CN107516705B - 一种基于ncsp封装技术的新型制作工艺 - Google Patents
一种基于ncsp封装技术的新型制作工艺 Download PDFInfo
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- 238000012536 packaging technology Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000003292 glue Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 239000000047 product Substances 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 9
- 239000011265 semifinished product Substances 0.000 claims description 9
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000010025 steaming Methods 0.000 claims description 4
- 230000001680 brushing effect Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- 239000011324 bead Substances 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
本发明公开了一种基于NCSP封装技术的新型制作工艺,它涉及CSP封装工艺领域,它包含蒸镀基板工艺、固晶工艺、荧光胶涂布工艺和产品切割工艺。它通过蒸镀工艺来实现产品的基板,其总厚度约为60um,芯片底部焊盘与基板紧密的结合,正负级焊盘中间区域也被荧光胶所填充,从而避免了NCSP灯珠在冷热交替环境下使用自身所产生应力而导致芯片受损,灯珠死灯现象。
Description
技术领域
本发明涉及一种基于NCSP封装技术的新型制作工艺,属于CSP封装工艺技术领域。
背景技术
典型的CSP封装技术,不再需要额外的次级基板或是导线架,直接贴合在载板上,因此业界还称之为白光芯片,免去封装基板后,封装体面积进一步缩小,提高出光角度和光密度,不仅如此,还把传统倒装芯片封装技术中固晶工艺所需的金锡共晶焊接变为低成本的无铅焊锡焊接,进一步降低封装成本;就目前封装技术来看,完全免基板暂时不易实现,当前绝大部分企业在生产CSP产品时,多会采用带基板的倒装焊技术;因此,从严格意义上分析,市场上大部分CSP可以归结于NCSP产品,现有的CSP封装是基于倒装技术而存在的,随着LED在材料、工艺、封装制程技术等方面的研究不断进步,尤其是倒装芯片的逐渐成熟与荧光粉涂覆技术的多样化,同时为满足应用市场对LED器件小型化需求,源于硅半导体技术的芯片级封装技术衍生出带基板芯片级封装,为LED白光封装形态带来新选择。
NCSP技术依靠倒装结构的芯片,将倒装芯片通过共晶焊技术焊接在陶瓷或柔性基板上,再将荧光粉层涂覆在作为出光窗口的蓝宝石及芯片四周侧壁上,形成五面发光型光源;现有的基板多采用铜材与胶材结合的形式组成,由于倒装芯片底部焊盘面积通常为对等设计,与基板上的铜材结合是通过锡膏作为电极传导介质,共晶时需要在260°左右环境下进行,在灯珠使用时可能会面临高温和低温的环境交替,由此一来,基板上的胶材会发生热胀冷缩的应力现象,从而推挤和拉扯基板上的铜材,继而导致基板拉扯芯片焊盘致使芯片损伤而造成灯珠死灯。
发明内容
针对上述问题,本发明要解决的技术问题是提供一种基于NCSP封装技术的新型制作工艺。
本发明的一种基于NCSP封装技术的新型制作工艺,它包含蒸镀基板工艺、固晶工艺、荧光胶涂布工艺和产品切割工艺。
作为优选,所述的蒸镀基板工艺是利用0.1-0.2mmm厚度钢板作为基板载体,表面覆盖一层UV膜,根据倒装芯片焊盘的面积大小使用蒸镀工艺在UV膜上蒸镀上相应面积的铜层,铜层厚度控制在20-30um,然后在铜层表面蒸镀上同等面积的镍层,镍层厚度20-30um,最后在镍层上蒸镀银层,其银层面积略大于倒装芯片底部焊盘面积,厚度2.0-3.0um,三种蒸镀层叠加在一起形成一个产品固晶区域B,由此区域面积所延伸形成的CSP产品外形进行阵列蒸镀排布,产品与产品接合处蒸镀切割定位圆铜层;所述的固晶工艺是使用锡膏印刷机在基板银层上进行刷锡作业,然后使用固晶机将倒装芯片贴固在锡膏表面,最后使用共晶炉设备进行共晶作业,让倒装芯片与基板银层很好焊接起来,起到导电和散热作用;所述的荧光胶涂布工艺是将固晶完毕的基板放置在荧光胶制模机上,通过调配好荧光胶成份,将其注入到模具型腔中,最后利用模机工艺将荧光胶涂布在基板上;所述的产品切割工艺是将涂布完成的连片半成品上的钢板从UV膜上撕下来,然后将半成品放置在切割机上,通过切割定位圆形蒸镀铜层标示将连片半成品切割成单体NCSP产品,最后再通过UV解胶方式将UV膜去除来得到最终形态的NCSP产品。
