CN105284428A - Grafting seedling method for wax gourd - Google Patents

Grafting seedling method for wax gourd Download PDF

Info

Publication number
CN105284428A
CN105284428A CN201410249603.5A CN201410249603A CN105284428A CN 105284428 A CN105284428 A CN 105284428A CN 201410249603 A CN201410249603 A CN 201410249603A CN 105284428 A CN105284428 A CN 105284428A
Authority
CN
China
Prior art keywords
seedling
grafting
wax gourd
rootstock
scion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410249603.5A
Other languages
Chinese (zh)
Inventor
文红斌
李国华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hunan Xiang Yuan Ecological Agriculture Development Co Ltd
Original Assignee
Hunan Xiang Yuan Ecological Agriculture Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hunan Xiang Yuan Ecological Agriculture Development Co Ltd filed Critical Hunan Xiang Yuan Ecological Agriculture Development Co Ltd
Priority to CN201410249603.5A priority Critical patent/CN105284428A/en
Publication of CN105284428A publication Critical patent/CN105284428A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cultivation Of Plants (AREA)

Abstract

The present invention discloses a grafting seedling method for a wax gourd. The method comprises: S1, cultivating a rootstock seedling: selecting a Cucurbita moschata seed grown in a high and cold mountain area in north to cultivate the rootstock seedling, wherein the rootstock seedling grows to be a seedling with a leaf to two leaves; S2, cultivating a scion seedling: cultivating a wax gourd seedling, and selecting a wax gourd seedling in a state that a hypocotyl is straightened and two cotyledons are not completely flat as the scion seedling; S3, grafting: grafting the scion seedling in step S2 to the rootstock seedling in step S1 to obtain a grafting seedling by adopting a top bud inlaying method; and S4, carrying out management after the grafting: cultivating the grafting seedling in step S3 under the condition of 26-28 DEG C for 7-10 days to obtain a survived grafting seedling. The present invention provides a grafting seedling method for wax gourd, and under the condition that a climate condition does not change, early culture of the wax gourd and earlier coming into a market are realized, and the economic benefit is remarkable.

