CN107785135A - Six-terminal network type multikilowatt radio frequency power resistor device - Google Patents
Six-terminal network type multikilowatt radio frequency power resistor device Download PDFInfo
- Publication number
- CN107785135A CN107785135A CN201610720564.1A CN201610720564A CN107785135A CN 107785135 A CN107785135 A CN 107785135A CN 201610720564 A CN201610720564 A CN 201610720564A CN 107785135 A CN107785135 A CN 107785135A
- Authority
- CN
- China
- Prior art keywords
- electrode
- faces
- matrix
- attenuation factor
- multikilowatt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 238000005538 encapsulation Methods 0.000 claims abstract description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 108010014172 Factor V Proteins 0.000 claims 1
- 238000009825 accumulation Methods 0.000 abstract description 3
- 239000012141 concentrate Substances 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/08—Cooling, heating or ventilating arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Details Of Resistors (AREA)
Abstract
The present invention proposes a kind of six-terminal network type multikilowatt radio frequency power resistor device, including ring flange and matrix, also include A faces electrode, B faces electrode and side electrode, A faces electrode is in the upper surface of matrix, B faces electrode is in the lower surface of matrix, side electrode is in the side of matrix and connects A faces electrode and B faces electrode, and resistive element is located on the electrode of A faces and ensured and the stable overlap joint of A faces electrode bond end；Also include being covered in the medium protective layer to shield on resistive element；Metal lead wire is welded on the electrode of A faces using welding procedure；Encapsulation cover plate is bonded in body upper surface using high temperature adhesive.The advantage of the invention is that：Using classification drop volume principle, three matrixes is respectively subjected to certain power, avoid power and concentrate on single matrix and produce heat accumulation phenomenon, whole resistor is born the ability of power and greatly increase.Resistor overall distribution parameter is reduced, so that the frequency characteristic of resistor is improved.
Description
Technical field
The present invention relates to resistor field, particularly relates to a kind of six-terminal network type multikilowatt radio frequency power resistor device.
Background technology
Common radio frequency power resistor manufactures, and includes ring flange, matrix, the B faces conductive film layer positioned at matrix lower surface, position
A faces electrode film layer in body upper surface, the resistive layer mutually overlapped positioned at body upper surface and with A faces electrode film layer, it is located at
Body upper surface simultaneously covers the glass medium film layer that whole resistive element shields, and positioned at whole resistor most top layer
Play the ceramic cover plate of protective resistor integrality.
Conventional radio frequency power resistor carries resistive element come absorbed power using single matrix, and the power of absorption is with heat energy
Situation is distributed by matrix and ring flange.With increasing of the modern broadcast communication technology to radio frequency power resistor device power requirement
Greatly, resistive element needs increasing area to carry out absorbed power, but when power reaches kilowatt rank, simple increase resistance
The area of body can not solve the problems, such as radiating, and heat can entreat concentration to produce heat accumulation phenomenon in the base, so that resistive element
Centralised temperature, which steeply rises, causes thermal breakdown to cause resistor to fail.And if the radio frequency power resistor device of single matrix will reach
To the ability that can absorb multikilowatt power while cause heat accumulation phenomenon, then need the area of matrix and resistive element non-
Chang great, resistance bulk area is excessive to bring excessive parasitic parameter into, and matrix area crosses conference and produces deformation because of uneven heating.
The content of the invention
The present invention proposes a kind of six-terminal network type multikilowatt radio frequency power resistor device, enables to the work(of radio frequency power resistor
Rate bears to break through kilowatt rank without producing thermal breakdown because resistor overheats；So that multikilowatt radio frequency power resistor device frequency is special
Property reaches 1GHz (VSWR≤1.2).
The technical proposal of the invention is realized in this way：A kind of six-terminal network type multikilowatt radio frequency power resistor device, including
Ring flange and matrix, resistor system are made up of three one-level attenuation factor, two level attenuation factor and load system systems；Its
Middle one-level attenuation factor and two level attenuation factor use π shape attenuating structures, including three matrixes and respective A faces electrode, B faces
Electrode and side electrode；
For A faces electrode in the upper surface of matrix, the A faces electrode of one-level attenuation factor and two level attenuation factor is decay electricity
Pole, load system for load electrode, the electrode that the pad electrode is centrosymmetric by two parts forms, the load electrode
For anti-" Contraband " shape structure；For B faces electrode in the lower surface of matrix, side electrode is in the side of matrix and connects A faces electrode and B
Face electrode；Every group of side electrode includes left and right two in the attenuation factor, and side electrode only has one in the load system；
Resistive element, which is located on the electrode of A faces, and bond end each with A faces electrode is stable overlaps, in addition to is covered in each resistance
The medium protective layer to be shielded on body；Metal lead wire is welded on the electrode of A faces using welding procedure；Encapsulation cover plate uses
High temperature adhesive is bonded in body upper surface；The medium protective layer, metal lead wire and encapsulation cover plate are three, and one by one
It is correspondingly arranged.
