CN113539594B - Low-resistance negative temperature coefficient thermistor and manufacturing process thereof - Google Patents
Low-resistance negative temperature coefficient thermistor and manufacturing process thereof Download PDFInfo
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- CN113539594B CN113539594B CN202110679479.6A CN202110679479A CN113539594B CN 113539594 B CN113539594 B CN 113539594B CN 202110679479 A CN202110679479 A CN 202110679479A CN 113539594 B CN113539594 B CN 113539594B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
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Abstract
The invention provides a low-resistance negative temperature coefficient thermistor and a manufacturing process thereof, and relates to the technical field of resistors. The manufacturing process of the thermistor comprises the working procedures of forming a back electrode, a first front electrode, a first resistance layer, a second front electrode and the like on a substrate. And a second resistance layer is additionally arranged, a second front electrode is arranged on the second resistance layer, the second front electrode partially covers the second resistance layer, and the resistance value of the negative temperature coefficient thermistor is regulated and controlled by designing the graphic size of the second front electrode. Through the process, the negative temperature coefficient thermistor with the resistance value ranging from 1 omega to 1K omega can be obtained, and the application range of the printing type thermistor is greatly expanded. And the manufacturing process is simple, easy to implement and capable of realizing large-scale production.
Description
Technical Field
The invention relates to the technical field of resistors, in particular to a low-resistance negative temperature coefficient thermistor and a manufacturing process thereof.
Background
Currently, Negative Temperature Coefficient (NTC) thermistors are a type of thermistor in which the resistance value decreases with increasing temperature. The negative temperature coefficient thermistor is used for temperature measurement, temperature control, temperature compensation, overheating protection and the like, and is widely applied to electronic products such as mobile phones, computers, liquid crystal displays, lithium ion rechargeable batteries, fax machines, copiers, automotive circuits, quartz oscillation, transistor amplification circuits, instrument coils, integrated circuit modules, thermoelectric equipment and the like.
With the development of miniaturization and precision of electronic products, the existing monolithic NTCs and multi-layer ceramic laminated NTCs cannot meet the user requirements. At present, the printed negative temperature coefficient resistor gradually becomes a mainstream product due to the advantages of small volume, light weight and the like. However, at present, the resistance value of the printed negative temperature coefficient resistor is limited, and the resistance value is generally more than 1K Ω, so that the use requirement of the market on the low-resistance negative temperature coefficient thermistor cannot be met.
Disclosure of Invention
In order to solve the technical problem, the invention provides a low-resistance negative temperature coefficient thermistor and a manufacturing process thereof.
The technical problem to be solved by the invention is realized by adopting the following technical scheme.
The invention provides a manufacturing process of a low-resistance negative temperature coefficient thermistor, which comprises the following steps:
s1: printing an electrode material on the back of a substrate, and sintering to form a back electrode, wherein the substrate is provided with a plurality of particle folding units, and the back electrode is respectively arranged on two opposite sides of each particle folding unit at intervals;
s2: printing an electrode material on the front surface of the substrate, and then sintering to form a first front surface electrode, wherein the first front surface electrode comprises a left electrode and a right electrode which are arranged on two opposite sides at intervals on each particle folding unit;
s3: printing a resistance material in the middle of the first front electrode, and then sintering to form a first resistance layer, wherein one end of the first resistance layer extends to the end part overlapping the left electrode, and the other end of the first resistance layer is separated from the right electrode gap;
s4: printing resistance materials on the first resistance layer again, and then sintering to form a second resistance layer, wherein the second resistance layer completely covers the first resistance layer;
s5: printing an electrode material on the second resistance layer, and then sintering to form a second front electrode, wherein the second front electrode partially covers the second resistance layer and extends to cover the right electrode;
s6: printing an insulating material on the second front electrode, and then sintering to form a protective layer, wherein the protective layer completely covers and is welded to the first resistance layer, and two ends of the protective layer respectively extend to cover a part of the left electrode and a part of the second front electrode;
s7: sintering the product obtained in the step S6;
s8: performing a first separation operation on the product obtained by sintering at S7 to obtain a plurality of strip-shaped semi-finished products, performing vacuum sputtering on the side surfaces of the strip-shaped semi-finished products to form side electrodes, wherein the side electrode on the left side extends towards both ends to connect the left electrode and the back electrode, and the side electrode on the right side extends towards both ends to connect the right electrode and the back electrode, or connect the second front electrode and the back electrode;
s9: and (4) carrying out second separation operation on the product obtained in the step (S8) to obtain a plurality of granular semi-finished products, wherein each granular semi-finished product corresponds to one grain folding unit, and carrying out electroplating treatment on the granular semi-finished products to obtain the low-resistance negative temperature coefficient thermistor.