Description

The grafting seedlings-growing method of a kind of wax gourd
Technical field
The present invention relates to planting technical field, be specifically related to the grafting seedlings-growing method of a kind of wax gourd.
Background technology
Wax gourd is annual herb plant, and summer is ripe, because of its there is clearing heat and detoxicating, diuresis and phlem dispersing, the effect such as relieving restlessness is quenched the thirst, clearing damp relieving summer-heat, and storage tolerance, more welcome in summer vegetable.
Benincasa likes warm warm tolerance crop, and its root growth requires that soil temperature is more than 15 DEG C.At present, the planting type overwhelming majority of wax gourd is all adopt from root growing nursery and culture, and planting time is on April about the ten days, and maturation time is more late.This planting type is mainly subject to weather conditions and wax gourd grows the restriction required from root nursery, is difficult to the cultivation object that realization cultivation morning product early goes public, can not meets the demand that people early go public to wax gourd.
Summary of the invention
The object of the invention is to overcome above shortcoming, under a kind of condition constant at weather conditions is provided, realizes wax gourd and early plant the grafting seedlings-growing method early gone public.
Technical scheme of the present invention is:
A grafting seedlings-growing method for wax gourd, comprising:
S1: cultivate rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, described rootstock seedling grows to leaf wholeheartedly to two leaf wholeheartedly;
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling;
S3, grafting: the scion seedling grafting in step S2 on the rootstock seedling in step S1, is obtained grafting by employing terminal bud insertion method;
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 26-28 DEG C of condition, obtain the grafting survived.
Further, in described step S1, the breeding method of rootstock seedling comprises:
1., seed, sowing is soaked;
2. cultivate 3-5 days under, after planting by seedbed remaining on 26-30 DEG C of condition, come up;
3., seedling plumular axis is when stretching, and cultivates 10-20 days by seedling replanting to nutritive cube; After transplanting, the temperature controlling growth of seedling environment is: day temperature controls at 20-32 DEG C, and nocturnal temperature controls at 10-14 DEG C.
Further, in the soaking technology of described rootstock seedling seed, first use the emerge in worm water of 50-55 DEG C, be reduced to after normal temperature until water temperature and soak 6-10 hour again.
Further, in the sowing technique of described rootstock seedling, thickness of sowing be 700-1000 grain/square metre.
Further, the sowing time of described rootstock seedling seed is the first tenday period of a month in January.
Preferably, carry out soil sterilization before rootstock seedling planting seed, bactericidal liquid is for disliking mould trickle solution.
Preferably, cultivate in rootstock seedling seedling replanting to nutritive cube, breeding method also comprises water and fertilizer management step: when becoming a fine day, the moisture in extra-nutrition alms bowl, and controlling nutritive cube mesostroma moisture is 70-75%; Add bactericide and fertilizer during moisturizing, make concentration of aqueous solution be 0.2-0.5%, wherein, bactericide is topsin, and fertilizer is efficient compound fertilizer.
Further, in described step S2, the breeding method of scion seedling comprises:
1., when rootstock seedling rough leaf starts to stretch, start to soak gourd seed;
2., sowing, control thickness of sowing be 1000-2000 grain/square metre;
3., after planting 4-5 days, obtain scion seedling.
Further, described terminal bud insertion method comprises the steps:
2. rootstock seedling top true leaf, is removed;
2., on the wound of rootstock seedling top, to insert a degree of depth with wedge toothpick be the aperture of 0.8-1.2cm, forms the first wedge face in described aperture;
3., at scion seedling plumular axis place cut out the second wedge face, described second wedge face is corresponding with described first wedge face;
4., scion seedling is inserted in the aperture of rootstock seedling, the first wedge face is contacted with the second wedge face;
5., wrap up.
Further, the length in described second wedge face is 0.4-0.6cm, and the length of described second upper end, wedge face distance scion young plant petiole is 0.7-1cm.
The grafting seedlings-growing method of wax gourd provided by the invention, tool has the following advantages:
1, the grafting seedlings-growing method of wax gourd provided by the invention, the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, make full use of stock root to tie up to soil temperature and reach more than the 5 DEG C cold resistance that just can grow, one month earlier can cultivate than from root nursery, thus realize product and early go public.
2, the grafting seedlings-growing method of wax gourd provided by the invention, because of the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, make stock root system than more flourishing from the root system of root nursery, output can be made significantly to increase, and output increased amplitude can reach about 30%-70%.
3, the grafting seedlings-growing method of wax gourd provided by the invention, because adopting the white seed pumpkin of cold area in north to be stock, effectively can overcome wax gourd can not the obstacle of continuous cropping, realizes cultivating for many years on same milpa, remarkable in economical benefits.
4, the grafting seedlings-growing method of wax gourd provided by the invention, by controlling the conditional parameter in each stages such as rootstock seedling cultivation, the cultivation of scion seedling, grafting cultivation, make the final grafting cultivated have more resistance and adaptability, fast growth, and growth is consistent.
