內電極密度示意圖、本發明之低溫陶瓷共燒LTCC濾波器二~三邊端電極增加側邊內電極密度示意圖、本發明將雙面太陽能之背鋁電極轉換成高導電率銅電極的示意圖、本發明的雙面太陽能之背鋁電極轉換成高導電率銅電極後使太陽能電池光電轉換效率提升示意圖、本發明的低溫銅固晶與奈米銀固晶的附著力測試結果示意圖、本發明之積層陶瓷電容器二~三邊端電極之製作流程示意圖、本發明以低溫鋁膏製作積層陶瓷元件端電極後再經由硫酸銅置換成銅端電極成果圖、本發明之利用積層陶瓷電容器側邊端電極電鍍(化鍍)製作示意圖、本發明之積層陶瓷電容器利用側邊密集鎳內電極以濕式化學處理引導出鎳側端電極結構成果圖、本發明之積層陶瓷電容器二~三邊端電極成果圖、本發明厚膜印刷銀包鋁金屬膏在不同溫度燒結之導電率示意圖、本發明隨著燒結溫度升高生成Ag 2Al之XRD圖、及本發明銀包鋁金屬膏在不同溫度下燒結顯微結構的SEM圖。如圖所示:本發明係一種高導電率導線、合金與新形狀端電極製作方法,該高導電率導線與合金能應用於軟板RFID天線、PCB封裝固晶、太陽能電池、陶瓷元件端電極、LED散熱基板與玻璃基板,提出兩種創新方法可以改善厚膜鋁電極的導電率與厚膜印刷銀電極或是還原氣氛下燒結的銅電極導電率相當或是接近。 Please refer to "Fig. 1 to Fig. 16C", which are schematic diagrams of the redox reaction of copper particles replacing aluminum particles and copper thick film replacing aluminum thick film, the present invention using the redox reaction of metal to replace the schematic diagram, The high-conductivity copper electrode of the present invention is applied to the front and back sides of various substrates. The present invention utilizes large and small coated metal aluminum particles to achieve the most densely packed arrangement of thick-film aluminum electrodes. The multilayer ceramic capacitor of the present invention 2~ A schematic diagram of the comparison of the structure of the three-side terminal electrode and the conventional MLCC five-sided terminal electrode, the schematic diagram of the increase of the inner electrode density on the side of the two-to-three-sided terminal electrode of the multilayer ceramic capacitor of the present invention, the two-to-three-sided terminal of the MLCC of the present invention The schematic diagram of increasing the density of the inner electrode on the side of the electrode, the schematic diagram of increasing the density of the inner electrode on the side of the low-temperature ceramic co-fired LTCC filter of the present invention, the schematic diagram of increasing the density of the inner electrode on the side of the low-temperature ceramic co-fired LTCC filter, the present invention converts the back aluminum electrode of the double-sided solar energy into a high-conductivity copper electrode The schematic diagram of the present invention, the back aluminum electrode of the double-sided solar energy of the present invention is converted into a high-conductivity copper electrode, and the photoelectric conversion efficiency of the solar cell is improved. The schematic diagram of the manufacturing process of the two to three side terminal electrodes of the multilayer ceramic capacitor of the present invention, the present invention uses low-temperature aluminum paste to make the terminal electrodes of the multilayer ceramic element, and then replaces it with copper sulfate. The schematic diagram of the electroplating (electroless plating) of the side electrode, the result of the structure of the nickel side electrode of the multilayer ceramic capacitor of the present invention by using the dense nickel inner electrode on the side by wet chemical treatment, the two to three side ends of the multilayer ceramic capacitor of the present invention Electrode results diagram, schematic diagram of the conductivity of the thick film printing silver-coated aluminum metal paste of the present invention sintered at different temperatures, XRD patterns of Ag 2 Al generated by the present invention as the sintering temperature increases, and silver-coated aluminum metal paste of the present invention at different temperatures SEM image of the sintered microstructure. As shown in the figure: the present invention is a method for making high-conductivity wires, alloys and new-shaped terminal electrodes. The high-conductivity wires and alloys can be applied to flexible board RFID antennas, PCB packaging solid crystals, solar cells, and ceramic components terminal electrodes. , LED heat dissipation substrate and glass substrate, two innovative methods are proposed to improve the conductivity of thick-film aluminum electrodes and thick-film printed silver electrodes or copper electrodes sintered in a reducing atmosphere.

第一種創新方法係厚膜鋁電極(含置換金屬)化學置換成高導 電率厚膜銅電極。此創新方法係整合厚膜印刷與電鍍沉積技術,利用空氣下厚膜印刷與燒結,再利用金屬氧化還原之沉積技術來製作卑金屬導電厚膜或是合金厚膜。 The first innovative approach involves chemical substitution of thick-film aluminum electrodes (containing substitutional metals) into high-conductivity Electricity thick film copper electrodes. This innovative method integrates thick film printing and electroplating deposition technology, uses thick film printing and sintering under air, and then uses metal redox deposition technology to produce base metal conductive thick film or alloy thick film.

此創新方法之原理乃利用金屬的氧化還原反應來置換,如第 1、2圖所示。在第1圖(a)中高氧化電位單顆金屬鋁顆粒11可以浸置在低氧化電位的金屬溶液12中進行氧化還原置換反應,以本實施例而言係將鋁顆粒11置換為銅顆粒13。同理,在第1圖(b)中,一層燒結後印刷高氧化電位的厚膜鋁層21(含置換金屬)如果浸置在低氧化電位的金屬溶液22中,經過一段浸置時間也可以進行氧化還原置換反應成為低氧化電位的厚膜金屬層,以本實施例而言係將厚膜鋁層21置換為厚膜銅層23。 The principle of this innovative method is to use the redox reaction of the metal to replace, such as the first 1 and 2 as shown in Fig. In Figure 1(a), a single metal aluminum particle 11 with a high oxidation potential can be immersed in a metal solution 12 with a low oxidation potential for redox replacement reaction. In this embodiment, the aluminum particle 11 is replaced by a copper particle 13 . Similarly, in Figure 1(b), if a layer of thick-film aluminum layer 21 (containing the replacement metal) with a high oxidation potential printed after sintering is immersed in a metal solution 22 with a low oxidation potential, it can also be immersed for a period of time. The redox substitution reaction is performed to form a thick-film metal layer with a low oxidation potential. In this embodiment, the thick-film aluminum layer 21 is replaced with a thick-film copper layer 23 .

因鋁金屬粉相當便宜,而且氧化電位高,經氫氟酸表面前處理 後即可作為犧牲層使用。如第2圖所示,此厚膜金屬鋁層21擁有很高的氧化電位,很多低氧化電位金屬溶液22如硫酸銅、硫酸鎳、硫酸錳、硫酸鉻、矽化合物都可以用來置換厚膜鋁層21成為厚膜銅層23或是厚膜鎳層24,甚至厚膜銅鎳合金層25或是銅錳鎳、鎳鉻矽合金層。 Because aluminum metal powder is quite cheap and has high oxidation potential, it is surface pretreated with hydrofluoric acid. It can then be used as a sacrificial layer. As shown in Fig. 2, the thick film metal aluminum layer 21 has a high oxidation potential, and many low oxidation potential metal solutions 22 such as copper sulfate, nickel sulfate, manganese sulfate, chromium sulfate, and silicon compounds can be used to replace the thick film The aluminum layer 21 becomes a thick-film copper layer 23 or a thick-film nickel layer 24, or even a thick-film copper-nickel alloy layer 25 or a copper-manganese-nickel, nickel-chromium-silicon alloy layer.

如第3圖所示,係利用本創新方法在各種不同基板,如圖中由 左至右分別為陶瓷、PET膜(厚片)、PET膜(薄片)、玻璃基板及鋁合金機殼所製作出不須在還原氣氛下燒結之高導電率銅導線,其中上排圖為基板正面,下排圖為基板背面。 As shown in Figure 3, the innovative method is used on various substrates, as shown in the figure by From left to right are high-conductivity copper wires made of ceramics, PET film (thick sheet), PET film (thin sheet), glass substrate and aluminum alloy casing that do not need to be sintered in a reducing atmosphere. The upper row is the substrate. The front side, the bottom row is the back side of the substrate.