Further, in a preferred embodiment of the present invention, the substrate is a ceramic substrate.
Further, in the preferred embodiment of the present invention, the length of the left electrode is greater than the length of the right electrode.
Further, in the preferred embodiment of the present invention, the sintering temperature is 800-900 ℃ in the steps S1-S5.
Further, in the preferred embodiment of the present invention, the sintering time is 6-15 min in the steps S1-S5.
Further, in the preferred embodiment of the present invention, in step S7, the sintering process includes: and (4) standing the product obtained in the step S6 at normal temperature for 4-8 hours, and sintering at 220-280 ℃.
Further, in the preferred embodiment of the present invention, in step S6, the protective layer is prepared according to the following steps: printing a first insulating material on the second front electrode to obtain a first insulating layer, drying, printing a second insulating material to obtain a second insulating layer, and sintering to form the protective layer.
Further, in a preferred embodiment of the present invention, the first insulating material is glass paste, and the second insulating material is epoxy paste.
Further, in the preferred embodiment of the present invention, before step S1, a plurality of folding lines along a first direction and a plurality of folding lines along a second direction are uniformly formed on the upper surface and the lower surface of the substrate in advance, the first direction and the second direction are substantially perpendicular, the folding lines and the folding lines intersect to form a grid, and each grid forms one folding unit.
The invention also provides a low-resistance negative temperature coefficient thermistor which is prepared by the manufacturing process. The resistance value R of the low-resistance negative temperature coefficient thermistor is as follows: r is more than or equal to 1 omega and less than 1K omega.
The low-resistance negative temperature coefficient thermistor and the manufacturing process thereof have the beneficial effects that:
according to the thermistor obtained by the manufacturing process, the resistance value R is smaller as the cross-sectional area S of the resistor is larger under the condition that the length L of the resistance layer is kept unchanged according to the resistance law that rho L/S is equal to R. The second resistance layer is additionally arranged, so that the cross-sectional area of the resistor is improved, and the resistance is reduced. And a second front electrode is arranged on the second resistance layer, the second front electrode partially covers the second resistance layer, and the resistance value of the negative temperature coefficient thermistor is regulated and controlled by designing the pattern size of the second front electrode. The larger the contact surface between the second front electrode and the second resistance layer is, the smaller the resistance value of the product is. Through the process, the negative temperature coefficient thermistor with the resistance value ranging from 1 omega to 1K omega can be obtained, and the application range of the printing type thermistor is greatly expanded. And the manufacturing process is simple, easy to implement and capable of realizing large-scale production.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram of a low resistance NTC thermistor according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the present invention after step S0;
FIG. 3 is a schematic structural diagram of the present invention after step S1;
FIG. 4 is a schematic structural diagram of the present invention after step S2;
FIG. 5 is a schematic structural diagram of the present invention after step S4;
FIG. 6 is a schematic structural diagram of the present invention after step S5;
FIG. 7 is a schematic structural diagram of the present invention after step S6;
FIG. 8 is a schematic structural diagram of the present invention after step S8;
FIG. 9 is a schematic view of the structure after nickel plating layer formation;
fig. 10 is a schematic view of the structure after tin plating is formed.