Embodiment
Be clearly and completely described to the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A grafting seedlings-growing method for wax gourd, comprising:
S1, cultivation rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, and select to grow to leaf wholeheartedly to a two leaf seedling wholeheartedly as rootstock seedling;
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling;
S3, grafting: the scion seedling grafting in step S2 on the rootstock seedling in step S1, is obtained grafting by employing terminal bud insertion method;
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 26-28 DEG C of condition, obtain the grafting survived, and carries out Routine Management after grafting survives.
In the present embodiment, rootstock seedling breeding method and scion seeding cultivating method all adopt conventional breeding method.
Embodiment 2
A kind of wax gourd grafting seedlings-growing method, comprising:
S1, cultivation rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, and select to grow to leaf wholeheartedly to a two leaf seedling wholeheartedly as rootstock seedling; The concrete breeding method of rootstock seedling comprises:
1., seed is soaked: be immersed in by the Pumpkin Seed of selection in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 6-10 hour again, the warm water of 50-55 DEG C can adopt two to open a cool method mixing and convert into, and constantly stir when soaking seed, seed can fully be breathed in water; Sowing: picked up by soaked seed and be sown in nursery pond, thickness of sowing is 800/square metre;
Wherein, the construction of nursery pond: build seedling raising greenhouse, builds nursery pond in canopy, each nursery pond 10-12m 2, the thick loess of 3-5 ㎝ spread by each nursery pond bottom, then on soil layer the ground hot line of 1000W on cloth.
2. on seed, after planting cover the thick seedling medium of 2-3cm, and then cover mulch film and nursery pond is stamped arch film, arch film covers heat insulating cloth again, then ground hot line is energized, under making seedbed after planting remain on 26 DEG C of conditions, cultivate 3-5 days, until come up;
3., come up after, then the mulch film be layered on seedbed to be taken away, when seedling plumular axis stretches, cultivates 10-20 days by seedling replanting to nutritive cube; After transplanting, the temperature controlling growth of seedling environment is: day temperature controls at 20 DEG C, and nocturnal temperature controls at 10 DEG C; Wherein, the filling substrate in nutritive cube adopts pure matrix and loess to be made into, and the mixed proportion of pure matrix and loess is 1:1-3:2.
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling; Wherein, the breeding method of scion seedling and the breeding method of above-mentioned rootstock seedling similar, be specially:
1., when rootstock seedling rough leaf starts to stretch, start to soak gourd seed, in soaking technology, gourd seed is immersed in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 16-18h again;
2., sow, controlling thickness of sowing is 1500/square metre;
3., after planting 4-5 days, obtain scion seedling.
S3, grafting: adopt terminal bud insertion method by the scion seedling grafting in step S2 on the rootstock seedling in step S1, obtain grafting, terminal bud insertion method concrete steps are as follows:
1., remove rootstock seedling top true leaf, and guarantee that the wound removing true leaf place is totally smooth;
2., on the wound of rootstock seedling top, to insert a degree of depth with wedge toothpick be the aperture of 1.0cm, and form the first wedge face in aperture, the shape in the first wedge face is corresponding with the shape of wedge toothpick;
3., first will can be used for the wax gourd seedling clear water wash clean of scion seedling, cut out the second wedge face at scion seedling plumular axis place, the second wedge face is corresponding with above-mentioned first wedge face, and ensures wedge face uniformity;
4., scion seedling is inserted in the aperture of rootstock seedling, the first wedge face is contacted with the second wedge face;
5., wrap up, complete grafting operation.
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 26-28 DEG C of condition, obtain the grafting survived, and carries out Routine Management after grafting survives.
The 26-28 DEG C of constant temperature control method that grafting is cultivated is: surviving condition for creating grafting, needing the facility prepared to have: bamboo arch, bulb line, 60W incandescent lamp, mulch film, heat insulating cloth, thermometer, sunshade net etc.; After rootstock seedling completes grafting, seedling is put into and cultivates pond, water of before putting seedling, pond bed being drenched; After seedling is piled in cultivation pond, stamp bamboo arch, hang up bulb line, load onto 10 incandescent lamp bulbs, then cover mulch film and heat insulating cloth, then by ground hot line and the energising of bulb line.After performing above-mentioned process, by observing thermometer temperature, guarantee that grafting heals temperature required requirement.
Embodiment 3
A kind of wax gourd grafting seedlings-growing method, comprising:
S1, cultivation rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, and select to grow to leaf wholeheartedly to a two leaf seedling wholeheartedly as rootstock seedling; The concrete breeding method of rootstock seedling comprises:
1., seed is soaked: be immersed in by the Pumpkin Seed of selection in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 6-10 hour again, the warm water of 50-55 DEG C can adopt two to open a cool method mixing and convert into, and constantly stir when soaking seed, seed can fully be breathed in water; Sowing: picked up by soaked seed and be sown in nursery pond, thickness of sowing is 700/square metre; Sowing time is the annual the first tenday period of a month in January;