Preferably, B faces electrode is imprinted on the lower surface of matrix using silk screen process.
Preferably, the ring flange is red copper material, and the silver layer for being easy to welding is plated on surface.
Compared with prior art, the advantage of the invention is that：Using classification drop volume principle, three matrixes are made to be respectively subjected to one
Fixed power, avoid power and concentrate on single matrix and produce hot concentration phenomenon, whole resistor is born the energy of power
Power greatly increases.Resistor overall distribution parameter is reduced, so that the frequency characteristic of resistor is improved.One-level decays
With two level decay the stepped rising of attenuation decibel, power distribution is also stepped, be not using etc. decibel average mark
With power, avoid one-level decay moment super high power by when bear excessive power and cause resistor to be burnt out by moment,
Thus considerably increase the reliability of resistor.The blank of field of broadcast communication multikilowatt high frequency power resistor is filled up.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is the matrix and electrode part-structure schematic diagram of the present invention；
Fig. 3 is the structural representation of resistance body portion of the present invention.
In figure：1st, ring flange；2nd, matrix；3rd, B faces electrode；4th, side electrode；5th, A faces electrode；6th, resistive element；7th, medium is protected
Sheath；8th, metal lead wire；9th, encapsulation cover plate.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on this
Embodiment in invention, the every other reality that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example is applied, belongs to the scope of protection of the invention.
Embodiment：Referring to Fig. 1, Fig. 2 and Fig. 3, a kind of six-terminal network type multikilowatt radio frequency power resistor device, including ring flange
1 and matrix 2, resistor system be made up of three one-level attenuation factor, two level attenuation factor and load system systems；Wherein one
Level attenuation factor and two level attenuation factor use π shape attenuating structures, including three matrixes 2 and respective A faces electrode 5, B faces electricity
Pole 3 and side electrode 4；
A faces electrode 5 is in the upper surface of matrix 2, and the A faces electrode 5 of one-level attenuation factor and two level attenuation factor is declines
Powered down pole, load system for load electrode, the electrode that the pad electrode is centrosymmetric by two parts forms, the load
Electrode is anti-" Contraband " shape structure；For B faces electrode 3 in the lower surface of matrix 2, side electrode 4 is in the side of matrix 2 and connects A
Face electrode 5 and B faces electrode 3；Every group of side electrode 4 includes left and right two in the attenuation factor, side in the load system
Electrode 4 only has one；
Resistive element 6 is located on A faces electrode 5 and overlapped with 5 each bond end of A faces electrode stabilization, in addition to is covered in each
The medium protective layer 7 to be shielded on resistive element 6；Metal lead wire 8 is welded on A faces electrode 5 using welding procedure；Encapsulation
Cover plate 9 is bonded in the upper surface of matrix 2 using high temperature adhesive；The medium protective layer 7, metal lead wire 8 and encapsulation cover plate 9 are
Three, and correspond and set.
Preferably, B faces electrode 3 is imprinted on the lower surface of matrix 2 using silk screen process.
Preferably, the ring flange 1 is red copper material, and the silver layer for being easy to welding is plated on surface.
As illustrated, present invention comprises ring flange 1, matrix 2 (includes three matrixes 21,22,23), (bag of B faces electrode 3
Containing three B faces electrodes 31,32,33), side electrode 4 (includes 3 groups of side electrodes 41,42,43), and A faces electrode 5 (includes three A
Face electrode 51,52,53), resistive element 6 (includes five groups of resistive elements, 61,62,63,64 be π type attenuating structure resistive elements, and 65 be negative
Carry resistive element 6), medium protective layer 7 (includes three medium protective layers 71,72,73), and metal lead wire 8 (includes three metal lead wires
81st, 82,83), encapsulation cover plate 9, (including three encapsulation cover plates 91,92,93).
Ring flange 1 selects red copper, and plates silver layer on surface and be easy to weld；Matrix 2 is using the good oxidation of heat conductivility
Beryllium ceramics；B faces electrode 3 is imprinted on the lower surface of matrix 2 using silk screen process and covers whole lower surface to ensure ground connection property
Can be good with heat dispersion, for A faces electrode 5 in the upper surface of matrix 2, side electrode 4 plays connection AB faces electrode in the side of matrix 2
Effect, resistive element 6 be located on A faces electrode 5 and with electrode 5 each bond end in A faces is stable overlaps；Medium protective layer 7 covers
Protective resistance body 6 by physical injury and prevents it by thermal breakdown during resistance trimming on resistive element 6；Metal lead wire 8
In 81 be welded on 51 in A faces electrode 5 using welding procedures；Encapsulation cover plate 9 is in the upper surface of matrix 2, using high temperature
Bonding agent is bonded, and effective effective part of protective resistor, ensure that the stabilization of the complete and performance of resistor structure.