Icon: 1-a substrate; 101-upper surface; 102-lower surface; 11-folding line; 12-broken grain line; 2-a back electrode; 3-a first front electrode; 31-left electrode; 32-right electrode; 4-a resistive layer; 5-a second front electrode; 7-a protective layer; 8-nickel plating; 9-tin coating.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The low-resistance ntc thermistor and the manufacturing process thereof according to the embodiments of the present invention will be described in detail below.
The embodiment of the invention provides a manufacturing process of a low-resistance negative temperature coefficient thermistor, which comprises the following steps:
s0: the substrate 1 is obtained, as shown in fig. 2, a plurality of folding lines 11 extending along a first direction and a plurality of folding lines 12 extending along a second direction are uniformly formed on an upper surface 101 and a lower surface 102 of the substrate 1 in advance, the first direction and the second direction are approximately perpendicular, the folding lines 11 and the folding lines 12 intersect to form a grid, and each grid forms a folding unit 10. Preferably, in the present embodiment, the first direction is a width direction of the substrate 1, and the second direction is a length direction of the substrate 1. Specifically, in the present embodiment, the substrate 1 is a ceramic substrate.
S1: as shown in fig. 3, an electrode material is printed on a lower surface 102 of a substrate 1, and then sintered to form a back electrode 2, wherein the substrate 1 has a plurality of grain folding units 10, and on each grain folding unit 10, the back electrode 2 is respectively arranged at intervals on two opposite sides of the grain folding unit 10.
Preferably, in the step, the sintering temperature is 800-900 ℃, more preferably 855-860 ℃, and the sintering time is 6-15 min.
Preferably, in this step, the electrode material is a silver-containing conductive paste.
S2: as shown in fig. 4, an electrode material is printed on the upper surface 101 of the substrate 1, and then sintered to form the first front electrode 2, wherein, on each of the grain folding units 10, the first front electrode 3 includes a left electrode 31 and a right electrode 32 disposed at an interval on opposite sides. The left electrode 31 is longer than the right electrode 3, which facilitates the printing of the resistive layer 4 and avoids the right end of the resistive layer 4 overlapping the right electrode 32.
Preferably, in the step, the sintering temperature is 800-900 ℃, more preferably 855-860 ℃, and the sintering time is 6-15 min.
Preferably, in this step, the electrode material is a silver-containing conductive paste.
S3: as shown in fig. 5, a resistive material is printed in the middle of the first front electrode 3 and then sintered to form a first resistive layer, one end of which extends to an end contacting the left electrode 31 and the other end of which is spaced apart from the right electrode 32 by a gap. The sintering temperature is 800-900 ℃. The sintering time is 6-15 min.
Preferably, in the step, the sintering temperature is 800-900 ℃, more preferably 855-860 ℃, and the sintering time is 6-15 min.
Preferably, in this step, the resistive material may be, for example, a commercially available semiconductor material containing a metal oxide.
S4: the resistive material is again printed on the first resistive layer 41 and then sintered to form a second resistive layer, which completely covers the first resistive layer. Preferably, in the step, the sintering temperature is 800-900 ℃, more preferably 855-860 ℃, and the sintering time is 6-15 min. The first resistive layer and the second resistive layer are fused to form the resistive layer 4. By printing two layers of resistors, the cross-sectional area of the resistive layer 4 is increased and the resistance is reduced.
S5: as shown in fig. 6, an electrode material is printed on the second resistance layer, and then sintered to form the second front electrode 5, wherein the second front electrode 5 partially covers the second resistance layer and extends to cover the right electrode 32. The larger the contact surface of the second front electrode 5 with the resistive layer 4 is, the smaller the resistance value is. The resistance of the product is regulated and controlled by regulating and controlling the pattern size of the second front electrode 5.
Preferably, in the step, the sintering temperature is 800-900 ℃, more preferably 855-860 ℃, and the sintering time is 6-15 min.
Further, the second front electrode 5 completely covers the right electrode 32.