Wherein, the construction of nursery pond: build seedling raising greenhouse, builds nursery pond in canopy, each nursery pond 10-12m 2, the thick loess of 3-5cm spread by each nursery pond bottom, then on soil layer the ground hot line of 1000W on cloth.
2. on seed, after planting cover the thick seedling medium of 3cm, and then cover mulch film and nursery pond is stamped arch film, arch film covers heat insulating cloth again, then ground hot line is energized, under making seedbed after planting remain on 30 DEG C of conditions, cultivate 3-5 days, until come up;
3., come up after, then the mulch film be layered on seedbed to be taken away, when seedling plumular axis stretches, cultivates 10-20 days by seedling replanting to nutritive cube; After transplanting, the temperature controlling growth of seedling environment is: day temperature controls at 28 DEG C, and nocturnal temperature controls at 12 DEG C; Wherein, the filling substrate in nutritive cube adopts pure matrix and loess to be made into, and the mixed proportion of pure matrix and loess is 1:1.
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling; Wherein, the breeding method of scion seedling and the breeding method of above-mentioned rootstock seedling similar, be specially:
1., when rootstock seedling rough leaf starts to stretch, start to soak gourd seed, in soaking technology, gourd seed is immersed in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 16-18h again;
2., sow, controlling thickness of sowing is 1000/square metre;
3., after planting 4-5 days, obtain scion seedling.
S3, grafting: adopt terminal bud insertion method by the scion seedling grafting in step S2 on the rootstock seedling in step S1, obtain grafting, terminal bud insertion method concrete steps are as follows:
1., remove rootstock seedling top true leaf, and guarantee that the wound removing true leaf place is totally smooth;
2., on the wound of rootstock seedling top, to insert a degree of depth with wedge toothpick be the aperture of 0.8cm, and form the first wedge face in aperture, the shape in the first wedge face is corresponding with the shape of wedge toothpick;
3., first will can be used for the wax gourd seedling clear water wash clean of scion seedling, cut out the second wedge face at scion seedling plumular axis place, the second wedge face is corresponding with above-mentioned first wedge face, and ensures wedge face uniformity;
4., scion seedling is inserted in the aperture of rootstock seedling, the first wedge face is contacted with the second wedge face;
5., wrap up, complete grafting operation.
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 26 DEG C of conditions, obtain the grafting survived, and carries out Routine Management after grafting survives.
Embodiment 4
A kind of wax gourd grafting seedlings-growing method, comprising:
S1, cultivation rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, and select to grow to leaf wholeheartedly to a two leaf seedling wholeheartedly as rootstock seedling; The concrete breeding method of rootstock seedling comprises:
1., seed is soaked: be immersed in by the Pumpkin Seed of selection in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 6-10 hour again, the warm water of 50-55 DEG C can adopt two to open a cool method mixing and convert into, and constantly stir when soaking seed, seed can fully be breathed in water; Sowing: picked up by soaked seed and be sown in nursery pond, thickness of sowing is 1000/square metre; Sowing time is the annual the first tenday period of a month in January;
Wherein, the construction of nursery pond: build seedling raising greenhouse, builds nursery pond in canopy, each nursery pond 10-12m 2, the thick loess of 3-5cm spread by each nursery pond bottom, then on soil layer the ground hot line of 1000W on cloth.
2. on seed, after planting cover the thick seedling medium of 2-3cm, and then cover mulch film and nursery pond is stamped arch film, arch film covers heat insulating cloth again, then ground hot line is energized, under making seedbed after planting remain on 28 DEG C of conditions, cultivate 3-5 days, until come up;
3., come up after, then the mulch film be layered on seedbed to be taken away, when seedling plumular axis stretches, cultivates 10-20 days by seedling replanting to nutritive cube; After transplanting, the temperature controlling growth of seedling environment is: day temperature controls at 32 DEG C, and nocturnal temperature controls at 14 DEG C; Wherein, the filling substrate in nutritive cube adopts pure matrix and loess to be made into, and the mixed proportion of pure matrix and loess is 13:12.
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling; Wherein, the breeding method of scion seedling and the breeding method of above-mentioned rootstock seedling similar, be specially:
1., when rootstock seedling rough leaf starts to stretch, start to soak gourd seed, in soaking technology, gourd seed is immersed in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 16-18h again;
2., sow, controlling thickness of sowing is 2000/square metre;
3., after planting 4-5 days, obtain scion seedling.
S3, grafting: adopt terminal bud insertion method by the scion seedling grafting in step S2 on the rootstock seedling in step S1, obtain grafting, terminal bud insertion method concrete steps are as follows:
1., remove rootstock seedling top true leaf, and guarantee that the wound removing true leaf place is totally smooth;
2., on the wound of rootstock seedling top, to insert a degree of depth with wedge toothpick be the aperture of 1.2cm, and form the first wedge face in aperture, the shape in the first wedge face is corresponding with the shape of wedge toothpick;