本发明的有益效果:它通过蒸镀工艺来实现产品的基板,其总厚度约为60um,芯片底部焊盘与基板紧密的结合,正负级焊盘中间区域也被荧光胶所填充,从而避免了NCSP灯珠在冷热交替环境下使用自身所产生应力而导致芯片受损,灯珠死灯现象。
附图说明:
为了易于说明,本发明由下述的具体实施及附图作以详细描述。
图1为本发明中NCSP基板形态正视图;
图2为本发明中NCSP结构侧视图。
1-钢板;2-UV膜;3-铜层;4-镍层;5-银层;6-锡膏;7-倒装芯片;8-荧光胶;9-圆形蒸镀铜层。
具体实施方式:
如图1-2所示,本具体实施方式采用以下技术方案:它包含蒸镀基板工艺、固晶工艺、荧光胶涂布工艺和产品切割工艺。
其中,所述的蒸镀基板工艺是利用0.1-0.2mmm厚度钢板1作为基板载体,表面覆盖一层UV膜2,根据倒装芯片7焊盘的面积大小使用蒸镀工艺在UV膜2上蒸镀上相应面积的铜层3,铜层3厚度控制在20-30um,然后在铜层3表面蒸镀上同等面积的镍层4,镍层4厚度20-30um,最后在镍层4上蒸镀银层5,其银层5面积略大于倒装芯片7底部焊盘面积,厚度2.0-3.0um,三种蒸镀层叠加在一起形成一个产品固晶区域B,由此区域面积所延伸形成的CSP产品外形进行阵列蒸镀排布,产品与产品接合处蒸镀切割定位圆铜层9;所述的固晶工艺是使用锡膏印刷机在基板银层5上进行刷锡作业,然后使用固晶机将倒装芯片7贴固在锡膏6表面,最后使用共晶炉设备进行共晶作业,让倒装芯片7与基板银层5很好焊接起来,起到导电和散热作用;所述的荧光胶涂布工艺是将固晶完毕的基板放置在荧光胶制模机上,通过调配好荧光胶8成份,将其注入到模具型腔中,最后利用模机工艺将荧光胶涂布在基板上;所述的产品切割工艺是将涂布完成的连片半成品上的钢板1从UV膜上2撕下来,然后将半成品放置在切割机上,通过切割定位圆形蒸镀铜层9标示将连片半成品切割成单体NCSP产品,最后再通过UV解胶方式将UV膜2去除来得到最终形态的NCSP产品。
本具体实施方式通过蒸镀工艺来实现产品的基板,其总厚度约为60um,芯片底部焊盘与基板紧密的结合,正负级焊盘中间区域也被荧光胶所填充,从而避免了NCSP灯珠在冷热交替环境下使用自身所产生应力而导致芯片受损,灯珠死灯现象。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (1)
1.一种基于NCSP封装技术的制作工艺,其特征在于:它包含蒸镀基板工艺、固晶工艺、荧光胶涂布工艺和产品切割工艺;所述的NCSP封装技术的制作工艺为:蒸镀基板工艺是利用0.1-0.2mmm厚度钢板(1)作为基板载体,表面覆盖一层UV膜(2),根据倒装芯片(7)焊盘的面积大小使用蒸镀工艺在UV膜(2)上蒸镀上相应面积的铜层(3),铜层(3)厚度控制在20-30um,然后在铜层(3)表面蒸镀上同等面积的镍层(4),镍层(4)厚度20-30um,最后在镍层(4)上蒸镀银层(5),其银层(5)面积略大于倒装芯片(7)底部焊盘面积,厚度2.0-3.0um,三种蒸镀层叠加在一起形成一个产品固晶区域B,由此区域面积所延伸形成的CSP产品外形进行阵列蒸镀排布,产品与产品接合处蒸镀切割定位圆铜层(9);所述的固晶工艺是使用锡膏印刷机在基板银层(5)上进行刷锡作业,然后使用固晶机将倒装芯片(7)贴固在锡膏(6)表面,最后使用共晶炉设备进行共晶作业,让倒装芯片(7)与基板银层(5)很好焊接起来,起到导电和散热作用;所述的荧光胶涂布工艺是将固晶完毕的基板放置在荧光胶制模机上,通过调配好荧光胶(8)成份,将其注入到模具型腔中,最后利用模机工艺将荧光胶涂布在基板上;所述的产品切割工艺是将涂布完成的连片半成品上的钢板(1)从UV膜上(2)撕下来,然后将半成品放置在切割机上,通过切割定位圆形蒸镀铜层(9)标示将连片半成品切割成单体NCSP产品,最后再通过UV解胶方式将UV膜(2)去除来得到最终形态的NCSP产品。
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