第二種創新方法係鋁粉前處理的高導電率厚膜鋁電極。為了改 善厚膜鋁電極的導電率,此創新方法係在數個不同大小粒徑的金屬鋁顆粒31 表面以化學或物理方式覆膜一層薄的金屬膜32,形成核(鋁)殼(金屬)結構,利用燒結升溫使該殼金屬與該核鋁的外部形成一鋁殼金屬合金33,再以升溫至300~660°C超過此鋁殼金屬合金熔點的燒結溫度,利用液化該鋁殼金屬合金來連結周圍最緻密堆積排列之金屬鋁顆粒31來達到提升整體厚膜鋁電極的導電率,如第4圖所示,為了達到厚膜鋁電極的最高導電率,利用覆膜在大粒徑5 μm與小粒徑2 μm形式之金屬鋁顆粒31來達到厚膜鋁電極的最緻密堆積排列,如此一來再利用前面覆膜金屬膜32來形成金屬膜鋁的合金與液化連結各顆金屬鋁粉即可達到厚膜鋁電極與目前市場主流厚膜銀電極或是銅電極導電率相當。 The second innovative method is high conductivity thick film aluminum electrodes pretreated with aluminum powder. in order to change To improve the conductivity of thick film aluminum electrodes, this innovative method is based on several metal aluminum particles of different sizes31 The surface is coated with a thin metal film 32 by chemical or physical methods to form a core (aluminum) shell (metal) structure, and the shell metal and the outside of the core aluminum form an aluminum shell metal alloy 33 by heating up by sintering. When the sintering temperature exceeds the melting point of the aluminum shell metal alloy at 300-660°C, the aluminum shell metal alloy is liquefied to connect the most densely packed metal aluminum particles 31 around to improve the conductivity of the overall thick-film aluminum electrode. As shown in Figure 4, in order to achieve the highest conductivity of the thick-film aluminum electrode, the most densely packed arrangement of the thick-film aluminum electrode is achieved by using metal aluminum particles 31 in the form of a large particle size of 5 μm and a small particle size of 2 μm. First, the front-coated metal film 32 is used to form an alloy of metal-film aluminum and liquefy and connect each metal aluminum powder to achieve a thick-film aluminum electrode with the same conductivity as the current mainstream thick-film silver electrode or copper electrode.

本發明利用上述創新高導電材料製作一種創新積層陶瓷元件 端電極新形狀的應用,將目前利用浸鍍與高溫燒附的五邊形端電極形狀改成利用印刷與電鍍或化鍍沉積的三邊形端電極。 The present invention utilizes the above-mentioned innovative high-conductivity material to make an innovative multilayer ceramic element The application of the new shape of the terminal electrode changes the shape of the current pentagonal terminal electrode using immersion plating and high temperature sintering into a triangular terminal electrode using printing and electroplating or electroless plating.

本發明創新積層陶瓷電容器(Multi-layer ceramic capacitors, MLCC)端電極技術與目前已知的積層陶瓷電容器端電極技術在結構、製程、材料及特色上相較之結果如表二及第5圖所示,其中第5圖(a)為本發明創新積層陶瓷電容器端電極(類晶片電阻器端電極)技術製作的積層陶瓷電容器二~三邊端電極,第5圖(b)為目前已知的積層陶瓷電容器端電極技術製作的積層陶瓷電容器五邊端電極。該表二可說明此創新技術係將目前積層陶瓷電容器的五個邊的端電極形狀改成有如目前晶片電阻三個邊的端電極形狀,隨著端電極的形狀改變,製程方法與使用材料也跟著改變。 表二   目前MLCC端電極 本發明創新MLCC端電極 (類晶片電阻器端電極) 示意圖 如第5圖(a)所示 如第5圖(b)所示 結構 五邊電極 三邊電極 製程 浸鍍一體成型+還原氣氛高溫熱處理 網印正背電極(共燒)+電鍍、化鍍、濺鍍 材料 厚膜銅導電膏 銅、鎳溶液 特色   1.     端電極印刷形狀優於浸鍍形狀,特別對小尺寸元件 2.     低溫製程(<100°C) 3.     省略目前MLCC浸鍍製程與銅燒附製程 4.     使用銅、鎳溶液材料成本低 The comparison results of the innovative multilayer ceramic capacitor (MLCC) terminal electrode technology of the present invention and the currently known MLCC terminal electrode technology in terms of structure, process, materials and characteristics are shown in Table 2 and Figure 5. Figure 5(a) is the second-to-three-side terminal electrode of the multilayer ceramic capacitor produced by the innovative multilayer ceramic capacitor terminal electrode (chip resistor-like terminal electrode) technology of the present invention, and Figure 5(b) is currently known. The terminal electrode of the multilayer ceramic capacitor is made by the terminal electrode technology of the multilayer ceramic capacitor. Table 2 shows that this innovative technology changes the shape of the terminal electrodes on the five sides of the current multilayer ceramic capacitor to the shape of the terminal electrodes on the three sides of the current chip resistor. Follow the change. Table II Current MLCC terminal electrodes The present invention innovates MLCC terminal electrodes (chip resistor-like terminal electrodes) Schematic As shown in Figure 5(a) As shown in Figure 5(b) structure pentagonal electrode Trilateral electrode Process Immersion plating integrated molding + high temperature heat treatment in reducing atmosphere Screen printing front and back electrodes (co-fired) + electroplating, electroless plating, sputtering Material Thick Film Copper Conductive Paste Copper and nickel solution feature 1. The printing shape of the terminal electrode is better than the immersion plating shape, especially for small-sized components. 2. Low temperature process (<100°C) 3. The current MLCC immersion plating process and copper sintering process are omitted. 4. The use of copper and nickel solutions has low material cost

由上比較可知,製程上由原先浸鍍一體成形與燒附熱處理,改 變為印刷正背電極再與陶瓷生胚共燒,然後藉由低溫電鍍、化鍍或是濺鍍製程製作側邊第三端電極。 From the above comparison, it can be seen that the process is changed from the original immersion plating integrated forming and sintering heat treatment. The front and back electrodes are printed and co-fired with the ceramic green body, and then the third side electrodes are made by low temperature electroplating, electroless plating or sputtering process.

此積層陶瓷電容器創新二~三邊端電極技術與目前五邊端電 極技術比較至少有四大優勢: 1. 印刷製程取代浸鍍製程製作端電極形狀方正無月亮邊形狀,可以改善端電極形狀的品質問題,特別是小尺寸積層陶瓷電容器。 2. 超低溫製程<100°C,改善減少內應力因端電極高溫還原氣氛下熱處理產生裂縫的品質問題,而且創新端電極高緻密與薄層,可以改善目前利用浸鍍含玻璃的銅膏進行高溫燒結銅端電極品質問題。 3. 省略目前積層陶瓷電容器的浸鍍製程與還原氣氛高溫燒附端電極製程,大幅降低製程成本。 4. 不須使用厚膜銅導電膏,改成銅或是鎳化學溶液,大幅降低材料成本。 This multilayer ceramic capacitor innovative two-to-three-side terminal electrode technology and the current five-side terminal electrode technology There are at least four advantages to the extreme technology comparison: 1. The printing process replaces the immersion plating process to make the terminal electrode shape square without a moon edge, which can improve the quality of the terminal electrode shape, especially for small-sized MLCCs. 2. The ultra-low temperature process is less than 100°C, which improves and reduces the internal stress caused by the heat treatment of the terminal electrode in a high-temperature reducing atmosphere. The quality problem, and the innovative high-density and thin layer of the terminal electrode can improve the current use of glass-containing copper paste for high-temperature dipping. Quality problems of sintered copper terminal electrodes. 3. The current immersion plating process of multilayer ceramic capacitors and the process of high-temperature sintering of terminal electrodes in a reducing atmosphere are omitted, which greatly reduces the process cost. 4. It is not necessary to use thick-film copper conductive paste, and it can be changed to copper or nickel chemical solution, which greatly reduces the material cost.

另外,有關此新穎二~三邊端電極能應用於積層陶瓷元件,如 積層陶瓷電容器(如第6圖(a)、第6圖(b)所示)、積層陶瓷電感器(如第7圖(a)、第7圖(b)所示)與低溫陶瓷共燒LTCC濾波器(如第8圖(a)、第8圖(b)所示)等等皆可以在網版印刷內層電極時在元件兩端印製製作二~三邊端電極的側邊電極的晶種電極,增加側邊電極的電極密度(如第6圖(b)、第7圖(b)與第8圖(b)所示),以利於後製程利用電鍍或是化鍍製作二~三邊端電極的側邊電極。其中,第7圖(a)中a1為線圈,a2為外電極,a3為非磁性陶瓷。 In addition, the novel two- to three-sided terminal electrodes can be applied to laminated ceramic components, such as Multilayer ceramic capacitors (as shown in Fig. 6(a), Fig. 6(b)), multilayer ceramic inductors (as shown in Fig. 7(a), Fig. 7(b)) and low temperature ceramic co-fired LTCC Filters (as shown in Figure 8(a), Figure 8(b)), etc., can be printed on both ends of the component to make side electrodes of two to three side electrodes when the inner layer electrodes are screen-printed. Seed electrodes, increase the electrode density of the side electrodes (as shown in Figure 6(b), Figure 7(b) and Figure 8(b)), in order to facilitate the use of electroplating or electroless plating in the subsequent process to make two ~ The side electrodes of the trilateral end electrodes. Among them, in Fig. 7(a), a1 is a coil, a2 is an external electrode, and a3 is a non-magnetic ceramic.