3., first will can be used for the wax gourd seedling clear water wash clean of scion seedling, cut out the second wedge face at scion seedling plumular axis place, the second wedge face is corresponding with above-mentioned first wedge face, and ensures wedge face uniformity; The length in the second wedge face is 0.4-0.6cm, and the length of the second upper end, wedge face distance scion young plant petiole is 0.7-1cm.
4., scion seedling is inserted in the aperture of rootstock seedling, the first wedge face is contacted with the second wedge face;
5., wrap up, complete grafting operation.
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 28 DEG C of conditions, obtain the grafting survived, and carries out Routine Management after grafting survives.
Embodiment 5
A kind of wax gourd grafting seedlings-growing method, comprising:
S1, cultivation rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, and select to grow to leaf wholeheartedly to a two leaf seedling wholeheartedly as rootstock seedling; The concrete breeding method of rootstock seedling comprises:
1., seed is soaked: be immersed in by the Pumpkin Seed of selection in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 6-10 hour again, the warm water of 50-55 DEG C can adopt two to open a cool method mixing and convert into, and constantly stir when soaking seed, seed can fully be breathed in water; Sowing: soaked seed is picked up and is sown in nursery pond, thickness of sowing be 700-1000 grain/square metre; Sowing time is the annual the first tenday period of a month in January;
Wherein, the construction of nursery pond: build seedling raising greenhouse, builds nursery pond in canopy, each nursery pond 10-12m 2, the thick loess of 3-5cm spread by each nursery pond bottom, then on soil layer the ground hot line of 1000W on cloth.
2., on seed, the thick seedling medium of 2-3cm is after planting covered, and then cover mulch film and nursery pond is stamped arch film, arch film covers heat insulating cloth again, then ground hot line is energized, 3-5 days is cultivated, until come up under making seedbed after planting remain on 26-30 DEG C of condition;
3., come up after, then the mulch film be layered on seedbed to be taken away, when seedling plumular axis stretches, cultivates 10-20 days by seedling replanting to nutritive cube; After transplanting, the temperature controlling growth of seedling environment is: day temperature controls at 20-32 DEG C, and nocturnal temperature controls at 10-14 DEG C; Wherein, the filling substrate in nutritive cube adopts pure matrix and loess to be made into, and the mixed proportion of pure matrix and loess is 3:2.
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling; Wherein, the breeding method of scion seedling and the breeding method of above-mentioned rootstock seedling similar, be specially:
1., when rootstock seedling rough leaf starts to stretch, start to soak gourd seed, in soaking technology, gourd seed is immersed in the warm water of 50-55 DEG C, be cooled to after normal temperature until warm water temperature and soak 16-18h again;
2., sowing, control thickness of sowing be 1000-2000 grain/square metre;
3., after planting 4-5 days, obtain scion seedling.
S3, grafting: adopt terminal bud insertion method by the scion seedling grafting in step S2 on the rootstock seedling in step S1, obtain grafting, terminal bud insertion method concrete steps are as follows:
1., remove rootstock seedling top true leaf, and guarantee that the wound removing true leaf place is totally smooth;
2., on the wound of rootstock seedling top, to insert a degree of depth with wedge toothpick be the aperture of 1.0cm, and form the first wedge face in aperture, the shape in the first wedge face is corresponding with the shape of wedge toothpick;
3., first will can be used for the wax gourd seedling clear water wash clean of scion seedling, cut out the second wedge face at scion seedling plumular axis place, the second wedge face is corresponding with above-mentioned first wedge face, and ensures wedge face uniformity; The length in the second wedge face is 0.5cm, and the length of the second upper end, wedge face distance scion young plant petiole is 1cm.
4., scion seedling is inserted in the aperture of rootstock seedling, the first wedge face is contacted with the second wedge face;
5., wrap up, complete grafting operation.
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 26-28 DEG C of condition, obtain the grafting survived, and carries out Routine Management after grafting survives.
The 26-28 DEG C of constant temperature control method that grafting is cultivated is: surviving condition for creating grafting, needing the facility prepared to have: bamboo arch, bulb line, 60W incandescent lamp, mulch film, heat insulating cloth, thermometer, sunshade net etc.; After rootstock seedling completes grafting, seedling is put into and cultivates pond, water of before putting seedling, pond bed being drenched; After seedling is piled in cultivation pond, stamp bamboo arch, hang up bulb line, load onto 10 incandescent lamp bulbs, then cover mulch film and heat insulating cloth, then by ground hot line and the energising of bulb line.After performing above-mentioned process, by observing thermometer temperature, guarantee that grafting heals temperature required requirement.
Embodiment 6-7
On the basis of embodiment 5, by rootstock seedling incubation step, after seedling replanting, the temperature controlling growth of seedling environment is revised as successively: day temperature controls at 17 DEG C, and nocturnal temperature controls at 8 DEG C; Day temperature controls at 34 DEG C, and nocturnal temperature controls at 15 DEG C; Obtain embodiment 6-7.
Embodiment 8
On the basis of embodiment 5, increase soil sterilization step before rootstock seedling planting seed, bactericidal liquid is for disliking mould trickle solution, and seedbed that bactericidal liquid is drenched, obtain embodiment 8.
Embodiment 9