Whole resistor system is divided into three parts composition, the respectively load of one-level attenuation factor, two level attenuation factor sum
System, corresponding thick film systems are carried on 21 in matrix 2, on 22 and on 23 respectively, are used between system in metal lead wire 8
82nd, 83 it is welded to connect.Attenuation factor includes 31,32 in B faces electrode 3, in side electrode 4 41, in 42, A faces electrode 5
51st, 52,61,62,63,64 (each system includes two kinds of three resistive elements) and medium protective layer 7 in resistive element 6 71,
72.Load system includes 33 in B faces electrode 3,53 in 43, A faces electrode 5 in side electrode 4,65 Hes in resistive element 6
73 in medium protective layer 7.Wherein B faces electrode 3 is located at the lower surface of matrix 2, and A faces electrode 5 is between the upper surface electrode of matrix 2
Connected by side electrode 4, resistive element 6 is located at the top of A faces electrode 5, is overlapped in each connection end of A faces electrode 5, is finally protected by medium
Sheath 7 covers each system upper surface, leaves behind welding region.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God any modification, equivalent substitution and improvements made etc., should be included in the scope of the protection with principle.
Claims (3)
1. a kind of six-terminal network type multikilowatt radio frequency power resistor device, including ring flange (1) and matrix (2), it is characterised in that：Electricity
Resistance device system is made up of three one-level attenuation factor, two level attenuation factor and load system systems；Wherein one-level attenuation factor
π shape attenuating structures are used with two level attenuation factor, including three matrixes (2) and respective A faces electrode (5), B faces electrode (3)
And side electrode (4)；
In the upper surface of matrix (2), the A faces electrode (5) of one-level attenuation factor and two level attenuation factor is A faces electrode (5)
Pad electrode, load system for load electrode, the electrode that the pad electrode is centrosymmetric by two parts forms, described negative
It is anti-" Contraband " shape structure to carry electrode；B faces electrode (3) is in the lower surface of matrix (2), and side electrode (4) is in the side of matrix (2)
Face simultaneously connects A faces electrode (5) and B faces electrode (3)；Every group of side electrode (4) includes left and right two in the attenuation factor, described
Side electrode (4) only has one in load system；
Resistive element (6), which is located on A faces electrode (5), and bond end each with A faces electrode (5) is stable overlaps, in addition to is covered in
The medium protective layer (7) to be shielded on each resistive element (6)；Metal lead wire (8) is welded in A faces electrode using welding procedure
(5) on；Encapsulation cover plate (9) is bonded in matrix (2) upper surface using high temperature adhesive；The medium protective layer (7), metal draw
Line (8) and encapsulation cover plate (9) are three, and correspond and set.
2. six-terminal network type multikilowatt radio frequency power resistor device according to claim 1, it is characterised in that：The B faces electricity
Pole (3) is imprinted on the lower surface of matrix (2) using silk screen process.