以下實施例僅舉例以供了解本發明之細節與內涵,但不用於限 制本發明之申請專利範圍。 The following examples are only examples for understanding the details and connotations of the present invention, but are not intended to limit formulate the scope of the patent application of the present invention.

[實施方式一:太陽能電池] 第9A圖所示為太陽能電極背鋁電極,經過本發明所提創新製程,可以將雙面太陽能原先的背鋁電極轉換成高導電率銅電極,因電極導電率增加,使太陽能電池光電轉換效率也隨之提升,如第9B圖所示之雙面太陽能模組的最佳狀態以及此狀態下的前表面與後表面的數據。 同樣製作方法,可以將太陽能電池目前的正銀電極,改印製為高導電率正鋁電極,再將此正鋁電極浸置硫酸銅溶液轉換成高導電率正銅電極,如此一來就可以本發明創新的空氣燒結正銅電極來取代目前太陽能正銀電極。 [Embodiment 1: Solar Cell] Figure 9A shows the back aluminum electrode of the solar electrode. Through the innovative process proposed by the present invention, the original back aluminum electrode of the double-sided solar energy can be converted into a high-conductivity copper electrode. Due to the increase of the electrode conductivity, the photoelectric conversion efficiency of the solar cell is improved. It is also improved, as shown in Fig. 9B, the optimal state of the bifacial solar module and the data of the front and rear surfaces in this state. In the same production method, the current positive silver electrode of the solar cell can be reprinted into a high-conductivity positive-aluminum electrode, and then the positive-aluminum electrode can be immersed in a copper sulfate solution to convert it into a high-conductivity positive copper electrode. The innovative air-sintered positive copper electrode of the present invention replaces the current solar positive silver electrode.

[實施方式二:封裝固晶] 目前固晶膠以錫鉛為主要材料,除了環保議題之外,在應用於高功率固晶時導熱能力不足也是另一議題,因此目前產業使用可以低溫燒結奈米銀來取代現在錫鉛固晶膏,然而奈米銀當固晶膏使用價格相當昂貴,本發明的創新製程空氣下低溫燒結高導電率固晶銅置換鋁膏(含硫酸銅晶體)成為低溫銅固晶b1與目前市面利用奈米固晶銀膏b2(Heraeus)相比係可製作出非常低成本的銅電極,且在特性比較上,第10圖(a)及表三可說明本創新製程低溫銅固晶之特性(如:附著力、導熱性與導電性)的測試結果都可以與目前奈米銀固晶相當,第10圖(b)為第10圖(a)所述低溫銅固晶(銅置換鋁)的顯微結構,其中c1為二極體,c2為銅置換鋁,c3為鍍金基板。表四則可表明本發明的低溫銅固晶(銅置換鋁)的附著力與目前的奈米銀固晶(Heraeus)的附著力相當。 表三 項目 Heraeus (ASP 295-79P2) Alpha (ATROX_800HT2V) Kyocera (XT2773R7) 本發明 銀含量 86±1% 91.1% 80% 銀膠 厚度 ~20μm 18~20μm 18~22μm 20μm 燒結最大溫度 230°C (60min) 在空氣、氮氣下 200°C (120min) 在空氣下 200°C (90min) 在空氣下 250°C (90min) 在氮氣下 <200°C 在空氣下 適用 附著 Pt/Au/Ag Au/Ag/Cu Au/Ag/Cu Au/Ag/Cu 模數 15~40 Gpa(25°C) 9.1 Gpa(25°C) 1.9 Gpa(260°C) 26.2 Gpa(25°C) 18.3 Gpa(260°C) 15~40 Gpa(25°C) 導電性 1x10 -6(Ω*m) 2x10 -6(Ω*m) 4.1x10 -6(Ω*m) 5x10 -7(Ω*m) 導熱性 100~170 W/mk 140 W/mk 200 W/mk 200 W/mk 成本 3.6 USD/g(10kg) 4.7~4.9 USD/g(4kg) 7.7 USD/g(1kg) 5.1 USD/g(10kg) 0.008~0.01 USD/g 表四   附著力(kgf) 附著力(Mpa) 銀膏(85%)- Heraeus 7.5 15.9 本發明-銅置換鋁 7.8 16.8 [Embodiment 2: Encapsulation and bonding] At present, tin-lead is used as the main material for the bonding adhesive. In addition to the environmental protection issue, the insufficient thermal conductivity when applied to high-power bonding is also another issue. Rice silver is used to replace the current tin-lead solid crystal paste. However, nano-silver is quite expensive to use as solid crystal paste. The innovative process of the present invention sinters high-conductivity solid crystal copper at low temperature and replaces aluminum paste (containing copper sulfate crystals) to become low temperature. Compared with the nano-bonded silver paste b2 (Heraeus) currently on the market, copper-bonded b1 can produce very low-cost copper electrodes, and in terms of characteristics, Figure 10 (a) and Table 3 can illustrate this innovation. The test results of the characteristics (such as adhesion, thermal conductivity and electrical conductivity) of the low-temperature copper bonding during the process are comparable to the current nano-silver bonding. Figure 10(b) is the low-temperature copper described in Figure 10(a). The microstructure of solid crystal (copper replaced aluminum), where c1 is a diode, c2 is copper replaced aluminum, and c3 is a gold-plated substrate. Table 4 shows that the adhesion of the low-temperature copper solid crystal (copper substituted aluminum) of the present invention is comparable to that of the current nano-silver solid crystal (Heraeus). Table 3 project Heraeus (ASP 295-79P2) Alpha (ATROX_800HT2V) Kyocera (XT2773R7) this invention silver content 86±1% none 91.1% 80% Silver glue thickness ~20μm 18~20μm 18~22μm 20μm Sintering maximum temperature 230°C (60min) under air, nitrogen 200°C (120min) under air 200°C (90min) under air 250°C (90min) under nitrogen <200°C under air Applicable attachment Pt/Au/Ag Au/Ag/Cu Au/Ag/Cu Au/Ag/Cu modulus 15~40 Gpa(25°C) 9.1 Gpa (25°C) 1.9 Gpa (260°C) 26.2 Gpa(25°C) 18.3 Gpa(260°C) 15~40 Gpa(25°C) conductivity 1x10 -6 (Ω*m) 2x10 -6 (Ω*m) 4.1x10 -6 (Ω*m) 5x10 -7 (Ω*m) thermal conductivity 100~170W/mk 140W/mk 200W/mk 200W/mk cost 3.6 USD/g(10kg) 4.7~4.9 USD/g(4kg) 7.7 USD/g(1kg) 5.1 USD/g(10kg) 0.008~0.01 USD/g Table 4 Adhesion (kgf) Adhesion (Mpa) Silver Paste (85%) - Heraeus 7.5 15.9 The Invention - Copper Replaces Aluminum 7.8 16.8

[實施方式三:RFID天線] 一般目前製作無線射頻識別(radio frequency identification, RFID)天線以約10 μm鋁箔或是銅箔黏貼聚對苯二甲酸乙二酯(polyethylene terephthalate, PET)膜上,再進行複雜印刷、烘烤、曝光、顯影與蝕刻的減法製程來製作RFID天線;另一作法是本發明創新製程與材料,以印刷厚膜鋁膏(含硫酸銅晶體)、經烘烤再進行化學置換在硫酸銅溶液30分鐘後成為高導電率RFID銅天線(其中控制浸置時間形成0 min鋁;5 min稍微銅;10 min部分銅;20 min銅的化學置換處理),此製程除了是加法製程減少材料浪費,製程設備簡易,而且天線特性返回損失也以-24.248 dB優於蝕刻RFID鋁天線的-14.707 dB,結合參見下表五。 表五 RFID天線 材料 製程 特性 傳統 RFID天線 鋁箔 9 μm 印刷光阻、烘烤、曝光、顯影、蝕刻 頻率: 956.25 MHz 返回損失: -14.707 dB 本發明 RFID天線 鋁膏+硫酸銅溶液 厚膜印刷鋁電極、 烘烤化學置換成銅電極 頻率: 937.5 MHz 返回損失: -24.248 dB [Embodiment 3: RFID Antenna] Generally, a radio frequency identification (RFID) antenna is currently made by sticking an aluminum foil or copper foil of about 10 μm on a polyethylene terephthalate (PET) film. The RFID antenna is fabricated by the subtractive process of complex printing, baking, exposure, development and etching; another method is the innovative process and material of the present invention, printing thick-film aluminum paste (containing copper sulfate crystals), baking and then chemically Replacement in the copper sulfate solution after 30 minutes to become a high-conductivity RFID copper antenna (in which the immersion time is controlled to form 0 min of aluminum; 5 min of slight copper; 10 min of partial copper; 20 min of chemical replacement of copper), this process is addition. The process reduces material waste, the process equipment is simple, and the return loss of the antenna characteristic is -24.248 dB better than the -14.707 dB of the etched RFID aluminum antenna, as shown in Table 5 below. Table 5 RFID Antenna Material Process characteristic Traditional RFID Antenna Aluminum foil 9 μm Print photoresist, bake, expose, develop, etch Frequency: 956.25 MHz Return Loss: -14.707 dB RFID antenna of the present invention Aluminum paste + copper sulfate solution Thick film printed aluminum electrodes, baked chemically replaced with copper electrodes Frequency: 937.5 MHz Return Loss: -24.248 dB