On the basis of embodiment 5, carry out in cultivating technique in seedling replanting to nutritive cube, increase water and fertilizer management step, concrete grammar is: when becoming a fine day, the moisture in extra-nutrition alms bowl, and controlling nutritive cube mesostroma moisture is 70-75%; Add bactericide and fertilizer during moisturizing, make concentration of aqueous solution be 0.2-0.5%, wherein, bactericide is topsin, and fertilizer is efficient compound fertilizer, obtains embodiment 9.
Embodiment 10-11
On the basis of embodiment 9, by water and fertilizer management step, control nutritive cube mesostroma moisture and be revised as 65%, 80% successively, and add bactericide and fertilizer step when cancelling moisturizing, obtain embodiment 10, implement 11.
Embodiment 12-13
On the basis of embodiment 1, the grafting in step S3 is cultivated temperature and is revised as 24 DEG C, 30 DEG C successively, obtain embodiment 12, embodiment 13.
Embodiment 14-15
On the basis of embodiment 5, by grafting step, the length in the second wedge face is revised as 0.2cm successively, 0.8cm, accordingly, the length of the second upper end, wedge face distance scion young plant petiole is revised as 0.5cm successively, 1.2cm, obtains embodiment 14, embodiment 15.
Wax gourd cultivation is carried out according to the grafting seedlings-growing method of above-described embodiment wax gourd, because the white seed pumpkin adopting cold area in north is stock, stock root cording has cold resistance, can carry out stock planting seed when the first tenday period of a month in January, correspondingly, the wax gourd seedling as scion seedling cultivates time advance, the grafting survived can be cultivated in the first ten-day period of the March, comparablely one month earlier to cultivate from root nursery, thus wax gourd Time To Market one month earlier, remarkable in economical benefits.
The grafting seedlings-growing method of wax gourd provided by the invention, because adopting the white seed pumpkin of cold area in north to be stock, stock root cording has cold resistance, and effectively can overcome wax gourd can not the obstacle of continuous cropping, realize cultivating for many years on same milpa, remarkable in economical benefits.
Carry out wax gourd cultivation according to the wax gourd grafting seedlings-growing method of above-described embodiment, survival rate and output as follows:
Table 1: the graft seedling growth survival rate of different embodiment
Table 2: every per mu yield of different embodiment
From above-mentioned data analysis, the grafting seedlings-growing method of wax gourd provided by the invention, because the white seed pumpkin adopting cold area in north is stock, stock root system is than the well developed root system from root nursery, make grafting fully can absorb nutrition, wax gourd output is high, and output promotes amplitude can reach 30-70%.
Wherein, in embodiment 1, rootstock seedling breeding method and scion seeding cultivating method all adopt conventional breeding method, and correspondingly, graft seedling growth survival rate is lower, only has 91%, and wax gourd output is 9000Kg/ mu; Embodiment 2-5, graft seedling growth survival rate is higher, can reach 97-98%, and output also has obvious lifting, shows that, in rootstock seedling breeding method and scion seeding cultivating method, each technical parameter all produces larger impact to wax gourd grafting survival rate and output.
Embodiment 6-7 shows, in rootstock seedling incubation step, after seedling replanting, the growth of temperature environment on rootstock seedling has larger impact, nocturnal temperature is higher than 14 DEG C, and the easy excessive growth of rootstock seedling, affects the root system of rootstock seedling, lower than 10 DEG C, environmental temperature is too low, rootstock seedling poor growth; Day temperature lower than 20 DEG C, or during higher than 32 DEG C, all will affect the growth of rootstock seedling.As can be seen from table 1, table 2, control day temperature at 20-32 DEG C, nocturnal temperature is when 10-14 DEG C, and graft seedling growth survival rate is higher, and wax gourd output is high.
Embodiment 8 shows, carry out sterilization to soil before sowing, can reduce noxious bacteria affects the absorption of rootstock seedling to nutriment, thus affects the growth of rootstock seedling.Therefore, before sowing, sterilization is carried out to soil, the survival rate of rootstock seedling can be improved, also can improve the survival rate of grafting, and the per mu yield of wax gourd.
In embodiment 9, the survival rate of grafting is 100%, and wax gourd per mu yield is 13200Kg/ mu, illustrates in rootstock seedling cultivating process, the importance of water and fertilizer management.
Embodiment 10-11, effect when to further illustrate nutritive cube mesostroma moisture be 70-75% be better than moisture be less than 70% or be greater than 75% time situation; And interpolation bactericide and fertilizer all can improve the output of wax gourd and the survival rate of grafting during moisturizing.
Embodiment 12-13 shows, grafting cultivates temperature to the impact of grafting survival rate, and when temperature controls at 26-28 DEG C, grafting survival rate is high, and in other temperature ranges, survival rate reduces.
Embodiment 14-15 shows, in grafting technique, the bevel length in the second wedge face on scion seedling plumular axis and the position residing for bevel all affect the survival rate of grafting, and bevel length is too short, is unfavorable for that scion seedling absorbs nutrition; Because of scion seedling plumular axis limited length, bevel length is unsuitable long.By experiment, can show that the length in the second wedge face is 0.4-0.6cm, and the length of the second upper end, wedge face distance scion young plant petiole is in 0.7-1cm situation, effect is optimum.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments, equivalent replacement etc. done in protection scope of the present invention, all should be included within protection scope of the present invention.

Claims (10)

1. a grafting seedlings-growing method for wax gourd, is characterized in that, described grafting seedlings-growing method comprises:
S1: cultivate rootstock seedling: the white seed pumpkin cultivating seeds rootstock seedling selecting northern high and cold mountain area to grow, described rootstock seedling grows to leaf wholeheartedly to two leaf wholeheartedly;
S2, cultivate scion seedling: cultivate wax gourd seedling, and select plumular axis to stretch, two panels cotyledon not yet complete open and flat time wax gourd seedling as scion seedling;
S3, grafting: the scion seedling grafting in step S2 on the rootstock seedling in step S1, is obtained grafting by employing terminal bud insertion method;
S4, managing after grafting: the grafting in step S3 is cultivated 7-10 days under 26-28 DEG C of condition, obtain the grafting survived.
2. the grafting seedlings-growing method of wax gourd according to claim 1, is characterized in that, in described step S1, the breeding method of rootstock seedling comprises:
1., seed, sowing is soaked;
2. cultivate 3-5 days under, after planting by seedbed remaining on 26-30 DEG C of condition, come up;
3., seedling plumular axis is when stretching, and cultivates 10-20 days by seedling replanting to nutritive cube; After transplanting, the temperature controlling growth of seedling environment is: day temperature controls at 20-32 DEG C, and nocturnal temperature controls at 10-14 DEG C.
3. the grafting seedlings-growing method of wax gourd according to claim 2, is characterized in that, in the soaking technology of described rootstock seedling seed, first uses the emerge in worm water of 50-55 DEG C, is reduced to after normal temperature soaks 6-10 hour again until water temperature.
4. the grafting seedlings-growing method of wax gourd according to claim 2, is characterized in that, in the sowing technique of described rootstock seedling, thickness of sowing be 700-1000 grain/square metre.
5. the grafting seedlings-growing method of wax gourd according to claim 2, is characterized in that, the sowing time of described rootstock seedling seed is the first tenday period of a month in January.
6. the grafting seedlings-growing method of the wax gourd according to claim 4 or 5, is characterized in that, carries out soil sterilization before rootstock seedling planting seed, and bactericidal liquid is for disliking mould trickle solution.
7. the grafting seedlings-growing method of wax gourd according to claim 2, is characterized in that, cultivates in rootstock seedling seedling replanting to nutritive cube, and breeding method also comprises water and fertilizer management step:
When becoming a fine day, the moisture in extra-nutrition alms bowl, controlling nutritive cube mesostroma moisture is 70-75%; Add bactericide and fertilizer during moisturizing, make concentration of aqueous solution be 0.2-0.5%, wherein, bactericide is topsin, and fertilizer is efficient compound fertilizer.
8. the grafting seedlings-growing method of wax gourd according to claim 1, is characterized in that, in described step S2, the breeding method of scion seedling comprises:
1., when rootstock seedling rough leaf starts to stretch, start to soak gourd seed;
2., sowing, control thickness of sowing be 1000-2000 grain/square metre;
3., after planting 4-5 days, obtain scion seedling.
9. the grafting seedlings-growing method of wax gourd according to claim 1, is characterized in that, described terminal bud insertion method comprises the steps:
1. rootstock seedling top true leaf, is removed;
2., on the wound of rootstock seedling top, to insert a degree of depth with wedge toothpick be the aperture of 0.8-1.2cm, forms the first wedge face in described aperture;
3., at scion seedling plumular axis place cut out the second wedge face, described second wedge face is corresponding with described first wedge face;
4., scion seedling is inserted in the aperture of rootstock seedling, the first wedge face is contacted with the second wedge face;
5., wrap up.
10. the grafting seedlings-growing method of wax gourd according to claim 9, is characterized in that, the length in described second wedge face is 0.4-0.6cm, and the length of described second upper end, wedge face distance scion young plant petiole is 0.7-1cm.
CN201410249603.5A 2014-06-06 2014-06-06 Grafting seedling method for wax gourd Pending CN105284428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410249603.5A CN105284428A (en) 2014-06-06 2014-06-06 Grafting seedling method for wax gourd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410249603.5A CN105284428A (en) 2014-06-06 2014-06-06 Grafting seedling method for wax gourd