S6: as shown in fig. 7, an insulating material is printed on the second front electrode 5, and then sintered to form a protective layer 6, wherein the protective layer 6 completely covers and is welded to the resistive layer 4, and both ends extend to cover the left electrode 31 and a portion of the second front electrode 5, respectively. The protective layer 6 is prepared by the following steps: the first insulating material is printed on the second front surface electrode to obtain a first insulating layer, after drying, the second insulating material is printed to obtain a second insulating layer, and then, the second insulating layer is sintered to form the protective layer 6. Specifically, in this embodiment, the first insulating material is glass paste, and the second insulating material is epoxy paste. The arrangement enables the protective layer 6 to completely cover the resistance layer 4, and the two protective layers made of different materials have good protective effect on the resistance layer, so that the service life of the product is prolonged.
Preferably, in the step, the sintering temperature is 800-900 ℃, more preferably 855-860 ℃, and the sintering time is 6-15 min.
S7: and (4) sintering the product obtained in the step (S6). Specifically, the product obtained in S6 is placed at normal temperature for 4-8 hours and then sintered at 220-280 ℃.
S8: as shown in fig. 8, the product obtained by sintering at S7 is subjected to a first separation operation to obtain a plurality of bar-shaped semi-finished products, and the side surfaces of the bar-shaped semi-finished products are subjected to vacuum sputtering to form the side electrodes 7, the side electrode 7 on the left side extends toward both ends to connect the left electrode 31 and the back electrode 2, and the side electrode 7 on the right side extends toward both ends to connect the right electrode 32 and the back electrode 2, or to connect the second front electrode 5 and the back electrode 2.
Specifically, in this step, the first separation operation is a folding operation, that is, the substrate 1 is folded into a strip-shaped semi-finished product according to the position of the folding line 11. Specifically, when the second front electrode 5 completely covers the right electrode 32, the side electrodes 7 extend to both ends to connect the second front electrode 5 and the back electrode 2. When the second front electrode 5 covers only a part of the right electrode 32, the side electrode 7 extends toward both ends to connect the right electrode 32 and the rear electrode 2.
Further, to protect the thermistor better, both ends of the side electrodes 7 are extended to the edge of the contact protection layer 6 so that the surfaces of the front and rear electrodes are completely covered.
S9: and (4) carrying out second separation operation on the product obtained in the step (S8) to obtain a plurality of granular semi-finished products, wherein each granular semi-finished product corresponds to one granulation unit 10, and carrying out electroplating treatment on the granular semi-finished products to obtain the low-resistance negative temperature coefficient thermistor.
Specifically, in this step, the second separation operation is a grain folding operation, that is, the strip-shaped semi-finished product is folded into a granular semi-finished product according to the position of the grain folding line 12.
Further, the plating layer completely covers the side electrode 7 on the corresponding side. Specifically, as shown in fig. 9 and 10, the plating layer includes a nickel plating layer 8 and a tin plating layer 9 provided from the inside to the outside. Nickel plating layer 8 is used to form protection for the resistor, and nickel plating layer 9 is used to make the resistor have good solderability.
The embodiment also provides a low-resistance negative temperature coefficient thermistor which is manufactured by the manufacturing process. The resistance value R of the low-resistance negative temperature coefficient thermistor is as follows: r is more than or equal to 1 omega and less than 1K omega. As shown in fig. 1, the low-resistance negative temperature coefficient thermistor includes a substrate 1, a pair of back electrodes 2, a first front electrode 3, a resistive layer 4, a second front electrode 5, a protective layer 6, side electrodes 7, a nickel plating layer 8, and a tin plating layer 9.