[實施方式四:前處理銀覆膜高導電鋁電極應用安規電容] 請參閱第11圖與第18圖所示,比較本發明製作二~三邊端電極積層陶瓷電容器製程與目前標準製作五邊端電極積層陶瓷電容器製程之流程圖,可見本發明創新二~三邊端電極積層陶瓷電容器,係在原來印刷與燒結內鎳電極製程時,同時印刷與燒結上下邊鎳端電極,並在原來電鍍製程以電鍍或化鍍製作側邊端電極,形成新型的積層陶瓷電容器二~三邊端電極,此創新製程可比原先五邊端電極積層陶瓷電容器減少了兩道製程,包含移去原先端電極製作的浸鍍銅膏製程與銅端電極在還原氣氛(氮氣)下高溫燒附製程。而二~三邊端電極積層陶瓷電容器之端電極製程分別在網印內電極製程製作正背電極兩邊,再利用鋁電極置換銅側端電極或是利用電鍍或化鍍端電極製程來製作另一邊側邊電極。 (a)鋁電極置換化鍍側邊銅端電極 先將低溫鋁膏浸鍍與烘烤製作成積層陶瓷元件鋁端電極,如第12圖(a)所示,再將該鋁端電極浸置硫酸銅溶液,讓該鋁端電極置換換成銅端電極,如第12圖(b)所示,其中上圖顯示銅端電極表面,下圖為銅端電極剖面圖。 (b)直接電鍍或化鍍側邊銅或鎳端電極 利用電鍍技術將積層陶瓷電容器浸置硫酸銅或硫酸鎳溶液陰極中,如第13圖所示,可將陽極鎳金屬或銅金屬氧化生成銅離子或鎳離子。由於積層陶瓷電容器側邊電極密度高當陰極,如此一來銅離子或鎳離子就可以還原在積層陶瓷電容器側邊電極上,形成側邊銅電極或側邊鎳電極,如第14圖所示之積層陶瓷電容器利用側邊密集鎳內電極,以濕式化學處理(電鍍、一般化鍍、置換化鍍)引導出鎳側端電極結構成果圖,其中左圖為鎳側端電極表面,中圖與右圖均為鎳側端電極剖面圖。同時新型積層陶瓷元件三邊鎳端電極成果如第15圖所示,係在印刷內鎳電極同時製作的上,下邊鎳端電極,再利用側邊密集鎳內電極,以濕式化學處理(電鍍、一般化鍍、置換化鍍)製作出三邊鎳端電極。 本發明創新二~三邊端電極與原先五邊端電極之電性測試、端電極機械強度測試與焊性測試如表六所示,結果顯示積層陶瓷元件二~三邊端電極之測試結果 稍微優於目前五邊端電極。 表六 1206 Cap. μF tanD I.R. MΩ 拉力 測試 彎曲 測試 溫度循環測試 焊性 測試 創新三邊端 電極 24.5 0.6% 10 >4kg >4.5mm 0/20 0/20 原先五邊端 電極 22.7 0.5% 9 >3.5kg >4mm 0/20 0/20 [Embodiment 4: Pre-treated silver-coated high-conductivity aluminum electrodes are applied to safety capacitors] Please refer to Figure 11 and Figure 18 to compare the process of manufacturing two- to three-side terminal electrode multilayer ceramic capacitors in the present invention and the current standard manufacturing five-side The flow chart of the manufacturing process of the terminal electrode multilayer ceramic capacitor, it can be seen that the two-to-three side terminal electrode multilayer ceramic capacitor of the present invention is in the original process of printing and sintering the inner nickel electrode, printing and sintering the upper and lower nickel terminal electrodes at the same time. The process uses electroplating or electroless plating to make the side terminal electrodes to form a new type of multilayer ceramic capacitor two- to three-side terminal electrodes. This innovative process can reduce two processes compared to the original five-side terminal electrode multilayer ceramic capacitors, including removing the original terminal electrodes. The immersion copper paste process and the copper terminal electrode are sintered at high temperature in a reducing atmosphere (nitrogen). The terminal electrode process of the two-to-three-side terminal electrode MLCC is to make both sides of the front and back electrodes respectively in the screen-printed inner electrode process, and then replace the copper side terminal electrodes with aluminum electrodes or use the electroplating or electroless plating terminal electrode process to make the other side. side electrodes. (a) Aluminum electrode replaces the side copper terminal electrode of electroless plating. First, the low temperature aluminum paste is dipped and baked to make the aluminum terminal electrode of the multilayer ceramic element, as shown in Figure 12(a), and then the aluminum terminal electrode is immersed. Copper sulfate solution, replace the aluminum terminal electrode with a copper terminal electrode, as shown in Figure 12 (b), the upper figure shows the surface of the copper terminal electrode, and the lower figure is a cross-sectional view of the copper terminal electrode. (b) Direct electroplating or electroless plating of side copper or nickel terminal electrodes Using electroplating technology, the multilayer ceramic capacitor is immersed in the cathode of copper sulfate or nickel sulfate solution. As shown in Figure 13, the anode nickel metal or copper metal can be oxidized to form copper or nickel ions. Due to the high density of the side electrodes of the MLCC as the cathode, copper ions or nickel ions can be reduced on the side electrodes of the MLCC to form side copper electrodes or side nickel electrodes, as shown in Figure 14. The multilayer ceramic capacitor uses the dense nickel inner electrode on the side, and uses wet chemical treatment (electroplating, general electroplating, substitution electroplating) to guide the structure of the nickel side terminal electrode. The left picture shows the surface of the nickel side terminal electrode, the middle picture and The figure on the right is a cross-sectional view of the nickel-side terminal electrode. At the same time, the results of the three-side nickel terminal electrode of the new laminated ceramic element are shown in Figure 15. The upper and lower nickel terminal electrodes are simultaneously fabricated by printing the inner nickel electrodes, and then the side dense nickel inner electrodes are used to wet chemical treatment (electroplating). , general chemical plating, displacement chemical plating) to produce three-sided nickel terminal electrodes. The electrical test, mechanical strength test and solderability test of the innovative two-to-three-side terminal electrode of the present invention and the original five-side terminal electrode are shown in Table 6. The results show that the test results of the two-to-three-side terminal electrode of the laminated ceramic component are slightly different. Better than the current pentagon electrode. Table 6 1206 Cap. μF tanD IR MΩ Pull test Bend test temperature cycle test Solderability test Innovative trilateral electrode 24.5 0.6% 10 >4kg >4.5mm 0/20 0/20 Original pentagonal electrode 22.7 0.5% 9 >3.5kg >4mm 0/20 0/20

