CN105143501B - 混合的金属-硅-氧化物阻隔膜 - Google Patents

混合的金属-硅-氧化物阻隔膜 Download PDF

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Publication number
CN105143501B
CN105143501B CN201480005971.3A CN201480005971A CN105143501B CN 105143501 B CN105143501 B CN 105143501B CN 201480005971 A CN201480005971 A CN 201480005971A CN 105143501 B CN105143501 B CN 105143501B
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China
Prior art keywords
film
substrate
silicon
metal
oxide
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CN201480005971.3A
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English (en)
Chinese (zh)
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CN105143501A (zh
Inventor
艾瑞克R·迪基
布莱恩·拉森·丹费斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Lotus Applied Technology LLC
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Toppan Printing Co Ltd
Lotus Applied Technology LLC
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
CN201480005971.3A 2013-02-27 2014-02-26 混合的金属-硅-氧化物阻隔膜 Active CN105143501B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361770230P 2013-02-27 2013-02-27
US61/770,230 2013-02-27
PCT/US2014/018765 WO2014134204A1 (en) 2013-02-27 2014-02-26 Mixed metal-silicon-oxide barriers

Publications (2)

Publication Number Publication Date
CN105143501A CN105143501A (zh) 2015-12-09
CN105143501B true CN105143501B (zh) 2019-06-07

Family

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CN201480005971.3A Active CN105143501B (zh) 2013-02-27 2014-02-26 混合的金属-硅-氧化物阻隔膜

Country Status (6)

Country Link
US (2) US9263359B2 (enExample)
EP (1) EP2922979B1 (enExample)
JP (1) JP6437463B2 (enExample)
KR (1) KR102213047B1 (enExample)
CN (1) CN105143501B (enExample)
WO (1) WO2014134204A1 (enExample)

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DE102014211720A1 (de) * 2014-06-18 2015-12-24 Robert Bosch Gmbh Optikträger, Verfahren zur Herstellung eines Optikträgers, Vorrichtung zur Herstellung eines Optikträgers und Kamerasystem
KR102278917B1 (ko) * 2014-07-24 2021-07-20 오스람 오엘이디 게엠베하 배리어층을 형성하는 방법 및 상기 배리어층을 포함하는 지지체
DE102015102535B4 (de) * 2015-02-23 2023-08-03 Infineon Technologies Ag Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials
US10654251B2 (en) 2015-06-29 2020-05-19 3M Innovative Properties Company Ultrathin barrier laminates and devices
WO2017057228A1 (ja) * 2015-10-01 2017-04-06 シャープ株式会社 エレクトロルミネッセンス装置
CN105405986A (zh) * 2015-12-16 2016-03-16 张家港康得新光电材料有限公司 水汽阻隔膜、其制备方法与包含其的显示器
US10354950B2 (en) * 2016-02-25 2019-07-16 Ferric Inc. Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
JP2019513189A (ja) 2016-04-01 2019-05-23 スリーエム イノベイティブ プロパティズ カンパニー ロールツーロール原子層堆積装置及び方法
US10049869B2 (en) * 2016-09-30 2018-08-14 Lam Research Corporation Composite dielectric interface layers for interconnect structures
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
WO2019158960A1 (en) * 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10655217B2 (en) * 2018-05-01 2020-05-19 Spts Technologies Limited Method of forming a passivation layer on a substrate
US20200017970A1 (en) * 2018-07-12 2020-01-16 Lotus Applied Technology, Llc Water-insensitive methods of forming metal oxide films and products related thereto
JP2020113494A (ja) * 2019-01-16 2020-07-27 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
WO2020184910A1 (ko) * 2019-03-08 2020-09-17 (주)디엔에프 박막 내 금속 또는 금속 산화물을 포함하는 실리콘 금속 산화물 봉지막 및 이의 제조방법
KR102288163B1 (ko) * 2019-03-08 2021-08-11 (주)디엔에프 박막 내 금속 또는 금속 산화물을 포함하는 실리콘 금속 산화물 봉지막 및 이의 제조방법
KR102385042B1 (ko) * 2020-03-20 2022-04-11 한양대학교 산학협력단 봉지막 및 그 제조방법
US20230212746A1 (en) 2020-06-10 2023-07-06 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method
JP7881218B2 (ja) * 2024-10-08 2026-06-29 株式会社オプトラン 赤外線カットフィルタおよび赤外線カットフィルタを用いた撮像装置

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EP0436741A1 (en) * 1989-08-01 1991-07-17 Asahi Glass Company Ltd. DC sputtering method and target for producing films based on silicon dioxide
CN1398305A (zh) * 2000-12-12 2003-02-19 柯尼卡株式会社 薄膜形成方法、具有薄膜的物品、光学膜、介电体覆盖电极及等离子体放电处理装置
CN101440478A (zh) * 2007-11-08 2009-05-27 气体产品与化学公司 通过ald或cvd工艺制备含金属薄膜
US8101531B1 (en) * 2010-09-23 2012-01-24 Novellus Systems, Inc. Plasma-activated deposition of conformal films

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EP0436741A1 (en) * 1989-08-01 1991-07-17 Asahi Glass Company Ltd. DC sputtering method and target for producing films based on silicon dioxide
CN1398305A (zh) * 2000-12-12 2003-02-19 柯尼卡株式会社 薄膜形成方法、具有薄膜的物品、光学膜、介电体覆盖电极及等离子体放电处理装置
CN101440478A (zh) * 2007-11-08 2009-05-27 气体产品与化学公司 通过ald或cvd工艺制备含金属薄膜
US8101531B1 (en) * 2010-09-23 2012-01-24 Novellus Systems, Inc. Plasma-activated deposition of conformal films

Also Published As

Publication number Publication date
CN105143501A (zh) 2015-12-09
KR102213047B1 (ko) 2021-02-05
KR20150125941A (ko) 2015-11-10
US20140242736A1 (en) 2014-08-28
JP2016515166A (ja) 2016-05-26
EP2922979A4 (en) 2016-09-14
EP2922979A1 (en) 2015-09-30
US9263359B2 (en) 2016-02-16
WO2014134204A1 (en) 2014-09-04
US20170025635A1 (en) 2017-01-26
EP2922979B1 (en) 2020-10-28
JP6437463B2 (ja) 2018-12-12

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