CN105143501B - 混合的金属-硅-氧化物阻隔膜 - Google Patents

混合的金属-硅-氧化物阻隔膜 Download PDF

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Publication number
CN105143501B
CN105143501B CN201480005971.3A CN201480005971A CN105143501B CN 105143501 B CN105143501 B CN 105143501B CN 201480005971 A CN201480005971 A CN 201480005971A CN 105143501 B CN105143501 B CN 105143501B
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China
Prior art keywords
film
substrate
silicon
metal
oxide
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English (en)
Chinese (zh)
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CN105143501A (zh
Inventor
艾瑞克R·迪基
布莱恩·拉森·丹费斯
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Toppan Inc
Lotus Applied Technology LLC
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Toppan Printing Co Ltd
Lotus Applied Technology LLC
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201480005971.3A 2013-02-27 2014-02-26 混合的金属-硅-氧化物阻隔膜 Active CN105143501B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361770230P 2013-02-27 2013-02-27
US61/770,230 2013-02-27
PCT/US2014/018765 WO2014134204A1 (en) 2013-02-27 2014-02-26 Mixed metal-silicon-oxide barriers

Publications (2)

Publication Number Publication Date
CN105143501A CN105143501A (zh) 2015-12-09
CN105143501B true CN105143501B (zh) 2019-06-07

Family

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CN201480005971.3A Active CN105143501B (zh) 2013-02-27 2014-02-26 混合的金属-硅-氧化物阻隔膜

Country Status (6)

Country Link
US (2) US9263359B2 (enExample)
EP (1) EP2922979B1 (enExample)
JP (1) JP6437463B2 (enExample)
KR (1) KR102213047B1 (enExample)
CN (1) CN105143501B (enExample)
WO (1) WO2014134204A1 (enExample)

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DE102014211720A1 (de) * 2014-06-18 2015-12-24 Robert Bosch Gmbh Optikträger, Verfahren zur Herstellung eines Optikträgers, Vorrichtung zur Herstellung eines Optikträgers und Kamerasystem
CN107108917B (zh) * 2014-07-24 2020-04-28 欧司朗Oled股份有限公司 屏障层的制备方法和包含这种屏障层的载体主体
DE102015102535B4 (de) * 2015-02-23 2023-08-03 Infineon Technologies Ag Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials
KR20180025901A (ko) 2015-06-29 2018-03-09 쓰리엠 이노베이티브 프로퍼티즈 캄파니 초박형 배리어 라미네이트 및 장치
WO2017057228A1 (ja) * 2015-10-01 2017-04-06 シャープ株式会社 エレクトロルミネッセンス装置
CN105405986A (zh) * 2015-12-16 2016-03-16 张家港康得新光电材料有限公司 水汽阻隔膜、其制备方法与包含其的显示器
US10354950B2 (en) * 2016-02-25 2019-07-16 Ferric Inc. Systems and methods for microelectronics fabrication and packaging using a magnetic polymer
EP3436620A1 (en) 2016-04-01 2019-02-06 3M Innovative Properties Company Roll-to-roll atomic layer deposition apparatus and method
US10049869B2 (en) * 2016-09-30 2018-08-14 Lam Research Corporation Composite dielectric interface layers for interconnect structures
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11685991B2 (en) * 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10655217B2 (en) * 2018-05-01 2020-05-19 Spts Technologies Limited Method of forming a passivation layer on a substrate
US20200017970A1 (en) * 2018-07-12 2020-01-16 Lotus Applied Technology, Llc Water-insensitive methods of forming metal oxide films and products related thereto
JP2020113494A (ja) * 2019-01-16 2020-07-27 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
CN113906579B (zh) * 2019-03-08 2025-02-11 Dnf有限公司 硅金属氧化物封装膜及其制备方法
KR102288163B1 (ko) * 2019-03-08 2021-08-11 (주)디엔에프 박막 내 금속 또는 금속 산화물을 포함하는 실리콘 금속 산화물 봉지막 및 이의 제조방법
KR102385042B1 (ko) * 2020-03-20 2022-04-11 한양대학교 산학협력단 봉지막 및 그 제조방법
WO2021250477A1 (en) 2020-06-10 2021-12-16 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method

Citations (4)

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EP0436741A1 (en) * 1989-08-01 1991-07-17 Asahi Glass Company Ltd. DC sputtering method and target for producing films based on silicon dioxide
CN1398305A (zh) * 2000-12-12 2003-02-19 柯尼卡株式会社 薄膜形成方法、具有薄膜的物品、光学膜、介电体覆盖电极及等离子体放电处理装置
CN101440478A (zh) * 2007-11-08 2009-05-27 气体产品与化学公司 通过ald或cvd工艺制备含金属薄膜
US8101531B1 (en) * 2010-09-23 2012-01-24 Novellus Systems, Inc. Plasma-activated deposition of conformal films

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JP2917432B2 (ja) * 1989-08-01 1999-07-12 旭硝子株式会社 電導性ガラスの製造方法
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Patent Citations (4)

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EP0436741A1 (en) * 1989-08-01 1991-07-17 Asahi Glass Company Ltd. DC sputtering method and target for producing films based on silicon dioxide
CN1398305A (zh) * 2000-12-12 2003-02-19 柯尼卡株式会社 薄膜形成方法、具有薄膜的物品、光学膜、介电体覆盖电极及等离子体放电处理装置
CN101440478A (zh) * 2007-11-08 2009-05-27 气体产品与化学公司 通过ald或cvd工艺制备含金属薄膜
US8101531B1 (en) * 2010-09-23 2012-01-24 Novellus Systems, Inc. Plasma-activated deposition of conformal films

Also Published As

Publication number Publication date
US20170025635A1 (en) 2017-01-26
EP2922979B1 (en) 2020-10-28
JP2016515166A (ja) 2016-05-26
JP6437463B2 (ja) 2018-12-12
CN105143501A (zh) 2015-12-09
WO2014134204A1 (en) 2014-09-04
EP2922979A4 (en) 2016-09-14
US20140242736A1 (en) 2014-08-28
EP2922979A1 (en) 2015-09-30
KR102213047B1 (ko) 2021-02-05
KR20150125941A (ko) 2015-11-10
US9263359B2 (en) 2016-02-16

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