The embodiments described above are some, but not all embodiments of the invention. The detailed description of the embodiments of the present invention is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (10)
1. A manufacturing process of a low-resistance negative temperature coefficient thermistor is characterized by comprising the following steps:
s1: printing an electrode material on the lower surface of a substrate, and sintering to form a back electrode, wherein the substrate is provided with a plurality of particle folding units, and the back electrode is respectively arranged on two opposite sides of each particle folding unit at intervals;
s2: printing an electrode material on the upper surface of the substrate, and then sintering to form a first front electrode, wherein the first front electrode comprises a left electrode and a right electrode which are arranged on two opposite sides at intervals on each grain folding unit;
s3: printing a resistance material in the middle of the first front electrode, and then sintering to form a first resistance layer, wherein one end of the first resistance layer extends to the end part overlapping the left electrode, and the other end of the first resistance layer is separated from the right electrode gap;
s4: printing resistance materials on the first resistance layer again, and then sintering to form a second resistance layer, wherein the second resistance layer completely covers the first resistance layer;
s5: printing an electrode material on the second resistance layer, and then sintering to form a second front electrode, wherein the second front electrode partially covers the second resistance layer and extends to cover the right electrode;
s6: printing an insulating material on the second front electrode, and then sintering to form a protective layer, wherein the protective layer completely covers and is welded on the first resistance layer, and two ends of the protective layer respectively extend to cover the left electrode and one part of the second front electrode;
s7: sintering the product obtained in the step S6;
s8: performing a first separation operation on the product obtained by sintering at S7 to obtain a plurality of strip-shaped semi-finished products, performing vacuum sputtering on the side surfaces of the strip-shaped semi-finished products to form side electrodes, wherein the side electrode on the left side extends towards both ends to connect the left electrode and the back electrode, and the side electrode on the right side extends towards both ends to connect the right electrode and the back electrode, or connect the second front electrode and the back electrode;
s9: and (4) carrying out second separation operation on the product obtained in the step (S8) to obtain a plurality of granular semi-finished products, wherein each granular semi-finished product corresponds to one grain folding unit, and carrying out electroplating treatment on the granular semi-finished products to obtain the low-resistance negative temperature coefficient thermistor.
2. The process of claim 1, wherein in step S5, the resistance of the NTC thermistor is controlled by designing the pattern size of the second front electrode.
3. The process of claim 1 wherein the left electrode is longer than the right electrode.
4. The process for manufacturing a low-resistance NTC thermistor according to claim 1, wherein in steps S1-S5, the sintering temperature is 800-900 ℃.
5. The manufacturing process of the low-resistance NTC thermistor according to claim 4, wherein in steps S1-S5, the sintering time is 6-15 min.
6. The process for manufacturing a low-resistance ntc thermistor according to claim 1, wherein in step S7, the sintering process comprises: and (4) standing the product obtained in the step S6 at normal temperature for 4-8 hours, and sintering at 220-280 ℃.
7. The process for producing a low-resistance ntc thermistor according to claim 1, wherein in step S6, the protective layer is produced by the steps of: printing a first insulating material on the second front electrode to obtain a first insulating layer, drying, printing a second insulating material to obtain a second insulating layer, and sintering to form the protective layer.
8. The process of claim 7, wherein the first insulating material is a glass paste epoxy paste and the second insulating material is an epoxy paste.
9. The process of claim 1, wherein a plurality of folding lines along a first direction and a plurality of folding lines along a second direction are uniformly formed on the upper surface and the lower surface of the substrate in advance before the step S1, the first direction and the second direction are substantially perpendicular, the folding lines and the folding lines intersect to form a grid, and each grid forms one folding unit.
10. A low-resistance ntc thermistor, characterized in that it is produced by the process of any one of claims 1 to 9, and the resistance R of the low-resistance ntc thermistor is: r is more than or equal to 1 omega and less than 1K omega.
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| CN114388209A (en) * | 2022-01-18 | 2022-04-22 | 翔声科技（厦门）有限公司 | Negative temperature coefficient thermistor suitable for severe environment and manufacturing process thereof |
| CN115985601A (en) * | 2022-10-28 | 2023-04-18 | 深圳顺络电子股份有限公司 | Thermistor and manufacturing method thereof |
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