Publications (1)

Publication Number Publication Date
CN105284428A true CN105284428A (en) 2016-02-03

Family

ID=55182952

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410249603.5A Pending CN105284428A (en) 2014-06-06 2014-06-06 Grafting seedling method for wax gourd

Country Status (1)

Country Link
CN (1) CN105284428A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940968A (en) * 2016-05-27 2016-09-21 海南省农业科学院蔬菜研究所 A method for restraining spindling of grafted seedlings of white gourds
CN106717838A (en) * 2016-11-29 2017-05-31 海南省农业科学院蔬菜研究所 For the implantation methods of the cold-proof mitigation of wax gourd
CN108925379A (en) * 2018-07-30 2018-12-04 成都市农林科学院 A kind of overwintering grafting seedlings-growing method of wax gourd

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101810093A (en) * 2010-04-02 2010-08-25 吴洪生 Method and application for eliminating continuous cropping obstacles by secondary grafting
CN102138392A (en) * 2010-01-28 2011-08-03 付景兴 Method of cultivation frame type management in melon grafting and seedling shed
CN103609311A (en) * 2013-11-29 2014-03-05 贵州平坝宝地农业科技产业有限公司 Method for cultivating rapidly-growing tomatoes with high melon rate
CN103718838A (en) * 2014-01-24 2014-04-16 陈德飞 Watermelon large-land and large-seedling grafting seed-saving and high-yield cultivation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102138392A (en) * 2010-01-28 2011-08-03 付景兴 Method of cultivation frame type management in melon grafting and seedling shed
CN101810093A (en) * 2010-04-02 2010-08-25 吴洪生 Method and application for eliminating continuous cropping obstacles by secondary grafting
CN103609311A (en) * 2013-11-29 2014-03-05 贵州平坝宝地农业科技产业有限公司 Method for cultivating rapidly-growing tomatoes with high melon rate
CN103718838A (en) * 2014-01-24 2014-04-16 陈德飞 Watermelon large-land and large-seedling grafting seed-saving and high-yield cultivation method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
潘维德等: "日光温室西洋南瓜标准化生产技术", 《农业科技通讯》 *
袁士涛等: "春大棚小冬瓜嫁接栽培与病虫害防治技术", 《农技服务》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105940968A (en) * 2016-05-27 2016-09-21 海南省农业科学院蔬菜研究所 A method for restraining spindling of grafted seedlings of white gourds
CN106717838A (en) * 2016-11-29 2017-05-31 海南省农业科学院蔬菜研究所 For the implantation methods of the cold-proof mitigation of wax gourd
CN108925379A (en) * 2018-07-30 2018-12-04 成都市农林科学院 A kind of overwintering grafting seedlings-growing method of wax gourd

Similar Documents

Publication Publication Date Title
CN102612971B (en) Rose cutting propagation method
CN103609278B (en) A kind of watermelon in sunlight greenhouse cultivation method
CN100399878C (en) Water floatation seedling method of cotton
CN104082007B (en) A kind of sugar-apple cuttage breeding method
CN104641872A (en) Cucumber cultivation method
CN102972190A (en) Method for grafting watermelons and cultivating grafted seedlings
CN103749137A (en) Cutting seedling method for malus toringoides
CN105075790A (en) Quick potted grape cultivation method
CN107493889A (en) A kind of Winter-Spring Forcing cultivation method for culturing seedlings of greenhouse watermelon
CN107242032A (en) Walnut industrial fast breeding method and consolidant
CN106358920A (en) Cutting and grafting integrated method for oil-tea trees
CN108243959B (en) Efficient regeneration method taking stem section of sorghum as explant
CN101401533A (en) Seedling cultivation method for plum tree
CN101147459B (en) Dry-land crops dry-wet two-section tray seedling growth method
CN105284428A (en) Grafting seedling method for wax gourd
CN110810035B (en) Asexual propagation method of phyllanthus emblica
CN103314748A (en) Seedling raising method of highbred honeysuckles
CN105875208B (en) A kind of grafting method for changing into age cocoa chocolate tree
CN102090310B (en) Soilless culture substrate for violet
CN106941936A (en) The big tree childrenization method of hardwood nanmu
CN107372070B (en) Hardwood cutting seedling raising method based on Typha river fragrant oranges
CN108307944B (en) Cultivation method of cucumber flowers
CN105210677A (en) A kind of grafting seedlings-growing method of sponge gourd
CN106613363B (en) A kind of cultural method of umbrella shape locust tree shade tree
CN106717755A (en) The implantation methods of cowpea

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20190507

AD01 Patent right deemed abandoned