3. six-terminal network type multikilowatt radio frequency power resistor device according to claim 1, it is characterised in that：The ring flange
(1) it is red copper material, and the silver layer for being easy to welding is plated on surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610720564.1A CN107785135A (en) | 2016-08-24 | 2016-08-24 | Six-terminal network type multikilowatt radio frequency power resistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610720564.1A CN107785135A (en) | 2016-08-24 | 2016-08-24 | Six-terminal network type multikilowatt radio frequency power resistor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107785135A true CN107785135A (en) | 2018-03-09 |
Family
ID=61388670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610720564.1A Pending CN107785135A (en) | 2016-08-24 | 2016-08-24 | Six-terminal network type multikilowatt radio frequency power resistor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107785135A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962517A (en) * | 2018-08-01 | 2018-12-07 | 成都昊天宏达电子有限公司 | The radio frequency power resistor device of the anti-strong mechanical oscillation of self tapping installation |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216445A (en) * | 1978-12-22 | 1980-08-05 | The United States Of America As Represented By The Secretary Of The Army | Variable resistance attenuator |
| US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
| CN86106375A (en) * | 1986-09-22 | 1988-04-06 | 上海市测试技术研究所 | Power termination and to the improvement of manufacturing process in the hyperfrequency |
| JP2003173905A (en) * | 2001-12-05 | 2003-06-20 | Hitachi Ltd | Power converter equipped with shunt resistance |
| US20040233011A1 (en) * | 2003-05-20 | 2004-11-25 | Malcolm Bruce G. | In-line attenuator |
| JP2005236391A (en) * | 2004-02-17 | 2005-09-02 | Kyocera Corp | Variable attenuation circuit |
| CN201084506Y (en) * | 2007-09-11 | 2008-07-09 | 深圳市禹龙通电子有限公司 | High power RF resistance |
| CN102291096A (en) * | 2010-06-21 | 2011-12-21 | Tdk株式会社 | Attenuator |
| CN102709631A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30W 13db aluminum nitride ceramic substrate attenuation slice |
| CN105304241A (en) * | 2014-06-20 | 2016-02-03 | 昆山厚声电子工业有限公司 | Thick-film patch resistor with high power and low resistance value and manufacturing method of thick-film patch resistor |
| CN206022013U (en) * | 2016-08-24 | 2017-03-15 | 成都昊天宏达电子有限公司 | Six-terminal network type multikilowatt radio frequency power resistor device |
-
2016
- 2016-08-24 CN CN201610720564.1A patent/CN107785135A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216445A (en) * | 1978-12-22 | 1980-08-05 | The United States Of America As Represented By The Secretary Of The Army | Variable resistance attenuator |
| US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
| CN86106375A (en) * | 1986-09-22 | 1988-04-06 | 上海市测试技术研究所 | Power termination and to the improvement of manufacturing process in the hyperfrequency |
| JP2003173905A (en) * | 2001-12-05 | 2003-06-20 | Hitachi Ltd | Power converter equipped with shunt resistance |
| US20040233011A1 (en) * | 2003-05-20 | 2004-11-25 | Malcolm Bruce G. | In-line attenuator |
| JP2005236391A (en) * | 2004-02-17 | 2005-09-02 | Kyocera Corp | Variable attenuation circuit |
| CN201084506Y (en) * | 2007-09-11 | 2008-07-09 | 深圳市禹龙通电子有限公司 | High power RF resistance |
| CN102291096A (en) * | 2010-06-21 | 2011-12-21 | Tdk株式会社 | Attenuator |
| CN102709631A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30W 13db aluminum nitride ceramic substrate attenuation slice |
| CN105304241A (en) * | 2014-06-20 | 2016-02-03 | 昆山厚声电子工业有限公司 | Thick-film patch resistor with high power and low resistance value and manufacturing method of thick-film patch resistor |
| CN206022013U (en) * | 2016-08-24 | 2017-03-15 | 成都昊天宏达电子有限公司 | Six-terminal network type multikilowatt radio frequency power resistor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962517A (en) * | 2018-08-01 | 2018-12-07 | 成都昊天宏达电子有限公司 | The radio frequency power resistor device of the anti-strong mechanical oscillation of self tapping installation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105261663B (en) | Solar module | |
| CN101394968A (en) | Resistance welding head and preparation thereof | |
| CN108075350A (en) | Coaxial packaging laser | |
| WO2023116448A1 (en) | Insulation electrode for electric field-based tumor treatment, and manufacturing method therefor | |
| CN107785135A (en) | Six-terminal network type multikilowatt radio frequency power resistor device | |
| CN206022013U (en) | Six-terminal network type multikilowatt radio frequency power resistor device | |
| CN112350031A (en) | Battery with a battery cell | |
| CN206022012U (en) | Double trapezoid RF high power resistor | |
| CN103871724B (en) | Power inductance and manufacture method thereof | |
| CN103298171A (en) | Electromagnetic-radiation-free heating plate | |
| CN102709649A (en) | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate | |
| CN206210500U (en) | Double L-shaped radio frequency power resistor devices | |
| CN206022011U (en) | There is the high-power high-frequency radio frequency power resistor device of good third order intermodulation | |
| CN206322540U (en) | High power current detector | |
| CN100527295C (en) | Iron-cored grounding shield and making method thereof | |
| KR101895104B1 (en) | Ptc device | |
| CN213339926U (en) | Resistor adopting resistance chip with diamond structure | |
| CN103489567B (en) | Common mode inductance | |
| CN205944007U (en) | Novel surface mounting fuse | |
| CN206711689U (en) | Make the sandwich construction and circuit protecting element of circuit protecting element | |
| CN101800329A (en) | Battery pack | |
| CN205582736U (en) | Series connection ceramic capacitor | |
| CN210272622U (en) | 60W sheet type load sheet | |
| CN206059058U (en) | A kind of DC fields filter resistor and its resistor disc | |
| CN201936880U (en) | Diode series-parallel connection protection component for solar cell array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |