CN105103268B - 基板处理装置以及基板处理方法 - Google Patents

基板处理装置以及基板处理方法 Download PDF

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Publication number
CN105103268B
CN105103268B CN201480019122.3A CN201480019122A CN105103268B CN 105103268 B CN105103268 B CN 105103268B CN 201480019122 A CN201480019122 A CN 201480019122A CN 105103268 B CN105103268 B CN 105103268B
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China
Prior art keywords
substrate
mentioned
nozzle
treatment fluid
nozzles
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English (en)
Chinese (zh)
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CN105103268A (zh
Inventor
林航之介
大田垣崇
长岛裕次
矶明典
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
CN201480019122.3A 2013-03-29 2014-03-25 基板处理装置以及基板处理方法 Active CN105103268B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013-073877 2013-03-29
JP2013073877 2013-03-29
JP2014-060462 2014-03-24
JP2014060462A JP6203098B2 (ja) 2013-03-29 2014-03-24 基板処理装置及び基板処理方法
PCT/JP2014/058241 WO2014157180A1 (ja) 2013-03-29 2014-03-25 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
CN105103268A CN105103268A (zh) 2015-11-25
CN105103268B true CN105103268B (zh) 2017-11-17

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CN201480019122.3A Active CN105103268B (zh) 2013-03-29 2014-03-25 基板处理装置以及基板处理方法

Country Status (7)

Country Link
US (1) US10325787B2 (enExample)
EP (1) EP2980833A4 (enExample)
JP (1) JP6203098B2 (enExample)
KR (2) KR101867250B1 (enExample)
CN (1) CN105103268B (enExample)
TW (1) TWI508138B (enExample)
WO (1) WO2014157180A1 (enExample)

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US10332761B2 (en) 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6478692B2 (ja) * 2015-02-18 2019-03-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6361071B2 (ja) * 2015-02-25 2018-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN105914167B (zh) 2015-02-25 2018-09-04 株式会社思可林集团 基板处理装置
JP6517113B2 (ja) * 2015-08-28 2019-05-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および吐出ヘッド
JP6563762B2 (ja) * 2015-09-29 2019-08-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR20180013327A (ko) * 2016-07-29 2018-02-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN106065495B (zh) * 2016-08-17 2018-10-23 上海大族新能源科技有限公司 扩散源涂覆装置
KR101870650B1 (ko) 2016-08-25 2018-06-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6814653B2 (ja) * 2017-02-09 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6842952B2 (ja) * 2017-02-28 2021-03-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7040871B2 (ja) * 2017-07-28 2022-03-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理装置の部品検査方法
JP7202106B2 (ja) * 2018-08-31 2023-01-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102174065B1 (ko) * 2018-12-28 2020-11-04 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN112233996A (zh) * 2019-07-15 2021-01-15 长鑫存储技术有限公司 晶圆清洗装置、晶圆处理设备及晶圆清洗方法
JP7344720B2 (ja) * 2019-09-03 2023-09-14 東京エレクトロン株式会社 基板処理方法、記憶媒体、及び基板処理装置
JP2021077702A (ja) * 2019-11-06 2021-05-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7408421B2 (ja) * 2020-01-30 2024-01-05 株式会社Ｓｃｒｅｅｎホールディングス 処理条件特定方法、基板処理方法、基板製品製造方法、コンピュータープログラム、記憶媒体、処理条件特定装置、及び、基板処理装置
JP7093390B2 (ja) * 2020-10-15 2022-06-29 株式会社荏原製作所 基板洗浄装置
JP7710880B2 (ja) * 2021-04-27 2025-07-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US12285837B2 (en) * 2021-11-18 2025-04-29 SanDisk Technologies, Inc. Wafer surface chemical distribution sensing system and methods for operating the same
KR102811418B1 (ko) * 2021-11-30 2025-05-26 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
TW202406634A (zh) * 2022-04-28 2024-02-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
US12420313B2 (en) * 2022-08-09 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method
JP2024044544A (ja) * 2022-09-21 2024-04-02 キオクシア株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
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US20070199579A1 (en) * 2006-02-17 2007-08-30 Kei Hayasaki Substrate treatment method, substrate treatment apparatus, and semiconductor device manufacturing method
CN101727009A (zh) * 2008-10-21 2010-06-09 东京毅力科创株式会社 液处理装置和液处理方法

Also Published As

Publication number Publication date
EP2980833A1 (en) 2016-02-03
US20160071746A1 (en) 2016-03-10
KR101762054B1 (ko) 2017-07-26
KR101867250B1 (ko) 2018-06-12
JP2014209605A (ja) 2014-11-06
TWI508138B (zh) 2015-11-11
EP2980833A4 (en) 2016-08-10
CN105103268A (zh) 2015-11-25
TW201508815A (zh) 2015-03-01
US10325787B2 (en) 2019-06-18
KR20150119186A (ko) 2015-10-23
JP6203098B2 (ja) 2017-09-27
KR20170087524A (ko) 2017-07-28
WO2014157180A1 (ja) 2014-10-02

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