[實施方式五:前處理銀覆膜高導電鋁電極應用安規電容]。 本發明以化學置換覆膜銀金屬薄膜於金屬鋁粉形成鋁銀核殼結構,再經熱處理形成鋁銀合金(Ag 2Al),藉由液化鋁銀合金連結金屬鋁顆粒可以使導電率與金屬銀電極導電率接近。其中第16A圖顯示厚膜印刷銀包鋁金屬膏在450°C、500°C、550°C與600°C燒結,其導電率分別為1x10 -1Ω*m、3x10- 3Ω*m、6x10 -5Ω*m、1x10- 5Ω*m;第16B圖的X光繞射(X-ray diffraction, XRD)分析顯示隨著燒結溫度升高除了金屬鋁與金屬銀外,又多一項Ag 2Al的生成,此項的熔點約為550°C;第16C圖以掃描式電子顯微鏡(Scanning electron microscopy, SEM)提供的電子顯微結構顯示所有銀包鋁金屬膏燒結在550°C與600°C其顯微結構有明顯變化,在金屬鋁顆粒與鋁顆粒中間有Ag 2Al生成相的連結。 表七是安規電容使用目前銀電極之特性,雖然本發明創新高導電鋁電極導電率與之相較係略低於一般貴金屬銀電極,但製作安規電容當電極,在一般銀電極與本發明創新高導電率鋁電極製作電容的介電特性(C值=0.35 nF與tanδ=0.92%)與機械強度特性(拉力=1.75 kg)上都是相當。 表七 電極材料 燒結溫度 電極導電率 安規電容電容值 安規電容散失因子 拉力 銀電極 600~850°C 9x10 -6(Ω*m) 0.36 nF 0.91% 1.8 kg [Embodiment 5: Pre-treated silver-coated high-conductivity aluminum electrodes are applied to safety capacitors]. In the present invention, an aluminum-silver core-shell structure is formed by chemically replacing the coated silver metal film on the metal aluminum powder, and then an aluminum-silver alloy (Ag 2 Al) is formed by heat treatment. The conductivity of silver electrodes is close. Figure 16A shows that the thick-film printed silver-coated aluminum metal paste was sintered at 450°C, 500°C, 550°C, and 600°C, and its electrical conductivity was 1x10-1 Ω*m, 3x10-3 Ω*m, 6x10-5 Ω*m, 1x10-5 Ω*m; X-ray diffraction (XRD) analysis of Figure 16B shows that with the increase of sintering temperature, in addition to metal aluminum and metal silver, there is another The formation of Ag 2 Al, the melting point of this item is about 550 ° C; the electron microstructure provided by scanning electron microscopy (SEM) in Figure 16C shows that all silver-coated aluminum metal pastes sintered at 550 ° C and At 600 °C, the microstructure has obvious changes, and there is a connection between the metal aluminum particles and the aluminum particles of Ag 2 Al generation phase. Table 7 shows the characteristics of the current silver electrode used in safety capacitors. Although the conductivity of the innovative high-conductivity aluminum electrode of the present invention is slightly lower than that of the ordinary precious metal silver electrode, the safety capacitor is used as the electrode. The dielectric properties (C value = 0.35 nF and tanδ = 0.92%) and mechanical strength properties (tensile force = 1.75 kg) of the capacitors made from the new high-conductivity aluminum electrodes are comparable. Table 7 Electrode material Sintering temperature Electrode conductivity Safety Capacitor Capacitance Value Safety capacitor dissipation factor pull silver electrode 600~850°C 9x10 -6 (Ω*m) 0.36nF 0.91% 1.8kg

因此,本發明主要技術特徵如下: 1.    利用厚膜印刷鋁電極後(含硫酸銅晶體),再置放在銅溶液裡,控制溶液溫度、浸置時間來進行化學氧化還原置換成為一種空氣下燒結可以製作高導電率銅電極,此銅電極可應用製作於從低溫(70°C)熱處理到高溫(1000°C)燒結的塑膠軟板(低溫70~200°C)、玻璃基板(中溫500~600°C)、太陽能矽基板(中溫500~600°C)、及陶瓷基板(高溫850~1000°C)。 2.    將本製程應用到太陽能正背電極,可以取代目前太陽能電池正銀背鋁電極成為銅電極,不僅可以提升光電轉換效率且可以大幅降低材料成本。 3.    利用固晶膠鋁、或固晶錫化合物膏(含硫酸銅晶體),將其置放在銅溶液裡,控制溶液溫度、浸置時間來進行化學氧化還原置換成為一種空氣下燒結成為導電、高導熱銅固晶電極。 4.    將本製程應用到晶片封裝固晶可以取代目前錫、錫鉛固晶膏,可以達到無鉛環保需求與應用需高導熱的功率電子固晶封裝。 5.    將本製程應用到RFID天線製作可以達到低材料成本與低製程成本,而且製作天線特性優於目前的鋁銅貼膜天線。 6.    本發明創新高導電銅電極技術也可以應用到中溫的玻璃基板或是高溫陶瓷基板,利用厚膜印刷鋁電極,燒結在不同溫度如封裝玻璃基板或是LED陶瓷散熱基板,再浸置在銅溶液裡,控制溶液溫度、浸置時間來進行化學氧化還原置換成為一種空氣下燒結成為高導電銅固晶或是銅電極。 7.    本發明利用化學或物理覆薄膜於金屬鋁顆粒表面形成核殼結構,利用燒結升溫生成覆膜金屬與鋁合金,利用液化此合金來連結最密堆積鋁顆粒而達到超高導電率的厚膜印刷鋁電極,本創新技術遵循一般厚膜印刷燒結毋需進一步化學置換處理,即可以得到跟空氣下燒結印刷銀電極或還原氣氛下燒結銅電極導電率相當。 8.    本發明利用此無需進一步化學置換處理的高導電率厚膜鋁膏,可以印刷到各類盤狀、塊狀陶瓷元件表面電極,例如安規電容、GPS天線,熱敏電阻(NTC、 PTC)、壓敏電阻等等可以應用在表面當電極的所有元件,由於導電率與銀匹配所以元件特性與目前貴金屬銀電極相當,但材料成本可以大幅降低。 9.    積層陶瓷元件之端電極係二~三邊端電極結構,包含正面電極、背面電極與正側邊電極三邊,不同於傳統積層陶瓷電容器係五邊端電極結構,包含除了正面電極、背面電極與正側邊電極三邊,還有左右側邊兩電極。 10.  正面電極與背面電極利用網版印刷與燒結製作,正側邊電極利用低溫電鍍或化鍍(無電鍍)製程、或濺鍍製程製作。 11.  使用材料為鎳、銅或銀網版印刷導電膏製作正背兩端端電極,以化學溶液銅、鎳、銀電鍍或是化鍍製作側邊第三電極。 12.  為了增加積層陶瓷元件側邊內電極密度,在陶瓷生胚上網印積層陶瓷元件內電極,同時也網印靠近元件端邊的端電極來增加側邊電極密度,以利於後續電鍍或是化鍍化學處理。 Therefore, the main technical features of the present invention are as follows: 1. After printing aluminum electrodes with thick film (containing copper sulfate crystals), they are placed in a copper solution, and the solution temperature and immersion time are controlled for chemical redox replacement. It becomes a kind of sintering under air, which can make high-conductivity copper electrodes. This copper electrode can be used in plastic flexible boards (low temperature 70-200°C), glass substrates (medium temperature 500-600°C), solar silicon Substrate (medium temperature 500-600°C), and ceramic substrate (high temperature 850-1000°C). 2. Applying this process to the solar front and back electrodes can replace the current front silver back aluminum electrodes of solar cells as copper electrodes, which can not only improve the photoelectric conversion efficiency but also greatly reduce the material cost. 3. Use solid crystal glue aluminum, or solid crystal tin compound paste (containing copper sulfate crystals), place it in copper solution, control the solution temperature and immersion time to carry out chemical redox replacement to become a kind of air sintering to become conductive. , High thermal conductivity copper solid crystal electrode. 4. The application of this process to chip packaging can replace the current tin and tin-lead solidification paste, which can meet the requirements of lead-free environmental protection and power electronic solidification packaging that requires high thermal conductivity. 5. Applying this process to RFID antenna production can achieve low material cost and low process cost, and the antenna characteristics are better than the current aluminum-copper film antenna. 6. The innovative high-conductivity copper electrode technology of the present invention can also be applied to medium-temperature glass substrates or high-temperature ceramic substrates. Aluminum electrodes are printed with thick films, sintered at different temperatures, such as packaged glass substrates or LED ceramic heat-dissipating substrates, and then immersed. In the copper solution, the temperature of the solution and the immersion time are controlled to carry out chemical redox replacement to become a high-conductivity copper solid crystal or copper electrode by sintering under air. 7. The present invention uses a chemical or physical coating film to form a core-shell structure on the surface of metal aluminum particles, uses sintering and heating to generate coated metal and aluminum alloy, and uses liquefaction of the alloy to connect the most densely packed aluminum particles to achieve ultra-high conductivity. For film-printed aluminum electrodes, this innovative technology follows the general thick-film printing and sintering process without further chemical replacement treatment, and can obtain a conductivity comparable to that of sintered printed silver electrodes in air or sintered copper electrodes in a reducing atmosphere. 8. The present invention uses this high-conductivity thick-film aluminum paste that does not require further chemical replacement treatment, and can be printed on the surface electrodes of various disc-shaped and block-shaped ceramic components, such as safety capacitors, GPS antennas, thermistors (NTC, PTC) , varistor, etc. can be applied to all the components of the electrode on the surface. Since the conductivity is matched with silver, the component characteristics are comparable to the current precious metal silver electrodes, but the material cost can be greatly reduced. 9. The terminal electrode of the multilayer ceramic component is a two- to three-side terminal electrode structure, including a front electrode, a back electrode and a front side electrode three sides. The electrodes have three sides with the positive side electrodes, and two electrodes on the left and right sides. 10. The front and back electrodes are made by screen printing and sintering, and the front and side electrodes are made by low temperature electroplating or electroless plating (electroless plating) process, or sputtering process. 11. Use nickel, copper or silver screen printing conductive paste to make front and back end electrodes, and use chemical solution copper, nickel, silver electroplating or electroless plating to make side third electrodes. 12. In order to increase the inner electrode density on the side of the laminated ceramic element, the inner electrode of the laminated ceramic element is printed on the green ceramic embryo, and the terminal electrode near the end of the element is also screen printed to increase the density of the side electrode, so as to facilitate subsequent electroplating or chemical treatment. Plating chemical treatment.

並且,本發明與現有技術的關鍵技術特徵區別在於: 1. 可在空氣下燒結,不需要在還原氣氛下燒結,即可製作出高導電率的銅電極與銅固晶技術。 2. 可在空氣下燒結,不需要化學處理,即可製作出高導電率的鋁電極與鋁固晶技術。 3. 在低於200°C下利用本創新技術製造出的低溫高導電銅電極或是固晶特性,可以媲美目前市面利用非常昂貴奈米銀粉膏製作的低溫高導電率銀電極或是固晶。 4. 前處理覆膜金屬高導電率厚膜鋁電極可以應用在盤狀陶瓷元件、金屬板、玻璃基板,或是與低溫陶瓷生胚共燒內電極使用。 5. 積層陶瓷元件印刷與低溫電鍍、化鍍製作二~三邊端電極取代目前利用浸鍍與高溫燒附的五邊端電極。 And, the key technical feature difference between the present invention and the prior art is: 1. It can be sintered in air without sintering in a reducing atmosphere to produce copper electrodes with high conductivity and copper solidification technology. 2. It can be sintered in air without chemical treatment to produce high-conductivity aluminum electrodes and aluminum solid crystal technology. 3. The low-temperature and high-conductivity copper electrodes or solid-crystal properties produced by this innovative technology at temperatures below 200°C are comparable to the current low-temperature high-conductivity silver electrodes or solid-state silver electrodes made with very expensive nano-silver pastes on the market. . 4. Pre-treatment coated metal high-conductivity thick-film aluminum electrodes can be applied to disc-shaped ceramic components, metal plates, glass substrates, or co-fired internal electrodes with low-temperature ceramic green embryos. 5. The printing of laminated ceramic components, low-temperature electroplating, and electroless plating are used to make two to three-sided terminal electrodes to replace the current five-sided terminal electrodes that use immersion plating and high-temperature sintering.

本創新技術利用低成本鋁膏印刷燒結(含硫酸銅晶體)後再置 換成銅電極可以滿足低材料與低製程成本兩大需求,可應用商業包含以銅電極取代相關貴金屬電極產業,主要是取代目前業界量產採用的網版印刷銀電極為首要應用領域。 This innovative technology utilizes low-cost aluminum paste to print and sinter (containing copper sulfate crystals) before placement Replacing copper electrodes can meet the two major demands of low material and low process cost. The commercial application includes replacing relevant precious metal electrodes with copper electrodes, mainly replacing the screen-printed silver electrodes currently used in mass production in the industry as the primary application area.

1. 綠能產業 (a) 太陽能正背電極:應用矽基太陽能電池的正面與反面電極,以網版印刷銅電極的銅膏取代目前太陽能網版印刷正銀電極與背銀電極的銀膏,一般平均製作銅電極的銅膏成本是製作銀電極的銀膏的十分之一,而且本創新銅電極製程也可製作超細線(<30 μm),來提升太陽能電池效率。 (b) LED散熱陶瓷基板電極:應用於LED散熱陶瓷基板(Al 2O 3、AlN)的金屬導線,以簡易厚膜工程的網版印刷銅電極取代利用目前應用薄膜工程真空濺鍍、黃光與電鍍製程的複雜製程技術,製造成本因製程簡化而可大幅下降。 1. Green energy industry (a) Solar front and back electrodes: the front and back electrodes of silicon-based solar cells are applied, and the copper paste of screen-printed copper electrodes is used to replace the current silver paste of solar screen-printed front and back silver electrodes. Generally, the average cost of copper paste for making copper electrodes is one tenth of that for making silver electrodes, and this innovative copper electrode manufacturing process can also make ultra-fine wires (<30 μm) to improve solar cell efficiency. (b) LED heat-dissipating ceramic substrate electrodes: metal wires applied to LED heat-dissipating ceramic substrates (Al 2 O 3 , AlN) are replaced by screen-printed copper electrodes for simple thick-film projects using vacuum sputtering, yellow light Compared with the complex process technology of the electroplating process, the manufacturing cost can be greatly reduced due to the simplification of the process.

2. 通訊產業 (a)平面電感電極:取代觸控面版低溫銀電極或是真空濺鍍電鍍銅電極。 (b)低溫陶瓷共燒元件或模組電極:應用於輕薄短小型積層陶瓷通訊被動元件使用之金屬電極,以印刷、曝光、蝕刻製作高高寬比金屬銅電極平面電感器取代目前利用銀膏當內電極之積層陶瓷電感器,不管在金屬材料成本或是製程成本皆可大幅下降。 (c)觸控面板電極:可應用於陶瓷基版或是陶瓷生胚,利用其可製作細線能力,與積層陶瓷製程,開發超小型通訊模組,符合手攜式通訊產品短小輕薄技術需求。 2. Communication industry (a) Planar inductor electrode: replace the low temperature silver electrode of the touch panel or the electroplated copper electrode by vacuum sputtering. (b) Low-temperature ceramic co-fired components or module electrodes: applied to metal electrodes used in light, thin, short and small laminated ceramic communication passive components, and high aspect ratio metal copper electrode planar inductors are produced by printing, exposure, and etching to replace the current use of silver paste. When the inner electrode of the multilayer ceramic inductor is used, both the metal material cost and the process cost can be greatly reduced. (c) Touch panel electrodes: It can be applied to ceramic substrates or ceramic green embryos. It can be used to make thin wires, and the multilayer ceramic process can be used to develop ultra-small communication modules, which meet the technical requirements of short, light and thin portable communication products.

3. 半導體封裝產業 可應用封裝產業的導線、接墊(Pad)與固晶,特別是功率電子封裝需要高導熱的功能。 3. Semiconductor packaging industry It can be applied to wires, pads and die-bonding in the packaging industry, especially power electronic packaging that requires high thermal conductivity.

4. 被動元件產業 (a)積層陶瓷電容器:利用本創新電鍍或是化鍍銅或是鎳電極技術可以製作積層陶瓷電容器端電極,並可以利用銅或是鎳置換化鍍技術,或是直接電鍍或是直接化鍍銅、鎳將積層陶瓷電容器邊界的側邊端電極製作成銅或是鎳側邊端電極。 本發明之積層陶瓷電容器利用鎳內電極化學濕式處理引導出銅或是鎳側邊端電極。 (b)晶片電阻:本創新技術可以製作超低電阻銅鎳、銅錳鎳與鎳鉻矽合金。 (c)電感器:本創新技術可以製作以空氣下燒出銅電極的薄膜電感器與晶片 電感三邊銅端電極。 (d)低溫共燒陶瓷(Low Temperature Co-fired Ceramic, LTCC)元件:本創新 技術可以製作以空氣下燒出銅電極的低溫共燒陶瓷元件表面銅電極與三邊銅端電極。 4. Passive component industry (a) Multilayer ceramic capacitors: Using this innovative electroplating or electroless copper or nickel electrode technology, the terminal electrodes of laminated ceramic capacitors can be made, and copper or nickel substitution electroless plating technology, or direct electroplating or direct electroless plating can be used. Copper and Nickel The side terminal electrodes of the multilayer ceramic capacitor are made of copper or nickel side terminal electrodes. The multilayer ceramic capacitor of the present invention utilizes nickel inner electrode chemical wet treatment to lead out copper or nickel side terminal electrodes. (b) Chip resistance: This innovative technology can produce ultra-low resistance copper-nickel, copper-manganese-nickel and nickel-chromium-silicon alloys. (c) Inductors: This innovative technology can produce thin film inductors and chips with copper electrodes fired under air The three-sided copper terminal electrode of the inductor. (d) Low Temperature Co-fired Ceramic (LTCC) element: this innovation The technology can produce surface copper electrodes and three-sided copper terminal electrodes of low-temperature co-fired ceramic components that burn copper electrodes under air.

綜上所述,本發明係一種高導電率導線與合金材料製作方法與 積層陶瓷元件創新三邊形狀端電極的製作方法,可有效改善習用之種種缺點,提出使用卑金屬鋁材料與空氣中燒結製作出的高導電率電極製程,可以滿足低材料與低製程成本兩大需求,並可應用於各類基板,包含塑膠軟板(低溫)、玻璃基板(中溫)、太陽能矽基板(中溫)及陶瓷基板(高溫),所提兩種創新材料方法可以改善厚膜鋁電極的導電率與厚膜印刷銀電極或是還原氣氛下燒結的銅電極導電率相當或是接近,所提積層陶瓷元件三邊新形狀低溫端電極製程作法,可以改善目前積層陶瓷元件利用浸鍍與高溫還原氣氛燒結五邊端電極的產品品質與高材料製程成本的問題,進而使本發明之產生能更進步、更實用、更符合使用者之所須,確已符合發明專利申請之要件,爰依法提出專利申請。 To sum up, the present invention relates to a method for making a high-conductivity wire and an alloy material and the The innovative trilateral shape terminal electrode manufacturing method for multilayer ceramic components can effectively improve the conventional shortcomings. A high-conductivity electrode manufacturing process using base metal aluminum material and sintering in air is proposed, which can meet the requirements of low material and low process cost. It can be applied to various substrates, including plastic flexible boards (low temperature), glass substrates (medium temperature), solar silicon substrates (medium temperature) and ceramic substrates (high temperature). The proposed two innovative material methods can improve thick film The conductivity of the aluminum electrode is comparable or close to that of the thick-film printed silver electrode or the copper electrode sintered in a reducing atmosphere. The problems of product quality and high material process cost of pentagon electrode plating and high temperature reducing atmosphere sintering make the invention more advanced, more practical, and more in line with the needs of users, which has indeed met the requirements of the invention patent application , to file a patent application in accordance with the law.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限 定本發明實施之範圍;故,凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾,皆應仍屬本發明專利涵蓋之範圍內。 However, the above descriptions are only preferred embodiments of the present invention, and should not be limited to this Therefore, any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the contents of the description of the invention should still fall within the scope covered by the patent of the present invention.

(本發明部分) 11:鋁顆粒 12:金屬溶液 13:銅顆粒 21:厚膜鋁層 22:金屬溶液 23:厚膜銅層 24:厚膜鎳層 25:厚膜銅鎳合金層 31:鋁顆粒 32:金屬膜 33:鋁殼金屬合金 41:鎳內電極 42:引導銅電極 43:銅端電極 (習用部分) 1:內電極 2:陶瓷體 3:端電極 4:正面端電極 5:背面端電極 6:側邊端電極 (Part of the present invention) 11: Aluminum particles 12: Metal solution 13: Copper particles 21: Thick film aluminum layer 22: Metal solution 23: Thick film copper layer 24: thick film nickel layer 25: Thick film copper-nickel alloy layer 31: Aluminum particles 32: Metal film 33: Aluminum shell metal alloy 41: Nickel inner electrode 42: Guide copper electrodes 43: Copper terminal electrode (habitual part) 1: Internal electrode 2: Ceramic body 3: Terminal electrode 4: Front end electrode 5: Back end electrode 6: Side electrode

第1圖,係本發明之氧化還原反應銅顆粒置換鋁顆粒與銅厚膜置換鋁厚膜示 意圖。 第2圖,係本發明利用金屬之氧化還原反應進行置換示意圖。 第3圖,係本發明的高導電率銅電極應用在各種不同基板之正面與背面示意圖。 第4圖,係本發明利用大小尺寸覆膜金屬鋁顆粒來達到厚膜鋁電極之最緻密 堆積排列示意圖。 第5圖,係本發明之積層陶瓷電容器二~三邊端電極與習用之積層陶瓷電容 器五邊端電極結構比較示意圖。 第6圖,係本發明之積層陶瓷電容器二~三邊端電極增加側邊內電極密度示 意圖。 第7圖,係本發明之積層陶瓷電感器二~三邊端電極增加側邊內電極密度示 意圖。 第8圖,係本發明之低溫陶瓷共燒LTCC濾波器二~三邊端電極增加側邊內電極密度示意圖。 第9A圖,係本發明將雙面太陽能之背鋁電極轉換成高導電率銅電極示意圖。 第9B圖,係本發明將雙面太陽能之背鋁電極轉換成高導電率銅電極後使太 陽能電池光電轉換效率提升示意圖。 第10圖,係本發明的低溫銅固晶與目前市面的奈米銀固晶的附著力測試結 果示意圖。 第11圖,係本發明之積層陶瓷電容器二~三邊端電極之製作流程示意圖。 第12圖,係本發明以低溫鋁膏製作積層陶瓷元件端電極後再經由硫酸銅置 換成銅端電極成果圖。 第13圖,係本發明之利用積層陶瓷電容器側邊端電極電鍍(化鍍)製作示意 圖。 第14圖,係本發明之積層陶瓷電容器利用側邊密集鎳內電極以濕式化學處 理引導出鎳側端電極結構成果圖。 第15圖,係本發明之積層陶瓷電容器二~三邊端電極成果圖。 第16A圖,係本發明厚膜印刷銀包鋁金屬膏在不同溫度燒結之導電率示意圖。 第16B圖,係本發明隨著燒結溫度升高生成Ag 2Al之XRD圖。 第16C圖,係本發明銀包鋁金屬膏在不同溫度下燒結之顯微結構的SEM圖。 第17圖,係習用五邊端積層陶瓷電容器與習用三邊端晶片電阻器結構示意圖。 第18圖,係習用積層陶瓷電容器五邊端電極之製作流程示意圖。 第19圖,係習用五邊端積層陶瓷電容器與習用三邊端晶片電阻器實際樣品 示意圖。 Fig. 1 is a schematic diagram of the redox reaction of copper particles replacing aluminum particles and copper thick film replacing aluminum thick film of the present invention. Figure 2 is a schematic diagram of the present invention utilizing the redox reaction of metals to perform replacement. Figure 3 is a schematic diagram of the front and back of the high-conductivity copper electrode of the present invention applied to various substrates. Fig. 4 is a schematic diagram of the present invention using large and small coated metal aluminum particles to achieve the most densely packed arrangement of thick film aluminum electrodes. Figure 5 is a schematic diagram showing the comparison of the structures of the two-to-three-side terminal electrodes of the multilayer ceramic capacitor of the present invention and the conventional five-side terminal electrodes of the multilayer ceramic capacitor. Fig. 6 is a schematic diagram of the increase of the density of the inner electrodes on the side of the two to three side end electrodes of the multilayer ceramic capacitor of the present invention. Fig. 7 is a schematic diagram of the increase of the density of the inner electrodes on the side of the two to three side end electrodes of the multilayer ceramic inductor of the present invention. Figure 8 is a schematic diagram of the increase of the density of the inner electrodes on the side of the two to three side end electrodes of the low temperature ceramic co-fired LTCC filter of the present invention. Figure 9A is a schematic diagram of the present invention converting the back aluminum electrode of the double-sided solar energy into a high-conductivity copper electrode. Fig. 9B is a schematic diagram of improving the photoelectric conversion efficiency of the solar cell after converting the back aluminum electrode of the double-sided solar energy into a high-conductivity copper electrode according to the present invention. Figure 10 is a schematic diagram of the adhesion test results between the low-temperature copper solidification of the present invention and the nanosilver solidification currently on the market. Fig. 11 is a schematic diagram of the manufacturing process of the two- to three-side terminal electrodes of the multilayer ceramic capacitor of the present invention. Fig. 12 shows the result of the present invention using low-temperature aluminum paste to fabricate the terminal electrode of the laminated ceramic element, and then replacing it with copper sulfate into the copper terminal electrode. Figure 13 is a schematic diagram of the present invention using electroplating (electroless plating) of the side electrodes of the multilayer ceramic capacitor. Fig. 14 is the result of the structure of the multilayer ceramic capacitor of the present invention, which uses the dense nickel inner electrode on the side to lead out the nickel side terminal electrode by wet chemical treatment. Fig. 15 is the result of the two-to-three-side terminal electrodes of the multilayer ceramic capacitor of the present invention. Figure 16A is a schematic diagram of the electrical conductivity of the thick-film printing silver-coated aluminum metal paste of the present invention sintered at different temperatures. Figure 16B is the XRD pattern of Ag 2 Al formed in the present invention as the sintering temperature increases. Figure 16C is a SEM image of the microstructure of the silver-coated aluminum metal paste of the present invention sintered at different temperatures. Fig. 17 is a schematic diagram of the structure of the conventional five-side terminal multilayer ceramic capacitor and the conventional three-side terminal chip resistor. Figure 18 is a schematic diagram of the manufacturing process of the conventional MLCC's penta-terminal electrodes. Figure 19 is a schematic diagram of the actual sample of the conventional five-side terminal multilayer ceramic capacitor and the conventional three-side terminal chip resistor.

