JP6777742B2 - フリップチップのパッケージ方法 - Google Patents

フリップチップのパッケージ方法 Download PDF

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Publication number
JP6777742B2
JP6777742B2 JP2018532495A JP2018532495A JP6777742B2 JP 6777742 B2 JP6777742 B2 JP 6777742B2 JP 2018532495 A JP2018532495 A JP 2018532495A JP 2018532495 A JP2018532495 A JP 2018532495A JP 6777742 B2 JP6777742 B2 JP 6777742B2
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Japan
Prior art keywords
flip chip
photoresist
metal
conductive layer
packaging method
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JP2018532495A
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English (en)
Japanese (ja)
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JP2018529238A (ja
JP2018529238A5 (https=
Inventor
クァン ケ
クァン ケ
フーティン イ
フーティン イ
ミン パン
ミン パン
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
JP2018532495A 2015-09-11 2016-04-26 フリップチップのパッケージ方法 Active JP6777742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201510579955.1A CN105161436B (zh) 2015-09-11 2015-09-11 倒装芯片的封装方法
CN201510579955.1 2015-09-11
PCT/CN2016/080209 WO2017041491A1 (zh) 2015-09-11 2016-04-26 倒装芯片的封装方法

Publications (3)

Publication Number Publication Date
JP2018529238A JP2018529238A (ja) 2018-10-04
JP2018529238A5 JP2018529238A5 (https=) 2018-12-13
JP6777742B2 true JP6777742B2 (ja) 2020-10-28

Family

ID=54802253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018532495A Active JP6777742B2 (ja) 2015-09-11 2016-04-26 フリップチップのパッケージ方法

Country Status (4)

Country Link
US (1) US10985300B2 (https=)
JP (1) JP6777742B2 (https=)
CN (1) CN105161436B (https=)
WO (1) WO2017041491A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105161436B (zh) * 2015-09-11 2018-05-22 柯全 倒装芯片的封装方法
US10861895B2 (en) 2018-11-20 2020-12-08 Ningbo Semiconductor International Corporation Image capturing assembly and packaging method thereof, lens module and electronic device
CN109817769B (zh) * 2019-01-15 2020-10-30 申广 一种新型led芯片封装制作方法
CN110112129B (zh) * 2019-06-05 2024-04-02 福建天电光电有限公司 一种玻璃荧光片的发光半导体制作工艺
CN111170271A (zh) * 2019-12-30 2020-05-19 杭州臻镭微波技术有限公司 一种嵌入式微系统模组中的芯片切割误差的协调方法
US12566304B2 (en) 2023-07-05 2026-03-03 International Business Machines Corporation Detection of optical module misalignment using a light frequency reactive agent
CN119365062B (zh) * 2024-10-21 2025-09-19 中国科学院上海微系统与信息技术研究所 超导量子芯片封装结构及超导量子芯片的倒装封装方法

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US5405813A (en) * 1994-03-17 1995-04-11 Vlsi Technology, Inc. Optimized photoresist dispense method
US20040007779A1 (en) * 2002-07-15 2004-01-15 Diane Arbuthnot Wafer-level method for fine-pitch, high aspect ratio chip interconnect
SE0302437D0 (sv) * 2003-09-09 2003-09-09 Joachim Oberhammer Film actuator based RF MEMS switching circuits
JP4687066B2 (ja) * 2004-10-25 2011-05-25 株式会社デンソー パワーｉｃ
JP4431123B2 (ja) * 2006-05-22 2010-03-10 日立電線株式会社 電子装置用基板およびその製造方法、並びに電子装置およびその製造方法
CN101436553B (zh) * 2007-11-16 2010-06-02 南茂科技股份有限公司 芯片重新配置的封装结构中使用金属凸块的制造方法
CN101452862B (zh) * 2007-11-28 2011-04-20 南茂科技股份有限公司 晶粒重新配置的封装方法
JP5201983B2 (ja) 2007-12-28 2013-06-05 富士通株式会社 電子部品
JP5107187B2 (ja) 2008-09-05 2012-12-26 新光電気工業株式会社 電子部品パッケージの製造方法
CN101728466A (zh) * 2008-10-29 2010-06-09 先进开发光电股份有限公司 高功率发光二极管陶瓷封装结构及其制造方法
CN102884645B (zh) * 2010-01-29 2015-05-27 西铁城电子株式会社 发光装置的制造方法以及发光装置
KR101181224B1 (ko) * 2011-03-29 2012-09-10 성균관대학교산학협력단 Ｌｅｄ 패키지 및 그 제조방법
JP5748336B2 (ja) * 2011-06-10 2015-07-15 富士機械製造株式会社 半導体装置の製造方法
CN103094135A (zh) 2011-11-01 2013-05-08 柯全 倒装芯片的封装方法
JP5829501B2 (ja) * 2011-12-01 2015-12-09 富士機械製造株式会社 半導体素子画像認識装置及び半導体素子画像認識方法
JP6029188B2 (ja) * 2012-03-26 2016-11-24 富士機械製造株式会社 Ｌｅｄパッケージ及びその製造方法
JP5521130B1 (ja) 2012-08-30 2014-06-11 パナソニック株式会社 電子部品パッケージおよびその製造方法
CN103084135B (zh) 2013-02-06 2015-05-20 武汉工程大学 一种卧式撞击流反应器
CN103488051B (zh) * 2013-08-28 2015-11-11 中国科学院高能物理研究所 一种用于liga技术的光刻胶膜与基片的复合结构的制备方法
CN103794587B (zh) * 2014-01-28 2017-05-17 江阴芯智联电子科技有限公司 一种高散热芯片嵌入式重布线封装结构及其制作方法
CN104658929A (zh) 2014-04-22 2015-05-27 柯全 倒装芯片的封装方法及装置
CN105098025A (zh) * 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
CN105161436B (zh) * 2015-09-11 2018-05-22 柯全 倒装芯片的封装方法

Also Published As

Publication number Publication date
JP2018529238A (ja) 2018-10-04
WO2017041491A1 (zh) 2017-03-16
CN105161436A (zh) 2015-12-16
US20180261743A1 (en) 2018-09-13
CN105161436B (zh) 2018-05-22
US10985300B2 (en) 2021-04-20

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