CN105161436B - 倒装芯片的封装方法 - Google Patents

倒装芯片的封装方法 Download PDF

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Publication number
CN105161436B
CN105161436B CN201510579955.1A CN201510579955A CN105161436B CN 105161436 B CN105161436 B CN 105161436B CN 201510579955 A CN201510579955 A CN 201510579955A CN 105161436 B CN105161436 B CN 105161436B
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China
Prior art keywords
flip
photoresist
chip
metal
electrode
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CN201510579955.1A
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English (en)
Chinese (zh)
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CN105161436A (zh
Inventor
柯全
伊福廷
潘明
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Ke Quan
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Priority to CN201510579955.1A priority Critical patent/CN105161436B/zh
Publication of CN105161436A publication Critical patent/CN105161436A/zh
Priority to PCT/CN2016/080209 priority patent/WO2017041491A1/zh
Priority to JP2018532495A priority patent/JP6777742B2/ja
Priority to US15/757,902 priority patent/US10985300B2/en
Application granted granted Critical
Publication of CN105161436B publication Critical patent/CN105161436B/zh
Priority to US17/095,727 priority patent/US20210090907A1/en
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
CN201510579955.1A 2015-09-11 2015-09-11 倒装芯片的封装方法 Active CN105161436B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201510579955.1A CN105161436B (zh) 2015-09-11 2015-09-11 倒装芯片的封装方法
PCT/CN2016/080209 WO2017041491A1 (zh) 2015-09-11 2016-04-26 倒装芯片的封装方法
JP2018532495A JP6777742B2 (ja) 2015-09-11 2016-04-26 フリップチップのパッケージ方法
US15/757,902 US10985300B2 (en) 2015-09-11 2016-04-26 Encapsulation method for flip chip
US17/095,727 US20210090907A1 (en) 2015-09-11 2020-11-11 Encapsulation Method for Flip Chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510579955.1A CN105161436B (zh) 2015-09-11 2015-09-11 倒装芯片的封装方法

Publications (2)

Publication Number Publication Date
CN105161436A CN105161436A (zh) 2015-12-16
CN105161436B true CN105161436B (zh) 2018-05-22

Family

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Family Applications (1)

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CN201510579955.1A Active CN105161436B (zh) 2015-09-11 2015-09-11 倒装芯片的封装方法

Country Status (4)

Country Link
US (1) US10985300B2 (https=)
JP (1) JP6777742B2 (https=)
CN (1) CN105161436B (https=)
WO (1) WO2017041491A1 (https=)

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* Cited by examiner, † Cited by third party
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CN105161436B (zh) * 2015-09-11 2018-05-22 柯全 倒装芯片的封装方法
US10861895B2 (en) 2018-11-20 2020-12-08 Ningbo Semiconductor International Corporation Image capturing assembly and packaging method thereof, lens module and electronic device
CN109817769B (zh) * 2019-01-15 2020-10-30 申广 一种新型led芯片封装制作方法
CN110112129B (zh) * 2019-06-05 2024-04-02 福建天电光电有限公司 一种玻璃荧光片的发光半导体制作工艺
CN111170271A (zh) * 2019-12-30 2020-05-19 杭州臻镭微波技术有限公司 一种嵌入式微系统模组中的芯片切割误差的协调方法
US12566304B2 (en) 2023-07-05 2026-03-03 International Business Machines Corporation Detection of optical module misalignment using a light frequency reactive agent
CN119365062B (zh) * 2024-10-21 2025-09-19 中国科学院上海微系统与信息技术研究所 超导量子芯片封装结构及超导量子芯片的倒装封装方法

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CN101728466A (zh) * 2008-10-29 2010-06-09 先进开发光电股份有限公司 高功率发光二极管陶瓷封装结构及其制造方法
US7939935B2 (en) * 2006-05-22 2011-05-10 Hitachi Cable Ltd. Electronic device substrate, electronic device and methods for fabricating the same
CN103794587A (zh) * 2014-01-28 2014-05-14 江苏长电科技股份有限公司 一种高散热芯片嵌入式重布线封装结构及其制作方法

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CN101436553B (zh) * 2007-11-16 2010-06-02 南茂科技股份有限公司 芯片重新配置的封装结构中使用金属凸块的制造方法
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US7939935B2 (en) * 2006-05-22 2011-05-10 Hitachi Cable Ltd. Electronic device substrate, electronic device and methods for fabricating the same
CN101452862A (zh) * 2007-11-28 2009-06-10 南茂科技股份有限公司 晶粒重新配置的堆栈封装方法及其堆栈结构
CN101728466A (zh) * 2008-10-29 2010-06-09 先进开发光电股份有限公司 高功率发光二极管陶瓷封装结构及其制造方法
CN103794587A (zh) * 2014-01-28 2014-05-14 江苏长电科技股份有限公司 一种高散热芯片嵌入式重布线封装结构及其制作方法

Also Published As

Publication number Publication date
JP2018529238A (ja) 2018-10-04
WO2017041491A1 (zh) 2017-03-16
CN105161436A (zh) 2015-12-16
JP6777742B2 (ja) 2020-10-28
US20180261743A1 (en) 2018-09-13
US10985300B2 (en) 2021-04-20

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Effective date of registration: 20190109

Address after: 518023 No. 3039 Baoan North Road, Luohu District, Shenzhen City, Guangdong Province

Patentee after: Ke Quan

Address before: 518023 No. 3039 Baoan North Road, Luohu District, Shenzhen City, Guangdong Province

Co-patentee before: Yi Futing

Patentee before: Ke Quan

Co-patentee before: Pan Ming