CN104965369A - 一种阵列基板、显示面板以及显示装置 - Google Patents

一种阵列基板、显示面板以及显示装置 Download PDF

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CN104965369A
CN104965369A CN201510451705.XA CN201510451705A CN104965369A CN 104965369 A CN104965369 A CN 104965369A CN 201510451705 A CN201510451705 A CN 201510451705A CN 104965369 A CN104965369 A CN 104965369A
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signal wire
goa
base palte
array base
region
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赵莽
田勇
陈彩琴
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201510451705.XA priority Critical patent/CN104965369A/zh
Priority to US14/888,971 priority patent/US10042223B2/en
Priority to PCT/CN2015/085711 priority patent/WO2017015973A1/zh
Publication of CN104965369A publication Critical patent/CN104965369A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
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    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

本发明公开了一种阵列基板、显示面板以及显示装置，其中阵列基板上设置有GND走线以及GOA区域，GND走线设置在GOA区域的外侧；GOA区域中设置有多种GOA信号线和N级GOA电路，N级GOA电路通过多种GOA信号线电连接，且第1级GOA电路与第N级GOA电路之间的中间区域设置有第一静电防护电路，用于泄放GOA信号线在所述中间区域的异常电荷。本发明阵列基板中GOA信号线之间具备较强的静电防护能力。

Description

一种阵列基板、显示面板以及显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种阵列基板、显示面板以及显示装置。
背景技术
静电在我们日常生活中无处不见，对于电子器件来说，一次无法察觉的轻微静电就可能对其造成严重伤害。随着电子技术的发展，电子器件的体积越做越小，高的集成度使得电子器件中单元线路越来越窄，相应的耐受静电放电的能力越来越差，静电敏感度越来越高。因此对于电子器件在生产、测试、维修、使用过程中的静电防护要求越来越高。
随着显示技术的发展，很多人投入到SOP(System On Panel)面板系统化的研究中，而面板中集成电路的静电防护也成为了研究重点，特别是对于采用GOA(Gate Driver On Array)技术的阵列基板，其中信号走线中间区域的静电防护容易被忽略，然而在生产测试过程中，中间区域反而容易产生静电，因此当出现较大静电时，中间区域的信号线容易被烧断，继而造成整个面板的失效。
发明内容
本发明主要解决现有技术中阵列基板信号走线的中间区域静电防护能力较弱的问题。
为解决上述技术问题，本发明提出一种阵列基板，该阵列基板上设置有GND走线、以及GOA区域，GND走线设置在GOA区域的外侧；GOA区域中设置有多种GOA信号线和N级GOA电路，N级GOA电路通过多种GOA信号线电连接，且第1级GOA电路与第N级GOA电路之间的中间区域设置有第一静电防护电路，用于泄放GOA信号线在中间区域的异常电荷。
其中，第一静电防护电路包括设置在多种GOA信号线和GND走线之间的多个静电防护单元。
其中，多种GOA信号线和GND走线之间的多个静电防护单元在中间区域对称设置。
其中，第一静电防护电路包括设置在多种GOA信号线之间多个静电防护单元。
其中，多种GOA信号线之间的多个静电防护单元在中间区域对称设置。