31:鋁顆粒 31: Aluminum particles

32:金屬膜 32: Metal film

33:鋁殼金屬合金 33: Aluminum shell metal alloy

Claims (12)

一種高導電率導線、合金與新形狀端電極製作方法,係在數個金屬鋁顆粒表面以化學或物理方式覆膜一層薄的金屬薄膜,形成核鋁殼金屬結構,利用燒結升溫使該殼金屬與該核鋁的外部形成一鋁殼金屬合金,再升溫至300~660°C超過此鋁殼金屬合金熔點的燒結溫度,利用液化該鋁殼金屬合金來連結周圍最緻密堆積排列之金屬鋁顆粒,即可製作出高導電率厚膜鋁電極之高導電率厚膜鋁膏。A method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes, which is to coat a thin metal film on the surface of several metal aluminum particles by chemical or physical methods to form a core-aluminum-shell metal structure, and use sintering and heating to make the shell metal An aluminum shell metal alloy is formed with the outside of the core aluminum, and then the temperature is raised to a sintering temperature of 300-660°C exceeding the melting point of the aluminum shell metal alloy, and the aluminum shell metal alloy is liquefied to connect the most densely packed surrounding metal aluminum particles. , you can make high-conductivity thick-film aluminum paste for high-conductivity thick-film aluminum electrodes. 依申請專利範圍第1項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該覆膜之金屬薄膜為銀金屬薄膜,而該鋁殼金屬合金為鋁銀合金(Ag 2Al)。 According to the method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes as described in item 1 of the scope of the patent application, the metal film of the coating is a silver metal film, and the metal alloy of the aluminum shell is an aluminum-silver alloy (Ag 2 Al). 依申請專利範圍第1項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該些金屬鋁顆粒係以大小粒徑5 μm與2 μm最緻密堆積之形式排列。According to the method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes as described in item 1 of the scope of the patent application, the metal aluminum particles are arranged in the form of the most densely packed with particle sizes of 5 μm and 2 μm. 依申請專利範圍第1項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該高導電率厚膜鋁膏可印刷至安規電容、GPS天線,熱敏電阻(NTC、PTC)、壓敏電阻或可應用在表面當電極的所有元件。According to the method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes as described in item 1 of the scope of the patent application, the high-conductivity thick-film aluminum paste can be printed on safety capacitors, GPS antennas, thermistors (NTC, PTC, etc.) ), varistor or all components that can be applied as electrodes on the surface. 依申請專利範圍第1項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該高導電率厚膜鋁電極適用於盤狀陶瓷元件、金屬板、玻璃基板,或是與低溫陶瓷生胚共燒內電極使用。According to the method for manufacturing high-conductivity wires, alloys, and new-shaped terminal electrodes as described in item 1 of the scope of the patent application, the high-conductivity thick-film aluminum electrodes are suitable for use in disc-shaped ceramic components, metal plates, glass substrates, or other Low temperature ceramic green embryo co-firing inner electrode is used. 一種高導電率導線、合金與新形狀端電極製作方法,係利用厚膜印刷一高氧化電位的厚膜鋁層後,再置放在一低氧化電位的金屬溶液中,控制溶液溫度與浸置時間以進行化學氧化還原置換反應成為低氧化電位的厚膜金屬層。A method for making high-conductivity wires, alloys and new-shaped terminal electrodes. After printing a thick-film aluminum layer with a high oxidation potential using a thick film, it is placed in a metal solution with a low oxidation potential, and the solution temperature and immersion are controlled. time to undergo chemical redox displacement reactions into thick film metal layers with low oxidation potential. 依申請專利範圍第6項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該金屬溶液為硫酸銅、硫酸鎳、硫酸錳、硫酸鉻、矽化合物或其組合。According to the method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes as described in item 6 of the claimed scope, the metal solution is copper sulfate, nickel sulfate, manganese sulfate, chromium sulfate, silicon compound or a combination thereof. 依申請專利範圍第6項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該厚膜金屬層為厚膜銅層、厚膜鎳層、厚膜銅鎳合金層、厚膜銅錳鎳合金層、或厚膜鎳鉻矽合金層。According to the method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes as described in item 6 of the patent application scope, the thick-film metal layer is a thick-film copper layer, a thick-film nickel layer, a thick-film copper-nickel alloy layer, a thick-film copper-nickel alloy layer, a thick-film Thin-film copper-manganese-nickel alloy layer, or thick-film nickel-chromium-silicon alloy layer. 依申請專利範圍第6項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該厚膜金屬層為空氣下燒結成為高導電率的銅電極或銅固晶電極。According to the method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes as described in item 6 of the scope of the patent application, the thick-film metal layer is sintered in air to become high-conductivity copper electrodes or copper solid-state electrodes. 依申請專利範圍第9項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該銅電極應用製作於從低溫熱處理到高溫燒結的塑膠軟板、玻璃基板、太陽能矽基板與陶瓷基板,以及製作積層陶瓷電容器新形狀端電極,於其中該塑膠軟板處理溫度為低溫70~200°C,該玻璃基板處理溫度為中溫500~600°C,該太陽能矽基板處理溫度為中溫500~600°C,該陶瓷基板處理溫度為高溫850~1000°C。According to the method for manufacturing high-conductivity wires, alloys, and new-shaped terminal electrodes as described in item 9 of the scope of the patent application, the copper electrodes are used in the manufacture of plastic flexible boards, glass substrates, solar silicon substrates and other materials ranging from low-temperature heat treatment to high-temperature sintering. A ceramic substrate and a new shape terminal electrode for making a multilayer ceramic capacitor, wherein the processing temperature of the plastic soft board is a low temperature of 70-200°C, the processing temperature of the glass substrate is a medium temperature of 500-600°C, and the processing temperature of the solar silicon substrate is The medium temperature is 500-600°C, and the processing temperature of the ceramic substrate is a high temperature of 850-1000°C. 依申請專利範圍第10項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該積層陶瓷電容器新形狀端電極係利用銅或鎳置換化鍍製作積層陶瓷電容器的銅或鎳的側端電極,該積層陶瓷電容器低溫側端電極製程加上在內電極的印刷製作上下端電極,能製作出積層陶瓷電容器三邊新形狀端電極。The method for manufacturing high-conductivity wires, alloys, and new-shaped terminal electrodes according to item 10 of the scope of the patent application, wherein the new-shaped terminal electrodes of the multilayer ceramic capacitor use copper or nickel to replace the copper or nickel of the multilayer ceramic capacitor by electroless plating. The side terminal electrodes of the multilayer ceramic capacitor, the low temperature side terminal electrode manufacturing process of the multilayer ceramic capacitor plus the printing of the inner electrodes to make the upper and lower terminal electrodes, can produce the three-sided new shape terminal electrodes of the multilayer ceramic capacitor. 依申請專利範圍第11項所述之高導電率導線、合金與新形狀端電極製作方法,其中,該積層陶瓷電容器側端電極藉由常規化鍍、電鍍與濺鍍方式製作積層陶瓷電容器的銅或鎳的側端電極。The method for manufacturing high-conductivity wires, alloys and new-shaped terminal electrodes according to claim 11, wherein the side terminal electrodes of the multilayer ceramic capacitor are fabricated by conventional electroplating, electroplating, and sputtering methods to make the copper of the multilayer ceramic capacitor. or nickel side electrodes.
TW110118633A 2020-09-21 2021-05-24 Conducting wire with high conductivity, alloy and manufacturing method of new-shape terminal electrode for converting the thick-film aluminum electrode into a thick-film metal or alloy electrode with high conductivity by chemical redox conversion TW202213391A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024124468A1 (en) * 2022-12-15 2024-06-20 李文熙 Method for manufacturing multilayer solid aluminum capacitor and zero ohmic aluminum resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024124468A1 (en) * 2022-12-15 2024-06-20 李文熙 Method for manufacturing multilayer solid aluminum capacitor and zero ohmic aluminum resistor

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