其中，多种GOA信号线包括STV信号线、U2D信号线、CK信号线、VGH信号线以及VGL信号线，多个静电防护单元设置在STV信号线和U2D信号线之间、U2D信号线和CK信号线之间，CK信号线和VGH信号线之间或VGH信号线和VGL信号线之间。
其中，第一级GOA电路的上边区域和第N级GOA电路的下边区域设置有第二静电防护电路，多种GOA信号线包括VGH信号线和VGL信号线；第二静电防护电路包括设置在上边区域VGH信号线和VGL信号线之间的静电防护单元，以及下边区域的VGH信号线和VGL信号线之间的静电防护单元。
其中，静电防护单元包括并联的第一二极管和第二二极管，其中第一二极管的正极电连接第二二极管的负极，第一二极管的负极电连接第二二极管的正极。
为解决上述技术问题，本发明又提供一种显示面板，该显示面板包括上述阵列基板。
为解决上述技术问题，本发明还提供一种显示装置，其特征在于，该显示装置包括上述显示面板。
本发明的有益效果是，区别于现有技术，本发明中的阵列基板上设置有GOA区域，以及设置在GOA区域外侧的GND走线；该GOA区域中设置有多种GOA信号线和N级GOA电路，N级GOA电路通过多种GOA信号线点连接，第1级GOA电路和第N级GOA电路之间的中间区域设置有第一静电防护电路，该第一静电防护电路用于泄放GOA信号线在中间区域的异常电荷，避免了当信号走线中间区域有较大的静电产生时，中间信号线易炸断，造成整个面板失效的问题。使得整个GOA信号线之间具备较强的静电防护能力。
附图说明
图1是本发明一种阵列基板一实施例的结构示意图；
图2是图1所示阵列基板上GOA区域静电防护的结构示意图；
图3是图2所示GOA区域静电防护中第一静电防护电路的静电防护单元的结构示意图；
图4是图2所示GOA区域静电防护中第二静电防护电路的第二静电防护单元的结构示意图；
图5是本发明一种显示面板一实施例的结构示意图；
图6是本发明一种显示装置一实施例的结构示意图。
具体实施方式
参阅图1，图1是本发明一种阵列基板一实施例的结构示意图，本实施例中阵列基板100上设置有AA(Active Area)区域11、GOA(GateDriver On Array)区域12、WOA(Wire On Array)区域13、Fanout区域14、IC(Integrated Circuit)区域15以及FPC(Flexible Printed Circuit)区域16。
其中AA区域11上设置有像素电极以及TFT，用于实现像素显示。
GOA区域12，用于产生AA区域11内TFT的栅极驱动信号，以对像素电极进行行扫描，并且在AA区域11的两侧分别设置有一GOA区域12，采用双边驱动的方式使得扫描信号更为强烈。
WOA区域13用于阵列基板100周围走线的连接。
Fanout区域14用于IC区域15和AA区域11数据线的走线设置。
IC区域15用于IC的bonding，即通过bonding工艺将IC连接在阵列基板100上，并通过IC来驱动阵列基板100内的电路继而驱动像素电极以实现显示。
FPC区域16用于FPC的bonding，阵列基板100通过FPC连接到主板，以构成显示面板，实现显示。
上述具有6个区域的阵列基板100是采用GOA技术的，GOA区域12的信号线为阵列基板100中的信号线的大部分，因此阵列基板100的静电防护设计主要是对GOA区域12的信号线进行静电防护。
请参阅图2、图3及图4，图2是图1所示阵列基板上GOA区域静电防护结构示意图；图3是图2所示GOA区域静电防护中第一静电防护电路的静电防护单元的结构示意图；图4是图2所示GOA区域静电防护中第二静电防护电路的第二静电防护单元的结构示意图；其中阵列基板100上的GOA区域12外侧设置有GND走线，GND走线环绕阵列基板100一周，用作阵列基板100的静电防护。
而在GOA区域12，设置有多种GOA信号线和N级GOA电路，N级GOA电路由多种GOA信号线电连接，实现串联，即整个GOA电路的信号是一级一级传输下来的，下一级GOA电路的信号由上一级GOA电路通过连接两者的多种GOA信号线提供。
由于GOA电路提供了像素电极的行扫描信号，因此一般来说，AA区域11中有多少行像素电极，则在GOA区域中相应的有多少级GOA电路。随着显示面板清晰度的要求日益提高，像素电极数量的设置也相应增多，相应的在阵列基板100上设置有多级GOA电路。在本实施例中，N取值1920，容易想到，在其他实施例中可根据需求进行N值的设置。
当阵列基板100上设置较多级GOA电路时，GOA电路间的GOA信号线也将更为密集，因此需要重点对阵列基板100上的GOA信号线之间的静电进行防护。
本实施例中GOA信号线包括STV信号线、U2D信号线、CK信号线、VGH信号线以及VGL信号线。其中，STV信号线为GOA电路的起始信号线，U2D信号线用于GOA电路的正扫描控制，CK信号线为时钟信号线，用作栅极移位信号的产生和控制，VGH信号线为高电压源信号线，VGL信号线为低电压源信号线，VGH信号线与VGL信号线为GOA电路提供电力驱动。
为方便后续静电防护电路的描述，以上仅仅介绍了几个最基本的GOA信号线，在实际应用中，通常还设置有其他信号线，例如D2U信号线、CK1信号线、CK2信号线等，可根据具体的使用情况进行不同的设置。
并且GOA信号线中的各个信号线使用频率不一样，例如VGH信号线和VGL信号线用于提供电力驱动，其使用频率较其他信号线更高，因此VGH信号线和VGL信号线也相对其他信号线更粗。
在本实施例中，根据信号线走线设置的不同，将GOA区域12划分为三个区域进行静电防护设置。三个区域分别为：第1级GOA电路上方的上边区域121、第1级GOA电路和第N级GOA电路之间的中间区域122、第N级GOA电路下方的下边区域123。
在中间区域122，GOA信号线之间没有交叠，相互平行设置，静电累积到一定程度时，容易在GOA信号线之间产生大电流，导致信号线的烧断；在上边区域121和下边区域123，VGH信号线和VGL信号线与其他信号线交叠设置，这种结构下，则是交叠处容易产生大电流，而导致信号线的烧断。
因此在中间区域122设置有第一静电防护电路124，用于泄放GOA信号线在中间区域122产生的异常电荷；而在上边区域121和下边区域123分别设置有第二静电防护电路125，用于泄放GOA信号线在上边区域121和下边区域123产生的异常电荷。
该第一静电防护电路124中包括GOA信号线和GND走线之间的多个静电防护单元1241，以及多种GOA信号线之间的多个静电防护单元1241。
其中，GOA信号线和GND信号线之间的多个静电防护单元1241在中间区域122对称设置。当N为偶数2n时，则在中间区域中间的第N/2级即第n级GOA电路和第n+1级GOA电路之间设置静电防护单元1241，然后依此原理分别在第n级GOA电路的上侧和第n+1级GOA电路的下侧再次对称设置静电防护单元1241；
当N为基数2n+1时，则在第n+1级GOA电路的上下两侧对称设置静电防护单元1241，例如在第n级GOA电路和第n+1级GOA电路之间、以及第n+1级GOA电路和第n+2级GOA电路之间设置静电防护单元1241。
同样的，GOA信号线之间的多个静电防护单元1241也在中间区域122内对称设置。这种对称设置的方式使得静电防护单元1241在中间区域122分布更为均匀，能够使用最少的静电防护单元1241，而达到最好的静电防护效果。在其他实施例中，也可根据其他的布置规律设置静电防护单元1241。
本实施例中GOA信号线包括STV信号线、U2D信号线、CK信号线、VGH信号线以及VGL信号线，因此多个静电防护单元1241设置在STV信号线与U2D信号线之间、U2D信号线与CK信号线之间、CK信号线与VGH信号线之间或者VGH信号线与VGL信号线之间。
本实施例中上述所有的GOA信号线之间均设置有静电防护单元1241，以实现各个GOA信号线上异常电荷的泄放。为节约材料，并简化GOA区域静电防护电路的复杂度，也可选择部分GOA信号线来设置静电防护单元1241。
具体来说，该静电防护单元1241包括并联的第一二极1242管和第二二极管1243，两二极管类型相同，其中第一二极管1242的正极电连接第二二极管1243的负极，第一二极管1242的负极电连接第二二极管1243的正极。然后再将该静电防护单元1241连接在两GOA信号线之间，无论在那根GOA信号线上积累了静电电荷，都可通过第一二极管1242或第二二极管1243向另一根GOA信号线泄放。
由于二极管在一定的电压条件下才能导通，因此GOA信号线之间的静电防护单元对于相对较弱的正常工作信号并没有影响，并且只有当静电电荷积累到一定程度后，才会通过二极管进行泄放。
基于此原理，静电防护单元1241的作用类似于电路中的大电阻，在对电荷实现泄放的同时，不会影响到正常信号的工作。因此上述二极管也可由三极管代替，本实施例中选择TFT晶体管，当选择N型TFT晶体管时，其中漏极和栅极相连相当于二极管的正极，源极相当于二极管的负极；当选择P型TFT晶体管时，其中源极相当于二极管的正极，漏极和栅极相连相当于二极管的负极。
对于第二静电防护电路125，其包括VGH信号线和VGL信号线之间的第一静电防护单元1251，该第一静电防护单元1251与第一静电防护电路124中的多个静电防护单元1241相同；通过并联的两个二极管实现平行设置的VGH信号线和VGL信号线之间的静电泄放。
第二静电防护电路125中还包括其他GOA信号线与VGH信号线以及VGL信号线之间的第二静电防护单元1252，该第二静电防护单元1252也包括两个类型相同的二极管，即第三二极管1253和第四二极管1254。以STV信号线、VGH信号线以及VGL信号线之间的第二静电防护单元1252为例，其中第三二极管1253的正极连接VGL信号线，负极连接STV信号线；第四二极管1254的正极连接STV信号线；负极连接VGH信号线。其他GOA信号线与VGH信号线、VGL信号线之间作相同静电防护设置，且该二极管也可用三极管代替。
由以上描述可知，本实施例阵列基板中GOA区域的第1级GOA电路和第N级GOA电路之间的中间区域设置有第一静电防护电路，能够泄放GOA信号线之间的异常电荷，提高了整个阵列基板中间区域的静电防护能力，避免了当信号走线中间区域有较大的静电产生时，中间信号线易炸断，造成整个面板失效的问题。并且，在第1级GOA电路的上边区域和第N级GOA电路的下边区域的VGH信号线和VGL信号线之间也设置了静电防护单元，进一步使得电压源信号线即VGH信号线和VGL信号线之间的静电防护能力也得到提升。
请参阅图5，图5是本发明一种显示面板一实施例的结构示意图。显示面板300包括阵列基板31、背光模组32、液晶层33以及彩色滤光片34。
阵列基板31其包括GOA区域，GOA区域中的第1级GOA电路和第N级GOA电路之间的中间区域设置有第一静电防护电路，能够泄放GOA信号线在中间区域的异常电荷，其类似于上述实施例阵列基板100，具体不再赘述。
显示面板300中的背光模块32位于最底层，其他的阵列基板31、液晶层33、彩色滤光片34依次向上叠置。
请参考图6，图6是本发明一种显示装置一实施例的结构示意图。显示装置400可以是手机、平板电脑、电视、电脑等设置有LCD或OLED的装置。该显示装置400包括显示面板41以及支持及保护显示面板41的框架42。
显示面板41类似于实施例显示面板300，具体不在赘述。
区别于现有技术，本发明中的阵列基板上设置有GOA区域，以及设置在GOA区域外侧的GND走线；该GOA区域中设置有多种GOA信号线和N级GOA电路，N级GOA电路通过多种GOA信号线电连接，第1级GOA电路和第N级GOA电路之间的中间区域设置有第一静电防护电路，该第一静电防护电路用于泄放GOA信号线在中间区域的异常电荷，避免了当信号走线中间区域有较大的静电产生时，中间信号线易炸断，造成整个面板失效的问题，使得整个GOA信号线之间具备较强的静电防护能力。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种阵列基板，其特征在于，所述阵列基板上设置有GND走线以及GOA区域，所述GND走线设置在所述GOA区域的外侧；所述GOA区域中设置有多种GOA信号线和N级GOA电路，所述N级GOA电路通过所述多种GOA信号线电连接，且第1级GOA电路与第N级GOA电路之间的中间区域设置有第一静电防护电路，用于泄放所述GOA信号线在所述中间区域的异常电荷。
2.根据权利要求1所述的阵列基板，其特征在于，所述第一静电防护电路包括设置在所述多种GOA信号线和所述GND走线之间的多个静电防护单元。
3.根据权利要求2所述的阵列基板，其特征在于，所述多种GOA信号线和所述GND走线之间的所述多个静电防护单元在所述中间区域对称设置。
4.根据权利要求1所述的阵列基板，其特征在于，所述第一静电防护电路包括设置在所述多种GOA信号线之间多个静电防护单元。
5.根据权利要求4所述的阵列基板，其特征在于，所述多种GOA信号线之间的所述多个静电防护单元在所述中间区域对称设置。
6.根据权利要求4所述的阵列基板，其特征在于，所述多种GOA信号线包括STV信号线、U2D信号线、CK信号线、VGH信号线以及VGL信号线，所述多个静电防护单元设置在所述STV信号线和所述U2D信号线之间、所述U2D信号线和所述CK信号线之间、所述CK信号线和所述VGH信号线之间或所述VGH信号线和所述VGL信号线之间。
7.根据权利要求1所述的阵列基板，其特征在于，所述第一级GOA电路的上边区域和所述第N级GOA电路的下边区域设置有第二静电防护电路，所述多种GOA信号线包括VGH信号线和VGL信号线；所述第二静电防护电路包括设置在所述上边区域的所述VGH信号线和所述VGL信号线之间的静电防护单元，以及所述下边区域的所述VGH信号线和所述VGL信号线之间的静电防护单元。
8.根据权利要求2-7中任一项所述的阵列基板，其特征在于，所述静电防护单元包括并联的第一二极管和第二二极管，其中所述第一二极管的正极电连接所述第二二极管的负极，所述第一二极管的负极电连接所述第二二极管的正极。
9.一种显示面板，其特征在于，所述显示面板包括权利要求1-8中任一项所述的阵列基板。
10.一种显示装置，其特征在于，所述显示装置包括权利要求9所述的显示面板。
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